CN1719673A - A Vertical External-Cavity Surface-Emitting Semiconductor Laser with Convex-Concave Mirrors - Google Patents

Abstract

The present invention relates to the structural design of a vertical external cavity surface-emitting semiconductor laser, including: a pumping light source 1, a convex-concave mirror 2, a reflective dielectric film 3, an anti-reflection film 4, a window layer 5, an optical absorption layer 6, and an active gain region 7 , Bragg reflector 8, solder 9, heat sink 10, heat sink 11, thermal conductive glue 12, microchannel heat sink 13, nonlinear crystal 14. Through the converging effect of the convex surface of the outer convex-concave mirror, the light scattering is reduced, the light feedback is increased, and then the lasing threshold of the device is reduced, so as to achieve the purpose of improving the output efficiency and output power of the device. At the same time, the micro-channel heat dissipation technology is used to solve the heat dissipation problem of the device to increase the output power. The present invention adopts the concave-convex reflector as the external cavity mirror, so that the output light is approximately parallel light, and the light-emitting area is uniformly circular, thereby obtaining circularly symmetrical beam quality and facilitating beam coupling. The invention can be applied to the III-V group semiconductor material system, and can also be applied to the II-VI group semiconductor material system.

Description

A kind of emission semiconductor laser of vertical external chamber surface with convexo-concave mirror

Technical field:

The invention belongs to field of semiconductor lasers, relate to the structural design of emission semiconductor laser of vertical external chamber surface.

Background technology:

Vertical-cavity-face emitting semiconductor laser is one of most active research topic of current optoelectronic areas, compare with edge-emission semiconductor laser, vertical cavity surface emitting laser spare has less far-field divergence angle, circular light spot, be easy to single longitudinal mode swashs and penetrates, and be easy to advantages such as two-dimentional light is integrated, therefore have a wide range of applications at aspects such as optical communication, light interconnection and light are integrated, caused people's very big interest.Emission semiconductor laser of vertical external chamber surface then is the emerging representative of vertical-cavity-face emitting semiconductor laser, is with a wide range of applications in fields such as laser display, laser communication, materials processing, medical treatment and defence engineerings with its Output optical power height, good beam quality and the characteristics that are easy to two-dimensional array.Particularly it is easy to the intracavity frequency doubling aspect, in fields such as laser pumping, nonlinear crystal frequencys multiplication very large research and development prospect is arranged.The vertical external cavity emitting laser structure mainly comprises: exocoel speculum, periodically Multiple Quantum Well active gain district, semiconductor-distribution Bragg reflector, diamond heat sink and heat sink etc.Device can inject under excitation and the optical pumping excitation dual mode at electric current works.Exocoel mirror structure in the existing emission semiconductor laser of vertical external chamber surface structure is a plano-concave lens, and, realize the anti-reflection deielectric-coating of the wavelength after the frequency multiplication when perhaps evaporation is realized high the reflection to operation wavelength at the deielectric-coating of concave side evaporation to the high reflection of operation wavelength realization.The advantage of this exocoel speculum is that processing is easy, cheap.But, the light of advancing there is scattering process in formed optical resonator, so, certainly will increases the lasing threshold of device, reduce the efficient and the power output of device owing to adopted this plano-concave speculum.Therefore need a kind of better exocoel speculum, as the exocoel speculum in the high-power vertical external cavity face emitting semiconductor laser.Meanwhile, the heat radiation of high-power semiconductor laser is the key that influences device performance always, and the same problem of heat radiation that exists needs well to solve in emission semiconductor laser of vertical external chamber surface.

Summary of the invention:

Emission semiconductor laser of vertical external chamber surface structure China and foreign countries cavity reflection mirror adopts plano-concave lens in the background technology, this exocoel speculum has scattering process to the light of advancing, certainly will increase the lasing threshold of device, reduce the efficient and the power output of device, meanwhile, the heat radiation of high-power semiconductor laser is the key that influences device performance always.In order to solve the above problems, the objective of the invention is to reduce the lasing threshold of device, meanwhile improve the heat radiation of device, further improve Output optical power and the stability of device work and the life-span of device of device, the present invention will provide a kind of device architecture of the emission semiconductor laser of vertical external chamber surface with convexo-concave mirror for this reason.

To achieve these goals, a kind of emission semiconductor laser of vertical external chamber surface with convexo-concave mirror of the present invention comprises: pump light source, convexo-concave mirror, the reflecting medium film, anti-reflection film, Window layer, light absorbing zone, the active gain district, Bragg mirror, scolder, fin, heat sink, heat-conducting glue, the microchannel fin, fixedly connected with Bragg mirror with light absorbing zone respectively in the two sides in active gain district, scolder is fixedlyed connected Bragg mirror with fin, scolder is fixedlyed connected fin with heat sink, the concave surface of convexo-concave mirror is fixedlyed connected with high reflecting medium film, the convex surface of convexo-concave mirror is connected with outside output, fixedly connected with light absorbing zone with anti-reflection film respectively in the two sides of Window layer, heat-conducting glue is fixedlyed connected with the microchannel fin with heat sink respectively.Between reflecting medium film and anti-reflection film, be placed with nonlinear crystal.

When the present invention worked: device was worked in optical pumping mode (semiconductor laser or other LASER Light Source).Pump light is absorbed the generation photo-generated carrier through Window layer at absorbed layer and enters the active gain district, electronics and hole are carried out compound, produce stimulated emission, and the resonant cavity modeling vibration through constituting by outer convex-concave speculum and Bragg mirror, laser is from the outgoing of outer convex-concave speculum.

The present invention adopts the structure of the emission semiconductor laser of vertical external chamber surface of band convexo-concave mirror, convex surface converging action by outer convex-concave speculum reduces light scattering, increase the light feedback, and then reduce the lasing threshold of device, reach the purpose that improves device delivery efficiency and power output.And be coated with the deielectric-coating of operation wavelength being realized high reflection at the concave surface of convexo-concave mirror, and adopt the reflecting medium film to realize the wavelength after the frequency multiplication is strengthened transmitance, meanwhile adopt the microchannel heat dissipation technology to solve the device heat dissipation problem and wait and improve power output.Aspect the beam quality that improves vertical external cavity face emitting semiconductor laser, because it is external cavity mirror that the present invention adopts convexo-concave mirror, make output light be approximately directional light, the luminous zone that makes laser of the present invention is for circular uniformly, thereby obtain the cylindrical symmetric beam quality, be beneficial to light beam coupling.The anti-reflection film that the present invention adopts can obtain the transmitance more than 99.99%, for example: HfO ₂Anti-reflection film stable performance and can be used for rigorous environment.Window layer of the present invention and anti-reflection membrane-bound structure adhesiveness is good, membrane structure is fine and close, even, free of pinholes, at effectively clear aperature theca interna flawless, scratch, idea, photographic fog and color spot, have advantages such as moisture-proof, good stability, the ability that has good resisting laser damage simultaneously, good performance such as the scattering loss that the anti-reflection film microstructure causes is low.A kind of emission semiconductor laser of vertical external chamber surface with convexo-concave mirror of the present invention can be applied to III-V family semiconductor material system, can also be applied to II-VI family semiconductor material system.

Description of drawings

Fig. 1 is a laser structure front view of the present invention.

Fig. 2 is the 980nm emission semiconductor laser of vertical external chamber surface intracavity frequency doubling front view of the embodiment of the invention 3 band convexo-concave mirrors.

Embodiment: the present invention is further described below in conjunction with drawings and Examples, but the invention is not restricted to these embodiment.Comprise among the embodiment: pump light source 1, convexo-concave mirror 2, high reflecting medium film 3, anti-reflection film 4, Window layer 5, light absorbing zone 6, active gain district 7, semiconductor-distribution Bragg reflector 8, scolder 9, fin 10, heat sink 11, heat-conducting glue 12, microchannel fin 13, nonlinear crystal 14.The concave curvature of convexo-concave mirror 2 half is through can be from 5 millimeters to 100 millimeters, and the convex curvature radius can be from 5 millimeters to 50 millimeters,

Embodiment 1:

Pump light source 1 is a high power 800-810nm wavelength semiconductor laser array, convexo-concave mirror 2 is by k9 optical glass or quartzy making, concave curvature half is through being 5 millimeters or 25 millimeters, the convex curvature radius is 5 millimeters or 9.5 millimeters, high reflecting medium film 3 adopts the Si/SiO2 deielectric-coating, and reflectivity is at 95%-99%.Anti-reflection film 4 adopts the HfO2 material to make, and the effective refractive index that anti-reflection film is selected is $n_{\mathrm{eff}}=\sqrt{n_0{n}_1},$ Wherein the effective refractive index of HfO2 material selection is 1.85-1.90.Window layer 5 adopts the GaIn0.49P material.Light absorbing zone 6 adopts the Al0.06GaAs material.Periodically active Multiple Quantum Well gain region can be selected by active gain district 7, and its diameter can be from 50 microns to 5000 microns; Active gain district 7 can adopt GaIn0.16As quantum well and GaAs0.94P potential barrier.Bragg mirror 8 can adopt 30 pairs of Al0.12GaAs/Al0.9GaAs materials.Scolder 9 adopts indium, indium stannum alloy or gold-tin alloy.Fin 10 adopts diamond or aluminium nitride or beryllium oxide material.Heat sink 11 and microchannel fin 13 can adopt fine copper or oxygen-free copper or red copper, heat-conducting glue 12 adopts the thermal conductive silicon materials.

The present invention adopts substrate removal process that the substrate of the semiconductor chip of active quantum well of carrying and distribution Bragg reflector is removed, the method that adopts chemical corrosion and epitaxial loayer to set up etch stop layer at process aspect.Device adopts the micromechanics mounting technology that convexo-concave mirror and semiconductor chip, heat sink and microchannel heat sink etc. are assembled in assembling process.

Embodiment 2: pump light source 1, reflecting medium film 3, anti-reflection film 4 and Window layer 5, scolder 9, fin 10, heat sink 11, heat-conducting glue 12 and microchannel fin 13 are identical with embodiment 1, the concave curvature of convexo-concave mirror 2 half is through being 50 millimeters, and the convex curvature radius is 25 millimeters.Light absorbing zone 6 is Al0.2GaAs, and periodically Multiple Quantum Well active gain district 7 is GaAs quantum well and Al0.2GaAs potential barrier, and Bragg mirror 8 adopts 30 pairs of AlAs/Al0.2GaAs materials.The present invention is identical with embodiment 1 at process aspect.

Embodiment 3: the 980nm emission semiconductor laser of vertical external chamber surface intracavity frequency doubling of band convexo-concave mirror, and nonlinear crystal 14 is a lbo crystal, and the concave curvature of convexo-concave mirror 2 half is through selecting 100 millimeters, and the convex curvature radius can be selected 50 millimeters.Other assembly is with identical with embodiment 1.

Claims (2)

1. A vertical external-cavity surface-emitting semiconductor laser with a convex-concave mirror, comprising: a pump light source (1), a window layer (5), a light-absorbing layer (6), an active gain region (7), and a Bragg reflector (8), solder (9), heat sink (10), heat sink (11), thermally conductive glue (12), the two sides of the active gain area (7) are connected with the light absorbing layer (6) and the Bragg reflector (8) respectively ), the bragg reflector (8) is fixedly connected to the heat sink (10) by the solder (9), and the heat sink (10) and the heat sink (11) are fixedly connected by the solder (9), which is characterized in that it also includes: Reflector (2), reflective medium film (3), anti-reflection film (4), microchannel heat sink (13), concave surface of convex-concave reflector (2) is fixedly connected with reflective medium film (3), window layer (5 ) are fixedly connected to the antireflection film (4) and the light absorbing layer (6) respectively, and the thermally conductive adhesive (12) is fixedly connected to the heat sink (11) and the microchannel heat sink (13) respectively. 2. A vertical external-cavity surface-emitting semiconductor laser with convex-convex mirrors according to claim 1, characterized in that it also includes a nonlinear crystal (14), between the reflective medium film (3) and the anti-reflection film (4) A nonlinear crystal (14) is placed between them.

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