CN1685610B - 压电振子、使用其的滤波器和压电振子的调整方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 32
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 230000010287 polarization Effects 0.000 claims 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 230000007774 longterm Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 64
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 17
- 229910017083 AlN Inorganic materials 0.000 description 16
- 230000010355 oscillation Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 230000005284 excitation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
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Abstract
本发明的压电振子的特征在于,是将氧化硅膜(3)作为电介质膜而设置的层叠结构。通过采取上述结构,减小了由于在压电板(1)的两主面上存在电介质膜的缘故而起因于长期的应力缓和的差的对压电板(1)或电介质膜起作用的内部应力的差,可尽可能减小翘曲。具有可减小因压电振子发生翘曲引起的压电振子的共振频率的变化的效果。
Description
技术领域
本发明涉及压电振子、使用了该压电振子的滤波器和压电振子的调整方法。
背景技术
作为使用了在固体中传播的波、即体波的压电振动元件,有作为各种电子机器等的时钟源使用的压电振子及在通信装置的频率抽出等中使用的压电滤波器。使用这些压电振动元件的频率区域近年来趋于高频化。作为主振动,大多利用了厚度滑移振动或厚度纵振动等的厚度振动,此外,因为该主振动的共振频率与压电板的厚度成反比例,故通过用薄膜材料等形成压电板,试验了在高频下的利用。在Marc-Alexandre Dubois和PaulMurant著的“氮化铝薄膜应用于压电传感器和微波滤波器的性质”,AppliedPhysics Letters,1999年5月17日,pp,3032~3034中公开了现有的压电振动元件。如图9中所示,现有的压电振动元件901使用氮化铝薄膜91作为压电板,成为在其表面背面上形成了激励用电极92、在一个主面一侧形成了由氮化硅膜93与氧化硅膜94的层叠膜构成的电介质膜的结构。此外,作成了在硅基板95上形成了压电振子整体的结构,以便容易处理操作非常薄的压电振子。
在上述现有例中示出的结构中,考虑了压电体薄膜与电介质薄膜的弹性系数和尺寸形状,以使在成膜后的初期中压电振子的共振频率的温度系数大致为零。但是,由于在现有例中虽然考虑了各薄膜的应力缓和但没有进行对于长期可靠性的考虑,故随着时间的流逝,压电体薄膜与电介质膜的应力缓和的差成为原因,作为压电振子整体的尺寸形状的变化(翘曲)与初期形状相比变大了。存在该翘曲导致共振频率的变化那样的课题。
发明内容
本发明是鉴于上述课题而进行的,其目的在于提供不发生因翘曲导致的共振频率的变化的压电振子、使用了该压电振子的滤波器和压电振子的调整方法。
为了解决该课题,本发明在压电板的极化方向朝向厚度方向的压电振子中,构成为在上述压电板的两主面上设置电极,进而在上述压电板的两主面上在夹住上述压电板呈大致点对称的位置上层叠大致呈相似形且厚度大致相同的电介质膜,上述压电板以厚度纵振动为主振动。利用该结构,由于在压电板的两主面上存在电介质膜,因此起因于长期的应力缓和的差的对压电板或电介质膜起作用的内部应力的差变小,可减小翘曲。于是,可减小因压电振子发生翘曲引起的压电振子的共振频率的变化。
附图说明
图1是示出本发明的压电振子的一实施方式的剖面图。
图2是示出电介质膜与压电板的厚度比与电机械耦合系数的关系的图。
图3是示出本发明的压电振子的另一实施方式的剖面图。
图4是示出使用了压电振子的梯型滤波器的电等效电路的图。
图5是示出本发明的梯型滤波器的实施方式的立体图。
图6是一般的2重模式压电滤波器的剖面图。
图7是一般的2重模式压电滤波器的剖面图。
图8是示出本发明的2重模式压电滤波器的一实施方式的剖面图。
图9是示出现有的压电振子的剖面图。
具体实施方式
使用图1~图8说明本发明的实施方式。
(实施方式1)
图1是说明使用氮化铝作为压电材料、极化方向朝向压电板厚度方向的、以厚度纵振动基本波为主振动的压电振子101的剖面图。压电振子101由用氮化铝构成的压电板1、相对于压电板1的两主面地设置的激励用电极2和作为电介质膜在压电板1的两主面上形成的氧化硅膜3构成。
用氮化铝构成的压电板1的厚度为1μm。此外,由于氧化硅膜3的厚度在上下都为0.4μm,而且,在压电板1的两主面上以成为大致相同的面积的方式来形成,故可减小起因于长期的应力缓和的差的对压电板1或氧化硅膜起作用的内部应力的差,可尽可能减小翘曲。即,可减小因压电振子发生翘曲引起的压电振子101的共振频率的变化。
此外,由于作为氧化硅膜3的材料使用的氧化硅具有负的频率温度系数,另一方面,作为压电板1的材料的氮化铝具有正的频率温度系数,故通过形成层叠了这些材料的结构,可大致抵消频率温度系数,可使频率温度系数变得良好。此外,使用氧化硅膜与氮化硅膜的层叠膜作为氧化硅膜3的材料以代替氧化硅膜,可得到同样的效果。
在本实施方式1中,使用了基本波作为主振动,如果与使用了2倍波的情况相比,则可使共振频率对于压电板1或氧化硅膜(电介质膜)3的厚度离散性的变化量大体为二分之一。于是,可高精度地使共振频率或电机械耦合系数与目标值相一致。
压电振子101的共振频率主要由压电板1的厚度或激励用电极2的厚度、然后是氧化硅膜3的厚度来决定。再者,已知作为电特性的重要的项目之一的电机械耦合系数也随这些厚度而变化。因此,对于使用氮化铝作为压电材料、压电板1的极化方向朝向厚度方向、作成了在压电板1的两主面上将相同的厚度的氧化硅膜3作为电介质膜设置的层叠结构的压电振子101来说,在图2的曲线图中示出使压电板1的一个主面一侧的氧化硅膜3的厚度与另一个主面一侧的氧化硅膜3的厚度的和ts与压电板1的厚度tp之比ts/tp变化了的情况的电机械耦合系数的变化。在图2中示出了厚度纵振动基本波和2倍波的情况的各自的电机械耦合系数。
从图2的模拟结果可知,在基本波或2倍波的任一种情况下,只要ts/tp处于0.7以上至2.0以下的范围内,电机械耦合系数的值就处于上述范围内的最小值的25%以内的变化量内。即,基本波的耦合系数在上述的范围内稳定于9.5~11.5%,二倍波的耦合系数在上述的范围内也稳定于12.0~14.0%。电机械耦合系数以这种方式稳定了的特点,成为在将压电振子用于电压控制振荡器(VCO)的情况或将多个压电振子组合起来构成压电滤波器的情况等中可得到稳定的特性的优点。如果ts/tp比2.0大,则由于对于厚度纵振动的质量负载太大,减小了也成为振动的容易程度的指标的机械品质系数,故是不实用的。
在使压电振子的共振频率与目标值相一致的频率调整工序中,在氮化铝的单方的主面一侧形成的氧化硅膜上或是再附加氧化硅膜、或是除去已形成的氧化硅膜来形成规定的厚度的氧化硅膜3。在本实施方式1的情况下,因为在压电板1的主面的表面一侧的氧化硅膜3的厚度与背面一侧的氧化硅膜3的厚度的和ts是0.8μm,由氮化铝构成的压电板1的厚度tp是1μm,故ts与tp的比ts/tp为0.8。因而,由于处于电机械耦合系数的变化小的ts/tp的范围(0.7以上至2.0以下),故在调整共振频率时,电机械耦合系数几乎不变化。即,根据本发明的实施方式1,可实现电机械耦合系数几乎不变化的频率调整工序。
在本实施方式1中,使用氮化铝作为压电材料进行了说明,但即使使用PZT或ZnO等的其它的压电材料,也可得到同样的效果。此外,说明了在构成压电振子101的一个主面一侧的氧化硅膜3的氧化硅膜上通过附加形成氧化硅膜来调整共振频率的方法,但也可对于在压电振子的另一个主面一侧或主面的两侧的氧化硅膜通过附加或除去氧化硅膜来调整共振频率。
(实施方式2)
图3是说明使用氮化铝作为压电材料、极化方向朝向压电板厚度方向的、以厚度纵振动二倍波为主振动的压电振子301的剖面图。压电振子301由用氮化铝构成的压电板1、在压电板1的两主面上相对地设置的激励用电极2、在压电板1的主面的背面一侧形成的作为第一电介质膜的氧化硅膜3和在压电板1的主面的表面一侧形成的作为第二电介质膜的氮化硅膜4构成,由硅构成的支撑基板5支撑压电振子301。
用氮化铝构成的压电板1的厚度为10μm。由于氧化硅膜3的厚度定为4μm,氮化硅膜4的厚度定为5μm,故是在压电板1的主面两侧存在大致相同的厚度的电介质膜的结构。此外,构成了下述结构:氧化硅膜3的面积与氮化硅膜4的面积大致为等同,即,处于0.8~1.2倍的范围内。因此,可减小起因于长期的应力缓和的差的对压电板1或电介质膜起作用的内部应力的差,可尽可能减小翘曲。即,可减小因压电振子301发生翘曲引起的压电振子的共振频率的变化。
此外,对于在本实施方式2中示出的压电振子来说,在由硅构成的支撑基板5上注入氮,在设置了氮化硅膜4的基础上,作成了使用氮化铝的压电振子301,之后为了将压电振子301的振动部作成中空结构,也可附加从背面起用化学蚀刻等除去支撑基板5的工序。此时,由于能使氮化硅膜4具有起到中止支撑基板5的刻蚀的作用,故可使压电振子301的作成工序变得简便。
此外,在本实施方式中,通过在主振动中使用二倍波,与使用基本波的情况相比,可得到大致2倍的高的共振频率。
如以上已说明的那样,在打算得到高的共振频率的情况下可使用二倍波,在共振频率的调整的容易程度为优先的情况下,可选择使用基本波。
(实施方式3)
已知通过组合多个压电振子可作成只能使特定的频带的信号通过的带通滤波器。一般来说,大多使用梯型滤波器,在该梯型滤波器中,将振子的共振频率或反共振频率作为滤波器特性的极,将共振频率与反共振频率之间作为通过区域来使用。在图4中示出使用2个压电振子11构成梯型滤波器的情况的电等效电路。
图5示出使用2个使用氮化铝作为压电材料、极化方向朝向压电板厚度方向的、以厚度纵振动基本波为主振动的压电振子11、如图4的等效电路那样连接而得到的梯型滤波器501。梯型滤波器501由压电振子11、输入用外部端子12、输出用外部端子13、接地用外部端子14和金属细线15构成。在梯型滤波器501中使用的2个压电振子11都是在压电板的两主面上设置了相同的厚度的电介质膜的层叠结构,由于呈现压电振子的共振频率或电机械耦合系数为稳定的特性,故可得到带宽稳定的滤波器特性。
(实施方式4)
作为梯型滤波器以外的滤波器,有在一片压电板上配置多个压电振子并通过使这些振动耦合来制作带通滤波器的多重模式滤波器。将这样的滤波器称为MCF(单片晶体滤波器),是积极地利用了被称为a_0模式或s_1模式等的不协调的谐波的振动的滤波器。在此,说明使用了s_0模式和a_0模式的2重模式滤波器。
在图6中示出通常的2重模式滤波器601的结构的一例。由于在压电板1的一个主面一侧隔开微小的间隔设置输入用电极21和输出用电极22,在压电板1的另一个主面一侧设置接地用电极23,故生成作为对称模式的s_0模式和作为斜对称模式的a_0模式,实现了带通滤波器。图6的接地用电极23是一例,而也可如图7中所示,分别设置与输入用电极21对置的接地用电极231和与输出用电极22对置的接地用电极232。
在图8中示出使用氮化铝作为压电材料、以厚度纵振动基本波为主振动的本发明的2重模式压电滤波器801。压电滤波器801由用氮化铝构成的压电板1、输入用电极21、输出用电极22、接地用电极23、在压电板1的主面的背面一侧形成的氮化硅膜24和在压电板1的主面的表面一侧形成的氧化硅膜25构成,由硅构成的支撑基板26支撑压电滤波器801。压电滤波器801的结构是在压电板1的两主面上设置了大致相同的厚度且大致同等的面积的电介质膜(氮化硅膜24和氧化硅膜25)的层叠结构,由于呈现二个振动模式的共振频率为稳定的特性,故可得到带宽稳定的滤波器特性。
产业上利用的可能性
如上所述,按照本发明,在压电板的极化方向朝向厚度方向的压电振子中,由于构成为在上述压电板的两主面上设置激励用电极,进而在上述压电板的两主面上在夹住上述压电板呈大致点对称的位置上层叠大致呈相似形且厚度大致相同的电介质膜,上述压电板以厚度纵振动为主振动,故减小了起因于长期的应力缓和的差的对压电板或电介质膜起作用的内部应力的差,可尽可能减小翘曲。于是,可得到能减小因压电振子发生翘曲引起的压电振子的共振频率的变化那样的有利的效果。
Claims (12)
1.一种压电振子,其特征在于,
由下述部分构成:
具有第一面和第二面、极化方向是厚度方向的压电板;
覆盖上述第一面的第一电极;
覆盖上述第二面的第二电极;
覆盖上述第一电极的第一电介质膜;以及
覆盖上述第二电极的第二电介质膜,
上述压电板以厚度纵振动为主振动,
上述第一电介质膜和上述第二电介质膜具有相同的厚度,且上述第一电介质膜和上述第二电介质膜的面积比在0.8~1.2的范围内,
上述第一电介质膜的厚度与上述第二电介质膜的厚度的和相对于上述压电板的厚度之比的范围为上述压电振子的电机械耦合系数的变化小的0.7以上2.0以下。
2.如权利要求1中所述的压电振子,其特征在于,
上述压电板由氮化铝构成。
3.如权利要求1中所述的压电振子,其特征在于,
上述第一电介质膜或上述第二电介质膜由氧化硅构成。
4.如权利要求1中所述的压电振子,其特征在于,
上述第一电介质膜或上述第二电介质膜由氮化硅构成。
5.如权利要求1中所述的压电振子,其特征在于,
第一或第二电介质膜中的至少一方由氧化硅和氮化硅的层叠膜构成。
6.如权利要求1中所述的压电振子,其特征在于,
上述主振动是厚度纵振动的基本波。
7.如权利要求1中所述的压电振子,其特征在于,
压电板的主振动是厚度纵振动的2倍波。
8.一种压电滤波器,其特征在于,具有压电振子,所述压电振子由下述部分构成:
具有第一面和第二面、极化方向是厚度方向的压电板;
覆盖上述第一面的第一电极;
覆盖上述第二面的第二电极;
覆盖上述第一电极的第一电介质膜;以及
覆盖上述第二电极的第二电介质膜,
上述压电板以厚度纵振动为主振动,
上述第一电介质膜和上述第二电介质膜具有相同的厚度,且上述第一电介质膜和上述第二电介质膜的面积比在0.8~1.2的范围内,
上述第一电介质膜的厚度与上述第二电介质膜的厚度的和相对于上述压电板的厚度之比的范围为上述压电振子的电机械耦合系数的变化小的0.7以上2.0以下。
9.如权利要求8中所述的压电滤波器,其特征在于,
是至少组合了2个上述压电振子的梯型滤波器。
10.如权利要求8中所述的压电滤波器,其特征在于,
是在一片所述压电板上构成了多个上述压电振子的2重模式滤波器。
11.如权利要求10中所述的压电滤波器,其特征在于,
在上述2重模式滤波器中,上述第一电极被分割为输入用电极和输出用电极,上述第二电极设为接地用电极。
12.一种压电振子的调整方法,其特征在于,
上述压电振子由下述部分构成:
具有第一面和第二面、极化方向是厚度方向的压电板;
覆盖上述第一面的第一电极;
覆盖上述第二面的第二电极;
覆盖上述电极的第一电介质膜;以及
覆盖上述第二电极的第二电介质,
上述压电板以厚度纵振动为主振动,
上述第一电介质膜和上述第二电介质膜具有相同的厚度,且上述第一电介质膜和上述第二电介质膜的面积比在0.8~1.2的范围内,
上述第一电介质膜的厚度与上述第二电介质膜的厚度的和相对于上述压电板的厚度之比的范围为上述压电振子的电机械耦合系数的变化小的0.7以上2.0以下,
上述压电振子的调整方法通过使上述第一电介质膜和上述第二电介质膜中的至少一方的厚度变化来调整上述压电振子的共振频率。
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- 2003-10-24 US US10/500,393 patent/US7414349B2/en not_active Expired - Fee Related
- 2003-10-24 CN CN2003801001497A patent/CN1685610B/zh not_active Expired - Fee Related
- 2003-10-24 WO PCT/JP2003/013633 patent/WO2004038914A1/ja active Application Filing
- 2003-10-24 DE DE60333774T patent/DE60333774D1/de not_active Expired - Lifetime
- 2003-10-24 KR KR1020047011859A patent/KR100669088B1/ko not_active IP Right Cessation
- 2003-10-24 EP EP03758882A patent/EP1557945B1/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000209063A (ja) * | 1998-11-12 | 2000-07-28 | Mitsubishi Electric Corp | 薄膜圧電素子 |
JP3088407B2 (ja) * | 1999-02-02 | 2000-09-18 | 日本電気アイシーマイコンシステム株式会社 | インサーキットエミュレータおよびインサーキットエミュレーション方法 |
EP1170862A2 (en) * | 2000-06-23 | 2002-01-09 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator and piezoelectric filter using the same |
Non-Patent Citations (2)
Title |
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EP 1170862 A2,说明书第14栏第45-48,说明书第15栏第3-5,说明书第70段,附图20,25. |
同上. |
Also Published As
Publication number | Publication date |
---|---|
DE60333774D1 (de) | 2010-09-23 |
EP1557945B1 (en) | 2010-08-11 |
WO2004038914A1 (ja) | 2004-05-06 |
US20050012569A1 (en) | 2005-01-20 |
EP1557945A4 (en) | 2005-07-27 |
EP1557945A1 (en) | 2005-07-27 |
JP2004147246A (ja) | 2004-05-20 |
US7414349B2 (en) | 2008-08-19 |
KR20040101214A (ko) | 2004-12-02 |
KR100669088B1 (ko) | 2007-01-15 |
CN1685610A (zh) | 2005-10-19 |
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