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CN1647268A - 载体、制造载体和电子器件的方法 - Google Patents

载体、制造载体和电子器件的方法 Download PDF

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Publication number
CN1647268A
CN1647268A CNA038080575A CN03808057A CN1647268A CN 1647268 A CN1647268 A CN 1647268A CN A038080575 A CNA038080575 A CN A038080575A CN 03808057 A CN03808057 A CN 03808057A CN 1647268 A CN1647268 A CN 1647268A
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China
Prior art keywords
carrier
layer
metal layer
intermediate layer
metal
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Granted
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CNA038080575A
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CN1315185C (zh
Inventor
P·A·J·格罗恩休斯
P·迪克斯特拉
C·G·施里克斯
P·W·M·范德瓦特
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III Holdings 6 LLC
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Koninklijke Philips Electronics NV
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Publication of CN1647268A publication Critical patent/CN1647268A/zh
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    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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Abstract

载体(30)包括第一蚀刻掩模(14)、第一金属层(11)、中间层(12)、第二金属层(13)和第二蚀刻掩模(17)。第一和第二蚀刻掩模(14、17)都可以通过电化学镀附来在一个步骤中设置。在第一金属层(11)和中间层(12)已经通过第一蚀刻掩模(14)构图以后，电元件(20)可以使用导电装置合适地接附到载体(30)。在构图操作中，进一步蚀刻中间层(12)，以便在第一金属层(11)下产生蚀刻不足。在设置封装(40)以后，通过第二蚀刻掩模(17)来构图第二金属层(13)。这样，在组装过程期间不需要光刻步骤的情况下获得了可焊接的器件(10)。

Description

载体、制造载体和电子器件的方法
本发明涉及一种制造设置有电元件和包括第一构图的金属层、构图的中间层和第二金属层的堆叠的具有第一侧和第二侧的载体的电子器件的方法，
该方法包括的步骤为：
将电元件设置在载体的第一侧上，电元件的触点导电地连接到第一金属层；以及
提供围绕电元件的封装。
本发明还涉及具有第一和第二侧的载体，其包括第一金属层、中间层和第二金属层的堆叠。
本分明还涉及制造具有第一侧和相对的第二侧的载体的方法，其包括的步骤为：
提供第一金属层、中间层和第二金属层的堆叠，其中，第一和第二金属层导电地相互连接，其中，第一金属层位于第一侧上；以及
根据需要的图案构图该第一金属层。
这样的载体和这样的制造包括载体的电子器件的方法从EP-A1.160.858已知。该已知的载体是Al、Cu、Fe-Ni合金的载体，或者Cu-Al或者Al-Cu-Al的堆叠的载体。该载体设置在具有需要的图案和金属Ni、Au、Ag和Pd中的至少一种的导电层的第一侧上。在该器件的制造过程中，在设置半导体元件和设置封装以后，其中没有设置图案的载体的部分被去除。随后，掩模光刻地设置在载体的第二侧上，在这之后，形成接触面或者引导管脚。
已知方法的缺点在于，在电元件组装以后需要光刻步骤。这意味着，该步骤必须在组装设备中进行，由于这样的设备中通常流行的条件，所以这是不希望的。
因此，本发明的第一个目的是提供一种制造在开始段落中提到的类型的电子器件的方法，其中，在设置电元件以后，不需要光刻步骤，该方法仍然产生一种紧凑和足够坚固的器件。
该第一目的实现为，该载体包括在第二侧上的蚀刻掩模，以及所述载体的第一金属层导电地连接到第二金属层，且具有相对于中间层突出的部分。在设置最好整个地封装电元件的封装以后，根据由蚀刻掩模限定的图案来从载体的第二侧蚀刻该第二金属层。
在根据本发明的方法中，载体的第二金属层没有完全地被去除，而是用于在其中限定接触面和任何其他图案。有利地，该图案通过蚀刻掩模来固定，该蚀刻掩模在组装过程之前被设置。
第二层没有被去除的事实意味着，载体接附到封装。为了确保载体合适地接附到封装，载体的第一金属层机械地锚定在封装中。为此，第一金属层和中间层构图为使得第一金属层具有相对于该中间层突出的部分。这样，这些部分在平行于载体的侧面的方向上突出。中间层最好通过蚀刻来构图，蚀刻剂使用相对于第一金属层是选择性的。这导致第一金属层一定程度的未蚀刻，发现这对于机械锚定是足够的。
载体的形成在于，每个构成层的厚度可以保持小。毕竟，机械稳定性不是由第一金属层确定，而是由载体整个确定。由于图案的分辨率也由层厚度确定，所以本发明使得可以获得具有带有很高的分辨率的第一金属层的载体。该效果使得可以进一步小型化，以及特殊确定轨道，如对于细小间距和高频应用所需要的。
该方法的优点在于，其使得可以制造多种电子器件。尤其是，该方法适用于半导体器件，而且具有传感器、微型机电系统(MEMS)元件或者显示器件的其他器件也可以通过所述方法来制造。
第一组器件是紧凑的半导体器件，其包括几个到近似四十个接触面。这是这样的情况，尤其是因为在第一金属层中可以限定高分辨率的图案，而第二金属层可以包括接触面，这些接触面足够分开，以能够使用标准的设备将焊料应用到它们上。
第二组器件包括半导体器件，其包括多于一个的电元件，这些电元件必须相互连接。由于第一和第二金属层独立地构图，所以从第一到第二元件的相互连接的轨道可以在第一金属层中限定。这些相互连接的轨道在第二金属层中的图案中没有。这样，在将焊料提供到载体的第二侧上期间，没有在这样的相互连接的轨道和电路板之间的不需要的接触的危险。
这样的应用的尤其有利的例子在这样的器件中找到，即，首先包括集成电路，此外，包括一个或者多个用于保护目的的二极管作为元件。在这样的情况下，二极管可以例如由具有SMD触点的二极管制成。
在该方法的还有的实施例中，电元件位于基片中的腔中，当围绕该元件设置封装时，所述腔被充满。该实施例对于在高功率下操作的器件特别有利，因为所述实施例使得导热层被应用到腔的底部。该实施例还适用于模块，尤其是具有诸如放大器之类的高功率元件的模块。这样，各种部件可以容纳在不同的腔中，且通过三层或者多层载体接触和导电地相互连接。还可以在第一金属层中限定接触面，以接触基片上的导体。
在优选的实施例中，蚀刻掩模具有用于焊料的粘合剂层，该粘合剂层在载体的第一侧上也存在。该实施例的第一优点在于，该粘合剂层可以在制造载体期间被沉积。第二个优点在于，该粘合剂层还可以用作蚀刻掩模。第三个优点在于，该粘合剂层可以在单个过程中设置在载体的第一侧和第二侧上。
第一金属层和中间层的构图可以在设置电元件以前在制造载体期间，以及在组装过程期间进行。如果金属层很薄，通常小于近似30微米，那么如果这些层的构图形成组装过程的一部分是有利的。在这样的情况下，在运输期间，没有载体的折断或者变形的危险。此外，也没有在第一金属层和中间层中的孔被灰尘或者其它东西污染的危险。这样的污染可能减弱载体到封装的附着。
如果在设置电元件以前，液体或者可液化的层施加到载体的第一侧也是有利的。如果使用可液化的层，在已经设置电元件以后进行加热步骤，以液化所述可液化的层。通过使用这样的在未正式出版前的专利申请EP02077228.1(PHNL020471)中描述的层，抵消了焊料或者金属隆起的变形。使用这样的金属或者焊料隆起是已知的，且对相互连接元件和第一金属层的过程具有有利的效果。或者，例如可以使用导电粘合剂或者许多结合导线来建立所述连接。
根据本发明的方法可以有利地应用，尤其是结合本发明的载体应用。
本发明的第二个目的是提供在开始的段落中提到的类型的载体，通过该载体，可以在载体上组装电元件以后，在不需要光刻步骤的情况下制造一种紧凑然而坚固的电子器件。
所述第二目的实现为，该载体包括第一蚀刻掩模、第一金属层、中间层、第二金属层和第二蚀刻掩模的堆叠，该第一蚀刻掩模位于载体的第一侧上，该第二蚀刻掩模位于载体的第二侧上。
根据本发明的载体不同于已知的载体在于，蚀刻掩模存在在第一侧以及第二侧上。由于这样，可以在第一和第二金属层中限定独立的图案。
在有利的实施例中，至少第二蚀刻掩模包括用于焊料的粘合剂层。这样的粘合剂层的例子为，其中，包含金属Ag、Pd、Au和Ni中的至少一种的层。或者，对于低共熔焊接，可以使用具有Au和Ge的合金，诸如Ti-Ni-Au-Ge。蚀刻掩模可以包括粘合剂层，但是，替代的，可以存在另外的层，诸如光致抗蚀剂。这样的光致抗蚀剂具有的优点在于，其在载体的运输期间形成用于粘合剂层的保护层。已经发现，第二金属层，例如Cu，可以以足够好的蚀刻速度和相对于该粘合剂层的蚀刻选择性来蚀刻。对于蚀刻剂，例如使用Na2S2O8/H2SO4的溶液。粘合剂层可以通过电镀之类的镀附过程来有利地根据图案设置。
在还有的实施例中，第一蚀刻掩模也具有用于焊料的粘合剂层，该粘合剂层具有与在第二蚀刻掩模中的粘合剂层相同的成分。这样的载体可以通过将整个载体浸入浴槽中来以一种简单的方式来获得。在该过程中，粘合剂层在所述载体没有被覆盖的位置处沉积在载体的第一和第二侧上。使用相同的粘合剂层的另外的优点在于蚀刻剂的数量是有限的。由于该中间层，在蚀刻第一金属层期间，第二金属层不会被腐蚀。
在特别有利的实施例中，具有Ni、Pd和Au亚层的多个层可以用作粘合剂层。该层适用于设置电元件，以及导电地连接电元件，其还适用于蚀刻掩模和焊接电子器件。
载体的中间层最优选地由可以相对于第一金属层选择性地蚀刻的材料制成。优选的使用是利用金属，其具有中间层不需要单独地构图的优点。合适的金属的例子包括Al、Al合金、FeNi、FeCrNi和不锈钢。优选的，其具有在10到100微米之间的厚度，更加优选的，在20和50微米之间的厚度。优选的，第一和第三金属层具有在5和50微米之间的厚度，进一步优选的，在10和40微米之间的厚度。
如果用作阻焊剂的金属用于中间层，尤其是导电的，但是没有经历焊料的润湿的金属或者合金是特别有利的。当利用Al或者Al的合金作为中间层，且利用Cu作为第一和第二金属层时，获得了特别有利的结果。可以使用的Al合金其中包括AlxSi1-x、AlxCu1-x和AlxGe1-x，其中，优选的，0.5≤x≤0.99。
或者，中间层可以包含绝缘材料，在这样的情况下，导电连接设置在所述中间层中。这样的导电连接这样获得，即，例如通过在构图中间层以后从溶液施加导电层，以及通过镀附过程来加固所述导电层。可以从溶液施加的导电层的例子其中包括一层导电聚合物，诸如聚乙烯二氧噻吩(PEDOT)，以及通过溶胶-凝胶处理形成的银层。该中间层可以替代地包括亚层的堆叠。
本发明的第三个目的在于提供一种制造载体的方法，通过该方法，具有需要图案的层可以以有限数量的步骤设置在两个相对的侧上：
提供第一金属层、中间层和第二金属层的堆叠，其中，第一和第二金属层导电地相互连接，以及其中该中间层包括可以相对于第一金属层选择性地蚀刻的材料，以及其中该第一金属层位于第一侧上；
在第二侧上施加和构图光敏层；以及
在第一和第二侧上为焊料电化学地设置粘合剂层。
在根据本发明的方法中，粘合剂层在单个步骤中电化学地设置在载体的两侧上。这样，具有需要功能的载体以简单的方式获得。如果使用载体，在第二侧上的粘合剂层可以用作蚀刻掩模。
在有利的实施例中，根据第一金属层需要的图案，在光敏层已经施加到所述第一侧以后，粘合剂层施加到第一侧。在施加了粘合剂层以后，去除该光敏层，在这以后，粘合剂层用作第一金属层的蚀刻掩模。该金属层通过蚀刻来构图，在这以后，通过使用相对于第一和第三金属层是选择性的蚀刻剂来蚀刻来构图该中间层。在该过程中，相对于第一金属层出现蚀刻不足。对于光敏层，利用例如Shipley的SP2029-1。在固化以后，该层显示足够的机械稳定性。这样，在将光敏层施加到第二侧期间，可以允许载体没有任何问题地位于第一侧上的显影的和构图的光敏层上。
有利的粘合剂层包括从包括Ni、Pd、Ag和Au的组中选择的一种或者多种金属。这些金属可以呈现为亚层，而且为合金。
从下文中描述的实施例，以及参考下文中描述的实施例阐明的，将明白根据本发明的载体以及制造该载体和电子器件的方法的这些和其它方面。
在附图中：
图1是该电子器件的第一个实施例的示意性的截面图；
图2是该第一实施例的示意性的平面图；
图3是该电子器件的第二个实施例的示意性的截面图；以及
图4-9示出了制造如图3中所示的载体和电子器件的方法的步骤。
这些图不是按比例绘制的。同样的标号指同样的部分。替代的实施例在后附的权利要求书的保护范围内是可能的。
图1是电子器件10的第一个实施例的示意性的截面图。在这样的情况下，所述电子器件是具有五个触点的半离散的半导体器件。然而，这决不是必要的。图2是第一个实施例的示意性平面图，其中，线A-A表示图1的截面。该半导体器件包括具有第一金属层11、中间层12和第二金属层13的载体30。在该例子中，第一和第二金属层11、13包括Cu，中间层包括Al.99Si.01。此外，载体30包括第一蚀刻掩模14和第二蚀刻掩模17。该第一和第二蚀刻掩模14、17每个包括NiPdAu的粘合剂层。载体30通过第一蚀刻掩模14从第一侧构图，从而形成开口15和连接导体31-35。为此，利用蚀刻过程，其中，首先第一金属层11被蚀刻，随后，中间层12被蚀刻，从而在连接导体31-35的侧面中形成凹进16。随后，具有连接区域21的半导体元件20通过连接装置22连接到连接导体31-35，在这样的情况下，该连接导体为Au的隆起。为此，利用倒转芯片技术。随后，设置封装40，由于封装40延伸到载体的凹进16，导致形成机械锚定。随后，第二金属层13通过第二蚀刻掩模17来构图。这通过将该器件放置在蚀刻浴槽中，其选择性地相对于中间层以及相对于第二蚀刻掩模17来去除第二金属层13来实现。开口15随后也用于分离半导体器件10。这具有另外的优点，即，机械锚定大致封闭连接导体31-35，即，不但在半导体元件20的位置，而且超过所述的元件。半导体器件10的尺寸为例如近似1乘1mm。开口15例如具有40-100微米的宽度。第一金属层11、中间层12和第二金属层13的厚度选择为分别为30微米、40微米和30微米。
图3是根据本发明的器件10，在该情况下为半导体器件的第二个实施例的示意性的截面图。该器件10包括半导体元件20，其呈现在载体30上。所述载体30具有第一侧1和第二侧2，且包括多个连接导体31、32、33。具有侧面的所述连接导体31、32、33通过开口15相互隔离。在连接导体31、32、33和在半导体元件20中的连接区域21之间有连接装置，在该情况下为结合导线22。在该例子中，半导体元件20通过粘合剂层23接附到载体30的第一侧1。半导体元件20和结合导线22由封装40来封闭。该封装40延伸到载体30的开口15中。
根据本发明，凹进16存在于连接导体31、32、33的侧面中。这些凹进16充满封装40，其结果为，第一层31由封装40部分地夹住。这确保了封装40机械地锚定在载体30中，导致极好的粘附和机械强度。在这样的情况下，不需要在载体的第一侧1上设置粘附改进装置。该第一侧1还可以优化为放置半导体元件20和结合导线22。
根据本发明的还有的特征，第二粘合剂层17存在于载体30的第二侧上，第二金属层13具有与第二粘合剂层17相同的图案。结果，可以不需要在将电元件20组装在载体30上期间所必需的光刻步骤的情况下制造该器件。第二粘合剂层17也用作用于焊料的粘合剂层，其可以用于将器件10设置在印刷电路板上。
在该实施例中，载体30包括第一金属层11、中间层12和第二金属层13。第一金属层11和第二金属层13主要包括铜，中间层12主要包括铝。在第二层12中的凹进16通过蚀刻形成，如将要参考图4-9说明的。第一和第二粘合剂层包括NiPdAu或者NiPd。如本领域中的普通技术人员可以理解的，粘合剂层14、17还可以包括不同的合适的材料。通过延伸直到载体30的第二侧的开口15，构图第二金属层13，使得形成接触面，在该情况下为双极性晶体管。连接导体32接地，且用作散热器。
图4-12示出了根据本发明的方法中的各个步骤，其导致在图1中显示的第二个实施例。图4和5涉及制造载体30的方法。图7、8和9涉及制造器件10的方法。图6涉及两个步骤，其可以在制造载体30中，以及在制造器件10中进行。这里显示的方法具有这样的优点，即，它们可以在提供封装以后不需要光刻步骤的情况下进行，同时粘附到封装40很好，且在封装步骤以前，载体30不分离。
图4示出了第一个步骤以后的载体30，在该第一个步骤中，Cu的第一金属层11、Al的中间层12和Cu的第二金属层13相互附着。可以使用中间层12作为起始层，以及提供一层Cu在其任一侧上。或者，载体30可以通过将层11、12、13轧制在一起来形成，该技术通常用于形成双层。所述轧制过程也可以在两个步骤中进行。最后形成四层或者多层载体也是可能的。在第一个实验中，层11、12、13具有70微米的厚度。然而，该厚度可以在10微米和1.0毫米之间变化，且层11-13不是必须厚度相同。如果第一金属层11相当薄，其最好由具有大的机械强度和刚性的材料制成，诸如镍铁合金。结合所述材料，铜可以用作用于中间层12的材料。可以进行热处理，以改进层11、12、13之间的粘合，如果这是必要的。
图5示出了第一蚀刻掩模14设置在第一侧1上，以及第二蚀刻掩模17设置在第二侧2上以后的载体30。所述蚀刻掩模通过连续地将光致抗蚀剂(例如，Shipley的SP2029-1)施加到第一侧1和第二侧2上，以及随后构图所述光致抗蚀剂来设置。在构图操作中，光掩模也固化。第一侧1和第二侧2具有不同的图案。在第一侧1上的光致抗蚀剂已经构图以后，载体30颠倒转向，在这之后，光致抗蚀剂施加到第二侧上。随后，Ni、Pd和Au连续地设置在载体上。Ag是替代的。在这以后，载体准备好了。优选的，去除光致抗蚀剂。然而，光致抗蚀剂还可以维持，以用作保护层。
图6示出了已经进行了下面的步骤以后的载体30。首先，去除用作保护层的光致抗蚀剂。随后，载体30在多个浴槽中处理；首先，载体30在Na2S2O4/H2SO4溶液的浴槽中在45℃下蚀刻5到10分钟。结果，根据由第一蚀刻掩模14限定的图案来蚀刻第一金属层。接下来，载体30在浓缩的KOH溶液的浴槽中处理3分钟，其结果为，Al的中间层12被蚀刻，且形成凹进16。在所述的3分钟以后，凹进具有70微米的宽度。10-20微米的宽度足够获得需要的机械锚定。这样的宽度另外具有的优点在于，连接导体可以小型化；对于具有近似100微米的宽度的连接导体，其中，凹进16形成在两侧面上，凹进的宽度最多近似30微米。
图7示出了在半导体元件20接附到载体30，以及结合导线22设置在半导体元件20的连接区域21和连接导体31、33之间以后的载体30。尽管只显示了单个元件20，但是实际上大量元件设置在载体30上，其只在后面阶段分离。
图8示出了在封装40已经设置在第一侧1上以后的载体30。由于第二金属层13还没有构图，其用作封装材料的阻挡物。该材料也进入凹进16，从而引起第一金属层11机械地锚定在封装40中。封装40设置在载体的高度。封装40和载体之间的粘合可以通过使第一金属层11，从而蚀刻掩模14设置有粗糙表面来进一步改进。然而，在必须设置导线结合的位置处，该表面通过平坦化步骤来平坦化。该平坦化步骤在载体30设置有蚀刻掩模14、17以前已经进行。对于平坦化步骤，可以利用例如滚子，其使最外面平滑，而在该表面下保持一些孔开启，用于粘合封装。
图9示出了在构图第二金属层13以后的具有元件20和封装40的载体30。这通过将载体30的第二侧2放置或者浸入Na2S2O4/H2SO4溶液的浴槽中在45℃下持续5到10分钟来实现。图案选择为使得限定分离通道，其中，载体30被完全去除。在例如通过锯沿着这些分离通道切割封装40以后，获得了完成的器件10。

Claims (12)

1.一种制造包括载体的电子器件的方法，该载体在第一和相对的第二侧之间具有第一构图的金属层、构图的中间层和第二构图的金属层以及蚀刻掩模，该第一金属层导电地连接到电元件和第二金属层，且包括相对于中间层突出的部分，
该方法包括的步骤为：
将电元件设置在载体的第一侧上，该电元件的触点导电地连接到第一金属层；
施加封装，第一金属层的突出部分在该封装中锚定，以及
根据由蚀刻掩模限定的图案来从载体的第二侧蚀刻第二金属层。
2.如权利要求1所述的方法，其特征在于，该蚀刻的掩模具有用于焊料的粘合剂层，该粘合剂层也存在于载体的第一侧上。
3.如权利要求2所述的方法，其特征在于，该第一金属层和中间层这样构图：
根据需要的图案来构图第一金属层，粘合剂层根据用作为蚀刻掩模的需要的图案呈现，以及通过蚀刻剂来构图中间层，该蚀刻剂相对于第一和第三金属层是选择性的，相对于第一金属层出现蚀刻不足。
4.一种具有第一和第二侧的载体，其包括的堆叠为：
第一蚀刻掩模，
第一金属层，
中间层，
第二金属层，以及
第二蚀刻掩模，
第一蚀刻掩模位于载体的第一侧上，第二蚀刻掩模位于载体的第二侧上。
5.如权利要求4所述的载体，其特征在于，该第一金属层和中间层构图为使得第一金属层包括相对于中间层突出的部分。
6.如权利要求4或者5所述的载体，其特征在于，该第一和第二蚀刻掩模包括用于焊料的粘合剂层。
7.如权利要求6所述的载体，其特征在于，该用于焊料的粘合剂层包括从Ag、NiPd、NiPdAu中选择的材料。
8.如权利要求4或者5所述的载体，其特征在于，该中间层包括适于用作阻焊剂的导电材料。
9.如权利要求8所述的载体，其特征在于，该中间层包括从Al、Al合金、FeNi、FeCrNi和不锈钢中选择的材料，以及第一和第三金属层包含铜。
10.一种制造具有第一侧和相对的第二侧的载体的方法，其包括的步骤为：
提供第一金属层、中间层和第二金属层的堆叠，其中，第一和第二金属层导电地相互连接，其中，该中间层包括可以相对于第一金属层选择性地蚀刻的材料，以及其中该第一金属层位于第一侧上；
在第二侧上施加和构图光敏层；以及
在第一和第二侧上电化学地设置用于焊料的粘合剂层。
11.如权利要求10所述的方法，其特征在于，在设置粘合剂层以前，光敏层设置在第一侧上，随后构图。
12.如权利要求11所述的方法，其特征在于，其另外包括的步骤为：
根据需要的图案来构图第一金属层，在该过程中，粘合剂层用作蚀刻掩模，以及
使用蚀刻剂构图中间层，该蚀刻剂相对于第一和第三金属层是选择性的，导致相对于第一金属层的蚀刻不足。
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KR20040106338A (ko) 2004-12-17
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US20050153483A1 (en) 2005-07-14
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