CN1605130A - Optoelectronic component - Google Patents

Abstract

Optoelectronic component comprising a base body or housing (2), at least one optoelectronic semiconductor chip (3) arranged in a recess of the base body, and a potting compound (5) embedding the at least one semiconductor chip in the recess, the potting compound (5) being made of a transparent material, wherein the transparent potting compound (5) is designed to diffuse and contains, in particular, scattering particles (6) on which light impinging on it is diffusely scattered.

Description

Optoelectronic devices

The invention relates to an optoelectronic component according to the preamble of claim 1 , in particular a surface-mountable optoelectronic component.

In conventional surface-mountable optoelectronic components, the precased component is first produced in such a way that a prefabricated lead frame is injected with a suitable synthetic material which forms the housing of the component. The component has, for example, a recess or a cutout on the upper side, into which lead frame connections are introduced from opposite sides, wherein a semiconductor chip, for example a LED chip, is bonded and electrically connected to a connection connected. The gap is then filled with clear, translucent potting compound. Surface-mountable optoelectronic devices are disclosed, for example, from the document "Siemens SMT top LEDs (TOPLEDs) for surface mounting" by F.Möllmer and G.Waitl, Siemens Components 29 (1991), No. 4, pages 147-149 this basic form.

In these known surface-mountable designs, very directional radiation can be achieved in that the side walls formed by the plastic housing are formed as oblique reflectors. Depending on the form of the housing or the form of the reflector, the device can be designed as a so-called top viewer (Toplooker), that is, with a main beam direction that is basically perpendicular to the device installation plane, or as a so-called side viewer (Sidelooker) , ie with a main beam direction substantially parallel or at an acute angle to the device mounting plane. Examples of top viewers and side viewers with corresponding housing forms are shown, for example, in Figure 2 or Figure 3 of EP 0 400 175 A1.

Different conventional designs of optoelectronic components of the type mentioned at the outset are shown schematically in FIGS. 12 to 15 .

In the case of FIG. 12 , a semiconductor chip such as, for example, an LED chip is inserted in a narrow housing or base body. In this housing, the laterally emitted radiation from the semiconductor chip is reflected back to the side of the semiconductor chip by the side wall of the main body formed as a reflector, so that the radiation is lost there.

In the design of the conventional optoelectronic component shown in FIG. 13 , the light loss in the component is determined in particular by the special chip technology in which the majority of the emitted radiation is radiated obliquely to the rear by the semiconductor chip. The main part of the radiation emitted obliquely to the rear is absorbed by the substrate and lost.

14A and 14B show a side view or a top view of a base body filled with a plurality of LED chips, so that any desired color can be produced, for example, by mixing three primary colors. In this case, a part of the radiation emitted laterally by the LED chips is absorbed by the side faces of the adjacent LED chips, and the radiation is thus lost.

Finally, optoelectronic components are also disclosed whose base body is designed in a dark color, as is shown in FIG. 15A . This embodiment is used, for example, in order to achieve the best possible contrast between the radiation surface of the component and the remaining device surface, as can be seen in FIG. 15B . Such contrast improvements are used, for example, in display technology or display technology. A dark housing has the disadvantage that a certain portion of the light emitted by the LED chip is absorbed on the dark side walls of the cutout, thereby reducing the luminous efficiency.

Especially in components with a plurality of LED chips, as they are shown, for example, in FIG. 14 , a non-uniform and eccentrically acting light output from the emitting surface of the component also occurs. Furthermore, it is necessary to arrange several LED chips not all centered, so that when the device is viewed sideways, the light emission of the individual LED chips can exert different intensities of influence and thus, for example, in the case of a multicolor LED in which the color mixing starts from a certain Degrees start to become relative to angles.

Due to the clear, light-transmitting potting compound, the LED chip and its wiring from short distances can be partially differentiated. Especially when the beam characteristics are narrowed in order to achieve higher light intensities, the surface of the chip is projected onto the emitting surface of the component. In addition, when ambient light is incident, defective contrasts result from the ambient light reflected on the emission surface and the chip surface.

In order to avoid the above-mentioned unfavorable phenomena such as low efficiency, disturbing projections of the chip surface and wiring, non-uniform light emission and contrast defects, optoelectronic devices are used today, for example, which are realized by higher-quality and thus more expensive chip technology. High efficiency, especially LED chips in these devices emit light mainly through the chip surface.

For use in the field of display technology, where a good contrast in light emission is important, it is known from the prior art that on the one hand a dark color constitutes the device surface, as it is illustrated in FIG. The front aperture device is used to block the LED chip to prevent external light from entering.

Starting from the prior art described above, the object underlying the present invention was to develop an improved optoelectronic device of the type mentioned at the outset, which in particular emits more light to the front and which preferably clears the most extensive The above-mentioned shortcomings of conventional devices are overcome. In particular, homogeneous light emission and better contrast should be achieved with the optoelectronic component.

This object is achieved by an optoelectronic component having the features of claim 1 . Advantageous developments and embodiments of the invention are the subject matter of subclaims 2 to 12 .

According to the invention, the light-transmissive chip encapsulation, preferably a plastic encapsulation, is formed diffusely and for this purpose preferably contains scatterer particles, ie particles that scatter the radiation emitted by the LED chip in the These particles are scattered. The radiation beams emitted by the semiconductor chip in the lateral direction are scattered on the scattering body particles in such a way that they are at least largely no longer on the side walls of the cutout in the substrate and/or after reflection on the side walls of the cutout, on the semiconductor chip absorbed on the side. This increases the radiation component that emerges from the emission side of the component forwards, ie essentially in the direction of the optical axis. Device efficiency is thus improved.

The scatterer content in the chip encapsulation is determined in such a way that the beam in the axial direction is significantly increased compared to a similar chip encapsulation without scatterers. It is particularly preferred to determine the scatterer content in such a way that the beam in the direction of the axis is significantly increased while at the same time the total beam is only insignificantly reduced.

The contrast range is preferably determined such that the light gain in the direction of the axis is greater than the total light loss in the component caused by the scatterer particles (and also by absorption at the scatterer particles).

The stated conceptual axis direction refers to the optical axis of the LED chip.

Here, the introduction of scatterer particles is not for the purpose of enlarging the beam angle, but to promote the device to emit more light forward, and at the same time avoid the projection of chips and bonding wires. 5.4

In the device according to the invention, more light is emitted to the front than in an identical device without scatterer particles in the chip encapsulation. Scattering at the scatterer particles is clearly more effective than reflection at the side walls of the recesses in the substrate, which may be regarded as quite surprising.

This effect is particularly effective on chips which emit a substantial part of the electromagnetic radiation generated in the chip via the chip side, for example via the side of the substrate on which the epitaxially produced semiconductor layer sequence is located. Such LED chips are referred to below as side-emitting LED chips. This is the case, in particular, for example in the LED chips described in documents WO 01/61764 and WO 01/61765. In this regard the publications of WO 01/61764 and WO 01/61765 are hereby incorporated by reference.

Such an LED chip is designated below with "ATON" and, if applicable, by a subsequent color specification, and is characterized in that the emission produced in the chip is emitted laterally to the rear via at least one side region and thus not in the beam direction of the component. A significant portion of the beam, the sidewall regions run obliquely, curved or stepped with respect to the main direction of extension of the beam-generating epitaxial layer sequence. In this case, the side regions are inclined in the direction of the chip rear. Especially in the case of components with such LED chips, the diffuser particles in the chip encapsulation surprisingly lead to a significantly increased forward radiation compared to components of this type without diffuser particles in the chip encapsulation.

In addition, the radiation emitted by the semiconductor chip is dispersed uniformly by the diffuser particles. On the one hand, this promotes a uniform radiation of light from the emitting surface of the component, and on the other hand, avoids shadowing of the chip surface and of the wiring of the LED chip.

A further advantage of the inventive measure is that the diffuser particles act not only on the light emitted by the LED chip, but also on the ambient light incident from outside. In contrast to a clear potting material without scatterer particles, ambient light is therefore not reflected back specularly, but rather diffusely, so that the component ensures better contrast.

A particular advantage of the invention is also that the contrast properties of the device according to the invention are superior to those of conventional surface-emitting devices, which is of great importance especially in display applications. In addition, the optical density of the device of the invention is lower because the emitting area is larger. The entire area of the chip envelope provided with scatterer particles is emitting. A further advantage of the invention is that disturbing reflections of sunlight on the component are thus reduced.

The proportion of scatterer particles in the transparent potting compound is preferably between approximately 0.1% and 10%, particularly preferably between 0.15% and approximately 3.0%, very particularly preferably between approximately 0.75% and approximately 1.25%. This applies in particular to scatterer particles, preferably CaF scatterer particles, in epoxy casting resins.

As in conventional optoelectronic components, the transparent potting compound can be an epoxy resin, while the base body can consist of a thermosetting or thermoplastic material, so that conventional production methods can advantageously be used.

In order to further improve the contrast with respect to light emission, it is advantageous if at least one surface of the main body, in particular the surface facing forward, is darkened or even black.

With the help of the following description of a preferred embodiment, the above and other features and advantages of the present invention will be described in detail according to the accompanying drawings ( FIGS. 1 to 16 ):

Fig. 1 has shown the schematic diagram according to the basic structure of optoelectronic device of the present invention with sectional view;

2A-2D show different preferred embodiments of the optoelectronic component according to the invention in extremely simplified illustrations;

Figure 3 shows a graph of the beam characteristics of an optoelectronic device according to the invention compared with a conventional device;

Figures 4A-4C show tabular and graphical representations of light intensity measurements obtained in a first experimental series on an optoelectronic device according to the invention;

Figures 5A-5C show tabular and graphical representations of luminous flux measurements obtained in a first experimental series on an optoelectronic device according to the invention;

6A-6C show graphs of the beam characteristics of different LED chips, which were measured in a first experimental series on an optoelectronic device according to the invention;

Figures 7A-7C show tabular and graphical representations of light intensity measurements obtained in a second test series on an optoelectronic device according to the invention;

Figures 8A-8C show tabular and graphical representations of luminous flux measurements obtained in a second experimental series on an optoelectronic device according to the invention;

9A-9C show graphs of the beam characteristics of different LED chips, which were measured in a second test series on an optoelectronic device according to the invention;

Figures 10A-10C show tabular and graphical representations of light intensity measurements obtained in a third experimental series on optoelectronic devices according to the invention;

Figures 11A-11C show tabular and graphical representations of measurements of luminous flux obtained in a third experimental series on an optoelectronic device according to the invention;

Figures 12-15B show schematic diagrams of different implementations of conventional optoelectronic devices: and

Figure 16 shows a graph of a device with CaF as the scatterer material in the epoxy die cast compound, plotting the luminance in the forward direction and the total luminance according to the scatterer content, and having InGaN-based LED chips in surface-mountable LED housings.

First, the basic structure of the optoelectronic component according to the invention will be explained with the aid of FIG. 1 . The different possible embodiments of the component are then described with reference to FIGS. 2 and 3 , as well as the mode of operation according to the invention. Finally, three test series were carried out by the inventors, the measurement results of which are shown by means of FIGS. 4-11 .

FIG. 1 shows a schematic cross-sectional view of a surface-mountable optoelectronic component embodied according to the invention. The base body 2 is formed under housing molding conditions by injecting the leadframe 1 from the outside with a suitable plastic material. The housing 2 has a central opening in which a semiconductor chip 3 , for example an optoelectronic transmitter chip, is arranged and electrically conductively connected to the electrical connections 1A, 1B of the lead frame 1 by means of wire bonding 4 .

The inner face 2A of the recess of the base body 2 is preferably formed obliquely, as shown in FIG. 1 . By selecting a suitable material for the base body 2 with high reflectivity, it is also possible to use these oblique inner faces 2A as reflectors in order to increase the beam output or reception sensitivity of the optoelectronic component.

It should be pointed out at this point that the invention is not limited to the design of the head-up viewer shown in the illustrated embodiment (see introduction to the description). Of course, by employing the measures according to the invention it is also possible, in particular, to construct components with a side viewer design (see introduction to the description).

For example, a plastic, preferably a thermoplastic or thermosetting plastic, is used for the base body 2 of the component. It has been found in the past that polyphtalamides, for example, which can also be cross-linked with glass fibers, are particularly suitable for this.

In the chip encapsulation 5 , for example, the optoelectronic semiconductor chip 3 is embedded in a transparent potting compound. The emission surface or beam output surface 7 of the chip encapsulation 5 facing away from the semiconductor chip 3 is essentially enclosed by the surface 8 of the base body 2 . However, it should be pointed out that within the scope of the invention, depending on requirements, it is of course also possible to select a different fill height of the chip encapsulation 5 in the recess of the base body 2 .

Usually, a transparent material is used as the material of the chip encapsulation 5 , and the material preferably has UV-excited or light-excited cationic hardening properties. The preferred material 5 contains a UV-activated or light-excited cationic hardening epoxy resin, which starts hardening or pre-curing in a few seconds by irradiation with a light beam or UV beam, and at a later time It can be thoroughly hardened by heating (aushrten). However, acrylic resins such as PMMA or silicone resins are also suitable materials.

According to the invention, the chip encapsulation 5 is formed diffusely. This is preferably achieved in that the chip encapsulation 5 contains scatterer particles 6 which diffusely scatter radiation beams, in particular light rays, impinging on them.

The fraction of the scatterer particles in the transparent casting compound is between approximately 0.15% and approximately 2.0%, preferably between approximately 0.75% and approximately 1.25%, and particularly preferably approximately 1.0%. The optimal composition of the scatterer particles is also related to the structural height of the device or its components.

It should be pointed out here that the invention is not restricted to specific scatterer particles. A professional in the fields of optoelectronics or optics will have no problem finding suitable scatterer particles for his purpose, the size and material composition of which may also depend on the wavelength of the radiation to be scattered. The selection of suitable scatterer particles is inter alia related to the wavelength of light emitted by the LED chip 3 or to be received.

Furthermore, depending on the choice of material of the base body 2 and the desired optical properties of the optoelectronic component, the chip encapsulation 5 can additionally contain other components in addition to its above-mentioned main components of epoxy resin and scatterer particles , in order to adjust the connection strength with the base material, initial hardening time and complete hardening time, light transmittance, refractive index, heat resistance, mechanical hardness, etc. as desired.

2A-2D show different configurations of optoelectronic components, wherein the inventive development of the component can preferably be used.

FIG. 2A thus shows a device with a predominantly side-emitting LED chip 3 in a narrow opening in the base body 2 . The laterally emitted radiation is partially scattered by the scattering body particles 6 present in the chip encapsulation 5 , so that this component of the radiation is not reabsorbed by the sides of the LED chip 3 after reflection at the side walls of the cutout. Compared with conventional optoelectronic components, the component of the radiation emitted by the emission area 7 of the component is thus made larger, ie the efficiency of the component is increased.

The same principle applies if, instead of the light-emitting LED chip 3 , an optoelectronic sensor for receiving the radiation is used. In this case, too, the efficiency of the component is increased, since due to the scattering of the incident radiation on the scatterer particles 6 , a greater proportion of the incident radiation can be absorbed by the side of the semiconductor chip.

The scatterer particles 6 in the chip encapsulation 5 not only increase the efficiency of the device, but also distribute the light radiated by the emitting surface evenly over the entire emitting surface 7 and also prevent projections on the chip surface or the wires 4 .

In addition, even when the beam characteristics of the LED chips are dispersed based on, for example, incorporating a plurality of LED chips 3 in a device without scatterer particles, the beam emitted by the LED chips 3 is diffusely scattered to make the beam emission of the LED chips 3. Beam features are aligned to the center. This is illustrated in the diagram in Figure 3. The beam characteristic with the scatterer particles increased to 1% composition is better centered, as this is illustrated by the two curves 2 and 3, while the curve denoted by 1 shows the conventional blue LED The beam behavior of the chip 3 , which is decentered to the right in the diagram of FIG. 3 . Due to the fact that the measurements were made with respect to the reference axis, even higher measured values for the luminous flux in curves 2 and 3 result.

A further advantage of the scatterer particles 6 in the chip encapsulation 5 is found in particular in the field of display technology or display technology applications, where incident light from the outside is fundamentally a problem for the clear and conspicuous display of information. In contrast to a clear resin as potting compound 5 , incident ambient light is not reflected back, but is diffusely reflected by the scattering body particles 6 . The ambient light thus loses its intensity, which leads to a better contrast of the display even with incident ambient light.

FIG. 2B shows an optoelectronic component with an LED chip 3 , wherein the majority of the emitted light radiates obliquely to the rear starting from the side walls of the chip, ie in the direction of the interior of the housing. This is caused by sidewall regions which run obliquely, curved or stepped inwardly with respect to the main direction of extent of the epitaxial layer sequence, as illustrated in FIG. 2B . For example, in documents WO 01/61764 and WO 01/61765, such LED chips 3 are described below with "ATON" and, if applicable, a color specification, the publications of which are hereby cited at this point. In contrast to conventional solutions for device housings, which are essentially based on reflections on the inner walls of the recess, the emitted light is scattered here on diffuser particles distributed in the chip encapsulation and directed towards the device front reverse. This leads to the advantages already mentioned (see the introduction to the description and the description of the embodiment according to FIG. 2A ). In the component according to FIG. 2B , the advantageous effect of the inventive configuration of the chip encapsulation is especially effective.

Figure 2C shows a device with a plurality of LED chips 3, as this is used, for example, to construct a multicolor LED device. In conventional components, up to 30% of the light emitted by the LED chip is absorbed in this case by the further LED chip and the steep side walls of the cutout. By means of the diffuser particles 6 arranged according to the invention, the light rays are deflected before they impinge on the side faces of adjacent LED chips and the side walls of the cutouts, and thus leave the component through the emitting surface 7 .

Finally a device with a dark or black matrix 2 is shown in FIG. 2D . Here too, the light is deflected by the scattering body particles 6 in the potting compound 5 and reaches the emitting surface 7 of the component before impinging on the black side walls of the cutout.

Of course, all the mentioned advantages occur in all the illustrated embodiments, especially like higher efficiency, more uniform light emission, centered beam characteristics, avoidance of projections on the chip surface and better contrast, even if These advantages have not been repeated again in all the illustrated embodiments.

A total of three test series carried out on optoelectronic components constructed according to the invention are now described below.

1. Test series

In the first test series, three-color LED devices (also known as RGB (Red Green Blue) multiple LEDs (Multiled)) were measured, which LED devices roughly correspond to the diagram of FIG. 15B in plan view, and which have Completely black base. The three LED chips emit in orange ("HOP amber") at about 615 nm, in green ("ATON true green") at about 526 nm, or in blue ("ATON blue") at about Beams in the 467nm band.

The table shown in Figure 4A shows the light intensity in mcd (10-3 candela) for 0.19%, 0.50%, 1.0% and 1.50% in the casting material at a diode current of 20mA. % of scatterer particles is measured for different concentrations or compositions. For comparison, the measured values of conventional components with potting compound without scatterer particles (composition 0%) are also given. The same measurements are again illustrated in the bar graph of Figure 4C.

In addition, the relative light intensity is shown in the table in FIG. 4B relative to a 100% scatterer particle-free casting material. As explained, an increase in light intensity of up to 21.8% (scatterer component 1.0%, blue LED) can be achieved by means of the invention.

Figures 5A-5C show the results of the same test series, where luminous flux in mlm (10-3 lumens) or relative luminous flux, respectively, is stated or labeled here instead of light intensity.

Finally, FIGS. 6A-6C respectively show the beam characteristics of orange, green or blue LED chips 3 with different components of scatterer particles in the potting material. As can be clearly seen, passing through the scatterer particles of this component results in a more uniform and more centered beam behavior than in casting materials without diffuse scattering properties. Furthermore, it has been found that the best results with regard to the beam properties can be achieved with a fraction of approximately 1% of scatterer particles. It has also been seen that these advantages are particularly pronounced in chips with predominantly lateral radiation ("ATON").

2. Test series

In the second test series, three-color RGB multi-LEDs were also measured which, in contrast to the first test series, were provided with a white base body. The three LED chips in turn emit in orange ("HOP amber") at about 614 nm, in green ("ATON true green") at about 532 nm, or in blue ("ATON blue") Beams in the wavelength band around 465nm.

The table shown in Figure 7A shows the light intensity in mcd measured for different concentrations of scatterer particles in the cast material between 0% and 1.0% at a diode current of 20mA . The same measurements are also illustrated in the bar graph of Figure 7C.

Figure 7B is a table showing relative light intensity relative to 100% scatterer particle free cast material. As shown, in this test configuration an increase in the light intensity of up to 18% (scatterer component 1.0%, green LED) can be achieved by the invention.

Figures 8A-8C show the results of the same test series, where luminous flux in mlm or relative luminous flux, respectively, is stated or labeled here instead of light intensity.

FIGS. 9A-9C finally show the stepwise improvement of the respective beam properties of orange, green or blue LED chips 3 as a result of the increased composition of the scatterer particles in the potting compound.

3. Test series

In the third test series, optoelectronic components according to the invention with individual blue ("ATON blue") LED chips were finally investigated analytically. Here, so-called top LEDs and micro-top LEDs with a fraction of about 1% scatterer particles in the potting compound are compared with corresponding devices without scatterer particles in the potting compound.

The table of Figure 10A shows the light intensity in cd (candela) measured at diode currents of 10mA, 20mA, and 30mA, while the table of Figure 10B shows the light intensity measured at diode currents of 10mA, 20mA, and 30mA. , relative to the relative light intensity of a device with no scatterer particles (100%) cast material. Measurements of light intensity are also illustrated in the bar graph of Figure 10C.

In the case of miniature top LEDs, an increase of 2% in light intensity can be achieved by the diffusely scattering potting material, and in the case of top LEDs an increase of up to 7% can even be achieved.

Figures 11A-11C again show the results of the same test series, where luminous flux in lm (lumens) or relative luminous flux, respectively, is stated or labeled here instead of light intensity.

From the diagram shown in Fig. 16 it can be seen that the optical radiation in the axial direction first grows with increasing scatterer content before the subsequent total beam and even forward radiation decreases again with further increasing scatterer content , without a simultaneous drastic decrease in the total beam. Four bar pairs (Balkenpaar) of four different concentrations of scatterer particles in the casting material are marked in the diagram, in which the respective left bar represents the brightness in the forward direction (or axial direction), while The bars to the right of each represent the total beam. The bars are shown for four different concentrations, ie for 0%, 1%, 3%, and 9% of the scatterer component in the potting compound. The concentration of scatterer particles belonging to each bar pair is indicated by the bar pair in each case. The value determined for 0% scatterer content was used as reference. Measured values were ascertained on the light-emitting diode component according to FIG. 1 . The LED chip is an InGaN-based LED chip with a SiC substrate, which emits the main part of the beam generation in the chip via the chip side walls. The scatterer material is CaF. It can be seen that the maximum in the forward radiation is at approximately 3% of the scatterer component in the potting compound. At a scatterer fraction of around 1%, a significant increase in the forward radiation occurs with a simultaneously almost negligible loss of total optical power.

Light-emitting diode devices having the inventive scatterer component in the die potting compound have significantly improved contrast properties compared to light-emitting diode devices of the same type without scatterers. In addition, in the light-emitting diode component according to the invention, depending on the amount of scatterers, the projection of the LED chip and possibly the bonding wire is advantageously significantly reduced. The light radiation takes place through the entire front side of the die casting material.

It should be generally stated here that light-scattering phosphor particles contained in the potting compound, as they are used, for example, in white-emitting light-emitting diode components based on blue-emitting LED chips, can at the same time scatter Somatic particles, and thus may at least partly cause or support the effects of the present invention.

It has also been found that the incorporation of scatterer particles into potting compounds containing phosphor particles, as they are used for example in the aforementioned white-emitting light-emitting diode components, can lead to an increase in the light emission in the axial direction. It is decisive here that the casting compound is mixed with scatterer particles in a suitable concentration.

For the sake of completeness, it should also be stated that under the term potting material not only chip encapsulation materials which are processed by means of potting technology, but also materials which are deposited on chips by means of other technologies such as injection molding or injection molding are to be understood. Chip encapsulation materials are also classified under it.

Claims (13)

1. An optoelectronic component with a beam-emitting semiconductor chip (3) arranged in a recess of a base body or housing (2), wherein said base body or housing (2) consists of a material which The material is at least partially absorbing for the radiation emitted by the semiconductor chip (3), and the semiconductor chip (3) emits its radiation mostly through the chip side walls, and the semiconductor chip (3) The chip (3) is at least partially embedded in the recess in a chip encapsulation (5), in particular a synthetic material, which is substantially transparent to the radiation emitted by the semiconductor chip (3) , It is characterized in that, The chip encapsulation (5) is designed so diffusely that the radiation emitted from the semiconductor chip (5) laterally in the direction of the base body or housing (2) strikes the base body Or before the boundary of the casing (2) abuts against one surface of the notch, most of the beam is deflected toward the beam output surface (7) of the chip package (5). 2. Optoelectronic device according to claim 1, It is characterized in that, The chip encapsulation (5) contains radiation-scattering particles (6) on which the radiation to be deflected is scattered. 3. Optoelectronic device according to claim 2, It is characterized in that, In the chip encapsulation (5), the fraction of the beam-scattering particles (6) is between about 0.1% and about 10%. 4. Optoelectronic device according to claim 3, It is characterized in that, In the chip encapsulation (5), the fraction of the beam-scattering particles (6) is between about 0.15% and about 3.0%. 5. Optoelectronic device according to claim 4, It is characterized in that, In the chip encapsulation (5), the fraction of the beam-scattering particles (6) is between about 0.75% and about 1.25%. 6. Optoelectronic component according to one of the preceding claims, It is characterized in that, The chip encapsulation ( 5 ) comprises a reactive resin, in particular epoxy resin, acrylic resin or silicone resin. 7. Optoelectronic component according to one of the preceding claims, It is characterized in that, The side walls (2A) of the cutouts in the base body (2) are formed as reflectors. 8. Optoelectronic component according to one of the preceding claims, It is characterized in that, Said base or shell (2) is made of a thermosetting or thermoplastic material. 9. An optoelectronic device according to claim 7, It is characterized in that, At least one front side of the main body or the housing (2) is black. 10. Optoelectronic component according to one of the preceding claims, It is characterized in that, A plurality of semiconductor chips (3) are arranged adjacent to each other in the cutout. 11. Optoelectronic device according to claim 10, It is characterized in that, The semiconductor chips (3) each emit radiation of only one spectral color, and different semiconductor chips (3) emit radiation of different colors. 12. Optoelectronic component according to one of the preceding claims, It is characterized in that, The or at least one of the semiconductor chips has at least one sidewall region through which a substantial part of the radiation generated in the chip is emitted laterally or backward in the direction of the substrate. 13. Optoelectronic device according to claim 10, It is characterized in that, Said side wall regions run obliquely, curved or stepped with respect to the main direction of extent of the epitaxially produced beam-generating semiconductor layer sequence.

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