CN1476065A - Image sensor packaging method - Google Patents
Image sensor packaging method Download PDFInfo
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- CN1476065A CN1476065A CNA031297544A CN03129754A CN1476065A CN 1476065 A CN1476065 A CN 1476065A CN A031297544 A CNA031297544 A CN A031297544A CN 03129754 A CN03129754 A CN 03129754A CN 1476065 A CN1476065 A CN 1476065A
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- image sensor
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000003292 glue Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 26
- 238000003466 welding Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 10
- 238000010023 transfer printing Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000006071 cream Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004026 adhesive bonding Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 15
- 239000004033 plastic Substances 0.000 description 10
- 229920003023 plastic Polymers 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Solid State Image Pick-Up Elements (AREA)
Abstract
An image sensor packaging method is mainly to assemble an image sensor on a PCB circuit substrate, at least one surface of the PCB circuit substrate is provided with a conductive layer and a window, the specification of the window is similar to the size of a sensing area of an image sensor grain, the conductive layer is etched by a photomask to form a plurality of pins, the pins are partially covered with an electrical connection medium corresponding to the position of an image sensor grain welding pad, the grain is jointed to the PCB circuit substrate by an SMT process to form electrical connection, the surface of the image sensor grain is cleaned to remove residues, the grain is sealed by glass gluing according to the position of the sensing area of the grain corresponding to the image sensor, and glue is filled around the grain and the glass to form air tightness and complete the packaging main process. The invention can simplify the mechanical equipment required by the manufacturing process, improve the reliability of the product and greatly reduce the packaging volume so as to better meet the market demand of light weight, thinness and shortness of the product.
Description
Technical field
The present invention relates to a kind of CMOS/CCD (complementary metal oxide semiconductor/electric charge or photoelectric coupling element) image sensor package method.
Background technology
Common image sensor (Image sensor) IC mounting technology is pottery assembling (CLCC), Figure 15, plastic base assembling (PLCC) shown in Figure 16, L/F plastics ejaculation assemblings (KLCC) shown in Figure 17, the main common trait of these mounting technologies is to carry out routing (Wire bonding) again after crystal grain is inserted crystal cup (Die pad), yet extensively reach under the leading of general consumption electronic products in the image sensor application, volume restrictions to assembly cost and assembly more and more is tending towards strict, so there are the following problems for aforementioned mounting technology;
(1) pottery assembling (CLCC) required substrate is burning technology production and is difficult for causing assembly cost too high, only is used on the product that requires high power and high-reliability usually.
(2) plastic base assembling shown in Figure 15 (PLCC) needs to penetrate (Pre-mold) side wall 80a at pcb board; the substrate 80b that the L/F plastics penetrate assembling (KLCC) needs to penetrate with lead frame; these two kinds of assembling method processing procedures need to be equipped with in addition jetting mold; so processing procedure is numerous and diverse and the only ceramic assembling of cost is low; and both packaging body poor heat radiation easily cause crystal grain or the product warpage (Warpage) and the problem of making moist, and cause the reliability of product relatively poor.
(3) plastic base shown in Figure 16 assembles (PLCC), and its substrate mainly is to fold another pcb board of frame again and glue together to form above the pcb board 81b of tool wiring, so its processing procedure is complicated, and can cause two-layer pcb board to peel off because of gluing together flaw.
(4) plastic base assembling (PLCC) and L/F plastics penetrate the processing procedure that assembling increases lead frame (Leadfram) 81,82, though but automation is made in a large number, but need to consider that lead frame precision overcomes the reliability issues that routing engages, and be difficult for being applied in the Chip Packaging of high I/O.
All need carry out routing (Wire bonding) based on aforementioned mounting technology, except increasing equipment, be difficult for enhancing productivity, and the demand that is subject to substrate makes its final packaging body volume excessive, so for mobile phone, PDA, the mobile electronic product of network camera etc. and so on still belongs to excessive, so, the trend of mounting technology is towards covering crystalline substance (Flip chip) packaged type at present, this kind processing procedure needs to be provided with long projection (Bump) on wafer (Wafer), engage with circuit junction on the substrate again, therefore need the crystal grain end face towards substrate, so limited the prerequisite that the sensing area of image sensor must be opened, so, have the best opering characteristic of electric apparatus though cover crystalline substance, good and the less package dimension of crystal grain heat radiation, this technology still has difficulty in the application of image sensor, as shown in figure 18, be existing a kind of image sensor crystal covering type assembly structure 9, glass plate 91 inner faces of its top are to utilize light shield etching technique framework to go out circuit 910, so its processing procedure is rather complicated and may make moist etc. and to influence its encapsulating products reliability because of glass plate and intercrystalline filler shortcoming influence optical characteristics or crystal grain.
Summary of the invention
In order to overcome the above-mentioned shortcoming that existing image sensor package method exists, the invention provides a kind of image sensor package method of exempting from lead frame, can finish assembling with SMT (surface mount) assembly equipment, with simplification required plant equipment of processing procedure and lifting production reliability, and encapsulation volume is significantly reduced more to meet the compact market demand of product.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of image sensor package method, it is characterized in that, may further comprise the steps: at least one surface of a PCB circuit substrate has conductive layer, it is offered a window is through to another correspondence from the surface of tool conductive layer surface, the sensing area size of the specification of window and an image sensor is close, and is covered with veil around the wall edge of window; This PCB circuit substrate is carried out light shield etching (Etching) make this conductive layer form a plurality of pins (Lead), pin and outer pin two positions in each pin (Lead) comprises in window side; Covering tool conductivity and connecting medium in the pin part in each at the PCB circuit substrate; One image sensor crystal grain (Chip) is being covered the electric connection media location with pin in its weld pad correspondence to be engaged to the PCB circuit substrate and to constitute electric connection with covering brilliant method; Clean image sensor grain surface (Spin dry) with removing residues; Around the crystal grain and and the PCB circuit substrate between slit filling (Underfill) glue material airtight so as to constituting; Capping is glued together with a glass in corresponding image sensor crystal grain position.
Aforesaid image sensor package method, wherein glass is another the surperficial the window's position of PCB circuit substrate that is covered in corresponding crystal grain.
Aforesaid image sensor package method, wherein the crystal grain induction zone of corresponding image sensor is with the capping of glass gummed.
Aforesaid image sensor package method wherein is covered with the veil mode around the wall edge of window and comprises and coat welding resisting layer (Solder mask) or gold-plated covering.
Aforesaid image sensor package method, wherein the PCB circuit substrate in each pin to cover tool conductivity connection medium be elargol, the mode of covering is with the coating of wire mark method, dotting glue method or needle-like tool transfer printing, toasts joint and put to continue after on the interior pin at image sensor crystal grain.
Aforesaid image sensor package method, wherein the PCB circuit substrate in each pin to cover tool conductivity connection medium be tin cream, the mode of covering be with the wire mark method apply, with dotting glue method or needle-like tool transfer printing, carry out reflow (Reflow) joint and image sensor crystal grain places in, continue after on the pin.
Aforesaid image sensor package method wherein carries out light shield etching (Etching) at this PCB circuit substrate and makes this conductive layer after window side forms a plurality of pins (Lead), coats welding resisting layer (Solder mask) at least between each pin (Lead).
Aforesaid image sensor package method, wherein slit filling glue material (Underfill) is a UV glue around the crystal grain and between the PCB circuit substrate, the glass that is covered in the window's position is to go filling glue material with UV glue point glue rear seal-cover again at glass periphery, and UV glueds joint and continuously hardens with ultraviolet irradiation everywhere.
Aforesaid image sensor package method wherein utilizes a machine or SMT equipment that glass is covered in PCB circuit substrate the window's position.
Aforesaid image sensor package method, wherein glass gives plated film earlier, and one side is plated AR film another side plating IR film.
Aforesaid image sensor package method, wherein PCB circuit substrate both side surface all has conductive layer, make this PCB circuit substrate carry out after the light shield etching (Etching) wherein a conductive layer window side form a plurality of in pin (Inner lead), in each pin be electrically connected to another conductive layer the window side etching form a plurality of outside pin (Out lead).
The invention has the beneficial effects as follows, can finish assembling,, and encapsulation volume is significantly reduced more to accord with the demands of the market with simplification required plant equipment of processing procedure and lifting production reliability with SMT (surface mount) assembly equipment.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is required PCB circuit substrate schematic diagram in the package method of the present invention.
Fig. 2 opens the schematic diagram of a window for PCB circuit substrate in the package method of the present invention.
Fig. 3 is the schematic diagram that forms pin in the package method of the present invention after the etching of PCB circuit substrate conductive layer light shield.
Fig. 4 is covering the front view that electrically connects medium for the pin of PCB circuit substrate in the package method of the present invention.
Fig. 4 A is covering the vertical view that electrically connects medium for the pin of PCB circuit substrate in the package method of the present invention.
Fig. 5 is engaged to the front view of PCB circuit substrate the window's position for an image sensor crystal grain in the package method of the present invention.
Fig. 5 A is engaged to the vertical view of PCB circuit substrate the window's position for an image sensor crystal grain in the package method of the present invention.
Fig. 6 be behind hookup 5 processing procedures around the crystal grain schematic diagram of filling glue material.
Fig. 7 is the schematic diagram of PCB circuit substrate another side the window's position in the package method of the present invention with the capping of glass gummed.
The schematic diagram of one of image sensor embodiment that Fig. 8 finishes for package method of the present invention.
Fig. 9 is applied in image sensor shown in Figure 8 in the schematic diagram of one printed circuit module.
Two schematic diagrames of the image sensor embodiment that Figure 10 finishes for package method of the present invention.
Three schematic diagrames of the image sensor embodiment that Figure 11 finishes for package method of the present invention.
Four schematic diagrames of the image sensor embodiment that Figure 12 finishes for package method of the present invention.
Five schematic diagrames of the image sensor embodiment that Figure 13 finishes for package method of the present invention.
Six schematic diagrames of the image sensor embodiment that Figure 14 finishes for package method of the present invention.
Figure 15, Figure 16 are the schematic diagram of existing plastic base assembling (PLCC) image sensor.
Figure 17 penetrates the schematic diagram of assembling (KLCC) image sensor for existing C/F plastics.
Figure 18 is the existing schematic diagram that covers crystalline substance (Flip chip) encapsulation image sensor.
Embodiment
Cooperate the flow process of Fig. 1, comprising to explanation shown in Figure 8 image sensor package method of the present invention:
Step 1: as shown in Figure 1 and Figure 2, a window 12 is offered on PCB circuit substrate 10 surfaces that have a conductive layer 11 on a surface, this window is through to the surface of another correspondence of PCB circuit substrate, the specification of window is comparable to the sensing area size (shown in Fig. 5 label 21) of an image sensor, and coats veils 121 such as welding resisting layer (Solder mask) or gold-plated covering around the wall edge of window and fall into the image sensor grain surface to prevent the dust fall after the substrate processing.
Step 2: as shown in Figure 3, aforementioned PCB circuit substrate is carried out light shield etching (Etching) make this conductive layer form a plurality of pins (Lead) 110, pin 110a and outer pin 110b two positions in each pin is set at and comprises in window side.
Step 3: as shown in Figure 4, at least coat welding resisting layer (Solder mask) between each pin (Lead) at the PCB circuit substrate, carry out each interior pin part according to image sensor crystal grain (Chip) bond pad locations again and covering tool conductivity connection medium 13, dielectric material comprises elargol, tin cream or has the joint glue material of conductive characteristic, and the part is covering that mode can utilize then that the wire mark method applies, needle-like tool transfer printing or form a solder joint at interior pin with dotting glue method.
Step 4: as shown in Figure 5, with SMT equipment pin in the corresponding PCB circuit substrate of one image sensor crystal grain (Chip), 20 weld pads is covered electric connection medium 13 positions and covering brilliant method joint formation electrically connect, and in image sensor crystal grain places on the pin after, looking then and electrically connecting medium is that elargol or tin cream are selected to toast and engaged or reflow (Reflow) engages.
Step 5: with centrifugal cleaning (Spin dry) with image sensor grain surface removing residues.
Step 6: as shown in Figure 6, around the crystal grain and and the PCB circuit substrate between slit filling (Underfill) UV glue material 201 airtight to constitute, harden with ultraviolet irradiation then.
Step 7: as shown in Figure 7, around another surface window 12 of the PCB circuit substrate of corresponding crystal grain with utilizing last slice machine or SMT equipment behind the UV glue point glue again with a glass 3 capping the window's positions, filling UV glue material 31 is airtight to constitute around glass then, hardens with ultraviolet irradiation again.
Figure 8 shows that the image sensor structure of finishing according to aforementioned package method of the present invention, and can find out significantly by aforementioned processing procedure, this image sensor utilizes the PCB circuit substrate to replace plastics and penetrates substrate, light shield etching conductive layer is made pin to replace old lead frame, so having equally, the encapsulation quality covers the best opering characteristic of electric apparatus that brilliant method possesses, advantages such as the good and less package dimension of crystal grain heat radiation, compare with other image sensor mounting technology, the present invention reduces the packaging cost except designs simplification, also outside device requirement or committee, reduce many especially on the time-histories of foundry, compare with general Flip Chip, also not be used in the crystal grain upper surface and carry out filling (Underfill), more guarantee production reliability.
In application facet, the image sensor that package method of the present invention is finished can utilize the outer pin of its PCB circuit substrate to be fixed in printed circuit board (PCB) in the surface mount mode, printed circuit board (PCB) 4 as shown in Figure 9 can be reserved an opening 41, and lens mount (Holder) 51 then can be located at outside the PCB circuit substrate of image sensor in the opening so the crystal grain of image sensor can be embedded.
In addition, the image sensor packaged glass can give plated film earlier in its previous operations, one side is plated the AR film, another side plating IR film, the height of lens group can increase light and run through rate and reduce the light reflection preventing that strong illumination from making the white mist of image, preventing ghost, thereby omit filters in the lens group 5 are set, so can reduce again, and then significantly reducing the printed circuit board (PCB) whole height, this has remarkable benefit for the application that improves subsequent product.
Because package method of the present invention can all have conductive layer (shown in Figure 10,11) in PCB circuit substrate both side surface, make this PCB circuit substrate carry out after the light shield etching (Etching) wherein a conductive layer window side form a plurality of in pin 111a, in each pin be electrically connected to another conductive layer the window side etching form a plurality of outside pin 111b, so can utilize double-layer printing circuit board in application facet.
Figure 12 shows that another image sensor package, mainly be to utilize package method of the present invention to change wherein step, after discrepancy is that crystal grain sensing area 21 peripheries of image sensor are coated with UV glue, 6 in glass is placed into and directly binds in the PCB circuit substrate window at grain surface, behind the peripheral filling UV of glass glue 61, carry out UV irradiation curing again and finish the gummed capping, this way can be omitted thickness of glass especially and take up space, and is applicable to the electronic product of mobile phone and so on.
Glass shown in Figure 13,14 is placed into equally and directly binds in the PCB circuit substrate window at grain surface, difference is that PCB circuit substrate both side surface all has conductive layer, wherein a conductive layer window side form a plurality of in pin 12a, 13a, pin is electrically connected to a plurality of outer pin 12b, the 13b that another conductive layer forms in the window side etching in each, and these two kinds of pattern image sensors can supply the position of sticking together of subsequent applications carry out different choice.
Claims (11)
1. an image sensor package method is characterized in that, may further comprise the steps:
At least one surface of one PCB circuit substrate has conductive layer, and it is offered a window is through to another correspondence from the surface of tool conductive layer surface, and the sensing area size of the specification of window and an image sensor is close, and is covered with veil around the wall edge of window;
This PCB circuit substrate is carried out the light shield etching make this conductive layer form a plurality of pins, pin and outer pin two positions in each pin comprises in window side;
Covering tool conductivity and connecting medium in the pin part in each at the PCB circuit substrate;
One image sensor crystal grain is being covered the electric connection media location with pin in its weld pad correspondence to be engaged to the PCB circuit substrate and to constitute electric connection with covering brilliant method;
Clean the image sensor grain surface with removing residues;
Around the crystal grain and and the PCB circuit substrate between slit filling glue material airtight so as to constituting;
Capping is glued together with a glass in corresponding image sensor crystal grain position.
2. image sensor package method according to claim 1 is characterized in that described glass is another the surperficial the window's position of PCB circuit substrate that is covered in corresponding crystal grain.
3. image sensor package method according to claim 1, the crystal grain induction zone that it is characterized in that described corresponding image sensor is with the capping of glass gummed.
4. according to claim 2 or 3 described image sensor package methods, it is characterized in that being covered with around the wall edge of described window the veil mode and comprise and coat welding resisting layer or gold-plated covering.
5. image sensor package method according to claim 4, it is characterized in that it is elargol that each interior pin of described PCB circuit substrate is covering tool conductivity connection medium, the mode of covering is with the coating of wire mark method, dotting glue method or needle-like tool transfer printing, toasts joint and put to continue after on the interior pin at image sensor crystal grain.
6. image sensor package method according to claim 4, it is characterized in that it is tin cream that each interior pin of described PCB circuit substrate is covering tool conductivity connection medium, the mode of covering be with the wire mark method apply, with dotting glue method or needle-like tool transfer printing, carry out the reflow joint and image sensor crystal grain places in, continue after on the pin.
7. according to claim 1,5 or 6 described image sensor package methods, it is characterized in that carrying out the light shield etching at this PCB circuit substrate makes this conductive layer after window side forms a plurality of pins, coats welding resisting layer at least between each pin.
8. image sensor package method according to claim 7, it is characterized in that around the described crystal grain and the PCB circuit substrate between slit filling glue material be a UV glue, the glass that is covered in the window's position is to go filling glue material with UV glue point glue rear seal-cover again at glass periphery, and UV glueds joint and continuously hardens with ultraviolet irradiation everywhere.
9. image sensor package method according to claim 8 is characterized in that utilizing a machine or SMT equipment that glass is covered in PCB circuit substrate the window's position.
10. image sensor package method according to claim 9 is characterized in that described glass gives plated film earlier, and one side is plated AR film another side plating IR film.
11. according to claim 1 or 10 described image sensor package methods, it is characterized in that described PCB circuit substrate both side surface all has conductive layer, make this PCB circuit substrate carry out after the light shield etching wherein a conductive layer window side form a plurality of in pin, in each pin be electrically connected to another conductive layer the window side etching form a plurality of outside pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031297544A CN1476065A (en) | 2003-05-15 | 2003-05-15 | Image sensor packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031297544A CN1476065A (en) | 2003-05-15 | 2003-05-15 | Image sensor packaging method |
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| Publication Number | Publication Date |
|---|---|
| CN1476065A true CN1476065A (en) | 2004-02-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031297544A Pending CN1476065A (en) | 2003-05-15 | 2003-05-15 | Image sensor packaging method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100359699C (en) * | 2004-12-30 | 2008-01-02 | 南亚电路板股份有限公司 | Method for manufacturing complementary metal oxide semiconductor image sensor |
| CN100438087C (en) * | 2005-05-08 | 2008-11-26 | 日月光半导体制造股份有限公司 | Photoelectric element packaging process |
| CN101221930B (en) * | 2007-01-10 | 2010-06-09 | 日月光半导体制造股份有限公司 | Chip packaging structure and packaging method thereof |
| CN102201376A (en) * | 2010-03-22 | 2011-09-28 | 精材科技股份有限公司 | Optical cover plate for packaging, image sensing element packaging body and manufacturing method thereof |
| CN103579277A (en) * | 2013-11-14 | 2014-02-12 | 华进半导体封装先导技术研发中心有限公司 | Packaging structure and method based on inverted imaging sensor chips |
| CN109873004A (en) * | 2019-03-01 | 2019-06-11 | 烟台睿创微纳技术股份有限公司 | A kind of infrared imaging detection element and preparation method thereof, a kind of infrared detecting set |
| CN112462234A (en) * | 2020-11-27 | 2021-03-09 | 日月光半导体（昆山）有限公司 | Integrated circuit testing method, computer readable medium and integrated circuit testing apparatus |
-
2003
- 2003-05-15 CN CNA031297544A patent/CN1476065A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100359699C (en) * | 2004-12-30 | 2008-01-02 | 南亚电路板股份有限公司 | Method for manufacturing complementary metal oxide semiconductor image sensor |
| CN100438087C (en) * | 2005-05-08 | 2008-11-26 | 日月光半导体制造股份有限公司 | Photoelectric element packaging process |
| CN101221930B (en) * | 2007-01-10 | 2010-06-09 | 日月光半导体制造股份有限公司 | Chip packaging structure and packaging method thereof |
| CN102201376A (en) * | 2010-03-22 | 2011-09-28 | 精材科技股份有限公司 | Optical cover plate for packaging, image sensing element packaging body and manufacturing method thereof |
| TWI495113B (en) * | 2010-03-22 | 2015-08-01 | Xintec Inc | Optical cover for packaging with improved solder mask structure, image sensing device package and manufacturing method thereof |
| CN102201376B (en) * | 2010-03-22 | 2015-10-14 | 精材科技股份有限公司 | Optical cover plate for packaging, image sensor packaging body and manufacturing method thereof |
| US9653500B2 (en) | 2010-03-22 | 2017-05-16 | Xintec Inc. | Optical cover plate with improved solder mask dam on glass for image sensor package and fabrication method thereof |
| CN103579277A (en) * | 2013-11-14 | 2014-02-12 | 华进半导体封装先导技术研发中心有限公司 | Packaging structure and method based on inverted imaging sensor chips |
| CN103579277B (en) * | 2013-11-14 | 2016-02-03 | 华进半导体封装先导技术研发中心有限公司 | Based on encapsulating structure and the method for packing of upside-down mounting image sensor chip |
| CN109873004A (en) * | 2019-03-01 | 2019-06-11 | 烟台睿创微纳技术股份有限公司 | A kind of infrared imaging detection element and preparation method thereof, a kind of infrared detecting set |
| CN112462234A (en) * | 2020-11-27 | 2021-03-09 | 日月光半导体（昆山）有限公司 | Integrated circuit testing method, computer readable medium and integrated circuit testing apparatus |
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