CN1378292A - High-efficiency encapsulation photoelectric element and encapsulation method thereof - Google Patents

Abstract

A high efficiency packaged optoelectronic device and a method for packaging the same. The invention provides a packaged photoelectric element for improving luminous efficiency and output power of the photoelectric element and a packaging method thereof, and provides the high-efficiency packaged photoelectric element which comprises a photoelectric element grain, a transparent material layer, a light reflection layer and a grain bearing seat, wherein the photoelectric element grain is provided with a first electrode and a second electrode which are electrically connected with the grain bearing seat and a conductive electrode with the other polarity, and the packaging method comprises the steps of forming the grain bearing seat, arranging the light reflection layer, forming the transparent material layer, fixing the photoelectric element grain and electrically connecting the first electrode and the second electrode of the photoelectric element grain with the grain bearing seat and the conductive electrode with the other polarity respectively.

Description

High-efficiency encapsulation photoelectric element and encapsulation method thereof

The invention belongs to a photoelectric element and a processing method thereof, in particular to a high-efficiency packaging photoelectric element and a packaging method thereof.

There are many types of light-emitting diodes and they are widely used. According to different packaging methods, it can be divided into Through-Hold LED, Surface-Mounted Device LED and Flip-Chip LED.

As shown in FIG. 1 , in a conventional package light-emitting diode including a crystal grain and a grain bearing seat 30, the grain is mainly formed by forming an epitaxial structure 10 on a substrate 20, and the area where the epitaxial structure 10 is located is at least It includes an N-type semiconductor region, an active layer and a P-type semiconductor layer. Due to the advancement of process technology, after the epitaxial structure 10 is completed, in order to increase the luminous brightness of the light-emitting diode, the substrate 20 is usually used as a transparent substrate, so that the light emitted by the light-emitting diode will not It is absorbed by the opaque substrate, and the crystal grains of the light-emitting diode can become the crystal grains that emit light from the front and back, so the luminous efficiency of the light-emitting diode can be increased.

As shown in Figure 1, the die bearing seat 30 of the light-emitting diode die usually uses a lead frame (LeadFrame), a printed circuit board (PC Board) or a metal seat (Header) as a carrier during packaging and is connected with the light-emitting diode The substrate 20 of the light-emitting diode crystal grain is connected to form the first electrode of the light-emitting diode grain, and the crystal-bonding surface 40 between the light-emitting diode grain and the grain bearing seat 30 is combined with silver glue, conductive glue or eutectic fixed on the die bearing seat 30 in a manner. The second electrode 50 on the LED die is additionally connected to the other end 35 of the lead frame. Finally, the LED die can connect the die bearing seat 30 and the lead frame 35 to a power source, so that the epitaxial structure 10 of the LED die emits light.

As shown in Figure 2, when the substrate 70 of the light-emitting diode crystal grain is an insulating material, the same as the above-mentioned method, the crystal-bonding surface 95 between the light-emitting diode crystal grain and the grain bearing seat 100 is fixed with silver glue on the die bearing seat 100 . The first electrode 80 and the second electrode 90 on the light emitting diode die are connected to the die carrier 100 and the lead frame 105 respectively. Finally, the light emitting diode die can be respectively connected to a power source through the die carrying seat 100 and the lead frame 105 , so that the epitaxial structure 60 of the light emitting diode die emits light.

However, since the light-emitting diode crystal grains are directly bonded to the grain bearing seat. It is known that the solid surface between the die and the die bearing seat will absorb the light generated by the light emitting diode die. Therefore, although the substrate on the light-emitting diode crystal grains has been replaced by a transparent substrate, most of the light emitted through the transparent substrate will be absorbed by the crystal bonding surface, thus reducing the luminous efficiency of the light-emitting diode. Moreover, the advantages of using the transparent substrate to make the light-emitting diode crystal grains produce light from the front and back sides cannot be fully utilized.

The object of the present invention is to provide a high-efficiency packaged photoelectric component and its packaging method that ensure the front and back sides of the photoelectric component to emit light, and improve the luminous efficiency and output power of the photoelectric component.

The high-efficiency package photoelectric element of the present invention includes photoelectric element crystals, a transparent material layer for fixing the photoelectric element crystal grains, a light reflection layer for changing incident light into reflected light, and a grain bearing seat; The seat and the lead frame are electrically connected to the first electrode and the second electrode.

The high-efficiency packaging photoelectric element packaging method of the present invention comprises the following steps:

Molded Die Carriers

set light reflection layer

A light reflection layer that changes the incident light into reflected light is arranged on the die bearing seat;

Formed layer of transparent material

Form a transparent material layer covering the light reflective layer;

Fixed photoelectric component die

  Fix the photoelectric element grains on the transparent material layer;

electrical connection

 Electrically connect the first pole and the second pole of the crystal grain of the photoelectric element to the grain bearing seat and the conductive electrode of the other polarity respectively.

in:

The die bearing seat is a plug-in lead frame.

The die carrier is a printed circuit board.

The die carrying seat is a metal seat.

The photoelectric element crystal grain at least includes a conductive transparent substrate and an epitaxial structure formed on the conductive transparent substrate; the first electrode and the second electrode are respectively located on the conductive transparent substrate and a plurality of different epitaxial layers in the epitaxial structure.

The transparent material layer is a conductive transparent material formed of indium tin oxide layer (ITO), zinc oxide layer (ZnO), cadmium tin oxide layer (CTO), indium zinc oxide layer (IZO) or nickel oxide layer (NiO) layer.

The optoelectronic element crystal grain at least includes an insulating transparent substrate and an epitaxial structure formed on the insulating transparent substrate; the first electrode and the second electrode are respectively located on a plurality of different epitaxial layers in the epitaxial structure.

The light reflective layer is convexly provided with hemispherical projections to prevent the reflected light from being reflected back into the crystal grains.

The light reflective layer is concavely provided with hemispherical recesses to prevent the reflected light from being reflected back into the crystal grains.

The light reflective layer is a grating structure for preventing reflected light from being reflected back into the crystal grain.

A high-efficiency packaging method for packaging photoelectric components, which includes the following steps:

  Molded Die Carrier

Form the first layer of transparent material layer

A first layer of transparent material is formed on the surface of the cavity of the die bearing seat;

  Set the light reflection layer

A light reflection layer that changes incident light into reflected light is set on the first transparent material layer;

Forming the second transparent material layer

forming a second layer of transparent material covering the light reflective layer;

  Fixed photoelectric component grain

  Fix the photoelectric element grains on the second transparent material layer;

electrical connection

The first pole and the second pole of the crystal grain of the optoelectronic element are electrically connected to the grain carrying seat and the conductive electrode of the other polarity respectively.

The molded die bearing seat is a plug-in lead frame.

The molded die bearing seat is a printed circuit board.

The molded die bearing seat is a metal seat.

The photoelectric element crystal grain fixed on the transparent material layer at least includes a conductive transparent substrate and an epitaxial structure formed on the conductive transparent substrate; the first electrode and the second electrode are respectively located in a plurality of phases in the conductive transparent substrate and the epitaxial structure. on the isoepitaxial layer.

The transparent material layer covering the light reflection layer is indium tin oxide layer (ITO), zinc oxide layer (ZnO), cadmium tin oxide layer (CTO), indium zinc oxide layer (IZO) or nickel oxide layer (NiO ) formed conductive transparent material layer.

The optoelectronic element crystal grain at least includes an insulating transparent substrate and an epitaxial structure formed on the insulating transparent substrate; the first electrode and the second electrode are respectively located on a plurality of different epitaxial layers in the epitaxial structure.

A hemispherical protrusion is provided on the light reflection layer arranged on the crystal grain carrying seat to prevent the reflected light from being reflected back into the crystal grain.

The light reflective layer arranged on the crystal grain carrying seat is recessed with a hemispherical recess to prevent the reflected light from being reflected back into the crystal grain.

The light reflective layer arranged on the die bearing seat is a grating structure for preventing the reflected light from being reflected back into the die.

Because the high-efficiency package optoelectronic element of the present invention comprises optoelectronic element grain crystal, the transparent material layer of fixing optoelectronic element grain, the light reflective layer that changes incident light into reflected light and grain bearing base; The optoelectronic element grain is provided with grain The bearing seat and the first and second electrodes electrically connected with another polarity conductive electrode; the packaging method includes molding the crystal grain bearing seat, setting a light reflection layer, forming a transparent material layer, fixing the photoelectric element crystal grain and placing the optoelectronic element grain The first pole and the second pole are respectively electrically connected to the crystal grain bearing seat and the conductive electrode of the other polarity. The high-efficiency packaging of the photoelectric element of the present invention is connected to the power supply, and the light produced by the crystal grain of the photoelectric element enters the light reflection layer through the transparent material layer to reflect all the light, so that the light generated by the photoelectric element will not be directly absorbed by the solid crystal surface , can ensure the luminous efficiency of the photoelectric element and greatly improve the output efficiency of the photoelectric element; ensure the front and back of the photoelectric element to emit light, improve the luminous efficiency and output power of the photoelectric element, thereby achieving the purpose of the present invention.

FIG. 1 is a schematic cross-sectional view of a conventional packaged light-emitting diode structure.

Fig. 2 is a schematic cross-sectional view of a conventional packaged light-emitting diode structure (the substrate is made of insulating material).

Fig. 3 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention.

Fig. 4 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the light reflection layer is placed in the conductive transparent material layer).

Fig. 5 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the light reflection layer is a grating structure).

Fig. 6 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the light reflection layer is a grating structure, and the light reflection layer is placed in a conductive transparent material layer).

Fig. 7 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the substrate is made of insulating material).

Fig. 8 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the substrate is made of insulating material, and the light reflection layer is placed in the conductive transparent material layer).

Fig. 9 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the light reflection layer is a grating structure, and the substrate is an insulating material).

Fig. 10 is a schematic cross-sectional view of the structure of the high-efficiency package photoelectric element of the present invention (the light reflection layer is a grating structure, the substrate is an insulating material, and the light reflection layer is placed in a conductive transparent material layer).

The present invention will be further elaborated below in conjunction with the accompanying drawings.

As shown in FIG. 3 , the high-efficiency packaged optoelectronic device of the present invention is a packaged light-emitting diode including a light-emitting diode grain and a grain carrier 130 .

The grain is mainly formed by forming the epitaxial structure 110 on the conductive transparent substrate 120 . The region where the epitaxial structure 110 is located includes at least an N-type semiconductor region, an active layer and a P-type semiconductor layer, on which a first electrode and a plurality of second electrodes 150 on different epitaxial layers located in the epitaxial structure 110 are disposed. The substrate 120 is a conductive transparent substrate.

The die carrier 130 is provided with a concave cavity 131, and a light reflection layer 145 with a high reflectance coefficient is plated on the surface with hemispherical protrusions 132, so as to change the incident light into reflected light.

Die carrying seat 130 cavity 131 is formed as indium tin oxide layer (ITO), zinc oxide layer (ZnO), cadmium tin oxide layer (CTO), indium zinc oxide layer (IZO) or nickel oxide layer (NiO ) conductive transparent material layer 140.

As shown in FIG. 4 , the light reflection layer 146 protruding in the form of hemispherical protrusions 133 may also be disposed in the conductive transparent material layer 140 .

The crystal grain is fixed on the conductive transparent material layer 140 in the cavity 131 of the crystal grain bearing seat 130 with its conductive transparent substrate 120, and the first electrode is electrically connected to the conductive transparent substrate 120, the conductive transparent material layer 140, and the crystal grain bearing base 130. The second electrode 150 is electrically connected to the lead frame 135 by wires.

The high-efficiency packaging of the photoelectric element in the present invention is connected to the power supply. After the light produced by the epitaxial structure 110 is emitted through the conductive transparent substrate 120, it passes through the conductive transparent material layer 140 and reaches the light reflection layer 145 (or 146) with a high reflection coefficient. All the light is reflected without being absorbed by the package; and when the light is reflected to the hemispherical protrusion 132 (or 133) protruding from the light reflection layer 145 (or 146), the light is reflected to different directions, The anti-reflective layer 145 (or 146) re-reflects the light generated by the epitaxial structure 110 to the active layer of the epitaxial structure 110, avoiding light re-absorption (Re-absorptionGrating), and ensuring the high-efficiency packaging of the photoelectric element of the present invention. efficiency.

The hemispherical protrusion 132 (or 133 ) on the light reflection layer 145 (or 146 ) is a structure that can reflect light diffusely. It can also be a concave cavity provided on the light reflection layer 145 (or 146 ); it can also be a grating structure or other structures that can diffusely reflect light.

As shown in Fig. 5 and Fig. 6, the light reflection layer 147 or 148 can also be designed as a grating (Grating) structure, and respectively located on the surface of the die bearing seat 130 or in the conductive transparent material layer 140, the same can be obtained with Same effect as above. In this way, the light will not be reflected to the active layer of the epitaxial structure 110 .

As shown in FIG. 7 , the high-efficiency packaged optoelectronic component of the present invention is a packaged light-emitting diode including light-emitting diode grains and a grain carrier 200 .

The crystal grain is mainly to form the epitaxial structure 160 on the insulating and transparent insulating substrate 170, and the area where the epitaxial structure 160 is located includes at least an N-type semiconductor region, an active layer and a P-type semiconductor layer, and there are respectively located on the epitaxial structure. The first electrode 180 and the second electrode 190 on the plurality of different epitaxial layers in 160 .

The die carrier 200 is provided with a concave cavity 201 , and a light reflective layer 215 with a high reflectance coefficient is plated on the surface with hemispherical protrusions 202 . As shown in FIG. 8 , the light reflection layer 216 protruding in the form of hemispherical protrusions 203 may also be disposed in the conductive transparent material layer 210 . To change the incident light into reflected light.

The hemispherical protrusion 202 protruding from the light reflection layer 215 is a structure capable of diffusely reflecting light. It can also be a recess provided on the light reflection layer 215 (or 216 ); it can also be a grating structure or other structures that can reflect light diffusely.

A transparent material layer 210 is formed in the cavity 201 of the die carrier 200 .

The crystal grain is fixed on the transparent material layer 210 in the cavity 201 of the grain bearing base 200 with its insulating transparent substrate 170, and the first electrode 180 and the second electrode 190 are respectively connected to the grain bearing base 200 and the lead frame 205 through wires. electrical connection.

The high-efficiency encapsulation of photoelectric components in the present invention is connected to the power supply. After the light produced by the epitaxial structure 160 is emitted through the transparent substrate 170, it passes through the transparent material layer 210 and reaches the light reflection layer 215 (or 216) with a high reflection coefficient, so that the light It is all reflected without being absorbed by the encapsulation; and when the light is reflected to the hemispherical protrusion 202 (or 203) protruding from the light reflection layer 215 (or 216), the light is reflected to different directions to prevent light The reflective layer 215 (or 216) reflects the light generated by the epitaxial structure 160 to the active layer of the epitaxial structure 160 again, avoiding light re-absorption (Re-absorption Grating), and ensuring the luminous efficiency of the high-efficiency package photoelectric element of the present invention .

As shown in Fig. 9 and Fig. 10, the light reflection layer 217 (or 218) can also be designed as a grating (Grating) structure, and respectively located on the surface of the die bearing seat 200 or in the transparent material layer 210, the same can be obtained Same effect as above. In this way, the light will not be reflected to the active layer of the epitaxial structure 160 .

The chip bearing seat can be a plug-in lead frame; it can also be a printed circuit board; it can also be a metal seat;

Since the active element of the high-efficiency packaging photoelectric element of the present invention is a light-emitting diode crystal grain, it is also applicable to all other active light-emitting elements and passive light-detecting elements, such as laser diodes and light-detecting diodes. The high-efficiency packaging photoelectric element of the invention can greatly increase the light receiving efficiency of the light detection element. Therefore, the high-efficiency package optoelectronic element die bearing seat of the present invention is a plug-in lead frame to form a plug-in package optoelectronic element, a surface-mounted optoelectronic element, and a chip-tapping optoelectronic element.

The packaging method of high-efficiency packaging photoelectric elements of the present invention comprises the following steps:

Molded Die Carriers

The die bearing seat with a concave concave cavity is formed by compression molding technology;

set light reflection layer

A light reflective layer with a high reflection coefficient is provided on the surface of the grain bearing seat to protrude into a hemispherical surface;

Formed layer of transparent material

Indium tin oxide layer (ITO), zinc oxide layer (ZnO), cadmium tin oxide layer (CTO), indium zinc oxide layer (IZO) or nickel oxide layer (NiO) covering is formed in the cavity of the die carrier a conductive transparent material layer on the light reflective layer;

A transparent material layer covering the light reflection layer can also be formed in the cavity of the die bearing seat;

It is also possible to form a first layer of conductive transparent or transparent material layer on the surface of the cavity of the crystal grain bearing seat; then set a light reflection layer on the first layer of conductive transparent or transparent material layer; then form a second layer covering the light reflection layer. A layer of conductive transparent or transparent material layer, so that the light reflection layer with a high reflection coefficient having a convex hemispherical surface is arranged in the conductive transparent material layer;

fixed substrate

Fix the conductive transparent substrate on the conductive transparent material layer; also fix the insulating transparent substrate on the transparent material layer;

set electrodes

Set up the first electrode and the second electrode on the epitaxial structure;

electrical connection

When the transparent substrate is a conductive transparent substrate, the first electrode on the epitaxial structure forms an electrical connection with the conductive transparent substrate, the conductive transparent material layer, and the grain bearing seat; when the transparent substrate is an insulating transparent substrate, the first electrode on the epitaxial structure The electrodes are electrically connected to the grain bearing seat by wires; the second electrode on the epitaxial structure is electrically connected to the lead frame by wires, and the packaging of the high-efficiency photoelectric components for packaging light-emitting diodes is completed in the present invention.

The present invention has the following advantages:

1. In the present invention, a layer of transparent material is added between the die bearing seat and the photoelectric element, so that the light generated by the photoelectric element will not be directly absorbed by the crystal bonding surface, and the purpose of greatly improving the output efficiency of the element is achieved. At the same time, when applied to passive elements, especially photodetection elements, the high-efficiency packaging photoelectric element and packaging method of the present invention can increase the effective light-receiving area of the light detection element to achieve the purpose of improving the performance of the element.

2. In the present invention, a light reflection layer is coated on the surface of the grain bearing seat, and the light generated by the photoelectric element will not be reflected back to the active layer again through the specially designed shape of the light reflection layer, effectively preventing the photoelectric element from emitting light The disadvantage of low efficiency. When applied to a passive element, especially a light detection element, the light receiving efficiency of the light detection element can be improved, and the sensitivity and accuracy of the light detection element can be effectively increased.

3. The present invention can greatly increase the optical path, path and solid angle of light emitting or receiving light in the photoelectric element, so as to greatly improve the output efficiency of the photoelectric element.

Claims (30)

1, a kind of high efficiency packaged photoelectronic element, it comprises photoelectric cell grain crystalline substance and crystal grain load bearing seat; Photoelectric cell crystal grain is provided with first electrode and second electrode that electrically connects with crystal grain load bearing seat and lead frame; It is characterized in that described crystal grain load bearing seat and photoelectric cell intergranule are provided with the transparent material layer of fixed light electric device crystal grain and incident light is changed into catoptrical reflection layer.

2, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described crystal grain load bearing seat is the plug-in type lead frame.

3, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described crystal grain load bearing seat is a printed circuit board (PCB).

4, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described crystal grain load bearing seat is a metal pedestal.

5, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described photoelectric cell crystal grain comprises the conductive, transparent substrate at least and is formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.

6, high efficiency packaged photoelectronic element according to claim 1 is characterized in that the conductive transparent material layer of described transparent material layer for forming with indium tin oxide layer, zinc oxide film, cadmium tin oxide layer, indium-zinc oxide layer or nickel oxide layer.

7, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.

8, high efficiency packaged photoelectronic element according to claim 1 is characterized in that being convexly equipped with on the described reflection layer and avoids the intragranular hemisphere face projection that is of reverberation reflected back.

9, high efficiency packaged photoelectronic element according to claim 1 is characterized in that being arranged with on the described reflection layer and avoids the intragranular hemisphere face depression that is of reverberation reflected back.

10, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described reflection layer is for avoiding the intragranular optical grating construction of reverberation reflected back.

11, a kind of high efficiency packaged photoelectronic element method for packing is characterized in that it comprises the following steps:

Moulding crystal grain load bearing seat

Reflection layer is set

Be provided with in the crystal grain load bearing seat incident light is changed into catoptrical reflection layer;

The shaping transparent material layer

Formation is covered in the transparent material layer of reflection layer;

Fixed light electric device crystal grain

Photoelectric cell crystal grain is fixed on the transparent material layer;

Electrically connect

First utmost point of photoelectric cell crystal grain and second utmost point are electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.

12, high efficiency packaged photoelectronic element method for packing according to claim 11, the crystal grain load bearing seat that it is characterized in that described moulding is the plug-in type lead frame.

13, high efficiency packaged photoelectronic element method for packing according to claim 11, the crystal grain load bearing seat that it is characterized in that described moulding is a printed circuit board (PCB).

14, high efficiency packaged photoelectronic element method for packing according to claim 11, the crystal grain load bearing seat that it is characterized in that described moulding is a metal pedestal.

15, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that describedly being fixed in photoelectric cell crystal grain on the transparent material layer and comprising the conductive, transparent substrate at least and be formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.

16, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that the described conductive transparent material layer of transparent material layer for forming with indium tin oxide layer, zinc oxide film, cadmium tin oxide layer, indium-zinc oxide layer or nickel oxide layer that is covered in reflection layer.

17, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that described photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.

18, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that being convexly equipped with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face projection that is of reverberation reflected back.

19, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that being arranged with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face depression that is of reverberation reflected back.

20, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that describedly being arranged at reflection layer on the crystal grain load bearing seat for avoiding the intragranular optical grating construction of reverberation reflected back.

21, a kind of high efficiency packaged photoelectronic element method for packing is characterized in that it comprises the following steps:

Moulding crystal grain load bearing seat

Shaping ground floor transparent material layer

Form the ground floor transparent material layer in crystal grain load bearing seat depression surface;

Reflection layer is set

On the ground floor transparent material layer, be provided with incident light is changed into catoptrical reflection layer;

Shaping second layer transparent material layer

Formation is covered in the second layer transparent material layer on the reflection layer;

Fixed light electric device crystal grain

Photoelectric cell crystal grain is fixed on the second layer transparent material layer;

Electrically connect

First utmost point of photoelectric cell crystal grain and second utmost point are electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.

22, high efficiency packaged photoelectronic element method for packing according to claim 21, the crystal grain load bearing seat that it is characterized in that described moulding is the plug-in type lead frame.

23, high efficiency packaged photoelectronic element method for packing according to claim 21, the crystal grain load bearing seat that it is characterized in that described moulding is a printed circuit board (PCB).

24, high efficiency packaged photoelectronic element method for packing according to claim 21, the crystal grain load bearing seat that it is characterized in that described moulding is a metal pedestal.

25, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that describedly being fixed in photoelectric cell crystal grain on the transparent material layer and comprising the conductive, transparent substrate at least and be formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.

26, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that the described conductive transparent material layer of transparent material layer for forming with indium tin oxide layer, zinc oxide film, cadmium tin oxide layer, indium-zinc oxide layer or nickel oxide layer that is covered in reflection layer.

27, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that described photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.

28, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that being convexly equipped with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face projection that is of reverberation reflected back.

29, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that being arranged with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face depression that is of reverberation reflected back.

30, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that describedly being arranged at reflection layer on the crystal grain load bearing seat for avoiding the intragranular optical grating construction of reverberation reflected back.

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