CN1285967C - A Method of Correcting the Characteristic Pattern of Polygonal Mask Using Optical Proximity Effect - Google Patents

Abstract

The invention provides a mask pattern block mode, and the mask characteristic pattern with internal angle polygons is corrected without using additional decorative lines, so that the characteristic pattern with at least one internal angle can be effectively corrected by an optical proximity effect without increasing any additional data points. Therefore, the conventional method of using the decoration line as the optical proximity effect correction can be replaced, and further, the effective optical proximity effect correction can be obtained. In addition, for a regular mask writing unit, when an uncorrected mask feature pattern is divided into a plurality of mask writing units having a rectangular or trapezoid shape, the mask writing time can be improved, and no inner angle exists in the divided mask writing units. In addition, when a simple geometry is used, pattern inspection can be simplified and the correction step is made easier.

Description

A Method of Correcting the Characteristic Pattern of Polygonal Mask Using Optical Proximity Effect

(1) Technical field

The present invention relates to a method for correcting a mask pattern by optical proximity, in particular to a method for correcting optical proximity effect of a polygonal mask feature pattern with an inner corner.

(2) Background technology

Miniaturized integrated circuits (IC, integrated circuits) minimum feature size (feature size) has been carried out for many years. As feature sizes shrink, different process constraints make integrated circuits more difficult to fabricate. Among them, one process is limited to photolithography.

An important component of optical lithography is a photomask, which contains a pattern based on the pattern features of the integrated circuit design. These masks typically comprise a transparent glass plate covered with a pattern transfer bright block material such as Cr (chromium).

For high-end chips, the complexity of the pattern design and the file size of the mask will increase rapidly. For example, for a file size of 50 Giga Bytes, mask writing takes two days. Therefore, how to reduce the file size is an important issue. In the traditional optical proximity correction (OPC, optical proximity correction) theory, the inner corner pattern is corrected by using an extra decorative line (extraserif). For a single inner corner, the number of data points may be increased from one to five. In summary, using extra trims increases output file size and rapidly increases mask write time, since trims typically require sub-resolution dots. As a result, the size of the data point written increases and the write speed becomes slower.

Figures 1A to 3C show the optical proximity of traditional L-shaped (L-shaped), T-shaped (T-shaped) and crossed-shaped (crossed-shaped) mask feature patterns using extra serif Effect correction method, and use extra data point (extra data point) and mask writing unit (maskwriting unit) to correct these optical proximity effect correction feature patterns. FIG. 1A to FIG. 1C show a mask pattern corresponding to an integrated circuit pattern. FIG. 1A shows an unmodified L-shaped mask feature pattern 10 . In order to avoid the inner corners of the L-shaped mask feature pattern, the uncorrected L-shaped mask feature pattern 10 is corrected by trim lines to form a modified L-shaped mask feature pattern 10a, and the modified L-shaped mask pattern has a A single inner corner 14, as shown in Figure 1B. Therefore, the number of additional data points and the size of the file capacity will increase after the correction. There is only one data point 12A in the unmodified L-shaped mask feature pattern 10 , however, the corrected feature pattern 10 a formed after correction has four additional data points 12B, 12C, 12D and 12E. Therefore, the capacity of computer data processing and file size will increase with the increase of the number of data points. Referring to FIG. 1C , the modified L-shaped reticle feature pattern is divided into five rectangular feature patterns 16 a to 16 e such that two additional reticle writing units are generated after the reticle dividing step.

Next, FIG. 2A shows an unmodified T-shaped mask feature pattern 20 with two data points 22A and 22B. The correction steps are the same as those shown in FIGS. 1A to 1C . The modified T-shaped (T-shaped) mask feature pattern 20a formed after trimming has two inner corners 24a and 24b , as shown in FIG. 2B . In FIG. 2C , eight additional data points 22C to 22J are generated after correction, and seven additional mask units 26a to 26h are generated after the mask is divided. Next, referring to FIG. 3A , this figure shows an uncorrected crossed-shaped mask feature pattern 30 having four data points 32A to 32D. As described above, after the trim line optical proximity correction, the corrected staggered mask feature pattern 30a has four inner corners 34a-34d and generates sixteen additional data points 32E-32T. Therefore, the increase in output file size and mask write time is due to the addition of new data points for trim lines.

Next, FIG. 4 is a contour image showing the uncorrected zigzag mask feature pattern 30 . The range surrounded by the solid line is the original unmodified staggered mask feature pattern 30. After the exposure step, there is a simulated pattern formed by dotted lines on the uncorrected staggered mask feature pattern 30. A simulation area image (simulation area image) 40, and the extent of the image 40 is smaller than the unmodified staggered mask feature pattern 30. But the simulated area image 40 has four corners 42a, 42b, 42c and 42d, and further these inner corners can cause problems in pattern inspection. In addition, in order to solve various problems caused by inner corners, the conventional technique is to modify the traditional staggered mask feature pattern 30 by using trim lines. As shown in FIG. 3B , after the exposure step, the size of the simulated area image 40 a is close to that of the zigzag mask feature pattern 30 a after trimming correction, as shown in FIG. 5 . In FIG. 5 , even though the area size of the simulated region image 40 a is close to that of the modified interlaced mask feature 30 a , the simulated region image 40 a has inner corners and still increases the mask loading time and mask writing time.

In view of the above-mentioned disadvantages caused by the traditional optical proximity correction in the background of the invention, the present invention provides a method of optical proximity correction (OPC, optical proximity correction) that does not require the use of additional decorative lines (serif) to correct the inner angle. The polygonal mask feature pattern, and the smallest mask file capacity size can be obtained, and the regularity can be improved by accurately correcting the mask feature pattern with inner corners. The mask writing unit is a rectangular writing unit with several (or Trapezoid) and shorten mask pattern inspection time.

(3) Contents of the invention

The main purpose of the present invention is to obtain the highest resolution mask pattern size using an optical proximity correction method without using additional trim lines.

Another object of the present invention is to provide an effective optical proximity effect correction method to reduce the output file size of the optical proximity effect correction.

Another object of the present invention is to provide a method for correcting optical proximity effect to form several rectangular or trapezoidal mask writing units for polygonal mask feature patterns, so as to improve mask writing time.

Another object of the present invention is to provide a method for correcting optical proximity effect, which can improve the uniformity of the mask and reduce the pattern inspection time.

According to an aspect of the present invention, a method for correcting by using the optical proximity effect is characterized in that it includes: providing a first characteristic pattern with a first inner angle, the first inner angle is composed of two inner corners constituting the first characteristic pattern The sides intersect to form: dividing the first characteristic pattern with the first inner angle to form at least two separated characteristic patterns, and the first inner angle is not included between the two separated characteristic patterns.

A method for correcting the optical proximity effect according to another aspect of the present invention is characterized in that it includes: providing a first characteristic pattern with a first inner angle, the first inner angle is composed of two inner corners constituting the first characteristic pattern Intersecting sides; dividing the first characteristic pattern with the first inner angle to form a second characteristic pattern and a third characteristic pattern, and the first characteristic pattern and the third characteristic pattern are not included between the second characteristic pattern and the third characteristic pattern inner corner.

An optical proximity correction method according to another aspect of the present invention is characterized in that it includes: providing a first characteristic pattern, the first inner angle is formed by the intersection of two inner sides constituting the first characteristic pattern, wherein the The number of interior angles of the first characteristic pattern is determined by a combination of a first interior angle and a second interior angle, a third interior angle, and a fourth interior angle adjacent to the first interior angle; dividing the first characteristic pattern, wherein, dividing the The number of characteristic patterns of the first characteristic pattern is determined by a combination of a second characteristic pattern, a third characteristic pattern, a fourth characteristic pattern and a fifth characteristic pattern, wherein the second characteristic pattern, the third characteristic pattern, The number of interior angles not included between the fourth characteristic pattern and the fifth characteristic pattern is determined by the combination of the first interior angle, the second interior angle, the third interior angle and the fourth interior angle.

The present invention provides a method of mask pattern blocks without using additional decorative lines to modify the feature pattern of the mask. Correcting the polygonal mask feature pattern with at least one inner corner (Inner corner) will not increase any additional data points and mask writing units. Therefore, it can replace the traditional way of using decorative lines as optical proximity effect correction, and obtain effective optical proximity effect correction. In addition, for regular mask writing, mask writing time can be improved when the unmodified polygonal mask feature pattern is divided into several rectangular or trapezoidal mask writing units. Furthermore, when simple geometric figures are used, each rectangular mask writing unit or trapezoidal mask writing unit after division has no inner corners, which can simplify the pattern inspection time and make mask correction easier A step of.

In order to further illustrate the purpose, structural features and effects of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings.

(4) Description of drawings

FIG. 1A to FIG. 1C are schematic structural diagrams of each step when using traditional technology to correct a characteristic pattern of an L-shaped mask by using the traditional optical proximity effect;

FIG. 2A to FIG. 2C are schematic structural diagrams of various steps when using traditional technology to correct a characteristic pattern of a T-shaped mask by using the traditional optical proximity effect;

3A to FIG. 3C are schematic structural diagrams of each step when using traditional technology to correct a feature pattern of an interlaced mask using the traditional optical proximity effect;

4 is a top view of a structural pattern of an interlaced mask feature pattern using conventional technology;

5 is a top view of a structural image of a zigzag mask feature pattern after trim line correction using conventional techniques;

6A to 6D are top views of the steps of dividing a polygonal mask feature pattern to form a plurality of feature patterns according to the technology disclosed in the present invention;

7A to 7D are top views of the steps of dividing an L-shaped mask feature pattern to form two divided feature pixels according to the technology disclosed in the present invention;

8A-8B are top views of the steps of dividing a T-shaped mask feature to form two divided features according to the techniques disclosed in the present invention;

9A-9B are top views of steps of dividing a staggered mask feature to form three divided features according to the techniques disclosed herein;

10 is a top view of a structural pattern of a staggered mask feature pattern according to the technology disclosed in the present invention;

11A to 11B are top views of the steps of dividing an L-shaped mask feature pattern in different ways to form three divided feature patterns according to the technology disclosed in the present invention;

12A to FIG. 12B are top views of the steps of dividing a T-shaped mask feature pattern in different ways to form three divided feature patterns according to the technology disclosed in the present invention;

13A-13B are different methods of dividing a zigzag mask feature pattern according to the technology disclosed in the present invention.

14 is a top view of an image of a staggered mask feature pattern structure according to the present invention.

(5) specific implementation

Some embodiments of the present invention will be described in detail as follows. However, the invention may be practiced broadly in other embodiments than those described in detail, and the scope of the invention is not limited except as defined by the appended claims.

The method of the present invention is a method for modifying the feature pattern of the mask by using an optical proximity effect without adding decorative lines as pattern sections. Effective correction of the optical proximity effect can be obtained for a mask feature pattern with at least one corner (corner) without generating additional data points, and there is no interior corner in each feature pattern segmented after the correction of the optical proximity effect, The time for pattern inspection can be reduced, and the file capacity can be further greatly reduced. Here, the mask feature pattern can be a polygon mask feature pattern. Therefore, the optical proximity effect correction of the traditional decorative lines is replaced by pattern blocks to achieve effective optical proximity effect correction. In addition, the writing time of the mask is also greatly improved because the original feature pattern is divided into several blocks of rectangular or trapezoidal writing units. At the same time, when using simple geometries, the inspection time and correction of mask feature patterns are simpler and easier than using complex trim line correction methods.

Referring to FIG. 6A , there is shown a polygonal feature pattern 60 having three data points 62A, 62B and 62C and at least three interior angles. In the method of the present invention, a method for dividing the mask feature pattern without using the optical proximity effect correction of decorative lines is provided, and the polygon mask feature pattern 60 is divided into several trapezoidal or rectangular feature patterns. As shown in FIG. 6B, this figure shows that after the segmentation step, the polygonal characteristic pattern 60 is divided into several rectangular or trapezoidal writing units 60a to 60e, and eleven additional units are added after the polygonal characteristic pattern 60 is divided. Data points 62D to 62N, even if the number of data points increases, the trapezoidal or rectangular feature pattern formed after segmentation is faster than the original polygonal mask. Feature pattern inspection time and mask loading after correction of decorative line optical proximity effect (mask loading) less time to come. In addition, FIG. 6C is another polygonal characteristic pattern 64 with at least three interior angles and three data points 66A, 66B and 66C. According to the method described above, the polygonal characteristic pattern 64 with three interior angles is divided into Three rectangular or irregular feature patterns 64a, 64b and 64c, and four data points 66D, 66E, 66F and 66G are added after division. Similarly, after the characteristic pattern 64 is modified, the original characteristic pattern figure 64 is simplified into simpler characteristic pattern shapes (64a, 64b and 64c) (compared with the polygonal characteristic pattern 64 modified by the decorative line optical proximity effect), and There are no three inner corners of the original feature pattern 64 in each of the divided feature patterns 64 a , 64 b and 64 c , as shown in FIG. 6D , so that the time for pattern inspection can be greatly reduced. Here, the included angle of the polygon proposed in the embodiment of the present invention includes greater than 0 degrees and less than 180 degrees.

Furthermore, in a preferred embodiment of the present invention a method of calculating the optimal distance for segmentation between two separated blocks is proposed. Here, an L-shaped characteristic pattern with an inner angle is used as an illustration for calculating the interval width between each divided characteristic pattern. After optical proximity effect correction, the L-shaped characteristic pattern is divided into at least two or three characteristic patterns, and the distance between two adjacent divided characteristic patterns is corrected as the interval width D. The wavelength of the light source is corrected by Latin λ, and the interval width can be calculated by the formula D=λ/n, where n is the interval between two adjacent divided characteristic patterns, and its value is between 1.2 and 8 . According to this method, the optimal distance between the two individual characteristic patterns after segmentation can be quickly calculated, and the most suitable optical proximity effect corrected reticle characteristic pattern can be obtained.

In the first preferred embodiment of the present invention, it is to provide a polygonal characteristic pattern divided into several trapezoidal or rectangular characteristic patterns, so that the internal angles generated by the traditional decorative line method can be corrected. In addition to the fact that the effect problem does not exist, the generation of data points can also be reduced so that the capacity of the file output can be reduced. FIG. 7A to FIG. 9B are plan views showing steps in dividing the polygonal characteristic pattern. 7A-7D show an L-shaped mask feature pattern, FIGS. 8A-8B show a T-shaped mask feature pattern, and FIGS. 9A-9B show a cross-shaped mask feature pattern. In the present invention, a transparent plate is provided as a photomask, and its material is usually quartz. Next, an opaque pattern is formed on the photomask. The opaque pattern can be chromium (Cr), phase shift mask (PSM, phase shift mask) or half tone (half tone). During the lithography step, the opaque pattern is is projected onto the spin-coated photoresist layer on the wafer surface. In an embodiment of the present invention, the pattern of the opaque pattern includes L-shaped, T-shaped, and staggered-shaped characteristic patterns, as well as polygonal mask characteristic patterns with inner angles greater than 0 and less than 180 degrees.

In FIG. 1A, there is an unmodified L-shaped mask feature pattern 10 with a number of data points 12A. In order to reduce the mask loading time and feature pattern inspection time, the present invention proposes a method that does not need to use additional decorative lines. In the optical proximity effect correction method, the uncorrected mask feature pattern 10 is divided to form two rectangular feature patterns 70 a and 70 b, as shown in FIG. 7A .

After the division step, the number of additional data points is increased by two points 72B and 72C, and there is no additional mask write unit increase, as shown in FIG. 7B. In addition, as shown in FIG. 7C and FIG. 7D, the irregular L-Tong mask feature pattern 10 forms two trapezoidal feature patterns after the division step. The advantage of this division method is that the generated additional data points are relatively small. The traditional method of using decorative lines as a correction method is less, so that the file size is greatly reduced, and there will be no inner corners between the individual feature patterns after separation, and it can also reduce the mask loading and mask writing time. .

Next, referring to FIG. 8A , this figure is divided into two rectangular mask feature patterns 80 a and 80 b according to the traditional T-shaped mask feature pattern 20 in FIG. 2A . Here, only the characteristic pattern of a rectangular mask is used as an example for illustration, and other patterns are the same as those shown in FIG. 7C and FIG. 7D , so no more details will be given here and below in the examples described below. After the segmentation step, two rectangular mask feature patterns are produced, but there is no increase in the number of data points in each rectangular mask feature pattern, there are only two data point numbers 22A and 22B in FIG. 2A, and only two data point numbers 22A and 22B in FIG. Two data point numbers 82A and 82B. In addition, FIG. 8B also shows that there is no increase in the writing unit of the outer mask.

Similarly, according to the conventional unmodified staggered mask feature pattern 30 of FIG. 3A , the feature pattern 30 is divided into three rectangular patterns 90 a , 90 b and 90 c by using the method of the present invention, as shown in FIG. 9A . There are four interior corners and four data points 32A-32D in the original unmodified staggered mask feature pattern 30 . After the division step, there is no additional data point increase in the three separate rectangular patterns, and there are still four data point numbers 92A to 92D. Similarly, there is no additional mask writing in FIG. 9B. Income units increase.

Next, FIG. 10 shows a structure image 100 on a zigzag feature pattern 30 . The range surrounded by the solid line in the figure is the uncorrected staggered mask feature pattern 30, after the exposure step, a simulation formed after the simulation is formed on the uncorrected staggered mask feature pattern 30 The area image (simulation area image) 100 (the part formed by the dotted line in the figure), the scope of the simulation area image 100 is smaller than the original staggered mask feature pattern 30. Furthermore, the structural image 100 is indicative of a similar interior angle correction effect.

According to the above description, in the first preferred embodiment of the present invention, a polygonal mask feature pattern is proposed to be divided into several rectangular or trapezoidal mask feature patterns, so that the original mask feature pattern The inner corner effect is reduced, and there are no inner corners in each feature pattern after segmentation. In addition, when the decorative line is used to correct the mask feature pattern, the number of additional data points generated is reduced, and the file capacity is also greatly reduced.

In the second preferred embodiment of the present invention, another method for segmenting the polygonal mask pattern is proposed, which can also obtain more effective optical proximity effect correction. 11A to 13B show different mask pattern division methods. Similarly, L-shape (FIG. 11A-FIG. 11B), T-shape (FIG. 12A-FIG. 12B) and staggered mask pattern ( FIG. 13A to FIG. 13B ) three kinds of mask patterns as examples.

Similarly, the traditional unmodified L-shaped mask feature pattern 10 in FIG. 1A is divided into three divided feature patterns 110a, 110b and 110c, as shown in FIG. 11A. shown, and there are no interior angles in each segmented feature pattern. And six data points 112B to 112G are generated after division. In addition, FIG. 11B also shows that no additional mask writing unit is generated. In addition, the features formed on the wafer after exposure approximate the original uncorrected features.

Similar to the steps in FIG. 11A to FIG. 11B , the segmentation step is performed on the original unmodified T-shaped mask feature pattern 20, so that the T-shaped mask feature pattern 20 is divided into three rectangular segmented feature patterns 120a, 120b, and 120c, As shown in Figure 12A. At the same time, as shown in FIG. 12B , after the division step, no additional mask writing units are formed, and there are no inner corners in each feature pattern after division.

Next, referring to FIG. 3A , an unmodified staggered mask feature pattern 30 has four data points 32A to 32D. After the segmentation step, the original staggered mask feature pattern 30 is segmented into five rectangular blocks 130a-130e, and eight additional data points 132E-132L are added, as shown in FIG. 13A. In addition, as shown in FIG. 13B, there are no additional mask writing units added, nor are there interior corners in the individual features that are separated.

Referring to FIG. 14, this figure is an image showing the structure of a zigzag mask feature pattern. In the figure, the range of the staggered mask feature pattern formed by the solid line is the original uncorrected staggered mask feature pattern 30. After the exposure step, a simulation is formed on the uncorrected staggered mask feature pattern 30. The area image 140 (the area formed by the dotted line), the size of the simulated area image is more similar to the original staggered mask feature pattern 30 . Therefore, the characteristic pattern formed by the structural image is indicative of a similar interior angle correction effect.

Even in the second preferred embodiment, the additional data point count and file size are much higher than in the first preferred embodiment, and cause reticle writing time, reticle loading time, and feature inspection time Increase. However, according to the second method of dividing the feature pattern of the mask, more effective correction of the optical proximity effect can be obtained. Similarly, there is no internal angle in each feature pattern after segmentation.

According to the conclusions described above, the present invention proposes to change the method of segmenting the polygonal mask feature pattern with internal angles to generate several rectangular or trapezoidal segmented feature patterns, so that there will be no additional data points and additional light. Mask writing unit, less than the traditional decorative line method and after the exposure step, there are no interior corners in the segmented pattern. In addition, the file size is also greatly reduced due to the reduction of the number of data points. At the same time, due to the mask writing time, loading time and pattern required for the rectangular or trapezoidal mask feature pattern formed after division Inspection time can be reduced immediately.

Of course, those of ordinary skill in the art should recognize that the above embodiments are only used to illustrate the present invention, rather than as a limitation to the present invention, as long as within the scope of the spirit of the present invention, the implementation of the above Changes and modifications of the examples will fall within the scope of the claims of the present invention.

Claims (18)

1. a method of utilizing the optical proximity effect correction is characterized in that, comprising:

One first characteristic pattern with one first interior angle is provided, and this first interior angle is to intersect institute by the two inboard sides that constitute this first characteristic pattern to constitute;

Cut apart this this first characteristic pattern to form at least two characteristic patterns that separate, do not have this first interior angle in these two characteristic patterns that separate with first interior angle.

2. the method for claim 1, it is characterized in that the interval width between these two characteristic patterns that separate can calculate according to formula D=λ/n, wherein, going into is a light source irradiation wavelength, and n is the spacing between these two each characteristic patterns of cutting apart.

3. method as claimed in claim 2 is characterized in that, the numerical value of this spacing between described two these characteristic patterns that separate is between 1.2 to 8.

4. the method for claim 1 is characterized in that, also comprises cutting apart this this first characteristic pattern with first interior angle with at least three characteristic patterns that separate of formation, and does not comprise this first interior angle in these three characteristic patterns that separate.

5. the method for claim 1 is characterized in that, described first characteristic pattern comprises one second interior angle adjacent to this first interior angle, and does not have this first interior angle and this second interior angle in these two characteristic patterns that separate.

6. method as claimed in claim 5 is characterized in that, also comprises cutting apart this first characteristic pattern with at least three characteristic patterns that separate of formation, and does not have this first interior angle and this second interior angle in these three characteristic patterns that separate.

7. method as claimed in claim 6 is characterized in that, described first characteristic pattern comprises one the 3rd interior angle adjacent to this second interior angle, and does not have this first interior angle, this second interior angle and the 3rd interior angle in these three characteristic patterns that separate.

8. method as claimed in claim 7, it is characterized in that, described first characteristic pattern comprises one the 4th interior angle adjacent to the 3rd interior angle, does not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in these three characteristic patterns that separate.

9. method as claimed in claim 8, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in these five characteristic patterns that separate to form at least five characteristic patterns that separate.

10. the method for an optical proximity effect correction is characterized in that, comprising:

One first characteristic pattern with one first interior angle is provided, and this first interior angle is to intersect institute by the two inboard sides that constitute this first characteristic pattern to constitute;

Cut apart this this first characteristic pattern to form one second characteristic pattern and one the 3rd characteristic pattern, do not have this first interior angle in this second characteristic pattern and the 3rd characteristic pattern with this first interior angle.

11. method as claimed in claim 10 is characterized in that, also comprises cutting apart this first characteristic pattern to form one the 4th characteristic pattern, does not have this first interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 4th characteristic pattern.

12. method as claimed in claim 10 is characterized in that, described first characteristic pattern comprises one second interior angle adjacent to this first interior angle, does not have this first interior angle and this second interior angle in this second characteristic pattern and the 3rd characteristic pattern.

13. method as claimed in claim 12, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle and this second interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 5th characteristic pattern to form one the 5th characteristic pattern.

14. method as claimed in claim 13, it is characterized in that, described first characteristic pattern comprises one the 3rd interior angle adjacent to this first interior angle, does not have this first interior angle, this second interior angle and the 3rd interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 5th characteristic pattern.

15. method as claimed in claim 14, it is characterized in that, described first characteristic pattern comprises one the 4th interior angle adjacent to the 3rd interior angle, does not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 5th characteristic pattern.

16. method as claimed in claim 15, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in this second characteristic pattern, the 3rd characteristic pattern, the 5th characteristic pattern, the 6th characteristic pattern and the 7th characteristic pattern to form one the 6th characteristic pattern and one the 7th characteristic pattern.

17. an optical adjacent correction method is characterized in that, comprising:

One first characteristic pattern is provided, wherein, the interior angle number of this first characteristic pattern is to determine by one first interior angle and adjacent to one second interior angle, one the 3rd interior angle and the combination of one the 4th interior angle of this first interior angle, and wherein this first interior angle is to intersect institute by the two inboard sides that constitute this first characteristic pattern to constitute;

Cut apart this first characteristic pattern, wherein, separately the characteristic pattern number of this first characteristic pattern is to be determined by one second characteristic pattern, one the 3rd characteristic pattern, one the 4th characteristic pattern and the combination of one the 5th characteristic pattern, wherein, not having this interior angle number in this second characteristic pattern, the 3rd characteristic pattern, the 4th characteristic pattern and the 5th characteristic pattern is to be determined by this first interior angle, this second interior angle, the 3rd interior angle and the combination of the 4th interior angle.

18. method as claimed in claim 17, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in this second characteristic pattern, the 3rd characteristic pattern, the 5th characteristic pattern, the 6th characteristic pattern and the 7th characteristic pattern to form the 6th characteristic pattern and one the 7th characteristic pattern.

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