CN1283409C - Brittle material substrate chamfering method and chamfering device - Google Patents
Brittle material substrate chamfering method and chamfering device Download PDFInfo
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- CN1283409C CN1283409C CNB02804763XA CN02804763A CN1283409C CN 1283409 C CN1283409 C CN 1283409C CN B02804763X A CNB02804763X A CN B02804763XA CN 02804763 A CN02804763 A CN 02804763A CN 1283409 C CN1283409 C CN 1283409C
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- seamed edge
- aforementioned
- material substrate
- fragile material
- chamfering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
- C03B29/06—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
- C03B29/08—Glass sheets
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
- C03B29/025—Glass sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/02—Annealing glass products in a discontinuous way
- C03B25/025—Glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
A first laser spot (LS1) in elliptic shape having one end positioned on an edge (51) to be chamfered included in the side edges of a glass substrate (50). The major axis of the first laser spot (LS1) is inclined by an angle [theta] with respect to the edge, and the other end is positioned on the portion in vicinity of the edge (51). The heat energy intensity of the first laser spot (LS1) is low at the end positioned on the portion in the vicinity of the edge (51) and highest at the end positioned on the edge (51) to be chamfered. When the glass substrate (50) is moved in the X-direction, the first laser spot (LS1), after preheating the portion of the glass substrate (50) in the vicinity of the edge (51), melts and chamfers the edge (51). Further, after the edge (51) has been melted and chamfered, the substrate is heated by a second laser spot and then annealed, thereby making it possible to mitigate the residual stress and prevent the occurrence of fine cracks. Thereby, the edge (51) of the glass substrate can be reliably chamfered without producing cracks.
Description
Technical field
The chamfering method of the fragile material substrate of being implemented when the present invention relates to the edge chamfering to the lateral edges of the glass substrate that uses in the flat-panel monitor (following table is shown FPD), semiconductor wafer etc. and implement employed facing attachment in its chamfering method.
Background technology
Below, the conventional art of the FPD that forms a kind of glass substrate of fragile material substrate is glued together is illustrated, usually, the FPD that glues together mutually between large-sized a pair of female glass, be each female glass to be blocked be the glass substrate of preliminary dimension separately, and be formed with a pair of glass substrate of preliminary dimension.When blocking female glass into glass substrate, normally cut cutter such as stone and be mechanically formed line with diamond, block female glass along the line that forms.
When blocking female glass like this, when being mechanically formed line with cutter etc., the periphery place in the line that forms can become the state that accumulates stress.And, when when glass substrate is blocked in line, the seamed edge of the lateral edges of the glass substrate surface that blocks formation with and the periphery place, can accumulate residual stress.This residual stress be make the near surface of glass substrate the latent stress of unwanted fracture propagation, the danger of existence is: when this residual stress discharges, can produce unwanted crack, breach can appear in seamed edge.The danger that exists is: owing to the fragment that breach produces appears in seamed edge, can cause damage etc. to the substrate surface of the FPD of manufacturing, can bring harmful effect.
For the breach of the seamed edge that prevents this glass substrate, to carry out chamfering for the seamed edge of the glass substrate of the preliminary dimension of being blocked.To a large amount of media such as water of seamed edge supply, on one side with the wet lapping of ciamond grinder grinding seamed edge, the dry grinding that laser beam is radiated at seamed edge carries out the chamfering of seamed edge by one side.In dry grinding, by or peel off seamed edge by the thermal stress that the irradiation of laser beam causes, or come the fusion seamed edge and the chamfering seamed edge by the irradiation of laser beam.
In using the wet lapping of ciamond grinder, the problem of existence is: can remaining continuously small crack in the part of chamfering, and the intensity around near the strength ratio the edge chamfering part obviously reduces.
Come in the dry grinding of chamfering at illuminating laser beam,, as shown in Figure 7,, can form new two seamed edge 50a and 50b in the part of the chamfering of glass substrate 50 in the occasion of peeling off seamed edge by thermal stress.
In addition, in that the fusion seamed edge comes the occasion of chamfering by illuminating laser beam, on glass substrate, owing to be mechanically formed the residual stress of the seamed edge of the formed glass substrate of line when blocking, sharply heated owing to the laser beam of fusion seamed edge, residual stress is by abrupt release, and the danger of existence is: can progressively expand down towards the unwanted crack of inside from the side of glass substrate.When glass substrate forms this unwanted crack, just can not use as the glass substrate of FPD.
The present invention is the invention that addresses this is that, and its purpose is, provides: the seamed edge that makes fragile material substrates such as glass substrate does not produce unwanted crack and the reliably chamfering method and the facing attachment of the fragile material substrate of chamfering.
Summary of the invention
The chamfering method of fragile material substrate of the present invention is characterized in that: have preheating procedure and fusion operation, above-mentioned preheating procedure is near the part to the seamed edge of the predetermined chamfering of the lateral edges of fragile material substrate, heat continuously along this seamed edge, above-mentioned fusion operation is this preheating procedure and then, is the continuous heating of this seamed edge is made its fusion.
It is characterized in that: aforementioned preheating procedure and fusion operation are to form the laser point with predetermined heat energy intensity distribution by the irradiation by laser beam to implement.
It is characterized in that: make an end of the long axis direction that aforementioned laser selects be positioned near the seamed edge of predetermined chamfering of fragile material substrate regenerator section, and the other end of long axis direction is positioned on the seamed edge of predetermined chamfering, makes relative this seamed edge of this long axis direction become the state of inclination.
The seamed edge of the relative fragile material substrate of the long axis direction of laser point and the state that tilts comprises following various states.For example: as shown in Figure 8, the major axis of laser point LS1 is at the state of seamed edge 51 inclinations of the relative glass substrate 50 of X-Y plane; For example, shown in Figure 10 (a), favour the state that X-Y plane comes illuminating laser beam, forms laser point LS1 along the seamed edge 51 of glass substrate 50; For example, shown in Figure 10 (b), the state that the seamed edge 51 of the relative glass substrate of major axis of laser point LS1 tilts; For example, shown in Figure 10 (c), relatively each face tilt predetermined angular of X-Y plane and X-Z face comes illuminating laser beam and forms state that the seamed edge 51 of the relative glass substrate of major axis of laser point LS1 and laser point tilts etc.
It is characterized in that: the intensity distributions of the heat energy of aforementioned laser point is: the intensity of heat energy of end that is positioned at aforementioned regenerator section is little, and in the end that is positioned on the seamed edge of aforementioned predetermined chamfering, it is maximum that heat energy intensity reaches.
It is characterized in that: after aforementioned fusion operation, also comprise heating process again the continuous heating of seamed edge of fusion.
It is characterized in that: aforementioned heating process again is to implement by shining other laser beam.
It is characterized in that: the surface tilt irradiation of the aforementioned other aforementioned relatively fragility substrate of laser beam.
The facing attachment of fragile material substrate of the present invention is the facing attachment that the seamed edge of the lateral edges of fragile material substrate is carried out the fragile material substrate of chamfering, it is characterized in that: have along near the part of this this seamed edge of seamed edge continuously pre-heating and heat the heater that this seamed edge makes its fusion continuously.
It is characterized in that: aforementioned heater has: the laser beam device of oscillating laser bundle, the optical system that forms the reservation shape laser point from the laser beam of this laser beam device vibration at aforementioned fragile material substrate, one end of the long axis direction of the laser point that is formed by this optical system is positioned near the regenerator section the seamed edge of predetermined chamfering of fragile material substrate, and the other end of long axis direction is positioned on the seamed edge of predetermined chamfering, make this long axis direction relatively this seamed edge become the state of inclination.
It is characterized in that: aforementioned optical system is little in the end heat energy intensity that is positioned at aforementioned regenerator section with the intensity distributions of aforementioned laser point, and in the end that is positioned on the seamed edge of aforementioned predetermined chamfering, and heat energy intensity reaches that maximum mode forms.
It is characterized in that: also be provided with reheater the continuous heating of seamed edge of fusion by aforementioned heater.
It is characterized in that: aforementioned reheater has: the 2nd laser beam device of the 2nd laser beam that vibrates, the optical system that forms the reservation shape laser point from the 2nd laser beam of the 2nd laser beam device vibration at aforementioned fragile material substrate.
Description of drawings
Fig. 1 is the general view of enforcement state of the chamfering method of expression fragile material substrate of the present invention.
Fig. 2 is the distribution map along the heat energy intensity of the long axis direction of the 1st laser point that is radiated at glass substrate.
Fig. 3 is the summary pie graph of facing attachment one example of expression fragile material substrate of the present invention.
Fig. 4 (a) is the summary pie graph that is illustrated in the unified example of employed optical system in the facing attachment of the present invention, and Fig. 4 (b) is the distribution map along the heat energy intensity of the long axis direction of the laser point that is formed by this optical system.
Fig. 5 (a) is illustrated in other routine summary pie graph of employed optical system in the facing attachment of the present invention, and Fig. 5 (b) is the distribution map along the heat energy intensity of the long axis direction of the laser point that is formed by this optical system.
Fig. 6 (a) is the summary pie graph that is illustrated in the other example of employed optical system in the facing attachment of the present invention, and Fig. 6 (b) is the distribution map along the heat energy intensity of the long axis direction of the laser point that is formed by this optical system.
Fig. 7 is the key diagram that comes the state of chamfering glass substrate with method in the past.
Fig. 8 is the approximate three-dimensional map of enforcement state of the chamfering method of expression fragile material substrate of the present invention.
Fig. 9 is the key diagram with the state of the seamed edge of the glass substrate of chamfering method of the present invention institute chamfering.
Figure 10 (a) is the figure of seamed edge heeling condition of the relative fragile material substrate of long axis direction of expression the 1st laser point, Figure 10 (b) is other figure of seamed edge heeling condition of the relative fragile material substrate of long axis direction of expression the 1st laser point, and Figure 10 (c) is the other figure of seamed edge heeling condition of the relative fragile material substrate of long axis direction of expression the 1st laser point.
Figure 11 (a) is the 1st laser beam of the chamfering method according to the present invention and the key diagram that the 2nd intensity of laser beam distributes, and Figure 11 (b) is the key diagram according to the Temperature Distribution of the seamed edge of chamfering method of the present invention.
Figure 12 is that expression favours the state diagram that X-Y plane comes illuminating laser beam, forms the 2nd laser point along the seamed edge of fragile material substrate.
The specific embodiment
Below, with reference to description of drawings form of implementation of the present invention.
Fig. 1 is the general view of enforcement state of the chamfering method of expression fragile material substrate of the present invention.This chamfering method is suitable for example to be implemented in: cut stone etc. by diamond and be mechanically formed after the line, block female glass and formed the occasion of the glass substrate of the FPD that constitutes display panels etc.
As shown in Figure 1, glass substrate 50 is moved to the direction shown in the arrow X.This occasion, at glass substrate 50, the seamed edge 51 of chamfering shines a pair of laser beam relatively.The 1st laser beam is radiated at glass substrate 50, make the relative glass substrate 50 of the 1st laser point LS1 chamfering seamed edge 51 and form the 1st laser point LS1 of the elliptical shape of predetermined oblique angle θ.
The 1st laser point LS1 forms: the elliptical shape of major diameter 30.00mm, minor axis 1.0mm.One end b of the long axis direction of the 1st laser point LS1 is positioned on the seamed edge 51 of predetermined chamfering, and the other end a of long axis direction then is is rightabout at the moving direction X with glass substrate 50,50 inside has near the part seamed edge 51 of appropriate intervals from seamed edge 51 to glass substrate.Therefore, along with glass substrate 50 the moving of directions X, the 1st laser point LS1 at first heats near the part of (preheating) seamed edge 51 by an end a of long axis direction along seamed edge 51 continuously, the other end b by long axis direction heats seamed edge 51 continuously afterwards.Like this, by heating seamed edge 51, make seamed edge 51 become molten condition.
At the seamed edge 51 of glass substrate 50, shine the 2nd laser beam to form and then the 2nd laser point LS2 of the 1st laser point LS1 elliptical shape.The 2nd laser point LS2 forms along seamed edge 51 and the elliptical shape that extends is identical with the 1st laser point LS1, forms for example major diameter 30.00mm, minor axis 1.0mm.By the 2nd laser point LS2, the seamed edge 51 that becomes molten condition is heated to be the temperature lower than glass melting temperature.
Fig. 8 is the brief strabismus map of enforcement state of the chamfering method of expression fragile material substrate of the present invention.The state of expression is: the 1st laser beam and the relative X-Y plane of the 2nd laser beam are the approximate vertical irradiation, form the 1st laser point LS1, the 2nd laser point LS2.
In addition, the seamed edge 51 inclination certain angle θ of the relative glass substrate 50 of the 1st laser point LS1 and forming.
Fig. 2 is the distribution map along the heat energy intensity of the long axis direction of the 1st laser point LS1 that is radiated at glass substrate 50.Slowly increase to other end b though the heat energy intensity of laser point LS1 is the end a near the long axis directions of the part seamed edge 51 of the glass substrate 50 of preheating, its intensity is less, and glass substrate 50 can not be melted.And at the other end b of long axis direction, its intensity sharply increases, and the heat energy intensity of its end b reaches the degree that can make glass substrate 50 fusions.
Though and then the 2nd laser point LS2 of the 1st laser point LS1, heating glass substrate 50 and the 1st laser point LS1 become same elliptical shape, its long axis direction is the seamed edge 51 along the chamfering of glass substrate 50.The distribution of the heat energy intensity of the 2nd laser point LS2 suitably is adjusted into the not condition of remaining residual stress.Though will be according to chamfering speed or glass material etc., the heat energy intensity of the 2nd laser point LS2 distributes preferably, and the b point is the highest, and is the distribution of steadily tilting along long axis direction.
This occasion, around the seamed edge 51 of glass substrate 50, owing to when blocking glass substrate 50, be mechanically formed line, though meeting is accumulated compression stress and is formed residual stress near line, but because the 1st laser point LS1 accumulates near the of residual stress and is slowly heated on every side from it.Like this, residual stress is compressed (being closed), has suppressed the expansion of unwanted crack to inside.
When the heat energy intensity of the 1st laser point LS1 was positioned at the turning 52 of seamed edge 51 ends on glass substrate 50 surfaces for maximum end b, because the maximum heat energy intensity of the 1st laser point LS1, the turning 52 of seamed edge 51 ends was heated fusion.Like this, seamed edge 51 becomes the state of chamfering.Then,, reach maximum end b by the heat energy intensity of the 1st laser point LS1 and come the seamed edge 51 of heating glass substrate 50 successively, its seamed edge 51 continuous fusions and chamfering along with moving of glass substrate 50.
Fig. 9 is the key diagram with the seamed edge state of the glass substrate of chamfering method chamfering of the present invention.
As shown in Figure 9, reach the amount of the end b institute fusion of maximum by the heat energy intensity of the 1st laser point LS1, it is the atomic a small amount of of front end of the seamed edge 51 (knuckle line) of glass substrate 50, the heat energy intensity of the 1st laser point LS1 preferably is adjusted into: its fusion amount is the front end from seamed edge 51, be used in the Y direction apart from the line of the Z direction of 0.01mm～0.1mm, with the Z direction apart from the line of the Y direction of 0.01mm～0.1mm, with the surperficial 50a of the glass substrate that forms seamed edge 51 and the zone (the oblique line part of Fig. 9) that end face 50b is surrounded.
In addition, as shown in Figure 9, owing to make seamed edge 51 become curved surface, the edge stability of the material after the chamfering has great raising.
Like this, when seamed edge 51 fusions of glass substrate 50 and when becoming the chamfering state, for the seamed edge 51 that becomes molten condition, Continuous irradiation the 2nd laser point LS2.Like this, because the seamed edge 51 of fusion is slowly cooled off, so therefore the not danger of being cooled off fast by air, needn't worry the seamed edge 51 meeting residual stress in fusion, the seamed edge 51 of chamfering does not have the danger that destroys because of residual stress.
Figure 11 is according to the 1st laser beam of chamfering method of the present invention and the 2nd intensity of laser beam distributes and the key diagram of the Temperature Distribution of seamed edge.
According to relative moving speed of the 1st laser point LS1 and the 2nd laser point LS2 etc., the 2nd intensity of laser beam distributes, preferably the intensity distributions of the 2nd laser point LS2 is adjusted into the distribution shown in Figure 11 (a), the Temperature Distribution of annealing (anneal) gained seamed edge 51 becomes the distribution shown in Figure 11 (b).
Fig. 3 is the summary pie graph of form of implementation of the facing attachment of expression fragile material substrate of the present invention.This facing attachment uses and exists, for example for the end face of the employed glass substrate of FPD being carried out the occasion of chamfering, as shown in Figure 3, on the stand 11 of level, have along the sliding stand 12 that moves back and forth of fixed horizontal direction (Y direction).
Sliding stand 12 be by on stand 11 along pair of guide rails 14 and 15 supports of Y direction configured in parallel, can slide along each guide rail 14 and 15 in level.Be provided with the ball-screw 13 parallel with 15 with each guide rail 14 at two guide rails 14 with 15 centre, this ball-screw 13 can be rotated by motor (not shown).Ball-screw 13 can rotate and reverse, and screws togather ball nut 16 at this ball-screw 13, with this state ball-screw 13 is installed.Ball nut 16 relative sliding stands 12 do not rotate and are installed as one, and by rotating and reverse of ball-screw 13, ball nut 16 slides in two directions along ball-screw 13.Like this, the sliding stand 12 that is installed as one with ball nut 16 slides in the Y direction along each guide rail 14 and 15.
On sliding stand 12, with level configuration pedestal 19.Pedestal 19 is supported by the pair of guide rails 21 of configured in parallel on sliding stand 12, and can slide along it.Each guide rail 21 is along disposing with the perpendicular directions X of the glide direction Y direction of sliding stand.In addition, the mid portion between each guide rail 21 disposes the ball-screw 22 parallel with each guide rail 21, and ball-screw 22 is just being changeed by motor 23 and reversing.
Ball nut 24 is installed on the ball-screw 22 with the state that screws togather.Ball nut 24 relative pedestals 19 do not rotate and are installed as one, and by rotating and reverse of ball-screw 22, ball nut 24 moves at both direction along ball-screw 22.Like this, pedestal 19 slides at the directions X along guide rail 21.
On pedestal 19, be provided with rotating mechanism 25, on this rotating mechanism 25, be provided with the turntable of placing as the glass substrate 50 that blocks object 26 with level.Rotating mechanism 25 makes turntable 26 around the rotation of vertically central shaft, can make turntable 26 relative datum positions rotate to be anglec of rotation θ arbitrarily.On turntable 26, for example fix glass substrate 50 with sucker.
Above turntable 26, dispose brace table 31 with turntable 26 proper spacing of being separated by.This brace table 31 is supported on the bottom of the 1st optics retainer 33 that is disposed with plumbness with level.The upper end of the 1st optics retainer 33 be installed in the assembly bench 32 that is located on the stand 11 below.Be provided with the 1st laser oscillator 34 of vibration the 1st laser beam on assembly bench 32, the laser beam that vibrates from the 1st laser oscillator 34 is radiated at the optical system that remains in the 1st optics retainer 33.
Distributing from the heat energy intensity of the laser beam of the 1st laser oscillator 34 vibration is normal distribution, and by being arranged on the optical system in the 1st optics retainer 33, then become the 1st laser point LS1 of the elliptical shape with predetermined heat energy intensity distribution shown in Figure 2, and, shine with the state of the directions X predetermined oblique angle θ of its long axis direction glass substrate 50 on turntable 26 staggered relatively.
In addition, be provided with the 2nd laser oscillator 41 of vibration the 2nd laser beam at assembly bench 32, be radiated at optical system in the 2nd optics retainer 42 from the laser beam of the 2nd laser oscillator 41 vibration, the 2nd optics retainer 42 is adjacent with the 1st optics retainer 33 and be arranged on brace table 31.To form suitable distribution from the laser beam of the 2nd laser oscillator 41 vibrations, so that by not remaining residual stress in the glass substrate 50 after the 1st laser point LS1 heating, by being located at the optical system in the 2nd optics retainer 42, form elliptoid the 2nd laser point LS2, its long axis direction is the state along the directions X that is placed on the glass substrate 50 on the turntable 26, fetches irradiation mutually with the 1st laser point LS1.
In addition, the position of sliding stand 12 and pedestal 9 is determined, the control of rotating mechanism 25, the 1st laser oscillator the 34, the 2nd laser oscillator 41 etc. are to be controlled by control part.
Fig. 4 (a) is provided in a side of the summary pie graph of the optical system in the 1st optics retainer 33.Come total reflection from the 1st laser beam of the 1st oscillator 34 vibrations by the completely reflecting mirror 33a that is located in the 1st optics retainer 33, be radiated at diffraction grating lens 33b.Grating space and the raster width of the diffraction grating lens 33b that sets will make the heat energy intensity of laser beam of irradiation distribute shown in Fig. 4 (b), progressively change along long axis direction, at one end become maximum.
When coming the seamed edge of chamfering glass substrate 50 by this facing attachment, at first, be information such as the position of the seamed edge of the size of the glass substrate 50 of chamfering, chamfering, length input control part.
Then, the glass substrate 50 of chamfering is placed on the turntable 26 of chalker, and fixes by suction device.When becoming this state, by ccd video camera 38 and 39 pairs of benchmark sign shootings that are located at glass substrate 50.The benchmark sign of shooting is shown by monitor 28 and 29, is handled the positional information of benchmark sign by the portrait treating apparatus.
Afterwards, the turntable 26 of having placed glass substrate 50 is moved relative to brace table 31, the heat energy intensity of the 1st laser point LS1 that shines from the 1st optics retainer 33 is reached the turning that maximum end is positioned at the seamed edge that comprises glass substrate 50 chamferings, and, the tilt angle theta that makes the relative seamed edge of its 1st laser point LS1 tilt to be scheduled to, in addition, the position of determining turntable 26 makes becomes state along seamed edge from the long axis direction of the 2nd laser point LS2 of the 2nd optics retainer 42 irradiations.The position of turntable 26 is determined by being undertaken by the rotation of the slip of the slip of sliding stand 12, pedestal 19 and rotating mechanism 25 caused turntables 26.
When becoming such state,, turntable 26 is slided on one side along directions X on one side from the 1st laser oscillator 34 and the 2nd oscillator 41 irradiation the 1st laser beam and the 2nd laser beams.Like this, as illustrated at Fig. 1, can not form the crack at glass substrate 50, seamed edge 51 is by fusion chamfering successively.
Fig. 5 (a) is the summary pie graph that expression is located at other example of the optical system in the 1st optics retainer 33.From the 1st laser beam of the 1st laser oscillator 34 vibration, by be located in the optics retainer 33 diffraction grating speculum 33c carry out total reflection.This occasion, grating space and the raster width of the diffraction grating speculum 33c that sets will make the heat energy intensity of laser beam of total reflection distribute shown in Fig. 5 (b), progressively change along long axis direction, at one end become maximum.
Fig. 6 (a) is the summary pie graph that expression is located at the other example of the optical system in the 1st optics retainer 33.From the 1st laser beam of the 1st laser oscillator 34 vibration, by being located at X-axis current mirror 33d in the optics retainer 33 after the X-direction high-velocity scanning, mirror 33e becomes the laser point of elliptical shape in the Y direction high-velocity scanning by Y-axis electric current (ガ Le バ ノ).Then, the laser point of the elliptical shape that is formed by Y-axis coated mirrors 33e distributes its heat energy intensity by f-θ lens, shown in Fig. 6 (b), progressively changes along long axis direction, at one end reaches maximum intensity.
In the above description, the situation of main explanation is: the 1st laser beam and the 2nd laser beam are surperficial 50a (X-Y plane) the approximate vertical irradiations of relative glass substrate 50, and form the 1st laser point LS1 and the 2nd laser point LS2, the seamed edge 51 predetermined oblique angle θ of the relative glass substrate 50 of the 1st laser point LS1 and forming, but the also state of the seamed edge of fragile material substrate for tilting relatively of the long axis direction of the 1st laser point as shown below.
The state of the seamed edge of the relative fragile material substrate of long axis direction of so-called laser point for tilting includes: for example, as shown in Figure 8, the state that the seamed edge 51 of the major axis of laser point LS1 relative glass substrate 50 on X-Y plane tilts; In addition, for example, shown in Figure 10 (a), the inclination X-Y plane comes illuminating laser beam, forms the state of laser point LS1 along the seamed edge 51 of glass substrate 50; In addition, for example, shown in Figure 10 (b), the state that the seamed edge 51 of the relative glass substrate of major axis of laser point LS1 tilts; In addition, for example, shown in Figure 10 (c), each face of relative X-Y plane and X-Z face, predetermined oblique angle is come illuminating laser beam, forms laser point LS1, and the seamed edge 51 of the relative glass substrate of major axis of laser point LS1 is the state of inclination etc.
In addition, for example, as shown in figure 12, the X-Y plane that also can tilt comes illuminating laser beam, forms the 2nd laser point LS2 along the seamed edge 51 of glass substrate 50.
In addition, for example, also the predetermined angle of each face tilt of X-Y plane and X-Z face is come illuminating laser beam relatively, along the seamed edge 51 formation laser point LS2 of glass substrate 50.
During any method in the illuminating method that adopts above-mentioned laser beam, the 1st laser point LS1 and the 2nd laser point LS2 preferably become the distribution shown in Figure 11 (a) along the intensity distributions of seamed edge 51, preferably become the distribution shown in Figure 11 (b) by the Temperature Distribution of the seamed edge of each laser point heating.
As mentioned above, the chamfering method of fragile material substrate of the present invention and facing attachment can not make fracture propagation, can carry out chamfering to the fragile material substrate reliably.And, owing to prevented in the chamfered part residual stress, so, the destruction that can also prevent chamfered part.
Claims (11)
1. the chamfering method of a fragile material substrate, it is characterized in that: have preheating procedure and fusion operation, above-mentioned preheating procedure is near the part to the seamed edge of the predetermined chamfering of the lateral edges of fragile material substrate, heat continuously along this seamed edge, above-mentioned fusion operation is this preheating procedure and then, is the continuous heating of this seamed edge is made its fusion; The heating of aforementioned preheating procedure and aforementioned fusion operation is to implement by the laser point with predetermined heat energy intensity distribution, and this laser point is to move along aforementioned seamed edge by the irradiation that makes laser beam to form.
2. the chamfering method of fragile material substrate as claimed in claim 1, it is characterized in that: make an end of the long axis direction that aforementioned laser selects be positioned near the seamed edge of predetermined chamfering of fragile material substrate regenerator section, and the other end of long axis direction is positioned on the seamed edge of predetermined chamfering, makes relative this seamed edge of this long axis direction become the state of inclination.
3. the chamfering method of fragile material substrate as claimed in claim 2, it is characterized in that: the intensity distributions of the heat energy of aforementioned laser point is: the intensity of heat energy of end that is positioned at aforementioned regenerator section is little, and in the end that is positioned on the seamed edge of aforementioned predetermined chamfering, it is maximum that heat energy intensity reaches.
4. the chamfering method of fragile material substrate as claimed in claim 1 is characterized in that: after aforementioned fusion operation, also have the heating process again to the continuous heating of seamed edge of fusion.
5. the chamfering method of fragile material substrate as claimed in claim 4 is characterized in that: aforementioned heating process again is to implement by shining other laser beam.
6. the chamfering method of fragile material substrate as claimed in claim 5 is characterized in that: the surface tilt irradiation of the aforementioned other aforementioned relatively fragile material substrate of laser beam.
7. the facing attachment of a fragile material substrate possesses heater, and this heater, and heats seamed edge continuously and makes its fusion along aforementioned seamed edge preheating near the part of the seamed edge of the lateral edges of fragile material substrate; In the facing attachment of this fragile material substrate, it is characterized in that:
Aforementioned heater has: the laser beam device of oscillating laser bundle, the optical system that forms the reservation shape laser point from the laser beam of this laser beam device vibration at aforementioned fragile material substrate;
The laser point of aforementioned heater is moved along aforementioned seamed edge.
8. the facing attachment of fragile material substrate as claimed in claim 7, it is characterized in that: an end of the long axis direction that aforementioned laser is selected is positioned near the regenerator section of seamed edge of the predetermined chamfering of fragile material substrate, and the other end of long axis direction is positioned on the seamed edge of predetermined chamfering, make this long axis direction relatively this seamed edge become the state of inclination.
9. the facing attachment of fragile material substrate as claimed in claim 8, it is characterized in that: aforementioned optical system is that to make the heat energy intensity of the aforementioned laser point of formation be distributed in the end heat energy intensity that is positioned at aforementioned regenerator section little, and in the end that is positioned on the seamed edge of aforementioned predetermined chamfering, it is maximum that heat energy intensity reaches.
10. the facing attachment of fragile material substrate as claimed in claim 8 is characterized in that: also be provided with the reheater to the continuous heating of seamed edge of the fusion by aforementioned heater.
11. the facing attachment of fragile material substrate as claimed in claim 10 is characterized in that: aforementioned reheater has: the 2nd laser beam device of the 2nd laser beam that vibrates, the optical system that forms the reservation shape laser point from the 2nd laser beam of the 2nd laser beam device vibration at aforementioned fragile material substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001244748 | 2001-08-10 | ||
| JP244748/01 | 2001-08-10 | ||
| JP244748/2001 | 2001-08-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1491144A CN1491144A (en) | 2004-04-21 |
| CN1283409C true CN1283409C (en) | 2006-11-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB02804763XA Expired - Fee Related CN1283409C (en) | 2001-08-10 | 2002-08-09 | Brittle material substrate chamfering method and chamfering device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP3823108B2 (en) |
| KR (1) | KR100820689B1 (en) |
| CN (1) | CN1283409C (en) |
| TW (1) | TWI252788B (en) |
| WO (1) | WO2003015976A1 (en) |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01167700A (en) * | 1987-12-23 | 1989-07-03 | Fuji Electric Co Ltd | Radioactive liquid waste treatment equipment for nuclear reactor facility |
| JP2612332B2 (en) * | 1989-03-13 | 1997-05-21 | 株式会社東海理化電機製作所 | Glass member chamfering method |
| JPH1167700A (en) * | 1997-08-22 | 1999-03-09 | Hamamatsu Photonics Kk | Manufacture of semiconductor wafer |
| JP2000344551A (en) * | 1999-03-03 | 2000-12-12 | Shin Meiwa Ind Co Ltd | Glass plate manufacturing method and glass plate |
| JP2000247671A (en) * | 1999-03-04 | 2000-09-12 | Takatori Corp | Method for cutting glass |
-
2002
- 2002-08-09 KR KR1020037008580A patent/KR100820689B1/en not_active IP Right Cessation
- 2002-08-09 CN CNB02804763XA patent/CN1283409C/en not_active Expired - Fee Related
- 2002-08-09 WO PCT/JP2002/008203 patent/WO2003015976A1/en active Application Filing
- 2002-08-09 JP JP2003520519A patent/JP3823108B2/en not_active Expired - Fee Related
- 2002-08-09 TW TW091117971A patent/TWI252788B/en not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2003015976A1 (en) | 2003-02-27 |
| KR100820689B1 (en) | 2008-04-10 |
| JPWO2003015976A1 (en) | 2004-12-02 |
| KR20040024537A (en) | 2004-03-20 |
| TWI252788B (en) | 2006-04-11 |
| CN1491144A (en) | 2004-04-21 |
| JP3823108B2 (en) | 2006-09-20 |
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