KR101399838B1 - Method of finishing side surfaces of transparent substrate for display device and finishing apparatus using same - Google Patents

Abstract

The present invention relates to a method for processing a side surface of a transparent substrate for a display device and a processing apparatus using the same, and more particularly, to a method for processing a transparent substrate for a display device, ; A cutting surface finishing step of finishing the cut surface by irradiating the cut surface with the first laser beam so that the center of the first laser beam moves along a center path along the cut surface of the transparent substrate; The second laser beam is irradiated onto the cut surface in such a manner that the center of the second laser beam moves along one side path on the cut surface deviated to one side from the center line of the transparent substrate toward the surface of the transparent substrate, Forming a chamfer forming a chamfer that is inclined along an edge; A processing method of a transparent substrate for a display device and a processing device using the same, which can precisely process side surfaces of a transparent substrate within a shorter time with a high yield, which minimizes the occurrence frequency of microcracks, is provided.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a side surface of a transparent substrate for a display device,

The present invention relates to a method of processing a transparent substrate for a display device and a processing apparatus using the same, and more particularly, to a method of manufacturing a transparent substrate for a display device having a higher resistance to impact and external force, To a machining method and a machining apparatus for forming chamfers.

Recently, a lot of information is provided to the public through a display device, and accordingly, the usage amount of the display device is increasing. In recent years, display devices have become smaller and more widely used as mobile devices become more popular. A transparent substrate is disposed on the outermost side of the display device to protect elements such as a liquid crystal and an organic light emitting element, which are responsible for a display function, from external force and impact.

On the other hand, a transparent substrate used in a display device is used after a large transparent substrate is manufactured, and then the laser beam is irradiated on the surface of a large transparent substrate or cut with a saw for cutting a substrate. However, in the process of cutting a large substrate so as to have a size finally used for a display device, as shown in Fig. 1, a cut surface 12 surrounding the periphery 11 of the cut transparent substrate S for a display device, Uneven fine irregularities are formed.

However, when the transparent substrate S having the cut surface 12 on which the fine concavities and convexities are formed is used as it is for the display device, it is possible to prevent the transparent substrate S from being deformed due to an external force or impact acting on the surface or the edge of the transparent substrate S during use of the display device. There has been a problem that cracks are generated and grown on the cut surface 12 on which the fine irregularities are formed and the transparent substrate S is broken.

Therefore, in order to reduce the possibility of breakage of the transparent substrate S on which fine irregularities have been formed, conventionally, a grinding process is performed with a fine grinding grinder while supplying polishing oil to the cut surface 12 of the transparent substrate S, After that, the particles generated in the grinding process are cleanly cleaned. Then, after the fluorine (hydrofluoric acid) process is performed, the rigidity of the transparent substrate S of the glass material is increased, and then the fluorine liquid on the transparent substrate S is cleanly cleaned.

However, performing the grinding process on the cut surface 12 of the transparent substrate S with the grinding grinder mechanically removes the irregularities on the cut surface 12, so that cracks are generated from the cut surface 12 of the substrate S during the grinding process There is a problem in that the yield is lowered by causing growth and breakage, and in addition, a process of supplying abrasive oil for the grinding process and cleaning the abrasive particles must be performed, so that the number of steps increases, There was a problem. Further, since the rigidity of the transparent substrate S is improved by using fluorine which is very harmful to the human body, there has been a serious problem that the health and safety of the worker is seriously threatened.

In addition, in order to easily mount the transparent substrate S on the display device, it needs to be assembled more firmly with the frame forming the periphery of the display device.

For this purpose, a chamfering process is performed along the peripheral edge of the transparent substrate. Conventionally, a chamfering process has been performed on the peripheral edge of the transparent substrate by a grinding process. However, chamfering the chamfer by slicing the circumferential edge of the substrate by a certain amount of time by grinding requires a long time, resulting in a decrease in productivity and a serious problem of causing cracking at the cut surface 12, .

Therefore, there is a desperate need for a chamfer that is inclined along the edge of the transparent substrate, which is a material such as glass, to be processed into an accurate shape within a short time, and at the same time, the yield of chamfer processing.

In order to solve the above problems, the present invention provides a processing method and a processing apparatus for manufacturing a transparent substrate for a display device having improved durability by allowing a transparent substrate for a display device to have a higher resistance to impact or external force The purpose.

It is another object of the present invention to shorten the time required for manufacturing while increasing the yield of the transparent substrate by simply and efficiently removing fine unevenness on the cut surface of the transparent substrate for a display device.

Best Mode for Carrying Out the Invention The present invention aims to provide a process for forming an inclined chamfer along the edge of a transparent substrate made of a glass material with a high yield in a short time.

In order to achieve the above object, the present invention provides a method of processing a transparent substrate for a display device, comprising: a substrate cutting step of cutting a large substrate so as to be a transparent substrate having a size used in the display device; A cutting surface finishing step of finishing the cut surface by irradiating the cut surface with the first laser beam so that the center of the first laser beam moves along a center path along the cut surface of the transparent substrate; The second laser beam is irradiated onto the cut surface in such a manner that the center of the second laser beam moves along one side path on the cut surface deviated to one side from the center line of the transparent substrate toward the surface of the transparent substrate, Forming a chamfer forming a chamfer that is inclined along an edge; And a transparent substrate for a display device.

This is because in the process of cutting a large substrate to a size of a transparent substrate used for a display device by using a laser beam, a saw, or the like, fine irregularities, which can only be generated on the cut surface, It is possible to completely remove the micro concavo-convex portion of the cutting face only by the laser irradiation process in a short time, and at the same time, it is possible to remove the concavo-convex portion at the side edge The present invention has been made in view of the above problems, and it is an object of the present invention to provide a method of manufacturing a semiconductor device.

Since the cutting process of the cut surface of the transparent substrate does not require grinding oil or the like, unlike the conventional grinding method, the process of finishing the transparent substrate can be completed easily in a short time, It is possible to ensure the health and safety of the worker and to obtain an advantageous effect of securing a flexural rigidity about 5 times higher than that obtained by the conventional four steps .

The chamfering process of the transparent substrate as described above does not require the supply of the polishing oil or the cleaning process, unlike the conventional grinding method, but also the micro-cracks It is possible to obtain an advantageous effect that the inclined chamfer can be formed accurately and consistently and at the same time, the machining can be performed with a high yield.

Therefore, the glass substrate processed as described above can be utilized in a form having high strength and durability in a display device.

To this end, it is most preferable that the cutting surface finishing step irradiates the first laser beam perpendicularly to the cut surface. However, the first laser beam may be irradiated on the cut surface at an angle of 30 degrees or less from a direction perpendicular to the cut surface so that the laser beam can sufficiently irradiate the cut surface.

The chamfer forming step irradiates the second laser beam so that the focal point of the second laser beam is located in the transparent substrate when the second laser beam is vertically irradiated on the cut surface of the transparent substrate. That is, the chamfer forming step irradiates the second laser beam onto the cut surface in such a manner that the second laser beam reaches the cut surface before reaching the focal point. In this way, it is possible to form an inclined chamfer at the side edge of the transparent substrate without transmitting energy to the side of the transparent substrate by the second laser beam irradiated along the one-side path, do. For example, when the focal point of the second laser beam is located in the transparent substrate, energy is concentrated at the side edge of the transparent substrate at an excessively high energy density, so that local microcracks occur irregularly at the edges of the transparent substrate . In addition, when the focal point of the second laser beam is located on the upper side of the transparent substrate, the energy is dispersed at the side edge of the transparent substrate with a relatively low energy density, so that the chamfer for chamfering the edge of the transparent substrate is smoothly formed Causing problems.

In order to accurately process the chamfer inclined along the edge of the transparent substrate, the focal point of the second laser beam is positioned within the transparent substrate spaced from the cut surface (the side of the transparent substrate) by 5 mm to 20 mm, It is preferable to irradiate with one side path.

In this case, it is effective that the center of the second laser beam is spaced apart from the center line by one seventh or more of the thickness wo of the transparent substrate. If the substrate is located 1/7 of the thickness wo from the side center line of the transparent substrate, the chamfer can be processed without being processed along the edge near the center line of the transparent substrate. However, for a short space spaced 1/7 to 1/6 from the center line, chamfering is performed by adjusting the position of the focus to the lower side of the cut surface, and by adjusting the position of the focus to the upper side of the cut surface It may be adjusted so that the finishing process is performed.

And, the chamfer forming step may be configured to relatively move the second laser beam along the cut surface at a speed of 10 mm / sec to 20 mm / sec.

It is preferable that the center path of the first laser beam is positioned within 1/6 of the thickness wo of the transparent substrate from the center line and the focus of the first laser beam is located outside the transparent substrate Do.

The first laser beam and the second laser beam may be irradiated perpendicularly to the cut surface. However, the second laser beam may be irradiated to the cut surface in an oblique direction, and the inclination angle may be an acute angle toward the surface of the glass substrate. As the inclination angle of the second laser beam with respect to the vertical plane becomes larger, the chamfer is chamfered with a lower inclination.

The cut surface may be arranged around the transparent substrate.

Although the transparent substrate may be a plastic material, the method according to the present invention is applied particularly well to glass materials, which are widely used in general use. In addition, the transparent substrate may be a tempered glass substrate having a reinforcing layer formed to a certain thickness.

In particular, it is preferable that the first laser beam and the second laser beam are carbon dioxide (CO ₂ ) laser beams having a high absorption ratio to glass material. As a result, it is possible to effectively remove fine irregularities existing on the side surface of the transparent substrate and effectively reinforce the rigidity of the transparent substrate. Further, even when the chamfer is processed along the edge of the second transparent substrate, the chamfer of the intended shape can be accurately processed even if there is some error in adjusting the position and the focal height of the second laser beam.

Alternatively, it is most preferable that the first laser beam and the second laser beam have a wavelength band of 8 占 퐉 to 15 占 퐉 (which belongs to a band having a higher wavelength in the infrared wavelength range). If the wavelength of the first laser beam and the second laser beam is in the range of about 200 nm to 350 nm, however, if the wavelength is low, there is a slight error in the position of the laser beam, Because microcracks are generated on the side surface of the wafer, the chamfer can not be precisely processed.

It is most effective that the first laser beam for finishing the side surface (or the cut surface) of the transparent substrate is irradiated with the carbon dioxide laser beam onto the cut surface at an output intensity of 30 W to 300 W. When the first laser beam is irradiated on the cut surface of the transparent substrate with an output lower than 30 W, the rough cut surface is not sufficiently removed, the strength of the side surface of the transparent substrate is not sufficiently strengthened, and the first laser beam is made transparent In the case of irradiating the cut surface of the substrate, as the energy density applied to the cut surface becomes excessive, the flatness of the cut surface may be affected or microcracks may be generated.

Further, it is most effective that the second laser beam, which processes an inclined chamfer at the edge of the transparent substrate, is irradiated on the cut surface with an output intensity of 20 W to 70 W. When the output intensity of the second laser beam is lower than 20 W, marks such as scratches may remain on the side of the transparent substrate (mainly glass material). If the output intensity of the second laser beam is higher than 70 W, This is caused by the failure to leave traces of cracking.

The chamfer forming step may include forming a chamfer at both side edges of the cut surface of the transparent substrate, although a chamfer inclined only at one side edge of the cut surface of the transparent substrate may be formed.

According to another aspect of the present invention, there is provided a cutting surface finishing apparatus for a transparent substrate for a display, comprising: a laser beam oscillator for generating a laser beam; A laser beam irradiator for receiving a laser beam from the laser beam oscillator and irradiating the laser beam; A fixing table for fixing the transparent substrate cut to a size used in the display device; A moving unit moving at least one of the fixing table and the laser beam irradiator so that the laser beam oscillated from the laser beam irradiator moves along the cut surface of the transparent substrate and moving the laser beam also in the thickness direction of the cut surface; The first laser beam irradiated from the laser beam irradiator is moved along the cut surface of the transparent substrate to finish the cut surface and then the center of the second laser beam irradiated from the laser beam irradiator And a chamfer is formed on one side of the cut surface while moving along a one-side path shifted to one side from the center line of the cut surface.

At this time, in order to make it possible to perform the step of removing fine concavities and convexities existing on the cut surface of the transparent substrate in the cutting step corresponding to the size of the display device in a shorter time, the cut surface of the transparent substrate is exposed to the laser beam A device configuration is required. In order to achieve this, the fixing table is provided with a first fixing member and a second fixing member, each of which has a size smaller than that of the transparent substrate while being in contact with both surfaces of the transparent substrate with the transparent substrate interposed therebetween, The transparent substrate is positioned so that the cut surface is exposed to the outside of the first fixing member and the second fixing member.

As a result, at least one of the fixing table and the laser beam irradiator is relatively moved and rotated so that the cutting surface of the transparent substrate can be laser-finished at once in a fixed position by setting the transparent substrate once on the fixing table , It is possible to obtain an advantageous effect that the finishing step of the transparent substrate can be performed accurately in a shorter time.

At this time, at least one of the first fixing member and the second fixing member is provided with an electromagnet which pulls the first fixing member and the second fixing member, so that the first fixing member and the second The fixing member may be configured to position and fix the transparent substrate therebetween while a force is applied to bring the fixing members into close contact with each other.

The moving unit may include: a linear movement driving unit for linearly moving the fixing table; A rotation driving unit for rotating the fixing table and the linear motion driving unit; Wherein the laser beam irradiator irradiates a laser beam onto a cut surface of the transparent substrate while the laser beam irradiator is in a fixed position and the transparent substrate fixed to the fixing table is linearly moved and rotated by the linear movement drive unit and the rotation drive unit, The cutting surface of the edge is trimmed and the chamfer is machined.

Preferably, the focus of the second laser beam is configured to move the chamber along the one-side path to the transparent substrate while being positioned within the transparent substrate spaced from the cut surface by 5 mm to 20 mm.

The moving unit can perform the side processing of the transparent substrate while moving the relative speed between the laser beam and the transparent substrate at a speed of 10 mm / sec to 20 mm / sec.

Above all, the second laser beam is selected to have a wavelength band of 8 占 퐉 to 15 占 퐉, so that a clean inclined chamfer can be formed without causing cracks on the side surface of the transparent substrate.

At the same time, the first laser beam is irradiated on the cut surface with an output intensity of 30 W to 300 W, and the second laser beam is irradiated on the cut surface with an output intensity of 20 W to 70 W, thereby causing microcracks in the cut surface of the transparent substrate It is possible to form a sloping chamfer while the strength is increased.

As described above, according to the present invention, in the process of cutting a large substrate to a size of a transparent substrate used for a display device by using a laser beam, a saw, or the like, fine irregularities, So that it is possible to obtain an advantageous effect that the fine unevenness of the cut surface can be completely removed within a short time by only the laser irradiation process.

That is, according to the present invention, the finishing process of the transparent substrate can be completed easily in a short time, thereby causing a problem that the periphery of the transparent substrate becomes dirty due to supply of polishing oil or the like unlike the conventional grinding method, There is an advantage in solving various problems that it is necessary to perform a process of cleaning a dirty transparent substrate by mixing grinding particles and polishing oil at the same time.

Best Mode for Carrying Out the Invention The present invention relates to a method for manufacturing a transparent substrate by moving a laser beam along a single side path spaced from a side center line of a transparent substrate and adjusting a focus height so as to form a focal point of the laser beam inside the transparent substrate, It is possible to obtain an advantageous effect that the slant chamfer can be accurately machined into a certain shape without generating microcracks along the slant face.

As a result, side processing of the transparent substrate can be performed at a high yield within a shorter time, and therefore, a transparent substrate such as glass used in a display device can be advantageously processed at a lower cost and at a lower cost.

On the other hand, a transparent substrate used in a display device is generally mounted as a glass substrate. In particular, the present invention is characterized in that, by using a carbon dioxide laser beam having a wavelength band of 8 탆 to 15 탆 to finish a side surface of a transparent substrate and form a chamfer, It is possible to obtain an advantageous effect that the intended shape can be processed while accommodating the focus height and path error of the beam to some extent.

In the present invention, a transparent substrate is fixed between a first fixing member and a second fixing member, which are separated from each other so as to expose all the cut surfaces arranged around the transparent substrate and to which a magnetic force acts, The transparent substrate can be set in a state in which it is exposed to the outside of the first fixing member and the second fixing member, so that the cutting surface of the transparent substrate can be irradiated with the laser beam in one setting and finishing can be performed. It is possible to obtain an advantageous effect that can be accurately performed in a short time.

1 is a view showing the shape of a transparent substrate cut from a large substrate,
2 is a flowchart showing a method of processing a transparent substrate for a display device according to an embodiment of the present invention,
FIG. 3 is a schematic view showing a configuration in which the substrate cutting process of FIG. 2 is performed;
Fig. 4 is a perspective view showing a configuration of a cutting plane finisher for a transparent substrate for a display device in which the cutting plane finishing process of Fig. 2 is performed; Fig.
Fig. 5 is a plan view of Fig. 4,
FIG. 6 is a schematic view showing the arrangement structure of the laser beam and the substrate of FIG. 4,
FIG. 7 is an enlarged view of a portion 'A' in FIG. 6,
8 is an enlarged perspective view showing a configuration for machining a sloped chamfer relative to the transparent substrate for a display device in which the cutting surface finishing step of Fig. 7 has been performed, Fig.
FIG. 9 is a cross-sectional view of a transparent substrate on which an inclined chamfer is formed by a chamfering process according to FIG. 8,
Fig. 10 is a side view showing the configuration of a cutting plane finishing apparatus for a transparent substrate for a display device according to another embodiment in which the cutting plane finishing step of Fig. 2 is performed; Fig.
11 is a view showing a principle of removing a fine uneven layer remaining by a laser beam irradiated on a cut surface of a transparent substrate,
12A to 12D are sectional photographs of a transparent substrate for a display device according to the present invention,
13 is a photograph of a bending rigidity test apparatus of a transparent substrate,
14A is a graph showing the results of the flexural rigidity test of the transparent substrate before machining,
14B is a graph showing the results of the flexural rigidity test of the transparent substrate before machining,
15 is a comparison chart of the experimental results shown in Figs. 13A and 13B.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention.

A method (S100) of processing a transparent substrate for a display device according to an embodiment of the present invention includes cutting a large substrate (So) with a transparent substrate (S) of a size used in a display device such as a liquid crystal display A first laser beam L1 is irradiated along a center path Pc of a cut surface 12 of a transparent substrate S cut to a size used in a display device in a substrate cutting step S110, (S120) for finishing the cut surface (12) of the transparent substrate (S) while moving (99) while irradiating the second laser And a chamfer forming step S130 for moving the beam L2 while irradiating the beam L2 to process the inclined chamfer Cf on the cut surface 12 or the side surface of the transparent substrate S.

At this time, the laser beam L irradiated from the laser beam irradiator 130 irradiates the first laser beam L1 in the cut surface finishing step S120, and the laser beam L irradiates the first laser beam L1 in the chamfer forming step S130, And irradiates the second laser beam L2.

3, the laser beam L 'is irradiated from the laser beam irradiator 110 to the surface of the large transparent substrate So (see FIG. 3) Is irradiated along a predetermined imaginary line (21), and the large transparent substrate (So) is divided and cut into a transparent substrate (S) of a size usable for a display device.

The laser beam irradiator 110 receives the laser beam generated from the beam oscillator 118 through the optical fiber 111 and vertically irradiates the imaginary line of the large transparent substrate So and cuts the laser beam, And cut into a plurality of transparent substrates S of appropriate sizes. As shown in Fig. 1, fine unevenness remains on the cut surface 12 of the transparent substrate S thus cut.

Here, the transparent substrate S can be used as a plastic material, but mainly refers to a glass substrate of a glass material used in a display device. The glass substrate may be a general glass substrate on which a reinforcing layer is not formed (for example, a substrate called Soda Lime, a trade name of IOX-FS in the industry) and a tempered glass substrate (for example, Gorilla2 20 m, Dragon 20 Lt; RTI ID = 0.0 > um) < / RTI >

In general, the term 'transparent' as used in this specification and claims is not limited to 'a substrate made of a material that can transmit light entirely by itself,' and a translucent material made of a material that transmits only a part of light Quot; substrate ". Therefore, the transparent substrate itself includes all types of substrates that can confirm light from a liquid crystal device arranged over a transparent substrate through a transparent substrate even though most of the light is not transmitted through the transparent substrate. The 'cut surface' described in the present specification and claims is defined as a side surface surrounding the transparent substrate.

According to another embodiment of the present invention, the substrate cutting step S110 may be performed by cutting a transparent substrate (not shown), instead of irradiating the laser beam L 'onto the surface of the large transparent substrate So And then cutting it.

Although the laser beam irradiator 110 may be the same as the laser beam irradiator 130 for processing the side surface of the transparent substrate S, the process of cutting the transparent substrate S to a size that can be used for a display device The cutting laser beam irradiator 110 and the side processing laser beam irradiator 130 may be configured differently if the process of processing the side cut surface of the transparent substrate S is performed separately.

The cut surface finishing step S120 is a step of finishing the cut surface 12 along the center path Pc of the cut surface 12 positioned at the edge of the transparent substrate S cut or molded to a size usable in the display device, (99) while irradiating the laser beam (L1). The center path Pc of the center Lc of the first laser beam L1 is preferably formed along the center line 12c of the cut surface 12, It may be formed within a range (a hatched portion in Fig. 7) having a deviation corresponding to the thickness w1.

The step of removing the layer having fine irregularities remaining on the cut surface 12 of the transparent substrate S includes a laser beam irradiator 130 for irradiating the first laser beam L1 in a direction perpendicular to the cut surface 12, . ≪ / RTI > As described above, when the transparent substrate S is moved (12d) relative to the first laser beam L1 while irradiating the cut surface of the transparent substrate S with the first laser beam L1, The fine concavo-convex layer 12x remaining on the surface of the cut surface 12 is removed as shown in Fig. 11 while the energy of the laser beam L1 irradiated to the cut surface 12 is distributed, so that a clean surface 12o is exposed So as to reinforce the strength of the transparent substrate (S).

In other words, in general, a mobile display device such as a smart phone is used by a user for a long period of time and receives a shock or an external force due to falling. When a shock or an external force acts on the transparent substrate S, Cracks are generated in the fine concavities and convexities of the remaining edge side surfaces 12 at the time of fabrication and grow to cause breakage of the transparent substrate S. [ However, as described above, the laser beam L is irradiated to the cut surface 12 surrounding the periphery of the transparent substrate S so that the fine uneven layer 12x in which the fine irregularities are present is removed, and a clear surface 12o is exposed Even if an external force or an impact is applied to the transparent substrate S, an environment in which cracks are hard to be generated at the cut surface 12 of the edge becomes an environment in which resistance is high without being damaged by a larger impact or an external force.

On the other hand, the laser beam irradiator 130 for irradiating the cut surface 12 of the transparent substrate S with the laser beam L irradiates the laser beam L in the direction (z-axis direction) perpendicular to the cut surface 12 However, as shown in FIG. 6, a laser beam irradiator having a slight inclination (?) In the y-axis direction or a slight inclination (?) In the x-axis direction with respect to the direction perpendicular to the cut surface Convex layer 12x of the cut surface 12 while moving the laser beam irradiator 99 in a state in which the laser beam L is irradiated on the center path Pc of the cut surface 12 from the laser beam irradiator 130 ' It is preferable that the inclination (?,?) Is not more than 30 degrees with respect to the z-axis direction.

Reference numerals 131, 131 ', and 131' denote optical fibers that transmit laser beams to the laser beam irradiators 130, 130 ', and 130'.

Herein, the transparent substrate (S) is a glass material, a case, a laser beam emitter (130, 130 ', 130 ") of the first laser beam (L1) emitted from the carbon dioxide having a high absorption in glass material (CO ₂₎ laser 7, the focal point F of the first laser beam L1 emitted from the laser beam irradiators 130, 130 ', and 130 " Or from the cut surface 12 to the outside of the substrate S spaced apart from the substrate S by a height H1 of about 5 mm to 20 mm from the top (z-axis direction).

This is because when the focal point F of the first laser beam L1 is positioned below the cut surface 12 of the substrate S (the inside of the substrate S when the first laser beam is vertically irradiated) This is because the energy density of the laser beam L1 is locally concentrated on the side surface of the substrate S, and the fine uneven layer 12x can not be removed, thereby causing a problem of damaging the cut surface. On the other hand, when the focal point F of the first laser beam L1 is located above the cut surface 12 of the substrate S, the energy distribution of the first laser beam L passing through the focal point F is This is because it is advantageous to uniformly remove the fine uneven layer 12x.

As a result, not only the efficiency of removing the fine concavo-convex layer 12x of the transparent substrate S can be increased, but also the cutting surface finishing apparatus can be constructed at low cost.

As described above, the first laser beam L1 irradiating the cut surface 12 of the transparent substrate S is formed so that the first laser beam L1 is incident on the cut surface 12 12 form a predetermined area Lr around the beam center Lc.

On the other hand, the description of the substrate and the similar description that "the focal point of the laser beam is formed on the cut surface or the side of the side" described in the present specification and claims is such that "the focal point is smaller than the cut surface of the transparent substrate (S) It means that it is located close to ". Therefore, the description of "the focus of the laser beam is formed on the cut surface or the side of the side surface" is not necessarily limited to the fact that the focus is located physically above the cut surface of the transparent substrate S with respect to the vertical direction Do not.

Similarly, the description and the similar description of "the focal point of the laser beam is formed on the lower side of the cut surface or the side" described in the present specification and claims is based on the assumption that the focal point is "on the cut surface of the transparent substrate S It is located farther away than ". Therefore, the description of the substrate and the similar description in which "the focus of the laser beam is formed on the lower side of the cut surface or the side" is not limited to the fact that the focus is located physically below the cut surface of the transparent substrate S Do not.

The laser beam L from the laser beam irradiators 130, 130 ', and 130 "is irradiated to the cut surface 12 of the transparent substrate S at an output of 30 W to 300 W. [

When the output of the laser beam L is less than 30 W, it is difficult to completely remove the fine unevenness of the cut surface 12 with respect to the tempered glass substrate. When the output of the laser beam L is higher than 300 W, The output of the laser beam L may be maintained between 30W and 300W, since excessive energy may be locally concentrated to cause damage to the cut surface. However, according to another embodiment of the present invention, a transparent substrate having higher strength than that of existing tempered glass may be manufactured, or a laser beam having an output higher than 300 W or lower than 30 W may be used for a plastic transparent substrate.

On the other hand, the present invention is not limited to the use of the carbon dioxide laser beam, and according to another embodiment of the present invention, it is also possible to use other kinds of laser beams known in addition to the carbon dioxide laser beam in the side finishing process of the transparent substrate S have.

The chamfer forming step S130 may change the focal height and irradiation position of the first laser beam L1 irradiated from the laser beam irradiators 130, 130 ', and 130 " to change the second laser beam L2 into a transparent An inclined chamfer Cf is formed on the side surface 12 (or the cut surface) of the transparent substrate S while being moved (99) along the one side path Pe of the side surface 12 of the substrate S. [

To this end, the position of the laser beam irradiator 130, 130 ', 130 "is moved in the direction indicated by 130x so that the second laser beam L2 emitted from the laser beam irradiator is moved in the x- The position of the focus F with respect to the second laser beam L2 irradiated from the laser beam irradiators 130, 130 ', and 130 "is shifted by a distance H2 of 5 mm to 20 mm, (12). The second laser beam L2 has a beam center Lc positioned on the unilateral path Pe and is located on the side of the transparent substrate S by a predetermined area Lr with respect to the beam center Lc. (12). When the second laser beam L2 is moved in the y direction along the one side path Pe in this state, the side surface 12 of the transparent substrate S is irradiated with the second laser beam L2, A part of the edge of the transparent substrate S is separated in an inclined (?) Manner as shown in Fig. 9, so that the chamfer Cf is formed.

6) of the chamfer Cf formed by the second laser beam L2 is larger than the inclination angle of the second laser beam L2 (? In Fig. 9) Lt; / RTI > Thus, the inclination angle of the chamfer Cf can be adjusted.

Since the position of the focus F of the second laser beam L2 is positioned lower than the side face 12 of the transparent substrate S, the second laser beam L2 is irradiated perpendicularly to the side face 12 The position of the focus F of the second laser beam L2 is located inside the transparent substrate S as shown in FIG. When the position of the focus F of the second laser beam L2 is positioned below the side face 12 as described above and the second laser beam L2 is irradiated on the one side path Pe, The energy density of the Gaussian distribution gradually decreases as the radius reaching the irradiation area Lr is increased with reference to the center Lc of the lens L2 as shown in Fig. The width L of the chamfer Cf is determined in inverse proportion to the distance to the one side path Pe on which the second laser beam L2 is irradiated.

At this time, when the position of the focus F of the second laser beam L2 is separated from the side face 12 by a distance smaller than 5 mm, the output intensity of the second laser beam L2 is adjusted to the side 12, the energy density transmitted by the second laser beam L2 becomes very high, which increases the possibility of damaging the side surface 12, which is not preferable. When the focal point of the second laser beam L2 is farther than 20 mm from the side face 12, the area Lr irradiated with the second laser beam L2 on the side face 12 becomes excessively large In addition, since the second laser beam L2 reaches the side surface 12 with a distribution having a higher energy density at the central portion as compared with the peripheral portion, there is also a problem that the possibility of local damage to the side surface 12 is increased.

Therefore, when the position of the focal point F of the second laser beam L2 is spaced from the side surface 12 by a distance of 5 mm to 20 mm as compared with the side surface 12, a transparent glass material or a transparent glass material It is possible to process the inclined chamfer Cf in the side surface 12 of the substrate S with a low defect rate.

On the other hand, the one-side path Pe irradiated with the second laser beam L2 is located at a position spaced apart from the center line 12c of the transparent substrate S by a thickness w2 corresponding to 1/7 of the total thickness wo Axis direction from the outside of the y-axis. The outer end of the one side path Pe may be located at the edge of the transparent substrate S. This makes it possible to form a chamfer Cf inclined from the side surface 12 by the second laser beam L2 emitted from the second laser beam L2.

It is most effective that the second laser beam L2 for processing the inclined chamfer Cf at the edge of the transparent substrate S is irradiated on the side surface 12 of the transparent substrate S with an output intensity of 20 W to 70 W to be. If the output intensity of the second laser beam L2 is lower than 20 W, a mark such as a scratch may remain on the side surface 12 of the transparent substrate S of the glass material and the output intensity of the second laser beam L2 may be And when it is larger than 70 W, the side surface 12 of the transparent substrate S is pushed to cause defective micro cracks to be broken.

On the other hand, when the transparent substrate S is formed of a glass material, the second laser beam L2 is selected by a laser beam (for example, an infrared laser, a carbon dioxide laser) having a wavelength band of 8 mu m to 15 mu m . This is because the energy absorption rate of the laser beam with respect to the glass material is about 70% or more in the wavelength band of 8 탆 to 15 탆, and the energy of the second laser beam L2 to be irradiated is used for the transparent substrate S This is because the side surface 12 can be more efficiently machined.

When the transparent substrate S is formed of a glass material, the second laser beam L2 may be selected by a laser beam (for example, ultraviolet laser) having a wavelength band of 150 nm to 350 nm. In this wavelength band, since the energy absorption rate of the laser beam to the glass material is 95% or more, the energy efficiency can be increased. However, since the laser beam having a wavelength band of 150 nm to 350 nm is very expensive, not only the mass productivity is lowered but also the energy absorption rate is high, even if a slight error occurs in the position of the laser beam, There is a high possibility that defects are generated in the side processing of the substrate.

Therefore, in order to enable the side processing of the glass transparent substrate to be performed at a low yield and a high yield irrespective of the skill of the operator, the second laser beam L2 is selected as a laser beam having a wavelength band of 8 to 15 m desirable.

The side surface processing method (S100) of the transparent substrate according to the present invention may form a chamfer (Cf) inclined only at one side edge of the side surface (12) of the transparent substrate (S) The chamfer Cf may be formed on both side edges of the side surface 12 of the transparent substrate S as shown in Fig.

Hereinafter, the configuration of the side surface processing apparatus 100 of the transparent substrate S for a display device using the above-described processing method (S100) will be described in detail.

A side surface processing apparatus 100 for a transparent substrate according to an embodiment of the present invention includes a laser beam oscillator 120 for generating a laser beam and a laser beam transmission unit 120 for receiving the laser beam L from the laser beam oscillator 120, A beam irradiator 130 and a fixing table that moves together with the transparent substrate S by fixing the transparent substrate S cut to a size used for a display device and a fixing table that fixes the transparent substrate S are disposed on a straight line 140d And a detachable arm 180 for detaching and attaching the second fixing member 150 of the fixing table.

The laser beam oscillator 120 generates a carbon dioxide laser beam having a wavelength band of 8 탆 to 15 탆 and transmits the carbon dioxide laser beam to the laser beam irradiator 130 through the optical fiber 131.

The laser beam irradiator 130 irradiates the laser beam transmitted through the optical fiber 131 onto the side surface 12 of the transparent substrate S to form a fine concave and convex layer on the side surface of the transparent substrate S Or chamfering the chamfer Cf along the side edge of the transparent substrate S. To this end, the laser beam irradiator 130 is configured to adjust the focal heights of the laser beams L1, L2 (L) to be positioned above and below the side surface 12 by replacing or positioning the optical system.

The laser beam irradiator 130 is provided so as to be movable in the x-axis direction (130x in Fig. 4) or finely rotatable with respect to the y-axis to perform the side-finishing step S120 of the transparent substrate S The first laser beam L1 is irradiated to the center path Pc along the center line 12c of the transparent substrate S and the chamfer forming step S130 of the transparent substrate S is performed, Side path Pe separated from the center line 12c of the laser beam S by the first laser beam L2.

As a result, the transparent substrate S is cut by a laser beam or a saw with a single device, and the fine uneven layer 12x generated on the side surface of the transparent substrate S is removed The laser beam L1 is irradiated and removed, and an inclined chamfer Cf can be formed in a precise shape without cracking at the side edge of the transparent substrate S so as to be used in a display device. Accordingly, the fine unevenness layer generated on the side surface 12 as the cut surface of the transparent substrate S is removed to have high rigidity. At the same time, the chamfer Cf can be formed without cracking to be applicable to various display devices, Can be stably secured.

The fixing table is for moving (140d) and rotating (360) together while the transparent substrate (S) is fixed. The fixing table is composed of a first fixing member 140 and a second fixing member 150 which are in close contact with both surfaces of the transparent substrate S and are smaller in size than the transparent substrate S, The electromagnet 140a is provided in the first fixing member 140 and the second fixing member 150 is formed of a metal or a magnet acting on the electromagnet by the magnetic force. The transparent substrate S to be subjected to the side finishing process is brought into close contact with the one surface 140s of the first fixing member 140 with the robot arm so that the second fixing member 150 is fixed to the first fixing member 140, The first fixing member 140 and the second fixing member 140 are fixed by the magnetic force generated by applying a current to the electromagnet 140a of the first fixing member 140 in a state in which the press- 150 can be fixed to the transparent substrate S in a state where they are separated from each other.

4 and 5, the first fixing member 140 and the second fixing member 150 constituting the fixing table are formed such that the surface of the transparent substrate S, which is in contact with the surface of the transparent substrate S, The transparent substrate S is positioned between the first fixing member 140 and the second fixing member 150 and the side surface 12 of the transparent substrate S is exposed to the outside do.

The moving units 160 and 170 include a linear movement driving unit 160 for linearly moving the first fixing member 140 among the fixing stages 140 and 150 fixing the transparent substrate S, And a rotation driving unit 170 for rotating (360) the rotation shaft 160.

The linear movement driving unit 160 includes a linear driving motor 161 fixed to the rotary bracket 168 and a linear driving motor 161 rotated by the linear driving motor 161 and engaged with the female threaded portion of the first fixing member 140 And a support base 165 for rotatably supporting an end of the threaded rod 162. The threaded rod 162 is formed of a threaded screw thread 162 and a support rod 165 for rotatably supporting the end of the threaded rod 162. [ Therefore, when the linear driving motor 161 is rotated in the forward and reverse directions, the first fixing member 140 moves in the linear direction indicated by 140d in accordance with the rotation of the screw rod 162 in the forward and reverse directions, ). The rotation bracket 168 is provided with a guide rail 168g for guiding the linear movement of the first fixing member 140 so that the first fixing member 140 moves linearly in a predetermined path.

According to another embodiment of the present invention, the linear movement driving unit 160 may be configured to linearly move the first fixing member 140 on the principle of the linear motor in addition to the principle of the lead screw.

The rotation driving unit 170 rotates the rotation bracket 168 in which the rotation axis 172 of the rotation driving motor 171 is positioned. Thus, the transparent substrate S is rotated together with the rotation bracket 168 rotated by the rotation drive motor 171. Although the drawing shows a configuration in which the rotary shaft 172 rotated by the rotary drive motor 171 is fixed to the rotary bracket 168 and the rotary bracket 168 is directly driven and rotated by the rotary drive motor 171 According to another embodiment of the present invention, a power transmission means such as a speed reducer or a belt may be interposed between the rotation bracket 168 and the rotation drive motor 171.

The attaching / detaching arm 180 is installed so as to reciprocate toward the first fixing member 140 and is provided with an electromagnet 150a therein. The electromagnet 150a applies electric current to the electromagnet 150a, (150). That is, in order to fix the transparent substrate S to the fixing table, the plate surface of the transparent substrate S held by the robot arm (not shown) is positioned near one surface 140s of the first fixing member 140 A current is applied to the electromagnet 180a to move the attaching / detaching arm 180 toward the first fixing member 140 in a state where the second fixing member 150 is attached to the attaching / detaching arm 180 by a magnetic force The intensity of the electric current supplied to the electromagnet 180a of the attaching / detaching arm 180 is gradually lowered while the electric current is applied to the electromagnet 140a of the first fixing member 140, The second fixing member 150 is brought into close contact with the first fixing member 140 by the magnetic force of the first fixing member 140 so that the entire side surface 12 of the transparent substrate S is exposed And is fixed between the first fixing member 140 and the second fixing member 150.

One surface 140s of the first fixing member 140 protrudes to the right from the side surfaces 161s and 165s of the linear driving motor 161 and the support table 165 with reference to FIG. Therefore, even if the first fixing member 140 and the linear movement driving unit 160 rotate by the rotation driving motor 171, the laser beam L (L) is emitted from the laser irradiator 130 toward the side surface 12 of the transparent substrate S, ) Can be examined. At the same time, the position of one surface 140s of the first fixing member 140 is determined such that the laser beam L emitted from the laser beam irradiator 130 reaches the side surface 12 of the transparent substrate S.

9, in order to prevent the position of the transparent substrate S from being changed by the rotation drive motor 171 that rotates the fixing tables 140 and 150, A position where the end 173a of the extending portion 173 extending in the radial direction from the rotating shaft 172 'is located only in a small gap while a cross section of the rotating shaft 172' connected to the rotating shaft 172 ' And may be configured to limit the occurrence of a deviation by the control unit 190. Accordingly, even if the transparent substrate S rotates or moves due to rotation of the rotation drive motor 171, the position irradiated from the laser beam irradiator 130 is kept unchanged.

The working principle of the side processing apparatus 100 of the transparent substrate S for a display device according to one embodiment of the present invention constructed as above will be described in detail.

Step 1 : First, the second fixing member 150 is brought into close contact with the opposite plate surface of the transparent substrate S in a state in which the plate surface of the transparent substrate S is in contact with one surface 140s of the first fixing member 140 The transparent substrate S is fixed in position.

Step 2 : Thereafter, the linear movement driving unit 160 causes the first laser beam L to irradiate the center path Pc of the side surface 12 of the transparent substrate S from the laser beam irradiator 130 The transparent substrate S is linearly moved 99 together with the fixing tables 140 and 150 in the y-axis direction at a speed of 10 mm / sec to 20 mm / sec. Thereby, the fine unevenness removing process is performed on one side surface 12 of the transparent substrate S.

Next, the rotation bracket 168 is rotated by 90 degrees by the rotation driving unit 170 without disassembling the first fixing member 140 and the second fixing member 150 fixing the transparent substrate S , The laser beam L is irradiated to the side surface 12 of the vertex portion of the transparent substrate S to remove the fine uneven layer 12x.

The fixing bars 140 and 150 are linearly moved so that the first laser beam L1 irradiated from the laser beam irradiator 130 is irradiated along the other side of the transparent substrate S to which the first laser beam L1 is not irradiated, The fine irregularities are removed from the other side surface of the substrate S.

Step 3 : Thereafter, the second laser beam L2 whose focus height, irradiation position and output intensity of the laser beam L irradiated from the laser beam irradiator 130 is adjusted to 20W to 70W is applied to the side surface 12 The transparent substrate S is moved in the y-axis direction at a speed of 10 mm / sec to 20 mm / sec by a linear movement driving unit 160 along with the fixed rods 140 and 150 ) So that the chamfered portion Cf of the side surface 12 of the transparent substrate S is processed without cracks.

Next, the rotation bracket 168 is rotated by 90 degrees by the rotation driving unit 170 without disassembling the first fixing member 140 and the second fixing member 150 fixing the transparent substrate S , A laser beam (L) is applied to the side surface (12) of the vertex portion of the transparent substrate (S) to form an inclined chamfer (Cf) on the side of the vertex.

Next, the fixing tables 140 and 150 are linearly moved so that the second laser beam L irradiated from the laser beam irradiator 130 is irradiated along the other side of the transparent substrate S to which the laser beam L is not irradiated, Thereby forming a sloping chamfer Cf with respect to the other side surface of the substrate S.

9, when the chamfer Cf is to be formed on both side edges of the transparent substrate S as an object to be processed, the irradiation position of the laser beam L irradiated from the laser beam irradiator 130 After the linear motion driving unit 160 and the rotation driving unit 170 are operated, the angle of inclination of the other side surface 12 of the transparent substrate S is changed to the one side surface Pe of the side surface 12, Thereby forming a chamfer Cf.

Step 4 : Repeating steps 3 and 4 in this manner, the first fixing member 140 and the second fixing member 150 fixing the transparent substrate S are removed without removing the transparent substrate S The step of removing the fine concavo-convex layer 12x by the laser beam L can be performed on the side surface 12 of the entire perimeter of the concave portion 12a.

In the above process, the position of the laser beam irradiator 130 is fixed, and the fixing units 140 and 150 for fixing the transparent substrate S are linearly moved and rotated by the moving units 160 and 170, (L) along the side surface (12) of the substrate (S). This makes it possible to remove all the fine unevenness remaining on the side surface 12 of the entire circumference of the transparent substrate S even if the position fixing operation of the transparent substrate S is performed only once, It is possible to obtain the advantage that the side chamfering step S120 and the chamfer forming step S130 of the transparent substrate S can be efficiently performed in a shorter time.

Example  1: Finishing process

On the other hand, according to the present invention, a carbon dioxide laser beam with a power of 120 W is irradiated onto a transparent substrate S made of a glass material at a power of 130 W to produce a cut surface (side) photograph before and after the side surface finishing process, 12D. ≪ / RTI > 12A is a general glass substrate of the trade name "Soda Lime" used in a mobile display device, FIG. 12B is a general glass substrate of a trade name "IOX-FS " used in a mobile display device, Quot; Gorilla2 20 mu m ", and Fig. 12B is a tempered glass substrate called "Dragon 20 mu m " The Grollia 2 20 μm and the Dragon 20 μm shown in FIGS. 12C and 12D are formed with a reinforcing layer having a thickness of 20 μm.

Before applying the side finishing process according to the present invention, it can be seen that fine irregularities are formed on the sides of all the transparent substrates S shown in FIGS. 12A to 12D. However, after the side finishing process according to the present invention was performed, it was confirmed that the rough fine unevenness layer was completely removed.

In addition, a rigidity test was performed on the transparent substrate before and after applying the side finishing process according to the present invention, as shown in FIG. IOX-FS "in such a manner that the force F is gradually increased at the central portion of the transparent substrate S until the time when the transparent substrate S is broken by placing the transparent substrate S on the stand spaced apart from each other, (A central portion) of about 0.8 mm with respect to a force F of up to 7.53 kgf was generated before the side finishing process according to the present invention was performed, ), It was confirmed that after the side finishing processing process according to the present invention, it is able to withstand a force F of up to 36.92 kgf until a flexural displacement (center portion) of about 3.496 mm is allowed (Fig. 14B) .

That is, as shown in the table summarized in FIG. 14C, it has been confirmed experimentally that the rigidity of the transparent substrate S for a display device is improved by about five times when the lateral finishing process according to the present invention is performed.

Example  2: Chamfer  Forming process

The carbon dioxide second laser beam L2 having a wavelength of 9.4 占 퐉 and a frequency of 40 kHz is applied to a transparent substrate S of a glass material having a thickness of 0.7 mm which has undergone the side surface finishing step S120 according to the present invention, Was moved to a normal glass substrate called Soda Lime at a power of 26.4 W at a power of 58 W while moving the focal point F at a speed of 10 mm / sec to 20 mm / sec while maintaining a distance of 5 mm to 20 mm from the side face 16A and 16D are photographs of side surfaces on which a sloping chamfer Cf is formed by irradiating a tempered glass substrate called Gorilla2 20 mu m, respectively. (Fig. 16A is a general glass substrate of the trade name "Soda Lime" used in a mobile display, and Fig. 16D is a tempered glass substrate of a trade name "Gorilla2 20 m"

It can be confirmed that forming the chamfer on the side surface of the glass substrate S is cleanly processed without cracks under the above conditions. In the case of the tempered glass substrate, a chamfer having a cleaner processed surface was formed when the sample was irradiated with a slightly higher output intensity than a general glass substrate.

On the other hand, as a result of performing the rigidity test on the chamfered glass substrate as described above as shown in FIG. 13, the general surface glass substrate of "Soda Lime" is subjected to the side finishing and chamfer forming processes according to the present invention (Center portion) of about 0.8 mm with respect to the force F up to 7.53 kgf was generated (Fig. 14 (a)). After performing the side finishing process and the chamfer forming process according to the present invention, (Center portion) of about 2.757 mm with respect to a force F up to about 64 kgf (Fig. 16B and Fig. 16C).

That is, in the case of performing the side finishing process and the chamfer forming process according to the present invention, although the strength may be reduced by forming a chamfer at an edge, the rigidity of the transparent substrate S for a display device is still improved by 4.5 to 5 times Can be maintained.

Comparative Example  1: Change in focus height

On the other hand, a carbon dioxide second laser beam L2 having a wavelength of 9.4 mu m and a frequency of 40 kHz is applied to a glass substrate S having a thickness of 0.7 mm, which has been subjected to the surface finishing step (S120) Was moved to a normal glass substrate Soda Lime at a power of 26.4 W at a power of 58 W while moving at a speed of 10 mm / sec to 20 mm / sec in a state in which the focal point F was kept spaced apart by 18 mm and 25 mm from the side face 12, And a Gorilla2 20 mu m reinforced glass substrate, respectively, and photographs taken on the side where the inclined chamfer Cf is formed are shown in Figs. 17A to 17B.

It was confirmed that the micro-cracks such as micro-cracks or cracks that are scratched on the surface are generated in the second laser beam L2 at positions where the focus F is spaced apart by 15 mm from the side surface 12 by 18 mm and 25 mm, respectively . In the case where microcracks are formed on the side surface of the transparent substrate S as described above, the cracks grow even after a slight impact after being mounted on the display device, resulting in a total breakage.

Example  3: Change in frequency

On the other hand, a carbon dioxide second laser beam L2 having a wavelength of 9.4 mu m is focused on a transparent substrate S of a glass material having a thickness of 0.7 mm, which has been subjected to the side finishing step S120 according to the present invention, While moving at a speed of 10 mm / sec to 20 mm / sec while maintaining the range of 5 mm to 15 mm from the side surface 12, a glass substrate of Soda Lime and a glass substrate of Gorilla2 Figs. 18A to 18D show photographed photographs of the side where the inclined chamfer Cf is formed by irradiating the second laser beam L having the frequency of 50 kHz and the frequency of 33 kHz, respectively. (Figs. 18A and 18B are general glass substrates of the trade name "Soda Lime" used in mobile display devices, and Figs. 18C and 18D are tempered glass substrates of trade name "Gorilla2 20 mu m "

As a result, microcracks such as scratches were not generated on the side of the general glass substrate called "Soda Lime " irrespective of frequency variations, as shown in Figs. 18A (50 kHz) and Fig. 18B (33 kHz). Microcracks such as scratches were not generated on the side of the tempered glass substrate called "Gorilla2 20 占 퐉 " irrespective of frequency variations, as shown in Figs. 18c (50 kHz) and 18d (33 kHz).

Comparative Example  2: Change in output intensity

On the other hand, a carbon dioxide second laser beam L2 having a wavelength of 9.4 mu m is focused on a transparent substrate S of a glass material having a thickness of 0.7 mm, which has been subjected to the side finishing step S120 according to the present invention, The glass substrate was irradiated with a power of 17 W and a power of 58 W on a general glass substrate of Soda Lime while moving at a speed of 10 mm / sec to 20 mm / sec while maintaining a range of 5 mm to 15 mm from the side surface 12, Figs. 19A to 19D show photographed photographs of the side where the inclined chamfer Cf is formed by irradiating the second laser beam L2 to the tempered glass substrate of Gorilla2 of 20 mu m in intensity, respectively. (Figs. 19A and 19B are general glass substrates of the trade name "Soda Lime" used in the mobile display device, and Figs. 19C and 19D are tempered glass substrates of the trade name "Gorilla2 20 mu m "

As a result, as shown in Fig. 19A (17W) and Fig. 19B (58W) for a general glass substrate called "Soda Lime ", when the output intensity deviates from 20W to 50W, micro- Lt; / RTI > As shown in Fig. 19C (35W) and Fig. 19D (75W), for the tempered glass substrate of "Gorilla2 20 mu m ", milling or microscopic cracks were generated on the side of the range in which the output intensity deviated from 40W to 70W .

Comparative Example  3: Change of irradiation position

On the other hand, a carbon dioxide second laser beam L2 having a wavelength of 9.4 mu m is focused on a transparent substrate S of a glass material having a thickness of 0.7 mm, which has been subjected to the side finishing step S120 according to the present invention, Soda Lime and a tempered glass such as Gorilla2 of 20 mu m were respectively irradiated at a power of 26.4 W and 58 W while moving at a speed of 10 mm / sec to 20 mm / sec while maintaining a range of 5 mm to 15 mm from the side surface 12, The second laser beam L2 is irradiated to the substrate so that the center of the laser beam L2 is located on the one side of the distance w2 from the center line 12c by 300 mu m from the center line 12c and on the outside of the substrate of 600 mu m and 1000 mu m, 20A to 20D show photographed photographs of the side where the inclined chamfer Cf is formed. (Figs. 20A to 20C are general glass substrates of the trade name "Soda Lime" used in mobile display devices, and Figs. 20D to 20F are tempered glass substrates of trade name "Gorilla2 20 mu m "

As a result, when the second laser beam L2 is irradiated to the one side path Pe separated from the center line 12c by 300 占 퐉 (0.42 of the substrate thickness w0) for a general glass substrate called "Soda Lime" When the second laser beam L2 is irradiated at a position spaced apart from the center line 12c by 600 m (0.85 of the substrate thickness) and 1000 m (1.42 of the substrate thickness), serious cracks As shown in FIG.

In the case of irradiating the second laser beam L2 onto the one side path Pe separated by 300 占 퐉 (0.42 of the substrate thickness w0) from the center line 12c for the tempered glass substrate of "Gorilla2 20 占 퐉" When the second laser beam L2 is irradiated at a position spaced apart from the center line 12c by 600 m (0.85 of the substrate thickness) and 1000 m (1.42 of the substrate thickness), serious cracks As shown in FIG.

Example  4: Change in wavelength band

On the other hand, a carbon dioxide second laser beam L2 having a wavelength of 10.6 mu m is focused on a glass substrate S having a thickness of 0.7 mm, which has been subjected to the side finishing step S120 according to the present invention, While moving at a speed of 10 mm / sec to 20 mm / sec while maintaining a range of 5 mm to 15 mm from the side surface 12, the glass substrate was heated at 37.1 W and at a power of 54 W on a general glass substrate called Soda Lime and a tempered glass substrate 21A and 21B are photographs taken on the side where the inclined chamfer Cf is formed by irradiating the second laser beam L, respectively. (Fig. 21A is a general glass substrate of the trade name "Soda Lime" used in a mobile display device, and Fig. 21B is a tempered glass substrate of a trade name "Gorilla2 20 m"

As a result, even if the wavelength band of the second laser beam L2 was changed to 10.6 mu m, microcracks such as scratches were not generated on the side surface of the glass transparent substrate S.

Example  5: Change in wavelength band

On the other hand, the ultraviolet second laser beam L2 having a wavelength of 355 nm is focused on a glass substrate S of 0.7 mm in thickness, which has been subjected to the side finishing step S120 according to the present invention, While moving in the range of 5 mm to 15 mm from the side surface 12 while moving at a speed of 2.8 mm / sec, a general laser beam of Soda Lime and a laser beam L of Gorilla2 22A and 22B are photographs taken on the side where the inclined chamfer Cf is formed. (Fig. 22A is a general glass substrate used under the trade name "Soda Lime" used in a mobile display device, and Fig. 22B is a tempered glass substrate with a trade name "Gorilla2 20 m"

As a result, even if the wavelength band of the second laser beam L2 is changed to 350 nm, the output intensity is largely reduced to 13 W and the moving speed of the second laser beam L2 and the substrate side 12 is reduced to 1/5 to 1 / 10, it was confirmed that a clean chamfer can be formed without microcracks. However, since the moving speed is greatly lowered, the problem of productivity deterioration can not be avoided.

Comparative Example  4: Change of wavelength band and moving speed

On the other hand, the ultraviolet second laser beam L2 having a wavelength of 355 nm is focused on a glass substrate S of 0.7 mm in thickness, which has been subjected to the side finishing step S120 according to the present invention, While moving in the range of 5 mm to 15 mm from the side surface 12, the glass substrate was moved at a speed of 2.0 mm / sec and 4 mm / sec, respectively, and a 13 W output was performed on a general glass substrate called Soda Lime and a tempered glass substrate called Gorilla2 2 (a) to 23 (d) are photographs of photographs taken on the side where the inclined chamfer Cf is formed by irradiating the two laser beams L, respectively. (Figs. 23A and 23B are general glass substrates of the trade name "Soda Lime" used in the mobile display device, and Figs. 23C and 23D are tempered glass substrates of the trade name "Gorilla2 20 mu m "

As a result, when the ultraviolet laser beam having the second laser beam L2 of 355 nm is used, even if there is a deviation of 0.8 mm / sec compared to 2.8 mm / sec, It was confirmed that cracks occur very much in a general glass substrate called "Soda Lime" and a tempered glass substrate called "Gorilla2 20 μm". Therefore, it has been confirmed that it is very difficult to form the chamfer on the side of the glass transparent substrate S according to the skill of the operator. This is presumably because the energy absorption rate of the laser beam is 90% or more for the glass substrate in the wavelength band of 355 nm, which is very sensitive.

Comparative Example  5: Change in wavelength band

On the other hand, a green second laser beam L2 having a wavelength of 532 nm is focused on a transparent glass substrate S having a thickness of 0.7 mm which has been subjected to the side finishing step S120 according to the present invention, While moving in the range of 5 mm to 15 mm from the side surface 12, while moving at various moving speeds, a second laser beam L was irradiated onto a tempered glass substrate called Soda Lime and a tempered glass substrate called Gorilla2 Is shown in Fig. 24, which is a photograph taken on the side where the inclined chamfer Cf is formed. (Fig. 24 is a general glass substrate called "Soda Lime"

As a result, in the case of using the green laser beam with the second laser beam L2 of 532 nm, even if the various moving speeds and the like are changed, the conditions for chamfering without cracking on both the general glass substrate and the tempered glass substrate Could not be found. It is assumed that the energy absorption rate of the laser beam to the glass substrate is as low as 15% or less in the wavelength band of 532 nm.

As described above, according to the present invention, in the process of cutting a large-size substrate into a size of a transparent substrate used for a display device by using a laser beam, a saw or the like, fine irregularities, It is possible to obtain an advantageous effect of removing at a high yield within a short time by the cutting surface finishing step.

Among other things, the present invention is capable of processing a precisely shaped sloping chamfer while accommodating the focal height and path error of the laser beam, regardless of proficiency, and can further improve flexural rigidity while processing without microcracks Thus, it is possible to obtain an advantageous effect that the display device can be utilized in a form having high strength and durability.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

12: side, cut surface 12c: center line
100: substrate side processing device 110: cutting laser beam irradiator
120: laser beam oscillator 130: laser beam irradiator
140: first fixing member 140a: electromagnet
150: second fixing member 160: linear movement driving unit
170: rotation driving part 180:
L: laser beam L1: first laser beam
L2: second laser beam S: transparent substrate
wo: substrate thickness Pc: center path
Pe: One side path

Claims (28)

A method of processing a transparent substrate for a display device,
A substrate cutting step of cutting a large substrate so as to be a transparent substrate having a size used for a display device;
A cutting surface finishing step of finishing the cut surface by irradiating the cut surface with the first laser beam so that the center of the first laser beam moves along a center path along the cut surface of the transparent substrate;
The second laser beam is irradiated onto the cut surface in such a manner that the center of the second laser beam moves along one side path on the cut surface deviated to one side from the center line of the transparent substrate toward the surface of the transparent substrate, Forming a chamfer forming a chamfer that is inclined along an edge;
Wherein the transparent substrate is a transparent substrate.
The method according to claim 1,
Wherein the chamfer forming step irradiates the second laser beam onto the cut surface in such a manner that the second laser beam reaches the cut surface before the second laser beam reaches the focus.
3. The method of claim 2,
And the focal point of the second laser beam is positioned within the transparent substrate spaced by 5 mm to 20 mm from the cut surface.
The method according to claim 1,
Wherein the one side path is spaced apart from the center line by at least 1/7 of the thickness wo of the transparent substrate.
The method according to claim 1,
Wherein the center path is in a range spaced apart from a center line of the cut surface by 1/6 or less of the thickness wo of the transparent substrate.
The method according to claim 1,
Wherein the second laser beam is moved along the cut surface at a speed of 10 mm / sec to 20 mm / sec.
The method according to claim 1,
And the second laser beam is irradiated perpendicularly to the cut surface.
The method according to claim 1,
Wherein the second laser beam is irradiated obliquely on the cut surface, wherein the tilt angle forms an acute angle toward the surface of the transparent substrate.
The method according to claim 1,
Wherein the cut surface is arranged around the transparent substrate.
The method according to claim 1,
Wherein the transparent substrate is a glass material.
11. The method of claim 10,
Wherein the transparent substrate is a tempered glass substrate having a reinforcing layer formed to a certain thickness.
12. The method according to any one of claims 1 to 11,
Wherein at least one of the first laser beam and the second laser beam is a carbon dioxide (CO ₂ ) laser beam.
12. The method according to any one of claims 1 to 11,
Wherein at least one of the first laser beam and the second laser beam has a wavelength band of 8 占 퐉 to 15 占 퐉.
12. The method according to any one of claims 1 to 11,
Wherein the first laser beam is irradiated on the cut surface at an output intensity of 30 W to 300 W.
12. The method according to any one of claims 1 to 11,
And the second laser beam is irradiated onto the cut surface at an output intensity of 20 W to 70 W.
12. The method according to any one of claims 1 to 11,
Wherein chamfers are formed on both side edges of the cut surface of the transparent substrate.
A cutting surface finishing apparatus for a transparent substrate for a display device,
A laser beam oscillator for generating a laser beam;
A laser beam irradiator for receiving a laser beam from the laser beam oscillator and irradiating the laser beam;
A fixing table for fixing the transparent substrate cut to a size used in the display device;
And moving the laser beam irradiating device in such a manner that a laser beam oscillated from the laser beam irradiator moves along a center path along a cut surface of the transparent substrate and moves the laser beam irradiator in the thickness direction of the cut surface, A moving unit for moving the moving unit;
The first laser beam irradiated from the laser beam irradiator is moved along the cut surface of the transparent substrate to finish the cut surface and then the center of the second laser beam irradiated from the laser beam irradiator And a chamfer is formed on one side of the cut surface while moving along a one-side path shifted to one side from the center line of the cut surface.
18. The method of claim 17,
Wherein the fixing table has a first fixing member and a second fixing member which are in contact with both surfaces of the transparent substrate with the transparent substrate interposed therebetween and a contact surface of the first fixing member and the second fixing member is in contact with the transparent substrate Wherein the transparent substrate is formed in a small size so that the cut surface located at the edge of the transparent substrate is fixed to the fixing table so as to be exposed to the outside of the first fixing member and the second fixing member. Device.
19. The method of claim 18,
Wherein at least one of the first fixing member and the second fixing member is provided with an electromagnet for pulling the first fixing member and the second fixing member.
19. The method of claim 18,
Wherein the second laser beam is focused on the transparent substrate while moving along the one side path while being positioned within the transparent substrate spaced by 5 mm to 20 mm from the cut surface. Processing equipment.
21. The method of claim 20,
Wherein the one side path is spaced apart from the center line by one seventh or more of the thickness wo of the transparent substrate.
18. The method of claim 17,
Wherein the center path is within a range that is spaced from the center line of the cut surface by 1/6 or less of the thickness wo of the transparent substrate.
18. The method of claim 17,
Wherein the moving unit moves at least one of the first laser beam and the second laser beam so that a relative speed with respect to the transparent substrate is a speed of 10 mm / sec to 20 mm / sec. Side working device.
24. The method according to any one of claims 17 to 23,
Wherein at least one of the first laser beam and the second laser beam is a carbon dioxide (CO ₂ ) laser beam.
24. The method according to any one of claims 17 to 23,
And the second laser beam has a wavelength band of 8 占 퐉 to 15 占 퐉.
24. The method according to any one of claims 17 to 23,
Wherein the first laser beam is irradiated on the cut surface at an output intensity of 30 W to 300 W.
24. The method according to any one of claims 17 to 23,
And the second laser beam is irradiated on the cut surface at an output intensity of 20 W to 70 W.
24. The apparatus according to any one of claims 17 to 23,
A linear motion driving unit for linearly moving the fixed frame;
A rotation driving unit for rotating the fixing table and the linear motion driving unit;
Wherein the laser beam irradiator irradiates a laser beam onto a cut surface of the transparent substrate in a fixed position and the transparent substrate fixed to the fixing table is linearly moved and rotated by the linear movement driving unit and the rotation driving unit, Wherein the cut surface of the transparent substrate is finished and a chamfer is formed.

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