CN1240167C - 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 - Google Patents
用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 Download PDFInfo
- Publication number
- CN1240167C CN1240167C CNB01808964XA CN01808964A CN1240167C CN 1240167 C CN1240167 C CN 1240167C CN B01808964X A CNB01808964X A CN B01808964XA CN 01808964 A CN01808964 A CN 01808964A CN 1240167 C CN1240167 C CN 1240167C
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- tunable laser
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002310 reflectometry Methods 0.000 claims abstract description 58
- 230000008878 coupling Effects 0.000 claims abstract description 7
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- 238000000034 method Methods 0.000 claims description 14
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- 230000008859 change Effects 0.000 description 5
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biophysics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
- Aerials With Secondary Devices (AREA)
- Optical Elements Other Than Lenses (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20305200P | 2000-05-04 | 2000-05-04 | |
US60/203,052 | 2000-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1428018A CN1428018A (zh) | 2003-07-02 |
CN1240167C true CN1240167C (zh) | 2006-02-01 |
Family
ID=22752272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01808964XA Expired - Lifetime CN1240167C (zh) | 2000-05-04 | 2001-05-04 | 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6590924B2 (zh) |
EP (1) | EP1281221B8 (zh) |
JP (1) | JP4989834B2 (zh) |
CN (1) | CN1240167C (zh) |
AT (1) | ATE403248T1 (zh) |
AU (1) | AU2001259503A1 (zh) |
CA (1) | CA2405852A1 (zh) |
DE (1) | DE60135106D1 (zh) |
WO (1) | WO2001084682A2 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7836648B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group | Flooring system having complementary sub-panels |
US7836649B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group, Inc. | Flooring system having microbevels |
US8112958B2 (en) | 2002-05-03 | 2012-02-14 | Faus Group | Flooring system having complementary sub-panels |
US8181407B2 (en) | 2002-05-03 | 2012-05-22 | Faus Group | Flooring system having sub-panels |
US8201377B2 (en) | 2004-11-05 | 2012-06-19 | Faus Group, Inc. | Flooring system having multiple alignment points |
US8209928B2 (en) | 1999-12-13 | 2012-07-03 | Faus Group | Embossed-in-registration flooring system |
US8875460B2 (en) | 1999-11-05 | 2014-11-04 | Faus Group, Inc. | Direct laminated floor |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7167495B2 (en) | 1998-12-21 | 2007-01-23 | Finisar Corporation | Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers |
US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US7286585B2 (en) | 1998-12-21 | 2007-10-23 | Finisar Corporation | Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region |
US7257143B2 (en) | 1998-12-21 | 2007-08-14 | Finisar Corporation | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
US6975660B2 (en) | 2001-12-27 | 2005-12-13 | Finisar Corporation | Vertical cavity surface emitting laser including indium and antimony in the active region |
US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
US7435660B2 (en) | 1998-12-21 | 2008-10-14 | Finisar Corporation | Migration enhanced epitaxy fabrication of active regions having quantum wells |
US20030219917A1 (en) | 1998-12-21 | 2003-11-27 | Johnson Ralph H. | System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers |
US7408964B2 (en) | 2001-12-20 | 2008-08-05 | Finisar Corporation | Vertical cavity surface emitting laser including indium and nitrogen in the active region |
US6728279B1 (en) * | 1999-05-17 | 2004-04-27 | Interuniversitair Microelektronica Centrum | Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices |
GB2377549A (en) * | 2001-07-14 | 2003-01-15 | Marconi Caswell Ltd | Tuneable laser |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US7295586B2 (en) | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
CN101432936B (zh) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US20060104321A1 (en) * | 2004-11-15 | 2006-05-18 | Lightip Technologies Inc. | Q-modulated semiconductor laser with electro-absorptive grating structures |
JP4657853B2 (ja) | 2005-08-11 | 2011-03-23 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法 |
EP1978612B1 (en) * | 2007-04-05 | 2017-08-16 | Sumitomo Electric Device Innovations, Inc. | Optical semiconductor device and method of controlling the same |
EP2174392B1 (en) * | 2007-08-02 | 2020-04-29 | EFFECT Photonics B.V. | Semiconductor laser device |
JP2014522105A (ja) * | 2011-07-22 | 2014-08-28 | インサイト フォトニック ソリューションズ,インコーポレイテッド | 波長連続及び規定された時間に対する波長掃引をレーザーから動的及び適応的に生成するシステム及び方法 |
JP2013219192A (ja) * | 2012-04-09 | 2013-10-24 | Fujitsu Ltd | 半導体レーザ |
JP6241919B2 (ja) * | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 光学半導体デバイス |
JP2016051807A (ja) | 2014-08-29 | 2016-04-11 | 富士通オプティカルコンポーネンツ株式会社 | 半導体レーザ |
US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
JP6684094B2 (ja) | 2015-03-20 | 2020-04-22 | 古河電気工業株式会社 | 波長可変レーザ素子およびレーザモジュール |
WO2016199903A1 (ja) | 2015-06-10 | 2016-12-15 | 古河電気工業株式会社 | パルスレーザ装置 |
CN105356292B (zh) * | 2015-11-30 | 2018-11-02 | 武汉电信器件有限公司 | 一种可调谐波长半导体激光器 |
CN106981819B (zh) | 2016-01-15 | 2019-05-28 | 华为技术有限公司 | 一种可调激光器及其控制方法 |
CN106941241B (zh) * | 2016-10-21 | 2019-06-04 | 武汉光迅科技股份有限公司 | 一种基于ebl的激光器加工方法及其应用方法 |
CN111162454B (zh) * | 2020-01-02 | 2021-03-12 | 中国科学院半导体研究所 | 一种宽波段调谐系统及调谐方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622672A (en) | 1984-01-20 | 1986-11-11 | At&T Bell Laboratories | Self-stabilized semiconductor lasers |
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
EP0391334B1 (en) * | 1989-04-04 | 1994-08-31 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and wavelength selective fitter, and methods of driving the same |
US5088097A (en) | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
US5325392A (en) * | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
JPH0653591A (ja) * | 1992-08-03 | 1994-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 光周波数変換素子 |
JP3086767B2 (ja) * | 1993-05-31 | 2000-09-11 | 株式会社東芝 | レ−ザ素子 |
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
JP3226073B2 (ja) | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | 偏波変調可能な半導体レーザおよびその使用法 |
US5841799A (en) | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
US5579328A (en) | 1995-08-10 | 1996-11-26 | Northern Telecom Limited | Digital control of laser diode power levels |
US6100975A (en) * | 1996-05-13 | 2000-08-08 | Process Instruments, Inc. | Raman spectroscopy apparatus and method using external cavity laser for continuous chemical analysis of sample streams |
US5715271A (en) | 1996-08-01 | 1998-02-03 | Northern Telecom Limited | Polarization independent grating resonator filter |
SE519081C3 (sv) | 1998-01-21 | 2003-02-19 | Altitun Ab | Förfarande och anordning för optimering av lasrars operationspunkt, jämte anordning |
GB9809583D0 (en) * | 1998-05-06 | 1998-07-01 | Marconi Gec Ltd | Optical devices |
TW393813B (en) * | 1998-12-03 | 2000-06-11 | Nat Science Council | Adjustable monolithic multi-wavelength laser arrays |
US6421365B1 (en) * | 1999-11-18 | 2002-07-16 | Lambda Physik Ag | Narrow band excimer or molecular fluorine laser having an output coupling interferometer |
US6349106B1 (en) * | 1999-09-02 | 2002-02-19 | Agility Communications, Inc. | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
-
2001
- 2001-05-04 CA CA002405852A patent/CA2405852A1/en not_active Abandoned
- 2001-05-04 AU AU2001259503A patent/AU2001259503A1/en not_active Abandoned
- 2001-05-04 US US09/848,791 patent/US6590924B2/en not_active Expired - Lifetime
- 2001-05-04 EP EP01933039A patent/EP1281221B8/en not_active Expired - Lifetime
- 2001-05-04 DE DE60135106T patent/DE60135106D1/de not_active Expired - Lifetime
- 2001-05-04 CN CNB01808964XA patent/CN1240167C/zh not_active Expired - Lifetime
- 2001-05-04 AT AT01933039T patent/ATE403248T1/de not_active IP Right Cessation
- 2001-05-04 JP JP2001581391A patent/JP4989834B2/ja not_active Expired - Lifetime
- 2001-05-04 WO PCT/US2001/014505 patent/WO2001084682A2/en active Application Filing
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8875460B2 (en) | 1999-11-05 | 2014-11-04 | Faus Group, Inc. | Direct laminated floor |
US8209928B2 (en) | 1999-12-13 | 2012-07-03 | Faus Group | Embossed-in-registration flooring system |
US7836648B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group | Flooring system having complementary sub-panels |
US7836649B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group, Inc. | Flooring system having microbevels |
US8099919B2 (en) | 2002-05-03 | 2012-01-24 | Faus Group | Flooring system having microbevels |
US8112958B2 (en) | 2002-05-03 | 2012-02-14 | Faus Group | Flooring system having complementary sub-panels |
US8181407B2 (en) | 2002-05-03 | 2012-05-22 | Faus Group | Flooring system having sub-panels |
US8448400B2 (en) | 2002-05-03 | 2013-05-28 | Faus Group | Flooring system having complementary sub-panels |
US8201377B2 (en) | 2004-11-05 | 2012-06-19 | Faus Group, Inc. | Flooring system having multiple alignment points |
Also Published As
Publication number | Publication date |
---|---|
WO2001084682A3 (en) | 2002-04-11 |
WO2001084682A2 (en) | 2001-11-08 |
EP1281221B1 (en) | 2008-07-30 |
JP4989834B2 (ja) | 2012-08-01 |
AU2001259503A1 (en) | 2001-11-12 |
CN1428018A (zh) | 2003-07-02 |
ATE403248T1 (de) | 2008-08-15 |
DE60135106D1 (de) | 2008-09-11 |
JP2003533037A (ja) | 2003-11-05 |
US6590924B2 (en) | 2003-07-08 |
US20020105990A1 (en) | 2002-08-08 |
EP1281221B8 (en) | 2008-10-15 |
EP1281221A2 (en) | 2003-02-05 |
CA2405852A1 (en) | 2001-11-08 |
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