Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which are derived by a person skilled in the art based on the embodiments of the invention, fall within the scope of protection of the invention.
It will be appreciated by those skilled in the art that in the present disclosure, the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc. refer to an orientation or positional relationship based on that shown in the drawings, which is merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore the above terms should not be construed as limiting the present invention.
Example 1
The present solution provides a dual-band high-gain super-surface antenna for radar imaging, comprising:
The super surface layer 10, the first dielectric layer 20, the microstrip patch layer 30, the second dielectric layer 40 and the ground layer 50 are sequentially arranged from top to bottom, wherein the super surface layer 10 is a patch group 111 formed by arranging a plurality of rectangular patches 111 into a diamond shape, gaps which are identical to the diagonal lines of the patch group 111 are etched on the rectangular patches 111 positioned on the diagonal lines of the patch group 111, the microstrip patch layer 30 comprises a SIW cavity 33, a feeder line 31 positioned at the bottom of the SIW cavity 33, a metal surface at the top of the SIW cavity 33 is a top microstrip patch 32 containing a T-shaped power divider, and a SIW array through hole 42 and a center short circuit through hole group 41 are arranged in the area, corresponding to the microstrip patch layer 30, on the second dielectric layer 40.
The dual-band high-gain super-surface antenna for radar imaging combines SIW and MTS technologies, can achieve a dual-band effect with wide bandwidth and high gain in two frequency bands of 7.4-9.4 GHz and 13.3-14.6 GHz, has in-band gains of 5.4-8.2 dBi and 5.6-8.2 dBi, has excellent performance, and is suitable for efficient communication and target detection in a radar imaging system.
Specifically, as shown in fig. 2, regarding the super surface layer 10 of the dual-band high-gain super surface antenna for radar imaging of the present embodiment:
The super surface layer 10 in this embodiment is located at the center of the first dielectric layer 20, and the super surface layer 10 is disposed in a direction staggered with the first dielectric layer 20. In other words, the first dielectric layer 20 is designed in a rectangular shape, and the diamond-shaped sides of the patch group 11 of the super-surface layer 10 are inclined at an angle to the rectangular sides of the first dielectric layer 20, and the center of the patch group 11 overlaps with the center of the first dielectric layer.
The adjacent rectangular patches 111 in the super surface layer 10 of the scheme are arranged at intervals, the distances between the rectangular patches 111 in the same row and the rectangular patches 111 in the adjacent row are the same, the distances between the rectangular patches 111 in the same column and the rectangular patches 111 in the same adjacent column are the same, and then vertical staggered transverse gaps and vertical gaps are formed on the patch group 11. Specifically, the transverse slits on the patch group 11 are parallel to the transverse edges of the patch group 11, and the vertical slits on the patch group 11 are parallel to the vertical edges of the patch group 11.
In some embodiments, the width of the transverse slit and the vertical slit are the same, both being 0.5mm.
Further, the rectangular patches 111 on the patch set 11 in this embodiment are axisymmetric with respect to the central position of the patch set 11, and specifically, the rectangular patches 111 on the patch set 11 are vertically symmetric and laterally symmetric with respect to the central position of the patch set 11.
It should be noted that, the rectangular patch 111 located on the diagonal of the patch set 11 is etched with a slot on the diagonal of the patch set 111, which has the advantage of reducing the interference of the magnetic current caused by the up-down symmetrical structure, which is helpful for adjusting the phase control and the beam forming characteristics of the antenna and enhancing the radiation performance of the antenna.
In some embodiments, the rectangular patch 111 located on the diagonal of the patch group 11 is located at the center of the excitation structure, and the thickness of the etched slot is 0.5mm, so as to cut off the magnetic current in order to reduce the interference caused by the up-down symmetrical structure, thereby helping to optimize the phase control and beam forming characteristics of the antenna, and further enhancing the radiation performance of the antenna.
In some embodiments, rectangular patch 111 is rectangular.
In a specific embodiment, the patch group 11 is composed of rectangular patches 111 arranged in 4*4 in a rhombus shape, and in this case, each row of the patch group 11 is composed of 4 rectangular patches 111, and each column of the patch group 11 is also composed of 4 rectangular patches 111.
To ensure that the super-surface layer 10 is capable of exciting the characteristic modes in both low and high frequency bands, the side length a and the spacing b of the rectangular patch 111 of the present embodiment need to satisfy the following formula 3×a+2×b=1.5λ, where λ is the wavelength corresponding to the operating frequency.
In addition, the rectangular patches of the patch group 11 of the present embodiment include a first rectangular patch, a second rectangular patch, and a third rectangular patch of unequal sizes, wherein the first rectangular patch P 1, the second rectangular patch P 2, and the third rectangular patch P 3 are different in size.
In a specific embodiment of the present solution, the first rectangular patch P 1 and the third rectangular patch P 3 are square, and the second rectangular patch P 2 is rectangular with a length side equal to a side length of the first rectangular patch P 1 and a width side equal to a side length of the third rectangular patch P 2.
In some embodiments, the side length of the first rectangular patch P 1 -8 mm is used for exciting the characteristic mode of the low frequency band, the side length of the third rectangular patch P 3 is 3-4 mm, the third rectangular patch P 3 and the cut first rectangular patch P 1 excite the characteristic mode of the high frequency band together, the second rectangular patch P 2 can excite stronger surface current in the low frequency band or the high frequency band, and the second rectangular patch P 2 plays a role in balancing the low frequency band and the high frequency band in the frequency band transition.
Preferably, the side length of the first rectangular patch P 1 is 6mm, and the side length of the third rectangular patch P 3 is 4mm.
In some embodiments, the plurality of third rectangular patches is arranged at the center of the patch group 11 to form a small square, four first rectangular patches are arranged at four corner positions of the patch group 11, and the plurality of second rectangular patches are arranged between the third rectangular patches and the first rectangular patches. In the structure shown in fig. 2, four third rectangular patches are arranged at the center of the patch group 11 to form a small square, four first rectangular patches are arranged at four corner positions of the patch group 11, and eight second rectangular patches are arranged between the third rectangular patches and the first rectangular patches.
In some embodiments, the super surface layer 10 is metallic copper.
The placement angle of the metal patch 111 of the super surface layer 10 and the design structure thereof are adjusted, so that the energy loss is effectively reduced, and the design and the realization of the antenna are simplified. In addition, the rotational placement and slotted design of the supersurface layer 10 enables efficient adjustment of electric and magnetic field distribution, thereby achieving more uniform radiation performance and lower reflection losses.
Regarding the first dielectric layer 20 of the present embodiment:
the first dielectric layer 20 of the present embodiment is used for physically supporting the super-surface layer 10, and in some embodiments, the first dielectric layer 20 is a dielectric substrate with Rogers RT3003 having low loss characteristics in high frequency transmission, and has a thickness of 2.28 mm a, so as to support the structure of the super-surface layer and ensure stability and efficient transmission of the antenna.
The microstrip patch layer 30, the second dielectric layer 40 and the ground layer 50 in this embodiment form a SIW structure, and the SIW structure is used for coupling and exciting the characteristic mode of the super surface layer 10 to form an antenna working band. The SIW structure is a structure combining the conventional metal waveguide technology and the integrated circuit technology, and can effectively transmit electromagnetic waves, and meanwhile has the characteristics of smaller size and low loss, and the electric field resonance Mode of the SIW is designed to excite a specific characteristic Mode (Resonant Mode) on the super surface so as to control and modulate the electromagnetic waves.
With respect to the microstrip patch layer 30 of the present embodiment:
As shown in fig. 4 and fig. 6, the top microstrip patch 32 is placed at the center of the patch set 11 in this embodiment, so that the top microstrip patch 32 is effectively coupled to excite the characteristic mode of the patch set 11, and the coupling efficiency and radiation performance of the antenna are improved. Specifically, the top microstrip patch 32 is disposed corresponding to a slot located on a diagonal of the patch group 11, and a symmetry center of the top microstrip patch 32 is disposed corresponding to a symmetry center of the patch group 11.
As shown in fig. 3, the microstrip patch layer 30 of the present embodiment has a bottom loading feed line 31 to be able to efficiently transmit signals to the SIW structure. In some embodiments, the resistance of the feeder 31 is 50Ω.
One end of the feeder line 31 is connected to the SIW cavity 33, and the other end is connected to the side of the second dielectric layer 40, so as to be used for feeding an electrical signal through an SMA port with external impedance matching. In some embodiments, the feed line 31 is located on the central axis of the second dielectric layer 40, and the microstrip patch layer 10 is of an axisymmetric design compared to the feed line 31.
The top of the SIW cavity 33 is provided with a top microstrip patch 32 containing a T-shaped power divider to achieve a more accurate effect of exciting the energy efficient coupling to the super surface layer 10, where the top microstrip patch 32 containing a T-shaped power divider can be used to excite the characteristic mode of the super surface layer 10.
In some embodiments, the SIW cavity 33 is a "concave" with a concave bottom, the top microstrip patch 32 is of T-shaped design, and a T-shaped power divider is provided within the top microstrip patch 32.
More specifically, the top microstrip patch 32 is designed in a shape of a "T" set by a bar patch and a vertical bar patch, wherein the bar patch is designed in a dumbbell shape with a large width at both ends and a small width in the middle, and both ends of the bar patch are transited with the middle through a chamfer so that the top microstrip patch 32 has a good matching effect. In some embodiments, the top microstrip patch 32 has a bar patch length of 28mm, a width of 5mm at both ends, and a width of 1.5mm in the middle.
Regarding the second dielectric layer 40 of the present embodiment:
The second dielectric layer 40 is a dielectric substrate of Rogers RT3003 with a thickness of 1.52 mm, the second dielectric layer 30 is inserted with a metal through hole 42 and a central short-circuit through hole group 41 which are arranged in array order, the metal through hole 42 and the central short-circuit through hole group 41 are connected with the grounding layer 50 and the microstrip patch layer 30, the through holes are helpful for optimizing the transmission path of electromagnetic waves, and the resonance characteristic of the antenna is controlled through electromagnetic coupling, so that the bandwidth performance of the antenna is further improved.
As shown in fig. 3 and 5, the second dielectric layer 40 of the present embodiment is provided with a SIW array via 42 and a central short-circuit via group 41 corresponding to the region of the microstrip patch layer 30, where the SIW array via 42 is disposed corresponding to the side of the SIW cavity 33, and the central short-circuit via group 41 is disposed corresponding to the central axis of the SIW cavity 33 and is located in the middle region of the SIW cavity 33.
In some embodiments, the center shorting via group 41 includes two spaced apart vias. In a specific embodiment, the radius of the two through holes of the center short-circuit through hole group 41 is 0.5mm, and the pitch between the through holes is 1.5mm.
With respect to the ground layer 50 of the present embodiment:
The grounding layer 50 of the present embodiment is a layer of grounded planar metallic copper, so as to ensure good electromagnetic shielding effect and reduce reflection and radiation loss. As shown in fig. 4, the ground layer 50 and the second dielectric layer 40 have the same size, and the first dielectric layer 20 has a smaller size than the second dielectric layer 40.
In some embodiments, the overall size of the dual band high gain super surface antenna for radar imaging is 42.8 mm*33.7 mm*3.83 mm, corresponding to the size of the ground layer 50 and the second dielectric layer 40. Experiments prove that the dual-band high-gain super-surface antenna for radar imaging provided by the scheme realizes a dual-band effect with wide bandwidth and high gain in two frequency bands of 7.4-9.4 GHz and 13.3-14.6 GHz, has excellent performance and is suitable for high-efficiency communication and target detection in a radar imaging system, and the in-band gain is 5.4-8.2 dBi and 5.6-8.2 dBi.
Embodiment two Performance test of Dual-band high-gain ultra-surface antenna for radar imaging
According to the first embodiment, the dual-band high-gain super-surface antenna for radar imaging is obtained, and the structure is as follows:
The surface of the super-surface layer is composed of a patch group formed by rectangular patches which are arranged in a diamond shape by 4 multiplied by 4, wherein the rectangular patches in the patch group are numbered as P 1、P2、P3 according to the size, wherein P 1 and P 3 are square patches with the side length of 6mm and 4mm respectively, the interval of P 1、P2、P3 is 0.5mm, and four rectangular patches positioned in the center of the patch group are positioned in the center of excitation and are etched with a gap with the width of 0.5 mm;
A first dielectric layer, which is a dielectric substrate with Rogers RT3003 having low loss characteristics in high frequency transmission, and has a thickness of 2.28 mm;
The microstrip patch layer is provided with 50 omega feeder lines at the bottom, the length of the microstrip patch at the top is 28mm, the widths of the two ends are 5mm, the middle width is 1.5mm, and the widths of the two ends and the middle width with unequal widths are transited through chamfer angles.
The second dielectric layer is a dielectric substrate of Rogers RT3003 with the thickness of 1.52 mm, SIW array through holes and a central short-circuit through hole group are arranged in the area corresponding to the microstrip patch layer, the central short-circuit through hole group is arranged in the middle, the radius of two through holes of the central short-circuit through hole group is 0.5mm, and the distance between the through holes is 1.5mm.
And the grounding layer is made of copper metal.
The MS graph of the mode significance of the characteristic mode of the dual-band high-gain super-surface antenna for radar imaging, which is placed at a low frequency or a high frequency, is shown in fig. 7, and in fig. 7, (a) is the mode significance of the low frequency, and (b) is the mode significance of the high frequency, so that the dual-band high-gain super-surface antenna for radar imaging can excite four characteristic modes and has higher mode significance in two frequency bands, and therefore, the super-surface layer of the diamond-shaped patch group is proved to enable the dual-band high-gain super-surface antenna for radar imaging to excite the characteristic modes with high-efficiency coupling and radiation in different frequency bands, and therefore, the good performance of the dual-band high-gain super-surface antenna for radar imaging in the whole working frequency band is ensured.
Further testing the surface current profiles of the eight characteristic modes of the dual band high gain super surface antenna for radar imaging as shown in fig. 8, currents J 1,J2,J3 and J 4 correspond to the surface currents of the four characteristic modes of mode 1, mode 2, mode 3 and mode 4 at 8.4GHz, and currents J 5,J6,J7 and J 8 correspond to the surface currents of the four characteristic modes of mode 5, mode 6, mode 7 and mode 8 at 14.0GHz, respectively. Specifically, the surface current distribution of modes 1 to 4 in the low frequency band shows a more uniform radiation mode, and modes 5 to 8 form a more concentrated current distribution in the high frequency band, which indicates that the dual-band high-gain super-surface antenna for radar imaging can effectively regulate and control the propagation characteristics of electromagnetic waves in different frequency bands, the surface current distribution of the low frequency band is more extensive, the radiation characteristics of the dual-band high-gain super-surface antenna for radar imaging in a larger scale are reflected, and in the high frequency band, the current distribution becomes more concentrated due to shorter wavelength, and the radiation characteristics of the super-surface layer can be controlled more accurately in the high frequency condition. Through the optimization design, the dual-band high-gain super-surface antenna for radar imaging can realize excellent gain and beam forming capability in high frequency and low frequency bands, and meets the requirements of a radar imaging system on wide frequency bands, high gain and low side lobes.
In order to verify the advantages of the structural design of the microstrip patch layer of the dual-band high-gain super-surface antenna for radar imaging, a SIW without a microstrip antenna is designed, wherein the microstrip patch layer of the SIW without the microstrip antenna is not provided with a microstrip patch, the SIW with the microstrip antenna is provided with the microstrip patch, the dual-band high-gain super-surface antenna for radar imaging is defined as a final antenna for setting the first dielectric layer and the super-surface layer, the input impedance of the SIW without the microstrip antenna, the SIW with the microstrip antenna and the final antenna are obtained as shown in fig. 9, the electric field distribution diagram of the SIW without the microstrip patch in the cavity in four electric field resonance modes is shown in fig. 11, and the electric field distribution diagram of the SIW with the microstrip patch in the cavity in six electric field resonance modes is shown in fig. 10. It can be seen that SIW without microstrip patch excites four electric field resonance modes of TE120, mixed mode, half TE310 and TE320 at 8.6, 12.0, 13.2 and 14.9GHz, wherein TE120 is introduced by cavity insertion into the central short-circuit via group, and mixed mode is introduced by synthesis of two electric field resonance modes of TE120 and half TE 310. While SIW with microstrip patch excites new electric field mode at 9.4GHz and 14.2GHz, which is introduced by full wavelength mode and 1.5 times wavelength mode of microstrip patch, TE120, mixed mode, half TE310 and TE320 excited by SIW cavity all cause full wavelength or 1.5 times wavelength electric field mode of top microstrip patch.
The SIW structure is used to excite the characteristic mode of the super-surface layer to form the antenna operating band, in particular, the microstrip patch with the electric field mode is used as a radiating element to excite the characteristic mode of the super-surface structure, so that the potential operating band of the antenna exists between the 7.9GHz TE120 and 9.4GHz full-wavelength modes and between the 12.4GHz half TEs 310 and 320. As shown in fig. 9, the complete antenna after loading the subsurface excites two resonant modes Z1 and Z2 at 8.2GHz and 13.6GHz, which are introduced by the eigenmodes excited by the subsurface.
Fig. 12 is the surface currents on the super-surfaces of the resonance modes Z 1 and Z 2, and it is known from the observation of the surface currents that Z1 is the superposition of mode 3 and mode 4 in the characteristic mode, and Z2 is the superposition of mode 6 and mode 7, because the super-surface layer is located at the center of the microstrip patch, but the lower end is affected by the SIW fringe electric field to some extent, resulting in a stronger current intensity in the lower portion of the super-surface layer.
Fig. 13 is a graph of return loss S 11 and gain for a dual-band high-gain subsurface antenna for radar imaging, which can be seen to have operating bandwidths of 7.4-9.4 GHZ and 13.3-14.6 GHz, in-band gains of 5.4-8.2 dBi and 5.6-8.2 dBi, with wide bandwidth, high gain, low loss and low profile characteristics.
Fig. 14 is a main polarization and cross polarization pattern of a dual-band high-gain subsurface antenna for radar imaging at 8.4GHz and 14.0GHz, showing the radiation performance of the dual-band high-gain subsurface antenna for radar imaging at these two frequency points. At 8.4GHz, the main polarization pattern presents obvious directivity, has higher gain and smaller side lobes, and the cross polarization pattern shows that the antenna has good polarization performance under the frequency and obvious cross polarization inhibition effect. At 14.0GHz, the main polarization pattern maintains a relatively uniform radiation pattern with stable gain performance, and the cross polarization pattern further verifies that the antenna has a low cross polarization level.
In a combined view, the dual-band high-gain super-surface antenna for radar imaging has good directivity, polarization performance and low cross polarization characteristics in the frequency band, and is suitable for an efficient wireless communication system.
It should be understood by those skilled in the art that the technical features of the above embodiments may be combined in any manner, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, they should be considered as being within the scope of the description provided herein, as long as there is no contradiction between the combinations of the technical features.
The foregoing examples illustrate only a few embodiments of the application, which are described in greater detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.