CN119706735B - Micromachine switch manufacturing method and micromachine switch - Google Patents
Micromachine switch manufacturing method and micromachine switchInfo
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- CN119706735B CN119706735B CN202411754104.1A CN202411754104A CN119706735B CN 119706735 B CN119706735 B CN 119706735B CN 202411754104 A CN202411754104 A CN 202411754104A CN 119706735 B CN119706735 B CN 119706735B
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Abstract
本申请提供了一种微机械开关的制备方法和微机械开关，微机械开关的制备方法包括提供第一衬底，在第一衬底的一侧制备第一电极层。提供第二衬底，在第二衬底的一侧制备第一子保护层，在第一子保护层远离第二衬底的一侧制备单晶硅层。在单晶硅层远离衬底一侧制备第二子保护层。在第二子保护层远离第二衬底的一侧制备第二电极层。对第一子保护层、第二子保护层及第二衬底进行刻蚀形成开关结构。第二驱动电极及第二极在第二衬底上的正投影位于开关结构层在第二衬底上的正投影内，开关结构远离第二极的一端与第二衬底连接，另一端悬空。将第二衬底设有所述第二电极层的一侧与所述第一衬底设有所述第一电极层的一侧键合。
The present application provides a method for preparing a micromechanical switch and a micromechanical switch. The method for preparing the micromechanical switch includes providing a first substrate, and preparing a first electrode layer on one side of the first substrate. Providing a second substrate, preparing a first sub-protective layer on one side of the second substrate, and preparing a single crystal silicon layer on a side of the first sub-protective layer away from the second substrate. Preparing a second sub-protective layer on a side of the single crystal silicon layer away from the substrate. Preparing a second electrode layer on a side of the second sub-protective layer away from the second substrate. Etching the first sub-protective layer, the second sub-protective layer, and the second substrate to form a switch structure. The orthographic projections of the second drive electrode and the second pole on the second substrate are located within the orthographic projection of the switch structure layer on the second substrate. One end of the switch structure away from the second pole is connected to the second substrate, and the other end is left floating. The side of the second substrate provided with the second electrode layer is bonded to the side of the first substrate provided with the first electrode layer.
Description
Technical Field
The application relates to the technical field of micro-electromechanical devices, in particular to a preparation method of a micro-mechanical switch and the micro-mechanical switch.
Background
Micromechanical switches are mechanical structure switches with dimensions on the order of micrometers to millimeters, implemented using micro-nano fabrication techniques. The micro-mechanical switch has the advantages of small volume, low power consumption, high response speed, high reliability, easy integration with the existing integrated circuit and the like, and is widely applied to a plurality of fields such as radio frequency communication, optical communication, aerospace and the like.
The switch structure obtained by the existing preparation method of the micromechanical switch has low service life and the preparation method is complex.
Disclosure of Invention
The application provides a preparation method of a micromechanical switch and the micromechanical switch.
A first aspect of the present application provides a method of manufacturing a micromechanical switch, the method comprising:
providing a first substrate;
preparing a first electrode layer on one side of the first substrate, and stripping the first electrode layer to form a first driving electrode and a first electrode which is arranged at intervals with the first driving electrode;
Providing a second substrate;
preparing a first sub-protection layer on one side of the second substrate, preparing a monocrystalline silicon layer on one side of the first sub-protection layer far away from the second substrate, etching the monocrystalline silicon layer to form a monocrystalline silicon beam, preparing a second sub-protection layer on one side of the monocrystalline silicon layer far away from the second substrate, and covering the orthographic projection of the monocrystalline silicon beam on the second substrate by the orthographic projection of the second sub-protection layer on the second substrate;
Peeling the second electrode layer to form a second driving electrode and a second electrode which is arranged at intervals with the second driving electrode;
Etching the first sub-protection layer, the second sub-protection layer and the second substrate to form a switch structure, wherein the switch structure comprises a monocrystalline silicon beam and a protection layer formed by the first sub-protection layer and the second sub-protection layer which cover the monocrystalline silicon beam, the orthographic projection of the second driving electrode and the second electrode on the second substrate is positioned in the orthographic projection of the switch structure on the second substrate, and one end of the switch structure, which is far away from the second electrode, is connected with the second substrate, and the other end of the switch structure is suspended;
bonding a side of the second substrate provided with the second electrode layer with a side of the first substrate provided with the first electrode layer, overlapping the orthographic projection of the first driving electrode on the first substrate with the orthographic projection of the second driving electrode on the first substrate, and overlapping the orthographic projection of the first electrode on the first substrate with the orthographic projection of the second electrode on the first substrate.
In one embodiment, after preparing the second electrode layer on the side of the second sub-protection layer away from the second substrate, before etching to form the switch structure, the preparation method further includes:
and preparing a support column on one side of the second driving electrode far away from the second substrate, wherein the support column is positioned at one end of the second driving electrode far away from the second electrode.
In one embodiment, before preparing the first electrode layer on one side of the first substrate, the preparation method further includes:
Etching the first substrate to form a first through hole and a second through hole, wherein the first through hole and the second through hole are communicated with the surface of the first substrate, on which the first electrode layer is required to be arranged, and the other surface opposite to the surface;
And filling metal into the first through hole and the second through hole respectively to form a first metal interconnection and a second metal interconnection, wherein the first metal interconnection is used for being electrically connected with the second driving electrode through the support column, and the second metal interconnection is used for being electrically connected with the first electrode.
In one embodiment, before filling metal into the first via hole and the second via hole to form a first metal interconnection and a second metal interconnection, the preparation method further comprises:
And preparing a first insulating layer and a second insulating layer on the inner wall of the first through hole and the inner wall of the second through hole respectively.
In one embodiment, after preparing the second electrode layer on the side of the second sub-protection layer away from the second substrate, before etching to form the switch structure, the preparation method further includes:
And preparing a sealing metal bonding layer on one side of the second driving electrode far away from the second substrate, wherein the orthographic projection of the sealing metal bonding layer on the second substrate is positioned outside the orthographic projection of the monocrystalline silicon beam on the second substrate.
A second aspect of the present application provides a micromechanical switch, prepared by the preparation method described above, comprising:
A first substrate;
the first electrode layer comprises a first driving electrode and a first electrode which is arranged at intervals with the first driving electrode;
The switch structure is positioned on one side of the first electrode layer away from the first substrate and is arranged at intervals with the first electrode layer, and comprises a monocrystalline silicon beam and a protective layer for coating the monocrystalline silicon beam;
The second electrode layer is positioned on one side of the protective layer facing the first electrode layer, and comprises a second driving electrode and a second electrode which is arranged at intervals with the second driving electrode;
the first driving electrode can drive the second driving electrode to drive the monocrystalline silicon beam to deflect towards the direction close to the first substrate, so that the first pole is contacted with the second pole.
In one embodiment, the micromechanical switch further comprises a second substrate located on one side of the switch structure away from the first substrate, an accommodating space for accommodating the monocrystalline silicon beam is arranged between the second substrate and the first substrate, the second substrate is connected with the first substrate through a sealing metal bonding layer, and the sealing metal bonding layer is used for sealing the accommodating space.
In one embodiment, the first substrate is provided with a first through hole and a second through hole, the first through hole and the second through hole are communicated with the surface of the first substrate facing the switch structure and the surface far away from the switch structure, a first metal interconnection is arranged in the first through hole, a second metal interconnection is arranged in the second through hole, the first metal interconnection is electrically connected with the second driving electrode, and the second metal interconnection is electrically connected with the first electrode.
In one embodiment, a first insulating layer is arranged between the inner wall of the first through hole and the first metal interconnection, and a second insulating layer is arranged between the inner wall of the second through hole and the second metal interconnection.
In one embodiment, the material of the second pole is ruthenium, nickel or cobalt.
According to the preparation method of the micromechanical switch, the monocrystalline silicon layer is used for preparing the monocrystalline silicon beam, the monocrystalline silicon beam has extremely high fatigue life, so that the micromechanical switch can be repeatedly opened and closed for a long time without obvious performance degradation or failure, and the elastic modulus of the monocrystalline silicon beam is smaller, so that the driving force required by the micromechanical switch is smaller, the driving voltage can be reduced, and the power consumption is reduced. Moreover, the preparation method of the micromechanical switch can directly obtain a switch structure by etching the second substrate, so that the process flow of the micromechanical switch can be simplified, the production efficiency is improved, the protective layer can effectively protect the monocrystalline silicon beam, and the monocrystalline silicon beam is prevented from being damaged in etching or other process flows, thereby being beneficial to improving the yield and reliability of the micromechanical switch.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
Fig. 1 to 11 are process flow diagrams of a method for manufacturing a micromechanical switch according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments (or "implementations") of the present application will be clearly and completely described herein with reference to the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated.
If there are terms (e.g., upper, lower, left, right, front, rear, inner, outer, top, bottom, center, vertical, horizontal, longitudinal, lateral, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.) related to directional indications or positional relationships in embodiments of the present application, such terms are used merely to explain the relative positional relationships, movement, etc. between the components at a particular pose (as shown in the drawings), and if the particular pose is changed, the directional indications or positional relationships are correspondingly changed. In addition, the terms "first", "second", etc. in the embodiments of the present application are used for descriptive convenience only and are not to be construed as indicating or implying relative importance.
The method for manufacturing the micromechanical switch and the micromechanical switch according to the embodiments of the present application are described in detail below with reference to the accompanying drawings. The features of the examples and embodiments described below may be supplemented or combined with one another without conflict.
The embodiment of the application provides a preparation method of a micromechanical switch, as shown in fig. 1 to 11, comprising the following steps:
step S100 provides the first substrate 10.
Step S110, preparing a first electrode layer 20 on one side of the first substrate 10, and peeling the first electrode layer 20 to form a first driving electrode 21 and a first electrode 22 spaced apart from the first driving electrode 21.
Step S120 provides a second substrate 30.
Step S130, preparing a first sub-protective layer 31 on one side of the second substrate 30, and preparing a monocrystalline silicon layer 32 on the side of the first sub-protective layer 31 away from the second substrate 30. And etching the monocrystalline silicon layer 32 to form monocrystalline silicon beams 321. A second sub-protective layer 33 is prepared on the side of the monocrystalline silicon layer 32 remote from the second substrate 30, the orthographic projection of the second sub-protective layer 33 on the second substrate 30 covering the orthographic projection of the monocrystalline silicon beam 321 on the second substrate 30.
In step S140, a second electrode layer 40 is prepared on a side of the second sub-protective layer 33 remote from the second substrate 30. The second electrode layer 40 is peeled off to form a second driving electrode 41 and a second electrode 42 spaced apart from the second driving electrode 41.
Step S150, etching the first sub-protection layer 31, the second sub-protection layer 33 and the second substrate 30 to form the switch structure 50. The switching structure 50 includes a single crystal silicon beam 321 and a protective layer 51 composed of a first sub-protective layer 31 and a second sub-protective layer 33 covering the single crystal silicon beam 321. The orthographic projections of the second driving electrode 41 and the second pole 42 on the second substrate 30 are located in the orthographic projection of the switch structure 50 on the second substrate 30, and one end of the switch structure 50 away from the second pole 42 is connected with the second substrate 30, and the other end is suspended.
Step S160 of bonding the side of the second substrate 30 provided with the second electrode layer 40 with the side of the first substrate 10 provided with the first electrode layer 20 such that the front projection of the first driving electrode 21 on the first substrate 10 overlaps with the front projection of the second driving electrode 41 on the first substrate 10, and such that the front projection of the first electrode 22 on the first substrate 10 overlaps with the front projection of the second electrode 42 on the first substrate 10.
Existing switching structures for micromechanical switches typically employ metal beams or silicon nitride beams. When the micro-mechanical switch adopts the metal beam, the metal beam is bent and deformed by the larger elastic modulus of the metal, so that the driving voltage required by the micro-mechanical switch is larger, the energy consumption of the micro-mechanical switch can be increased, and the micro-mechanical switch can be limited to be used in an application scene with lower power consumption. When the micromechanical switch adopts the silicon nitride beam, residual stress is easy to generate in the preparation process of the silicon nitride Liang Zaizhi, so that the beam body of the silicon nitride beam is bent, the reliability and the service life of the micromechanical switch are affected, the elastic modulus of the silicon nitride is also larger, and the driving voltage required by the micromechanical switch is also larger.
According to the preparation method of the micromechanical switch, the monocrystalline silicon layer 32 is utilized to prepare the monocrystalline silicon beam 321, the monocrystalline silicon beam 321 has extremely high fatigue life, so that the micromechanical switch can be repeatedly opened and closed for a long time without obvious performance degradation or failure, and the elastic modulus of the monocrystalline silicon beam 321 is smaller, so that the driving force required by the micromechanical switch is smaller, thereby reducing the driving voltage and the power consumption. Furthermore, the preparation method of the micromechanical switch can directly etch the second substrate 30 to obtain the switch structure 50, so that the process flow of the micromechanical switch can be simplified, the production efficiency is improved, the protective layer 51 can effectively protect the monocrystalline silicon beam 321, and the monocrystalline silicon beam 321 is prevented from being damaged in etching or other process flows, so that the yield and the reliability of the micromechanical switch are improved. In one embodiment, as shown in fig. 1, the first substrate 10 in step S100 is a monocrystalline silicon substrate, and step S100 further includes preparing an insulating dielectric layer 11 above the first substrate 10 by chemical vapor deposition.
In one embodiment, as shown in fig. 1 and 2, before step S110, the preparation method further includes:
Dry etching is carried out on the insulating dielectric layer 11 by using the photoresist as a mask plate, so that a partial area of the first substrate 10 is exposed;
etching the first substrate 10 by using a silicon deep etching method to form a first through hole 101 and a second through hole 102, wherein the first through hole 101 and the second through hole 102 are communicated with the surface of the first substrate 10, on which the first electrode layer is required to be arranged, and the other surface opposite to the surface;
the first metal interconnection 103 and the second metal interconnection 104 are formed by filling conductive metal in the first via hole 101 and the second via hole 102 by sputtering and electroplating, respectively.
By manufacturing the first metal interconnect 103 and the second metal interconnect 104 in the first substrate 10, the distance of signal transmission can be reduced, thereby reducing signal loss and delay, reducing the requirement of wire bonding, saving the chip area, and improving the integration level. In addition, the first metal interconnection 103 and the second metal interconnection 104 can be directly connected with other components (such as a printed circuit board) through metal bumps, and the connection mode is simple and reliable.
Further, the first through hole 101 and the second through hole 102 are disposed perpendicular to the bottom surface of the first substrate 10.
Further, after the first metal interconnection 103 and the second metal interconnection 104 are formed, another surface of the first substrate opposite to the surface where the first electrode layer is to be disposed may be planarized by using a chemical mechanical polishing method, so as to remove the excess conductive metal material generated by electroplating.
Further, as shown in fig. 2, before the first via hole 101 and the second via hole 102 are filled with metal to form the first metal interconnection 103 and the second metal interconnection 104, the preparation method further includes preparing a first insulating layer 105 and a second insulating layer 106 on the inner wall of the first via hole 101 and the inner wall of the second via hole 102, respectively, where the material of the first insulating layer 105 and the second insulating layer 106 may be an insulating material such as silicon dioxide. The first insulating layer 105 and the second insulating layer 106 may form an insulating layer on the inner wall of the via hole, preventing a short circuit from occurring between the first metal interconnection 103 or the second metal interconnection 104 and the first substrate 10, thereby ensuring stable electrical performance of the metal interconnection.
In one embodiment, as shown in fig. 3, in step S110, the first electrode layer 20 is prepared on a side of the insulating dielectric layer 11 away from the first substrate 10.
Further, as shown in fig. 3, step S110 further includes peeling the first electrode layer 20 to form a third electrode 23 and a first sealing metal layer 24. The third electrode 23 is located at a side of the first driving electrode 21 away from the first electrode 22, and is spaced apart from the first driving electrode 21. The first sealing metal layer 24 is ring-shaped, and the orthographic projection of the first sealing metal layer 24 on the first substrate 10 encloses the orthographic projection of the first driving electrode 21, the first electrode 22, and the third electrode 23 on the first substrate 10.
In some embodiments, the first pole 22 is electrically connected to the second metal interconnect 104 and the third pole 23 is electrically connected to the first metal interconnect 103.
In one embodiment, as shown in fig. 4, the second substrate 30 provided in step S120 may be a single crystal silicon substrate, and the first sub-protective layer 31 in step S130 may be a silicon dioxide protective layer. In step S130, the thickness of the first sub-protective layer 31 ranges from 500nm to 1000nm, and the thickness of the first sub-protective layer 31 may be 500nm, 750nm, 1000nm, or the like. The thickness of the single crystal silicon layer 32 is in the range of 2 μm to 5 μm, and the thickness of the single crystal silicon layer 32 may be, for example, 2 μm, 3 μm, 5 μm, or the like.
In one embodiment, as shown in fig. 5, in step S130, monocrystalline silicon layer 32 may be etched using a dry etch to form monocrystalline silicon beams 321 and monocrystalline silicon device layer 322. The monocrystalline silicon beam 321 is spaced apart from the monocrystalline silicon device layer 322, the monocrystalline silicon device layer 322 is annular, and the orthographic projection on the second substrate 30 surrounds the orthographic projection of the monocrystalline silicon beam 321 on the second substrate 30.
In one embodiment, as shown in fig. 6, in step S130, a second sub-protection layer 33 is deposited over the monocrystalline silicon layer 32 using a chemical vapor deposition method, and the second sub-protection layer 33 may be a silicon dioxide protection layer. The second sub-protection layer 33 may cover the monocrystalline silicon beam 321 and the monocrystalline silicon device layer 322. In some embodiments, the thickness of the second sub-protection layer 33 is 20% -30% of the thickness of the single crystal silicon beam 321.
In one embodiment, as shown in fig. 7, in step S140, the second driving electrode 41, the second electrode 42, and the second sealing metal layer 43 are formed by processing the second electrode layer 40 using a metal peeling method. The second sealing metal layer 43 is annular and is arranged at intervals from the second driving electrode 41 and the second pole 42, and the orthographic projection of the second sealing metal layer 43 on the second substrate 30 surrounds the orthographic projection of the second driving electrode 41 and the second pole 42 on the second substrate 30.
In one embodiment, the material of the second pole 42 is ruthenium, nickel, or cobalt.
In one embodiment, as shown in FIG. 8, after step S140 and before step S150, the fabrication method further comprises fabricating a support post 61 on a side of the second electrode layer 40 away from the second substrate 30 and an end of the support post 61 where the second driving electrode 41 is away from the second electrode 42 using an electroplating method.
Further, as shown in fig. 8, the manufacturing method further includes manufacturing a sealing metal bonding layer 62 on a side of the second electrode layer 40 remote from the second substrate 30 using an electroplating method. The sealing metal bonding layer 62 is annular in shape, and there is overlap between the orthographic projection of the sealing metal bonding layer 62 on the second substrate 30 and part or all of the orthographic projection of the second sealing metal layer 43 on the second substrate 30.
In some embodiments, the thickness of the support post 61 and the sealing metal bonding layer 62 are the same, the thickness ranges from 3 μm to 6 μm, and the thickness may be, for example, 3 μm, 4 μm, 6 μm, etc.
In one embodiment, as shown in fig. 9 and 10, etching the first sub-protection layer 31, the second sub-protection layer 33, and the second substrate 30 in step S150 to form the switch structure 50 specifically includes:
Etching to remove part of the materials of the first sub-protection layer 31 and the second sub-protection layer 33 between the monocrystalline silicon device layer 322 and the monocrystalline silicon beam 321 by using a dry etching method, and exposing part of the area of the second substrate 30;
The exposed partial area of the second substrate 30 is used as an etching window, the second substrate 30 is etched by using an isotropic dry etching process to form a first cavity 71, and the isotropic etching process can generate etching in a direction parallel to the upper surface of the second substrate 30 while forming the depth of the first cavity 71, so that the second substrate 30 below the monocrystalline silicon beam 321 is removed. By reducing the etch window on the side of the second drive electrode 41 remote from the second pole 42, the etch rate of the portion of the second substrate 30 covered by the orthographic projection of the support post 61 can be reduced, thereby forming the support structure 34 within the cavity 70 of the second substrate 30. In this process, a switch structure 50 with one end suspended is formed, and the end of the switch structure 50 away from the second pole 42 is connected to the second substrate 30 through the support structure 34 that is not etched.
By etching the second substrate 30 to obtain the switch structure 50, the first cavity 71 between the second substrate 30 and the switch structure 50 can increase the distance between the second substrate 30 and the first substrate 10, which is beneficial to avoiding interference of the second substrate 30 on the electromagnetic field of the first electrode 22 and the second metal interconnection 104.
The first sub-protective layer 31 and the second sub-protective layer 33 form a protective layer 51 surrounding the single crystal silicon beam 321 during etching, thereby avoiding damage to the single crystal silicon beam 321 during etching of the second substrate 30.
In some embodiments, the isotropic etching process is a xenon fluoride etching process.
In one implementation, as shown in fig. 11, in step S160, the process of bonding the side of the second substrate 30 provided with the second electrode layer 40 and the side of the first substrate 10 provided with the first electrode layer 20 specifically includes aligning the sealing metal bonding layer 62 with the first sealing metal layer 24, aligning the support column 61 with the third electrode 23, and then applying a certain temperature and pressure to the first substrate 10 and the second substrate 30 for metal bonding. After bonding, a second cavity 72 is formed between the side of the switch structure 50 provided with the second driving electrode 41 and the first substrate 10, and the second cavity 72 is communicated with the first cavity 71 and forms a vacuum cavity, so that dust and moisture can be prevented from entering and adversely affecting the micro-mechanical switch.
A driving voltage is applied to the first metal interconnection 103, and the driving voltage is applied to the second driving electrode 41 through the third pole 23 and the support column 61, at this time, the first driving electrode 21 and the second driving electrode 41 generate electrostatic attraction, so as to drive the switch structure 50 to bend towards the first substrate 10, so that the first pole 22 contacts with the second pole 42, and finally, the second metal interconnection 104 is turned on. After the drive voltage is removed, the electrostatic force is removed and the switching structure 50 springs back, breaking contact between the first pole 22 and the second pole 42.
The second driving electrode 41 and the second electrode 42 are disposed on a side of the protection layer 51 facing the first substrate 10, and after the first electrode 22 contacts the second electrode 42 to turn on the second metal interconnection 104, the protection layer 51 can isolate the second driving electrode 41 from the second electrode 42, so as to avoid interference of the control signal of the driving voltage of the first metal interconnection 103 on the signal transmission of the second metal interconnection 104.
The embodiment of the application also provides a micro-mechanical switch, which is prepared by the preparation method, and as shown in fig. 11, the micro-mechanical switch comprises a first substrate 10, a first electrode layer 20, a second electrode layer 40 and a switch structure 50.
Wherein the first electrode layer 20 is located at one side of the first substrate 10, and the first electrode layer 20 includes a first driving electrode 21 and a first electrode 22 spaced apart from the first driving electrode 21.
The switch structure 50 is located on a side of the first electrode layer 20 away from the first substrate 10 and is spaced apart from the first electrode layer 20, and the switch structure 50 includes a monocrystalline silicon beam 321 and a protective layer 51 covering the monocrystalline silicon beam 321.
The second electrode layer 40 is located at a side of the protective layer 51 facing the first electrode layer 20, and the second electrode layer 40 includes a second driving electrode 41 and a second electrode 42 spaced apart from the second driving electrode 41.
The first driving electrode 21 may drive the second driving electrode 41 to deflect the monocrystalline silicon beam 321 toward the direction approaching the first substrate 10, so that the first electrode 22 contacts the second electrode 42.
In one embodiment, the micromechanical switch further comprises the second substrate 30 on a side of the switch structure 50 remote from the first substrate 10. An accommodating space for accommodating the monocrystalline silicon beam 321 is provided between the second substrate 30 and the first substrate 10. The second substrate 30 is connected to the first substrate 10 through a sealing metal bonding layer 62, and the sealing metal bonding layer 62 is used for sealing the accommodating space.
In one embodiment, the first substrate 10 is provided with a first through hole 101 and a second through hole 102, the first through hole 101 and the second through hole 102 are communicated with the surface of the first substrate 10 facing the switch structure 50 and the surface far away from the switch structure 50, a first metal interconnection 103 is provided in the first through hole 101, a second metal interconnection 104 is provided in the second through hole 102, the first metal interconnection 103 is electrically connected with the second driving electrode 41, and the second metal interconnection 104 is electrically connected with the first electrode 22.
In one embodiment, a first insulating layer 105 is disposed between the inner wall of the first via 101 and the first metal interconnect 103, and a second insulating layer 106 is disposed between the inner wall of the second via 102 and the second metal interconnect 104.
In one embodiment, the material of the second pole 42 is ruthenium, nickel or cobalt.
It should be noted that the technical solutions or technical features described in the above embodiments may be combined or supplemented with each other without generating a conflict. The scope of the present application is not limited to the exact construction described in the above embodiments and illustrated in the accompanying drawings, but modifications, equivalents, improvements, etc. that fall within the spirit and principle of the present application are intended to be included in the scope of the present application.
Claims (10)
1.A method of manufacturing a micromechanical switch, the method comprising:
providing a first substrate;
preparing a first electrode layer on one side of the first substrate, and stripping the first electrode layer to form a first driving electrode and a first electrode which is arranged at intervals with the first driving electrode;
Providing a second substrate;
preparing a first sub-protection layer on one side of the second substrate, preparing a monocrystalline silicon layer on one side of the first sub-protection layer far away from the second substrate, etching the monocrystalline silicon layer to form a monocrystalline silicon beam, preparing a second sub-protection layer on one side of the monocrystalline silicon layer far away from the second substrate, and covering the orthographic projection of the monocrystalline silicon beam on the second substrate by the orthographic projection of the second sub-protection layer on the second substrate;
Peeling the second electrode layer to form a second driving electrode and a second electrode which is arranged at intervals with the second driving electrode;
Etching the first sub-protection layer, the second sub-protection layer and the second substrate to form a switch structure, wherein the switch structure comprises a monocrystalline silicon beam and a protection layer formed by the first sub-protection layer and the second sub-protection layer which cover the monocrystalline silicon beam, the orthographic projection of the second driving electrode and the second electrode on the second substrate is positioned in the orthographic projection of the switch structure on the second substrate, and one end of the switch structure, which is far away from the second electrode, is connected with the second substrate, and the other end of the switch structure is suspended;
bonding a side of the second substrate provided with the second electrode layer with a side of the first substrate provided with the first electrode layer, overlapping the orthographic projection of the first driving electrode on the first substrate with the orthographic projection of the second driving electrode on the first substrate, and overlapping the orthographic projection of the first electrode on the first substrate with the orthographic projection of the second electrode on the first substrate.
2. The method of manufacturing a micromechanical switch according to claim 1, characterized in that after manufacturing a second electrode layer on a side of the second sub-protective layer remote from the second substrate, the method further comprises, before etching to form the switch structure:
and preparing a support column on one side of the second driving electrode far away from the second substrate, wherein the support column is positioned at one end of the second driving electrode far away from the second electrode.
3. The method of manufacturing a micromechanical switch according to claim 2, characterized in that before manufacturing a first electrode layer on one side of the first substrate, the method of manufacturing further comprises:
Etching the first substrate to form a first through hole and a second through hole, wherein the first through hole and the second through hole are communicated with the surface of the first substrate, on which the first electrode layer is required to be arranged, and the other surface opposite to the surface;
And filling metal into the first through hole and the second through hole respectively to form a first metal interconnection and a second metal interconnection, wherein the first metal interconnection is used for being electrically connected with the second driving electrode through the support column, and the second metal interconnection is used for being electrically connected with the first electrode.
4. A method of fabricating a micromechanical switch according to claim 3, characterized in that before filling metal into the first and second vias to form first and second metal interconnects, the method further comprises:
And preparing a first insulating layer and a second insulating layer on the inner wall of the first through hole and the inner wall of the second through hole respectively.
5. The method of manufacturing a micromechanical switch according to claim 1, characterized in that after manufacturing a second electrode layer on a side of the second sub-protective layer remote from the second substrate, the method further comprises, before etching to form the switch structure:
And preparing a sealing metal bonding layer on one side of the second driving electrode far away from the second substrate, wherein the orthographic projection of the sealing metal bonding layer on the second substrate is positioned outside the orthographic projection of the monocrystalline silicon beam on the second substrate.
6. A micromechanical switch, characterized in that it is produced by a method of producing a micromechanical switch according to any one of claims 1 to 5, comprising:
A first substrate;
the first electrode layer comprises a first driving electrode and a first electrode which is arranged at intervals with the first driving electrode;
The switch structure is positioned on one side of the first electrode layer away from the first substrate and is arranged at intervals with the first electrode layer, and comprises a monocrystalline silicon beam and a protective layer for coating the monocrystalline silicon beam;
The second electrode layer is positioned on one side of the protective layer facing the first electrode layer, and comprises a second driving electrode and a second electrode which is arranged at intervals with the second driving electrode;
the first driving electrode can drive the second driving electrode to drive the monocrystalline silicon beam to deflect towards the direction close to the first substrate, so that the first pole is contacted with the second pole.
7. The micromechanical switch according to claim 6, characterized in that the micromechanical switch further comprises a second substrate on a side of the switch structure remote from the first substrate, a receiving space for receiving the monocrystalline silicon beam is provided between the second substrate and the first substrate, the second substrate is connected to the first substrate by means of a sealing metal bonding layer for sealing the receiving space.
8. The micromechanical switch according to claim 6, characterized in that the first substrate is provided with a first via and a second via, the first via and the second via communicating the surface of the first substrate facing towards the switch structure and the surface facing away from the switch structure, a first metal interconnect being provided in the first via, a second metal interconnect being provided in the second via, the first metal interconnect being electrically connected to the second drive electrode, the second metal interconnect being electrically connected to the first electrode.
9. The micromechanical switch according to claim 8, characterized in that a first insulating layer is provided between the inner wall of the first via and the first metal interconnect, and a second insulating layer is provided between the inner wall of the second via and the second metal interconnect.
10. The micromechanical switch according to claim 6, characterized in that the material of the second pole is ruthenium, nickel or cobalt.
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| CN102164848A (en) * | 2008-09-25 | 2011-08-24 | 罗伯特·博世有限公司 | Micromechanical component and method for the production thereof |
| CN102874737A (en) * | 2011-07-12 | 2013-01-16 | 法国原子能与替代能委员会 | micro system and/or nano system type of device and manufacturing method thereof |
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| JP3119255B2 (en) * | 1998-12-22 | 2000-12-18 | 日本電気株式会社 | Micromachine switch and method of manufacturing the same |
| CN112875641B (en) * | 2021-01-29 | 2024-01-26 | 矽力杰半导体技术(杭州)有限公司 | Integrated structure of MEMS device and circuit device and manufacturing method thereof |
| DE102021203574A1 (en) * | 2021-04-12 | 2022-10-13 | Robert Bosch Gesellschaft mit beschränkter Haftung | MEMS switch with cap contact |
| CN118859563A (en) * | 2023-04-26 | 2024-10-29 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN118315212A (en) * | 2024-05-11 | 2024-07-09 | 清华大学 | Electrostatically driven micromechanical switch and preparation method thereof |
| CN118684188A (en) * | 2024-06-25 | 2024-09-24 | 北京大学 | Wafer-level packaging structure for microelectronic devices and manufacturing method |
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| CN102164848A (en) * | 2008-09-25 | 2011-08-24 | 罗伯特·博世有限公司 | Micromechanical component and method for the production thereof |
| CN102874737A (en) * | 2011-07-12 | 2013-01-16 | 法国原子能与替代能委员会 | micro system and/or nano system type of device and manufacturing method thereof |
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