CN1196136A - Polysilicon resistor and method of manufacturing it - Google Patents
Polysilicon resistor and method of manufacturing it Download PDFInfo
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- CN1196136A CN1196136A CN96196923A CN96196923A CN1196136A CN 1196136 A CN1196136 A CN 1196136A CN 96196923 A CN96196923 A CN 96196923A CN 96196923 A CN96196923 A CN 96196923A CN 1196136 A CN1196136 A CN 1196136A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 56
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000002019 doping agent Substances 0.000 claims abstract description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 239000002800 charge carrier Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 14
- 239000013590 bulk material Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 125000004429 atom Chemical group 0.000 description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000013383 initial experiment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
一种电阻,具有多晶硅的电阻本体(11)和设置在电阻本体(11)上和/或电阻本体(11)内的电端子(23,15),所以电阻部分(13)形成在端子之间,并产生有用的电阻值。电阻本体的材料用受主类型和施主类型的掺杂剂掺杂。为了相当大程度地阻断晶界处的电荷载流子陷阱,并由此使电阻具有良好的稳定性,当在制造期间暴露到不同的物质时,用高浓度的施主掺杂,如果材料中仅存有施主原子基本不存在受主原子时,可认为材料近乎被重掺杂。特别是提供到电阻本体中的施主原子的浓度至少为3·1019cm－3,材料具有1000A的平均晶粒尺寸,使用磷作为施主类型的掺杂剂。
A resistor having a resistor body (11) of polysilicon and electrical terminals (23, 15) arranged on and/or in the resistor body (11), so that the resistor portion (13) is formed between the terminals , and produce useful resistance values. The material of the resistor body is doped with acceptor-type and donor-type dopants. In order to block the charge carrier traps at the grain boundaries to a considerable extent, and thus to have good stability of the resistance, it is doped with a high concentration of donors when exposed to different species during fabrication, if the material in When there are only donor atoms and almost no acceptor atoms, the material can be considered to be nearly heavily doped. In particular, the concentration of donor atoms provided into the resistor body is at least 3·10 19 cm -3 , the material has an average grain size of 1000A, and phosphorus is used as a donor type dopant.
Description
The present invention relates generally to be used in the electronic unit of electronic integrated circuit and/or the electronic unit of making by corresponding process, particularly the resistance of making by polysilicon and the manufacture method of this resistance thereof.
In the analog circuit that in as telecommunication system, uses, high to the stability requirement of the resistance in it.The absolute value that stability requirement shows as resistance must be lower than maximum can allow the limiting value that changes, and/or may the changing of resistance value that shows as the resistance in the resistance family that is included in coupling must meet each other that the ratio of resistance sizes can not depart from certain limiting value.A kind of resistance of adequate types is the resistance based on polysilicon (" polysilicon ").Can produce by normally used method in the manufacturing electronic integrated circuit field.
In electronic applications, used existing about 30 years time of polysilicon resistance.The method of making polysilicon is well-known, by in polysilicon, adding dopant, the method that the resistivity of polysilicon is controlled to the value that needs is also known, and this can " be used for the polysilicon that integrated circuit is used " referring to the article of Kluver AcademicPublishers T.Kamins in 1988.
Known problem is the stable not always satisfactory of it in the polysilicon resistance.During the different step in manufacturing operation and between the actual operating period of circuit, this resistance is easy to change their resistance value.Certainly, this and deviation planned value can endanger the work that resistance comprises circuit within it.Find that unsettled reason is that crystal boundary at polysilicon exists unsaturated " suspension " key.Unsaturated bond is equivalent to trap to electric charge carrier, thus electric charge is strapped in crystal boundary, influences the ability of transmission of materials electric charge carrier, thereby has influenced the resistivity of material and the overall electrical resistance of polysilicon resistance.
Now using compensation mixes and makes polysilicon resistance, this polysilicon resistance is not too responsive to the variation of concentration of dopant, and has lower temperature coefficient than the polycrystalline film of only mixing with a kind of dopant, can introduce only for reference here referring to disclosed European patent application EP-A20145926.According to the method that proposes in the document, with boron polysilicon film is carried out the background doping of p type, carry out n type counter doping with phosphorus after, material obtains clean p type and mixes.Therefore obtaining relevant with concentration of dopant and same relevant with temperature resistivity reduces.The background doping level that carries out with boron is no more than 5 * 10
19Cm
-3, and comprise 2,9 * 10 at most with the n type counter doping of prescribed concentration
18The journal of Korea S's Institute Of Electrical Engineering in 1987, the 24th phase, the article of the 81st page of J.B.Kim and M.S.Choi compares.
When in the polysilicon that hydrogen atom is joined doping, the unsaturated bond reaction in they and the polysilicon is also blocked them, makes them not be re-used as the trap of electric charge carrier.Yet the problem that exists with the unsaturated bond bonded hydrogen atom is that their bonding force is lower.When increasing temperature, therefore the bonding of hydrogen atom and silicon atom can rupture, and hydrogen atom will diffuse out from crystal boundary then.The resistance of the silicon body of handling with hydrogen changes in uncontrollable mode afterwards.When using polysilicon resistance during the manufacturing step of polysilicon resistance and in the circuit in reality, this temperature increase or rising all can take place.
And, form and be generally used for protecting in the passivating film of silicon nitride of finished product integrated circuit and parts and comprise a large amount of hydrogen (being generally 20-25%) by plasma CVD.
The same atom of making other type of using in the different processing step of polysilicon resistance also can be bonded on very responsiveness in the crystal boundary, the undersaturated dangling bonds, influences the stability of finished product resistance.
The problem to be solved in the present invention is how to provide and how to make to be used for having the height or enough polysilicon resistances of stability as analog circuit, thereby how to guarantee making and/or between the operating period, and resistance value etc. are not with the variation of uncontrollable mode.
More than about the solution of the problem of polysilicon resistance stability be: the condition in considering to make and the circuit of use, the unsaturated bond in the almost permanent property ground blocking-up crystal boundary.By using known method, the donor atom of quite big concentration is joined in the polycrystalline silicon material, carry out this blocking-up operation.When making resistance, to heat-treat during the step, the donor atom of many addings is diffused into the crystal boundary of silicon materials, and the blocking-up unsaturated bond also takes up position.Therefore the latter can not form the trap of the electric charge carrier that influences resistivity.The concentration of the donor atom that adds should be very big, makes only to have donor atom in the material, and this should think intimate heavy doping.For average grain size is 1000 and with the initial polycrystalline film of mixing of phosphorus, this means that donor concentration is at least 310
19Cm
-3
In order resistivity to be arranged on the value that needs, also acceptor atom should be joined in the silicon materials, the alms giver that advocated peace is present in the finished product polysilicon jointly.The concentration of being led should be with add be subjected to main the combination after, the concentration of the net charge charge carrier of generation makes material obtain the resistivity of needs.Because the part donor atom diffuses into crystal boundary, therefore do not contribute electric charge carrier, the concentration that needs of dopant is difficult for calculating, but must be by experiment suitably to determine definite concentration.
Acceptor atom uses boron at first, and phosphorus and arsenic are used as donor atom.Yet for all common acceptor materials, boron, aluminium, gallium or indium when they use separately or interosculate use, obviously can obtain comprising the identical barrier effect of similar stability.In addition, the same with other any acceptor material, all types of being led, the use of can using separately or interosculate of phosphorus, arsenic or antimony.The order of magnitude that joins in the polycrystalline silicon material alms giver that forms resistance and acceptor atom in addition is unimportant.The most important only is that the Cmin of donor atom is not less than the above rank that is considered to be close to highly doped material when only adding a kind of alms giver or several alms giver.P or n type that alms giver in the material and the net concentration of being led should make material can obtain the resistivity that needs and needing obtain.
In addition, and do not require that adding dopant atom in the technology period project uses with simple element form to alms giver or acceptor atom in the polysilicon, also can use by compound form, molecule in these compounds disconnects in introducing technology as long as they have, and foreign atom can penetrate in the material.
Only be suitable for thin polycrystalline film at first according to above doping method, but be suitable for all types of polysilicon resistances of having any resistance value with the donor doping of being advocated peace equally.
Word " resistance " is illustrated in all application of using polysilicon here, and the material of conduction current forms the ability of impedance electric current.
Connect after injecting by ion and recover dislocation and intracell dopant atom is distributed to the heat treatment of suitable position, with the alms giver and/or be subjected to main joining in the polysilicon.By adding dopant during making polycrystalline silicon material, or be diffused into subsequently in the polycrystalline material by dopant, dopant atom also joins in the material.In containing the atmosphere of one or more gases, carry out a kind of method in back by heat treatment polycrystalline material in the step therein, wherein comprise the alms giver and the acceptor atom of needs in the molecule in the gas.Is the material that contains the dopant atom of needs in the surface applied of polycrystalline material with diffuse dopants to the another kind of mode in the material, and concentration should be enough to make these atoms or to diffuse in the polycrystalline silicon material subsequently in the heat treated while.
Below with reference to accompanying drawing, the embodiment by indefiniteness at length introduces the present invention, wherein:
Fig. 1 is the generalized section of the resistance of polysilicon manufacturing,
Fig. 2 is the resistance shown in the last figure that amplifies of the subregion height of counter doping,
Fig. 3 is the accelerating weight result of experiment figure of polysilicon resistance,
Fig. 4 is the measurement result figure of the polysilicon film of having heat-treated in hydrogeneous atmosphere.
An example that in Fig. 1, has shown the section of polysilicon resistance.Described polysilicon resistance is made on the carrier structure 1 that contains integrated parts, has or be connected to the insulating barrier 3 of Si oxide at its top, for example can be by thermal oxidation but can certainly form described insulating barrier by deposit.In the embodiment that shows, bottom at carrier structure 1, be provided with silicon substrate 5 as the monocrystalline silicon plate, it on silicon substrate 5 silicon substrate region 7 with material diffusion zones of different within it, being the layer structure 9 that comprises dielectric material and polysilicon on silicon substrate region 7, is oxide layer 3 at the top of carrier structure 1.Oxide layer 3 is provided with platform or " table top " 11 that constitutes the resistance body, can find out to have for example rectangular shape from above, as can be seen from Figure 2 this resistance body.Resistance body 11 comprises inside or mid portion 13, and this part provides or determine the resistance value of resistance, and outer part 15 is used for contact, can carry out heavy doping, therefore has quite low resistance.
Being coated with oxide layer 17 at the assembly top that comprises carrier structure 1 and resistance body 11, is silicon nitride layer 19 on oxide layer 17, but at the top of assembly the layer that comprises active or passive electric device and electronic device is set also.This two-layer upper surface down to contact zone 15 is passed in hole 21.15 the surface in the contact zone, 21 inside provides zone 23 in the hole, to improve and the contacting of the aluminium conductive path 25 of the electrical connection that is used for resistance.Zone 23 comprises conductive diffusion barrier layer, and this layer comprises for example by next titanium or some titanium compound of coating diffusion.
The schematic diagram that in the local figure that the height of Fig. 2 amplifies, has also shown the counterdopant region of polysilicon resistance.Compare with above discussion, be subjected to main A, alms giver D, electric charge carrier trap T and hydrogen atom H how in crystal grain 31 or crystal boundary 33, to occupy their position respectively as can be seen from Figure.
With reference now to the manufacturing of case introduction polysilicon resistance,, at first introduces the manufacturing of the resistance of single doping.Example 1
By the CVD method (chemical vapor deposition) of routine, be that the policrystalline silicon film that thickness is about 5500 is formed on the top of the thermal silicon dioxide layer of 9000 at thickness.Relend the silicon dioxide that helps CVD to be about 5500 at the deposited on top thickness of polysilicon film.Afterwards, under 1050 ℃, carry out 30 minutes heat treatment, the crystallite dimension of restricting poly-silicon.Oxide is removed on the surface of corrosion polysilicon, afterwards with the energy of 80Kev with 110
19Cm
-3The boron of concentration is injected in the film.After this mask that photoetching is formed places on the polysilicon, and corrosion resistance afterwards is so that obtain the length of 200 μ m and the width of 20 μ m.Then, by the silicon dioxide that CVD is 6500 at 400 ℃ of deposition thicknesses, carry out 1000 ℃ about 45 minutes heat treatment afterwards.After this connect the common process flow process in the technical field of making electronic integrated circuit, comprise that corrosion contact hole, metallization, photoetching limit conductive path, carry out 20 minutes alloying under 420 ℃ in hydrogen, and to utilize thickness be that the silicon nitride layer of 9000 carries out passivation.Generate last-mentioned layer by plasma enhanced CVD (PECVD).Polycrystalline film is the p type, and resistivity is 605 ohms/square.
Resistance is installed in the ceramic envelope with conventional mode, then under 98 ℃ and 150 ℃, resistance is applied the voltage of 30V, in time cycle of 1000 hours nearly, to the Thermal Stress Experiment that resistance quickens, the resistance value of measuring resistance after 0,168,500 and 1000 hour.For 150 ℃ of higher temperature, the result is shown in solid line crooked among Fig. 3.As can be seen from Figure, the resistance value when initial with test process is compared, and resistance value increases by 2%.Having the so big resistance that changes for example generally is unsuitable for being used in the analog circuit.
In addition, the resistance that the polysilicon of manufacturing double doping is made, this double doping is a counter doping, as mentioned above, is used for blocking the electric charge carrier trap of crystal boundary.The quite high initial experiment of donor atom concentration that adds.In fact, donor atom is dense as can be seen, if they exist only in the material, can think that material is essentially heavy doping.For average grain size is the polycrystal film of 1000 , this means that donor concentration is at least 310
19Cm
-3Example 2
According to example 1, be 810 for 80Kev dosage at energy
19Cm
-3Condition under on polysilicon film, inject boron, going at energy afterwards is 13.610 for 120Kev dosage
19Cm
-3Condition under inject phosphorus.Use-case 1 identical mode is made resistance by the polysilicon film that obtains.Polycrystalline film in the resistance is the n type, and resistivity is 1020 ohms/square.
Resistance is installed on the ceramic envelope, carries out 98 and 150 ℃ of acceleration Thermal Stress Experiments then up to 1000 hours.The variation of resistance value is illustrated by the dashed curve among Fig. 32 under the high temperature, and the resistance value when initial with test is compared, and the increase of resistance value is less than 1% as can be seen.This expression can obtain stable effect according to the resistance of the method manufacturing of introducing here.Example 3
According to example 1, the corrosion silicon face removes oxide on polysilicon film, is 410 at energy for 80Kev dosage afterwards
19Cm
-3Condition under inject boron, be 9.610 at energy for 120Kev dosage afterwards
19Cm
-3Condition under inject arsenic.Use-case 1 identical mode is made resistance by the polysilicon film that obtains.Polycrystalline film in the resistance is the n type, and resistivity is 699 ohms/square.
Resistance is installed on the ceramic envelope, carries out 98 and 150 ℃ of acceleration Thermal Stress Experiments then up to 1000 hours.Changes in resistance amount in the example 2 of these changes in resistance amounts and doped with boron and phosphorus is basic identical as can be seen.Example 4
According to example 1, the corrosion silicon face removes oxide on polysilicon film, is 810 at energy for 80Kev dosage afterwards
19Cm
-3Condition under inject boron, be 510 at energy for 120Kev dosage afterwards
-19Cm
-3Condition under inject arsenic.Use-case 1 identical mode is made resistance by the polysilicon film that obtains.Polycrystalline film in the resistance is the p type, and resistivity is 241 ohms/square.
Resistance is installed on the ceramic envelope, carries out 98 and 150 ℃ of acceleration Thermal Stress Experiments then up to 1000 hours.Changes in resistance amount in the example 1 of these changes in resistance amounts and doped with boron and phosphorus is basic identical as can be seen.
Owing to comprise hydrogen in the passivating film of the silicon nitride of making by plasma enhanced CVD, so compare with above discussion, in the time of in being exposed to hydrogen atmosphere, it is very important that the film of making does not change their resistance value or stability reduction this point.Be exposed to according to many films of above example manufacturing and contain in the hydrogen atmosphere of nitrogen that volume ratio is 10% hydrogen and 90%, under 420 ℃, carry out 20 minutes accelerated tests.Measured resistance value before hydrogen treat and afterwards, the variation of measuring the relevant resistance value of the resistance value of calculating when initial with experiment.In Fig. 4, shown the result who measures.According to the membrane change maximum that the example 1 of single doping is made, in Fig. 4 curve 1.Curve 2 expression among Fig. 4 is with boron and phosphorus counter doping but the result of the very little film of phosphorus concentration.Only surpass 310 at phosphorus concentration
19Cm
-3Situation under, the hydrogen-sensitivity of material significantly reduces, and sees the curve 3 among Fig. 4.
Claims (8)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9503198A SE504969C2 (en) | 1995-09-14 | 1995-09-14 | Polysilicon resistor and method for making one |
| SE9503198-5 | 1995-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1196136A true CN1196136A (en) | 1998-10-14 |
Family
ID=20399492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96196923A Pending CN1196136A (en) | 1995-09-14 | 1996-09-13 | Polysilicon resistor and method of manufacturing it |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0850484A1 (en) |
| JP (1) | JPH11512565A (en) |
| KR (1) | KR19990036386A (en) |
| CN (1) | CN1196136A (en) |
| AU (1) | AU7004896A (en) |
| CA (1) | CA2229451A1 (en) |
| SE (1) | SE504969C2 (en) |
| WO (1) | WO1997010606A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378958C (en) * | 2003-12-22 | 2008-04-02 | 上海贝岭股份有限公司 | Method for making polysilicon high-ohmic resistor of integrated circuit |
| CN100388463C (en) * | 2005-01-27 | 2008-05-14 | 国际商业机器公司 | Method for manufacturing precision silicon-containing resistor |
| US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE511816C3 (en) * | 1996-06-17 | 2000-01-24 | Ericsson Telefon Ab L M | Resistors comprising a polycrystalline silicon resistor body and a process for producing such a |
| SE513116C2 (en) | 1998-11-13 | 2000-07-10 | Ericsson Telefon Ab L M | Polysilicon resistors and ways of making them |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109260A (en) * | 1983-11-15 | 1985-06-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compensated polycrystalline silicon resistive element |
-
1995
- 1995-09-14 SE SE9503198A patent/SE504969C2/en not_active IP Right Cessation
-
1996
- 1996-09-13 JP JP9511899A patent/JPH11512565A/en active Pending
- 1996-09-13 CN CN96196923A patent/CN1196136A/en active Pending
- 1996-09-13 AU AU70048/96A patent/AU7004896A/en not_active Abandoned
- 1996-09-13 EP EP96931342A patent/EP0850484A1/en not_active Withdrawn
- 1996-09-13 CA CA002229451A patent/CA2229451A1/en not_active Abandoned
- 1996-09-13 KR KR1019980701055A patent/KR19990036386A/en not_active Ceased
- 1996-09-13 WO PCT/SE1996/001148 patent/WO1997010606A1/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378958C (en) * | 2003-12-22 | 2008-04-02 | 上海贝岭股份有限公司 | Method for making polysilicon high-ohmic resistor of integrated circuit |
| CN100388463C (en) * | 2005-01-27 | 2008-05-14 | 国际商业机器公司 | Method for manufacturing precision silicon-containing resistor |
| US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| SE9503198D0 (en) | 1995-09-14 |
| CA2229451A1 (en) | 1997-03-20 |
| JPH11512565A (en) | 1999-10-26 |
| EP0850484A1 (en) | 1998-07-01 |
| KR19990036386A (en) | 1999-05-25 |
| WO1997010606A1 (en) | 1997-03-20 |
| SE9503198L (en) | 1997-03-15 |
| SE504969C2 (en) | 1997-06-02 |
| AU7004896A (en) | 1997-04-01 |
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