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CN119575748A - Photolithography mask with nanometer-scale graphic size and preparation method thereof - Google Patents

Photolithography mask with nanometer-scale graphic size and preparation method thereof Download PDF

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Publication number
CN119575748A
CN119575748A CN202411839286.2A CN202411839286A CN119575748A CN 119575748 A CN119575748 A CN 119575748A CN 202411839286 A CN202411839286 A CN 202411839286A CN 119575748 A CN119575748 A CN 119575748A
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China
Prior art keywords
mask
layer
photonic crystal
transparent substrate
mask layer
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Pending
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CN202411839286.2A
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Chinese (zh)
Inventor
王峰
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Suzhou Ruiermei Photoelectric Technology Co ltd
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Suzhou Ruiermei Photoelectric Technology Co ltd
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Application filed by Suzhou Ruiermei Photoelectric Technology Co ltd filed Critical Suzhou Ruiermei Photoelectric Technology Co ltd
Priority to CN202411839286.2A priority Critical patent/CN119575748A/en
Publication of CN119575748A publication Critical patent/CN119575748A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

本发明公开了一种具有纳米级图形化尺寸的光刻掩膜版及其制备方法。本发明的光刻掩膜版包括具有第一表面和第二表面的透明基板，所述透明基板的第一表面设置有掩膜层，所述掩膜层设置有纳米级图形化结构，所述透明基板的第二表面设置有光子晶体增透层；所述掩膜层的纳米级图形化结构和光子晶体增透层通过纳米压印模板压印后刻蚀得到。采用纳米压印方式制备，制作成本低，掩膜版图形化最小特征尺寸线宽可以达到纳米级，可用于制备纳米级线宽的芯片结构。其次在曝光面做了光子晶体增透层，能够提高紫外光的增透性，从而在光刻工艺中减少曝光时间，不仅提高产能，而且还延长了紫外灯部件的使用寿命，同时减少了紫外光的反射，对入射紫外光的光路均匀性具有一定的帮助。

The present invention discloses a photolithography mask with nanometer-scale graphic size and a preparation method thereof. The photolithography mask of the present invention comprises a transparent substrate having a first surface and a second surface, wherein the first surface of the transparent substrate is provided with a mask layer, wherein the mask layer is provided with a nanometer-scale graphic structure, and the second surface of the transparent substrate is provided with a photonic crystal anti-reflection layer; the nanometer-scale graphic structure of the mask layer and the photonic crystal anti-reflection layer are obtained by etching after imprinting with a nanoimprint template. The preparation is carried out by nanoimprinting, and the production cost is low. The minimum feature size line width of the mask graphic can reach the nanometer level, and can be used to prepare a chip structure with a nanometer-scale line width. Secondly, a photonic crystal anti-reflection layer is made on the exposure surface, which can improve the anti-reflection of ultraviolet light, thereby reducing the exposure time in the photolithography process, which not only improves the production capacity, but also prolongs the service life of the ultraviolet lamp components, while reducing the reflection of ultraviolet light, which has a certain help to the uniformity of the optical path of the incident ultraviolet light.

Description

Photoetching mask plate with nanoscale graphical size and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor micro-nano processing, and particularly relates to a photoetching mask plate with nanoscale graphical dimensions and a preparation method thereof.
Background
The authoritative data of the '2020-2026 China mask industry operation current situation and development prospect analysis report' published by the intelligent research shows that the global lithographic mask market scale for semiconductors reaches 41 hundred million dollars in 2019, wherein the global demand of the China mask accounts for 56%, the U.S. Funix and Japanese letterpress and DNP printing accounts for 82% of the global market share in the global market, and the mask product seriously depends on foreign manufacturers and has low localization rate. Although the development of the semiconductor industry in China began late, china has become the largest semiconductor consumer world worldwide by virtue of the tremendous market volume and production population. The photoetching mask is a key link of the whole semiconductor industry, and the semiconductor industry can keep 20% -30% growth in the next years according to the predicted data of CSIA, saidi intelligent library, SEMI and other authoritative institutions along with the increase of the investment of the semiconductor industry in China. With the great development of the semiconductor industry, the demand for semiconductor masks has also exploded.
The traditional semiconductor mask plate is divided into a master plate and a sub plate, wherein the master plate is prepared by a laser direct writing mode, the production efficiency is low, the sub plate is obtained by copying the master plate through a photoetching process, the preparation process is complex, the preparation equipment is expensive, the equipment required for preparing the nano-scale line width mask plate is more advanced, the resolution requirement is higher, the cost is relatively high, and the preparation efficiency is low. This series of problems has plagued further developments throughout the industry.
The Chinese patent with publication number CN 105225279 discloses a mask plate, a preparation method and a patterning method thereof, wherein the mask plate comprises a mask substrate, a plurality of nano-protrusions formed on the mask substrate, a space between the nano-protrusions and a shielding layer covering the surfaces of the nano-protrusions. The nano-bump has the effects of reflection and reflection reduction and is arranged on the mask substrate, but the mask layer is not patterned, and a chip structure with a nano-level line width cannot be prepared. And the nano-bump has limited effect on the anti-reflection of ultraviolet light.
Disclosure of Invention
Aiming at the technical problems, the invention aims to provide the photoetching mask plate with the nanoscale graphical size and the preparation method thereof, the preparation is carried out in a nano imprinting mode, the preparation cost is low, the line width of the minimum feature size (minimum CD size) of the mask plate graphical can reach nanoscale, and the mask plate graphical mask plate can be used for preparing chip structures with nanoscale line widths. And secondly, a photonic crystal anti-reflection layer is arranged on the exposure surface, so that the anti-reflection property of ultraviolet light can be improved, the exposure time is reduced in the photoetching process, the productivity is improved, the service life of an ultraviolet lamp part is prolonged, the reflection of ultraviolet light is reduced, and the ultraviolet light reflection type ultraviolet light lithography device has certain help to the light path uniformity of incident ultraviolet light. .
The technical scheme of the invention is as follows:
The utility model provides a photoetching mask version with nanoscale patterning size, includes the transparent substrate that has first surface and second surface, the first surface of transparent substrate is provided with the mask layer, the mask layer is provided with nanoscale patterning structure, the second surface of transparent substrate is provided with the photonic crystal anti-reflection layer.
In the preferred technical scheme, the mask layer is coated on the transparent substrate by utilizing a sputtering or electron beam evaporation process, the mask layer is made of one or more of a metal chromium material, a silicon material, a non-transparent aluminum oxide material and an iron oxide material, and the thickness of the mask layer is 100-200nm.
In a preferred technical scheme, a passivation layer is arranged on the mask layer, and the passivation layer is made of one or more of transparent aluminum oxide material, silicon nitride material and silicon oxide material.
In a preferred technical scheme, the thickness of the passivation layer is an odd number times of 1/4 wavelength of incident ultraviolet light.
In the preferred technical scheme, the nanoscale patterned structure of the mask layer and the photonic crystal anti-reflection layer are obtained by etching after imprinting by a nano imprinting template.
In the preferred technical scheme, the nano structure of the photonic crystal anti-reflection layer is a micro-lens structure arranged in an array, the radian of the micro-lens is 0.5-3 rad, and the height of the micro-lens is 150-400 nm.
The invention also discloses a preparation method of the photoetching mask plate with the nanoscale imaging size, which comprises the following steps:
s01, coating a mask layer on the first surface of the transparent substrate by utilizing a sputtering or electron beam evaporation process;
S02, setting a nanoscale graphical structure on the mask layer;
And S03, arranging a photonic crystal anti-reflection layer on the second surface of the transparent substrate.
In a preferred technical scheme, the method for setting the nanoscale patterned structure on the mask layer in the step S02 includes:
s21, coating UV photosensitive adhesive on the surface of the mask layer;
s22, imprinting the nano imprinting template with the patterned structure on the UV photosensitive adhesive, solidifying and forming by UV light irradiation, demolding and removing the nano imprinting template;
and S23, etching a corresponding patterned structure in a region without glue blocking through an ICP etching process, and removing the glue to form a mask layer with a nanoscale patterned structure.
In a preferred technical scheme, the manufacturing method of the photonic crystal anti-reflection layer in the step S03 comprises the following steps:
S31, coating UV photosensitive adhesive on the second surface of the transparent substrate;
S32, imprinting the nano imprinting template with the photonic crystal structure on the UV photosensitive adhesive, solidifying and forming by UV light irradiation, demolding and removing the nano imprinting template;
And S33, etching a corresponding photonic crystal structure in the area without glue blocking through an ICP etching process, and removing glue to form a photonic crystal anti-reflection layer.
In the preferred technical scheme, the nano structure of the photonic crystal anti-reflection layer is a micro-lens structure arranged in an array, the radian of the micro-lens is 0.5-3 rad, and the height of the micro-lens is 150-400 nm.
Compared with the prior art, the invention has the advantages that:
1. The method adopts the nano-imprinting mode for preparation, has low manufacturing cost, can achieve the nano-scale of the line width of the minimum feature size (the minimum CD size) of the mask plate patterning, and can be used for preparing the chip structure with the nano-scale line width. And secondly, a photonic crystal anti-reflection layer is arranged on the exposure surface, so that the anti-reflection property of ultraviolet light can be improved, the exposure time is reduced in the photoetching process, the productivity is improved, the service life of an ultraviolet lamp part is prolonged, the reflection of ultraviolet light is reduced, and the ultraviolet light reflection type ultraviolet light lithography device has certain help to the light path uniformity of incident ultraviolet light. The method has simple process and is suitable for large-scale batch production, and can be widely applied to the field of photoetching process processing of semiconductor nano-scale chip structures and other nano-scale line width optical mask fields.
2. In addition, the contact surface or the approaching surface of the photoresist is protected by a passivation layer with high compactness and high hardness, so that the scratch resistance of the photomask can be improved, the service life of the photomask is greatly prolonged, and the production cost is reduced.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
FIG. 1 is a schematic diagram of a lithographic reticle with nanoscale patterning dimensions according to the present invention;
FIG. 2 is a schematic diagram of the structure of the anti-reflection layer of the photonic crystal of the present invention;
FIG. 3 is a schematic illustration of a mask layer for nano-imprinting to produce a nano-scale patterned structure according to the present invention;
FIG. 4 is a schematic diagram of the nano-imprint prepared photonic crystal anti-reflection layer of the present invention.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
Examples:
as shown in fig. 1, a lithography mask plate with a nanoscale patterning size is prepared by adopting a nanoimprint method to prepare a patterning mask layer and a photonic crystal anti-reflection layer, the line width of the minimum feature size (minimum CD size) of the mask plate patterning can reach nanoscale, the mask plate patterning mask plate comprises a transparent substrate 4 with a first surface and a second surface, the first surface (contact surface or approaching surface of photoresist) of the transparent substrate 4 is provided with a mask layer 3, the mask layer is provided with a nanoscale patterning structure 5, and the second surface of the transparent substrate 4 is provided with a photonic crystal anti-reflection layer 9.
The transparent substrate 4 is made of one of transparent quartz material, transparent soda glass material and transparent sapphire single crystal material. The thickness of the transparent substrate ranges from 50 um to 2000 um.
The nanoscale patterned structure 5 of the mask layer 3 and the photonic crystal anti-reflection layer 9 are obtained by etching after imprinting by a nano imprinting template.
The thickness of the mask layer 3 ranges from 100 nm to 200nm, and the nano patterned structure 5 of the mask layer 3 can be provided with different patterned mask structures according to different mask requirements.
In a preferred embodiment, the patterned mask layer can also be protected by a passivation layer, the passivation layer is made of one of transparent aluminum oxide material, silicon nitride material and silicon oxide material which are compact in material and high in hardness, the passivation layer has an anti-scratch effect, the scratch resistance of a contact surface or a near surface of the photoresist of the mask can be improved, the thickness of the passivation layer is an odd multiple of 1/4 wavelength lambda of incident ultraviolet light, the thickness is more beneficial to avoiding reflection of the ultraviolet light, and the passivation layer can be prepared by sputtering or an electron beam evaporation process.
As shown in FIG. 2, the nano structure of the photonic crystal anti-reflection layer is a micro-lens 10 structure with the diameter d of 200-800 nm in array arrangement, the arrangement period setting range can be 400-1000 nm, the radian range of the micro-lens 10 can be 0.5-3 rad, and the height h of the micro-lens 10 is 150-400 nm.
The preparation method of the photoetching mask plate with the nanoscale patterning size comprises two steps, namely, preparing a mask layer with a nano patterning structure by nano imprinting, and preparing a photonic crystal anti-reflection layer by nano imprinting.
The method specifically comprises the following steps:
FIG. 3 is a schematic diagram of a mask layer for preparing a nano patterned structure by nano imprinting, which comprises the following specific steps:
(1) A transparent material is selected as a transparent substrate 4 of a mask, the transparent substrate 4 is one of a transparent quartz material, a transparent soda glass material and a transparent sapphire single crystal material, and the thickness range of the transparent substrate 4 is 50-2000um thick.
In a preferred embodiment, the transparent substrate 4 is a transparent sapphire single crystal material, and has a thickness of 500um.
(2) And (3) coating a mask layer 3 on the upper surface (namely, a photoresist contact surface or a photoresist approaching surface) of the transparent substrate 4 by utilizing one of sputtering or electron beam evaporation technology, wherein the mask layer 3 is made of one of a metal chromium material, a silicon material, a non-transparent aluminum oxide material and an iron oxide material, and the thickness of the mask layer 3 ranges from 100 nm to 200 nm.
In a preferred embodiment, the mask layer 3 is made of a mixture of silicon material and non-transparent aluminum oxide material, and has a thickness of 150um.
(3) The mask layer 3 is required to prepare different patterned mask structures according to different mask requirements, firstly, UV photoresist 2 is coated on the surface of the mask layer 3, then, a nano-imprint template 1 with a patterned structure is used for imprinting 21 on the UV photoresist 2, the UV photoresist 2 is solidified and molded through UV light irradiation 20, the nano-imprint template 1 is removed by demolding, then, the corresponding patterned structure is etched in a region without the blocking of the UV photoresist 2 by using an ICP etching (inductively coupled plasma etching) process, and finally, the nano-patterned mask structure layer 5 is formed by photoresist removal;
(4) The nano-patterned mask structure layer 5 is protected by a passivation layer 6, the passivation layer 6 is made of one of a transparent aluminum oxide material, a silicon nitride material and a silicon oxide material which are compact in material and high in hardness, the passivation layer 6 has an anti-scratch effect, the scratch resistance of a photoresist contact surface or a near surface of a mask can be improved, the thickness of the passivation layer 6 is an odd number multiple of 1/4 wavelength lambda of incident ultraviolet light, the thickness is more beneficial to avoiding reflection of the ultraviolet light, and the passivation layer 6 can be prepared by a sputtering or electron beam evaporation process.
In a preferred embodiment, the passivation layer 6 is made of transparent alumina material.
FIG. 4 is a schematic diagram of a photonic crystal anti-reflection layer prepared by nanoimprint lithography according to the present invention, and specifically includes the following steps:
(1) Firstly, coating UV photosensitive adhesive 8 on the other surface (namely an ultraviolet exposure surface) of the transparent substrate 4;
(2) Stamping the nano stamping template 7 with a photonic crystal structure on the UV photosensitive glue 8, and solidifying and forming the UV photosensitive glue 8 through UV light irradiation;
(3) Demolding and removing the nano-imprinting template 7;
(4) Then etching a corresponding photonic crystal patterned structure in a region without blocking by the UV photoresist 8 by using an ICP etching process;
(5) Finally photoresist is removed to form the photonic crystal anti-reflection layer 9. Finally, the needed photoetching mask plate with the nanoscale imaging size is manufactured.
The photoetching mask plate manufactured by the method has low manufacturing cost, the line width of the minimum feature size (the minimum CD size) of the mask plate in a graphical way can reach the nanometer level, the light transmission effect on an ultraviolet exposure lamp of a photoetching machine is good, the exposure efficiency is high, the ultraviolet reflection is reduced, the light path is uniform, and the method can be used for preparing chip structures with the nanometer level line width. The method has simple process and is suitable for large-scale batch production, and can be widely applied to the field of photoetching process processing of semiconductor nano-scale chip structures and other nano-scale line width optical mask fields.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.

Claims (8)

1.一种具有纳米级图形化尺寸的光刻掩膜版的制备方法，其特征在于，包括以下步骤：1. A method for preparing a photolithography mask having nanoscale patterning dimensions, characterized in that it comprises the following steps: S01：在透明基板的第一表面利用溅射或电子束蒸发工艺镀膜掩膜层；S01: coating a mask layer on a first surface of a transparent substrate by sputtering or electron beam evaporation process; S02：在掩膜层上设置纳米级图形化结构；S02: setting a nanoscale patterned structure on the mask layer; S03：在透明基板的第二表面设置光子晶体增透层；S03: Disposing a photonic crystal anti-reflection layer on the second surface of the transparent substrate; 所述步骤S02在掩膜层上设置纳米级图形化结构的方法包括：The method of setting a nanoscale patterned structure on the mask layer in step S02 includes: S21：在掩膜层的表面涂UV感光胶；S21: Apply UV photosensitive adhesive on the surface of the mask layer; S22：用带有图形化结构的纳米压印模板压印在UV感光胶上，通过UV光照射固化成型，脱模取下纳米压印模板；S22: Imprinting a nanoimprint template with a patterned structure on a UV photosensitive adhesive, curing the nanoimprint template by UV light irradiation, and demolding the nanoimprint template; S23：通过ICP刻蚀工艺在没有胶阻挡的区域刻蚀出相应的图形化结构，最后去胶形成具有纳米级图形化结构的掩膜层。S23: etching a corresponding patterned structure in an area without resist blocking by an ICP etching process, and finally removing the resist to form a mask layer with a nanoscale patterned structure. 2.根据权利要求1所述的具有纳米级图形化尺寸的光刻掩膜版的制备方法，其特征在于，所述步骤S03光子晶体增透层的制作方法包括：2. The method for preparing a photolithography mask with nanometer-scale patterning size according to claim 1, characterized in that the method for preparing the photonic crystal anti-reflection layer in step S03 comprises: S31：在透明基板的第二表面涂UV感光胶；S31: Applying UV photosensitive adhesive on the second surface of the transparent substrate; S32：用带有光子晶体结构的纳米压印模板压印在UV感光胶上，通过UV光照射固化成型，脱模取下纳米压印模板；S32: Imprinting a nanoimprint template with a photonic crystal structure on a UV photosensitive adhesive, curing the template by UV light irradiation, and removing the nanoimprint template by demoulding; S33：通过ICP刻蚀工艺在没有胶阻挡的区域刻蚀出相应的光子晶体结构，最后去胶形成光子晶体增透层。S33: etching a corresponding photonic crystal structure in an area without glue blocking by an ICP etching process, and finally removing the glue to form a photonic crystal transmittance-enhancing layer. 3.根据权利要求2所述的具有纳米级图形化尺寸的光刻掩膜版的制备方法，其特征在于，所述光子晶体增透层的纳米结构为阵列排布的微透镜结构，所述微透镜的弧度为0.5～3rad，所述微透镜的高度为150～400nm。3. The method for preparing a photolithography mask with nanoscale patterned dimensions according to claim 2 is characterized in that the nanostructure of the photonic crystal anti-reflection layer is an array-arranged microlens structure, the curvature of the microlens is 0.5 to 3 rad, and the height of the microlens is 150 to 400 nm. 4.一种具有纳米级图形化尺寸的光刻掩膜版，其特征在于，利用权利要求1～3任意一项所述的方法制备而成。4. A photolithography mask with nanometer-scale patterning dimensions, characterized in that it is prepared by the method described in any one of claims 1 to 3. 5.根据权利要求4所述的具有纳米级图形化尺寸的光刻掩膜版，其特征在于，包括具有第一表面和第二表面的透明基板，所述透明基板的第一表面设置有掩膜层，所述掩膜层设置有纳米级图形化结构，所述透明基板的第二表面设置有光子晶体增透层。5. The photolithography mask with nanoscale patterned dimensions according to claim 4 is characterized in that it comprises a transparent substrate having a first surface and a second surface, wherein the first surface of the transparent substrate is provided with a mask layer, the mask layer is provided with a nanoscale patterned structure, and the second surface of the transparent substrate is provided with a photonic crystal anti-reflection layer. 6.根据权利要求5所述的具有纳米级图形化尺寸的光刻掩膜版，其特征在于，所述掩膜层利用溅射或电子束蒸发工艺镀膜在透明基板上，所述掩膜层的材质为金属铬材料、硅材料、非透明氧化铝材料、氧化铁材料中的一种或多种混合，所述掩膜层的厚度为100-200nm。6. The photolithography mask with nanoscale graphic dimensions according to claim 5 is characterized in that the mask layer is coated on a transparent substrate using a sputtering or electron beam evaporation process, the material of the mask layer is a mixture of one or more of metallic chromium materials, silicon materials, non-transparent aluminum oxide materials, and iron oxide materials, and the thickness of the mask layer is 100-200nm. 7.根据权利要求6所述的具有纳米级图形化尺寸的光刻掩膜版，其特征在于，所述掩膜层上设置有钝化层，所述钝化层材质为透明氧化铝材料、氮化硅材料、氧化硅材料中的一种或多种混合。7. The photolithography mask with nanoscale patterning size according to claim 6 is characterized in that a passivation layer is provided on the mask layer, and the passivation layer is made of a mixture of one or more of transparent aluminum oxide material, silicon nitride material, and silicon oxide material. 8.根据权利要求7所述的具有纳米级图形化尺寸的光刻掩膜版，其特征在于，所述钝化层的厚度为入射紫外光的1/4波长的奇数倍。8 . The photolithography mask with nanoscale patterning dimensions according to claim 7 , wherein the thickness of the passivation layer is an odd multiple of 1/4 wavelength of the incident ultraviolet light.
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