CN119493332B - Mask process correction method, device, equipment and storage medium - Google Patents
Mask process correction method, device, equipment and storage medium Download PDFInfo
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- CN119493332B CN119493332B CN202510077266.4A CN202510077266A CN119493332B CN 119493332 B CN119493332 B CN 119493332B CN 202510077266 A CN202510077266 A CN 202510077266A CN 119493332 B CN119493332 B CN 119493332B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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Abstract
本发明涉及集成电路生产领域，特别是涉及一种掩膜工艺校正方法、装置、设备及存储介质，通过接收原始掩膜图案及目标仿真图案；将所述原始掩膜图案转换为多个边缘段围成的图形；通过预训练的校正集约模型对所述原始掩膜图案进行仿真模拟，得到各个所述边缘段对应的掩膜工艺偏差值；根据所述原始掩膜图案与所述目标仿真图案，确定各个所述边缘段的原始设计偏差值；根据所述原始设计偏差值与所述掩膜工艺偏差值确定各个所述边缘段对应的边缘放置误差；根据所述边缘放置误差对对应的边缘段的位置进行调整，得到校正掩膜图案。本发明仅对边缘段进行仿真，大大提升了运行速度，也保证了较高的计算精度。
The present invention relates to the field of integrated circuit production, and in particular to a mask process correction method, device, equipment and storage medium, which receives an original mask pattern and a target simulation pattern; converts the original mask pattern into a figure surrounded by multiple edge segments; simulates the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to each edge segment; determines the original design deviation value of each edge segment according to the original mask pattern and the target simulation pattern; determines the edge placement error corresponding to each edge segment according to the original design deviation value and the mask process deviation value; adjusts the position of the corresponding edge segment according to the edge placement error to obtain a corrected mask pattern. The present invention only simulates the edge segment, which greatly improves the running speed and ensures a high calculation accuracy.
Description
Technical Field
The present invention relates to the field of integrated circuit production, and in particular, to a mask process correction method, device, apparatus and storage medium.
Background
Mask process correction (Mask Process Correction, i.e., MPC) is to correct the electron beam exposure pattern so that the final mask pattern produced coincides with the target mask pattern when the mask is produced using the electron beam exposure and etching processes. Masks used in lithographic processes for large scale integrated circuit fabrication are typically created by electron beam exposure and etching processes. There is a difference between the final mask pattern obtained by the manufacturing and the electron beam exposure pattern due to the effects of electron beam scattering, etching deviation, and the like. As shown in fig. 1-1, assuming that the electron beam exposure pattern and the target mask pattern are identical, the final mask pattern produced has a certain deviation from the target mask pattern, as shown in fig. 1-2. Therefore, mask process correction (Mask Process Correction, i.e., MPC) techniques have been introduced in advanced photolithography process runs (28 nm and below). As shown in fig. 1-3, the electron beam exposure pattern is corrected based on the target mask pattern such that the resulting final mask pattern is closer to the target mask pattern, as shown in fig. 1-4.
Mask process corrections include both rule-based and model-based. In model-based mask process correction, a mask process correction model is first created that predicts the final mask pattern that will result after the mask manufacturing process for a given electron beam exposure pattern. And then establishing a mask process correction program and running the correction program on the target mask pattern. As shown in fig. 2-1, when the mask correction procedure is run, edge segments of the original mask pattern are cut, and control points are placed on the edge segments. And calculating edge placement errors (EDGE PLACEMENT Error, or EPE) of the control points according to the mask process correction model, and finally, moving the edge segments to correct based on the edge placement errors. The calculation of the edge placement error is typically based on a two-dimensional dense simulation grid, as shown in fig. 2-2. Since the edge segments do not fall exactly on the simulation grid, interpolation is also required during the simulation calculation. Compared with the mask process correction based on rules, the mask process correction based on the model needs to carry out a large number of simulation calculations, and the operation speed is obviously slowed down while the accuracy is improved.
Therefore, how to combine the high correction accuracy and the high processing speed in the mask process correction is a problem to be solved by the skilled in the art.
Disclosure of Invention
The invention aims to provide a mask process correction method, a mask process correction device, mask process correction equipment and a storage medium, so as to solve the problem that correction accuracy and processing speed cannot be considered in mask process correction in the prior art.
In order to solve the above technical problems, the present invention provides a mask process correction method, including:
Receiving an original mask pattern and a target simulation pattern;
performing edge segment segmentation on the original mask pattern, and converting the original mask pattern into a pattern surrounded by a plurality of edge segments;
Performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, wherein the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation;
Determining original design deviation values of the edge sections according to the original mask patterns and the target simulation patterns;
Determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values;
And adjusting the positions of the corresponding edge sections according to the edge placement errors to obtain corrected mask patterns.
Optionally, in the mask process correction method, the correction set model calculates a mask process deviation value of the edge segment by:
B=C+EB(I0)+ET(x,y);
Wherein B is the mask process deviation value, C is the overall deviation, the overall deviation is a constant, EB (I 0) is the electron beam exposure deviation, and ET (x, y) is the etching deviation.
Optionally, in the mask process correction method, before calculating the mask process deviation value of each edge segment, the method further includes:
judging whether the length of each edge section exceeds a preset critical length or not;
correspondingly, performing simulation on the edge section through a pre-trained correction intensive model to obtain a corresponding mask process deviation value, wherein the method comprises the following steps of:
When the length of the edge section exceeds the critical length, performing simulation on the edge section through a pre-trained one-dimensional correction intensive model to obtain a corresponding mask process deviation value;
And when the length of the edge section does not exceed the critical length, performing simulation on the edge section through a pre-trained two-dimensional correction intensive model to obtain a corresponding mask process deviation value.
Optionally, in the mask process correction method, a corresponding control point is set at a midpoint position of each edge segment;
the one-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge section through the following steps:
;
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x) is a one-dimensional mask image centered on the control point, G i is a gaussian function, b i is a corresponding linear coefficient, and I 0 is an energy threshold;
And/or, the one-dimensional correction intensive model calculates etching deviation corresponding to the edge section by the following formula:
;
wherein M (x) is a one-dimensional mask image centered on the control point, D j is a pattern density function based on M (x), and c j is a linear coefficient corresponding to D j.
Optionally, in the mask process correction method, a corresponding control point is set at a midpoint position of each edge segment;
The two-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge section through the following steps:
;
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x, y) is a gaussian function of the mask image G i centered on the control point, b i is a corresponding linear coefficient, and I 0 is an energy threshold;
and/or, the two-dimensional correction intensive model calculates etching deviation corresponding to the edge section by the following formula:
;
Wherein M (x, y) is a mask image centered on the control point, D j is a pattern density function based on M (x, y), and c j is a linear coefficient corresponding to D j.
Optionally, in the mask process correction method, after obtaining the corrected mask pattern, the method further includes:
Step one, performing simulation on the corrected mask pattern through the correction intensive model to obtain correction process deviation values corresponding to the edge sections;
Step two, determining correction design deviation values of the edge sections according to the correction mask patterns and the target simulation patterns;
Step three, determining edge placement errors of correction stages corresponding to the edge sections according to the correction design deviation values and the correction process deviation values;
Judging whether an edge section with the edge placement error larger than a preset first threshold value in a correction stage exists in the correction mask pattern;
When the edge section with the correction stage edge placement error larger than the preset first threshold value exists in the correction mask pattern, adjusting the edge section in the correction mask pattern according to the correction stage edge placement error, updating the correction mask pattern by using the pattern obtained after adjustment, and cycling the steps one to four until the edge section with the correction stage edge placement error larger than the preset first threshold value does not exist in the correction mask pattern.
Optionally, in the mask process correction method, in step four, after determining whether an edge segment with an edge placement error greater than a preset first threshold value in a correction stage exists in the corrected mask pattern, the method further includes:
judging whether the cycle times of the first step to the fourth step exceed a preset iteration threshold;
and stopping cycling when the cycle times of the first step to the fourth step exceed a preset iteration threshold value, and outputting the corrected mask pattern.
A mask process correction apparatus comprising:
the receiving module is used for receiving the original mask pattern and the target simulation pattern;
The segmentation module is used for carrying out edge segment segmentation on the original mask pattern and converting the original mask pattern into a pattern surrounded by a plurality of edge segments;
The simulation module is used for performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, wherein the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation;
the design deviation module is used for determining original design deviation values of the edge sections according to the original mask patterns and the target simulation patterns;
the process deviation module is used for determining edge placement errors corresponding to the edge sections according to the original design deviation value and the mask process deviation value;
and the adjusting module is used for adjusting the positions of the corresponding edge sections according to the edge placement errors to obtain corrected mask patterns.
A mask process correction apparatus comprising:
A memory for storing a computer program;
A processor for implementing the steps of the mask process correction method as described in any one of the above when executing the computer program.
A computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of a mask process correction method as described in any of the above.
The mask process correction method comprises the steps of receiving an original mask pattern and a target simulation pattern, cutting edge sections of the original mask pattern, converting the original mask pattern into a pattern formed by surrounding a plurality of edge sections, performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation by the correction intensive model, determining original design deviation values of the edge sections according to the original mask pattern and the target simulation pattern, determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values, and adjusting positions of the corresponding edge sections according to the edge placement errors to obtain the corrected mask pattern. When the edge placement error of each edge section is calculated based on the model, the two-dimensional dense grid commonly used in the related technology is not used, but only the edge section is simulated, so that the running speed is greatly improved, and the mask process deviation is calculated by using the calibrated correction intensive model comprising the integral deviation, the electron beam exposure deviation and the etching deviation, so that higher calculation precision is ensured. The invention also provides a mask process correction device, equipment and a storage medium with the beneficial effects.
Drawings
For a clearer description of embodiments of the invention or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
FIG. 1-1 is a schematic diagram of one embodiment of an uncorrected electron beam exposure pattern and a target mask pattern during a design phase;
FIG. 1-2 is a schematic diagram of the final mask pattern and the target mask pattern corresponding to FIG. 1-1;
FIGS. 1-3 are schematic diagrams of one embodiment of a corrected electron beam exposure pattern and a target mask pattern at a design stage;
FIGS. 1-4 are schematic diagrams of the final mask pattern and the target mask pattern corresponding to FIGS. 1-3;
FIG. 2-1 is a schematic diagram of an original mask pattern after edge segment segmentation;
FIG. 2-2 is a schematic diagram of a two-dimensional dense simulation grid based correction of edge segments;
FIG. 3 is a schematic flow chart of a mask process correction method according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an original mask pattern and a target simulation pattern according to an embodiment of the mask process correction method provided by the present invention;
FIG. 5 is a schematic diagram illustrating edge placement errors calculated in an embodiment of a mask process correction method according to the present invention;
FIG. 6 is a schematic flow chart of another embodiment of a mask process correction method according to the present invention;
Fig. 7 is a schematic structural diagram of a mask process correction device according to an embodiment of the present invention.
The system comprises a 100-receiving module, a 200-segmentation module, a 300-simulation module, a 400-design deviation module, a 500-process deviation module and a 600-adjustment module.
Detailed Description
In order to better understand the aspects of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The core of the present invention is to provide a mask process correction method, a flow diagram of one embodiment of which is shown in fig. 3, which is called embodiment one, including:
S101, receiving an original mask pattern and a target simulation pattern.
The original mask pattern is a mask design pattern, is a mask layout pattern in a system, and the target simulation pattern refers to a target shape pattern simulated by the original mask pattern. In some cases, the operator directly takes the simulated target shape pattern, i.e. the target simulation pattern, as the original mask pattern, as shown in fig. 1-1, where the edges of the electron beam exposure pattern (the diagonally filled portion, i.e. the original mask pattern in this embodiment) stored in the system completely coincide with the final target pattern (the wire frame area, i.e. the target simulation pattern in this embodiment).
S102, cutting edge segments of the original mask pattern, and converting the original mask pattern into a pattern surrounded by a plurality of edge segments.
And cutting the edge segments of the original mask pattern, and placing a control point at the center point of each edge segment. The cutting of the edge segments is performed according to a certain rule. Preferably, the edge segment length is shorter near the line end or corner.
S103, performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, wherein the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation.
As a specific embodiment, the correction intensive model calculates a mask process deviation value of the edge segment by the following formula (1):
B=C+EB(I0)+ET(x,y); (1)
Wherein B is the mask process deviation value, C is the overall deviation, the overall deviation is a constant, EB (I 0) is the electron beam exposure deviation, and ET (x, y) is the etching deviation.
Through a large number of theoretical calculation and practical inspection, the invention obtains a relatively accurate calculation method of the mask process deviation value, namely the mask process deviation value is split into the integral deviation, the electron beam exposure deviation and the etching deviation according to sources, and the formula (1) is simple addition of three values, and has the advantages of simple calculation, high calculation efficiency, less calculation force occupation and relatively high calculation accuracy.
S104, determining original design deviation values of the edge sections according to the original mask patterns and the target simulation patterns.
In this step, the difference between the original mask pattern and the target simulation pattern is determined, please refer to fig. 4, the contour line in fig. 4 is the original mask pattern, the dark area is the contour area of the target simulation pattern, the edge contour of the original mask pattern may be different from the edge contour of the target simulation pattern, and the edge of the original mask pattern is cut to obtain a plurality of edge segments in the previous step, so that the original mask pattern is compared with the target simulation pattern, and the distance between each edge segment and the target simulation pattern in the normal direction is determined as the original design deviation value, that is, the distance between the point a and the point B in fig. 4.
Of course, in some cases, the original mask pattern is the same as the target simulation pattern, and then the original design deviation values of all the edge segments in this step are all 0.
S105, determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values.
Referring to fig. 5, if the outside of the target simulation pattern is set to be positive and the inside is set to be negative, then when the edge segment a of the original mask pattern protrudes from the target simulation pattern by 2nm in the normal direction (refer to the B position in fig. 5), the original design deviation value is +2nm, and if the mask process deviation value of the edge segment a at this time is further +2nm, that is, the simulation pattern obtained by the original mask pattern simulation further protrudes from the target simulation pattern by 2nm at the position corresponding to the edge segment a (that is, the dotted line position in fig. 5, that is, the position shown by the C point), it can be determined that the edge placement error of the edge segment a at this time is +2nm) +(+2nm) = +4nm, that is, the edge segment a of the simulation pattern obtained by the original mask pattern simulation is outside the target simulation pattern, and the distance from the target simulation pattern is 4nm (the line end AC in fig. 5 corresponds to the edge placement error), and if the edge segment a is the edge-5 nm, that is the edge placement error of the simulation pattern is not longer than 3nm, that is the edge segment a of the original mask pattern is placed at this point at the 3 nm.
And S106, adjusting the positions of the corresponding edge sections according to the edge placement errors to obtain corrected mask patterns.
After knowing the edge placement error, the edge segment in the original mask pattern may be adjusted according to the edge placement error, for example, the edge placement error corresponding to the edge segment B may be directly adjusted reversely according to the edge placement error, that is, the edge segment B in the simulation result may retract inward by 8nm relative to the target simulation pattern, at this time, in this step, the edge segment B in the corrected mask pattern may be moved 8nm toward the outer side of the target simulation pattern, and at this time, the adjustment distance of the edge segment B may be equal to the edge placement error, or of course, the corresponding edge placement error may be multiplied by a preset coefficient to obtain the adjustment distance, for example, the preset coefficient is 0.5, and then the edge segment B should be adjusted 8nm×0.5=4 nm toward the outer side of the target simulation pattern.
As a preferred embodiment, before calculating the mask process deviation value of each edge segment, the method further comprises:
A1, judging whether the length of each edge section exceeds a preset critical length.
Correspondingly, performing simulation on the edge section through a pre-trained correction intensive model to obtain a corresponding mask process deviation value, wherein the method comprises the following steps of:
A2, when the length of the edge section exceeds the critical length, performing simulation on the edge section through a pre-trained one-dimensional correction intensive model to obtain a corresponding mask process deviation value.
A3, when the length of the edge section does not exceed the critical length, performing simulation on the edge section through a pre-trained two-dimensional correction intensive model to obtain a corresponding mask process deviation value.
It is clear that the step A2 and the step A3 are two conditions after the step A1 is judged, and no precedence relationship exists between the step A2 and the step A3.
In the preferred embodiment, the edge segments are classified into two types according to the length, that is, whether the length of the edge segments exceeds a preset critical length is judged, when the length of the edge segments exceeds the critical length, the edge segments can be regarded as one-dimensional graphs, a simplified one-dimensional correction intensive model is adopted in calculation, so that the calculation speed is further improved on the premise of ensuring higher calculation accuracy, and if the length of the edge segments does not exceed the critical length, the edge segments are regarded as two-dimensional long-strip graphs, calculation is performed by adopting a two-dimensional correction intensive model considering two dimension directions, and the calculation accuracy is further improved on the premise of ensuring higher calculation speed.
The calculation method of the element in the formula (1) is given below in different cases, specifically, the midpoint position of each edge section is provided with a corresponding control point;
When the edge section is too long, the edge section can be treated as a one-dimensional pattern, and the one-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge section through the following formula (2):
; (2)
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x) is a one-dimensional mask image centered on the control point, G i is a gaussian function, b i is a corresponding linear coefficient, and I 0 is an energy threshold.
After substituting the above data into the formula (2), the electron beam exposure deviation EB (I 0) required in the formula (1) is obtained from the inverse function of the formula (2).
Likewise, the one-dimensional correction intensive model calculates etching deviation corresponding to the edge segment by the following formula (3):
; (3)
wherein M (x) is a one-dimensional mask image centered on the control point, D j is a pattern density function based on M (x), and c j is a linear coefficient corresponding to D j.
Because the edge section is treated as an image, the mask image taking the control point as the center is taken as a one-dimensional image, namely M (x), so that the calculation force can be greatly saved, the cost is reduced, and the calculation efficiency is improved.
If the length of the edge segment is insufficient, the edge segment is not suitable to be used as a one-dimensional image, but is required to be used as a two-dimensional plane image, and the two-dimensional correction intensive model is imported, and the two-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge segment by the following formula (4):
; (4)
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x, y) is a gaussian function of the mask image G i centered on the control point, b i is a corresponding linear coefficient, and I 0 is an energy threshold.
The electron beam exposure deviation EB (I 0) required by the formula (1) can still be obtained by the inverse function of the formula (4).
Likewise, the two-dimensional correction intensive model calculates etching deviation corresponding to the edge segment by the following equation (5):
; (5)
Wherein M (x, y) is a mask image centered on the control point, D j is a pattern density function based on M (x, y), and c j is a linear coefficient corresponding to D j.
When the defect of the length of the edge section is detected, the two-dimensional correction intensive model which is closer to the actual situation is timely switched, and unlike the formula (2) and the formula (3), the mask image taking the control point as the center is taken as a two-dimensional image, namely M (x, y), so that calculation errors can be avoided, the accuracy of a calculation result is greatly improved, and the guiding significance on production is improved.
In the above-mentioned various types, the mask images M (x) and M (x, y) centered on the control point are obtained by rasterizing a part of the original mask pattern, and the mask pattern of the region centered on the control point is rasterized, which can be determined by itself according to the actual situation, and the present invention is not limited thereto.
The mask process correction method comprises the steps of receiving an original mask pattern and a target simulation pattern, cutting edge sections of the original mask pattern, converting the original mask pattern into a pattern formed by surrounding a plurality of edge sections, performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation by the correction intensive model, determining original design deviation values of the edge sections according to the original mask pattern and the target simulation pattern, determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values, and adjusting positions of the corresponding edge sections according to the edge placement errors to obtain the corrected mask pattern. When the edge placement error of each edge section is calculated based on the model, the two-dimensional dense grid commonly used in the related technology is not used, but only the edge section is simulated, so that the running speed is greatly improved, and the mask process deviation is calculated by using the calibrated correction intensive model comprising the integral deviation, the electron beam exposure deviation and the etching deviation, so that higher calculation precision is ensured.
On the basis of the specific embodiment, further processing is further performed on the obtained corrected mask pattern to obtain a second specific embodiment, and a corresponding flow diagram is shown in fig. 6, including:
S201, receiving an original mask pattern and a target simulation pattern.
S202, cutting edge segments of the original mask pattern, and converting the original mask pattern into a pattern surrounded by a plurality of edge segments.
S203, performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, wherein the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation.
S204, determining original design deviation values of the edge sections according to the original mask patterns and the target simulation patterns.
And S205, determining edge placement errors corresponding to the edge sections according to the original design deviation value and the mask process deviation value.
S206, adjusting the positions of the corresponding edge sections according to the edge placement errors to obtain corrected mask patterns.
S207, performing simulation on the corrected mask pattern through the corrected intensive model to obtain corrected process deviation values corresponding to the edge sections.
S208, determining correction design deviation values of the edge sections according to the correction mask patterns and the target simulation patterns.
And S209, determining edge placement errors of the correction stage corresponding to the edge segments according to the correction design deviation value and the correction process deviation value.
And S210, judging whether an edge section with the edge placement error larger than a preset first threshold value in the correction stage exists in the correction mask pattern.
S211, when an edge section with the correction stage edge placement error larger than a preset first threshold exists in the correction mask pattern, adjusting the edge section in the correction mask pattern according to the correction stage edge placement error, updating the correction mask pattern by using the pattern obtained after adjustment, and cycling the steps one to four until the edge section with the correction stage edge placement error larger than the preset first threshold does not exist in the correction mask pattern.
The difference between the present embodiment and the above embodiment is that the obtained correction mask pattern is further corrected and modified in the present embodiment, and the other steps are the same as those of the above embodiment, and are not repeated here.
In this embodiment, on the basis of the first embodiment, the obtained correction mask pattern is further subjected to cyclic correction, that is, the correction mask pattern is subjected to simulation, and it is checked whether the correction simulation pattern simulated by the correction mask pattern is sufficiently close to the target simulation pattern to determine whether correction is qualified, that is, whether an edge section with a correction stage edge placement error greater than a preset first threshold value exists in the correction mask pattern (the first threshold value can be set automatically according to actual conditions, such as 2nm or 3nm, etc.), if so, an edge section with an undesirable correction result is indicated, at this time, the edge section of the correction mask pattern is adjusted again by using the correction stage edge placement error, and then simulation is performed to determine whether the correction simulation is the closest or not until an edge section with a correction stage edge placement error greater than the preset first threshold value does not exist in the correction mask pattern.
Further, in the fourth step, after determining whether there is an edge segment with an edge placement error greater than a preset first threshold in the correction mask pattern, the method further includes:
b1, judging whether the cycle times of the first step to the fourth step exceed a preset iteration threshold.
The iteration threshold refers to the maximum number of allowed cycles
And B2, stopping cycling when the cycle times of the first step to the fourth step exceed a preset iteration threshold value, and outputting the corrected mask pattern.
If the number of times of circulation exceeds the iteration threshold, the edge section with the edge placement error larger than the preset first threshold still exists in the correction mask pattern, continuing circulation iteration is abandoned, the corresponding correction mask pattern is directly output, the fact that the individual mask patterns consume too much time to influence the follow-up procedure progress is avoided, meanwhile, staff can check the mask pattern and the circulation process, the reason why the circulation correction is still failed for many times is checked, and the efficiency of the whole production flow is improved.
The mask process correction device provided by the embodiment of the invention is described below, and the mask process correction device and the mask process correction method described above can be referred to correspondingly.
Fig. 7 is a block diagram of a mask process correction device according to an embodiment of the present invention, and referring to fig. 7, the mask process correction device may include:
a receiving module 100 for receiving an original mask pattern and a target simulation pattern;
The segmentation module 200 is configured to segment the edge segments of the original mask pattern, and convert the original mask pattern into a pattern surrounded by a plurality of edge segments;
The simulation module 300 is configured to perform simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge segments, where the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation;
a design deviation module 400, configured to determine an original design deviation value of each edge segment according to the original mask pattern and the target simulation pattern;
A process deviation module 500, configured to determine an edge placement error corresponding to each edge segment according to the original design deviation value and the mask process deviation value;
and the adjusting module 600 is configured to adjust the positions of the corresponding edge segments according to the edge placement errors, so as to obtain a corrected mask pattern.
As a preferred embodiment, the simulation module 300 includes:
an addition simulation unit, configured to cause the correction intensive model to calculate a mask process deviation value of the edge segment by the following formula (1):
B=C+EB(I0)+ET(x,y); (1)
Wherein B is the mask process deviation value, C is the overall deviation, the overall deviation is a constant, EB (I 0) is the electron beam exposure deviation, and ET (x, y) is the etching deviation.
As a preferred embodiment, the simulation module 300 further includes:
The critical judging unit is used for judging whether the length of each edge section exceeds a preset critical length;
The one-dimensional determining unit is used for carrying out simulation on the edge section through a pre-trained one-dimensional correction intensive model when the length of the edge section exceeds the critical length, so as to obtain a corresponding mask process deviation value;
And the two-dimensional determining unit is used for carrying out simulation on the edge section through a pre-trained two-dimensional correction intensive model to obtain a corresponding mask process deviation value when the length of the edge section does not exceed the critical length.
As a preferred embodiment, the midpoint position of each edge section is provided with a corresponding control point;
The simulation module 300 includes:
A one-dimensional electron beam unit, configured to make the one-dimensional correction intensive model calculate an electron beam exposure deviation corresponding to the edge segment according to the following formula (2):
; (2)
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x) is a one-dimensional mask image centered on the control point, G i is a gaussian function, b i is a corresponding linear coefficient, and I 0 is an energy threshold;
and/or the number of the groups of groups,
A one-dimensional etching unit, configured to make the one-dimensional correction intensive model calculate an etching deviation corresponding to the edge segment by the following formula (3):
; (3)
wherein M (x) is a one-dimensional mask image centered on the control point, D j is a pattern density function based on M (x), and c j is a linear coefficient corresponding to D j.
As a preferred embodiment, the midpoint position of each edge section is provided with a corresponding control point;
The simulation module 300 includes:
the two-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge section by the following formula (4):
; (4)
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x, y) is a gaussian function of the mask image G i centered on the control point, b i is a corresponding linear coefficient, and I 0 is an energy threshold;
and/or the number of the groups of groups,
A two-dimensional etching unit, configured to make the two-dimensional correction intensive model calculate an etching deviation corresponding to the edge segment by the following formula (5):
; (5)
Wherein M (x, y) is a mask image centered on the control point, D j is a pattern density function based on M (x, y), and c j is a linear coefficient corresponding to D j.
As a preferred embodiment, the adjusting module 600 further includes:
The correction simulation unit is used for performing step one, and performing simulation on the correction mask pattern through the correction intensive model to obtain correction process deviation values corresponding to the edge sections;
a correction deviation unit, configured to perform the second step, and determine correction design deviation values of the edge segments according to the correction mask pattern and the target simulation pattern;
the correction EPE unit is used for carrying out the third step, and determining the edge placement error of the correction stage corresponding to each edge section according to the correction design deviation value and the correction process deviation value;
An EPE judging unit, configured to perform step four, and judge whether an edge section with an edge placement error greater than a preset first threshold value in a correction stage exists in the correction mask pattern;
An adjustment updating unit, configured to perform step four, when an edge section with a correction stage edge placement error greater than a preset first threshold exists in the correction mask pattern, adjust the edge section in the correction mask pattern according to the correction stage edge placement error, and update the correction mask pattern with the pattern obtained after adjustment; and (3) cycling the steps one to four until no edge section with the edge placement error larger than a preset first threshold value in the correction stage exists in the correction mask pattern.
As a preferred embodiment, the adjusting module 600 further includes:
The iteration threshold judging unit is used for judging whether the cycle times of the first step to the fourth step exceed a preset iteration threshold or not;
And the loop stopping unit is used for stopping the loop and outputting the corrected mask pattern when the loop times of the first step to the fourth step exceed a preset iteration threshold.
The mask process correction device comprises a receiving module 100, a segmentation module 200, a simulation module 300 and an adjustment module 600, wherein the receiving module is used for receiving an original mask pattern and a target simulation pattern, the segmentation module 200 is used for carrying out edge segment segmentation on the original mask pattern, converting the original mask pattern into a pattern formed by a plurality of edge segments, the simulation module 300 is used for carrying out simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge segments, the correction intensive model is a model for calculating the mask process deviation values according to overall deviation, electron beam exposure deviation and etching deviation, the design deviation module 400 is used for determining original design deviation values of the edge segments according to the original mask pattern and the target simulation pattern, the process deviation module 500 is used for determining edge placement errors corresponding to the edge segments according to the original design deviation values and the mask process deviation values, and the adjustment module 600 is used for adjusting positions of the corresponding edge segments according to the edge placement errors to obtain corrected mask patterns. When the edge placement error of each edge section is calculated based on the model, the two-dimensional dense grid commonly used in the related technology is not used, but only the edge section is simulated, so that the running speed is greatly improved, and the mask process deviation is calculated by using the calibrated correction intensive model comprising the integral deviation, the electron beam exposure deviation and the etching deviation, so that higher calculation precision is ensured.
The mask process correction device of this embodiment is used to implement the foregoing mask process correction method, so that the detailed description of the mask process correction device can be found in the foregoing example portions of the mask process correction method, for example, the receiving module 100, the slicing module 200, the simulation module 300, the design deviation module 400, and the process deviation module 500, and the adjusting module 600 are respectively used to implement steps S101, S102, S103, S104, S105, and S106 in the foregoing mask process correction method, so that the detailed description of the embodiments of each portion will be omitted herein.
The invention also provides mask process correction equipment, which comprises the following steps:
A memory for storing a computer program;
A processor for implementing the steps of the mask process correction method as described in any one of the above when executing the computer program. The mask process correction method comprises the steps of receiving an original mask pattern and a target simulation pattern, cutting edge sections of the original mask pattern, converting the original mask pattern into a pattern formed by surrounding a plurality of edge sections, performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation by the correction intensive model, determining original design deviation values of the edge sections according to the original mask pattern and the target simulation pattern, determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values, and adjusting positions of the corresponding edge sections according to the edge placement errors to obtain the corrected mask pattern. When the edge placement error of each edge section is calculated based on the model, the two-dimensional dense grid commonly used in the related technology is not used, but only the edge section is simulated, so that the running speed is greatly improved, and the mask process deviation is calculated by using the calibrated correction intensive model comprising the integral deviation, the electron beam exposure deviation and the etching deviation, so that higher calculation precision is ensured.
The present invention also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor implements the steps of a mask process correction method as described in any of the above. The mask process correction method comprises the steps of receiving an original mask pattern and a target simulation pattern, cutting edge sections of the original mask pattern, converting the original mask pattern into a pattern formed by surrounding a plurality of edge sections, performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation by the correction intensive model, determining original design deviation values of the edge sections according to the original mask pattern and the target simulation pattern, determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values, and adjusting positions of the corresponding edge sections according to the edge placement errors to obtain the corrected mask pattern. When the edge placement error of each edge section is calculated based on the model, the two-dimensional dense grid commonly used in the related technology is not used, but only the edge section is simulated, so that the running speed is greatly improved, and the mask process deviation is calculated by using the calibrated correction intensive model comprising the integral deviation, the electron beam exposure deviation and the etching deviation, so that higher calculation precision is ensured.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It should be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative elements and steps are described above generally in terms of functionality in order to clearly illustrate the interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software modules may be disposed in Random Access Memory (RAM), memory, read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
The mask process correction method, the mask process correction device, the mask process correction equipment and the mask process correction storage medium provided by the invention are described in detail. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that the present invention may be modified and practiced without departing from the spirit of the present invention.
Claims (9)
1. A mask process correction method, comprising:
Receiving an original mask pattern and a target simulation pattern;
performing edge segment segmentation on the original mask pattern, and converting the original mask pattern into a pattern surrounded by a plurality of edge segments;
Performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, wherein the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation;
Determining original design deviation values of the edge sections according to the original mask patterns and the target simulation patterns;
Determining edge placement errors corresponding to the edge sections according to the original design deviation values and the mask process deviation values;
adjusting the positions of the corresponding edge sections according to the edge placement errors to obtain corrected mask patterns;
before calculating the mask process deviation value of each edge segment, the method further comprises:
judging whether the length of each edge section exceeds a preset critical length or not;
correspondingly, performing simulation on the edge section through a pre-trained correction intensive model to obtain a corresponding mask process deviation value, wherein the method comprises the following steps of:
When the length of the edge section exceeds the critical length, performing simulation on the edge section through a pre-trained one-dimensional correction intensive model to obtain a corresponding mask process deviation value;
And when the length of the edge section does not exceed the critical length, performing simulation on the edge section through a pre-trained two-dimensional correction intensive model to obtain a corresponding mask process deviation value.
2. The mask process correction method according to claim 1, wherein the correction set model calculates the mask process deviation value of the edge segment by:
B=C+EB(I0)+ET(x,y);
Wherein B is the mask process deviation value, C is the overall deviation, the overall deviation is a constant, EB (I 0) is the electron beam exposure deviation, and ET (x, y) is the etching deviation.
3. The mask process correction method according to claim 1, wherein a midpoint position of each of the edge segments is provided with a corresponding control point;
the one-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge section through the following steps:
;
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x) is a one-dimensional mask image centered on the control point, G i is a gaussian function, b i is a corresponding linear coefficient, and I 0 is an energy threshold;
And/or, the one-dimensional correction intensive model calculates etching deviation corresponding to the edge section by the following formula:
;
wherein M (x) is a one-dimensional mask image centered on the control point, D j is a pattern density function based on M (x), and c j is a linear coefficient corresponding to D j.
4. The mask process correction method according to claim 1, wherein a midpoint position of each of the edge segments is provided with a corresponding control point;
The two-dimensional correction intensive model calculates the electron beam exposure deviation corresponding to the edge section through the following steps:
;
Wherein I (EB) is an electron beam energy distribution in an upward direction perpendicular to the edge Duan Fang with the control point as an origin, M (x, y) is a gaussian function of the mask image G i centered on the control point, b i is a corresponding linear coefficient, and I 0 is an energy threshold;
and/or, the two-dimensional correction intensive model calculates etching deviation corresponding to the edge section by the following formula:
;
Wherein M (x, y) is a mask image centered on the control point, D j is a pattern density function based on M (x, y), and c j is a linear coefficient corresponding to D j.
5. The mask process correction method according to claim 1, further comprising, after obtaining the corrected mask pattern:
Step one, performing simulation on the corrected mask pattern through the correction intensive model to obtain correction process deviation values corresponding to the edge sections;
Step two, determining correction design deviation values of the edge sections according to the correction mask patterns and the target simulation patterns;
Step three, determining edge placement errors of correction stages corresponding to the edge sections according to the correction design deviation values and the correction process deviation values;
Judging whether an edge section with the edge placement error larger than a preset first threshold value in a correction stage exists in the correction mask pattern;
When the edge section with the correction stage edge placement error larger than the preset first threshold value exists in the correction mask pattern, adjusting the edge section in the correction mask pattern according to the correction stage edge placement error, updating the correction mask pattern by using the pattern obtained after adjustment, and cycling the steps one to four until the edge section with the correction stage edge placement error larger than the preset first threshold value does not exist in the correction mask pattern.
6. The method according to claim 5, wherein after determining whether there is an edge segment in the corrected mask pattern in which the edge placement error is greater than a preset first threshold in the correction stage in step four, further comprising:
judging whether the cycle times of the first step to the fourth step exceed a preset iteration threshold;
and stopping cycling when the cycle times of the first step to the fourth step exceed a preset iteration threshold value, and outputting the corrected mask pattern.
7. A mask process correction apparatus, comprising:
the receiving module is used for receiving the original mask pattern and the target simulation pattern;
The segmentation module is used for carrying out edge segment segmentation on the original mask pattern and converting the original mask pattern into a pattern surrounded by a plurality of edge segments;
The simulation module is used for performing simulation on the original mask pattern through a pre-trained correction intensive model to obtain mask process deviation values corresponding to the edge sections, wherein the correction intensive model is a model for calculating the mask process deviation values according to the overall deviation, the electron beam exposure deviation and the etching deviation;
the design deviation module is used for determining original design deviation values of the edge sections according to the original mask patterns and the target simulation patterns;
the process deviation module is used for determining edge placement errors corresponding to the edge sections according to the original design deviation value and the mask process deviation value;
The adjusting module is used for adjusting the positions of the corresponding edge sections according to the edge placement errors to obtain corrected mask patterns;
the simulation module further comprises:
The critical judging unit is used for judging whether the length of each edge section exceeds a preset critical length;
The one-dimensional determining unit is used for carrying out simulation on the edge section through a pre-trained one-dimensional correction intensive model when the length of the edge section exceeds the critical length, so as to obtain a corresponding mask process deviation value;
And the two-dimensional determining unit is used for carrying out simulation on the edge section through a pre-trained two-dimensional correction intensive model to obtain a corresponding mask process deviation value when the length of the edge section does not exceed the critical length.
8. A mask process correction apparatus, comprising:
A memory for storing a computer program;
A processor for implementing the steps of the mask process correction method according to any one of claims 1 to 6 when executing the computer program.
9. A computer readable storage medium, characterized in that the computer readable storage medium has stored thereon a computer program which, when executed by a processor, implements the steps of the mask process correction method according to any of claims 1 to 6.
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| CN116819898A (en) * | 2023-06-08 | 2023-09-29 | 中科晶源微电子技术（北京）有限公司 | Mask pattern correction method and device and semiconductor device |
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