CN118092069B - Mask process correction method, device, equipment and readable storage medium - Google Patents
Mask process correction method, device, equipment and readable storage medium Download PDFInfo
- Publication number
- CN118092069B CN118092069B CN202410480511.1A CN202410480511A CN118092069B CN 118092069 B CN118092069 B CN 118092069B CN 202410480511 A CN202410480511 A CN 202410480511A CN 118092069 B CN118092069 B CN 118092069B
- Authority
- CN
- China
- Prior art keywords
- mask
- electron beam
- mask pattern
- model
- beam energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
The application discloses a mask process correction method, a mask process correction device, mask process correction equipment and a readable storage medium, and belongs to the technical field of lithography. The application establishes the combined mask process correction model of multiple exposure dose processes in advance before correction, and when the simulation area contains patterns with different exposure doses, the final mask pattern can be obtained by one-time simulation through the combined mask process correction model. Before correcting target mask patterns with different exposure doses, defining different exposure areas according to the target mask patterns corresponding to the different exposure doses; in the correction process, the current mask pattern is split into different simulation layers according to the exposure area, so that the simulation calculation can be performed by using a combined mask process correction model to obtain edge placement errors of all patterns, and correction of patterns with different exposure doses can be performed simultaneously without step by step. Compared with the traditional mask process correction, the correction precision is greatly improved, and meanwhile, the running time is saved.
Description
Technical Field
The present application relates to the field of photolithography, and in particular, to a mask process correction method, apparatus, device, and computer readable storage medium.
Background
Mask process correction (Mask Process Correction, i.e., MPC) is to correct the electron beam exposure pattern so that the final mask pattern produced coincides with the target mask pattern when the mask is produced using the electron beam exposure and etching processes. Mask process correction is based on both rules and models, and for masks with high precision requirements, model-based mask process correction is used.
As the mask size is further reduced, multiple exposure dose (Multi-dose) processes are introduced in the mask fabrication, i.e., different exposure doses are used for different patterns in the e-beam exposure. For patterns of a general size, a conventional exposure dose is used, while for patterns of a small size, such as sub-resolution assist patterns, a higher dose is used to improve the manufacturing accuracy. In the process of multiple exposure doses, because the mask process correction models corresponding to different exposure dose patterns are different, the prior art can only be carried out step by step layer by step when carrying out mask process correction. The step correction cannot fully consider the interaction and dependence between patterns, so that when patterns with different exposure doses are very close to each other or even connected, the correction accuracy error is large. Therefore, how to improve the correction accuracy in the process of multiple exposure doses is a technical problem that the skilled person needs to solve at present.
Disclosure of Invention
The application aims to provide a mask process correction method, a device, equipment and a computer readable storage medium, which are used for simultaneously correcting patterns with different exposure doses by using a combined mask process correction model, so that the correction precision in various exposure dose processes is greatly improved; meanwhile, the correction is completed once, so that the running time of the program is saved.
In order to achieve the above object, the present application provides a mask process correction method, including:
defining different exposure areas according to the target mask patterns corresponding to different exposure doses;
Splitting the current mask pattern into different simulation layers according to the exposure area; all the simulation layers form a whole simulation area;
Performing simulation calculation on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern; the combined mask process correction model is a mask process correction model which is established in advance based on the total electron beam energy distribution model and the etching model of the simulation area; the total electron beam energy distribution model of the simulation area is obtained by superposing electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area;
and correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure pattern.
Optionally, the defining different exposure areas according to the target mask patterns corresponding to different exposure doses includes:
Splitting the target mask pattern into a plurality of parts corresponding to different exposure doses, wherein each part is represented by a target layer on the layout;
generating different exposure dose areas based on the patterns of different target layers; each exposure dose area is formed by outwards expanding a preset distance from the pattern of the target image layer corresponding to the exposure dose; when a plurality of exposure dose areas overlap after expansion, dividing the exposure dose area of the overlapping part into the exposure dose area of the highest exposure dose.
Optionally, the correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern, includes:
correcting the current mask pattern according to the edge placement error;
And when the preset condition is not met, circularly executing the step of splitting the current mask pattern into different simulation layers according to the exposure area until the step of correcting the current mask pattern according to the edge placement error is carried out until the preset condition is met, and taking the corrected mask pattern as the electron beam exposure mask pattern.
Optionally, the preset condition is that all the edge placement errors are smaller than a preset threshold value or reach a preset iteration number.
Optionally, before splitting the current mask pattern into different simulation layers according to the exposure area, the method further includes:
Performing edge segment segmentation based on the target mask pattern, and placing control points on each edge segment;
Correspondingly, the simulating calculation is carried out on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern, which comprises the following steps:
Simulating the simulation area by using the pre-established combined mask process correction model to obtain the final mask pattern; obtaining the edge placement errors of the control points on each edge section according to the deviation of the simulated final mask pattern and the simulated target mask pattern;
Correspondingly, the correcting the current mask pattern according to the edge placement error includes:
And according to the edge placement error, the edge section is moved to correct the current mask pattern.
Optionally, before defining different exposure areas according to the target mask patterns corresponding to different exposure doses, the method includes:
designing a modeling pattern set of a mask process correction model; the modeling pattern set includes a plurality of modeling patterns;
Performing mask manufacturing processes of a plurality of exposure doses based on the modeling pattern set to obtain the modeling patterns under different exposure doses;
collecting measurements of critical dimensions of the modeled pattern at different exposure doses using a scanning electron microscope;
establishing an electron beam energy distribution model;
Establishing the etching model;
Optimizing the electron beam energy distribution model and the etch model using measured values of the critical dimension of the modeling pattern at different exposure doses;
Based on the optimized electron beam energy distribution model, obtaining the electron beam energy distributed on the mask patterns corresponding to different exposure doses included in the simulation area, and linearly superposing the obtained electron beam energy of different exposure doses to obtain a total electron beam energy distribution model of the whole simulation area;
and establishing the combined mask process correction model by combining the total electron beam energy distribution model and the optimized etching model.
Optionally, the formula of the electron beam energy distribution model is:
；
Wherein EB (x, y) is the electron beam energy; d is the relative exposure dose, which is the exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m (x, y) is the mask pattern, including the modeling pattern; x is the abscissa of the mask pattern; y is the abscissa of the mask pattern; * Representing a convolution operation; b i is the corresponding linear coefficient;
The formula of the etching model is as follows:
；
wherein ET (x, y) is the etched image; d j is the j-th etching image item calculated based on the electron beam energy distribution image; c j is the linear coefficient corresponding to D j; t is the etching model threshold; EB (x, y) is the electron beam energy;
accordingly, the optimizing the electron beam energy distribution model and the etch model includes:
Optimizing parameters and linear coefficients of the electron beam energy distribution model and the etching model;
correspondingly, the formula of the total electron beam energy distribution model is as follows:
；
Where EB (x, y) is the total electron beam energy; d k represents the kth of the exposure dose relative to the nominal exposure dose; g i is the ith gaussian function; m k (x, y) is the mask pattern corresponding to the kth exposure dose; * Representing the convolution operation; b i is the corresponding linear coefficient.
In order to achieve the above object, the present application further provides a mask process correction device, including:
the exposure area definition module is used for defining different exposure areas according to the target mask patterns corresponding to different exposure doses;
The splitting simulation layer module is used for splitting the current mask pattern into different simulation layers according to the exposure area; all the simulation layers form a whole simulation area;
The simulation calculation module is used for performing simulation calculation on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern; the combined mask process correction model is a mask process correction model which is established in advance based on the total electron beam energy distribution model and the etching model of the simulation area; the total electron beam energy distribution model of the simulation area is obtained by superposing electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area;
and the correction module is used for correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern.
In order to achieve the above object, the present application further provides a mask process correction apparatus, comprising:
a memory for storing a computer program;
And a processor for implementing the steps of the mask process correction method as described above when executing the computer program.
To achieve the above object, the present application also provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the mask process correction method as described above.
Obviously, according to the mask process correction method provided by the application, the combined mask process correction model of various exposure dose processes is established in advance before correction, and when the simulation area contains patterns with different exposure doses, the final mask pattern can be obtained through one-time simulation by the combined mask process correction model. Before correcting target mask patterns with different exposure doses, defining different exposure areas according to the target mask patterns corresponding to the different exposure doses; in the correction process, the current mask pattern is split into different simulation layers according to the exposure area, so that the simulation calculation can be performed by using a combined mask process correction model to obtain edge placement errors of all patterns, and correction of patterns with different exposure doses can be performed simultaneously without step by step. Compared with the traditional mask process correction, the method can synchronously correct all target mask patterns, fully considers the mutual influence and dependence among different exposure dose patterns in the correction process, greatly improves the correction precision and saves the running time. The application also provides a mask process correction device, equipment and a computer readable storage medium, which have the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram of a target mask pattern that has not been corrected by a masking process;
FIG. 2 is an electron beam exposure pattern;
FIG. 3 is a final mask pattern obtained by fabrication;
FIG. 4 is a diagram of a target mask pattern used in a conventional mask process correction process;
FIG. 5 is a schematic diagram of edge segment segmentation and control point placement during conventional mask process correction;
FIG. 6 is a corrected electron beam exposure pattern during a conventional mask process correction;
FIG. 7 is a final mask pattern produced during conventional mask process correction;
FIG. 8 is a schematic diagram of a target mask pattern with different exposure dose patterns spaced farther apart;
FIG. 9 is a closely spaced target mask pattern for different exposure dose patterns;
FIG. 10 is a diagram of a target mask pattern associated with different exposure dose patterns;
FIG. 11 is a flowchart of a mask process correction method according to an embodiment of the present application;
FIG. 12 is a schematic flow chart of a mask process correction method according to an embodiment of the present application;
FIG. 13 is a schematic flow chart of a modeling method for a correction model of a joint mask process according to an embodiment of the present application;
FIG. 14 is a schematic diagram showing the resolution of target mask patterns corresponding to different exposure doses in a mask process correction process according to an embodiment of the present application;
FIG. 15 is a schematic view of a definition of a corresponding exposure dose region in a mask process correction process according to an embodiment of the present application;
FIG. 16 is a schematic diagram of edge segment segmentation and control point placement during mask process calibration according to an embodiment of the present application;
FIG. 17 is a schematic diagram showing the resolution of a current mask pattern corresponding to different exposure doses in a mask process correction process according to an embodiment of the present application;
Fig. 18 is a block diagram of a mask process correction device according to an embodiment of the present application.
The reference numerals are explained as follows:
11-a target mask pattern corresponding to the first exposure dose; 12-a target mask pattern corresponding to the second exposure dose; 21-a first exposure dose zone; 22-a second exposure dose zone; 31-a current mask pattern corresponding to the first exposure dose; 32-the current mask pattern corresponding to the second exposure dose.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Masks used in lithographic processes for large scale integrated circuit fabrication are typically created by electron beam exposure and etching processes. Due to effects such as electron beam scattering and etching deviation, there is a deviation between the final mask pattern obtained by the manufacturing and the target mask pattern. As shown in fig. 1 to 3, assuming that the electron beam exposure pattern (fig. 2) and the target mask pattern (fig. 1) that has not been corrected by the mask process are identical (i.e., without any correction), a deviation exists between the final mask pattern (fig. 3) obtained by the manufacturing and the target mask pattern. As the process node evolves, these deviations are beyond the acceptable range of photolithographic processes. Thus, mask process corrections were introduced in advanced photolithography process runs (28 nm and below). Mask process corrections are both rule-based and model-based. The mask process based on the rule has a higher correction running speed, but has limited accuracy. The mask process correction based on the model remarkably improves the precision, and is suitable for application with higher precision requirements.
In a model-based mask process correction procedure, a mask process correction model is first required to be established, and the model can predict a final mask pattern obtained after a mask manufacturing process for a given electron beam exposure pattern. Then, a mask correction program is established and the correction program is run on the target mask pattern. Fig. 4-7 are examples of model-based mask process corrections. Fig. 4 shows a target mask pattern. Edge segment segmentation is performed on the target mask pattern before correction, and control points are placed on the edge segments, as shown in fig. 5. And calculating edge placement errors (EDGE PLACEMENT Error, or EPE) of the control points according to the mask process correction model, and finally, moving the edge segments to correct based on the edge placement errors. The correction process needs to be completed through multiple iterations, and the corrected target mask pattern is shown in fig. 6. Based on the corrected mask pattern, the resulting post-fabrication final mask pattern is simulated as shown in fig. 7. It can be seen that after the mask process correction, the final mask pattern coincides with the target mask pattern. It should be noted that the mask process corrections described in fig. 4-7 are for a single exposure dose process, i.e., all patterns use the same exposure dose in an electron beam exposure.
As the mask size is further reduced, various exposure dose processes are introduced in mask fabrication, i.e., different exposure doses are used for different patterns in electron beam exposure. For patterns of a general size, the conventional exposure dose is still used, while for patterns of a very small size, such as sub-resolution assist patterns, a higher dose is used. As shown in fig. 8 to 10, an example of a target mask pattern for a multiple exposure dose process is provided, with different fill patterns representing different exposure doses. The resolution and the process window can be obviously improved by using high exposure dose for the pattern with small size, and the mask manufacturing precision is improved. At the same time, conventional exposure doses are still used for other patterns, and the accuracy can be improved without significantly increasing the electron beam exposure time (higher exposure doses mean more exposure time). In the process of multiple exposure doses, because the mask process correction models corresponding to different exposure dose patterns are different, the mask process correction needs to be performed step by step layer according to the prior art. Assume that the target mask pattern is divided into two parts: the first exposure dose layer and the second exposure dose layer correspond to two different exposure doses respectively. Then, all patterns of the first exposure dose layer are first corrected, and all patterns of the second exposure dose layer are fixed during this process. And fixing the corrected pattern of the first exposure dose layer, and correcting all patterns of the second exposure dose layer. And finally, superposing the patterns of the corrected first exposure dose layer and the corrected second exposure dose layer to obtain a complete corrected mask pattern.
For multiple exposure dose processes, the above-described method of layer-by-layer step correction does not adequately take into account the interplay and dependence between different exposure dose patterns. The above method is basically applicable when the patterns of different exposure doses are spaced far apart (as shown in fig. 8). However, when the patterns of different exposure doses are closely spaced (as shown in fig. 9) and even connected (as shown in fig. 10), the above method causes a large error. According to the flow of the stepwise correction layer by layer, the second exposure dose layer is fixed when the first exposure dose layer is corrected, namely, the pattern of the second exposure dose layer is assumed to be the original target pattern. However, when both corrections are completed, the pattern of the second exposure dose map layer has changed, which means that the result of the first correction is not accurate. The smaller the pitch of the different exposure dose patterns, the larger the error brought by the layer-by-layer stepwise correction method. If the third and fourth corrections are added to iterate to reduce the error, the run time will be greatly increased. Therefore, the application provides a mask process correction method, which uses a combined mask process correction model to correct patterns with different exposure doses simultaneously, thereby greatly improving correction precision in various exposure dose processes; meanwhile, the correction is completed once, so that the running time of the program is saved.
Referring to fig. 11, fig. 11 is a flowchart of a mask process correction method according to an embodiment of the present application, where the method may include:
s101: different exposure areas are defined according to the target mask patterns corresponding to different exposure doses.
The present embodiment is not limited to a specific manner of defining different exposure areas, and may include, but is not limited to, the following manners:
splitting a target mask pattern into a plurality of parts corresponding to different exposure doses, wherein each part is represented by a target layer on the layout;
Generating different exposure dose areas based on the patterns of the different target layers; each exposure dose area is formed by outwards expanding a preset distance from a pattern of a target layer corresponding to the exposure dose; when a plurality of exposure dose areas overlap after expansion, the exposure dose area of the overlapping portion is divided into exposure dose areas of the highest exposure dose.
The embodiment is not limited to a specific manner of splitting the target mask pattern, and may include, but is not limited to, defining the target mask pattern as a plurality of portions corresponding to different exposure doses according to the pattern size, for example, defining a pattern with a line width of less than 50nm as a target mask pattern corresponding to a high exposure dose, and defining the remaining patterns as target mask patterns corresponding to a normal exposure dose.
It should be noted that, in this embodiment, the extended preset distance is greater than the maximum distance that the edge segment is allowed to move during the mask correction.
In this embodiment, a joint mask process correction model is built in advance before step S101. The embodiment is not limited to a specific way of establishing the correction model of the joint mask process, and may include, but is not limited to, the following ways:
Designing a modeling pattern set of a mask process correction model; the modeling pattern set includes a plurality of modeling patterns;
performing mask manufacturing processes of multiple exposure doses based on modeling pattern sets to obtain modeling patterns under different exposure doses;
Collecting the measurement values of the key dimensions of the modeling patterns under different exposure doses by using a scanning electron microscope;
establishing an electron beam energy distribution model;
Establishing an etching model;
optimizing an electron beam energy distribution model and an etching model by using the measured values of the critical dimensions of the modeling pattern at different exposure doses;
Based on the optimized electron beam energy distribution model, obtaining electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area, and linearly superposing the obtained electron beam energy of different exposure doses to obtain a total electron beam energy distribution model of the whole simulation area;
And establishing a combined mask process correction model by combining the total electron beam energy distribution model and the optimized etching model.
The present embodiment is not limited to the kind of modeling pattern set, and may include, but is not limited to, one-dimensional graphics and two-dimensional graphics of different geometries and sizes.
The embodiment is not limited to the specific structure of the total electron beam energy distribution model, and the specific structure of the total electron beam energy distribution model may be determined according to the actual electron beam energy distribution model and the calculation accuracy of the actual requirements, for example:
the formula of the electron beam energy distribution model may be:
；
Where EB (x, y) is electron beam energy; d is the relative exposure dose, which is the exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m (x, y) is a mask pattern, including a modeling pattern; x is the abscissa of the mask pattern; y is the abscissa of the mask pattern; * Representing a convolution operation; b i is the corresponding linear coefficient;
the formula of the etching model may be:
；
Wherein ET (x, y) is the etched image; d j is the j-th etching image item calculated based on the electron beam energy distribution image; c j is the linear coefficient corresponding to D j; t is the etching model threshold; EB (x, y) is electron beam energy;
Accordingly, optimizing the electron beam energy distribution model and the etch model may include:
Optimizing parameters and linear coefficients of an electron beam energy distribution model and an etching model;
accordingly, the formula of the total electron beam energy distribution model may be:
；
Where EB (x, y) is the total electron beam energy; d k denotes the kth exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m k (x, y) is a mask pattern corresponding to the kth exposure dose; * Representing a convolution operation; b i is the corresponding linear coefficient.
S102: splitting the current mask pattern into different simulation layers according to the exposure area; all simulation layers constitute the whole simulation area.
Further, in order to improve the subsequent correction efficiency, the present embodiment may further include, before step S102:
edge segment segmentation is carried out based on the target mask pattern, and control points are placed on each edge segment;
correspondingly, in step 103, performing simulation calculation on the simulation area by using a pre-established joint mask process correction model to obtain an edge placement error of the simulated final mask pattern relative to the target mask pattern, which may include:
Simulating the simulation area by using a pre-established combined mask process correction model to obtain a final mask pattern; obtaining the edge placement error of the control point on each edge section according to the deviation of the simulated final mask pattern and the target mask pattern;
Accordingly, correcting the current mask pattern according to the edge placement error in step 104 includes:
And according to the edge placement error, the edge segment is moved to correct the current mask pattern.
S103: performing simulation calculation on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern; the combined mask process correction model is a mask process correction model which is established in advance based on a total electron beam energy distribution model and an etching model of a simulation area; the total electron beam energy distribution model of the simulation area is obtained by superposing electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area.
S104: and correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern.
In the present embodiment, the corrected mask pattern is used as an electron beam exposure mask pattern to be exposed, and a target mask pattern can be obtained.
Further, in order to improve the correction accuracy, step S104 in this embodiment may include:
correcting the current mask pattern according to the edge placement error;
and when the preset condition is not met, circularly executing the steps of splitting the current mask pattern into different simulation layers according to the exposure area, correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern until the preset condition is met.
The embodiment is not limited to a specific condition for stopping the iteration, and the preset condition may include, but is not limited to, that all edge placement errors are smaller than a preset threshold, or that a preset number of iterations is reached.
Based on the above embodiment, the present application establishes a combined mask process correction model of multiple exposure dose processes in advance before correction, and when the simulation area contains patterns with different exposure doses, the final mask pattern can be obtained by performing one-time simulation through the combined mask process correction model. Before correcting target mask patterns with different exposure doses, defining different exposure areas according to the target mask patterns corresponding to the different exposure doses; in the correction process, the current mask pattern is split into different simulation layers according to the exposure area, so that the simulation calculation can be performed by using a combined mask process correction model to obtain edge placement errors of all patterns, and correction of patterns with different exposure doses can be performed simultaneously without step by step. Compared with the traditional mask process correction, the method can synchronously correct all target mask patterns, fully considers the mutual influence and dependence among different exposure dose patterns in the correction process, greatly improves the correction precision and saves the running time.
Referring to fig. 12, fig. 12 is a schematic flow chart of a mask process correction method according to an embodiment of the present application, and the process specifically includes the following steps:
1. a combined mask process correction model of multiple exposure dose processes is established, and the specific flow is shown in FIG. 13.
1) First, a modeling pattern set of a mask process correction model is designed, wherein the modeling pattern set comprises one-dimensional patterns and two-dimensional patterns with different geometric shapes and sizes.
2) A plurality of exposure dose mask manufacturing processes are run based on the modeled pattern set in step 1). Assuming N exposure doses, N sets of modeling patterns will be obtained on the mask, each set corresponding to a different electron beam exposure dose.
3) Measurements of the critical dimensions (Critical Dimension, CD) of the modeled pattern at each exposure dose were collected using a scanning electron microscope.
4) Establishing an electron beam energy distribution model as shown in a formula (1):
（1）；
Where EB (x, y) is electron beam energy; d is the relative exposure dose, which is the exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m (x, y) is a mask pattern, including a modeling pattern; x is the abscissa of the mask pattern; y is the abscissa of the mask pattern; * Representing a convolution operation; b i is the corresponding linear coefficient; the electron beam energy distribution in this embodiment is expressed as a linear superposition of several gaussian functions and a convolution of the mask image.
5) An etching model is built as shown in a formula (2):
（2）；
Wherein ET (x, y) is the etched image; d j is the j-th etching image item calculated based on the electron beam energy distribution image; c j is the linear coefficient corresponding to D j; t is the etching model threshold; EB (x, y) is the electron beam energy.
6) And (3) combining the step (1) and the step (2) to obtain the complete mask process correction model. Optimizing parameters and linear coefficients of the model by using the measured values of the critical dimension at each exposure dose obtained in the step 3).
7) And establishing a combined mask process correction model of the multiple exposure dose processes. In this model, when there is a mask pattern M 1,M2,…,Mk corresponding to different exposure doses d 1,d2,…,dk in the simulation area, the electron beam energy of each exposure dose is calculated separately, and the total energy distribution of the whole area is obtained after linear superposition, as shown in formula (3). And (3) combining the formula (2) to obtain the etched image and the profile, namely the final mask pattern. Thus, the final mask pattern can be obtained by one-time simulation by using the combined mask process correction model formed by the formulas (3) and (2).
（3）；
Where EB (x, y) is the total electron beam energy; d k denotes the kth exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m k (x, y) is a mask pattern corresponding to the kth exposure dose; * Representing a convolution operation; b i is the corresponding linear coefficient.
2. The target mask pattern is split into a plurality of parts corresponding to different exposure doses, and each part is represented by one target layer on the layout, namely, each target layer corresponds to one exposure dose. As shown in fig. 14, the target mask pattern is defined as two parts according to whether the line width is less than 50 nm: a target mask pattern 11 corresponding to the first exposure dose and a target mask pattern 12 corresponding to the second exposure dose. Wherein the first exposure dose is a high exposure dose, and the second exposure dose is a conventional exposure dose.
3. Different exposure dose areas are generated based on the patterns of the different target layers. Each exposure dose region is obtained by expanding the target layer pattern corresponding to the exposure dose outwards by a preset distance (the preset distance is required to be larger than the maximum distance that the edge section is allowed to move when the mask is corrected, such as 30 nm). As shown in fig. 15, a first exposure dose region 21 (high exposure dose region) and a second exposure dose region 22 (normal exposure dose region) are generated, and the portion where the high exposure dose region and the normal exposure dose region overlap after expansion is defined as a high exposure dose region.
4. As shown in fig. 16, edge segment segmentation is performed based on the original target mask pattern before splitting, and control points are placed on each edge segment.
5. Splitting the current mask pattern into parts corresponding to different exposure doses, wherein each part is represented by a simulation layer on the layout, namely, each simulation layer corresponds to one exposure dose. Each simulated layer pattern is an overlapping portion of the corresponding exposure dose region and the current mask pattern. As shown in fig. 17, the present mask pattern 31 corresponding to the first exposure dose and the present mask pattern 32 corresponding to the second exposure dose are split. It should be noted that, before the correction is started, the current mask pattern is the target mask pattern, and the current mask pattern after the correction is the mask pattern after each correction.
6. And (3) according to the split current mask pattern obtained in step (5), simulating by using the combined mask process correction model described in formulas (3) and (2) to obtain a final mask pattern, and calculating the edge placement error of the control point on each edge section according to the deviation between the simulated final mask pattern and the target electron beam exposure mask pattern.
7. And (3) correcting the corresponding moving edge section according to the edge placement error obtained in the step (6). Mask patterns corresponding to different exposure doses participate in correction at the same time.
Repeating the steps 5 to 7 until all edge placement errors are smaller than a preset threshold or the preset iteration times are reached.
The mask process correction device, the device and the computer readable storage medium described below and the mask process correction method described above can be referred to correspondingly.
Referring to fig. 18, fig. 18 is a block diagram illustrating a mask process correction apparatus according to an embodiment of the present application, where the apparatus may include:
A define exposure area module 100, configured to define different exposure areas according to target mask patterns corresponding to different exposure doses;
A splitting simulation layer module 200, configured to split a current mask pattern into different simulation layers according to an exposure area; all the simulation layers form the whole simulation area;
The simulation calculation module 300 is configured to perform simulation calculation on the simulation area by using a pre-established joint mask process correction model, so as to obtain an edge placement error of the final mask pattern after simulation relative to the target mask pattern; the combined mask process correction model is a mask process correction model which is established in advance based on a total electron beam energy distribution model and an etching model of a simulation area; the total electron beam energy distribution model of the simulation area is obtained by superposing electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area;
the correction module 400 is configured to correct the current mask pattern according to the edge placement error, and take the corrected mask pattern as an electron beam exposure pattern.
Based on the above embodiment, the present application establishes a combined mask process correction model of multiple exposure dose processes in advance before correction, and when the simulation area contains patterns with different exposure doses, the final mask pattern can be obtained by performing one-time simulation through the combined mask process correction model. Before correcting target mask patterns with different exposure doses, defining different exposure areas according to the target mask patterns corresponding to the different exposure doses; in the correction process, the current mask pattern is split into different simulation layers according to the exposure area, so that the simulation calculation can be performed by using a combined mask process correction model to obtain edge placement errors of all patterns, and correction of patterns with different exposure doses can be performed simultaneously without step by step. Compared with the traditional mask process correction, the method can synchronously correct all target mask patterns, fully considers the mutual influence and dependence among different exposure dose patterns in the correction process, greatly improves the correction precision and saves the running time.
Based on the above embodiment, defining the exposure area module 100 may include:
splitting a target mask pattern unit, which is used for splitting the target mask pattern into a plurality of parts corresponding to different exposure doses, wherein each part is represented by a target layer on the layout;
Defining an exposure area unit for generating different exposure dose areas based on patterns of different target layers; each exposure dose area is formed by outwards expanding a preset distance from a pattern of a target layer corresponding to the exposure dose; when a plurality of exposure dose areas overlap after expansion, the exposure dose area of the overlapping portion is divided into exposure dose areas of the highest exposure dose.
Based on the above embodiments, the correction module 400 may include:
a correction unit for correcting the current mask pattern according to the edge placement error;
And the iteration unit is used for circularly executing the steps of splitting the current mask pattern into different simulation layers according to the exposure area when the preset condition is not met, correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern after the preset condition is met.
Based on the above embodiments, the iteration unit is specifically configured to preset the condition that all edge placement errors are smaller than a preset threshold, or reach a preset iteration number.
Based on the above embodiments, the mask process correction device may further include:
The edge segmentation module is used for carrying out edge segmentation based on the target mask pattern and placing control points on each edge segment;
Correspondingly, the simulation calculation module 300 is specifically configured to simulate the simulation area by using a pre-established joint mask process correction model to obtain a final mask pattern; obtaining the edge placement error of the control point on each edge section according to the deviation of the simulated final mask pattern and the target mask pattern;
accordingly, the correction module 400 is specifically configured to move the edge segment to correct the current mask pattern according to the edge placement error.
Based on the above embodiments, the mask process correction device may further include:
The modeling pattern set module is used for designing a modeling pattern set of a mask process correction model; the modeling pattern set includes a plurality of modeling patterns;
the mask manufacturing process module is used for operating mask manufacturing processes with various exposure doses based on the modeling pattern set to obtain modeling patterns under different exposure doses;
the key dimension acquisition module is used for collecting the measurement values of the key dimension of the modeling pattern under different exposure doses by using a scanning electron microscope;
The first modeling module is used for modeling the electron beam energy distribution model;
the second modeling module is used for modeling an etching model;
an optimizing model module for optimizing the electron beam energy distribution model and the etching model by using the measured values of the key dimensions of the modeling pattern under different exposure doses;
The third modeling module is used for obtaining the electron beam energy distributed on the mask patterns corresponding to different exposure doses included in the simulation area based on the optimized electron beam energy distribution model, and obtaining the total electron beam energy distribution model of the whole simulation area after linearly superposing the obtained electron beam energy of different exposure doses;
and a fourth modeling module for combining the total electron beam energy distribution model and the optimized etching model to build a combined mask process correction model.
Based on the above embodiments, the first modeling module specifically uses the following formula for the electron beam energy distribution model:
；
Where EB (x, y) is electron beam energy; d is the relative exposure dose, which is the exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m (x, y) is a mask pattern, including a modeling pattern; x is the abscissa of the mask pattern; y is the abscissa of the mask pattern; * Representing a convolution operation; b i is the corresponding linear coefficient;
The second modeling module is specifically configured to etch the model according to the formula:
；
Wherein ET (x, y) is the etched image; d j is the j-th etching image item calculated based on the electron beam energy distribution image; c j is the linear coefficient corresponding to D j; t is the etching model threshold; EB (x, y) is electron beam energy;
Correspondingly, the optimization model module is specifically used for optimizing parameters and linear coefficients of the electron beam energy distribution model and the etching model;
correspondingly, the third modeling module is specifically configured to perform the following formula of the total electron beam energy distribution model:
；
Where EB (x, y) is the total electron beam energy; d k denotes the kth exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m k (x, y) is a mask pattern corresponding to the kth exposure dose; * Representing a convolution operation; b i is the corresponding linear coefficient.
Based on the above embodiment, the present application further provides a mask process correction apparatus, including: a memory and a processor, wherein the memory is used for storing a computer program; and a processor for implementing the steps of the mask process correction method of each embodiment when executing the computer program. Of course, the mask process correction apparatus may also include various necessary network interfaces, power supplies, and other components, etc.
The application also provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program realizes the steps of the mask process correction method of each embodiment when being executed by a processor. The storage medium may include: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The principles and embodiments of the present application are described herein with reference to specific examples, where each example is a progressive relationship, and each example is mainly described by differences from other examples, and identical and similar parts of each example are mutually referred to. For the apparatus disclosed in the examples, reference is made to the corresponding method section. The above description of the embodiments is only for aiding in the understanding of the method of the present application and its core ideas. It will be apparent to those skilled in the art that various changes and modifications can be made to the present application without departing from the principles of the application, and such changes and modifications fall within the scope of the application.
It should also be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Claims (9)
1. A mask process correction method, comprising:
defining different exposure areas according to the target mask patterns corresponding to different exposure doses;
Splitting the current mask pattern into different simulation layers according to the exposure area; all the simulation layers form a whole simulation area;
Performing simulation calculation on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern; the combined mask process correction model is a mask process correction model which is established in advance based on the total electron beam energy distribution model and the etching model of the simulation area; the total electron beam energy distribution model of the simulation area is obtained by superposing electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area;
Correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern;
Before defining different exposure areas according to the target mask patterns corresponding to different exposure doses, the method comprises the following steps:
designing a modeling pattern set of a mask process correction model; the modeling pattern set includes a plurality of modeling patterns;
Performing mask manufacturing processes of a plurality of exposure doses based on the modeling pattern set to obtain the modeling patterns under different exposure doses;
collecting measurements of critical dimensions of the modeled pattern at different exposure doses using a scanning electron microscope;
establishing an electron beam energy distribution model;
Establishing the etching model;
Optimizing the electron beam energy distribution model and the etch model using measured values of the critical dimension of the modeling pattern at different exposure doses;
Based on the optimized electron beam energy distribution model, obtaining the electron beam energy distributed on the mask patterns corresponding to different exposure doses included in the simulation area, and linearly superposing the obtained electron beam energy of different exposure doses to obtain a total electron beam energy distribution model of the whole simulation area;
and establishing the combined mask process correction model by combining the total electron beam energy distribution model and the optimized etching model.
2. The mask process correction method according to claim 1, wherein the defining different exposure areas according to the target mask patterns corresponding to different exposure doses includes:
Splitting the target mask pattern into a plurality of parts corresponding to different exposure doses, wherein each part is represented by a target layer on the layout;
generating different exposure dose areas based on the patterns of different target layers; each exposure dose area is formed by outwards expanding a preset distance from the pattern of the target image layer corresponding to the exposure dose; when a plurality of exposure dose areas overlap after expansion, dividing the exposure dose area of the overlapping part into the exposure dose area of the highest exposure dose.
3. The mask process correction method according to claim 1, wherein the correcting the current mask pattern according to the edge placement error, using the corrected mask pattern as an electron beam exposure mask pattern, comprises:
correcting the current mask pattern according to the edge placement error;
And when the preset condition is not met, circularly executing the step of splitting the current mask pattern into different simulation layers according to the exposure area until the step of correcting the current mask pattern according to the edge placement error is carried out until the preset condition is met, and taking the corrected mask pattern as the electron beam exposure mask pattern.
4. A mask process correction method according to claim 3, wherein the preset condition is that all the edge placement errors are smaller than a preset threshold or a preset number of iterations is reached.
5. The mask process correction method according to claim 1, wherein before splitting the current mask pattern into different dummy patterns according to the exposure area, further comprising:
Performing edge segment segmentation based on the target mask pattern, and placing control points on each edge segment;
Correspondingly, the simulating calculation is carried out on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern, which comprises the following steps:
Simulating the simulation area by using the pre-established combined mask process correction model to obtain the final mask pattern; obtaining the edge placement errors of the control points on each edge section according to the deviation of the simulated final mask pattern and the simulated target mask pattern;
Correspondingly, the correcting the current mask pattern according to the edge placement error includes:
And according to the edge placement error, the edge section is moved to correct the current mask pattern.
6. The mask process correction method according to claim 1, wherein the electron beam energy distribution model has a formula:
；
Wherein EB (x, y) is the electron beam energy; d is the relative exposure dose, which is the exposure dose relative to the nominal exposure dose; g i is the ith Gaussian function; m (x, y) is the mask pattern, including the modeling pattern; x is the abscissa of the mask pattern; y is the abscissa of the mask pattern; * Representing a convolution operation; b i is the corresponding linear coefficient;
The formula of the etching model is as follows:
；
wherein ET (x, y) is the etched image; d j is the j-th etching image item calculated based on the electron beam energy distribution image; c j is the linear coefficient corresponding to D j; t is the etching model threshold; EB (x, y) is the electron beam energy;
accordingly, the optimizing the electron beam energy distribution model and the etch model includes:
Optimizing parameters and linear coefficients of the electron beam energy distribution model and the etching model;
correspondingly, the formula of the total electron beam energy distribution model is as follows:
；
Where EB (x, y) is the total electron beam energy; d k represents the kth of the exposure dose relative to the nominal exposure dose; g i is the ith gaussian function; m k (x, y) is the mask pattern corresponding to the kth exposure dose; * Representing the convolution operation; b i is the corresponding linear coefficient.
7. A mask process correction apparatus, comprising:
the exposure area definition module is used for defining different exposure areas according to the target mask patterns corresponding to different exposure doses;
The splitting simulation layer module is used for splitting the current mask pattern into different simulation layers according to the exposure area; all the simulation layers form a whole simulation area;
The simulation calculation module is used for performing simulation calculation on the simulation area by using a pre-established combined mask process correction model to obtain the edge placement error of the simulated final mask pattern relative to the target mask pattern; the combined mask process correction model is a mask process correction model which is established in advance based on the total electron beam energy distribution model and the etching model of the simulation area; the total electron beam energy distribution model of the simulation area is obtained by superposing electron beam energy distributed on mask patterns corresponding to different exposure doses included in the simulation area;
The correction module is used for correcting the current mask pattern according to the edge placement error, and taking the corrected mask pattern as an electron beam exposure mask pattern;
Further comprises:
the modeling pattern set module is used for designing a modeling pattern set of a mask process correction model; the modeling pattern set includes a plurality of modeling patterns;
A mask manufacturing process module is operated, and is used for operating mask manufacturing processes of a plurality of exposure doses based on the modeling pattern set to obtain the modeling patterns under different exposure doses;
A critical dimension acquisition module for collecting the measured values of the critical dimension of the modeling pattern under different exposure doses by using a scanning electron microscope;
The first modeling module is used for modeling the electron beam energy distribution model;
A second build model module for building the etch model;
An optimization model module for optimizing the electron beam energy distribution model and the etch model using measured values of the critical dimension of the modeling pattern at different exposure doses;
A third modeling module, configured to obtain, based on the optimized electron beam energy distribution model, the electron beam energy distributed on the mask pattern corresponding to different exposure doses included in the simulation area, and linearly superimpose the obtained electron beam energy of different exposure doses, thereby obtaining a total electron beam energy distribution model of the entire simulation area;
And a fourth modeling module, configured to combine the total electron beam energy distribution model and the optimized etching model, and build the joint mask process correction model.
8. A mask process correction apparatus, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the mask process correction method according to any one of claims 1 to 6 when executing the computer program.
9. A computer-readable storage medium, characterized by: the computer readable storage medium has stored thereon a computer program which, when executed by a processor, implements the steps of the mask process correction method according to any of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410480511.1A CN118092069B (en) | 2024-04-22 | 2024-04-22 | Mask process correction method, device, equipment and readable storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410480511.1A CN118092069B (en) | 2024-04-22 | 2024-04-22 | Mask process correction method, device, equipment and readable storage medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118092069A CN118092069A (en) | 2024-05-28 |
| CN118092069B true CN118092069B (en) | 2024-07-23 |
Family
ID=91144167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410480511.1A Active CN118092069B (en) | 2024-04-22 | 2024-04-22 | Mask process correction method, device, equipment and readable storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118092069B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001022166A1 (en) * | 1999-09-21 | 2001-03-29 | Infineon Technologies Ag | Waiting time dependent correction for lithographic mask exposure |
| CN101957555A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Mask picture modification method, mask manufacturing method and optical proximity correction method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0625727A1 (en) * | 1993-05-19 | 1994-11-23 | Agfa-Gevaert N.V. | Improved tone rendition of halftone images by projection exposure |
| JP3043329B1 (en) * | 1998-12-28 | 2000-05-22 | 株式会社東芝 | Charged particle beam exposure system |
| JP3287333B2 (en) * | 1999-04-28 | 2002-06-04 | 日本電気株式会社 | Electron beam exposure mask, method of manufacturing the same, and method of manufacturing a semiconductor device |
| JP4226729B2 (en) * | 1999-06-30 | 2009-02-18 | 株式会社東芝 | Mask pattern correction method |
| JP3360725B2 (en) * | 1999-10-19 | 2002-12-24 | 日本電気株式会社 | Electron beam exposure method, mask and electron beam exposure apparatus used for the same |
| JP2005157043A (en) * | 2003-11-27 | 2005-06-16 | Toshiba Corp | Method for verifying result of mask pattern correction, and apparatus for verifying result of mask pattern correction |
| JP4593236B2 (en) * | 2004-10-29 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | Dimensional measurement scanning electron microscope system, circuit pattern shape evaluation system and method |
| US20060183025A1 (en) * | 2005-02-14 | 2006-08-17 | Micron Technology, Inc. | Methods of forming mask patterns, methods of correcting feature dimension variation, microlithography methods, recording medium and electron beam exposure system |
| KR102247563B1 (en) * | 2014-06-12 | 2021-05-03 | 삼성전자 주식회사 | Exposure method using E-beam, and method for fabricating mask and semiconductor device using the exposure method |
| JP2019068000A (en) * | 2017-10-04 | 2019-04-25 | 株式会社ニューフレアテクノロジー | Simulation apparatus, charged particle beam drawing system, and charged particle beam drawing method |
| CN112230507B (en) * | 2020-10-22 | 2024-06-28 | 泉芯集成电路制造(济南)有限公司 | Optical proximity correction model construction method, device and computer equipment |
| CN116931383A (en) * | 2023-06-21 | 2023-10-24 | 中科晶源微电子技术（北京）有限公司 | Method and device for determining exposure dose of electron beam |
| CN117192889A (en) * | 2023-08-31 | 2023-12-08 | 中国科学院光电技术研究所 | Optical proximity effect correction method related to process window in super-resolution lithography |
| CN117434785B (en) * | 2023-12-21 | 2024-03-01 | 华芯程(杭州)科技有限公司 | Mask pattern correction method and device, electronic equipment and readable storage medium |
-
2024
- 2024-04-22 CN CN202410480511.1A patent/CN118092069B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001022166A1 (en) * | 1999-09-21 | 2001-03-29 | Infineon Technologies Ag | Waiting time dependent correction for lithographic mask exposure |
| CN101957555A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Mask picture modification method, mask manufacturing method and optical proximity correction method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118092069A (en) | 2024-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7350183B2 (en) | Method for improving optical proximity correction | |
| JP3409493B2 (en) | Mask pattern correction method and correction device | |
| US6470489B1 (en) | Design rule checking system and method | |
| JP3805936B2 (en) | Mask pattern correction method and mask pattern creation system | |
| EP1023641A1 (en) | Design rule checking system and method | |
| JPH11102062A (en) | Formation of mask data and its forming apparatus, mask data correcting means and mask data correcting apparatus computer readable recording medium | |
| US11415897B2 (en) | Calibrating stochastic signals in compact modeling | |
| US6993455B2 (en) | Method for determining the construction of a mask for the micropatterning of semiconductor substrates by means of photolithography | |
| CN115509081B (en) | Optical proximity correction method, mask and readable storage medium | |
| JP4068531B2 (en) | Pattern dimension correction method and verification method using OPC, mask creation method and semiconductor device manufacturing method, and system and program for executing the correction method | |
| US6892365B2 (en) | Method for performing monte-carlo simulations to predict overlay failures in integrated circuit designs | |
| CN109559979A (en) | Method for manufacturing integrated circuit | |
| CN118092069B (en) | Mask process correction method, device, equipment and readable storage medium | |
| CN108776421B (en) | Manufacturing method of test mask | |
| JP4592240B2 (en) | Mask pattern creating method and semiconductor device manufacturing method | |
| CN117434785B (en) | Mask pattern correction method and device, electronic equipment and readable storage medium | |
| JP2004163472A (en) | Method for designing photomask, photomask, and semiconductor device | |
| JP3286225B2 (en) | Pattern design method | |
| CN114556210A (en) | Use of mask manufacturing models in correcting lithographic masks | |
| JP7190267B2 (en) | Calibration of Basic Small Patterns in Variable Shaped Beam Electron Beam Lithography | |
| JP2003344985A (en) | Layout pattern data correction system | |
| CN112445059B (en) | Optical proximity correction, photomask production and patterning method | |
| JP3853731B2 (en) | Photomask pattern correction method and photomask corrected thereby | |
| TW202129396A (en) | Using mask fabrication models in correction of lithographic masks | |
| Oberschmidt et al. | Automation of sample plan creation for process model calibration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |