CN119487617A - Substrate processing device, substrate processing method and substrate processing program - Google Patents
Substrate processing device, substrate processing method and substrate processing program Download PDFInfo
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- CN119487617A CN119487617A CN202380051299.0A CN202380051299A CN119487617A CN 119487617 A CN119487617 A CN 119487617A CN 202380051299 A CN202380051299 A CN 202380051299A CN 119487617 A CN119487617 A CN 119487617A
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- 239000000758 substrate Substances 0.000 title claims abstract description 246
- 238000012545 processing Methods 0.000 title claims abstract description 95
- 238000003672 processing method Methods 0.000 title claims description 11
- 239000007788 liquid Substances 0.000 claims abstract description 472
- 239000007789 gas Substances 0.000 claims abstract description 279
- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 238000011010 flushing procedure Methods 0.000 claims abstract description 51
- 239000011261 inert gas Substances 0.000 claims abstract description 41
- 238000007599 discharging Methods 0.000 claims description 12
- 239000013256 coordination polymer Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 22
- 238000000576 coating method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 15
- 238000011161 development Methods 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 230000005865 ionizing radiation Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
一种基片处理装置，其用于对基片进行处理，所述基片处理装置包括：保持旋转部，其能够保持所述基片并使所述基片旋转；供给部，其包括至少一个气体喷嘴和至少一个冲洗喷嘴，所述至少一个气体喷嘴能够对被供给了显影液后的基片供给不活泼气体，所述至少一个冲洗喷嘴能够在设置在比气体喷嘴的气体供给位置靠外周侧的吐出位置对基片供给冲洗液；和控制部，所述控制部，通过一边持续地从气体喷嘴吐出不活泼气体、一边使来自冲洗喷嘴的冲洗液的吐出位置从基片的中心向外周方向移动，使由不活泼气体和冲洗液形成的气液界面从中心向外周方向移动，并且，在冲洗喷嘴从基片的中心侧向外周侧移动时，将从冲洗喷嘴吐出的冲洗液的方向从沿着基片的旋转方向的方向切换为沿着基片的径向的方向。
A substrate processing device for processing a substrate, the substrate processing device comprising: a holding and rotating portion capable of holding the substrate and rotating the substrate; a supply portion comprising at least one gas nozzle and at least one flushing nozzle, the at least one gas nozzle capable of supplying an inert gas to the substrate after being supplied with a developer, and the at least one flushing nozzle capable of supplying a flushing liquid to the substrate at a discharge position arranged on the outer peripheral side of the gas supply position of the gas nozzle; and a control portion, the control portion continuously discharges inert gas from the gas nozzle while moving the discharge position of the flushing liquid from the flushing nozzle from the center to the periphery of the substrate, thereby moving a gas-liquid interface formed by the inert gas and the flushing liquid from the center to the periphery, and when the flushing nozzle moves from the center to the periphery of the substrate, switching the direction of the flushing liquid discharged from the flushing nozzle from the direction along the rotation direction of the substrate to the radial direction of the substrate.
Description
Technical Field
The invention relates to a substrate processing apparatus, a substrate processing method, and a substrate processing program.
Background
Patent document 1 discloses a structure in which, when cleaning is performed while discharging a cleaning liquid and nitrogen gas onto the surface of a substrate, a nozzle is moved so that a difference between a distance from a discharge position of the cleaning liquid nozzle to a center portion of the substrate and a distance from the discharge position of the gas nozzle to the center portion of the substrate becomes small.
Prior art literature
Patent literature
Patent document 1 Japanese patent application laid-open No. 2015-008273
Disclosure of Invention
Technical problem to be solved by the invention
The present invention provides a technique capable of reducing residues on the surface of a substrate after the substrate is cleaned.
Technical scheme for solving technical problems
A substrate processing apparatus according to an aspect of the present invention is a substrate processing apparatus for processing a substrate, the substrate processing apparatus including a holding/rotating unit configured to hold the substrate and rotate the substrate, a supply unit including at least one gas nozzle configured to supply inert gas to the substrate to which a developer is supplied, and at least one rinse nozzle configured to supply rinse liquid to the substrate at a discharge position provided on an outer peripheral side than a gas supply position of the gas nozzle, and a control unit configured to switch the discharge position of the rinse liquid from the rinse nozzle from the gas nozzle to a radial direction of the substrate in a direction of rotation of the substrate by continuously moving the discharge position of the rinse liquid from the rinse nozzle from the center to the outer peripheral direction of the substrate, when the rinse nozzle moves in the outer peripheral direction, that is, when the rinse nozzle moves from the center to the outer peripheral side, the rinse liquid is moved from the center side of the rinse nozzle.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, a technique capable of reducing residues on the surface of a substrate after the substrate is cleaned can be provided.
Drawings
FIG. 1 is a schematic diagram showing an example of a substrate processing system.
Fig. 2 is a schematic diagram showing an example of the coating and developing apparatus.
Fig. 3 is a schematic diagram showing an example of the developing unit.
Fig. 4 (a) to 4 (c) are schematic diagrams showing an example of the arrangement of the gas nozzle and the rinse nozzle of the developing unit.
Fig. 5 is a block diagram showing an example of a hardware configuration of the control device.
Fig. 6 is a flowchart showing an example of a substrate processing step.
Fig. 7 is a flowchart showing an example of the rinse solution removal step.
Fig. 8 (a) to 8 (d) are schematic views showing an example of the step of removing the rinse solution.
Fig. 9 is a flowchart showing an example of the rinse solution removal step.
Fig. 10 (a) to 10 (d) are schematic views showing an example of a rinse solution removal step.
FIG. 11 is a flowchart showing an example of the rinse solution removal step.
Fig. 12 (a) to 12 (d) are schematic views showing an example of a rinse solution removal step.
Detailed Description
Various exemplary embodiments are described below.
A substrate processing apparatus according to an aspect of the present invention is a substrate processing apparatus for processing a substrate, the substrate processing apparatus including a holding/rotating unit configured to hold the substrate and rotate the substrate, a supply unit including at least one gas nozzle configured to supply inert gas to the substrate to which a developer is supplied, and at least one rinse nozzle configured to supply rinse liquid to the substrate at a discharge position provided on an outer peripheral side from a gas supply position of the gas nozzle, and a control unit configured to switch a direction of discharge of the rinse liquid from the rinse nozzle to a radial direction of the substrate along a direction of rotation of the substrate by continuously discharging the inert gas from the gas nozzle while moving a discharge position of the rinse liquid from the rinse nozzle in the outer peripheral direction from a center of the substrate, and moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center to the outer peripheral direction, when the rinse nozzle is moved from the center side to the outer peripheral side.
In the above-described substrate processing apparatus, the gas-liquid interface formed by the inert gas and the rinse liquid can be moved from the center to the outer circumferential direction by moving the discharge position of the rinse liquid from the rinse nozzle from the center to the outer circumferential direction while continuously discharging the inert gas from the gas nozzle to the substrate to which the developer is supplied. In this case, when the rinse nozzle moves from the center side to the outer peripheral side of the substrate, the direction of the rinse liquid discharged from the rinse nozzle can be switched from the direction along the rotation direction of the substrate to the direction along the radial direction of the substrate. When forming the gas-liquid interface on the center side of the substrate, the discharge direction of the rinse liquid from the rinse nozzle is set to be along the rotation direction of the substrate, whereby the generation of residue after removal of the rinse liquid can be suppressed. On the other hand, on the outer peripheral side of the substrate, the discharge direction of the rinse liquid from the rinse nozzle is set to be along the radial direction of the substrate, whereby the generation of residues after removal of the rinse liquid can be suppressed. Therefore, when the gas-liquid interface is moved in the peripheral direction, the residue on the surface of the substrate after the substrate is cleaned can be reduced by switching the discharge direction of the rinse liquid as described above.
The supply unit may have a first arm provided with a first rinse nozzle and a first gas nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle, wherein the direction of the rinse liquid discharged from the first rinse nozzle is along the direction of the rotation direction of the substrate, and the direction of the rinse liquid discharged from the second rinse nozzle is along the direction of the radial direction of the substrate, and the control unit may switch from a first state, in which the first arm is moved at a position closer to the center of the substrate than a predetermined switching position, to a second state, in which the inert gas and the rinse liquid are supplied while the first arm is moved, thereby forming the gas-liquid interface, and the second state, in which the inert gas and the rinse liquid are supplied while the second arm is moved at a position closer to the outer peripheral side of the substrate than the switching position, thereby forming the gas-liquid interface.
With the above configuration, the inert gas and the rinse liquid are supplied to the first arm in which the discharge direction of the rinse liquid from the first rinse nozzle is along the rotation direction of the substrate, so that the gas-liquid interface is formed on the center side of the substrate, and the generation of the residue after the rinse liquid is removed can be suppressed. On the other hand, on the outer peripheral side of the substrate, the inert gas and the rinse liquid are supplied to the second arm in which the discharge direction of the rinse liquid from the second rinse nozzle is along the radial direction of the substrate, thereby forming a gas-liquid interface, and the generation of residues after the rinse liquid removal can be suppressed. Therefore, by adopting the above structure, residues on the surface of the substrate after the substrate is cleaned can be reduced.
In this case, the control unit may stop the discharge of the rinse liquid from the first rinse nozzle in the second state, and increase the discharge amount of the rinse liquid from the second rinse nozzle in comparison with the first state.
With the above configuration, in the first state, the rinse liquid is discharged from the second rinse nozzle, and the rinse liquid can be promoted to move in the peripheral direction from the vicinity of the center of the substrate. On the other hand, in the second state, since the discharge of the rinse liquid from the first rinse nozzle is stopped, the movement of the rinse liquid in the peripheral direction can be promoted by increasing the discharge amount of the rinse liquid discharged from the second rinse nozzle.
In this case, the control unit may stop the discharge of the gas from the first gas nozzle in the second state.
By adopting the above structure, the flow of the gas on the surface of the substrate in the second state is stabilized, and the disturbance of the gas-liquid interface can be prevented.
The distance between the discharge position of the rinse liquid from the first rinse nozzle and the discharge position of the gas from the first gas nozzle on the first arm may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the second gas nozzle on the second arm.
When a gas-liquid interface is formed on the substrate, the residue can be suppressed when the discharge position of the rinse liquid on the center side of the substrate is close to the discharge position of the gas, and the residue can be suppressed when the discharge position of the rinse liquid on the outer Zhou Cechong of the substrate is distant from the discharge position of the gas. As described above, the nozzles are arranged in the first arm so that the discharge positions are close to each other (close to each other), and the nozzles are arranged in the second arm so that the discharge positions are distant from each other, whereby the residue after cleaning can be further reduced.
The gas nozzle, the first rinse nozzle, and the second rinse nozzle of the supply unit may be provided on an arm that is movable independently of each other, the direction of the rinse liquid discharged from the first rinse nozzle may be a direction along the rotation direction of the substrate, the direction of the rinse liquid discharged from the second rinse nozzle may be a direction along the radial direction of the substrate, and the control unit may be configured to switch from a first state in which the rinse liquid is supplied from the second rinse nozzle to form the gas-liquid interface at a position on the center side of the substrate than the predetermined switching position to a second state in which the rinse liquid is supplied from the second rinse nozzle to form the gas-liquid interface, and to move the gas nozzle in the outer circumferential direction in accordance with the movement of the rinse nozzle in the outer circumferential direction in the first state and the second state.
With the above configuration, the rinse liquid is supplied from the first rinse nozzle having the discharge direction of the rinse liquid along the rotation direction of the substrate on the center side of the substrate to form the gas-liquid interface, whereby the generation of residues after removal of the rinse liquid can be suppressed. On the other hand, on the outer peripheral side of the substrate, the rinse liquid is supplied from the second rinse nozzle in which the discharge direction of the rinse liquid is along the radial direction of the substrate to form a gas-liquid interface, whereby the generation of residues after removal of the rinse liquid can be suppressed. Therefore, by adopting the above structure, residues on the surface of the substrate after the substrate is cleaned can be reduced.
In this case, the control unit may stop the discharge of the rinse liquid from the first rinse nozzle in the second state, and increase the discharge amount of the rinse liquid from the second rinse nozzle as compared with the first state.
With the above configuration, in the first state, the rinse liquid is discharged from the second rinse nozzle, and the rinse liquid can be promoted to move in the peripheral direction from the vicinity of the center of the substrate. On the other hand, in the second state, since the discharge of the rinse liquid from the first rinse nozzle is stopped, the movement of the rinse liquid in the peripheral direction can be promoted by increasing the discharge amount of the rinse liquid discharged from the second rinse nozzle.
The distance between the discharge position of the rinse liquid from the first rinse nozzle and the discharge position of the gas from the gas nozzle in the first state may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the gas nozzle in the second state.
When a gas-liquid interface is formed on the substrate, the residue can be suppressed when the discharge position of the rinse liquid is close to the discharge position of the gas on the center side of the substrate, and the residue can be suppressed when the discharge position of the rinse liquid is distant from the discharge position of the gas on the outer peripheral side of the substrate. As described above, in the first state, the nozzles are arranged so that the discharge positions of the gas liquid and the rinse liquid are close to each other, and in the second state, the nozzles are arranged so that the discharge positions are distant from each other, whereby the residue after cleaning can be further reduced.
The supply unit may have a first gas nozzle whose discharge position is fixed at the center of the substrate, a first arm provided with a first rinse nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle, wherein the direction of the rinse liquid discharged from the first rinse nozzle is along the direction of the rotation direction of the substrate, and the direction of the rinse liquid discharged from the second rinse nozzle is along the direction of the radial direction of the substrate, and the control unit may be configured to switch from a first state, in which the inert gas is supplied from the first gas nozzle at a position closer to the center of the substrate than a predetermined switching position, to a second state, in which the inert gas is supplied from the first rinse nozzle while the first arm is moved, thereby forming the gas-liquid interface, and the second state, in which the inert gas is supplied from the first rinse nozzle while the second arm is moved at a position closer to the outer peripheral side than the switching position, thereby forming the gas-liquid interface.
With the above configuration, the rinse liquid is supplied from the first rinse nozzle having the discharge direction of the rinse liquid along the rotation direction of the substrate on the center side of the substrate, and the gas-liquid interface is formed with the first gas nozzle having the discharge position fixed to the center of the substrate, whereby the generation of the residue after the removal of the rinse liquid can be suppressed. On the other hand, on the outer peripheral side of the substrate, the inert gas and the rinse liquid are supplied from the second arm in which the discharge direction of the rinse liquid from the second rinse nozzle is the direction along the radial direction of the substrate, and a gas-liquid interface is formed, whereby the generation of residues after the rinse liquid removal can be suppressed. Therefore, by adopting the above structure, residues on the surface of the substrate after the substrate is cleaned can be reduced.
In this case, the control unit may stop the discharge of the rinse liquid from the first rinse nozzle in the second state, and increase the discharge amount of the rinse liquid from the second rinse nozzle as compared with the first state.
With the above configuration, in the first state, the rinse liquid is discharged from the second rinse nozzle, and the rinse liquid can be promoted to move in the peripheral direction from the vicinity of the center of the substrate. On the other hand, in the second state, since the discharge of the rinse liquid from the first rinse nozzle is stopped, the movement of the rinse liquid in the peripheral direction can be promoted by increasing the discharge amount of the rinse liquid discharged from the second rinse nozzle.
The distance between the discharge position of the rinse liquid from the first rinse nozzle and the discharge position of the gas from the gas nozzle in the first state may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the second gas nozzle in the second state.
When a gas-liquid interface is formed on the substrate, the residue can be suppressed when the discharge position of the rinse liquid on the center side of the substrate is close to the discharge position of the gas, and the residue can be suppressed when the discharge position of the rinse liquid on the outer Zhou Cechong of the substrate is distant from the discharge position of the gas. As described above, in the first state, the nozzles are arranged so that the discharge positions of the gas liquid and the rinse liquid are close to each other, and in the second state, the nozzles are arranged so that the discharge positions are distant from each other, whereby the residue after cleaning can be further reduced.
The supply unit may include a first gas nozzle having a discharge position fixed to a center of the substrate, and a first arm provided with a first rinse nozzle capable of changing a direction of the discharged rinse liquid, and the control unit may gradually change a direction of the rinse liquid discharged from the first rinse nozzle from a direction along a rotation direction of the substrate to a direction along a radial direction of the substrate when the first rinse nozzle moves in the outer circumferential direction.
With the above configuration, the rinse liquid is supplied to the center side of the substrate in the direction along the rotation direction of the substrate so that the discharge direction of the rinse liquid from the rinse nozzle is set to the direction along the rotation direction of the substrate, thereby forming a gas-liquid interface, and the generation of residues after the removal of the rinse liquid can be suppressed. On the other hand, on the outer peripheral side of the substrate, the rinse liquid is supplied in a direction along the radial direction of the substrate so that the rinse liquid is discharged from the rinse nozzle, and a gas-liquid interface is formed, whereby the generation of residues after the removal of the rinse liquid can be suppressed. Therefore, by adopting the above structure, residues on the surface of the substrate after the substrate is cleaned can be reduced.
A substrate processing method according to one embodiment of the present invention is a method for processing a substrate, comprising a step of holding the substrate in a holding rotation section and rotating the substrate, and a moving step of continuously moving a discharge position of a rinse liquid from a rinse nozzle from a center of the substrate to an outer circumferential direction while continuously discharging an inert gas from the gas nozzle to the substrate after being supplied with a developer, thereby moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center to the outer circumferential direction, wherein the rinse nozzle supplies the rinse liquid to the substrate at the discharge position provided on the outer circumferential side of the gas supply position of the gas nozzle, and in the moving step, the direction of the rinse liquid discharged from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate when the rinse nozzle is moved from the center side to the outer circumferential side of the substrate.
In the above-described substrate processing method, when the rinse nozzle is moved from the center side to the outer peripheral side of the substrate, the direction of the rinse liquid discharged from the rinse nozzle is switched from the direction along the rotation direction of the substrate to the direction along the radial direction of the substrate. When the gas-liquid interface is formed on the center side of the substrate, the discharge direction of the rinse liquid from the rinse nozzle is along the rotation direction of the substrate, whereby the generation of residue after removal of the rinse liquid can be suppressed. On the other hand, on the outer peripheral side of the substrate, the discharge direction of the rinse liquid from the rinse nozzle is along the radial direction of the substrate, whereby the generation of residues after removal of the rinse liquid can be suppressed. Therefore, when the gas-liquid interface is moved in the peripheral direction, the residue on the surface of the substrate after the substrate is cleaned can be reduced by switching the discharge direction of the rinse liquid as described above.
A substrate processing program according to an embodiment of the present invention is a substrate processing program for causing a computer to execute a substrate processing, the substrate processing program causing the computer to execute a step of holding the substrate in a holding rotation section and rotating the substrate, and a moving step of moving a gas-liquid interface formed by the inert gas and the rinse liquid from a center to an outer circumferential direction of the substrate while continuously discharging inert gas from a gas nozzle to the substrate to which a developer is supplied, wherein the rinse nozzle supplies the rinse liquid to the substrate at a discharge position provided on an outer circumferential side than a gas supply position of the gas nozzle, and in the moving step, the direction of the rinse liquid discharged from the rinse nozzle is switched from a direction along a rotation direction of the substrate to a direction along a radial direction of the substrate while continuously moving the rinse nozzle from the center to the outer circumferential side of the substrate.
According to the above substrate processing program, the residue on the surface of the substrate after the substrate is cleaned can be reduced in the same manner as in the substrate processing method.
[ Exemplary embodiment ]
Various exemplary embodiments are described in detail below with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals.
[ Substrate processing System ]
The substrate processing system 1 (substrate processing apparatus) shown in fig. 1 is a system that performs formation of a photosensitive film on a workpiece W, exposure of the photosensitive film, and development of the photosensitive film. The workpiece W to be processed is, for example, a substrate, or a substrate in a state where a film, a circuit, or the like is formed by performing a predetermined process. As an example, the substrate is a silicon wafer. The workpiece W (substrate) may be circular. The work W may be a glass substrate, a mask substrate, or an FPD (FLAT PANEL DISPLAY: flat panel display), or the like. The photosensitive coating film is, for example, a resist film.
As shown in fig. 1 and 2, the substrate processing system 1 includes a coating and developing apparatus 2, an exposure apparatus 3, and a control apparatus 100. The exposure device 3 is a device for exposing a resist film (photosensitive film) formed on a workpiece W (substrate). Specifically, the exposure device 3 irradiates the exposure target portion of the resist film with energy rays by a method such as immersion exposure. The energy rays are, for example, ionizing radiation or non-ionizing radiation. Ionizing radiation is radiation having energy sufficient to ionize atoms or molecules. The ionizing radiation may be extreme ultraviolet (EUV: extreme Ultraviolet), electron beam, ion beam, X-ray, alpha ray, beta ray, gamma ray, heavy particle ray, proton ray, or the like. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. The non-ionizing radiation may be g-rays, i-rays, krF excimer laser, arF excimer laser, F2 excimer laser, or the like.
The coating and developing apparatus 2 performs a process of forming a resist film by coating a resist (chemical solution) on the surface of the workpiece W before the exposure process is performed by the exposure apparatus 3. The coating and developing apparatus 2 develops the resist film formed on the workpiece W after the exposure process.
The coating and developing apparatus 2 includes a carrier block 4, a process block 5, and an interface block 6.
The carrier block 4 guides the work W into the coating and developing apparatus 2 and guides the work W out of the coating and developing apparatus 2. The carrier block 4 includes, for example, a plurality of carriers C for supporting the work W, and a conveyor A1 including a transfer arm. The carrier C accommodates a plurality of (multiple) round workpieces W, for example. The conveyor A1 takes out the workpiece W from the carrier C and delivers it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it to the carrier C. The processing block 5 has processing modules 11, 12, 13, 14.
The processing module 11 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyor A3 for conveying the workpiece W to these units. The processing module 11 forms a lower layer film on the surface of the workpiece W using the liquid processing unit U1 and the heat processing unit U2. The liquid treatment unit U1 applies a treatment liquid for forming a lower layer film to the work W. The heat treatment unit U2 performs various heat treatments accompanying formation of the underlying film.
The processing module 12 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyor A3 that conveys the workpiece W to these units. The processing module 12 forms a resist film on the underlying film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming a resist film on the underlying film. The liquid processing unit U1 applies a chemical liquid capable of forming a pattern by exposure to energy rays (for example, i-rays) as a processing liquid for forming a resist film on the underlying film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the resist film.
The processing module 13 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyor A3 that conveys the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming an upper layer film on the resist film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper layer film.
The process module 14 houses a developing unit U3, a heat treatment unit U4, a measuring unit U5, and a conveying device A3 for conveying the workpiece W to these units. The processing module 14 performs development of the resist film subjected to the exposure processing and heat treatment accompanied with the development by the developing unit U3 and the heat treatment unit U4. The developing unit U3 is a unit that performs liquid treatment using a developing liquid on the workpiece W. The developing unit U3 supplies a developing solution to the surface of the workpiece W after exposure, thereby forming a liquid film (paddle ) of the developing solution on the surface of the workpiece W. The developing unit U3 develops the resist film by maintaining a liquid film of the developer (for example, stationary development) on the surface of the workpiece W. After development with the developer, the developing unit U3 washes the developer on the surface of the workpiece W with the rinse solution, and removes the rinse solution remaining on the surface of the workpiece W.
The heat treatment unit U4 performs various heat treatments accompanied with development. Specific examples of the heat treatment include a heat treatment before development (PEB: post Exposure Bake) and a heat treatment after development (PB: post Bake).
A shelving unit U10 is provided in the processing block 5 at a position on the carrier block 4 side. The shelving unit U10 is divided into a plurality of cells arranged in the up-down direction. A conveyor A7 including a lifting arm is provided in the vicinity of the shelving unit U10. The conveyor A7 lifts and lowers the work W between the cells of the shelving unit U10. A shelf unit U11 is provided in the processing block 5 at a position on the interface block 6 side. The shelving unit U11 is divided into a plurality of cells arranged in the up-down direction.
The interface block 6 transfers the workpiece W to and from the exposure device 3. The interface block 6 is, for example, built-in with a transfer device A8 including a transfer arm, and is connected to the exposure device 3. The carrying device A8 delivers the workpiece W arranged in the shelving unit U11 to the exposure device 3. The conveyor A8 receives the workpiece W from the exposure device 3 and returns it to the shelving unit U11.
The control device 100 (control section) is configured to be capable of controlling the coating and developing device 2 partially and entirely. The control device 100 controls, for example, the coating and developing device 2 to execute coating and developing processes in the following order. First, the control device 100 controls the conveyor A1 to convey the work W in the carrier C to the shelving unit U10, and controls the conveyor A7 to dispose the work W in the chamber for the process module 11.
Next, the control device 100 controls the conveying device A3 to convey the work W of the shelving unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 11. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form a lower layer film on the surface of the workpiece W. Thereafter, the control device 100 controls the conveyor A3 to return the workpiece W on which the lower film is formed to the shelving unit U10, and controls the conveyor A7 to dispose the workpiece W in the chamber for the process module 12.
Next, the control device 100 controls the conveying device A3 to convey the work W of the shelving unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 12. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form a resist film on the surface of the workpiece W. Thereafter, the control device 100 controls the conveyor A3 to return the workpiece W to the shelving unit U10, and controls the conveyor A7 to dispose the workpiece W in the chamber for the processing module 13.
Next, the control device 100 controls the conveying device A3 to convey the work W of the shelving unit U10 to each unit within the processing module 13. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form an upper layer film on the resist film of the workpiece W. Thereafter, the control device 100 controls the conveying device A3 to convey the work W to the shelving unit U11.
Next, the control device 100 controls the conveyor A8 to send out the work W of the shelving unit U11 to the exposure device 3. Thereafter, the control device 100 controls the conveyor A8 to receive the workpiece W subjected to the exposure process using the energy rays (for example, i-rays) from the exposure device 3, and dispose the workpiece W in the chamber for the process module 14 in the shelving unit U11.
Next, the control device 100 controls the conveying device A3 to convey the work W of the shelving unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to perform development of the resist film of the work W. By developing the resist film, a resist pattern can be formed on the surface of the workpiece W.
Thereafter, the control device 100 controls the conveyor A3 to return the workpiece W to the shelving unit U10, and controls the conveyor A7 and the conveyor A1 to return the workpiece W to the carrier C. In the above manner, the coating and developing process for one workpiece W is completed. The control device 100 causes the coating and developing apparatus 2 to perform the coating and developing process on each of the plurality of subsequent works W in the same manner as described above.
Input/output devices may be connected to the control device 100. The input-output device is a device for inputting input information representing an instruction from a user such as an operator to the control apparatus 100, and outputting information from the control apparatus 100 to the user. The input-output device may include a keyboard, an operation panel, or a mouse as an input device, and may include a monitor (e.g., a liquid crystal display) as an output device.
The specific structure of the substrate processing apparatus is not limited to the structure of the substrate processing system 1 exemplified above. The substrate processing apparatus may be any apparatus as long as it includes a developing unit that develops a substrate in a state where a resist film is formed and a control device that can control the developing unit.
(Developing Unit)
The developing unit U3 of the process module 14 will be described in detail with reference to fig. 3 and 4. For example, as shown in fig. 3, the developing unit U3 has a housing H, a holding and rotating portion 20, a developer supply portion 30, a rinse liquid supply portion 40 (supply portion), a gas supply portion 50 (supply portion), a cover member 70, and a blower B. The housing H houses and holds the rotating portion 20, the developer supply portion 30, the rinse liquid supply portion 40, the gas supply portion 50, the cover member 70, and the blower B.
The holding and rotating portion 20 (holding portion) holds and rotates the workpiece W. The holding and rotating unit 20 can hold the workpiece W while not rotating the workpiece W. The holding rotation portion 20 includes, for example, a rotation driving portion 22, a shaft 24, and a holding portion 26. The rotation driving unit 22 operates based on an operation instruction from the control device 100 to rotate the shaft 24. The rotation driving unit 22 includes a power source such as an electric motor, for example.
The holding portion 26 is provided at the front end portion of the shaft 24. The work W is disposed on the holding portion 26. The holding portion 26 holds the workpiece W substantially horizontally by suction, for example. The holding rotation portion 20 rotates the workpiece W about an axis (rotation axis) perpendicular to the surface Wa of the workpiece W in a state where the posture of the workpiece W is substantially horizontal. The holding portion 26 may hold the workpiece W so that the rotation axis substantially coincides with the center CP (see fig. 4 (a)) of the workpiece W.
The developer supply portion 30 supplies the developer L1 to the surface Wa of the workpiece W held by the holding rotation portion 20 (holding portion 26). The developer L1 is a chemical solution for developing a resist film (hereinafter referred to as "resist film R") formed on the surface Wa of the workpiece W. In the present invention, supplying a fluid (for example, the developer L1) such as a liquid or a gas to the surface Wa of the workpiece W corresponds to bringing the fluid into contact with a film such as the resist film R or the liquid film formed on the surface Wa.
The developer supply portion 30 includes, for example, a liquid feeding portion 32, a driving portion 34, and a developing nozzle 36. The liquid feeding portion 32 feeds the developer L1 stored in a container (not shown) to the developing nozzle 36 by a pump or the like (not shown) based on an operation instruction from the control device 100. The driving section 34 moves the developing nozzle 36 at least in a direction (horizontal direction) along the surface Wa of the workpiece W based on an operation instruction from the control device 100. The developing nozzle 36 is supported by an arm or the like, not shown. The drive section 34 moves the arm to move the developing nozzle 36.
The developing nozzle 36 discharges (i.e., releases) the developing solution L1 supplied from the solution feed portion 32 toward the surface Wa of the workpiece W. When the developer L1 is discharged from the developing nozzle 36 toward the center of the workpiece W in a state where the workpiece W is rotating, the developer L1 is supplied to spread on the surface Wa of the workpiece W by centrifugal force so as to cover the entire surface Wa of the workpiece W. The developing nozzle 36 may be configured to discharge the developer L1 while moving from the center to the outer periphery of the workpiece W, for example.
The rinse liquid supply unit 40 supplies the rinse liquid L2 to the peripheral edge region of the surface Wa of the workpiece W held by the holding/rotating unit 20 (holding unit 26). As the rinse liquid L2, water (e.g., pure water) can be used. The rinse liquid supply unit 40 includes a first rinse liquid supply unit 40A and a second rinse liquid supply unit 40B.
The first rinse liquid supply unit 40A includes, for example, a liquid feed unit 42A, a driving unit 44A, and a rinse nozzle 46A. The liquid feeding unit 42A feeds the rinse liquid L2 stored in a container (not shown) to the rinse nozzle 46A by a pump or the like (not shown) based on an operation instruction from the control device 100. The driving unit 44A moves the flushing nozzle 46A based on an operation instruction from the control device 100. The flushing nozzle 46A is supported by, for example, an arm 47A shown in fig. 4. The driving unit 44A may move the rinse nozzle 46A by moving the arm 47A.
The rinse nozzle 46A is disposed above the surface Wa of the workpiece W. As shown in fig. 4 (a), the rinse nozzle 46A of the first rinse liquid supply section 40A extends in a direction along the rotation direction a of the workpiece W in a plan view. As shown in fig. 4 (c), the rinse nozzle 46A (the extension direction of the rinse nozzle 46A) is inclined with respect to the surface Wa of the workpiece W in side view. The inclination angle of the rinse nozzle 46A with respect to the surface Wa is, for example, about 30 ° to 60 °, and the inclination angle is, for example, 45 °. As a result, the rinse liquid L2 is discharged obliquely downward from the rinse nozzle 46A. The rinse nozzle 46A is disposed so that the discharged rinse liquid L2 is directed along the rotation direction a on the surface Wa of the workpiece W. That is, the position of the rinse nozzle 46A is adjusted so that the discharge direction of the rinse liquid L2 is orthogonal to a straight line connecting the discharge position P1 and the center CP of the workpiece W at the discharge position P1, which is a contact point between the rinse liquid L2 discharged from the rinse nozzle 46A and the surface Wa of the workpiece W.
The driving unit 44A may move the rinse nozzle 46A in the extending direction of a straight line connecting the discharge position P1 and the center CP of the workpiece W. At this time, the driving unit 44A may move the rinse nozzle 46A so that the discharge position P1 moves on a straight line extending from the center CP of the workpiece W.
The second rinse liquid supply unit 40B includes, for example, a liquid feed unit 42B, a driving unit 44B, and a rinse nozzle 46B. The liquid feeding unit 42B feeds the rinse liquid L2 stored in a container (not shown) to the rinse nozzle 46B by a pump or the like (not shown) based on an operation instruction from the control device 100. The driving unit 44B moves the flushing nozzle 46B based on an operation instruction from the control device 100. The rinse nozzle 46B is supported by an arm 47B shown in fig. 4. The driving unit 44B may move the flushing nozzle 46B by moving the arm 47B.
The rinse nozzle 46B is disposed above the surface Wa of the workpiece W. As shown in fig. 4 (a), the rinse nozzle 46B of the second rinse liquid supply unit 40B extends in a direction along the radial direction of the workpiece W in a plan view, and the discharge port is directed to the outside of the workpiece W. As shown in fig. 4B, the rinse nozzle 46B (the extension direction of the rinse nozzle 46B) is inclined with respect to the surface Wa of the workpiece W in side view. The inclination angle of the rinse nozzle 46B with respect to the surface Wa is, for example, about 30 ° to 60 °, and the inclination angle is, for example, 45 °. As a result, the rinse liquid L2 is discharged obliquely downward from the rinse nozzle 46B. The rinse nozzle 46B is disposed so that the discharged rinse liquid L2 is in the radial direction of the workpiece W on the surface Wa of the workpiece W. That is, the position of the rinse nozzle 46B is adjusted so that, at the discharge position P2 which is the contact point between the rinse liquid L2 discharged from the rinse nozzle 46B and the surface Wa of the workpiece W, the discharge direction of the rinse liquid L2 extends along a straight line connecting the discharge position P2 and the center CP of the workpiece W and is directed outward of the workpiece W.
The driving unit 44B may move the rinse nozzle 46B in the radial direction, which is the extending direction of the straight line connecting the discharge position P2 and the center CP of the workpiece W. At this time, the driving unit 44B may move the rinse nozzle 46B so that the discharge position P2 moves on a straight line extending from the center CP of the workpiece W, and also move the rinse nozzle 46B itself on a straight line connecting the discharge position P2 and the center CP of the workpiece W.
The gas supply unit 50 supplies a predetermined gas to the surface Wa of the workpiece W. The gas supplied from the gas supply unit 50 (hereinafter referred to as "gas G") may be an inert gas, and in one example, nitrogen gas. The gas G is used to remove the rinse liquid L2 from the surface Wa of the workpiece W. After the developer L1 present on the workpiece W is rinsed away by the rinse liquid L2, the gas G is supplied to the center CP of the workpiece W, whereby an area where the surface Wa of the workpiece W is exposed is formed at the center of the surface Wa of the workpiece W. A circumferential gas-liquid interface is formed around the exposed region of the surface Wa. The gas-liquid interface corresponds to the boundary between the region where the rinse liquid L2 remains and the region where the surface Wa is exposed. By continuing to supply the gas G while rotating the workpiece W, the gas-liquid interface moves to the outer peripheral side, that is, the exposed area of the surface Wa becomes large. By enlarging the area where the surface Wa is exposed, the rinse liquid L2 can be finally removed from the surface Wa. Thus, the gas G is used to remove the rinse liquid L2 from the surface Wa of the workpiece W.
The gas supply portion 50 includes, for example, a gas delivery portion 52 and a gas nozzle 56. The gas delivery unit 52 delivers the gas G stored in the container (not shown) to the gas nozzle 56 by a pump or the like (not shown). The gas nozzle 56 may be disposed above the workpiece W, and may eject gas so as to spread in a plurality of directions (radially) as it is away from the gas nozzle 56. The gas nozzle 56 may be formed with a plurality of discharge ports extending at different angles with respect to the surface Wa of the workpiece W, for example. The gas nozzle 56 may also be supported by an arm 57 as shown in fig. 4. At this time, the driving unit 54 may move the gas nozzle 56 by moving the arm 57. The gas nozzle 56 may be configured to be movable radially outward from the center CP of the workpiece W, for example.
In addition, the gas nozzle 56 may be connected (fixed) to the flushing nozzle 46A or the flushing nozzle 46B. In this case, the driving part 44A or the driving part 44B moves not only the flushing nozzle along the surface Wa but also the gas nozzle 56 together along the surface Wa.
The cover member 70 is provided around the holding rotation portion 20. The cover member 70 includes, for example, a cup body 72, a drain 74, and a vent 76. The cup main body 72 functions (acts) as a liquid collecting container that receives the developer L1 and the rinse liquid L2 supplied to the workpiece W for liquid treatment of the workpiece W. The drain 74 is provided at the bottom of the cup main body 72, and discharges the drain (waste liquid) collected by the cup main body 72 to the outside of the developing unit U3. An exhaust port 76 is provided at the bottom of the cup body 72.
The developing unit U3 has exhaust portions V1, V2. The exhaust unit V1 is provided at the lower portion of the housing H, and operates based on an operation instruction from the control device 100, thereby exhausting the gas in the housing H. The exhaust unit V1 may be, for example, a damper capable of adjusting the amount of exhaust according to the opening degree. By adjusting the amount of exhaust gas from the housing H by the exhaust portion V1, the temperature, pressure, humidity, and the like in the housing H can be controlled. The exhaust unit V1 may be controlled to always exhaust the interior of the housing H during the liquid treatment of the workpiece W.
The exhaust portion V2 is provided in the exhaust port 76, and operates based on an operation instruction from the control device 100, thereby exhausting the gas in the cup main body 72. The down flow (down flow) flowing around the workpiece W is discharged to the outside of the casing H of the developing unit U3 through the air outlet 76 and the air outlet portion V2. The exhaust unit V2 may be, for example, a damper capable of adjusting the amount of exhaust according to the opening degree. By adjusting the amount of exhaust gas from the cup main body 72 by the exhaust portion V2, the temperature, pressure, humidity, and the like in the cup main body 72 can be controlled.
The blower B is disposed above the holding rotary 20 and the cover member 70 in the housing H of the developing unit U3. The blower B forms a downward flow to the hood member 70 based on an operation instruction from the control device 100. The blower B may be controlled to always form a downward flow during the liquid treatment of the workpiece W.
(Control device)
As shown in fig. 2, the control device 100 has a memory unit 102 and a control unit 104 as functional configurations. The storage unit 102 stores a program for operating each part of the coating and developing apparatus 2 including the developing unit U3. The storage unit 102 also stores various data (for example, information on a signal for operating the developing unit U3) and information from sensors or the like provided in the respective units. The storage section 102 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an opto-magnetic recording disk. The program may be contained in an external storage device provided separately from the storage unit 102 or in an intangible medium such as a propagated signal. The program may be installed from these other media to the storage unit 102, and the storage unit 102 may store the program.
The control section 104 controls the operations of the respective sections of the coating and developing apparatus 2 based on the program read from the storage section 102. The control unit 104 is configured to perform at least an operation of holding the workpiece W by the holding/rotating unit 20 and rotating the workpiece W, and an operation of moving a discharge position of the rinse solution from the rinse nozzle that supplies the rinse solution to the workpiece W from the center of the workpiece W to the outer circumferential direction while continuously discharging the inert gas from the gas nozzle to the workpiece W after the supply of the developer, thereby moving a gas-liquid interface formed by the inert gas and the rinse solution from the center to the outer circumferential direction, wherein the discharge position of the rinse solution is located on the outer circumferential side than the gas supply position of the gas nozzle.
The control device 100 is constituted by one or more control computers. For example, the control device 100 has a circuit 150 shown in fig. 5. The circuit 150 has one or more processors 152, memory 154, storage 156, input-output ports 158, and a timer 162. The storage device 156 has a storage medium readable by a computer, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method described later. The storage medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, or an optical disk. The memory 154 temporarily stores programs downloaded from a storage medium of the storage device 156 and the operation result of the processor 152.
The processor 152 cooperates with the memory 154 to execute the programs described above. The input/output port 158 inputs/outputs electric signals to/from the holding/rotating unit 20, the developer supply unit 30, the rinse liquid supply unit 40 (the first rinse liquid supply unit 40A and the second rinse liquid supply unit 40B), the exhaust units V1, V2, the blower B, and the like in accordance with instructions from the processor 152. The timer 162 measures the elapsed time by counting, for example, reference pulses of a certain period. The hardware configuration of the control device 100 may be constituted by a dedicated logic Circuit or an ASIC (Application SPECIFIC INTEGRATED Circuit) integrated with the dedicated logic Circuit.
[ Substrate processing method ]
Next, a series of processes performed by the control apparatus 100 will be described as an example of a substrate processing method with reference to fig. 6 to 8. Fig. 6 is a flowchart illustrating an outline of the liquid treatment performed on the work W.
First, the control device 100 controls the respective parts of the coating and developing apparatus 2, and processes the workpiece W in the processing modules 11 to 13, thereby forming a resist film R on the surface Wa of the workpiece W (step S01). Next, the control device 100 controls the respective parts of the coating and developing device 2, and conveys the workpiece W from the process module 13 to the exposure device 3 by the conveying device A7 or the like. Next, another control device, which is different from the control device 100, controls the exposure device 3 so that the exposure device 3 exposes the resist film R formed on the surface Wa of the workpiece W in a predetermined pattern (step S02).
Next, the control device 100 controls the respective parts of the coating and developing device 2 to convey the workpiece W from the exposure device 3 to the developing unit U3 of the process module 14. Thereby, the workpiece W is held by the holding rotation portion 20 with the surface Wa facing upward. Next, the control device 100 controls the developer supply portion 30 of the developing unit U3 to supply the developer L1 to the surface Wa of the workpiece W, that is, the upper surface of the resist film R (step S03).
In step S03, the control device 100 may control the developer supply portion 30 to supply the developer L1 from the developing nozzle 36 to the surface Wa of the workpiece W while horizontally moving the developing nozzle 36 above the non-rotating workpiece W. Alternatively, the control device 100 may control the holding/rotating unit 20 and the developer supply unit 30 to rotate the workpiece W by the holding/rotating unit 20, and to horizontally move the developing nozzle 36 above the workpiece W, thereby supplying the developer L1 from the developing nozzle 36 to the surface Wa of the workpiece W. In this case, the developer L1 is supplied spirally from the center to the periphery of the workpiece W or from the periphery to the center of the workpiece W. In step S03, the developer L1 is retained so as to cover the entire upper surface of the resist film R on the surface Wa of the workpiece W.
Next, the control device 100 controls the holding rotation section 20 and the rinse liquid supply section 40 (the first rinse liquid supply section 40A and the second rinse liquid supply section 40B), and supplies the rinse liquid L2 to the upper surface of the developing liquid L1, which is the surface Wa of the workpiece W being rotated, by the rinse liquid supply section 40 (step S04). In step S04, the control device 100 may move the rinse nozzle 46A of the first rinse liquid supply unit 40A so that the discharge position P1 at which the rinse nozzle 46A discharges the rinse liquid L2 substantially coincides with the center CP of the workpiece W. In this state, the rinse liquid L2 is supplied from the rinse nozzle 46A while rotating the workpiece W, whereby the rinse liquid L2 spreads over the entire surface Wa of the workpiece W. The control device 100 may be configured to supply the rinse liquid L2 from the rinse nozzle 46A toward the surface Wa of the workpiece W while rotating the workpiece W by the holding/rotating unit 20 and moving the rinse nozzle 46A horizontally above the workpiece W. In step S04, the control device 100 may supply the rinse liquid L2 from both the rinse nozzle 46A of the first rinse liquid supply unit 40A and the rinse nozzle 46B of the second rinse liquid supply unit 40B.
Next, the control device 100 supplies the gas G from the gas nozzle 56 to the surface Wa of the rotating workpiece W, that is, to the upper surface of the rinse liquid L2 remaining on the surface Wa by the gas supply unit 50, and removes the rinse liquid L2 (step S05). At the discharge start time point when the discharge of the gas G is started in step S05, the control device 100 may move the gas nozzle 56 by the driving unit 54 so that the arrival position of the gas G2 substantially coincides with the center CP of the workpiece W.
In step S05, the gas G is supplied from the gas nozzle 56, and the rinse liquid L2 is continuously supplied from step S04. That is, the rinse liquid L2 is removed from the surface Wa of the workpiece W while the gas G and the rinse liquid L2 are simultaneously supplied.
(Flow of removal of rinse liquid L2)
The flow of removing the rinse liquid L2 in step S05 will be described with reference to fig. 7 and 8.
First, as shown in fig. 7, the control device 100 starts (ON) the supply of the gas G (nitrogen gas) from the gas nozzle 56 of the gas supply unit 50. At the same time, the control device 100 starts (ON) supplying the rinse liquid L2 from the rinse nozzle 46A of the first rinse liquid supply portion 40A in the rotation direction of the workpiece W, and supplying the rinse liquid L2 from the rinse nozzle 46B of the second rinse liquid supply portion 40B in the direction toward the outer periphery of the workpiece W (step S11). At this time, as shown in fig. 8 (a), the gas nozzle 56 is arranged to discharge the gas G at the center CP of the workpiece W. The rinse nozzle 46A, which extends in the rotation direction and discharges the rinse liquid L2 in the rotation direction, is disposed such that the discharge position P1 is located at a distance r1 from the center CP in the radial direction of the workpiece W. The rinse nozzle 46B that extends in the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer circumferential direction in the radial direction is disposed such that the discharge position P2 is located at a distance r2 from the center CP in the radial direction of the workpiece W. By starting the discharge of the gas G in this state, as shown in fig. 8 (a), the rinse liquid L2 is gradually removed from the center, and the dry core region D in which the surface Wa of the workpiece W is exposed is formed. In addition, a gas-liquid interface D0 is formed at the boundary between the region where the rinse liquid L2 remains and the dry core region D. The rinse nozzle 46A is disposed further inside than the rinse nozzle 46B. That is, r1< r 2. When the diameter of the workpiece W is 200mm, the distance r1 can be set to, for example, 10 to 25mm, and the distance r2 can be set to 20 to 50mm. Fig. 8 (a) schematically shows a state where the distance r1 is set to 15mm and the distance r2 is set to 30 mm.
In this state, the control device 100 adjusts the discharge amount so that the discharge amount of the rinse liquid L2 from the rinse nozzle 46B (discharge amount per unit time) is smaller than the discharge amount of the rinse liquid L2 from the rinse nozzle 46A (discharge amount per unit time). As an example, the discharge amount of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml/min, and the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml/min. By using such a relationship between the discharge amounts, the flow of the rinse liquid L2 in the spiral direction formed by the rinse liquid L2 discharged in the rotation direction from the rinse nozzle 46A becomes the main flow in the region separated from the center CP of the workpiece W by the distances r1 to r 2. In addition, in the region on the outer peripheral side of the distance r2, the rinse liquid L2 discharged in the outer peripheral direction from the rinse nozzle 46B is applied, whereby a flow of the rinse liquid L2 further outward is formed.
Next, the control device 100 moves the gas nozzle 56 and the rinse nozzle 46A in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S12). Fig. 8 (b) shows a state in which the gas nozzle 56 and the rinse nozzle 46A are moved 15mm in the outer circumferential direction of the workpiece W. By moving the rinse nozzle 46A in the outer circumferential direction, the region to which the rinse liquid L2 is supplied is moved in the outer circumferential direction. By moving the gas nozzle 56, the region to which the gas G is supplied also moves in the outer circumferential direction. As a result, the boundary between the rinse liquid L2 and the dry core region D, that is, the gas-liquid interface D0, formed on the center side of the workpiece W gradually moves to the outer peripheral side. That is, as shown in fig. 8 (b), the dry core region D gradually expands from the center CP toward the outer periphery side. Further, since the flushing nozzle 46B does not move at this stage, in the state shown in fig. 8 (B), both the flushing nozzle 46A and the flushing nozzle 46B, which are moved 15mm in the outer circumferential direction, are located at positions spaced apart from the center CP by 30 mm. That is, the flushing nozzle 46A is moved to the same outer peripheral position as the flushing nozzle 46B.
Next, the control device 100 stops (OFF) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S13). Fig. 8 (c) schematically shows a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A is stopped. At this stage, the control device 100 may increase the discharge amount of the rinse liquid L2 from the rinse nozzle 46B to the same level as the discharge amount from the rinse nozzle 46A (for example, 350 ml/min). Accordingly, in the region on the outer peripheral side of the position separated from the center CP by the distance r2, the rinse liquid L2 discharged in the outer peripheral direction from the rinse nozzle 46B forms a flow of the rinse liquid L2 going to the outer periphery.
Next, the control device 100 moves the rinse nozzle 46B in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S14). In the state shown in fig. 8 (c), the gas nozzle 56 is moved 15mm in the outer circumferential direction from the center CP of the workpiece W. On the other hand, the discharge position P2 of the rinse nozzle 46B is set to be apart from the center CP of the workpiece W by 30mm (distance r 2) in the outer circumferential direction. Then, the control device 100 moves only the rinse nozzle 46B until the difference between the distance between the discharge position of the gas G and the center CP of the workpiece W and the distance between the discharge position P2 of the rinse liquid L2 and the center CP of the workpiece W becomes 30mm. Here, by moving the flushing nozzle 46B only by 15mm in the outer circumferential direction, the distance between the discharge position P2 of the flushing nozzle 46B and the discharge position of the gas G becomes 30mm. Thus, the difference between the distances from the center CP between the discharge position P2 of the rinse nozzle 46B on the outer peripheral side of the workpiece W and the discharge position of the gas G is larger than the relationship between the discharge position P1 of the rinse nozzle 46A on the center side of the workpiece W and the discharge position of the gas G.
Next, the control device 100 moves the gas nozzle 56 and the rinse nozzle 46B in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S15). Fig. 8 (d) shows a state in which the gas nozzle 56 and the rinse nozzle 46B are moved in the outer circumferential direction of the workpiece W, as compared with the state shown in fig. 8 (c). From the state of step S14, the gas nozzle 56 and the rinse nozzle 46B are moved in the outer circumferential direction of the workpiece W while maintaining the distance from the center CP between the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G on the workpiece W. At this time, by moving the rinse nozzle 46B in the outer circumferential direction, the region to which the rinse liquid L2 is supplied is moved in the outer circumferential direction. By moving the gas nozzle 56, the region to which the gas G is supplied also moves in the outer circumferential direction. As a result, the gas-liquid interface D0 of the workpiece W moves further toward the outer periphery side. That is, as shown in fig. 8 (D), the dry core region D further spreads to the outer peripheral side, and the region where the rinse liquid L2 remains is only the outer peripheral edge. From this state, when the control device 100 further moves the gas nozzle 56 and the rinse nozzle 46B in the outer circumferential direction, the entire rinse liquid L2 can be removed from the surface Wa of the workpiece W by the gas G together with the dissolved substance of the resist dissolved by the reaction with the developer L1. As a result, the entire surface Wa of the work W becomes the dry core region D, and a resist pattern formed by development appears.
In the above-described flow (step), as shown in fig. 8 (b) and step S12, the gas nozzle 56 and the flushing nozzle 46A are moved simultaneously. Thus, the gas nozzle 56 and the flushing nozzle 46A may be configured to be integrally movable. In this case, in step S14, when the gas nozzle 56 is moved in the outer circumferential direction, the control device 100 may move the rinse nozzle 46A, in which the supply of the rinse liquid L2 is stopped, in the outer circumferential direction together with the gas nozzle 56.
In the above-described flow (step), in step S14, only the flushing nozzle 46B is moved. This process is a process in which the difference between the distances from the center CP between the discharge positions P2 of the rinse nozzles 46B on the outer peripheral side of the workpiece W and the discharge positions of the gas G of the gas nozzles 56 is larger than the relationship between the rinse nozzles 46A on the center side of the workpiece W and the gas nozzles 56. On the outer peripheral side, the discharge position P2 of the rinse liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W are separated to a certain extent (the difference between the distance between the discharge position of the gas G and the center CP of the workpiece W and the distance between the discharge position P2 of the rinse liquid L2 and the center CP of the workpiece W is increased), and the possibility that the rinse liquid L2 is splashed by the gas G discharged from the gas nozzle 56 and is scattered (splashed) toward the dry core area D can be reduced. Therefore, as in step S14 described above, by increasing the distance between the discharge position P2 of the rinse liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W on the outer peripheral side as compared with the center side of the workpiece W, the residue after the treatment can be prevented from remaining on the surface Wa of the workpiece W.
On the other hand, when the distance between the discharge position of the rinse liquid L2 and the discharge position of the gas G in the radial direction of the workpiece W is increased on the center side of the workpiece W, interference fringes derived from the rinse liquid L2 and residues may be generated on the surface Wa of the workpiece W. Further, it was confirmed that when the rinse liquid L2 is discharged in the outer circumferential direction as in the rinse nozzle 46B, liquid splashing (Splash) of the rinse liquid L2 due to the gas G is likely to occur near the center of the workpiece W. Then, the rinse liquid L2 is discharged in the direction along the rotation direction of the workpiece W by using the rinse nozzle 46A, and the distance between the discharge position P1 of the rinse liquid L2 and the discharge position of the gas G in the radial direction of the workpiece W is reduced to a certain extent, so that the gas-liquid interface D0 can be moved in the outer circumferential direction while suppressing interference fringes and liquid splashing of the rinse liquid L2, and residue can be prevented from remaining after the treatment.
In the above-described flow (step), the gas nozzle 56, the rinse nozzle 46A, and the rinse nozzle 46B are independently moved. Therefore, as shown in fig. 4 and the like, the 3 nozzles are supported by mutually different arms and can be independently moved. However, as shown in fig. 8 (b) and step S12, there is a time when the gas nozzle 56 and the rinse nozzle 46A are simultaneously moved. Thus, the gas nozzle 56 and the flushing nozzle 46A may be integrally movable. In this case, in step S14, when the gas nozzle 56 is moved in the outer circumferential direction, the control device 100 may move the rinse nozzle 46A, in which the supply of the rinse liquid L2 is stopped, in the outer circumferential direction together with the gas nozzle 56.
(Modification of the flow of removing flushing liquid L2-1)
In the above-described flow, the case where 3 nozzles (the gas nozzle 56, the rinse nozzle 46A, and the rinse nozzle 46B) are supported by mutually different arms is described. Therefore, after stopping the discharge of the rinse liquid L2 from the rinse nozzle 46A in step S13, there is a step of moving only the rinse nozzle 46B in the outer circumferential direction in step S14. That is, in step S14, the distance between the discharge position P2 of the rinse liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W is adjusted so as to be increased. In contrast, by providing two gas nozzles and attaching one gas nozzle and one rinse nozzle to one arm, the positional relationship between the discharge position of the rinse liquid L2 and the discharge position of the gas G is fixed from the beginning. With such a configuration including two arms, when the same flow as the steps shown in fig. 7 and 8 is to be performed, the step of moving only the flushing nozzle 46B as shown in step S14 can be omitted. The specific flow is described below as a first modification with reference to fig. 9 and 10.
First, on the premise that the supply portion of the developing unit U3 has gas nozzles 56A, 56B (two gas nozzles). The gas nozzles 56A and 56B may be connected to the gas delivery unit, respectively, and the gas G stored in the container may be supplied by a pump or the like.
As shown in fig. 10 (a), the gas nozzle 56A and the rinse nozzle 46A are supported by a first arm 61, and the gas nozzle 56B and the rinse nozzle 46B are supported by a second arm 62. At this time, the gas nozzles 56A and 56B are each arranged so as to discharge the gas G toward the center CP of the workpiece W. Fig. 10 (a) shows an example in which the discharge ports of the gas nozzles 56A and 56B overlap in a plan view, but the arrangement of the two nozzles can be changed appropriately. The rinse nozzles 46A provided in the first arm 61 are arranged such that the discharge positions P1 are located apart from the center CP by a distance r1 in the radial direction of the workpiece W. That is, in the first arm 61, the discharge position of the gas nozzle 56A and the discharge position P1 of the rinse nozzle 46A are arranged to be spaced apart by a distance r1 in the radial direction of the workpiece W. On the other hand, the rinse nozzles 46B provided in the second arm 62 are arranged such that the discharge position P2 is located at a distance r2 from the center CP in the radial direction of the workpiece W. That is, in the second arm 62, the discharge position of the gas nozzle 56B and the discharge position P2 of the rinse nozzle 46B are arranged to be spaced apart by a distance r2 in the radial direction of the workpiece W. On the premise of such nozzle arrangement, the control device 100 executes the following flow.
First, as shown in fig. 9, the control device 100 starts (ON) the supply of the gas G (nitrogen gas) from the gas nozzles 56A of the first arm 61 and the gas nozzles 56B of the second arm 62. At the same time, the control device 100 starts (ON) the supply of the rinse liquid L2 from the rinse nozzle 46A of the first arm 61 in the rotation direction of the workpiece W and the supply of the rinse liquid L2 from the rinse nozzle 46B of the second arm 62 in the direction toward the outer periphery of the workpiece W (step S21). As shown in fig. 10 (a), the gas nozzles 56A and 56B are arranged to discharge the gas G at the center CP of the workpiece W. The rinse nozzle 46A that extends in the rotation direction and discharges the rinse liquid L2 in the rotation direction is disposed such that the discharge position P1 is located at a distance r1 from the center CP in the radial direction of the workpiece W. The rinse nozzle 46B that extends in the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer circumferential direction in the radial direction is disposed such that the discharge position P2 is located at a distance r2 from the center CP in the radial direction of the workpiece W. When the discharge of the gas G is started in this state, the dry core region D is formed as shown in fig. 10 (a), and a gas-liquid interface D0 is formed at the boundary between the region where the rinse liquid L2 remains and the dry core region D.
In this state, the discharge amount is adjusted so that the discharge amount of the rinse liquid L2 from the rinse nozzle 46B (discharge amount per unit time) is smaller than the discharge amount of the rinse liquid L2 from the rinse nozzle 46A (discharge amount per unit time). As an example, the discharge amount of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml/min, and the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml/min. By using such a relationship between the discharge amounts, the flow of the rinse liquid L2 in the spiral direction, which is formed by the rinse liquid L2 discharged in the rotation direction from the rinse nozzle 46A, becomes the main flow in the region spaced apart from the center CP of the workpiece W by the distances r1 to r 2. In addition, by applying the rinse liquid L2 discharged in the outer circumferential direction from the rinse nozzle 46B to the outer circumferential side of the distance r2, a flow of the rinse liquid L2 further outward can be formed.
Next, the control device 100 moves the first arm 61 in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S22). Fig. 10 (b) shows a state in which the first arm 61 is moved 15mm in the outer circumferential direction of the workpiece W. The first arm 61 is moved to move the rinse nozzle 46A in the outer circumferential direction, and the region to which the rinse liquid L2 is supplied is moved in the outer circumferential direction. Further, by moving the gas nozzle 56A, the region to which the gas G is supplied also moves in the outer circumferential direction. As a result, the boundary between the rinse liquid L2 and the dry core region D, that is, the gas-liquid interface D0, formed on the center side of the workpiece W gradually moves to the outer peripheral side. That is, as shown in fig. 10 (b), the dry core region D gradually expands from the center CP toward the outer periphery side. In addition, the gas nozzle 56B and the rinse nozzle 46B of the second arm 62 do not move at this stage.
Next, the control device 100 stops (OFF) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S23). At this time, the gas G may be stopped from being discharged from the gas nozzle 56A. Fig. 10 (c) schematically shows a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A is stopped and the discharge of the gas G from the gas nozzle 56A is stopped. At this stage, the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is increased (UP) to the same extent as the discharge amount from the rinse nozzle 46A (for example, 350 ml/min). Accordingly, in the region on the outer peripheral side of the position separated from the center CP by the distance r2, the rinse liquid L2 discharged in the outer peripheral direction from the rinse nozzle 46B can be used to form a flow of the rinse liquid L2 going to the outer periphery.
Next, the control device 100 moves the second arm 62 in the outer circumferential direction (step S24). Fig. 10 (d) shows a state in which the second arm 62 (the gas nozzle 56B and the rinse nozzle 46B) is moved in the outer circumferential direction of the workpiece W, as compared with the state shown in fig. 10 (c). At this time, by moving the rinse nozzle 46B and the gas nozzle 56B in the outer circumferential direction, the region where the rinse liquid L2 is supplied and the region where the gas G is supplied are moved in the outer circumferential direction. As a result, the gas-liquid interface D0 of the workpiece W moves to the outer peripheral side. That is, as shown in fig. 10 (D), the dry core region D further spreads toward the outer periphery, and the region where the rinse liquid L2 remains is only the outer periphery. When the second arm 62 is moved further in the outer circumferential direction from this state, the entire rinse liquid L2 can be removed from the surface Wa of the workpiece W together with the dissolved product of the resist dissolved by the reaction with the developer liquid L1 by the gas G. As a result, the entire surface Wa of the work W becomes the dry core region D, and a resist pattern formed by development appears.
In this way, in the flow using the first arm 61 and the second arm 62, the gas nozzles 56A and 56B move following the movement of the flushing nozzles 46A and 46B, respectively, so that the distance between the flushing nozzles and the gas nozzles can be maintained. That is, the rinse nozzle can be moved in the outer circumferential direction while the first arm 61 and the second arm 62 maintain the discharge position of the rinse liquid L2 and the discharge position of the gas G.
In the flow shown in fig. 9, the gas nozzles and the rinse nozzles involved in the formation of the gas-liquid interface D0 are exchanged from the gas nozzles 56A and the rinse nozzles 46A to the gas nozzles 56B and the rinse nozzles 46B in step S23. At this time, when the discharge amount of the gas G from the gas nozzle is greatly changed in a short period of time, liquid splashing or the like may occur due to interference (interference) with the rinse liquid L2. Accordingly, the control device 100 may apply control or the like to gradually change the discharge amounts of the gas nozzles 56A and 56B.
(Modification of the flow of removing flushing liquid L2-2)
A second modification of the flow of removing the rinse liquid L2 in step S05 will be described with reference to fig. 11 and 12. In this modification, the difference is that the gas nozzle 56 does not move, as compared with the example described with fig. 7 and 8. Specifically, the gas nozzle 56 is fixed to the center CP of the workpiece W.
First, as shown in fig. 11, the control device 100 starts (ON) the supply of the gas G (nitrogen gas) from the gas nozzle 56 of the gas supply unit 50. At the same time, the control device 100 starts (ON) supplying the rinse liquid L2 from the rinse nozzle 46A of the first rinse liquid supply portion 40A in the rotation direction of the workpiece W and supplying the rinse liquid L2 from the rinse nozzle 46B of the second rinse liquid supply portion 40B in the direction toward the outer periphery of the workpiece W (step S31). At this time, as shown in fig. 12 (a), the gas nozzle 56 is arranged to discharge the gas G at the center CP of the workpiece W. The rinse nozzle 46A that extends in the rotation direction and discharges the rinse liquid L2 in the rotation direction is disposed such that the discharge position P1 is located at a distance r1 from the center CP in the radial direction of the workpiece W. The rinse nozzle 46B that extends in the radial direction of the workpiece W and discharges the rinse liquid L2 in the radial outward circumferential direction is disposed such that the discharge position P2 is located at a distance r2 from the center CP in the radial direction of the workpiece W. By starting the discharge of the gas G in this state, as shown in fig. 12 (a), the rinse liquid L2 is gradually removed from the center, and the dry core region D in which the surface Wa of the workpiece W is exposed is formed. In addition, a gas-liquid interface D0 is formed at the boundary between the region where the rinse liquid L2 remains and the dry core region D. The rinse nozzle 46A is disposed further inside than the rinse nozzle 46B. That is, r1< r 2. When the diameter of the workpiece W is 200mm, the distance r1 can be set to, for example, 10 to 25mm, and the distance r2 can be set to 20 to 50mm. Fig. 12 (a) schematically shows a state where the distance r1 is set to 15mm and the distance r2 is set to 30 mm.
In this state, the control device 100 adjusts the discharge amount so that the discharge amount of the rinse liquid L2 from the rinse nozzle 46B (discharge amount per unit time) is smaller than the discharge amount of the rinse liquid L2 from the rinse nozzle 46A (discharge amount per unit time). As an example, the discharge amount of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml/min, and the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml/min. By configuring the relationship between the discharge amounts as described above, the flow of the rinse liquid L2 in the spiral direction formed by the rinse liquid L2 discharged in the rotation direction from the rinse nozzle 46A becomes the main flow in the region spaced apart from the center CP of the workpiece W by the distances r1 to r 2. In addition, by applying the rinse liquid L2 discharged in the outer circumferential direction from the rinse nozzle 46B to the outer circumferential side of the distance r2, a flow of the rinse liquid L2 further outward can be formed.
Next, the control device 100 moves the rinse nozzle 46A in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S32). Fig. 12 (b) shows a state in which the rinse nozzle 46A is moved 15mm in the outer circumferential direction of the workpiece W. By moving the rinse nozzle 46A in the outer circumferential direction, the region to which the rinse liquid L2 is supplied is moved in the outer circumferential direction. Thus, the boundary between the rinse liquid L2 and the dry core region D, that is, the gas-liquid interface D0, formed on the center side of the workpiece W gradually moves to the outer peripheral side. That is, as shown in fig. 12 (b), the dry core region D gradually expands from the center CP toward the outer periphery side. Even when the gas nozzle 56 is not moved, the gas-liquid interface D0 is moved to the outer peripheral side by moving the discharge position of the rinse liquid L2 from the rinse nozzle 46A in the outer peripheral direction.
Next, the control device 100 stops (OFF) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S33). Fig. 12 (c) schematically shows a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A is stopped. At this stage, the control device 100 may increase the discharge amount of the rinse liquid L2 from the rinse nozzle 46B to the same level as the discharge amount from the rinse nozzle 46A (for example, 350 ml/min). Accordingly, in the region on the outer peripheral side of the position separated from the center CP by the distance r2, the rinse liquid L2 discharged in the outer peripheral direction from the rinse nozzle 46B can form a flow of the rinse liquid L2 going to the outer periphery.
Next, the control device 100 moves the rinse nozzle 46B in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S34). Fig. 12 (d) shows a state in which the rinse nozzle 46B is moved in the outer circumferential direction of the workpiece W, as compared with the state shown in fig. 12 (c). By moving the rinse nozzle 46B in the outer circumferential direction, the region to which the rinse liquid L2 is supplied is moved in the outer circumferential direction. As a result, the gas-liquid interface D0 of the workpiece W moves further toward the outer periphery side. That is, as shown in fig. 12 (D), the dry core region D further spreads toward the outer periphery, and the region where the rinse liquid L2 remains is only the outer periphery. When the rinse nozzle 46B is moved further in the outer circumferential direction from this state, the rinse liquid L2 can be removed from the surface Wa of the workpiece W by the gas G, all together with the dissolved substance of the resist dissolved by the reaction with the developer L1. As a result, the entire surface Wa of the work W becomes the dry core region D, and a resist pattern formed by development appears.
In the flow of the second modification shown in fig. 11 and 12, the gas nozzle 56, the flushing nozzle 46A, and the flushing nozzle 46B operate substantially independently. Therefore, by operating these nozzles individually, fine control can be performed.
In the above-described flow, when the rinse nozzle 46B is moved outward while the rinse liquid L2 is discharged from the rinse nozzle 46B alone in step S34, the distance between the rinse nozzle 46B and the gas nozzle 56 fixed at the center gradually increases. When the distance from the gas nozzle 56 increases, it becomes difficult to enlarge the dry core area D with the gas G discharged from the gas nozzle 56, and a disturbance of the gas-liquid interface D0 may occur. Therefore, the control device 100 may increase the discharge amount of the gas G from the gas nozzle 56 as the distance between the gas nozzle 56 and the rinse nozzle 46 increases. In addition, as in the first modification shown in fig. 9 and 10, the supply portion of the developing unit U3 may be provided with a second gas nozzle that is movable integrally with the rinse nozzle 46B, and the second gas nozzle may be operated by 1 arm. With such a configuration, the distance between the discharge position P2 of the rinse liquid L2 and the discharge position of the gas G can be kept constant on the outer peripheral side of the workpiece W, that is, in the stage of forming the gas-liquid interface D0 by the rinse nozzle 46B and the gas nozzle, and the rinse liquid L2 can be effectively removed.
[ Effect ]
In the coating and developing apparatus 2 as the substrate processing apparatus described above, the discharge position of the rinse liquid from the rinse nozzles 46A and 46B is moved in the outer circumferential direction from the center of the workpiece W while the inert gas is continuously discharged from the gas nozzle 56 with respect to the workpiece W to which the developer is supplied. This can move the gas-liquid interface D0 formed by the inert gas and the rinse liquid L2 from the center to the outer circumferential direction. At this time, when the rinse nozzles 46A and 46B move from the center side to the outer peripheral side of the workpiece W, the discharge direction of the rinse liquid L2 is switched from the direction along the rotation direction of the workpiece W to the direction along the radial direction. When forming the gas-liquid interface on the center side of the workpiece W, the discharge direction of the rinse liquid from the rinse nozzle is set to be along the rotation direction of the workpiece W, whereby the generation of residues after the removal of the rinse liquid can be suppressed. On the other hand, on the outer peripheral side of the workpiece W, the discharge direction of the rinse liquid from the rinse nozzle is set to be along the radial direction of the workpiece W, whereby the generation of residues after the rinse liquid removal can be suppressed. Therefore, by switching the discharge direction of the rinse liquid when the gas-liquid interface D0 is moved in the peripheral direction as described above, the residues on the surface of the workpiece W after the cleaning of the workpiece W can be reduced.
As a specific method for realizing the above-described structure, as shown in the first modification, it is also possible to configure a first arm 61 provided with the first flushing nozzle 46A and the first gas nozzle 56A, and a second arm 62 provided with the second flushing nozzle 46B and the second gas nozzle 56B. By adopting such a configuration, the inert gas and the rinse liquid are supplied to the first arm 61, which is located on the center side of the workpiece W and in which the discharge direction of the rinse liquid from the first rinse nozzle 46A is along the rotation direction of the workpiece W, to form the gas-liquid interface D0, whereby the generation of residues after the rinse liquid removal is suppressed. On the other hand, on the outer peripheral side of the workpiece W, the second arm 62, in which the discharge direction of the rinse liquid from the second rinse nozzle 46B is the direction along the radial direction of the substrate, supplies the inert gas and the rinse liquid to form the gas-liquid interface D0, whereby the generation of residues after the rinse liquid removal can be suppressed. Therefore, by adopting the above configuration, the residues on the surface of the workpiece W after cleaning the workpiece W can be reduced.
As described in the above embodiment, the gas nozzle 56, the first flushing nozzle 46A, and the second flushing nozzle may be provided in an arm that can move independently of each other. At this time, the first rinse nozzle 46A may be configured such that the direction of the rinse liquid discharged from the nozzle is along the direction of rotation of the workpiece W, and the second rinse nozzle 46B may be configured such that the direction of the rinse liquid discharged from the nozzle is along the radial direction of the workpiece W. At this time, the control device 100 is switched to the first state in which the rinse liquid is supplied from the first rinse nozzle 46A to form the gas-liquid interface D0 on the center side of the workpiece W than the predetermined switching position, and is switched to the second state in which the rinse liquid is supplied from the second rinse nozzle 46B to form the gas-liquid interface D0 on the outer peripheral side of the workpiece W than the switching position. At this time, the gas nozzles 56 may be moved in the outer circumferential direction in response to the movement of the flushing nozzles 46A and 46B in the outer circumferential direction in the first state and the second state.
In the case of the above-described configuration, the rinse liquid is supplied from the first rinse nozzle 46A, which is located on the center side of the workpiece W and has a discharge direction of the rinse liquid along the rotation direction of the substrate, to form the gas-liquid interface D0. On the other hand, on the outer peripheral side of the workpiece W, a rinse solution is supplied from the second rinse nozzle 46B in which the discharge direction of the rinse solution is along the radial direction of the substrate, and a gas-liquid interface D0 is formed. Therefore, by adopting the above configuration, the residues on the surface of the workpiece W after cleaning the workpiece W can be reduced.
In addition, as another embodiment, the gas jet nozzle 56A may be provided as a first gas jet nozzle, the discharge position of which is fixed to the center of the workpiece W, a first arm provided with the first flushing nozzle 46A, and a second arm provided with the second flushing nozzle 46B and the gas jet nozzle 56B as a second gas jet nozzle. In this case, the first rinse nozzle 46A may be configured such that the direction of the rinse liquid discharged from the nozzle is along the direction of rotation of the workpiece W, and the second rinse nozzle 46B may be configured such that the direction of the rinse liquid discharged from the nozzle is along the radial direction of the workpiece W. At this time, the control device 100 may form a first state at a position closer to the center of the workpiece W than the predetermined switching position, and in the first state, the rinse liquid may be supplied from the first rinse nozzle 46A while the inert gas is supplied from the first gas nozzle 56A, thereby forming the gas-liquid interface D0. Further, the second state may be switched to a second state in which the gas-liquid interface D0 is formed by supplying the inert gas and the rinse liquid while moving the second arm, at a position closer to the outer periphery of the workpiece W than the switching position.
In the case of the above-described configuration, the rinse liquid is supplied from the first rinse nozzle 46A, which has a discharge direction of the rinse liquid along the rotation direction of the substrate, to form the gas-liquid interface D0 also on the center side of the workpiece W. On the other hand, on the outer peripheral side of the workpiece W, a rinse solution is supplied from the second rinse nozzle 46B in which the discharge direction of the rinse solution is along the radial direction of the substrate, and a gas-liquid interface D0 is formed. Therefore, by adopting the above configuration, the residues on the surface of the workpiece W after cleaning the workpiece W can be reduced.
The supply unit may include a first gas nozzle whose discharge position is fixed to the center of the workpiece W, and a first arm provided with a first rinse nozzle capable of changing the direction of the discharged rinse liquid. At this time, the control device 100 may gradually change the direction of the rinse liquid discharged from the first rinse nozzle from the direction along the rotation direction of the workpiece W to the direction along the radial direction of the substrate when the first rinse nozzle moves in the outer circumferential direction.
In the case of the above-described configuration, the rinse liquid is supplied from the first rinse nozzle 46A, which is located on the center side of the workpiece W and has a discharge direction of the rinse liquid along the rotation direction of the substrate, to form the gas-liquid interface D0. On the other hand, on the outer peripheral side of the workpiece W, a rinse solution is supplied from the second rinse nozzle 46B in which the discharge direction of the rinse solution is along the radial direction of the substrate, and a gas-liquid interface D0 is formed. Therefore, by adopting the above configuration, the residues on the surface of the workpiece W after cleaning the workpiece W can be reduced.
In the coating and developing apparatus 2 as the substrate processing apparatus, the rinse liquid may be discharged from the second rinse nozzle 46B in the first state. In the second state, the discharge of the rinse liquid from the first rinse nozzle 46A may be stopped, and the discharge amount of the rinse liquid from the second rinse nozzle 46B may be increased as compared with the first state. With the above configuration, in the first state, the rinse liquid is discharged from the second rinse nozzle, and the rinse liquid can be promoted to move in the peripheral direction from the vicinity of the center of the substrate. On the other hand, in the second state, since the discharge of the rinse liquid from the first rinse nozzle is stopped, the movement of the rinse liquid in the peripheral direction can be promoted by increasing the discharge amount of the rinse liquid discharged from the second rinse nozzle.
In the second state, the control device 100 may stop the discharge of the gas from the first gas nozzle 56A. By adopting the above-described configuration, in the second state, the flow (gas flow) of the gas on the surface of the workpiece W is stabilized, and the disturbance of the gas-liquid interface D0 can be prevented.
The distance between the discharge position of the rinse liquid from the first rinse nozzle and the discharge position of the gas from the gas nozzle on the workpiece W in the first state may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the second gas nozzle on the workpiece W in the second state.
In order to achieve the above-described configuration, for example, the distance between the discharge position of the rinse liquid from the first rinse nozzle 46A on the first arm 61 and the discharge position of the gas from the first gas nozzle 56A may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle 46B on the second arm 62 and the discharge position of the gas from the second gas nozzle 56B.
When the gas-liquid interface D0 is formed on the workpiece W, the residue can be suppressed when the discharge position of the rinse liquid is close to (near) the discharge position of the gas on the center side of the workpiece W, and the residue can be suppressed when the discharge position of the rinse liquid is distant from the discharge position of the gas on the outer peripheral side of the workpiece W. As described above, the first flushing nozzle and the gas nozzle are arranged so that the discharge positions thereof are close to each other, and the second flushing nozzle and the gas nozzle are arranged so that the discharge positions thereof are distant from each other, whereby the residue after cleaning can be further reduced.
While the above description has been given of a plurality of exemplary embodiments, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and changes may be made. In addition, elements in different embodiments can be combined to form other embodiments.
For example, in the above embodiment, the case where the rinse liquid is supplied to the workpiece W to which the developer is supplied and the rinse liquid is removed has been described. However, the processing described in the above embodiment can be applied to processing using other chemical solutions.
In the above embodiment, the case where the discharge amount of the rinse liquid L2 and the discharge amount of the gas G are intermittently switched will be described. However, the discharge amount of the rinse liquid L2 and the discharge amount of the gas G may be changed stepwise or continuously. As described above, by stably forming the gas-liquid interface D0 and gradually moving it toward the outer peripheral side of the workpiece W, the generation of residues can be suppressed. Therefore, in order to achieve such a state, the discharge amount of the rinse liquid L2 and the discharge amount of the gas G can be appropriately adjusted. In addition, the rotation speed of the workpiece W or the like may be appropriately adjusted.
From the foregoing, it will be appreciated that various embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the scope and spirit of the invention. Therefore, the embodiments described in the present specification are not intended to limit the present invention, and the true scope and spirit are indicated by the following claims.
Description of the reference numerals
A substrate processing system, a2 application and development device, a 3 exposure device;
20..a holding rotary part, 36..a developing nozzle, 40..a rinse liquid supply part
A first rinse solution supply unit, and a second rinse solution supply unit, 40B;
flush nozzle 46A. Flush nozzle (first flush nozzle);
flush nozzle (second flush nozzle);
47A, 47B; a gas supply section, a gas nozzle;
gas nozzle (first gas nozzle);
gas nozzle (second gas nozzle);
57. arm, 61 first arm, 62 second arm;
control device.
Claims (14)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-113014 | 2022-07-14 | ||
| JP2022113014 | 2022-07-14 | ||
| PCT/JP2023/024685 WO2024014346A1 (en) | 2022-07-14 | 2023-07-03 | Substrate processing device, substrate processing method, and substrate processing program |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119487617A true CN119487617A (en) | 2025-02-18 |
Family
ID=89536606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380051299.0A Pending CN119487617A (en) | 2022-07-14 | 2023-07-03 | Substrate processing device, substrate processing method and substrate processing program |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2024014346A1 (en) |
| KR (1) | KR20250037538A (en) |
| CN (1) | CN119487617A (en) |
| TW (1) | TW202427583A (en) |
| WO (1) | WO2024014346A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6007925B2 (en) * | 2013-05-28 | 2016-10-19 | 東京エレクトロン株式会社 | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
| JP5941023B2 (en) * | 2013-08-21 | 2016-06-29 | 東京エレクトロン株式会社 | Substrate cleaning apparatus, substrate cleaning method, and computer-readable recording medium |
| JP7073658B2 (en) * | 2017-09-25 | 2022-05-24 | 東京エレクトロン株式会社 | Board processing method, board processing device, and storage medium |
-
2023
- 2023-07-03 JP JP2024533654A patent/JPWO2024014346A1/ja active Pending
- 2023-07-03 WO PCT/JP2023/024685 patent/WO2024014346A1/en active Application Filing
- 2023-07-03 CN CN202380051299.0A patent/CN119487617A/en active Pending
- 2023-07-03 KR KR1020257004809A patent/KR20250037538A/en active Pending
- 2023-07-04 TW TW112124862A patent/TW202427583A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250037538A (en) | 2025-03-17 |
| WO2024014346A1 (en) | 2024-01-18 |
| JPWO2024014346A1 (en) | 2024-01-18 |
| TW202427583A (en) | 2024-07-01 |
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