JP6793048B2 - Substrate processing equipment, dummy dispensing method and computer-readable recording medium - Google Patents

Description

The present disclosure relates to a substrate processing apparatus, a dummy dispensing method, and a computer-readable recording medium.

At present, when a substrate (for example, a semiconductor wafer) is microfabricated to manufacture a semiconductor device, it is widely practiced to form an uneven pattern on the substrate by using photolithography technology. For example, in the step of forming an uneven pattern on a substrate, a resist film is formed on the surface of the substrate, the resist film is exposed along a predetermined pattern, and the resist film after exposure is developed with a developing solution. This includes forming a resist pattern and etching a substrate through the resist pattern.

In this way, when the substrate is microfabricated, various processing liquids are supplied to the substrate from the nozzles. On the other hand, during standby when the processing liquid is not supplied from the nozzle to the substrate, the processing liquid is dummy-dispensed from the nozzle. The dummy dispense is a process of appropriately discharging the treatment liquid from the nozzle during standby in order to prevent the treatment liquid from staying in the nozzle and deteriorating.

Patent Document 1 describes a substrate holding mechanism configured to hold a substrate, a supply unit configured to supply a processing liquid from a nozzle to the substrate held by the substrate holding mechanism, and a substrate holding mechanism. A substrate processing apparatus including a processing unit including nozzle baths arranged adjacent to each other is disclosed. In the processing unit, dummy discharge is performed from the nozzle with the nozzle positioned above the nozzle bath during standby when the processing liquid is not supplied to the substrate.

JP-A-2016-042565

However, since the nozzle bath is generally small, when the treatment liquid is discharged from the nozzle into the nozzle bath, there is a concern that the treatment liquid that collides with the wall surface of the nozzle bath bounces off the nozzle and the bounced treatment liquid adheres to the vicinity of the nozzle discharge port. there were. In this case, it is conceivable that the processing liquid adhering to the vicinity of the discharge port of the nozzle may fall on the substrate during the processing of the substrate, causing defects in the processed substrate.

Further, the substrate processing apparatus generally includes a plurality of processing modules. In this case, since the processing unit includes not only the substrate holding mechanism but also the nozzle bus, the size of the processing unit tends to increase. Therefore, when a large number of processing units are mounted on the substrate processing apparatus in order to increase the processing amount of the substrate, there is a concern that the substrate processing apparatus also becomes large and leads to an increase in cost.

Therefore, the present disclosure describes a substrate processing apparatus, a dummy dispensing method, and a computer-readable recording medium capable of downsizing the processing unit while suppressing liquid splashing to the discharge port of the nozzle.

[1] The substrate processing apparatus according to one aspect of the present disclosure includes a rotation holding unit that rotates while holding the substrate, and a first supply unit configured to supply liquid to the surface of the substrate from an upper nozzle. A cup that surrounds the substrate held by the rotation holding unit and receives the liquid supplied from the first supply unit, and a control unit are provided. The cup has an outer peripheral wall that prevents the liquid shaken off from the rotating substrate while being held by the rotation holding portion. The control unit executes a process of dummy dispensing the processing liquid onto the inclined surface from the upper nozzle.

In the substrate processing apparatus according to one aspect of the present disclosure, the control unit controls the first supply unit to allow the liquid to be dummy-dispensed on the inclined surface from the upper nozzle. Since the space inside the cup is wider than that of the conventional nozzle bath, even if the liquid is discharged from the upper nozzle, it is difficult for the liquid bounced from the inside of the cup to reach the upper nozzle. Therefore, it is possible to suppress the liquid splashing to the upper nozzle. Therefore, defects are less likely to occur in the treated substrate. Further, in the substrate processing apparatus according to one aspect of the present disclosure, dummy dispensing is performed from the upper nozzle into the cup. Therefore, a nozzle bath for dummy dispensing becomes unnecessary. Therefore, it is possible to reduce the size of the processing unit.

[2] In the device of the first item, the control unit controls the first supply unit to discharge the upper nozzle below the upper end of the cup or below the substrate support surface of the chuck of the rotation holding unit. The process of dummy-dispensing the liquid from the upper nozzle may be executed with the outlet located. In this case, the momentum of the liquid discharged from the upper nozzle colliding with the object in the cup is weakened. Therefore, since the liquid is unlikely to change into a mist, it is possible to suppress the scattering of the mist around the mist. In particular, when the discharge port of the upper nozzle is located below the substrate support surface of the chuck of the rotation holding portion, the generated mist is less likely to adhere to the substrate support surface of the chuck. Therefore, it is possible to suppress contamination of the substrate by the mist.

[3] In the device according to the first or second paragraph, a liquid receiving portion on which the upper nozzle can stand by may be provided on the outer peripheral surface of the cup. In this case, in the standby state in which the upper nozzle does not discharge the liquid into the cup, the upper nozzle stands by at the standby position above the liquid receiving portion. Therefore, even if the liquid drips from the upper nozzle in the standby state, the dropped liquid is received by the liquid receiving portion, so that it is possible to suppress contamination of the outside of the cup by the liquid. Further, since a part of the liquid receiving portion is formed of the outer peripheral surface of the cup, the liquid receiving portion itself can be miniaturized. Therefore, it is possible to further reduce the size of the processing unit.

[4] The apparatus according to any one of the above items 1 to 3 further includes an exhaust unit configured to exhaust the inside of the cup, and the first supply unit processes the surface of the substrate. A treatment liquid nozzle for supplying the liquid, a cleaning liquid nozzle for supplying the cleaning liquid to the surface of the substrate, a first drive unit for moving the first arm provided with the treatment liquid nozzle, and a cleaning liquid nozzle are provided. It has a second drive unit for moving the second arm, and the control unit controls the first supply unit and the exhaust unit to exhaust the inside of the cup by the exhaust unit, and the first drive unit operates. The first process of positioning the treatment liquid nozzle in the inner region by moving the first arm, and the first process of positioning the cleaning liquid nozzle in the inner region by moving the second arm by the second drive unit. After the second treatment and the first and second treatments, a third treatment for dummy dispensing the treatment liquid and the cleaning liquid from the treatment liquid nozzle and the cleaning liquid nozzle, respectively, may be executed. In this case, dummy discharge from the treatment liquid nozzle and the cleaning liquid nozzle is performed with the inside of the cup exhausted. Therefore, even when the treatment liquid and the cleaning liquid discharged from the treatment liquid nozzle and the cleaning liquid nozzle collide with the object in the cup and these change into a mist shape, the mist is exhausted from the inside of the cup. Therefore, since the mist does not spread to the surroundings, it is possible to suppress the adhesion of the mist to the treatment liquid nozzle or the cleaning liquid nozzle. As a result, the mist aggregates on the surface of the nozzle to form droplets, and the droplets are prevented from falling onto the substrate during the processing of the substrate, so that defects are less likely to occur in the treated substrate.

[5] In the device of the fourth item, in the first process, the control unit moves the first arm by the first drive unit to move the processing liquid nozzle to a predetermined first of the inner regions. By moving the second arm by the second drive unit in the second process, the cleaning liquid nozzle is placed on the inner region opposite to the first region and the rotation holding portion is on the opposite side. It may be located in the second region of. In this case, at the time of dummy discharge from the treatment liquid nozzle and the cleaning liquid nozzle, the treatment liquid nozzle and the cleaning liquid nozzle are positioned so as to face each other with the rotation holding portion between them. Therefore, the bounced liquids are less likely to adhere to each other. Therefore, it is possible to perform dummy dispense from both nozzles at the same time while suppressing liquid splashing from both nozzles. As a result, the processing time of the dummy dispense is shortened, so that the throughput can be improved.

[6] In the apparatus of the fifth item, the first region is a region of the inner region closer to the standby position where the treatment liquid nozzle and the cleaning liquid nozzle stand by outside the cup than the rotation holding portion, and is a second region. May be a region of the inner region that is farther from the standby position than the rotation holding portion. In this case, the treatment liquid nozzle does not exceed the rotation holding portion when the dummy is dispensed from the treatment liquid nozzle. Therefore, even if the treatment liquid drips from the treatment liquid nozzle while the treatment liquid nozzle is moving, the treatment liquid is less likely to adhere to the rotation holding portion. Therefore, it is possible to suppress contamination of the rotation holding portion by the treatment liquid.

[7] In the apparatus according to any one of the above items 4 to 6, the first supply unit supplies dry gas to the surface of the substrate and has a gas nozzle provided on the second arm. The control unit controls the rotation holding unit and the first supply unit, and in a state where the chuck of the rotation holding unit is rotated, the second arm is moved to the second driving unit so that the gas nozzle passes above the chuck. The fourth process of supplying the dry gas from the gas nozzle to the chuck may be executed while moving the gas. In this case, since the drying gas is supplied from the gas nozzle to the rotating chuck, foreign substances such as particles adhering to the chuck are removed. Therefore, the suction force of the substrate by the chuck is maintained. As described above, since the chuck is mechanically cleaned by the gas nozzle without manpower, the cleaning process can be automated and shortened.

[8] In the apparatus of the seventh item, in the fourth process, the control unit has the gas nozzle and the cleaning liquid nozzle both moved from the central portion to the peripheral portion of the chuck in a state where the chuck is rotated. When the gas nozzle and the cleaning liquid nozzle pass above the central portion of the chuck while moving the arm 2 by the second drive unit, the dry gas is supplied from the gas nozzle to the central portion of the chuck, but from the cleaning liquid nozzle. When the cleaning liquid is not supplied and the gas nozzle and the cleaning liquid nozzle pass above the intermediate region between the central portion and the peripheral portion of the chuck, the dry gas and the cleaning liquid are supplied from the gas nozzle and the cleaning liquid nozzle to the intermediate region of the chuck, respectively. And when the gas nozzle and the cleaning liquid nozzle pass above the peripheral edge of the chuck, the dry gas is supplied from the gas nozzle to the peripheral edge of the chuck, but the cleaning liquid is not supplied from the cleaning liquid nozzle. You may. In this case, since not only the drying gas but also the cleaning liquid is supplied to the chuck, the chuck can be further cleaned. Further, since the cleaning liquid is not supplied to the central portion of the chuck, it becomes difficult for the cleaning liquid to enter the suction hole located in the central portion of the chuck. Therefore, it is possible to suppress a decrease in the adsorption capacity of the substrate due to the chuck. Further, since the dry gas is supplied from the gas nozzle to the peripheral portion of the chuck but the cleaning liquid is not supplied from the cleaning liquid nozzle, the cleaning liquid spread on the peripheral portion of the chuck by the centrifugal force is blown off by the dry gas. Therefore, it is possible to prevent the cleaning liquid from remaining on the chuck. Therefore, it is possible to suppress contamination by the cleaning liquid of the chuck while cleaning the chuck with the cleaning liquid and the drying gas.

[9] The apparatus according to any one of the above items 4 to 8 has a second supply unit configured to supply the cleaning liquid from the lower nozzle located in the cup to the back surface of the substrate. Further, the control unit may control the first and second supply units to execute a fifth process of supplying the cleaning liquid from the lower nozzle to the first or second arm. In this case, even if the processing liquid discharged from the processing liquid nozzle collides with an object in the cup and bounces off and adheres to the lower surface of the first or second arm, the lower nozzle moves to the first or second arm. The cleaning liquid supplied removes the treatment liquid from the first or second arm. Therefore, it is possible to prevent the processing liquid from falling onto the substrate from the first or second arm during the processing of the substrate. Therefore, defects are less likely to occur on the treated substrate.

[10] The apparatus according to the seventh or eighth paragraph further includes a second supply unit configured to supply the cleaning liquid from the lower nozzle located in the cup to the back surface of the substrate, and is a control unit. Controls the first and second supply units to discharge the cleaning liquid from the lower nozzle to supply the cleaning liquid to the first or second arm outside the rotation holding unit, and dry gas from the gas nozzle. May be executed to form a flow of dry gas on the rotation holding portion side of the position where the cleaning liquid discharged from the lower nozzle is supplied to the first or second arm. .. In this case, the airflow of the dry gas from the gas nozzle is formed on the rotation holding portion side of the position where the cleaning liquid discharged from the lower nozzle is supplied to the first or second arm continuously or at a predetermined timing. Will be done. Therefore, even if the cleaning liquid discharged from the lower nozzle collides with the first or second arm and bounces or becomes mist-like, the bounced cleaning liquid or mist-like cleaning liquid may flow to the rotation holding portion side. Suppressed by dry gas. Therefore, the cleaning liquid or its mist is less likely to adhere to the substrate support surface of the chuck. As a result, it is possible to suppress contamination of the substrate by the cleaning liquid or its mist.

[11] The dummy dispensing method according to another aspect of the present disclosure is a method of dummy dispensing in an upper nozzle that is held by a rotation holding portion and supplies a liquid to the surface of a substrate surrounded by a cup. The cup has an outer peripheral wall that prevents the liquid shaken off from the rotating substrate while being held by the rotation holding portion. The dummy dispensing method according to another aspect of the present disclosure includes a step of dummy dispensing the liquid from the upper nozzle to the inner region between the outer peripheral wall and the rotation holding portion. In this case, the same effect as that of the device of the first item is obtained.

[12] In the method of the above item 11, in the above step, from the upper nozzle in a state where the discharge port of the upper nozzle is located below the upper end of the cup or below the substrate support surface of the chuck of the rotation holding portion. The treatment liquid may be dummy dispensed. In this case, the same effect as that of the device of the second item is obtained.

[13] In the method of the above item 11 or 12, the upper nozzle may be made to stand by above the liquid receiving portion provided on the outer peripheral surface of the cup when the dummy discharge is not performed. In this case, the same effect as that of the device of the third item is obtained.

[14] In the method according to any one of the above items 11 to 13, the dummy dispensing method according to another aspect of the present disclosure is provided with a processing liquid nozzle for supplying the processing liquid to the surface of the substrate. The first step of moving the first arm to position the treatment liquid nozzle in the inner region and the second arm provided with the cleaning liquid nozzle for supplying the cleaning liquid to the surface of the substrate are moved. A second step of positioning the cleaning liquid nozzle in the standby position above the inclined surface, and a third step of dummy dispensing the treatment liquid and the cleaning liquid from the treatment liquid nozzle and the cleaning liquid nozzle, respectively, after the first and second steps. The first to third steps may be carried out while exhausting the inside of the cup. In this case, the same effect as that of the device of the fourth item is obtained.

[15] In the method of the above paragraph 14, in the first step, the treatment liquid nozzle is positioned in a predetermined first region in the inner region, and in the second step, the cleaning liquid nozzle is positioned in the first of the inner regions. The rotation holding portion may be located in the second region on the opposite side of the region. In this case, the same effect as that of the device of the above item 5 is obtained.

[16] In the method of the above paragraph 15, the first region is a region of the inner region closer to the standby position where the treatment liquid nozzle and the cleaning liquid nozzle stand by outside the cup than the rotation holding portion, and is a second region. May be a region of the inner region that is farther from the standby position than the rotation holding portion. In this case, the same effect as that of the device of the above item 6 is obtained.

[17] In the method of any one of the above items 14 to 16, the gas nozzle provided on the second arm passes above the chuck in a state where the chuck of the rotation holding portion is rotated. A fourth step of supplying dry gas from the gas nozzle to the chuck while moving the second arm may be further included. In this case, the same effect as that of the device of the above item 7 is obtained.

[18] In the method of the above paragraph 17, in the fourth step, the second arm is moved so that both the gas nozzle and the cleaning liquid nozzle move from the central portion to the peripheral portion of the chuck in a state where the chuck is rotated. When the gas nozzle and the cleaning liquid nozzle pass above the central part of the chuck while moving, the dry gas is supplied from the gas nozzle to the central part of the chuck, but the cleaning liquid is not supplied from the cleaning liquid nozzle, and the gas nozzle and the cleaning liquid are not supplied. When the nozzle passes above the intermediate region between the central portion and the peripheral portion of the chuck, the dry gas and the cleaning liquid are supplied from the gas nozzle and the cleaning liquid nozzle to the intermediate region of the chuck, respectively, and the gas nozzle and the cleaning liquid nozzle are used. When the gas passes above the peripheral edge of the chuck, the dry gas is supplied from the gas nozzle to the peripheral edge of the chuck, but the cleaning liquid may not be supplied from the cleaning liquid nozzle. In this case, the same effect as that of the device of the above item 8 is obtained.

[19] The method according to any one of the above paragraphs 14 to 18 may further include a fifth step of supplying the cleaning liquid from the lower nozzle located in the cup to the first or second arm. .. In this case, the same operation and effect as that of the device of the above item 9 is obtained.

[20] In the method according to item 17 or 18, the cleaning liquid is discharged from the lower nozzle located in the cup to supply the cleaning liquid to the first or second arm outside the rotation holding portion. A sixth step of forming a flow of dry gas on the rotation holding portion side of the position where the cleaning liquid discharged from the lower nozzle is supplied to the first or second arm by discharging the dry gas from the gas nozzle. Further may be included. In this case, the same effect as that of the device of the above item 10 is obtained.

[21] The computer-readable recording medium according to another aspect of the present disclosure records a program for causing the substrate processing apparatus to execute the dummy dispensing method according to any one of the above items 11 to 20. There is. In the computer-readable recording medium according to another aspect of the present disclosure, it is possible to reduce the size of the processing unit while suppressing the liquid splashing to the discharge port of the nozzle, as in the dummy dispensing method described above. In the present specification, the computer-readable recording medium includes a non-transitory computer recording medium (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). (For example, a data signal that can be provided via a network) is included.

[22] The substrate processing apparatus according to another aspect of the present disclosure includes a rotation holding portion that rotates while holding the substrate, and an upper nozzle configured to supply liquid to the surface of the substrate from above. It includes a gas nozzle that supplies dry gas from above to the front surface of the substrate, a lower nozzle that is configured to supply cleaning liquid from below to the back surface of the substrate, and a control unit. The control unit controls the operation of each nozzle, discharges the cleaning liquid from the lower nozzle, and supplies the cleaning liquid to the arm that holds the upper nozzle or the arm that holds the gas nozzle outside the rotation holding unit. A process in which dry gas is discharged from a gas nozzle to form an air flow of dry gas on the rotation holding portion side of the position where the cleaning liquid discharged from the lower nozzle is supplied to the arm holding the upper nozzle or the arm holding the gas nozzle. To execute. In this case, the same effect as that of the device of the above item 10 is obtained.

[23] The arm cleaning method according to another aspect of the present disclosure is an arm or a rotation holding portion that holds an upper nozzle configured to supply a liquid from above to the surface of the substrate held by the rotation holding portion. The arm that holds the gas nozzle that supplies the dry gas from above to the front surface of the substrate held by the rotating holder is configured to supply the cleaning liquid from below to the back surface of the substrate that is held by the rotation holding portion. The step of cleaning the arm holding the upper nozzle or the arm holding the gas nozzle by supplying the cleaning liquid from the lower nozzle is included. In the step of cleaning the arm that holds the upper nozzle or the arm that holds the gas nozzle, the cleaning liquid is discharged from the lower nozzle, and the cleaning liquid is discharged to the arm that holds the upper nozzle or the arm that holds the gas nozzle outside the rotation holding portion. The dry gas is discharged from the gas nozzle, and the cleaning liquid discharged from the lower nozzle is supplied to the arm that holds the upper nozzle or the arm that holds the gas nozzle. Form an air flow. In this case, the same operation and effect as that of the device of the above item 22 is obtained.

[24] The computer-readable recording medium according to another aspect of the present disclosure records a program for causing the substrate processing apparatus to execute the dummy dispensing method according to the above paragraph 23. In this case, the same effect as that of the method of the above item 23 is obtained.

According to the substrate processing apparatus, the dummy dispensing method, and the computer-readable recording medium according to the present disclosure, it is possible to reduce the size of the processing unit while suppressing liquid splashing to the discharge port of the nozzle.

FIG. 1 is a plan view schematically showing a substrate processing system. FIG. 2 is a sectional view taken along line II-II of FIG. FIG. 3 is a sectional view taken along line III-III of FIG. FIG. 4 is a schematic view of the liquid treatment unit when viewed from the side. FIG. 5 is a schematic view of the vicinity of the cup when viewed from above. FIG. 6 is a block diagram showing a substrate processing system. FIG. 7 is a schematic view focusing on the hardware configuration of the controller. FIG. 8 is a flowchart for explaining the procedure of dummy dispense. FIG. 9 is a diagram for explaining the procedure of dummy dispensing, and is a schematic view when the vicinity of the cup is viewed from above. FIG. 10 is a flowchart for explaining a chuck cleaning procedure (first procedure). FIG. 11 is a diagram for explaining a chuck cleaning procedure (first procedure), and is a schematic view when viewed from the side with the cup as the center. FIG. 12 is a flowchart for explaining a chuck cleaning procedure (second procedure). FIG. 13 is a diagram for explaining a chuck cleaning procedure (second procedure), and is a schematic view when viewed from the side with the cup as the center. FIG. 14 is a diagram for explaining a cleaning procedure of the arm, and is a schematic view when viewed from the side with the cup as the center.

Since the embodiments according to the present disclosure described below are examples for explaining the present invention, the present invention should not be limited to the following contents. In the following description, the same reference numerals will be used for the same elements or elements having the same function, and duplicate description will be omitted.

[Board processing system]
As shown in FIG. 1, the board processing system 1 (board processing device) includes a coating and developing device 2 (board processing device) and a controller 10 (control unit). An exposure apparatus 3 is attached to the substrate processing system 1. The exposure apparatus 3 includes a controller (not shown) capable of communicating with the controller 10 of the substrate processing system 1. The exposure apparatus 3 transfers a wafer W (substrate) to and from the coating and developing apparatus 2 to perform an exposure process (pattern exposure) of a photosensitive resist film formed on the surface Wa (see FIG. 4 and the like) of the wafer W. It is configured to do. Specifically, the exposed portion of the photosensitive resist film (photosensitive film) is selectively irradiated with energy rays by a method such as immersion exposure. Examples of the energy ray include ArF excimer laser, KrF excimer laser, g-ray, i-ray, and extreme ultraviolet (EUV).

The coating and developing apparatus 2 performs a treatment of forming various coating films Cf (see FIG. 4) including a photosensitive resist film on the surface Wa of the wafer W before the exposure processing by the exposure apparatus 3. The coating and developing apparatus 2 develops the photosensitive resist film after the exposure treatment of the photosensitive resist film by the exposure apparatus 3.

The wafer W may have a disk shape or a plate shape other than a circle such as a polygon. The wafer W may have a notch portion that is partially notched. The notch portion may be, for example, a notch (groove of U-shape, V-shape, etc.) or a straight portion (so-called orientation flat) extending linearly. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the wafer W may be, for example, about 200 mm to 450 mm.

As shown in FIGS. 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

As shown in FIGS. 1 and 3, the carrier block 4 has a carrier station 12 and a loading / unloading section 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 houses at least one wafer W in a sealed state. An opening / closing door (not shown) for loading / unloading the wafer W is provided on the side surface 11a of the carrier 11. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading portion 13 side.

The carry-in / carry-out unit 13 is located between the carrier station 12 and the processing block 5. The carry-in / carry-out unit 13 has a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing door of the carrier 11 is in a state of facing the opening / closing door 13a. By opening the opening / closing door 13a and the opening / closing door of the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / carry-out portion 13 communicate with each other. The carry-in / carry-out unit 13 has a built-in delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and passes it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

The processing block 5 has unit processing blocks 14 to 17 as shown in FIGS. 1 and 2. The unit processing blocks 14 to 17 are arranged in the order of the unit processing block 17, the unit processing block 14, the unit processing block 15, and the unit processing block 16 from the floor surface side. As shown in FIG. 3, the unit processing blocks 14 to 17 include a liquid processing unit U1 (board processing apparatus) and a heat treatment unit U2.

The liquid treatment unit U1 is configured to supply various treatment liquids or gases to the front surface Wa or the back surface Wb (see FIG. 4) of the wafer W. The heat treatment unit U2 is configured to heat the wafer W with, for example, a hot plate, and cool the heated wafer W with, for example, a cooling plate to perform heat treatment.

The unit processing block 14 is a lower layer film forming block (BCT block) configured to form an lower layer film on the surface Wa of the wafer W. The unit processing block 14 incorporates a transfer arm A2 for transporting the wafer W in each of the units U1 and U2 (see FIG. 2). The liquid treatment unit U1 of the unit treatment block 14 applies a coating liquid (treatment liquid) for forming an underlayer film to the surface Wa of the wafer W to form a coating film. The heat treatment unit U2 of the unit processing block 14 performs various heat treatments accompanying the formation of the underlayer film. Specific examples of the heat treatment include heat treatment for curing the coating film to form an underlayer film. Examples of the underlayer film include an antireflection (SiARC) film.

The unit processing block 15 is an intermediate film (hard mask) forming block (HMCT block) configured to form an intermediate film on the lower layer film. The unit processing block 15 has a built-in transfer arm A3 that conveys the wafer W to each of the units U1 and U2 (see FIG. 2). The liquid treatment unit U1 of the unit treatment block 15 applies a coating liquid (treatment liquid) for forming an intermediate film on the lower film to form a coating film. The heat treatment unit U2 of the unit processing block 15 performs various heat treatments accompanying the formation of the interlayer film. Specific examples of the heat treatment include heat treatment for curing the coating film to form an intermediate film. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film.

The unit processing block 16 is a resist film forming block (COT block) configured to form a thermosetting resist film on the intermediate film. The unit processing block 16 incorporates a transfer arm A4 for transporting the wafer W in each of the units U1 and U2 (see FIG. 2). The liquid treatment unit U1 of the unit treatment block 16 coats a coating liquid (treatment liquid) for forming a resist film on an intermediate film to form a coating film. The heat treatment unit U2 of the unit processing block 16 performs various heat treatments accompanying the formation of the resist film. Specific examples of the heat treatment include heat treatment (PAB: Pre Applied Bake) for curing the coating film to form a resist film. The resist film includes a photosensitive resist film and a non-photosensitive resist film.

The unit processing block 17 is a developing processing block (DEV block) configured to develop the exposed resist film. The unit processing block 17 incorporates a transfer arm A5 that conveys the wafer W to each of the units U1 and U2, and a direct transfer arm A6 that conveys the wafer W without passing through these units (see FIG. 2). The liquid treatment unit U1 of the unit processing block 17 supplies a developing solution (treatment liquid) to the resist film after exposure to develop the resist film. The liquid treatment unit U1 of the unit treatment block 17 supplies a cleaning liquid (rinse liquid) to the developed resist film to wash away the dissolved components of the resist film together with the developing liquid. Examples of the cleaning liquid include pure water (DIW: deionized water). As a result, the resist film is partially removed and a resist pattern is formed. The heat treatment unit U2 of the unit processing block 16 performs various heat treatments associated with the development process. Specific examples of the heat treatment include heat treatment (PEB: Post Exposure Bake) before development treatment, heat treatment (PB: Post Bake) after development treatment, and the like.

As shown in FIGS. 2 and 3, a shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is provided from the floor surface to the unit processing block 15, and is divided into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The elevating arm A7 elevates the wafer W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is provided from the floor surface to the upper part of the unit processing block 17, and is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 has a built-in transfer arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11, pass it to the exposure apparatus 3, receive the wafer W from the exposure apparatus 3, and return it to the shelf unit U11.

The controller 10 controls the substrate processing system 1 partially or entirely. The controller 10 can send and receive signals to and from the controller of the exposure apparatus 3, and the substrate processing system 1 and the exposure apparatus 3 are controlled by the cooperation of each controller. Details of the controller 10 will be described later.

[Configuration of liquid treatment unit]
Subsequently, the liquid treatment unit U1 will be described in more detail with reference to FIGS. 4 and 5. Here, as an example, the liquid processing unit U1 in the unit processing block 17 will be described. As shown in FIG. 4, the liquid processing unit U1 includes a rotation holding unit 20, a cup 30, a processing liquid supply unit 40 (first supply unit), and a gas-liquid supply unit 50 (first supply unit). A cleaning liquid supply unit 60 (second supply unit), an exhaust unit 70, and a blower B are provided.

The rotation holding portion 20 has a rotating portion 21, a shaft 22, and a holding portion 23 (chuck). The rotating unit 21 operates based on an operation signal from the controller 10 to rotate the shaft 22. The rotating unit 21 is a power source such as an electric motor. The holding portion 23 is provided at the tip end portion of the shaft 22. The wafer W is arranged on the holding portion 23. The holding portion 23 is a suction chuck configured to hold the wafer W substantially horizontally by, for example, suction or the like. That is, the rotation holding unit 20 rotates the wafer W around an axis (rotation axis) perpendicular to the surface Wa of the wafer W in a state where the posture of the wafer W is substantially horizontal. In the present embodiment, the rotation axis passes through the center of the wafer W having a circular shape, and is therefore also the center axis. In the present embodiment, as shown in FIG. 4, the rotation holding unit 20 rotates the wafer W clockwise at a predetermined rotation speed when viewed from above. The rotation speed of the wafer W may be, for example, about 10 rpm to 2000 rpm.

The cup 30 is provided around the rotation holding portion 20. The cup 30 functions as a liquid collecting container that receives the liquid supplied to the wafer W for processing the wafer W and the liquid discharged into the cup 30 by the dummy dispense. The cup 30 may be made of, for example, polypropylene (PP: polypropylene), polyvinyl chloride (PVC), polyphenylene sulfide (PPS: Poly Phenylene Sulfide) resin or the like. The cup 30 has a bottom wall 31, an outer peripheral wall 32, an inner peripheral wall 33, a partition wall 34, a drainage pipe 35, an exhaust pipe 36, a slanted wall 37 (inner wall portion), and a partition wall 38. ..

The bottom wall 31 has an annular shape that surrounds the rotation holding portion 20. The outer peripheral wall 32 has a cylindrical shape that surrounds the wafer W held by the rotation holding portion 20 and the inner peripheral wall 33. The outer peripheral wall 32 extends vertically upward from the outer peripheral edge of the bottom wall 31. The outer peripheral wall 32 is located outside the peripheral edge of the wafer W held by the rotation holding portion 20. Therefore, the outer peripheral wall 32 has a function of preventing the liquid that has been shaken off from the wafer W that is rotated while being held by the rotation holding portion 20 from being scattered. The portion of the outer peripheral wall 32 on the upper end 32a side is an inclined wall 32b that inclines inward (rotation holding portion 20 side) as it goes upward.

A liquid receiving portion 39 projecting outward from the outer peripheral surface is provided on the outer peripheral surface of the outer peripheral wall 32. The liquid receiving portion 39 functions as a liquid collecting container for receiving the liquid together with the outer peripheral surface of the outer peripheral wall 32. A through hole 32c that communicates inside and outside the cup 30 is provided on the lower end side of the liquid receiving portion 39 and on the outer peripheral surface of the outer peripheral wall 32. The liquid received by the liquid receiving unit 39 flows into the cup 30 through the through hole 32c.

The inner peripheral wall 33 has a cylindrical shape that surrounds the rotation holding portion 20. The inner peripheral wall 33 extends vertically upward from the inner peripheral edge of the bottom wall 31. The inner peripheral wall 33 is located inside the peripheral edge of the wafer W held by the rotation holding portion 20. The upper end of the inner peripheral wall 33 is closed by a partition wall 38. A through hole is provided in the central portion of the partition wall 38, and the shaft 22 is inserted into the through hole.

The partition wall 34 has a cylindrical shape. The partition wall 34 extends vertically upward from between the outer peripheral wall 32 and the inner peripheral wall 33 of the bottom wall 31. That is, the partition wall 34 surrounds the inner peripheral wall 33.

The drainage pipe 35 is connected to a liquid drainage hole 31a formed between the outer peripheral wall 32 and the partition wall 34 of the bottom wall 31. The exhaust pipe 36 is connected to a gas discharge hole 31b formed in a portion of the bottom wall 31 between the partition wall 34 and the inner peripheral wall 33.

The inclined wall 37 is attached to the upper end portion of the inner peripheral wall 33 so as to project outward from the partition wall 34. The inclined wall 37 has an umbrella shape (mountain shape) protruding upward. That is, the inclined wall 37 includes an inclined surface S that inclines downward as it goes outward in the radial direction of the rotation axis of the rotation holding portion 20. The inclined surface S faces the peripheral edge portion of the wafer W held by the rotation holding portion 20. Therefore, the liquid that has been shaken off from the wafer W to the outside flows through the inclined surface S, is guided between the outer peripheral wall 32 and the partition wall 34, and is discharged through the liquid discharge hole 31a and the drainage pipe 35.

The treatment liquid supply unit 40 is configured to supply the treatment liquid L1 to the surface Wa of the wafer W. The treatment liquid L1 may be, for example, a developing liquid. The processing liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, an arm 44 (first arm), a pipe 45, a drive mechanism 46 (first drive unit), and a nozzle N1 (processing). It has a liquid nozzle and an upper nozzle).

The liquid source 41 functions as a supply source of the treatment liquid L1. The pump 42 operates based on the operation signal from the controller 10, sucks the processing liquid L1 from the liquid source 41, and sends it to the nozzle N1 via the pipe 45 and the valve 43. The valve 43 operates based on an operation signal from the controller 10, and opens and closes the pipe 45 before and after the valve 43.

The arm 44 is provided with a nozzle N1 and a drive mechanism 46. As shown in FIG. 5, the arm 44 may be provided with a plurality of nozzles N1 having different discharge flow rates, discharge directions, and the like. The pipe 45 connects the liquid source 41, the pump 42, the valve 43, and the nozzle N1 in this order from the upstream side. The drive mechanism 46 operates based on an operation signal from the controller 10 to move the arm 44 in the horizontal direction and the vertical direction. The drive mechanism 46 is, for example, a servomotor with an encoder, and may control the moving speed and moving position of the arm 44.

The nozzle N1 can be moved by the drive mechanism 46 between the upper part of the wafer W and the upper part of the liquid receiving portion 39 so that the ejection port faces the surface Wa of the wafer W or the liquid receiving portion 39. The nozzle N1 can discharge the processing liquid L1 delivered from the pump 42 downward.

The gas-liquid supply unit 50 is configured to supply the cleaning liquid L2 and the dry gas G to the surface Wa of the wafer W. The cleaning liquid L2 may be, for example, pure water. The dry gas G may be various inert gases, for example, nitrogen gas (N ₂ gas). The gas-liquid supply unit 50 includes a liquid source 51A, a gas source 51B, pumps 52A and 52B, valves 53A and 53B, arms 54 (second arm), pipes 55A and 55B, and a drive mechanism 56 (third). 2 driving unit) and nozzle N2 (upper nozzle).

The liquid source 51A functions as a supply source of the cleaning liquid L2. The gas source 51B functions as a supply source of the dry gas G. The pump 52A operates based on the operation signal from the controller 10, sucks the cleaning liquid L2 from the liquid source 51A, and sends it to the nozzle N2 via the pipe 55A and the valve 53A. The pump 52B operates based on the operation signal from the controller 10, sucks the dry gas G from the gas source 51B, and sends it to the nozzle N2 via the pipe 55B and the valve 53B. The valve 53A operates based on an operation signal from the controller 10, and opens and closes the pipe 55A before and after the valve 53A. The valve 53B operates based on an operation signal from the controller 10, and opens and closes the pipe 55B before and after the valve 53B.

A nozzle N2 and a drive mechanism 56 are attached to the arm 54. As shown in FIG. 5, the arm 54 may be provided with a plurality of nozzles N2a (cleaning liquid nozzles) for discharging the cleaning liquid L2 and nozzles N2b (gas nozzles) for discharging the drying gas G. The plurality of nozzles N2a may have different discharge flow rates, discharge directions, and the like.

The pipe 55A connects the liquid source 51A, the pump 52A, the valve 53A, and the nozzle N2a in this order from the upstream side. The pipe 55B connects the gas source 51B, the pump 52B, the valve 53B, and the nozzle N2b in this order from the upstream side. The drive mechanism 56 operates based on the operation signal from the controller 10 and moves the arm 54 in the horizontal direction and the vertical direction. The drive mechanism 56 is, for example, a servomotor with an encoder, and may control the moving speed and moving position of the arm 54.

The nozzles N2a and N2b can be moved by the drive mechanism 56 between the upper part of the wafer W and the upper part of the liquid receiving portion 39 so that the ejection port faces the surface Wa of the wafer W or the liquid receiving portion 39. The nozzle N2a can discharge the cleaning liquid L2 delivered from the pump 52A downward. The nozzle N2b can discharge the dry gas G sent out from the pump 52B downward.

The cleaning liquid supply unit 60 is configured to supply the cleaning liquid L3 to the back surface Wb of the wafer W. The cleaning liquid L3 may be, for example, pure water. The cleaning liquid supply unit 60 includes a liquid source 61, a pump 62, a valve 63, a pipe 65, and a nozzle N3 (cleaning liquid nozzle, lower nozzle).

The liquid source 61 functions as a supply source of the cleaning liquid L3. The pump 62 operates based on the operation signal from the controller 10, sucks the cleaning liquid L3 from the liquid source 61, and sends it to the nozzle N3 via the pipe 65 and the valve 63. The valve 63 operates based on an operation signal from the controller 10, and opens and closes the pipe 65 before and after the valve 63.

The pipe 65 connects the liquid source 61, the pump 62, the valve 63, and the nozzle N3 in this order from the upstream side. The nozzle N3 is arranged so that the discharge port faces the peripheral edge of the back surface Wb of the wafer W. The nozzle N3 can discharge the cleaning liquid L3 sent out from the pump 62 diagonally upward.

The exhaust unit 70 is configured to exhaust the inside of the liquid processing unit U1 or the inside of the cup 30. The exhaust unit 70 includes an intake port 71, a pump 72, valves 73A and 73B, and pipes 75A to 75C. The intake port 71 is located in the liquid treatment unit U1 and sucks the gas in the liquid treatment unit U1.

The pump 72 operates based on an operation signal from the controller 10 and sucks gas through the pipe 75C. The valve 73A operates based on an operation signal from the controller 10, and opens and closes the pipe 75A before and after the valve 73A. The valve 73B operates based on an operation signal from the controller 10, and opens and closes the pipe 75B before and after the valve 73B.

The pipe 75A is connected to the intake port 71. The pipe 75B is connected to the exhaust pipe 36 of the cup 30. The pipe 75C is connected to the pipes 75A and 75B and extends to the outside of the liquid treatment unit U1. Therefore, when the pump 72 operates when the valve 73A is in the open state and the valve 73B is in the closed state, the liquid processing unit U1 is exhausted. Specifically, the gas in the liquid treatment unit U1 is sucked from the intake port 71 and discharged to the outside of the liquid treatment unit U1 through the pipes 75A and 75C. On the other hand, when the pump 72 operates when the valve 73A is closed and the valve 73B is open, the inside of the cup 30 is exhausted. Specifically, the gas of the cup 30 flows into the exhaust pipe 36 from between the inclined wall 37 and the partition wall 34, and is discharged to the outside of the liquid treatment unit U1 through the pipes 75B and 75C.

The blower B is arranged above in the liquid treatment unit U1. The blower B operates based on the operation signal from the controller 10 and forms a downflow toward the cup 30.

[Controller configuration]
As shown in FIG. 6, the controller 10 has a reading unit M1, a storage unit M2, a processing unit M3, and an indicating unit M4 as functional modules. These functional modules merely divide the functions of the controller 10 into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller 10 is divided into such modules. Each functional module is not limited to that realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the same. You may.

The reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk.

The storage unit M2 stores various data. The storage unit M2 is input from the operator via, for example, a program read from the recording medium RM by the reading unit M1, various data when processing the wafer W (so-called processing recipe), and an external input device (not shown). Stores setting data, etc.

The processing unit M3 processes various data. The processing unit M3 is, for example, based on various data stored in the storage unit M2, the liquid processing unit U1 (for example, rotation holding unit 20, pumps 42, 52A, 52B, 62, 72, valves 43, 53A, 53B). , 63, 73A, 73B, drive mechanisms 46, 56, blower B, etc.) and an operation signal for operating the heat treatment unit U2.

The instruction unit M4 transmits the operation signal generated by the processing unit M3 to various devices.

The hardware of the controller 10 is composed of, for example, one or a plurality of control computers. The controller 10 has, for example, the circuit 10A shown in FIG. 7 as a hardware configuration. The circuit 10A may be composed of an electric circuit element (circuitry). Specifically, the circuit 10A includes a processor 10B, a memory 10C (storage unit), a storage 10D (storage unit), a driver 10E, and an input / output port 10F. The processor 10B constitutes each of the above-mentioned functional modules by executing a program in cooperation with at least one of the memory 10C and the storage 10D and executing input / output of a signal via the input / output port 10F. The memory 10C and the storage 10D function as a storage unit M2. The driver 10E is a circuit for driving various devices of the substrate processing system 1. The input / output ports 10F are the driver 10E and various devices of the board processing system 1 (for example, rotation holding unit 20, pumps 42, 52A, 52B, 62, 72, valves 43, 53A, 53B, 63, 73A, 73B, drive mechanism). Signals are input and output to and from 46, 56, blower B, etc.).

In the present embodiment, the substrate processing system 1 includes one controller 10, but may include a controller group (control unit) composed of a plurality of controllers 10. When the board processing system 1 includes a controller group, each of the above functional modules may be realized by one controller 10, or may be realized by a combination of two or more controllers 10. .. When the controller 10 is composed of a plurality of computers (circuit 10A), each of the above functional modules may be realized by one computer (circuit 10A), or two or more computers (circuit 10A). ) May be realized. The controller 10 may have a plurality of processors 10B. In this case, each of the above functional modules may be realized by one processor 10B, or may be realized by a combination of two or more processors 10B.

[Dummy dispense method]
Subsequently, a method of dummy dispensing from the nozzles N1 and N2 will be described with reference to FIGS. 4, 5, 8 and 9. In the initial state of the dummy dispense process, the wafer W is not held by the rotation holding portion 20, and the nozzles N1 and N2 stand by above the liquid receiving portion 39 (see FIG. 9). That is, the upper part of the liquid receiving unit 39 functions as a standby position where the nozzles N1 and N2 stand by when the liquid or gas is not discharged from the nozzles N1 and N2.

Subsequently, from the initial state, the controller 10 controls the blower B, the valve 73B, and the pump 72 to operate the blower B and exhaust the inside of the cup 30 (see step S10 in FIG. 8). As a result, a down blow (downward flow) is generated in the liquid treatment unit U1, and the state in which the gas in the liquid treatment unit U1 is discharged to the outside of the liquid treatment unit U1 through the cup 30 and the exhaust pipe 36 is continued.

Subsequently, the controller 10 controls the drive mechanism 46 to move the nozzle N1 from the standby position to the inner region R (see FIG. 4) between the outer peripheral wall 32 and the rotation holding portion 20 (first process; First step; see step S11 in FIG. 8). In the present embodiment, the nozzle N1 is moved above the inclined surface S. Specifically, as shown in FIG. 5, the nozzle N1 is shown in the region R1 (indicated by a diagonal line rising to the right in FIG. 5) on the standby position side (liquid receiving portion 39 side) of the inclined surface S with respect to the rotation holding portion 20. Area; 1st area).

Subsequently, the controller 10 controls the drive mechanism 56 to move the nozzle N2 from the standby position to the inner region R (see FIG. 4) between the outer peripheral wall 32 and the rotation holding portion 20 (second process; Second step; see step S12 in FIG. 8). In the present embodiment, the nozzle N2 is moved above the inclined surface S. Specifically, as shown in FIG. 5, the nozzle N2 is a region R2 (downward to the right in FIG. 5) of the inclined surface S on the side away from the standby position (liquid receiving portion 39) of the rotation holding portion 20. It is located on the shaded area (second area).

Subsequently, the controller 10 controls the pump 42 and the valve 43 to discharge the processing liquid L1 from the nozzle N1 to the region R1 of the inclined surface S (third processing; third step; see step S13 in FIG. 8). ). As a result, the dummy dispense process is performed on the nozzle N1. When a plurality of nozzles N1 are provided on the arm 44, the same or different treatment liquids L1 may be simultaneously discharged from each nozzle N1, or the same or different treatment liquids L1 may be discharged from each nozzle N1. It may be discharged at different timings.

Subsequently, the controller 10 controls the pumps 52A and 52B and the valves 53A and 53B to discharge the cleaning liquid L2 and the drying gas G from the nozzle N2 to the region R2 of the inclined surface S (third process; third step). See step S14 in FIG. 8). As a result, the dummy dispense process is performed on the nozzle N2. When a plurality of nozzles N2a are provided on the arm 54, the same or different types of cleaning liquid L2 may be simultaneously discharged from each nozzle N2a, or the same or different types of cleaning liquid L2 may be discharged from each nozzle N2a at different timings. It may be discharged with. Further, the cleaning liquid L2 and the drying gas G may be discharged from the nozzles N2a and N2b at the same time, or the cleaning liquid L2 and the drying gas G may be discharged at different timings.

Subsequently, the controller 10 controls the drive mechanism 46 to move the nozzle N1 from above the inclined surface S (region R1) to the standby position (see step S15 in FIG. 8). Similarly, the controller 10 controls the drive mechanism 56 to move the nozzle N2 from above the inclined surface S (region R2) to the standby position (see step S16 in FIG. 8).

After that, the controller 10 controls the valves 73A and 73B to open the valves 73A and close the valves 73B (see step S17 in FIG. 8). As a result, the gas in the liquid processing unit U1 is exhausted from the intake port 71. As described above, the dummy dispense process in the nozzles N1 and N2 is completed.

[Action]
In the present embodiment as described above, the controller 10 controls the processing liquid supply unit 40 to cause the processing liquid L1 to be dummy-dispensed from the nozzle N1 to the inner region R. Since the space inside the cup 30 is wider than that of the conventional nozzle bath, even if the treatment liquid L1 is discharged from the nozzle N1 to the inclined surface S of the inclined wall 37 located in the cup 30, it bounces off from the inside of the cup 30. It is difficult for the treatment liquid L1 to reach the upper nozzle. Therefore, defects are less likely to occur in the processed wafer W. Further, in the present embodiment, dummy dispense is performed from the nozzle N1 into the cup 30. Therefore, a nozzle bath for dummy dispensing becomes unnecessary. Therefore, it is possible to reduce the size of the liquid treatment unit U1.

In the present embodiment, there is an inclined wall 37 located between the outer peripheral wall 32 and the rotation holding portion 20 and in the cup 30, and the controller 10 controls the processing liquid supply unit 40 to control the processing liquid from the nozzle N1. L1 is dummyly dispensed on the inclined wall 37. Therefore, the treatment liquid L1 is surely discharged into the cup 30 from the nozzle N1. Therefore, it is possible to further suppress the liquid splash to the nozzle N1.

In the present embodiment, the controller 10 controls the processing liquid supply unit 40 to cause the processing liquid L1 to be dummy-dispensed from the nozzle N1 to the inclined surface S in the inner region R in particular. Therefore, it is difficult for the treatment liquid L1 that bounces off the inclined surface S toward the nozzle N1. Therefore, it is possible to further suppress the liquid splash to the nozzle N1.

In the present embodiment, the liquid receiving portion 39 is provided on the outer peripheral surface of the cup 30, and the nozzles N1 and N2 can stand by above the liquid receiving portion 39. Therefore, in the standby state in which the nozzles N1 and N2 do not discharge the treatment liquid L1 or the cleaning liquid L2 into the cup 30, the nozzles N1 and N2 stand by at the standby position above the liquid receiving portion 39. Therefore, even if the treatment liquid L1 or the cleaning liquid L2 drips from the nozzles N1 and N2 in the standby state, the dropped liquid is received by the liquid receiving unit 39, so that the external contamination of the cup 30 by the treatment liquid L1 or the cleaning liquid L2 is suppressed. It becomes possible. Further, since a part of the liquid receiving portion 39 is formed of the outer peripheral surface of the cup 30, the liquid receiving portion 39 itself can be miniaturized. Therefore, it is possible to further reduce the size of the liquid treatment unit U1.

In the present embodiment, dummy discharge from nozzles N1 and N2 is performed in a state where the inside of the cup 30 is exhausted. Therefore, even when the treatment liquid L1 and the cleaning liquid L2 discharged from the nozzles N1 and N2 collide with an object in the cup 30 and change into a mist, the mist is exhausted from the cup 30. Therefore, since the mist does not spread to the surroundings, it is possible to suppress the adhesion of the mist to the nozzles N1 and N2. As a result, the mist aggregates on the surfaces of the nozzles N1 and N2 to form droplets, and the droplets are suppressed from falling onto the wafer W during the processing of the wafer W, so that the processed wafer W is less likely to have defects. Become.

In the present embodiment, the nozzle N1 and the nozzle N2 are positioned so as to face each other with the rotation holding portion 20 facing each other during the dummy discharge from the nozzles N1 and N2. Therefore, the bounced liquids are less likely to adhere to each other. Therefore, it is possible to perform dummy dispense from both nozzles N1 and N2 at the same time while suppressing liquid splashing on both nozzles N1 and N2. Therefore, the processing time of the dummy dispense is shortened, and the throughput can be improved.

In the present embodiment, the dummy discharge of the treatment liquid L1 from the nozzle N1 is performed on the region R1 of the inclined surface S. Therefore, the nozzle N1 does not exceed the rotation holding portion 20 during the dummy dispense process in the nozzle N1. Therefore, even if the treatment liquid L1 drips from the nozzle N1 while the nozzle N1 is moving, the treatment liquid L1 is less likely to adhere to the rotation holding portion 20 (holding portion 23). As a result, it is possible to suppress contamination of the rotary holding portion 20 (holding portion 23) by the treatment liquid L1.

[Other Embodiments]
Although the embodiments according to the present disclosure have been described in detail above, various modifications may be added to the above embodiments within the scope of the gist of the present invention.

(Modification example 1)
For example, the holding portion 23 of the rotation holding portion 20 may be cleaned by using the dry gas G discharged from the nozzle N2. This modification 1 will be specifically described with reference to FIGS. 10 and 11. First, in the same manner as in step S10 described above, the inside of the cup 30 is exhausted in the initial state (see step S20 in FIG. 10).

Subsequently, the controller 10 controls the drive mechanism 56 to move the nozzle N2 so that the discharge port of the nozzle N2 is located above the central portion of the holding portion 23 (see steps S21 and 11 in FIG. 10). .. Subsequently, the controller 10 controls the rotation holding unit 20 to rotate the holding unit 23 by the rotating unit 21 (see steps S22 and 11 in FIG. 10).

Subsequently, with the holding portion 23 rotating, the controller 10 controls the pump 52B and the valve 53B to supply the dry gas G from the nozzle N2b to the central portion of the holding portion 23 (fourth process; Fourth step; see step S23 and FIG. 11 in FIG. 10). Further, the controller 10 controls the drive mechanism 56 to move the nozzle N2 toward the outside (peripheral side of the holding portion 23) in the radial direction of the central axis of the rotation holding portion 20 (see the same).

When the nozzle N2 reaches the peripheral edge of the holding portion 23, the controller 10 controls the pump 52B and the valve 53B to stop the discharge of the dry gas G from the nozzle N2b (see step S24 in FIG. 10). Further, the controller 10 controls the rotation holding unit 20 to stop the rotation of the holding unit 23 (see the same).

Subsequently, in the same manner as in steps S16 and S17 described above, the nozzle N2 is moved to the standby position (see step S25 in FIG. 10), and the gas in the liquid treatment unit U1 is exhausted (see step S26 in FIG. 10).

According to the above-described modification 1, the drying gas G is supplied from the nozzle N2b to the rotating holding portion 23. Therefore, foreign matter such as particles adhering to the holding portion 23 is removed. In particular, in the central portion of the holding portion 23, since centrifugal force is unlikely to act on the foreign matter even if the holding portion 23 rotates, the foreign matter is effectively removed by spraying the dry gas G onto the holding portion 23. Therefore, the suction force of the wafer W by the holding portion 23 is maintained. In this way, since the cleaning of the holding portion 23 is mechanically completed by the nozzle N2b without manpower, the cleaning process can be automated and shortened.

(Modification 2)
For example, the holding portion 23 of the rotation holding portion 20 may be cleaned by using the drying gas G and the cleaning liquid L2 discharged from the nozzle N2. This form will be specifically described with reference to FIGS. 12 and 13. First, the same processing as in steps S20 to S22 described above is performed. Specifically, the inside of the cup 30 is exhausted in the initial state (see step S30 in FIG. 12). Next, the nozzle N2 is moved so that the discharge port of the nozzle N2 is located above the central portion of the holding portion 23 (see step S31 and FIG. 13A in FIG. 12). Next, the holding portion 23 is rotated (see step S32 and FIG. 13A in FIG. 12).

Subsequently, with the holding unit 23 rotating, the controller 10 controls the pump 52B and the valve 53B to supply the dry gas G from the nozzle N2b to the central portion of the holding unit 23 (fourth process; Fourth step; see step S33 and FIG. 13 (a) in FIG. Further, the controller 10 controls the drive mechanism 56 to move the nozzle N2 toward the outside (peripheral side of the holding portion 23) in the radial direction of the central axis of the rotation holding portion 20 (see the same). At this time, the nozzle N2 moves in the first section between the central axis of the rotation holding portion 20 and the first point separated by a predetermined distance from the central axis. The first point may be outside the suction hole (not shown) provided in the central portion of the holding portion 23 for sucking the wafer W by the holding portion 23. That is, the first point may be, for example, a point about 5 mm outside the suction hole or a point about 15 mm from the central axis.

When the nozzle N2 reaches the first point, the controller 10 controls the pump 52A and the valve 53A while the dry gas G is still being discharged from the nozzle N2b, and holds the cleaning liquid L2 from the nozzle N2a in the middle of the holding portion. Supply to the region (between the central portion and the peripheral portion) (fourth process; fourth step; see step S34 and FIG. 13B in FIG. 12). At this time, the nozzle N2 moves in a second section between the first point and the second point further away from the central axis of the rotation holding portion 20 than the second point. The second point is located inside the peripheral edge of the holding portion 23. The second point may be, for example, a point about 10 mm inward from the peripheral edge of the holding portion 23, or a point about 55 mm from the central axis.

When the nozzle N2 reaches the second point, the controller 10 controls the pump 52A and the valve 53A to stop the discharge of the cleaning liquid L2 from the nozzle N2a while the dry gas G is still being discharged from the nozzle N2b. (Fourth process; fourth step; see step S35 and FIG. 13 (c) in FIG. 12). At this time, the nozzle N2 moves in a third section between the second point and the peripheral edge of the holding portion 23.

Subsequently, similarly to steps S24 to S26 described above, the discharge of the dry gas G from the nozzle N2b is stopped, the rotation of the holding portion 23 is stopped (see step S36 in FIG. 12), and the nozzle N2 is moved to the standby position. After that (see step S37 in FIG. 12), the gas in the liquid treatment unit U1 is exhausted (see step S38 in FIG. 12).

According to the modified example 2 described above, the same effect as that of the modified example 1 is obtained. Further, according to the second modification, since not only the dry gas G but also the cleaning liquid L2 is supplied to the holding portion 23, the holding portion 23 can be further cleaned. Further, since the cleaning liquid L2 is not supplied to the central portion of the holding portion 23, it becomes difficult for the cleaning liquid L2 to enter the suction hole located at the central portion of the holding portion 23. Therefore, it is possible to suppress a decrease in the adsorption capacity of the wafer W by the holding portion 23. Further, since the dry gas G is supplied from the nozzle N2b to the peripheral edge of the holding portion 23, but the cleaning liquid L2 is not supplied from the nozzle N2a, the cleaning liquid L2 spread to the peripheral edge of the holding portion 23 by centrifugal force is the dry gas. Blowed away by G. Therefore, it is suppressed that the cleaning liquid L2 remains in the holding portion 23. Therefore, it is possible to suppress contamination of the holding portion 23 by the cleaning liquid L2 while cleaning the holding portion 23 with the cleaning liquid L2 and the drying gas G. If the nozzle N2b is located behind the nozzle N2a in the traveling direction of the arm 54, the drying gas G discharged from the nozzle N2b always blows the cleaning liquid L2 discharged from the nozzle N2a outward. , The cleaning liquid L2 is less likely to remain on the surface of the holding portion 23.

(Modification 3)
For example, as shown in FIG. 14, the arms 44 and 54 may be cleaned by using the nozzle N3 that supplies the cleaning liquid L3 to the back surface Wb of the wafer W (fifth process; fifth step). .. That is, first, the controller 10 controls the pump 62 and the valve 63 to discharge the cleaning liquid L3 from the nozzle N3. In this state, the controller 10 further controls the drive mechanism 46 or the drive mechanism 56 to move the arms 44 and 54 so that the lower surfaces of the arms 44 and 54 come into contact with the cleaning liquid L3 discharged from the nozzle N3. In this case, even if the treatment liquid L1 discharged from the nozzle N1 collides with the inclined surface S and bounces off and adheres to the lower surfaces of the arms 44 and 54, the cleaning liquid L3 supplied from the nozzle N3 to the arms 44 and 54 makes the arm 44 , 54, the treatment liquid L1 is removed. Therefore, it is possible to prevent the processing liquid L1 from falling from the arms 44 and 54 onto the wafer W during the processing of the wafer W. Therefore, defects are less likely to occur in the processed wafer W. The lower surfaces of the arms 44 and 54 may be inclined. In this case, the cleaning liquid L3 easily flows from the lower surfaces of the arms 44 and 54, and the cleaning liquid L3 is less likely to remain on the arms 44 and 54.

As shown in FIG. 14, when cleaning the lower surfaces of the arms 44 and 54 with the cleaning liquid L3 discharged from the nozzle N3, the dry gas G may be discharged from the nozzle N2 (sixth process; sixth process). Process). Specifically, in a state where the airflow curtain is formed outside the rotation holding portion 20 (holding portion 23) by the dry gas G discharged from the nozzle N2, the outside of the rotation holding portion 20 (holding portion 23). When cleaning the lower surfaces of the arms 44 and 54 with the cleaning liquid L3 from the nozzle N3, the drying gas G is discharged from the nozzle N2, and the cleaning liquid L3 is on the rotation holding portion 20 side of the position where the cleaning liquid L3 is supplied to the arms 44 and 54. An air stream of dry gas G may be formed. In this case, the airflow of the dry gas G from the nozzle N2 is formed on the rotation holding portion 20 (holding portion 23) side of the position where the cleaning liquid L3 is supplied to the arms 44 and 54 continuously or at a predetermined timing. To. Therefore, even if the cleaning liquid L3 discharged from the nozzle N3 collides with the arms 44 and 54 and bounces or becomes mist-like, the bounced cleaning liquid L3 or mist-like cleaning liquid L3 may flow to the rotation holding portion 20 side. It is suppressed by the dry gas G. Therefore, the cleaning liquid L3 or its mist is less likely to adhere to the substrate support surface of the holding portion 23. As a result, it is possible to suppress contamination of the wafer W by the cleaning liquid L3 or its mist.

In the cleaning process of the arms 44 and 54 in the third modification, the cleaning liquid L3 discharged from the nozzle N3 is supplied to the arms 44 and 54 outside the rotation holding portion 20 in the radial direction of the rotation shaft of the rotation holding portion 20. The position of the nozzle N3 itself is not particularly limited, and the nozzle N3 can be arranged at any position. Further, in the cleaning process of the arms 44 and 54 in the modified example 3, the airflow of the dry gas G from the nozzle N2 is closer to the rotation holding portion 20 (holding portion 23) than the position where the cleaning liquid L3 is supplied to the arms 44 and 54. The position of the nozzle N2 itself is not particularly limited as long as it is formed in, and the nozzle N2 can be arranged at an arbitrary position.

The cleaning process of the arms 44 and 54 in the third modification may be performed before, after, or during the dummy discharge process, or may be performed independently without being related to the dummy discharge process.

(Modification example 4)
At the time of dummy dispense, the discharge ports of the nozzles N1 and N2 may be located inside the cup 30 or may be located outside the cup 30. That is, at the time of dummy dispense, the height of the discharge ports of the nozzles N1 and N2 from the inclined surface S may be lower than the upper end 32a or higher than the upper end 32a. When the discharge ports of the nozzles N1 and N2 are located inside the cup 30, the momentum of the liquid discharged from the nozzles N1 and N2 colliding with the object in the cup 30 is weakened. Therefore, since the liquid is unlikely to change into a mist, it is possible to suppress the scattering of the mist around the mist. Further, even if the liquid discharged from the nozzles N1 and N2 rebounds on the inclined surface S, the rebound liquid is less likely to scatter to the outside of the cup 30. In particular, when the discharge ports of the nozzles N1 and N2 are located below the substrate support surface of the holding portion 23 of the rotation holding portion 20, the generated mist is less likely to adhere to the substrate supporting surface of the holding portion 23. Therefore, it is possible to suppress the contamination of the wafer W by the mist. On the other hand, when the discharge ports of the nozzles N1 and N2 are located outside the cup 30, even if the liquid discharged from the nozzles N1 and N2 rebounds on the inclined surface S, the rebound liquid adheres to the nozzles N1 and N2. It becomes difficult.

(Modification 5)
At least the regions R1 and R2 of the inclined surface S may be surface-treated to reduce the contact angle of the liquid. In this case, if the contact angle of the liquid in these regions R1 and R2 is small, the liquid splashing is less likely to occur when the liquid from the nozzles N1 and N2 collides with the regions R1 and R2 during dummy dispensing. Examples of the surface treatment include blast treatment. Alternatively, instead of the surface treatment, at least the regions R1 and R2 of the inclined surface S may be dimple-processed, or a plurality of grooves extending in the radial direction of the central axis of the rotation holding portion 20 are formed. May be.

(Modification 6)
The inclined wall 37 may be separate from the other walls 31 to 34 as in the above embodiment, or may be integrated with any of the walls 31 to 34 constituting the cup 30.

(Modification 7)
The dummy discharge from the nozzles N1 and N2 may be performed on a member other than the inclined wall 37 as long as it is located in the cup 30 between the rotation holding portion 20 and the outer peripheral wall 32.

(Modification 8)
The position of the dummy dispense by the nozzle N1 may be the region R2, and the position of the dummy dispense by the nozzle N2 may be the region R1. Alternatively, the position of the dummy dispense by the nozzles N1 and N2 is not limited to the regions R1 and R2, and may be the inner region R.

1 ... Board processing system (board processing device), 2 ... Coating and developing device (board processing device), 10 ... Controller (control unit), 20 ... Rotation holding unit, 23 ... Holding unit (chuck), 30 ... Cup, 32 ... Outer wall, 32a ... upper end, 37 ... inclined wall (inner wall part), 40 ... treatment liquid supply part (first supply part), 44 ... arm (first arm), 46 ... drive mechanism (first drive part) ), 50 ... Gas / liquid supply unit (first supply unit), 54 ... Arm (second arm), 56 ... Drive mechanism (second drive unit), 60 ... Cleaning liquid supply unit (second supply unit) , 70 ... Exhaust part, G ... Dry gas, L1 ... Treatment liquid, L2, L3 ... Cleaning liquid, N1 ... Nozzle (treatment liquid nozzle, upper nozzle), N2 ... Nozzle (upper nozzle), N2a ... Nozzle (cleaning liquid nozzle), N2b ... Nozzle (gas nozzle), N3 ... Nozzle (cleaning liquid nozzle, lower nozzle), R ... Inner region, R1 ... Region (first region), R2 ... Region (second region), RM ... Recording medium, S ... Inclined surface, U1 ... Liquid treatment unit (board processing device), W ... Wafer (board), Wa ... Front surface, Wb ... Back surface.

Claims (15)

A rotation holding part that rotates while holding the board,
The first supply section and
A cup that surrounds the substrate held by the rotation holding portion and receives the liquid supplied from the first supply portion.
An exhaust unit configured to exhaust the inside of the cup and
Equipped with a control unit
The cup has an outer peripheral wall that prevents liquid that has been shaken off from the substrate that is rotated while being held by the rotation holding portion.
The first supply unit is
A treatment liquid nozzle that supplies the treatment liquid to the surface of the substrate,
A cleaning liquid nozzle that supplies a cleaning liquid to the surface of the substrate,
A first drive unit for moving the first arm provided with the treatment liquid nozzle, and
It has a second drive unit for moving the second arm provided with the cleaning liquid nozzle.
The control unit controls the first supply unit and the exhaust unit, and exhausts the inside of the cup by the exhaust unit.
By moving the first arm by the first driving unit, the processing liquid nozzle is positioned in a predetermined first region of the inner region between the outer peripheral wall and the rotation holding portion. Processing and
By moving the second arm by the second driving unit, the cleaning liquid nozzle is positioned in the second region on the opposite side of the inner region from the rotation holding portion with the first region. The second process to make
After the first and second treatments, a third treatment of dummy dispensing the treatment liquid and the cleaning liquid from the treatment liquid nozzle and the cleaning liquid nozzle is executed .
The first region is a region of the inner region closer to the standby position where the treatment liquid nozzle and the cleaning liquid nozzle stand by outside the cup than the rotation holding portion.
It said second region, Ru region der on the side apart from the standby position than the spin holder of the inner region, the substrate processing apparatus. A rotation holding part that rotates while holding the board,
The first supply section and
A cup that surrounds the substrate held by the rotation holding portion and receives the liquid supplied from the first supply portion.
A second supply unit configured to supply the cleaning liquid from the lower nozzle located in the cup to the back surface of the substrate.
An exhaust unit configured to exhaust the inside of the cup and
Equipped with a control unit
The cup has an outer peripheral wall that prevents liquid that has been shaken off from the substrate that is rotated while being held by the rotation holding portion.
The first supply unit is
A treatment liquid nozzle that supplies the treatment liquid to the surface of the substrate,
A cleaning liquid nozzle that supplies cleaning liquid to the surface of the substrate,
A first drive unit for moving the first arm provided with the treatment liquid nozzle, and
It has a second drive unit for moving the second arm provided with the cleaning liquid nozzle.
The control unit controls the first supply unit and the exhaust unit, and exhausts the inside of the cup by the exhaust unit.
The first process of moving the first arm by the first drive unit to position the treatment liquid nozzle in the inner region between the outer peripheral wall and the rotation holding portion.
The second process of locating the cleaning liquid nozzle in the inner region by moving the second arm by the second driving unit, and
After the first and second treatments, a third treatment of dummy dispensing the treatment liquid and the cleaning liquid from the treatment liquid nozzle and the cleaning liquid nozzle, respectively.
A substrate processing apparatus that controls the first and second supply units to perform a fourth process of supplying a cleaning liquid from the lower nozzle to the first or second arm. The control unit
In the first processing, by moving the first arm by the first driving unit, the processing liquid nozzle is positioned in a predetermined first region of the inner region.
In the second process, by moving the second arm by the second driving unit, the cleaning liquid nozzle is placed on the inner region opposite to the first region and the rotation holding portion. The apparatus according to claim 2 , which is located in the second region of the above. The first region is a region of the inner region closer to the standby position where the treatment liquid nozzle and the cleaning liquid nozzle stand by outside the cup than the rotation holding portion.
The device according to claim 3 , wherein the second region is a region of the inner region on the side of the inner region that is distant from the standby position from the rotation holding portion. The first supply unit supplies dry gas to the surface of the substrate and has a gas nozzle provided on the second arm.
The control unit controls the rotation holding unit and the first supply unit so that the gas nozzle passes above the chuck in a state where the chuck of the rotation holding unit is rotated. The apparatus according to any one of claims 1 to 4 , wherein a fifth process of supplying dry gas from the gas nozzle to the chuck while moving the arm by the second drive unit is executed. In the fifth process, the control unit raises the second arm so that the gas nozzle and the cleaning liquid nozzle both move from the central portion to the peripheral portion of the chuck in a state where the chuck is rotated. While moving by the second drive unit
When the gas nozzle and the cleaning liquid nozzle pass above the central portion of the chuck, the drying gas is supplied from the gas nozzle to the central portion of the chuck, but the cleaning liquid is not supplied from the cleaning liquid nozzle.
When the gas nozzle and the cleaning liquid nozzle pass above the intermediate region between the central portion and the peripheral portion of the chuck, the drying gas and the cleaning liquid are applied to the intermediate region of the chuck from the gas nozzle and the cleaning liquid nozzle, respectively. To supply and
When the gas nozzle and the cleaning liquid nozzle pass above the peripheral edge of the chuck, the drying gas is supplied from the gas nozzle to the peripheral edge of the chuck, but the cleaning liquid is not supplied from the cleaning liquid nozzle. The device according to claim 5 . A second supply unit configured to supply the cleaning liquid from the lower nozzle located in the cup to the back surface of the substrate is further provided.
The control unit controls the first and second supply units, discharges the cleaning liquid from the lower nozzle, and supplies the cleaning liquid to the first or second arm outside the rotation holding unit. At the same time, the dry gas is discharged from the gas nozzle to form an air flow of the dry gas on the rotation holding portion side of the position where the cleaning liquid discharged from the lower nozzle is supplied to the first or second arm. The apparatus according to claim 5 or 6 , wherein the sixth process is performed. It is a method of dummy dispensing from the upper nozzle that supplies liquid to the surface of the substrate that is held by the rotation holding part and surrounded by the cup.
The upper nozzle includes a treatment liquid nozzle that supplies a treatment liquid to the surface of the substrate and a cleaning liquid nozzle that supplies the cleaning liquid to the surface of the substrate.
The cup has an outer peripheral wall that prevents liquid that has been shaken off from the substrate that is rotated while being held by the rotation holding portion.
A first arm in which the treatment liquid nozzle is provided is moved to position the treatment liquid nozzle in a predetermined first region of the inner region between the outer peripheral wall and the rotation holding portion. Process and
A second arm provided with the cleaning liquid nozzle is moved to position the cleaning liquid nozzle in a second region of the inner region opposite to the rotation holding portion of the first region. Step 2 and
After the first and second steps, a third step of dummy dispensing the treatment liquid and the cleaning liquid from the treatment liquid nozzle and the cleaning liquid nozzle, respectively, is included.
The first region is a region of the inner region closer to the standby position where the treatment liquid nozzle and the cleaning liquid nozzle stand by outside the cup than the rotation holding portion.
The second region is a region of the inner region on the side of the inner region that is distant from the standby position from the rotation holding portion.
A dummy dispensing method in which the first to third steps are executed while exhausting the inside of the cup . It is a method of dummy dispensing from the upper nozzle that supplies liquid to the surface of the substrate that is held by the rotation holding part and surrounded by the cup.
The upper nozzle includes a treatment liquid nozzle that supplies a treatment liquid to the surface of the substrate and a cleaning liquid nozzle that supplies the cleaning liquid to the surface of the substrate.
The cup has an outer peripheral wall that prevents liquid that has been shaken off from the substrate that is rotated while being held by the rotation holding portion.
A first step of moving the first arm provided with the treatment liquid nozzle to position the treatment liquid nozzle in the inner region between the outer peripheral wall and the rotation holding portion.
A second step of moving the second arm provided with the cleaning liquid nozzle to position the cleaning liquid nozzle in the inner region, and
After the first and second steps, a third step of dummy dispensing the treatment liquid and the cleaning liquid from the treatment liquid nozzle and the cleaning liquid nozzle, respectively.
Including a fourth step of supplying the cleaning liquid from the lower nozzle located in the cup to the first or second arm.
A dummy dispensing method in which the first to third steps are executed while exhausting the inside of the cup. In the first step, the treatment liquid nozzle is positioned in a predetermined first region of the inner region.
The method according to claim 9 , wherein in the second step, the cleaning liquid nozzle is positioned in a second region of the inner region opposite to the first region in between the rotation holding portion. The first region is a region of the inner region closer to the standby position where the treatment liquid nozzle and the cleaning liquid nozzle stand by outside the cup than the rotation holding portion.
The method according to claim 10 , wherein the second region is a region of the inner region on the side of the inner region that is distant from the standby position from the rotation holding portion. In a state where the chuck of the rotation holding portion is rotated, the dry gas is sucked from the gas nozzle while moving the second arm so that the gas nozzle provided on the second arm passes above the chuck. The method according to any one of claims 8 to 11 , further comprising a fifth step of supplying to. In the fifth step, while the chuck is rotated, the second arm is moved so that both the gas nozzle and the cleaning liquid nozzle move from the central portion to the peripheral portion of the chuck.
When the gas nozzle and the cleaning liquid nozzle pass above the central portion of the chuck, the drying gas is supplied from the gas nozzle to the central portion of the chuck, but the cleaning liquid is not supplied from the cleaning liquid nozzle.
When the gas nozzle and the cleaning liquid nozzle pass above the intermediate region between the central portion and the peripheral portion of the chuck, the drying gas and the cleaning liquid are applied to the intermediate region of the chuck from the gas nozzle and the cleaning liquid nozzle, respectively. To supply and
When the gas nozzle and the cleaning liquid nozzle pass above the peripheral edge portion of the chuck, the drying gas is supplied from the gas nozzle to the peripheral edge portion of the chuck, but the cleaning liquid is not supplied from the cleaning liquid nozzle. , The method according to claim 12 . The cleaning liquid is discharged from the lower nozzle located in the cup to supply the cleaning liquid to the first or second arm outside the rotation holding portion, and the dry gas is discharged from the gas nozzle. Claim 12 or 13 further includes a sixth step of forming an air flow of dry gas on the rotation holding portion side of the position where the cleaning liquid discharged from the lower nozzle is supplied to the first or second arm. The method described in. A computer-readable recording medium on which a program for causing a substrate processing apparatus to execute the dummy dispensing method according to any one of claims 8 to 14 is recorded.

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