CN119481723A - A high-order dual-band bandpass frequency selective surface - Google Patents
A high-order dual-band bandpass frequency selective surface Download PDFInfo
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- CN119481723A CN119481723A CN202411615138.2A CN202411615138A CN119481723A CN 119481723 A CN119481723 A CN 119481723A CN 202411615138 A CN202411615138 A CN 202411615138A CN 119481723 A CN119481723 A CN 119481723A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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Abstract
本申请涉及电磁场与微波技术领域，尤其涉及一种高阶双频带的带通频率选择表面，包括上层金属层、介质基板和下层金属层，所述介质基板设置于所述上层金属层和所述下层金属层之间；所述上层金属层和所述下层金属层均在金属层上蚀刻一个大矩形环缝隙和四个小矩形环缝隙，四个小矩形环缝隙位于大矩形环缝隙的四条边上，蚀刻后采用四个小矩形金属贴片、一个大矩形金属贴片和不规则的外围金属贴片。本申请能够增强频率选择性表面的整体性能，使得频率选择性表面在多频带应用中表现出更优异的选择性和稳定性。
The present application relates to the field of electromagnetic field and microwave technology, and in particular to a high-order dual-band bandpass frequency selective surface, comprising an upper metal layer, a dielectric substrate and a lower metal layer, wherein the dielectric substrate is disposed between the upper metal layer and the lower metal layer; a large rectangular ring gap and four small rectangular ring gaps are etched on the metal layer of the upper metal layer and the lower metal layer, wherein the four small rectangular ring gaps are located on the four sides of the large rectangular ring gap, and after etching, four small rectangular metal patches, one large rectangular metal patch and irregular peripheral metal patches are used. The present application can enhance the overall performance of the frequency selective surface, so that the frequency selective surface exhibits better selectivity and stability in multi-band applications.
Description
Technical Field
The application relates to the technical field of electromagnetic fields and microwaves, in particular to a band-pass frequency selective surface with high-order double frequency bands.
Background
The frequency selective surface is a spatial filter consisting of a periodic arrangement of passive resonant cells exhibiting total reflection or total transmission characteristics near the cell resonant frequency. As the requirements of radar and communication equipment for multiband communication are continuously raised, the realization of characteristics such as high selectivity, high isolation, in-band flat multiband frequency selective surface and the like becomes key to solving the demands. Conventional single-layer frequency selective surfaces can only provide a limited number of resonant cells due to their structural limitations, and thus it is difficult to achieve multiple independent pass bands and high order filtering characteristics in designs. Furthermore, the introduction of active devices such as varactors and PIN diodes, while enabling dynamic tuning and dual frequency response, can lead to reduced overall system efficiency over time due to the power consumption issues of these active components themselves.
Disclosure of Invention
(1) Technical problem to be solved
The application provides a band-pass frequency selective surface of a high-order dual-band, which solves the technical problems that the frequency of a single-layer frequency selective surface is limited, and the power consumption of the dual-band frequency selective surface loaded with active devices is high.
(2) Technical proposal
The application provides a band-pass frequency selective surface of a high-order dual-band, which comprises an upper metal layer, a dielectric substrate and a lower metal layer, wherein the dielectric substrate is arranged between the upper metal layer and the lower metal layer;
The upper metal layer and the lower metal layer are etched with a large rectangular ring gap and four small rectangular ring gaps on the metal layer, the four small rectangular ring gaps are positioned on four sides of the large rectangular ring gap, and four small rectangular metal patches, a large rectangular metal patch and an irregular peripheral metal patch are adopted after etching.
The dielectric substrate comprises an upper dielectric substrate and a lower dielectric substrate;
The upper medium substrate is arranged between the upper metal layer and the middle metal layer, the lower medium substrate is arranged between the middle metal layer and the lower metal layer, and the middle metal layer adopts a cross-shaped metal patch.
Further, the upper layer dielectric substrate and the lower layer dielectric substrate both adopt F4BM300, and the relative dielectric constant is 3.
Further, the thickness of the upper medium substrate and the lower medium substrate is 0.762mm.
Further, the thickness of the upper metal layer, the middle metal layer and the lower metal layer was 0.018mm.
Further, the unit period of the band-pass frequency selective surface of the high-order dual band is 16mm.
Further, the side lengths of the large rectangular metal patch and the small rectangular ring gap are 4.42mm, the side length of the small rectangular patch is 1.8mm, the distance between the large rectangular metal patch and the small rectangular metal patch is 2.47mm, the width of the small rectangular ring gap is 3.54mm, and the distance between the small rectangular metal patch and the peripheral metal patch is 1.8mm.
Further, the side length of the small rectangular patch of the cross-shaped metal patch is 1mm, and the side length of the cross-shaped metal patch is 9mm.
Further, the cross-shaped metal patch is used as a parallel inductor and is coupled with the upper metal layer and the lower metal layer.
Further, the upper metal layer, the lower metal layer and the intermediate metal layer are all symmetrical about respective centers, and the entirety of the upper metal layer, the lower metal layer and the intermediate metal layer is rotationally symmetrical about the cross-shaped metal patch in a normal incidence direction.
(3) Advantageous effects
The technical scheme of the application has the following advantages:
According to the high-order dual-band bandpass frequency selective surface provided by the application, through superposition of a plurality of metal layers and dielectric layers, the number of resonant units can be increased, and the mutual coupling effect among the layers can be utilized to enhance the overall performance of the frequency selective surface. This design has multiple independent resonant frequencies, thereby forming multiple pass bands, and transmission zeroes between each pass band can be created to achieve good isolation. The multilayer structure also promotes more complex electromagnetic wave interactions, which in turn produce higher order filtering characteristics, such that the frequency selective surface exhibits more excellent selectivity and stability in multi-band applications.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a three-dimensional view of a bandpass frequency selective surface of a high-order dual-band provided by the present application;
FIG. 2 is a side view of a bandpass frequency selective surface of a higher-order dual-band provided by the application;
FIG. 3 is a diagram of an annular aperture array of an upper metal layer and a lower metal layer provided by the application;
FIG. 4 is a cross patch diagram of an intermediate layer provided by the application;
FIG. 5 is a graph of S-parameters for perpendicular incidence of incident waves in TE polarization or TM polarization of the upper metal layer and upper dielectric substrate combination provided by the application;
FIG. 6 is a graph of S-parameters of incident waves vertically incident when TE polarization or TM polarization is performed on the combination of the upper and lower metal layers and the upper and lower dielectric substrates provided by the application;
FIG. 7 is a graph of S-parameters of incident waves perpendicular to incidence in TE polarization after introduction of an interlayer cross patch;
FIG. 8 is a graph of S-parameters of incident waves at normal incidence when TM polarized after the interlayer cross patch is introduced;
FIG. 9 is a graph showing transmission coefficients at different angles of incidence for TE polarization provided by the present application.
Detailed Description
The following describes in further detail the embodiments of the present application with reference to the drawings and examples. The following examples are illustrative of the application and are not intended to limit the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected via an intervening medium, or in communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise.
Aiming at the technical problems that the frequency of a single-layer frequency selective surface is limited and the power consumption of a dual-band frequency selective surface loaded with an active device is high, the application provides a high-order dual-band pass frequency selective surface designed by adopting a multi-layer cascading technology. Compared with a single-layer frequency selective surface of single-order filtering, the multi-layer frequency selective surface can generate multi-order filtering characteristics so as to realize multi-band or wide-band frequency selective response, and the traditional frequency selective surface only considers a first passband, and the application considers the second passband characteristics of the frequency selective surface so as to be more widely applied.
The following describes in further detail the embodiments of the present application with reference to the drawings and examples. The following examples are illustrative of the application and are not intended to limit the scope of the application.
As shown in FIG. 1, the embodiment of the application provides a band-pass frequency selective surface with high-order double frequency bands, which comprises an upper metal layer, a dielectric substrate and a lower metal layer, wherein the dielectric substrate is arranged between the upper metal layer and the lower metal layer, the upper metal layer and the lower metal layer are respectively etched with a large rectangular ring gap and four small rectangular ring gaps on the metal layer, the four small rectangular ring gaps are positioned on four sides of the large rectangular ring gap, and four small rectangular metal patches, one large rectangular metal patch and an irregular peripheral metal patch are adopted after etching.
The arrangement of the metal patches and the gaps of the upper metal layer or the lower metal layer can be equivalent to parallel connection of an inductor and a capacitor, so that a frequency selective passband can be generated, and the frequency of the passband can be controlled by changing the size of the metal patches or the size of the gaps.
The structure adopts a double-layer frequency selective surface cascade structure of an upper layer and a lower layer metal layer, which are coupled through a dielectric plate, so that the impedance of a single-layer frequency selective surface can be increased, and the transmission coefficient is improved, and the upper layer and the lower layer metal layer are also coupled between adjacent rectangular metal patches in the vertical direction, so that the transformation of the transmission impedance is generated at the high frequency of a passband, and the high-order bandpass characteristic is generated.
Through the designed upper and lower metal patches and the gap layout thereof, transmission zero points are generated on a plurality of frequency points, the isolation between passband is enhanced, the interference between the passband is effectively reduced, and the dual-band passband response is realized.
As shown in fig. 1 and 2, in some embodiments, the semiconductor device further includes an intermediate layer metal layer, the dielectric substrate includes an upper layer dielectric substrate and a lower layer dielectric substrate, the upper layer dielectric substrate is disposed between the upper layer metal layer and the intermediate layer metal layer, the lower layer dielectric substrate is disposed between the intermediate layer metal layer and the lower layer metal layer, and the intermediate layer metal layer adopts a cross-shaped metal patch.
In some embodiments, the upper dielectric substrate and the lower dielectric substrate both use F4BM300 with a relative dielectric constant of 3.
In some embodiments, as shown in fig. 2, the thickness h 1 of the upper dielectric substrate and the lower dielectric substrate is 0.762mm.
In some embodiments, the thickness h 2 of the upper, middle, and lower metal layers is 0.018mm, as shown in fig. 2.
In some embodiments, the unit period p of the bandpass frequency selective surface of the higher-order dual-band is 16mm, as shown in fig. 1.
In some embodiments, as shown in fig. 3, the side length a of the large rectangular metal patch and the small rectangular ring gap is 4.42mm, the side length b of the small rectangular patch is 1.8mm, the distance c between the large rectangular metal patch and the small rectangular metal patch is 2.47mm, the width e of the small rectangular ring gap is 3.54mm, and the distance d between the small rectangular metal patch and the peripheral metal patch is 1.8mm.
In some embodiments, as shown in fig. 4, the side length w of the small rectangular patch of the cross-shaped metal patch is 1mm, and the side length l of the cross-shaped metal patch is 9mm.
In some embodiments, the cross-shaped metal patch acts as a shunt inductance, coupling with the upper metal layer and the lower metal layer.
In some embodiments, the upper metal layer, the lower metal layer, and the intermediate metal layer are each symmetrical about a respective center, and the entirety of the upper metal layer, the lower metal layer, and the intermediate metal layer is rotationally symmetrical about the cross-shaped metal patch in a normal incidence direction.
The high-order dual-band pass frequency selective surface is composed of two dielectric substrates and three metal layers, wherein the three metal layers are an upper metal layer, an intermediate metal layer and a lower metal layer respectively, and are separated by the two dielectric substrates, and the structure is shown in figure 1. The two dielectric plates are F4BM300, the relative dielectric constant is 3, and the thicknesses of the dielectric plate and the metal layer are h 1＝0.762mm、h2 = 0.018mm, respectively, as shown in figure 2. The cell period is p=16 mm.
The upper metal layer and the lower metal layer are identical and are formed by etching 1 large rectangular ring gap and 4 small rectangular ring gaps on the metal layers, the 4 small rectangular ring gaps are positioned on 4 sides of the large rectangular ring gap, and the etched metal layers are composed of 4 small rectangular metal patches, 1 large rectangular metal patch and irregular peripheral metal patches, as shown in fig. 3, a=4.42 mm, b=1.8 mm, c=2.47 mm, e=3.54 mm and d=1.06 mm, wherein a is the side length of the large rectangular metal patch and the small rectangular ring gap, b is the side length of the small rectangular metal patch, c is the distance between the large rectangular metal patch and the small rectangular metal patch, e is the width of the small rectangular ring gap, and d is the distance between the small rectangular metal patch and the peripheral metal patch.
The middle metal layer is a cross-shaped metal patch. As shown in fig. 4, specific dimensional parameters are w=1 mm, l=9mm, w is the side length of the small rectangular patch, and l is the side length of the cross-shaped metal patch. Electromagnetic waves are incident along the z direction, the TE polarization direction is the y direction, and the TM polarization direction is the x direction.
The structure introduces a cross-shaped metal patch between the upper and lower metal layers, and is separated by two dielectric plates. The cross patch is used as a parallel inductor and is coupled with the upper metal layer and the lower metal layer, so that the impedance of the structure is enhanced at a high frequency, and the performance of the high-order bandpass characteristic is improved.
The upper and lower metal layers are of a plane structure symmetrical about the center, the cross-shaped metal patch layer is also of a plane structure symmetrical about the center, and the three metal layers are rotationally symmetrical about the cross-shaped metal patch in the normal incidence direction, so that the structure is insensitive to the angle of the incident wave.
Fig. 5 is an S-parameter of the upper metal layer in combination with the upper dielectric substrate layer at either TE polarization or TM polarization normal incidence, creating a passband at a resonant frequency of 9.94 GHz. Fig. 6 is a graph of TE polarization or TM polarization normal incidence when the upper and lower metal layers are separated by the upper and lower dielectric substrate layers, with the resonant frequency 9.94GHz shifted to 8.61GHz at low frequencies and forming a first passband at this frequency, with two transmission zeroes at frequencies 12.32GHz and 14.58GHz due to the interaction between the upper and lower metal layers, with the tendency of a second passband. The presence of these two nulls effectively increases isolation between the pass bands, reducing inter-band interference and thus improving the performance of the frequency selective surface in multi-band applications.
In order to give the second passband of fig. 6a higher order characteristic, a cross patch is introduced between the upper and lower metal layers whose normal incidence frequency response under TE polarization is shown in fig. 7. By the design, a transmission zero point is added at the 10.77GHz position between the two pass bands, and the isolation effect between the pass bands is enhanced. At this time, the resonance frequency of the first passband is shifted further toward the low frequency to 6.55GHz. Within the second passband, three independent resonant frequencies are generated at 12.31ghz,13.16ghz,14.02ghz, respectively, similar to TE polarization for the case of TM polarization, due to the multiple coupling effect between the cross patch and the upper and lower metal layers.
Fig. 7 shows the frequency response at normal incidence for TE polarization, with a fractional bandwidth of the first passband of 24.8%, from 5.79GHz to 7.43GHz, and a fractional bandwidth of the second passband of 14.8%, from 12.41GHz to 14.40GHz. Fig. 8 shows the frequency response at normal incidence for TM polarization with a fractional bandwidth of the first pass band of 23.3%, from 5.79GHz to 7.32GHz, and a fractional bandwidth of the second pass band of 14.7%, from 12.29GHz to 14.25GHz. The results for TM and TE polarization are almost identical, indicating that the proposed filter has polarization insensitivity.
Fig. 9 shows the transmission coefficients of the frequency selective surface at different angles of incidence for TE polarization. The frequency selective surface proposed by the present application is capable of operating effectively at 45 deg.. As the angle of incidence increases, the impedance of the frequency selective surface increases, resulting in a decrease in the-3 dB bandwidth of the TE polarization. Specifically, when the incident angles θ are 0 °, 15 °,30 °, and 45 °, the-3 dB bandwidths of the first pass band are 24.8%, 22.5%, 19.8%, and 16.1%, respectively, and the-3 dB bandwidths of the second pass band are 14.8%, 12.12%, 10.6%, and 8.0%, respectively. The results show that the passband frequency response of TE polarization has good stability at different angles of incidence.
The band-pass frequency selection surface of the high-order double frequency band provided by the application realizes double-frequency band-pass response, and through the designed upper layer metal patch, the lower layer metal patch and the gap layout thereof, transmission zero points are generated on a plurality of frequency points, the isolation between the pass frequency bands is enhanced, and the interference between the bands is effectively reduced. Due to the multiple coupling mechanisms formed between the cross-shaped patch of the middle layer and the upper and lower metal layers, a plurality of independent resonance points are formed in a specific frequency range, and further, the obvious high-order bandpass characteristic is displayed.
The common frequency selective surface is difficult to realize high-order response, and the structural unit designed by the scheme realizes third-order filter response in a second passband and has rectangular selectivity. Compared with a single-layer frequency selective surface, the multi-layer frequency selective surface designed by the application realizes two filtering pass bands and has better isolation.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-described division of the functional units and modules is illustrated, and in practical application, the above-described functional distribution may be performed by different functional units and modules according to needs, i.e. the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-described functions. The functional units and modules in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. In addition, the specific names of the functional units and modules are only for distinguishing from each other, and are not used for limiting the protection scope of the present application.
It should be understood that, in the present specification, each embodiment is described in an incremental manner, and the same or similar parts between the embodiments are all referred to each other, and each embodiment is mainly described in a different point from other embodiments. The application is not limited to the specific constructions described above and shown in the drawings. Also, a detailed description of known method techniques is omitted here for the sake of brevity.
The foregoing embodiments are merely illustrative of the technical solutions of the present application, and not restrictive, and although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that modifications may still be made to the technical solutions described in the foregoing embodiments or equivalent substitutions of some technical features thereof, and that such modifications or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. The band-pass frequency selective surface of the high-order dual-band is characterized by comprising an upper metal layer, a dielectric substrate and a lower metal layer, wherein the dielectric substrate is arranged between the upper metal layer and the lower metal layer;
The upper metal layer and the lower metal layer are etched with a large rectangular ring gap and four small rectangular ring gaps on the metal layer, the four small rectangular ring gaps are positioned on four sides of the large rectangular ring gap, and four small rectangular metal patches, a large rectangular metal patch and an irregular peripheral metal patch are adopted after etching.
2. The high-order dual-band bandpass frequency selective surface of claim 1 further comprising an intermediate metal layer, said dielectric substrate comprising an upper dielectric substrate and a lower dielectric substrate;
The upper medium substrate is arranged between the upper metal layer and the middle metal layer, the lower medium substrate is arranged between the middle metal layer and the lower metal layer, and the middle metal layer adopts a cross-shaped metal patch.
3. The high-order dual-band bandpass frequency selective surface of claim 2 wherein said upper-layer dielectric substrate and said lower-layer dielectric substrate each employ F4BM300 having a relative dielectric constant of 3.
4. The high-order dual-band bandpass frequency selective surface of claim 2 wherein the upper-layer dielectric substrate and the lower-layer dielectric substrate each have a thickness of 0.762mm.
5. The high-order dual-band bandpass frequency selective surface of claim 2 wherein the upper-layer metal layer, the middle-layer metal layer, and the lower-layer metal layer are each 0.018mm thick.
6. The high-order dual-band bandpass frequency selective surface according to claim 1, wherein the unit period of the high-order dual-band bandpass frequency selective surface is 16mm.
7. The high order dual band bandpass frequency selective surface of claim 1 wherein said large rectangular metal patch and said small rectangular ring gap each have a side length of 4.42mm, said small rectangular patch has a side length of 1.8mm, the distance between said large rectangular metal patch and said small rectangular metal patch is 2.47mm, the width of said small rectangular ring gap is 3.54mm, and the distance between said small rectangular metal patch and said peripheral metal patch is 1.8mm.
8. The high-order dual-band bandpass frequency selective surface according to claim 2, wherein the side length of the small rectangular patch of the cross-shaped metal patch is 1mm, and the side length of the cross-shaped metal patch is 9mm.
9. The high order dual band bandpass frequency selective surface of claim 2 wherein said cross-shaped metal patch is coupled as a shunt inductance with said upper metal layer and said lower metal layer.
10. The high-order dual-band bandpass frequency selective surface of claim 2 wherein said upper-layer metal layer, said lower-layer metal layer, and said intermediate-layer metal layer are each symmetric about their respective centers, and the entirety of said upper-layer metal layer, said lower-layer metal layer, and said intermediate-layer metal layer is rotationally symmetric about said cross-shaped metal patch in a normal incidence direction.
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| CN202411615138.2A CN119481723A (en) | 2024-11-13 | 2024-11-13 | A high-order dual-band bandpass frequency selective surface |
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| CN202411615138.2A CN119481723A (en) | 2024-11-13 | 2024-11-13 | A high-order dual-band bandpass frequency selective surface |
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