CN119450947A - A method for preparing an integrated circuit resistant to space environment - Google Patents
A method for preparing an integrated circuit resistant to space environment Download PDFInfo
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- CN119450947A CN119450947A CN202510011930.5A CN202510011930A CN119450947A CN 119450947 A CN119450947 A CN 119450947A CN 202510011930 A CN202510011930 A CN 202510011930A CN 119450947 A CN119450947 A CN 119450947A
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0091—Apparatus for coating printed circuits using liquid non-metallic coating compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1316—Moulded encapsulation of mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The application relates to a preparation method of an integrated circuit resistant to a space environment, which relates to the technical field of semiconductors and comprises the following steps of S1, a reflow soldering process, S2, a bonding process, S3, a bonding process, S4, a plastic packaging process, S5, a scribing process and S6, and coating of a composite film, wherein the coating process comprises the following steps of B1, surface modification to form a SiON coating, B2, sputtering deposition to form a SiO2 layer, the SiON coating and the SiO2 layer form a composite atomic oxygen protective film layer, and B3, annealing treatment of the composite atomic oxygen protective film layer, wherein the stability of the composite atomic oxygen protective film layer is verified through a cold and hot circulation test, and the SiON/SiO2 composite film layer is well combined with a plastic packaging material. The technology combines the advantages of the organic and inorganic protective layers, provides high flexibility and strong corrosion resistance, has simple and convenient preparation process, low cost and environmental protection, is suitable for the fields of electronic packaging, integrated circuits, aviation materials and the like, and shows excellent structural characteristics and bonding performance.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a preparation method of an integrated circuit resistant to space environment.
Background
Integrated circuits play an important role in aircraft control systems, navigation positioning and communication systems as an important component of an aircraft. In the low earth orbit environment, the epoxy plastic package material collides with atomic oxygen, the surface of the epoxy plastic package material is oxidized and corroded by the higher translational energy of the atomic oxygen, so that the internal structure is damaged, the performance of the integrated circuit is affected, and finally, the integrated circuit is disabled. Therefore, the domestic and foreign aerospace specialists agree that atomic oxygen is a main factor causing the damage of the plastic package integrated circuit in the low earth orbit. Therefore, the method has great significance in effectively reducing the influence of atomic oxygen corrosion on the plastic package integrated circuit.
The existing integrated circuit preparation has the problems that the integrated circuit of the traditional metal-based package has high cost and high density which limit the wide application range, and the integrated circuit of the ceramic material package is an airtight package, and is only used for the integrated circuit of the advanced microelectronic package, such as the integrated circuit of the high-temperature, high-reliability and high-airtight package of the military industry due to the brittleness of materials and insufficient crack resistance.
The plastic packaged integrated circuit has low price and simple molding process, is suitable for large-scale production, accounts for over 95 percent of the whole packaging material at present, almost completely covers the field of civil integrated circuits, and is an integrated circuit in an important packaging form for realizing miniaturization, light weight and low cost of electronic products. The plastic package material of the integrated circuit packaged by plastic is mainly epoxy resin, and the low-earth orbit atmosphere is mainly composed of atomic oxygen and nitrogen, wherein the atomic oxygen has extremely strong oxidation performance and has much stronger oxidation property than molecular oxygen. The collision kinetic energy of atomic oxygen is 5.3 eV, and the resulting effect is close to the high temperature of 4.8X104K. This strong high temperature oxidation and high velocity impact can cause severe erosion of the material. AWAJA and other researches show that under the combined action of various space environment factors, the degradation speed of the composite material in a low earth orbit is increased, and serious chain breakage and deflation phenomena are generated on the surface of the material.
A solution is now proposed for the related art in the above.
Disclosure of Invention
The invention aims to provide a preparation method of an integrated circuit resistant to a space environment, which solves the problem that a plastic package integrated circuit is corroded by atomic oxygen to cause failure in a low earth orbit environment.
The application provides a preparation method of an integrated circuit resistant to space environment, which adopts the following technical scheme:
A preparation method of an integrated circuit resistant to space environment comprises the following steps:
S1, a reflow soldering process, namely, pre-coating solder paste on a bonding pad of a circuit board, attaching SMT components, and then completing a soldering process by utilizing a conveying system and a temperature area of reflow soldering equipment;
S2, a bonding procedure, namely fixing the chip on the PCB substrate by using conductive adhesive to ensure mechanical fixation and electrical connection;
S3, a bonding procedure, namely realizing the electrical interconnection between each component such as the chip and the substrate by using gold wires with different wire diameters;
s4, a plastic packaging procedure, namely packaging the PCB board through plastic packaging materials;
S5, a dicing procedure, namely fixing the whole plate product through a UV film, and cutting the whole plate product into single products by using a round diamond blade to finish the preparation of the plastic package integrated circuit;
s6, coating the composite film, namely coating the plastic package integrated circuit, wherein the coating process is as follows:
b1, surface modification to form SiON coating;
b2, depositing by a sputtering method to form a SiO2 layer, wherein the SiON coating and the SiO2 layer form a composite atomic oxygen protective film layer;
And B3, annealing the composite atomic oxygen protective film layer.
By adopting the technical scheme, the preparation method solves the problems that materials such as polysiloxane, polysilazane, fluorinated polymer and the like with high flexibility are easy to age, crack and fall off in a space orbit environment, and simultaneously solves the problems that the inorganic coating represented by SiO2 and Al2O3 with simple preparation process and good atomic oxygen erosion resistance has poor flexibility, and cracks are easy to generate in the processes of processing, storage, transportation and use, and become channels of atomic oxygen erosion base materials, so that the integrated circuit has good atomic oxygen erosion resistance.
Preferably, in step S1, a proper amount and form of solder paste is coated on a bonding pad of a circuit board in advance, then an SMT component is pasted to a corresponding position and fixed by the solder paste, then the circuit board on which the SMT component is pasted enters reflow soldering equipment, and a conveying system drives the circuit board to solder the SMT component on a printed board through each set temperature area in the reflow soldering equipment.
Through adopting above-mentioned scheme, at first, accurately coat appropriate amount of solder paste on every pad on the circuit board, use automatic chip mounter according to preset procedure and coordinate, place SMT components and parts on the PCB accurately corresponding position, the stickness of solder paste has guaranteed that components and parts can keep in the exact position before getting into reflow soldering equipment, then the PCB board of subsides dress components and parts is sent into reflow oven, this kind of technological process can realize high accuracy, high-efficient electronic components assembly, do not need expensive equipment, be applicable to mass production and the manufacturing of complicated circuit. The method reduces human errors, improves the quality and consistency of products, reduces the production cost, and enables the electronic products to be more miniaturized and have high performance by applying the reflow soldering technology.
Preferably, the solder paste is subjected to the following steps in vacuum reflow soldering:
A1, preheating, namely heating from room temperature to 100-180 ℃ and keeping the temperature within 5 ℃ per minute
A2, preserving heat, namely maintaining the temperature in the reflow soldering equipment at 150-200 ℃ for 3-5 minutes, and slowly raising the temperature to 200 ℃;
A3, refluxing, namely quickly heating to 220-280 ℃, keeping the temperature for 60-90 seconds, and melting the solder paste into a liquid state to flow along the contact surface of the SMT component to form welding spots
A4, cooling, namely reducing the temperature of the circuit board to below 100 ℃ at a rate of 3-6 ℃ per second, and naturally cooling to room temperature.
By adopting the scheme, the solder paste is firstly subjected to a drying process in reflow soldering equipment, the temperature is raised from room temperature to 100-150 ℃ and is not higher than 5 ℃ per minute, so that the solvent and the water in the solder paste are fully volatilized, bubbles or splashes are avoided in the soldering process, the soldering flux of the solder paste is activated in the preheating stage of A2, the temperature is gradually raised, preparation is made for subsequent melting, the soldering quality is ensured, A3 is the key for forming a good soldering spot, the temperature and the time are required to be precisely controlled, the soldering paste uniformly covers a soldering area, A4 is called wetting, is an important link for successful soldering, the soldering spot is ensured to have good mechanical strength and electrical performance, and finally A5 is cooled at a speed of 3-6 ℃ per second, so that the temperature of a circuit board is reduced to below 100 ℃, and then the circuit board is naturally cooled to the room temperature, and the quick cooling is beneficial to solidifying the soldering spot, so that the soldering reliability and the stability are improved.
Preferably, in step S2, the chip is fixed on the PCB substrate by using a conductive adhesive, and the dispensing amount of the conductive adhesive is the same as the dispensing volume of the chip each time, so that the chip and the PCB substrate are mechanically fixed and electrically connected.
Through adopting above-mentioned scheme, the volume of gluing at every turn is the same with the point of chip glues the department volume, has ensured that the conducting resin can evenly and fully fill the space between chip and the PCB base plate, and the conducting resin has certain stickness, can be immediately fixed it on the PCB base plate after the chip is placed, prevents that the chip from taking place to remove or squint in subsequent technology, and the conducting particle in the conducting resin forms the conducting path in the solidification process simultaneously to realize the electrical connection between chip and the PCB base plate, this kind of mode compares traditional welding process can simplify production flow, reduce process step, thereby improve production efficiency.
Preferably, in step S3, electrical interconnection between the chip and the PCB substrate and between the chip and the transition piece are implemented by gold wires with different wire diameters, and electrical interconnection between the PCB substrate, between conductors, between the substrate and the lead posts, and between the resistive-capacitive device and the substrate are implemented by the gold wires.
By adopting the scheme, the gold wires with different wire diameters are selected according to different application requirements, jin Sitong overheat, pressure, ultrasonic energy and other modes are bonded with a chip, a PCB substrate and the like, the gold wires have good heat resistance, moisture resistance and aging resistance, the reliability of electronic products can be improved, the bonding is that the extending part is melted through arc discharge and becomes spherical under the action of surface tension, then the bonding is pressed and welded on a bonding pad of the chip or the PCB, after bonding is completed, the welding point is solidified, quality inspection is carried out, the reliability of electrical connection is ensured, the production efficiency can be remarkably improved, the production time is reduced compared with other connection modes, and the gold wire bonding technology is not only suitable for the connection between the chip and the PCB substrate, but also suitable for the electrical interconnection between the conductor and the PCB substrate, between the substrate and the lead post, and between the resistance-capacitance device and the substrate.
Preferably, in step S4, the assembled PCB substrate is encapsulated by using a plastic molding compound, and the encapsulation comprises material waking, mold cleaning, mold wetting, plasma cleaning, plastic encapsulation and post-curing, and the specific operations are as follows:
a step of material awakening, which is to put the plastic package material into a constant temperature and humidity box for preheating, wherein the temperature is controlled to be 15-25 ℃ and the humidity is controlled to be 30-60%;
Cleaning the mould, namely cleaning the surface of the mould by using a cleaning adhesive tape;
The mould is moistened, namely the mould surface is cleaned by using a mould moistening adhesive tape;
Plasma cleaning, namely performing surface treatment on the PCB substrate by using plasma cleaning equipment to remove oxides and organic matters on the surface;
Plastic packaging, namely putting the preheated plastic packaging material into a die, and wrapping the plastic packaging material on the PCB substrate through an injection molding process;
and (3) post-curing, namely placing the PCB subjected to plastic package into an oven for high-temperature curing, wherein the temperature of the oven is 100-180 ℃ and the duration is 2-8 hours.
By adopting the scheme, the assembled PCB is packaged by using the plastic packaging material, wherein the plastic packaging material is ensured to reach proper temperature and humidity before being put into a die, the follow-up injection molding process is facilitated, the die cleaning is crucial to ensure good contact between the plastic packaging material and the die, the packaging quality and appearance are improved, the die wetting is facilitated, the plastic packaged PCB is taken out of the die more easily after the plastic packaging is finished, meanwhile, the abrasion of the surface of the die is reduced, the surface activity of the PCB substrate is improved by plasma cleaning, the bonding force between the plastic packaging material and the substrate is enhanced, the plastic packaging material is completely cured after the plastic packaging, the packaging stability and durability are improved, the PCB substrate can be effectively packaged by the process, the protection and support are provided for a circuit, the influence of the external environment on the circuit performance is avoided, the reliability of the product is improved, the electromagnetic shielding can be provided by the package, the electromagnetic interference is prevented, and the stability of the electronic product is ensured.
Preferably, in step S5, the whole plastic-sealed board product is stuck on a UV film, the UV film is uniformly and tightly stuck on the surface of the whole plastic-sealed board product by lightly rolling from the center to the periphery by using a roller under proper pressure, so that the whole plastic-sealed board product is fixed and does not shift in the cutting process, the cutting process is that a round diamond blade is used for completely cutting on a cutting path of a PCB substrate, the whole plastic-sealed board product is cut into single products, and a back bonding pad of the product is protected by adopting a customized polyamide high-temperature adhesive tape.
Through adopting above-mentioned scheme, select suitable UV membrane, ensure that its viscosity is moderate, can fix the whole board product that the plastic envelope is good, be difficult to peel off again in subsequent operation, place the whole board product that the plastic envelope is complete on clean work platform, avoid dust and impurity to influence the laminating effect, then, tiling the UV membrane on whole board product surface, ensure bubble and fold free, use the cylinder to roll down from center to periphery gently with appropriate pressure, make the even inseparable laminating of UV membrane on whole board product surface, through the fixed action of UV membrane, can reduce shut down and adjustment time that leads to because of whole board product shifts in the cutting process, thereby improve production efficiency, the UV membrane can ensure that whole board product keeps stable in the cutting process, reduce the production of cutting error and defective products, improve product quality, after the cutting is accomplished, because the good viscidity and the easy peelability of UV membrane can easily take off single product from the UV membrane, the subsequent packing of being convenient for, transportation and use.
Preferably, in step B1 in step S6, the prepared plastic package integrated circuit is put into a perhydro polysilazane solution for surface modification treatment, wherein the mass fractions of various substances in the solution are 5-20% of perhydro polysilazane, 0.5-3% of oxide filler, 0.03-0.1% of amine catalyst, 80-95% of alkane solvent, 0.001-0.005% of leveling additive, and the sample is taken out after being soaked for 10-100 seconds, and the solvent is transferred to a drying box for curing the coating at the temperature of 80-150 ℃ for 1-5 hours, wherein the thickness of the SiON coating is about 1um-5um.
By adopting the scheme, the solution is prepared according to the mass fraction, a basis is provided for the subsequent surface modification treatment, a plastic package integrated circuit sample is soaked in the solution, the time is controlled to be 10-100 seconds, the components in the solution can fully contact with the surface of the sample, a basis is laid for forming a uniform coating, the sample is taken out after soaking, the solvent is naturally volatilized, the step is necessary because the volatilization of the solvent is favorable for the primary solidification and stabilization of the coating, the sample is taken out after soaking, the step is necessary because the volatilization of the solvent is favorable for the primary solidification and stabilization of the coating, a SiON coating with the thickness of about 1um-5um can be formed on the surface of the plastic package integrated circuit through the process flow, the coating not only can provide good protection effect, prevent the invasion of moisture, oxygen and other corrosive substances, but also can enhance the mechanical strength and the wear resistance of the circuit, meanwhile, the SiON material also has good electrical insulation and thermal stability, and has important significance for improving the performance and reliability of the integrated circuit.
Preferably, in step B2 of step S6, the surface-modified plastic-packaged integrated circuit adopts a sputtering method to deposit a SiO2 layer to form a composite atomic oxygen protective film, the sputtering pressure and the power respectively adopt 0.30-0.5 Pa and 200-600W, the sputtering time is 10-50 min, and the film thickness of the corresponding composite atomic oxygen protective film is 70-300nm.
By adopting the scheme, the SiO2 layer is an excellent insulating material and has very stable chemical property, the SiO2 layer plays a masking role on the diffusion of impurities, the sputtering method is used under a high vacuum environment, the target is usually a high-purity material, so that the deposited SiO2 film has high purity, and meanwhile, the SiO2 film prepared by the sputtering method has high crystallinity, which is helpful for improving the physical and chemical stability of the film.
Preferably, in step B3 in step S6, the annealing temperature of the annealing treatment of the composite atomic oxygen protective film layer is 120 ℃ to 150, and the annealing time is 1h to 3h.
Through adopting above-mentioned scheme, through annealing treatment, can eliminate the residual stress in the complex rete, improve stability and the durability of coating, simultaneously, annealing still helps improving the microstructure of coating, make it more insensible, annealing treatment can promote the combination between complex rete and the plastic package integrated circuit base member simultaneously, strengthen the adhesive force between the two, prevent to appear peeling off the phenomenon in the use, and in the annealing process, high temperature can make the tiny defect in the complex rete obtain repairing or reducing, thereby improve the overall quality of coating, siON/SiO2 complex rete through annealing treatment has better atomic oxygen resistance, can effectively protect the integrated circuit from atomic oxygen's erosion in the space environment, the complex rete that the annealing was accomplished should carry out the service environment under the cold and hot circulation experiment simulation extreme temperature condition simultaneously, can effectively evaluate the durability and the reliability of material in long-term use, this experimental step is for placing the sample in test device, the cold and hot circulation test begin, according to test parameter setting, heating and cooling system can make the sample between high temperature and low temperature alternately expose, the thermal circulation can be exposed at this temperature and the thermal circulation can be according to the thermal expansion and thermal circulation change of the prediction in the experimental design, the thermal stability is important to the product is improved, the thermal circulation stability is provided for the product is important to the thermal expansion stability is analyzed and the thermal circulation stability is improved.
In summary, the present application includes at least one of the following beneficial technical effects:
1. The integrated circuit resistant to the space environment has good performance of resisting atomic oxygen corrosion;
2. through a cold and hot circulation test, the SiON/SiO2 composite film layer has no crack on the surface, and the SiON/SiO2 composite film layer and the plastic package integrated circuit have good combination property;
3. The integrated circuit resistant to the space environment combines the advantages of the organic and inorganic atomic oxygen protective layers, and has high flexibility of the organic coating and high resistance to atomic oxygen attack of the inorganic coating;
4. the treatment, drying and curing equipment used in the invention is simple and common, expensive equipment is not needed to be added, the experiment cost is low, and the preparation process is environment-friendly;
5. the SiON/SiO2 composite film prepared by the method is wide in application, can be used for special requirements of electronic packaging, integrated circuits, aviation materials and the like, and has good structural characteristics and bonding performance.
Drawings
FIG. 1 is a flow chart of a method of fabricating a space-tolerant integrated circuit according to the present application;
FIG. 2 is a flow chart of a reflow process of the present application;
FIG. 3 is a flow chart of the composite film coating of the present application;
FIG. 4 is a graph comparing atomic oxygen test before and after a plastic packaged integrated circuit of the present application and a plastic packaged integrated circuit coated with a SiON/SiO2 composite film.
The reference numerals comprise a1, the surface of a plastic package integrated circuit, a2, the surface of the plastic package integrated circuit after an atomic oxygen test, b1, the surface of the plastic package integrated circuit coated with a SiON/SiO2 composite film, and b2, the surface of the plastic package integrated circuit coated with the SiON/SiO2 composite film after the atomic oxygen test.
Detailed Description
The present application will be described in further detail with reference to fig. 1 to 4.
The embodiment of the application discloses a preparation method of an integrated circuit resistant to a space environment.
Referring to fig. 1 and 4, a method for manufacturing an integrated circuit resistant to a space environment includes the steps of:
S1, a reflow soldering process, namely, pre-coating solder paste on a bonding pad of a circuit board, attaching SMT components, and then completing a soldering process by utilizing a conveying system and a temperature area of reflow soldering equipment;
S2, a bonding procedure, namely fixing the chip on the PCB substrate by using conductive adhesive to ensure mechanical fixation and electrical connection;
S3, a bonding procedure, namely realizing the electrical interconnection between each component such as the chip and the substrate by using gold wires with different wire diameters;
s4, a plastic packaging procedure, namely packaging the PCB board through plastic packaging materials;
S5, a dicing procedure, namely fixing the whole plate product through a UV film, and cutting the whole plate product into single products by using a round diamond blade to finish the preparation of the plastic package integrated circuit;
S6, coating the composite film, namely coating the plastic package integrated circuit, wherein the coating process is as follows:
b1, surface modification to form SiON coating;
B2, depositing a SiO2 layer by a sputtering method, and forming a composite atomic oxygen protective film layer by the SiON coating and the SiO2 layer;
And B3, annealing the composite atomic oxygen protective film layer.
Specifically, solder paste is precoated on the bonding pad of the circuit board, SMT components are attached, and the reflow soldering process can realize high-precision and high-efficiency soldering, so that the production efficiency is improved, the cost is reduced, and the product quality is improved. The method is high in automation degree, wide in applicability and capable of ensuring welding quality and reliability, a chip is fixed on a PCB substrate by using conductive adhesive to ensure mechanical fixation and electrical connection, the conductive adhesive not only provides physical fixation but also ensures good electrical connection, the stability and reliability of a circuit are improved, the electrical interconnection between the chip and components such as the substrate is realized by using gold wires with different wire diameters, the reliable electrical connection is provided by gold wire bonding, the method is suitable for high-density integrated circuits, the performance and the reliability of the circuit are improved, the PCB is packaged by using plastic packaging materials to protect the internal circuit from the influence of external environment, the plastic packaging materials can provide physical protection to prevent damage to the circuit caused by moisture, dust and other corrosive substances, the service life of the product is prolonged, the whole board product is fixed by using a UV film, the product is cut into a single product by using a round diamond blade, the preparation of the plastic packaging integrated circuit is finished, the step ensures the integrity and consistency of the product, the foundation is laid for the subsequent composite film coating, an SiON coating is formed on the surface of the integrated circuit by using a specific chemical reaction, the SiON coating is formed on the surface of the integrated circuit, the adhesive film is formed on the surface of the SiON coating layer, the adhesive force is improved, the composite film is formed, and the radiation resistance is improved, and the stability is improved, and the performance is improved.
After coating, an atomic oxygen exposure test is carried out to test the performance of the composite membrane layer, the atomic oxygen exposure test adopts atomic oxygen ground simulation equipment to carry out atomic oxygen ground simulation test on the SiON/SiO2 composite atomic oxygen protective silicon membrane layer, the atomic oxygen energy is about 5 eV, the atomic oxygen flux density is 0.96 multiplied by 1016 atom/cm < 2 >. S, the exposure time is 121.5 h, the atomic oxygen accumulated flux is 4.2 multiplied by 1021 atom/cm < 2 >, no crack appears on the surface of the SiON/SiO2 composite membrane layer, and the bonding performance of the SiON/SiO2 composite membrane layer and a plastic package integrated circuit is good.
Referring to fig. 1, in step S1, a solder paste of a proper amount and a proper form is applied to a pad of a circuit board in advance, then an SMT component is mounted at a corresponding position and fixed by the solder paste, and then the circuit board mounted with the SMT component is fed into a reflow soldering apparatus, and a transfer system drives the circuit board to solder the SMT component to a printed board through each set temperature region in the reflow soldering apparatus.
Specifically, a proper amount and a proper form of soldering paste are coated on a bonding pad of a circuit board in advance, the soldering paste is used at a medium temperature and a high temperature, the flux activity is R level, the soldering paste is used for soldering of space and aviation electronic products, the quantity and the shape of the soldering paste need to be strictly controlled so as to ensure that good welding spots can be formed in the subsequent soldering process, SMT components are attached to corresponding positions on the circuit board, the components are fixed on the bonding pad through the soldering paste, each component is ensured to be accurately placed, then the circuit board with the SMT components attached is sent into a conveying system of a reflow soldering device, the conveying system can drive the circuit board to pass through each temperature area of the reflow soldering device to complete a soldering process, the circuit board is heated through a set temperature curve in the reflow soldering device, so that the soldering paste is melted and firmly formed with pins and the bonding pads of the components, the whole process needs to strictly control the temperature and time so as to ensure the soldering quality, after the soldering is finished, the appearance inspection and the electrical test are carried out on the circuit board, all the welding spots are ensured to be in accordance with requirements, and defects such as not to repair or reflow soldering are carried out when necessary.
Referring to fig. 2, the solder paste is subjected to the following steps in vacuum reflow:
A1, preheating, namely heating from room temperature to 100-180 ℃ and keeping the temperature within 5 ℃ per minute
A2, preserving heat, namely maintaining the temperature in the reflow soldering equipment at 150-200 ℃ for 3-5 minutes, and slowly raising the temperature to 200 ℃;
A3, refluxing, namely quickly heating to 220-280 ℃, keeping the temperature for 60-90 seconds, and melting the solder paste into a liquid state to flow along the contact surface of the SMT component to form welding spots
A4, cooling, namely reducing the temperature of the circuit board to below 100 ℃ at a rate of 3-6 ℃ per second, and naturally cooling to room temperature.
Specifically, vacuum reflow soldering is of the type TRV-1203-N-JH, and the temperature is gradually increased from room temperature to between 100 ℃ and 150 ℃. The temperature rise rate is controlled to be no more than 5 ℃ per minute to prevent welding defects caused by rapid volatilization of the solvent in the solder paste, the process is helpful for slowly evaporating the solvent in the solder paste to prevent formation of small tin beads and internal stress of the component, the welding quality is ensured to be kept at a temperature of between 150 and 180 ℃ for 3 to 5 minutes in reflow soldering equipment and then slowly raised to 200 ℃, the stage activates the soldering flux to remove metal oxides and pollutants, clean surfaces are provided for subsequent welding, the temperature is quickly raised to 220 to 250 ℃ and kept at the temperature for 60 to 90 seconds, solder particles are completely melted at the stage to form liquid tin and cover all possible surfaces under the action of surface tension to form welding spots, the solder paste flows along the contact surface of the component to form welding spots after being melted into liquid state, the process ensures that the solder paste can sufficiently wet the welding spots and the pins of the component to form firm electrical connection, the temperature of a circuit board is lowered to be below 100 ℃ at a rate of 3 to 6 ℃ per second, and then naturally cooled to room temperature, the temperature is quickly raised to facilitate the control of the temperature of the component to avoid the excessive cooling stress, but the internal stress is prevented from being generated.
Referring to fig. 1, in step S2, a chip is fixed on a PCB substrate by conductive adhesive, and the amount of the conductive adhesive dispensed each time is the same as the volume of the dispensing portion of the chip, so that the chip and the PCB substrate are mechanically fixed and electrically connected.
Specifically, clean cloth or a non-slag tissue is used for dipping deionized water or an organic solvent to wipe the surface of a substrate, sundries such as dust, oil stains and the like are removed, for the surface of a special substrate, an abrasive tool is required to be used for leveling the surface so as to increase the adhesive force of glue, and the conductive adhesive is uniformly stirred according to a specified proportion and consists of a resin matrix, conductive filler and an additive. The common resin matrix comprises epoxy resin, acrylic resin and the like, the conductive filler comprises silver powder, copper powder, carbon black and the like, the additive is used for improving conductivity and bonding performance, the filler and the glue matrix are fully mixed, a brush, a spray gun or other coating equipment is used for uniformly coating the conductive glue on the substrate, the thickness of the coating is ensured to be uniform, for the substrate needing to be filled with holes, the conductive glue is filled into the holes by using a conductive glue filling tool, the surface of the whole substrate is conductive, the substrate is placed for a period of time after dispensing, the time is adjusted according to the area of a chip so as to prevent silver particles from climbing to the side wall of the chip, then the temperature rise and solidification are carried out, the temperature rise stage and the constant temperature stage are included, so as to ensure that the conductive glue is stable and completely solidified, the final inspection is carried out on the product after solidification is finished, the appearance is ensured to meet the conditions, no crack or drop, and the shearing strength meets the requirements, finally the packaging is carried out, the dispensing is prepared, the dispensing quantity is controlled to be the same as the volume of the chip dispensing position, too much or too little is avoided, the proper conductive glue type and solidification technological parameters are selected so as to meet the specific application requirements, the requirements are avoided, the impurity introduction and the impurity and the position deviation are avoided.
Referring to fig. 1, in step S3, electrical interconnection between the chip and the PCB substrate, and between the transition piece are realized by gold wires of different wire diameters, and electrical interconnection between the PCB substrate, between the conductors, between the substrate and the lead posts, and between the resistive-capacitive device and the substrate are realized by gold wires.
Specifically, firstly, the electrical interconnection between the chip and the PCB substrate and between the chip and the transition piece are realized through gold wires with different wire diameters, so that the gold wires can be accurately and firmly connected with each element, when the gold wires are welded, operators need to select proper gold wire diameters and lengths according to design drawings and process requirements, then, a special full-automatic bonding machine is used for accurately placing the gold wires on a preset position, in the welding process, the temperature and time are controlled so as to avoid poor welding caused by overheating or supercooling, meanwhile, the welding environment is required to be kept clean, impurities and pollutants are prevented from entering a welding area, strict inspection and testing are required after welding is completed, so that all the connections are ensured to meet quality standards, and the quality and the reliability of products are ensured by performing strict inspection and testing after the welding is completed.
Referring to fig. 1, in step S4, the assembled PCB substrate is encapsulated by using a molding compound, and the encapsulation is composed of material-proofing, mold cleaning, mold wetting, plasma cleaning, plastic encapsulation and post-curing, and the specific operations are as follows:
the material is awakened, namely the plastic package material is placed into a constant temperature and humidity box for preheating, the temperature is controlled to be 15-25 ℃, and the humidity is 30-60%;
Cleaning the mould, namely cleaning the surface of the mould by using a cleaning adhesive tape;
The mould is moistened, namely the mould surface is cleaned by using a mould moistening adhesive tape;
plasma cleaning, namely performing surface treatment on the PCB substrate by using plasma cleaning equipment to remove oxides and organic matters on the surface;
plastic packaging, namely putting the preheated plastic packaging material into a die, and wrapping the plastic packaging material on a PCB substrate through an injection molding process;
And (3) post-curing, namely placing the PCB subjected to plastic package into an oven for high-temperature curing, wherein the temperature of the oven is 100-180 ℃ and the duration is 2-8 hours.
Specifically, the plastic package material is placed into a constant temperature and humidity box for preheating, the temperature is controlled to be 15-25 ℃, and the humidity is controlled to be 30-60%. The step ensures that the plastic packaging material has good fluidity and formability in the subsequent processing process, avoids the material performance problem caused by improper temperature or humidity, and uses the cleaning adhesive tape to clean the surface of the die. The method is crucial in the step, because any residues can influence the bonding degree of the plastic package material and the mold, so that defects appear in a finished product, the mold surface is cleaned by using a mold wetting adhesive tape, materials such as metal soap, stearic acid, oleic acid, organic phosphorous acid, silicone oil and the like can be used as a release agent, the adhesion force between the plastic package material and the mold can be reduced by using the release agent, subsequent mold opening and piece taking are facilitated, meanwhile, the surface quality of a plastic package body is guaranteed, the surface treatment is carried out on a PCB substrate by using plasma cleaning equipment, and the surface oxide and organic matters are removed by using a radio frequency plasma surface treatment machine PR80L as the model of the plasma cleaning equipment. The step can improve the binding force between the plastic packaging material and the PCB substrate and enhance the packaging reliability; the method comprises the steps of putting a preheated plastic packaging material into a mold, wrapping the plastic packaging material on a PCB substrate through an injection molding process, wherein the injection molding is a core step of the plastic packaging process, and needs to accurately control parameters such as temperature, pressure, time and the like so as to ensure the quality and performance of a plastic packaging body, putting the plastic packaged PCB into an oven for high-temperature curing, wherein the temperature of the oven is 100-180 ℃ for 2-8 hours, and the curing process can fully crosslink the plastic packaging material to improve the mechanical strength and the thermal stability of the plastic packaging material.
Referring to fig. 1, in step S5, the plastic-packaged whole board product is stuck on the UV film, the UV film is uniformly and tightly stuck on the surface of the plastic-packaged whole board product by lightly rolling from the center to the periphery with a roller under a proper pressure, so that the fixed plastic-packaged whole board product is not shifted in the cutting process, the cutting process is that the plastic-packaged whole board product is cut into single products by using a circular diamond blade on a cutting path of a PCB substrate, and a back bonding pad of the product is protected by adopting a customized polyamide high-temperature adhesive tape.
Specifically, the size of the UV film is ensured to be enough to cover the whole plastic-packaged PCB, proper margin is reserved, the surface of the UV film is cleaned, no dust, greasy dirt or other impurities are ensured to influence the laminating effect, the plastic-packaged PCB is placed on a clean workbench, the flat and bending-free surface is ensured, the UV film is carefully paved on the plastic-packaged PCB to avoid generating bubbles or wrinkles, the UV film can be gradually spread from one end to the other end, a roller with proper weight is selected to ensure that enough pressure can be applied to tightly laminate the UV film, the plastic-sealed layer or the PCB substrate is not damaged, the center is slightly rolled to the periphery, the UV film is ensured to be uniformly laminated on the plastic-packaged PCB, the utility model discloses a PCB board, including the cutting machine, the cutting machine is equipped with the cutting machine, keep steadily during the roll extrusion, avoid hard too hard to lead to UV membrane to break or shift, ensure that the UV membrane laminates completely after, whether the inspection has not laminate inseparable region, can roll gently with the cylinder if necessary, place the PCB board that is fixed on the workstation of cutting machine, ensure its position is right and firm, use circular diamond blade, cut completely along the cutting path on the PCB base plate, keep the blade sharp during the cutting, and control good cutting speed, in order to ensure cutting quality, in the cutting process, observe the cutting condition, if abnormal should shut down in time the inspection, after the cutting is accomplished, whether each individual product cuts completely, burr or damage is not examined.
Referring to fig. 1 and 3, in step B1 of step S6, the prepared plastic package integrated circuit is put into a perhydro polysilazane solution for surface modification treatment, wherein the mass fractions of various substances in the solution are that the perhydro polysilazane is 5-20%, oxide filler is 0.5-3%, amine catalyst is 0.03-0.1%, alkane solvent is 80-95%, leveling additive is 0.001-0.005%, the sample is taken out after being soaked for 10-100S, and after the solvent volatilizes, the solution is transferred to a drying oven for curing the coating, the curing temperature is 80-150 ℃ for 1-5 h, and the thickness of the sion coating is about 1um-5um.
Specifically, the plastic package integrated circuit is put into a perhydro polysilazane solution for surface modification treatment. The mass fraction of various substances in the solution is 5% of perhydro polysilazane, 1% of oxide filler, 0.05% of amine catalyst, 93.949% of alkane solvent and 0.001% of leveling additive. And (3) taking out the sample after soaking for 30 seconds, and transferring the sample to a drying oven to cure the coating after the solvent volatilizes, wherein the curing temperature is 120 ℃ and the curing time is 2 h.
Referring to fig. 1 and 3, in step B2 of step S6, the surface-modified plastic-packaged integrated circuit is subjected to deposition of a SiO2 layer by a sputtering method to form a composite atomic oxygen protective film layer, wherein the sputtering pressure and the power are respectively 0.30-0.5 Pa and 200-600W, the sputtering time is 10-50 min, and the film thickness of the corresponding composite atomic oxygen protective film layer is 70-300nm.
Specifically, a radio frequency magnetron sputtering method is selected to prepare a SiO2 layer, the sputtering pressure and the power are respectively 0.35 Pa and 300W, the sputtering time is 25 min, and the thickness of the corresponding film layer is 70-80 nm.
Referring to fig. 1 and 3, in step B3 in step S6, the annealing temperature of the annealing treatment of the composite atomic oxygen protective film layer is 120 ℃ to 150, and the annealing time is 1h to 3h.
Specifically, the prepared SiON/SiO2 composite atomic oxygen protective silicon film layer is subjected to atmospheric annealing at 120 ℃ for 1h hours, the whole coating and annealing process is carried out in a dust-free or dust-free environment so as to avoid the influence of impurity pollution on the quality of the composite film layer, and meanwhile, quality inspection is carried out after each key step, wherein the indexes comprise uniformity, thickness, adhesive force and the like of the coating so as to ensure that the quality of the product meets the requirements.
The embodiment of the application is implemented by pre-coating solder paste on the bonding pads of the circuit board and attaching SMT components, and then completing the welding process by using a conveying system and a temperature area of reflow soldering equipment. The step ensures high-precision and high-efficiency electronic component assembly, improves production efficiency and product quality, and ensures mechanical fixation and electrical connection by fixing the chip on the PCB substrate through conductive adhesive. The step simplifies the production flow, reduces the process steps, improves the production efficiency, and realizes the electrical interconnection between the chip and each component such as the substrate by using the gold wires with different wire diameters. The gold wire bonding provides reliable electrical connection, is suitable for high-density integrated circuits, is beneficial to improving the performance and reliability of the circuits, and protects the internal circuits from the external environment by packaging the PCB with plastic packaging materials. The plastic package material can provide physical protection to prevent moisture, dust and other corrosive substances from damaging a circuit, the whole plate product is fixed through a UV film, and the whole plate product is cut into single products by using a round diamond blade, so that the preparation of the plastic package integrated circuit is completed. This step ensures product integrity and consistency and coats the plastic packaged integrated circuit.
The coating of the integrated circuit composite film comprises three parts of surface modification, deposition of a SiO2 layer by a sputtering method and annealing treatment of a composite silicon film layer, namely, placing the plastic package integrated circuit into a perhydro polysilazane solution for surface modification treatment. The mass fraction of various substances in the solution is 5% of perhydro polysilazane, 1% of oxide filler, 0.05% of amine catalyst, 93.949% of alkane solvent and 0.001% of leveling additive. And taking out the sample after soaking for 30s, transferring the sample to a drying oven to cure the coating after the solvent volatilizes, wherein the curing temperature is 120 ℃ and the time is 2h, and depositing a SiO2 layer on the surface-modified plastic package integrated circuit by adopting a sputtering method to form the composite atomic oxygen protective film layer. The sputtering pressure and the power are respectively 0.30-0.5 Pa and 200-600W, the sputtering time is 10-50 min, the corresponding film thickness is 70-300 nm, and the plastic package integrated circuit coated with the composite film needs annealing treatment. The annealing temperature is 120 ℃ to 150, the annealing time is 1h h to 3h, after the annealing is finished, atomic oxygen ground simulation equipment is adopted to carry out atomic oxygen ground simulation test on the SiON/SiO2 composite atomic oxygen protective silicon film layer, the atomic oxygen energy is about 5 eV, the atomic oxygen flux density is 0.96 multiplied by 1016 atom/cm < 2 >. S, the exposure time is 121.5 h, the atomic oxygen accumulated flux is 4.2 multiplied by 1021 atom/cm < 2 >, the surface of the SiON/SiO2 composite film layer has no crack through cold and hot circulation test, and the bonding performance of the SiON/SiO2 composite film layer and the plastic package integrated circuit is good.
The embodiments of the present application are all preferred embodiments of the present application, and are not intended to limit the scope of the present application, wherein like reference numerals are used to refer to like elements throughout. Therefore, all equivalent changes according to the structure, shape and principle of the present application should be covered in the protection scope of the present application.
Claims (10)
1. The preparation method of the integrated circuit resistant to the space environment is characterized by comprising the following steps of:
S1, a reflow soldering process, namely, pre-coating solder paste on a bonding pad of a circuit board, attaching SMT components, and then completing a soldering process by utilizing a conveying system and a temperature area of reflow soldering equipment;
S2, a bonding procedure, namely fixing the chip on the PCB substrate by using conductive adhesive to ensure mechanical fixation and electrical connection;
S3, a bonding procedure, namely realizing the electrical interconnection between each component such as the chip and the substrate by using gold wires with different wire diameters;
s4, a plastic packaging procedure, namely packaging the PCB board through plastic packaging materials;
S5, a dicing procedure, namely fixing the whole plate product through a UV film, and cutting the whole plate product into single products by using a round diamond blade to finish the preparation of the plastic package integrated circuit;
s6, coating the composite film, namely coating the plastic package integrated circuit, wherein the coating process is as follows:
b1, surface modification to form SiON coating;
b2, depositing by a sputtering method to form a SiO2 layer, wherein the SiON coating and the SiO2 layer form a composite atomic oxygen protective film layer;
And B3, annealing the composite atomic oxygen protective film layer.
2. A method for preparing an integrated circuit resistant to space environment as recited in claim 1, wherein in step S1, a proper amount and proper form of solder paste is coated on a bonding pad of a circuit board in advance, then SMT components are pasted to corresponding positions to fix the SMT components through the solder paste, then the circuit board on which the SMT components are pasted is put into reflow soldering equipment, and a conveying system drives the circuit board to solder the SMT components onto a printed board through each set temperature area in the reflow soldering equipment.
3. The method for manufacturing a space-tolerant integrated circuit according to claim 2, wherein the solder paste is subjected to the following steps in vacuum reflow:
A1, preheating, namely heating from room temperature to 100-180 ℃ and keeping the temperature within 5 ℃ per minute
A2, preserving heat, namely maintaining the temperature in the reflow soldering equipment at 150-200 ℃ for 3-5 minutes, and slowly raising the temperature to 200 ℃;
A3, refluxing, namely quickly heating to 220-280 ℃, keeping the temperature for 60-90 seconds, and melting the solder paste into a liquid state to flow along the contact surface of the SMT component to form welding spots
A4, cooling, namely reducing the temperature of the circuit board to below 100 ℃ at a rate of 3-6 ℃ per second, and naturally cooling to room temperature.
4. The method for manufacturing an integrated circuit resistant to a space environment according to claim 1, wherein in the step S2, a chip is fixed on a PCB substrate by a conductive adhesive, and the amount of the conductive adhesive dispensed each time is the same as the volume of the dispensing portion of the chip, so that the chip and the PCB substrate are mechanically fixed and electrically connected.
5. The method according to claim 1, wherein in step S3, the electrical interconnection between the chip and the PCB substrate and between the transition piece are realized by gold wires with different wire diameters, and the electrical interconnection between the PCB substrate, between the conductors, between the substrate and the lead posts, and between the resistive-capacitive device and the substrate are realized by the gold wires.
6. The method for manufacturing the integrated circuit resistant to the space environment according to claim 1, wherein in the step S4, the assembled PCB substrate is encapsulated by using a plastic molding compound, and the encapsulation comprises material waking, mold cleaning, mold wetting, plasma cleaning, plastic encapsulation and post-curing, and the specific operations are as follows:
a step of material awakening, which is to put the plastic package material into a constant temperature and humidity box for preheating, wherein the temperature is controlled to be 15-25 ℃ and the humidity is controlled to be 30-60%;
Cleaning the mould, namely cleaning the surface of the mould by using a cleaning adhesive tape;
The mould is moistened, namely the mould surface is cleaned by using a mould moistening adhesive tape;
Plasma cleaning, namely performing surface treatment on the PCB substrate by using plasma cleaning equipment to remove oxides and organic matters on the surface;
Plastic packaging, namely putting the preheated plastic packaging material into a die, and wrapping the plastic packaging material on the PCB substrate through an injection molding process;
and (3) post-curing, namely placing the PCB subjected to plastic package into an oven for high-temperature curing, wherein the temperature of the oven is 100-180 ℃ and the duration is 2-8 hours.
7. The method for manufacturing an integrated circuit resistant to a space environment according to claim 1, wherein in the step S5, the whole plastic-sealed board product is stuck on the UV film, the UV film is lightly rolled from the center to the periphery by using a roller with proper pressure, so that the UV film is uniformly and tightly stuck on the surface of the whole plastic-sealed board product, and thus the whole plastic-sealed board product is fixed from displacement during the cutting process, the cutting process is that a round diamond blade is used for completely cutting on the cutting path of the PCB substrate, the whole plastic-sealed board product is cut into single products, and the back bonding pad of the product is protected by a customized polyamide high-temperature adhesive tape.
8. The method for preparing the integrated circuit resistant to the space environment according to claim 1, wherein in the step B1 in the step S6, the prepared plastic package integrated circuit is put into a perhydro polysilazane solution for surface modification treatment, the mass fractions of various substances in the solution are 5-20% of perhydro polysilazane, 0.5-3% of oxide filler, 0.03-0.1% of amine catalyst, 80-95% of alkane solvent, 0.001-0.005% of leveling additive and 10-100 seconds of sample are taken out after the sample is soaked, the solution is transferred to a drying box for curing the coating after the solvent is volatilized, the curing temperature is 80-150 ℃, the SiON alkyl coating thickness is about 1um-5um.
9. The method for manufacturing an integrated circuit resistant to a space environment according to claim 1, wherein in step B2 in step S6, a SiO2 layer is deposited on the surface-modified plastic-packaged integrated circuit by a sputtering method to form a composite atomic oxygen protective film layer, the sputtering pressure and the power are respectively 0.30-0.5 Pa and 200-600W, the sputtering time is 10-50 min, and the film thickness of the corresponding composite atomic oxygen protective film layer is 70-300nm.
10. The method for manufacturing a space-environment-resistant integrated circuit according to claim 1, wherein in step B3 in step S6, the annealing temperature of the annealing treatment of the composite atomic oxygen protective film layer is 120 ℃ to 150, and the annealing time is 1h to 3h.
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| KR101563553B1 (en) * | 2015-04-17 | 2015-10-27 | (주)티에프테크 | The exterior surface of the protective film layer is also high hardness and a manufacturing method |
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| KR101563553B1 (en) * | 2015-04-17 | 2015-10-27 | (주)티에프테크 | The exterior surface of the protective film layer is also high hardness and a manufacturing method |
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