CN119392197A - A thin film deposition device based on automatic compensation function of target consumption - Google Patents
A thin film deposition device based on automatic compensation function of target consumption Download PDFInfo
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- CN119392197A CN119392197A CN202510000128.6A CN202510000128A CN119392197A CN 119392197 A CN119392197 A CN 119392197A CN 202510000128 A CN202510000128 A CN 202510000128A CN 119392197 A CN119392197 A CN 119392197A
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- thin film
- film deposition
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 32
- 238000001514 detection method Methods 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 7
- 230000013011 mating Effects 0.000 claims description 4
- 239000013077 target material Substances 0.000 abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 64
- 229910052786 argon Inorganic materials 0.000 description 32
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 16
- 238000009826 distribution Methods 0.000 description 5
- -1 argon ions Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种基于靶材消耗自动补偿功能的薄膜沉积设备，涉及薄膜沉积技术领域，包括有薄膜沉积设备主体和控制器，薄膜沉积设备主体外部设置有箱体，箱体内部安装有真空仓和控制器，真空仓内安装有承载台和多组靶材限定组件，真空仓上方设置有驱动电机和多组磁铁，真空仓内部底部安装有支撑平台和基台，支撑平台底部安装有调节组件和供气组件，调节组件与承载台连接，靶材限定组件之间设置有靶材块，靶材块与驱动电机配合，真空仓内部安装有多组检测组件，检测组件分别与驱动电机和调节组件配合，检测组件可检测晶圆表面，从而该装置使用时，能够根据晶圆呈现的状况，对供气组件、靶材进行补足。
The invention discloses a thin film deposition device based on an automatic compensation function for target material consumption, relates to the technical field of thin film deposition, and comprises a thin film deposition device body and a controller, wherein a box body is arranged outside the thin film deposition device body, a vacuum chamber and a controller are installed inside the box body, a bearing platform and a plurality of target material limiting components are installed inside the vacuum chamber, a driving motor and a plurality of magnets are arranged above the vacuum chamber, a supporting platform and a base are installed at the bottom of the vacuum chamber, an adjusting component and an air supply component are installed at the bottom of the supporting platform, the adjusting component is connected to the bearing platform, a target material block is arranged between the target material limiting components, the target material block cooperates with the driving motor, a plurality of detection components are installed inside the vacuum chamber, the detection components cooperate with the driving motor and the adjusting component respectively, the detection components can detect the surface of a wafer, so that when the device is used, the air supply component and the target material can be supplemented according to the condition presented by the wafer.
Description
Technical Field
The invention relates to the technical field of film deposition, in particular to film deposition equipment based on an automatic compensation function of target consumption.
Background
In the semiconductor manufacturing technology, in order to impart a certain characteristic to a material used, it is necessary to form a thin film on the surface of the material.
Modes of thin film deposition generally include physical vapor deposition;
When the existing thin film deposition equipment is used, when a wafer can be placed in a reaction chamber and deposition gas can be filled into the reaction chamber, the reaction chamber is heated by utilizing a heating disc, so that the gas entering the reaction chamber is deposited on the wafer to form a thin film, but when the existing thin film deposition equipment is used, the target naturally generates loss, but after the target generates loss, when the target is still used for holding quantitative output, the target can not be ensured to release enough particles, and when the target can not release enough particles, the thin film deposition process is increased, and further the work efficiency is reduced.
Disclosure of Invention
The invention aims to provide a thin film deposition device based on an automatic target consumption compensation function, so as to solve the problems in the prior art.
In order to achieve the aim, the thin film deposition equipment based on the automatic compensation function of target consumption comprises a thin film deposition equipment main body and a controller, wherein a box body is arranged outside the thin film deposition equipment main body, a vacuum bin and the controller are arranged inside the box body, a bearing table and a plurality of groups of target limiting components are arranged inside the vacuum bin, a driving motor and a plurality of groups of magnets are arranged above the vacuum bin, a supporting platform and a base table are arranged at the bottom of the vacuum bin, an adjusting component and an air supply component are arranged at the bottom of the supporting platform, the adjusting component is connected with the bearing table, target blocks are arranged between the target limiting components, the target blocks are matched with the driving motor, a plurality of groups of detecting components are arranged inside the vacuum bin and are respectively matched with the driving motor and the adjusting component, and the detecting components can detect the surface of a wafer.
Further, the adjusting component comprises an adjusting motor, the adjusting motor is arranged at the bottom of the supporting platform, limiting grooves are respectively formed in the supporting platform and the upper portion of the base station, two groups of limiting grooves are formed in the output end of the adjusting motor, a driving wheel is arranged in the limiting groove on the supporting platform, a driven wheel is arranged in the limiting groove on the supporting platform, the driven wheel is matched with the driving wheel, an adjusting cylinder is arranged above the driven wheel, the output end of the adjusting cylinder is arranged in the limiting groove on the base station through a bearing, the output end of the adjusting cylinder is connected with the bearing station, and the adjusting motor and the adjusting cylinder are respectively connected with a controller.
Further, the plummer is installed in the vacuum storehouse through branch, the plummer is connected with branch through the bearing, plummer top is provided with the loading groove, plummer outside middle part is provided with the isolated bearing, the embedded installation in plummer of isolated bearing, isolated bearing externally mounted has the separation film, the separation film other end is connected with the plummer.
Further, the baffle is arranged above the vacuum bin, the driving motor is arranged on the baffle, the driving groove is formed in the baffle, the driving disc is arranged at the output end of the driving motor and is positioned inside the driving groove, a plurality of groups of driving magnets are arranged on the driving disc, and the driving magnets are matched with the target blocks.
Further, the target block is provided with a mounting groove, a matching disc is mounted in the mounting groove, the matching disc is matched with the driving disc, the matching disc is provided with a plurality of groups of matching magnets, and the matching magnets are matched with the driving magnets.
Further, the S pole orientation and the N pole orientation of the driving magnet are respectively staggered on the driving disc, and the S pole orientation and the root orientation of the matching magnet are respectively staggered on the matching disc.
Further, the target limiting assembly comprises a plurality of groups of fixing rods, grooves are formed in the bottoms of the fixing rods, limiting rods are installed between the grooves through bearings, limiting cylinders are installed in the fixing rods, the output ends of the limiting cylinders are matched with the limiting rods, grooves are formed in one surface, in contact with the target block, of each limiting rod, and balls are arranged in the grooves and in contact with the target block.
Further, the air feed subassembly is including air feed jar and vacuum pump, the air feed jar is installed in the box inside, flow sensor is installed to the air feed jar output, the air feed jar output is connected with the vacuum storehouse, the vacuum pump is connected with the vacuum storehouse, air feed jar and vacuum pump are connected with the controller respectively.
Further, the detection assembly comprises two groups of limiting plates, an X-ray diffractometer is arranged between the two groups of limiting plates, the X-ray diffractometer is arranged between the two groups of limiting plates through a bearing, an adjusting motor is arranged outside the limiting plates, the adjusting motor is connected with the X-ray diffractometer, and the X-ray diffractometer is connected with the controller.
Further, the outside observation window and the control panel that is provided with of box, but the vacuum storehouse is observed to the observation window, control panel is connected with the controller, the controller is installed in the bottom half.
Compared with the prior art, the invention has the beneficial effects that:
1. When the device is used, enough and uniform sediment can be covered on a wafer, so that a finished product is more perfect, and when the device is used, argon and a target are in a relatively balanced state, and the two are balanced, so that the sediment can be always kept in a certain amount, and further the effect of taking the device while the device is still in use is ensured;
2. When the target material of the device is used, the target material can be uniformly regulated according to the distribution of target atoms, and when the detection assembly detects that the sediment on the wafer is relatively dispersed and uneven, the target atoms falling off by the target material are not uniform enough, and then the driving disc can be driven by the driving motor, and the driving disc and the matching disc are mutually matched because the driving disc and the matching disc are arranged on the target material block, and then the target material block can be driven to rotate when the driving motor rotates, so that the distribution of the target atoms is regulated, and the deposition of the wafer film is assisted;
3. When the target atoms on the wafer are respectively uneven, the bearing table can be adjusted through the adjusting component, more target atoms can be uniformly received through the adjusting bearing table, the target atoms on the wafer can be sufficiently and uniformly covered on the bearing table, and the bearing table can be better received when the bearing table is specifically used by driving the driving wheel through the adjusting power machine, the driving wheel is meshed with the driven wheel, the driven wheel can be driven to rotate around the driving wheel in the limiting groove, and the driven wheel can rotate around the driving wheel because the adjusting air cylinder on the driven wheel is connected with the bearing table, and the bearing table can be driven to rotate together.
Drawings
FIG. 1 is a schematic diagram of the overall axial structure of the present invention;
FIG. 2 is a schematic cross-sectional view of the present invention;
FIG. 3 is a schematic view of the structure above the base station of the present invention;
FIG. 4 is a schematic view of the structure above the support platform of the present invention;
FIG. 5 is a schematic view of the structure of the present invention;
FIG. 6 is a schematic cross-sectional view of a target defining assembly of the present invention;
FIG. 7 is a schematic diagram of the structure of a target block according to the present invention;
FIG. 8 is an enlarged schematic view of the invention at "A" in FIG. 5;
fig. 9 is an enlarged schematic view of the present invention at "B" in fig. 5.
In the figure, 1, a main body of the thin film deposition equipment, 11, a box body, 12, a vacuum bin, 121, a supporting platform, 122, a base table, 13, a bearing table, 131, a bearing groove, 132, an isolation bearing, 133, a separation film, 14, a driving motor, 141, a driving disk, 15, a baffle, 151, a driving groove, 2, a target limiting component, 21, a fixed rod, 22, a limiting rod, 221, a ball, 23, a limiting cylinder, 3, an adjusting component, 31, an adjusting motor, 32, a driving wheel, 33, a driven wheel, 34, an adjusting cylinder, 4, an air supply component, 41, an air supply tank, 42, a vacuum pump, 43, a flow sensor, 5, a target block, 51, a mounting groove, 52, a matching disk, 6, a detection component, 61, a limiting plate, 62 and an X-ray diffractometer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
1-9, The invention provides a thin film deposition equipment technical scheme based on an automatic compensation function of target consumption, which comprises a thin film deposition equipment main body 1 and a controller, wherein a box 11 is arranged outside the thin film deposition equipment main body 1, a vacuum bin 12 and the controller are arranged inside the box 11, a bearing table 13 and a plurality of groups of target limiting components 2 are arranged inside the vacuum bin 12, a driving motor 14 and a plurality of groups of magnets are arranged above the vacuum bin 12, a supporting platform 121 and a base 122 are arranged at the bottom of the vacuum bin 12, an adjusting component 3 and an air supply component 4 are arranged at the bottom of the supporting platform 121, the adjusting component 3 is connected with the bearing table 13, a target block 5 is arranged between the target limiting components 2, the target block 5 is matched with the driving motor 14, a plurality of groups of detecting components 6 are arranged inside the vacuum bin 12, the detecting components 6 are respectively matched with the driving motor 14 and the adjusting component 3, and the detecting components 6 can detect the surface of a wafer;
When the device is used, when a wafer is placed on the bearing table 13, the vacuum pump 42 pumps out air in the vacuum chamber 12, the air supply assembly 4 is started, the air supply assembly 4 releases argon so that the argon can be contacted with the target, and as the target is connected with the anode, plasma can be generated in the area at the bottom of the target in the vacuum chamber 12, the argon enters the vacuum chamber 12 and then contacts with the plasma, argon atoms in the argon are contacted with electrons and then generate argon positive ions, the surface of the target can drop out of the target atoms after the argon positive ions collide with the target, the target atoms are deposited on the wafer on the bearing table 13, the detection assembly 6 of the device can detect the wafer on the bearing table 13, and by means of X-ray diffraction of the wafer, whether the target atoms deposited on the wafer are uniform or not can be known through the controller, when the target atoms are uniformly deposited on the wafer, the generation of the target atoms is enough, and the distribution of the target atoms is uniform, and the wafer is optimal;
When the diffraction pattern of the diffraction of the detection component 6 is uneven, the target atoms on the surface of the wafer are not even enough, so that the controller adjusts the equipment according to the supply of argon, the electrified intensity of the target and the distribution of the target atoms during deposition, when the supply of argon is less, the contact of the argon with electrons in the plasma is reduced, and then the formed positive argon ions are less, and then the target atoms generated by the target are less, at the moment, the supply of argon can be increased, and when the voltage connected with the target is smaller, a plurality of the argon atoms are in contact with a small number of electrons to form a small number of positive argon ions, and then after the target is contacted with the target, the generated target atoms are still less, and then the thin film deposition is carried out on the wafer unevenly, and because the target is gradually consumed, and then the voltage of the target is stably and less increased under the even supply of argon, the generation of the target atoms can be ensured, and then the stable and the stable generation of the target atoms can be carried out on the wafers, and the wafer can be carried by the carrying table, and the deposition device can be carried out on the wafer according to the conditions that the uniform deposition is carried by the wafer or the uneven, and the deposition table 13 can be carried out, and the deposition is carried by the wafer is carried by the device.
As shown in fig. 4-5 and 8, in this embodiment, specifically, the adjusting assembly 3 includes an adjusting motor 31, the adjusting motor 31 is mounted at the bottom of the supporting platform 121, limiting grooves are respectively disposed above the supporting platform 121 and the base 122, two groups of limiting grooves are respectively disposed above the supporting platform 121 and the base 122, a driving wheel 32 is mounted at an output end of the adjusting motor 31, a driven wheel 33 is mounted in a limiting groove on the supporting platform 121, the driven wheel 33 is matched with the driving wheel 32, an adjusting cylinder 34 is mounted above the driven wheel 33, an output end of the adjusting cylinder 34 is mounted in a limiting groove on the base 122 through a bearing, an output end of the adjusting cylinder 34 is connected with the bearing table 13, and the adjusting motor 31 and the adjusting cylinder 34 are respectively connected with a controller;
When the adjusting component 3 of the device is used, the bearing table 13 can be adjusted to rotate, or the bearing table 13 is adjusted to incline to a certain direction, when the adjusting component 3 is specifically used, the adjusting motor 31 can drive the driving wheel 32 to rotate, and because the driving wheel 32 is matched with the driven wheel 33, the driven wheel 33 can be driven to rotate, when the driven wheel 33 rotates, the adjusting component can move in the limiting groove along with the limiting groove, and because the driven wheel 33 is provided with the adjusting cylinder 34, the adjusting cylinder 34 is connected with the bearing table 13, and when the driven wheel 33 rotates around the driving wheel 32, the bearing table 13 can be driven to rotate at the same time, and the telescopic cylinder can pull the bearing table 13 to incline to one direction, so that film deposition can be assisted.
As shown in fig. 2-3 and 8, in this embodiment, specifically, a bearing table 13 is installed in a vacuum bin 12 through a supporting rod, the bearing table 13 is connected with the supporting rod through a bearing, a bearing groove 131 is arranged above the bearing table 13, an isolation bearing 132 is arranged in the middle of the outer part of the bearing table 13, the isolation bearing 132 is installed on the bearing table 13 in an embedded manner, a barrier film 133 is installed outside the isolation bearing 132, the other end of the barrier film 133 is connected with a base 122, and the barrier film 133 has a certain elasticity;
the plummer 13 of the device can bear, support the wafer when using, during the concrete use, plummer 13 supports the wafer through the carrier groove 131 of top, and plummer 13 outside is because being connected with separation film 133, and then can prevent that the target atom from depositing vacuum storehouse 12 bottom, and because separation film 133 one end is connected with isolated bearing 132, and then when plummer 13 is rotating, separation film 133 is fixed because the other end, and then can stimulate isolated bearing 132 and rotate on plummer 13, and because separation film 133 has certain elasticity, and then when telescopic cylinder pulls plummer 13, have elastic separation film 133 can prevent that plummer 13 angle modulation from appearing splitting, crushing.
As shown in fig. 5 and 9, in this embodiment, specifically, a partition plate 15 is disposed above the vacuum chamber 12, the partition plate 15 is provided with a driving motor 14, a driving groove 151 is formed on the partition plate 15, a driving disk 141 is installed at an output end of the driving motor 14, the driving disk 141 is located inside the driving groove 151, and a plurality of groups of driving magnets are disposed on the driving disk 141 and are matched with the target block 5;
the main function of the partition 15 is to limit the driving motor 14, so as to limit the position of the driving motor 14 and the position of the output end of the driving motor 14, and when the driving motor 14 is specifically used, the driving disk 141 can be driven to rotate, and the driving disk 141 can rotate in the driving groove 151, and because the driving magnet is matched with the target block 5, the driving disk 141 can drive the target block 5 to rotate under the driving of the driving motor 14, so as to assist the deposition uniformity of target atoms.
As shown in fig. 7, in this embodiment, specifically, a mounting groove 51 is provided on the target block 5, a matching disc 52 is installed in the mounting groove 51, the matching disc 52 is matched with the driving disc 141, the matching disc 52 is provided with a plurality of groups of matching magnets, and the matching magnets are matched with the driving magnets;
Because the mounting groove 51 is arranged on the target block 5, the matching disc 52 can be associated with the target block 5, and because the matching disc 52 is matched with the driving disc 141, when the driving motor 14 drives the driving disc 141 to rotate, the matching disc 52 is driven to rotate simultaneously because of the interaction between the driving disc 141 and the matching disc 52, and the matching disc 52 is arranged on the target block 5, the target block 5 can be driven to synchronously rotate, so that target atoms can be deposited in an auxiliary mode when falling off.
As shown in fig. 7 and 9, in this embodiment, specifically, the S-pole orientation and the N-pole orientation of the driving magnets are respectively staggered on the driving disk 141, and the S-pole orientation and the root orientation of the mating magnets are respectively staggered on the mating disk 52;
because the driving magnet and the matching magnet are attracted to each other, and because the driving magnet and the matching magnet are distributed identically, the driving magnet and the matching magnet can generate stronger attraction force, so that the power transmitted by the driving motor 14 can be transmitted to the matching disc 52 under extremely low loss, and the whole target block 5 is driven to rotate.
As shown in fig. 6, in this embodiment, specifically, the target defining assembly 2 includes a plurality of groups of fixing rods 21, grooves are provided at the bottoms of the fixing rods 21, a defining rod 22 is installed between the grooves through bearings, a limiting cylinder 23 is installed inside the fixing rods 21, an output end of the limiting cylinder 23 is matched with the defining rod 22, a slot is provided on a surface of the defining rod 22 contacting with the target block 5, a ball 221 is provided inside the slot, and the ball 221 contacts with the target block 5;
the target limiting assembly 2 of the device can limit targets when in use, the targets can be installed only by opening the target limiting assembly 2 when the targets are replaced, and the target limiting assembly 2 also plays a role in assisting the rotation of the target block 5, so that the device can rotate the targets when required, and target atoms falling off from the surfaces of the targets can be fully deposited on the wafer.
As shown in fig. 2 to 5, in this embodiment, specifically, the air supply assembly 4 includes an air supply tank 41 and a vacuum pump 42, the air supply tank 41 is installed inside the box 11, an output end of the air supply tank 41 is installed with a flow sensor 43, an output end of the air supply tank 41 is connected with the vacuum bin 12, the vacuum pump 42 is connected with the vacuum bin 12, and the air supply tank 41 and the vacuum pump 42 are respectively connected with the controller;
The air supply assembly 4 of the device can inject argon into the vacuum bin 12, redundant air in the vacuum bin 12 can be pumped out through the vacuum pump 42, so that the vacuum bin 12 is in a vacuum state, when the device is specifically used, the output end of the air supply tank 41 can inject argon into the vacuum bin 12, the argon can also pass through the flow sensor 43, the flow sensor 43 can detect the passing argon, the controller can conveniently adjust the argon subsequently, and the follow-up work is assisted.
As shown in fig. 2 and 5, in this embodiment, specifically, the detection assembly 6 includes two sets of limiting plates 61, an X-ray diffractor 62 is installed between the two sets of limiting plates 61, the X-ray diffractor 62 is installed between the two sets of limiting plates 61 through a bearing, an adjusting motor is installed outside the limiting plates 61, the adjusting motor is connected with the X-ray diffractor 62, and the X-ray diffractor 62 is connected with a controller;
The detection module 6 can detect the surface of the wafer and detect the target atoms deposited on the surface of the wafer when in use, and can diffract the wafer through the X-ray diffractometer 62 when in specific use, and can form a map through the controller, and can know whether the target atoms on the surface of the wafer reach the requirement or not and whether the target atoms are uniform or not according to the map.
In this embodiment, as shown in fig. 1, specifically, an observation window and a control panel are disposed outside the box 11, the observation window can observe the vacuum chamber 12, the control panel is connected with a controller, and the controller is installed at the bottom of the box 11;
when the device is used, the operation inside the machine can be observed in real time through the observation window, and the device can be controlled through the control panel, so that a worker can control the machine better.
When the device is used, when a wafer is placed on the bearing table 13, the vacuum pump 42 pumps out air in the vacuum chamber 12, the air supply assembly 4 is started, the air supply assembly 4 releases argon so that the argon can be contacted with a target, and as the target is connected with an anode, plasma can be generated in the area at the bottom of the target in the vacuum chamber 12, the argon enters the vacuum chamber 12 and then contacts with the plasma, argon atoms in the argon are contacted with electrons and then generate argon positive ions, the argon positive ions collide with the target, the target atoms fall off from the surface of the target, the target atoms are deposited on the wafer on the bearing table 13, the detection assembly 6 of the device can detect the wafer on the bearing table 13, and the diffraction pattern can be formed through the controller by the wafer, so that whether the target atoms deposited on the wafer are uniform or not can be known through the diffraction pattern, and when the target atoms are uniformly deposited on the wafer, the generation of the target atoms is enough, and the uniform distribution of the target atoms is the wafer is optimal;
When the diffraction pattern of the diffraction of the detection component 6 is uneven, the target atoms on the surface of the wafer are not even enough, so that the controller adjusts the equipment according to the supply of argon, the electrified intensity of the target and the distribution of the target atoms during deposition, when the supply of argon is less, the contact of the argon with electrons in the plasma is reduced, and then the formed positive argon ions are less, and then the target atoms generated by the target are less, at the moment, the supply of argon can be increased, and when the voltage connected with the target is smaller, a plurality of the argon atoms are in contact with a small number of electrons to form a small number of positive argon ions, and then after the target is contacted with the target, the generated target atoms are still less, and then the thin film deposition is carried out on the wafer unevenly, and because the target is gradually consumed, and then the voltage of the target is stably and less increased under the even supply of argon, the generation of the target atoms can be ensured, and then the stable and the stable generation of the target atoms can be carried out on the wafers, and the wafer can be carried by the carrying table, and the deposition device can be carried out on the wafer according to the conditions that the uniform deposition is carried by the wafer or the uneven, and the deposition table 13 can be carried out, and the deposition is carried by the wafer is carried by the device.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. The thin film deposition equipment based on the automatic compensation function of target consumption comprises a thin film deposition equipment main body (1) and a controller, and is characterized in that the thin film deposition equipment main body (1) is externally provided with a box body (11), a vacuum bin (12) and the controller are internally installed in the box body (11), a bearing table (13) and a plurality of groups of target limiting components (2) are installed in the vacuum bin (12), a driving motor (14) and a plurality of groups of magnets are arranged above the vacuum bin (12), a supporting platform (121) and a base (122) are installed at the inner bottom of the vacuum bin (12), an adjusting component (3) and an air supply component (4) are installed at the bottom of the supporting platform (121), the adjusting component (3) is connected with the bearing table (13), a target block (5) is arranged between the target limiting components (2), a plurality of groups of detection components (6) are installed in the vacuum bin (12), and the detection components (6) are respectively matched with the driving motor (14) and the detection components (6) and the detection components can detect the surface of wafers (6).
2. The thin film deposition equipment based on the target consumption automatic compensation function according to claim 1, wherein the adjusting assembly (3) comprises an adjusting motor (31), the adjusting motor (31) is installed at the bottom of a supporting platform (121), limiting grooves are respectively formed in the upper portion of the supporting platform (121) and the upper portion of a base table (122), a driving wheel (32) is installed at the output end of the adjusting motor (31), a driven wheel (33) is installed in the limiting grooves in the supporting platform (121), the driven wheel (33) is matched with the driving wheel (32), an adjusting cylinder (34) is installed above the driven wheel (33), the output end of the adjusting cylinder (34) is installed in the limiting grooves in the base table (122) through a bearing, the output end of the adjusting cylinder (34) is connected with a bearing table (13), and the adjusting motor (31) and the adjusting cylinder (34) are respectively connected with a controller.
3. The thin film deposition equipment based on the target consumption automatic compensation function according to claim 2, wherein the bearing table (13) is installed in the vacuum bin (12) through a supporting rod, the bearing table (13) is connected with the supporting rod through a bearing, a bearing groove (131) is formed above the bearing table (13), an isolation bearing (132) is arranged in the middle of the outer portion of the bearing table (13), the isolation bearing (132) is installed on the bearing table (13) in an embedded mode, a separation film (133) is installed on the outer portion of the isolation bearing (132), and the other end of the separation film (133) is connected with the base table (122).
4. The thin film deposition equipment based on the automatic compensation function of target consumption according to claim 3, wherein a partition plate (15) is arranged above the vacuum bin (12), the driving motor (14) is arranged on the partition plate (15), a driving groove (151) is formed in the partition plate (15), a driving disc (141) is arranged at the output end of the driving motor (14), the driving disc (141) is positioned in the driving groove (151), a plurality of groups of driving magnets are arranged on the driving disc (141), and the driving magnets are matched with the target block (5).
5. The thin film deposition equipment based on the automatic compensation function of target consumption according to claim 4, wherein the target block (5) is provided with a mounting groove (51), a matching disc (52) is mounted in the mounting groove (51), the matching disc (52) is matched with the driving disc (141), the matching disc (52) is provided with a plurality of groups of matching magnets, and the matching magnets are matched with the driving magnets.
6. The thin film deposition apparatus with automatic target consumption compensation function according to claim 5, wherein the S-pole orientation and the N-pole orientation of the driving magnet are respectively staggered on the driving disk (141), and the S-pole orientation and the root orientation of the mating magnet are respectively staggered on the mating disk (52).
7. The thin film deposition equipment based on the automatic compensation function of target consumption according to claim 6, wherein the target limiting assembly (2) comprises a plurality of groups of fixing rods (21), grooves are formed in the bottoms of the fixing rods (21), limiting rods (22) are arranged between the grooves through bearings, limiting cylinders (23) are arranged in the fixing rods (21), the output ends of the limiting cylinders (23) are matched with the limiting rods (22), grooves are formed in one surface, in contact with the target block (5), of each limiting rod (22), balls (221) are arranged in the grooves, and the balls (221) are in contact with the target block (5).
8. The thin film deposition equipment based on the automatic target consumption compensation function according to claim 7, wherein the air supply assembly (4) comprises an air supply tank (41) and a vacuum pump (42), the air supply tank (41) is arranged inside the box body (11), a flow sensor (43) is arranged at the output end of the air supply tank (41), the output end of the air supply tank (41) is connected with the vacuum bin (12), the vacuum pump (42) is connected with the vacuum bin (12), and the air supply tank (41) and the vacuum pump (42) are respectively connected with the controller.
9. The thin film deposition equipment based on the target consumption automatic compensation function according to claim 8, wherein the detection assembly (6) comprises two groups of limiting plates (61), an X-ray diffractometer (62) is arranged between the two groups of limiting plates (61), the X-ray diffractometer (62) is arranged between the two groups of limiting plates (61) through a bearing, an adjusting motor is arranged outside the limiting plates (61), the adjusting motor is connected with the X-ray diffractometer (62), and the X-ray diffractometer (62) is connected with a controller.
10. The thin film deposition equipment based on the target consumption automatic compensation function according to claim 9, wherein an observation window and a control panel are arranged outside the box body (11), the observation window can observe the vacuum chamber (12), the control panel is connected with a controller, and the controller is arranged at the bottom of the box body (11).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN119932514A (en) * | 2025-04-07 | 2025-05-06 | 奥卓真空设备技术(珠海)有限公司 | A uniformity adjustable coating device |
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| CN105543792A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering device and magnetron sputtering method |
| CN111411342A (en) * | 2019-01-07 | 2020-07-14 | 长鑫存储技术有限公司 | Thin film deposition apparatus and control method of thin film deposition apparatus |
| CN114150287A (en) * | 2021-12-10 | 2022-03-08 | 深圳新声半导体有限公司 | Thin film deposition method and equipment |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105543792A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering device and magnetron sputtering method |
| CN111411342A (en) * | 2019-01-07 | 2020-07-14 | 长鑫存储技术有限公司 | Thin film deposition apparatus and control method of thin film deposition apparatus |
| CN114150287A (en) * | 2021-12-10 | 2022-03-08 | 深圳新声半导体有限公司 | Thin film deposition method and equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN119932514A (en) * | 2025-04-07 | 2025-05-06 | 奥卓真空设备技术(珠海)有限公司 | A uniformity adjustable coating device |
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