CN114150287A - Thin film deposition method and equipment - Google Patents

Abstract

The invention provides a method and equipment for film deposition. The method includes: performing multiple step-by-step deposition on a wafer; between the step-by-step depositions, performing multi-point pre-deposition thickness detection to obtain the multi-point pre-deposition thickness ; Analyze the pre-deposition uniformity according to the multi-point pre-deposition thickness; judge whether the pre-deposition uniformity meets the requirements, if not, adjust the local deposition rate of the detected post-deposition points according to the uneven point distribution, The uniformity compensation of the deposition thickness is performed in the subsequent deposition that continues after the inspection. The equipment includes a PVD deposition chamber, an optical test chamber and a controller; it is used for the wafer deposition process using the aforementioned method. The invention divides the deposition process of the same deposition layer film into multiple step-by-step depositions, and performs multi-point pre-deposition thickness detection and uniformity compensation between the step-by-step depositions, so that the thickness of the deposited layer film after deposition is uniform. Simplify the follow-up production process, improve production efficiency and reduce production costs.

Description

Thin film deposition method and equipment

technical field

The invention relates to the technical field of deposition process and equipment in the preparation of semiconductor devices, in particular to a thin film deposition method and equipment.

Background technique

The wafer deposition process is one of the most commonly used processes in the preparation of semiconductor devices. At present, the thin film deposition machines used in the wafer deposition process, as shown in Figure 1, are indiscriminately depositing a certain thickness on the wafer at one time. (design thickness) of the film.

However, the disadvantages of the traditional deposition method are: subject to the hardware equipment of the machine, with the increase of the use time of the equipment, the equipment will be worn out, or affected by other factors, which will lead to the deterioration of the uniformity of the deposited film, resulting in the loss of the silicon wafer. The uneven thickness has an adverse effect on the processing of the wafer, which reduces the quality of the product and reduces the yield of the product; in order to prevent this from happening, it is often necessary to increase the surface repair or compensation process of the wafer in the subsequent process, so that the The subsequent production process is complicated, which reduces the production efficiency and increases the production cost.

SUMMARY OF THE INVENTION

In order to solve the above-mentioned technical problems, the present invention provides a thin film deposition method, comprising the following steps:

S100 performs multiple step-by-step depositions on wafers;

S200 performs multi-point pre-deposition thickness detection between the step-by-step deposition, and obtains the multi-point pre-deposition thickness;

S300 analyzes the pre-deposition uniformity according to the multi-point pre-deposition thickness;

S400 judges whether the deposition uniformity of the previous step meets the requirements, and if not, executes step S500;

S500 adjusts the local deposition rate of each point of the detected subsequent deposition according to the uneven point distribution, and performs uniformity compensation of the deposition thickness in the subsequent subsequent deposition after the detection.

Optionally, in step S200, the deposition thickness detection adopts an optical measurement method, irradiating each point with a light beam, and collecting the surface reflectivity and refractive index of each point;

In step S300, the previous deposition thickness of each point is calculated according to the surface reflectivity and refractive index of each point, and then the standard deviation of the previous deposition thickness of each point is calculated, and the standard deviation is equal to the maximum value of the previous deposition thickness of each point and The difference between the minimum values is divided by the number of detection points. The smaller the standard deviation, the more uniform the deposition.

Optionally, in step S400, if the calculated standard deviation is greater than the set threshold, it means that the deposition uniformity of the previous step does not meet the requirements.

Optionally, in step S500, the methods for adjusting the local deposition rate of each point of the detected subsequent deposition include gas flow adjustment, level adjustment of the tray, height adjustment of the target material, and adjustment of the number of steps of the stepping motor of the conveying device. one or more;

The gas flow adjustment adopts the method of controlling the gas flow of different pipelines to change the local deposition rate;

The level adjustment of the tray changes the local deposition rate by adjusting the level of the tray;

The height adjustment of the target material changes the local deposition rate by changing the hanging height of the target material;

The number of steps of the stepper motor of the conveying device is adjusted, thereby controlling the position of the wafer on the tray to change the local deposition rate.

Optionally, in step S200, 49 points or 128 points of the previous deposition thickness detection are performed, and each point is evenly distributed as the wafer surface.

Optionally, in step S300, by setting a wafer detection point model, and according to the corresponding relationship of the detection points, import the thickness data of each point detected in real time into the wafer detection point model;

In step S500, a topography map of the wafer surface is drawn according to the thickness of each point, and then the local deposition rate of each point is determined according to the topography map of the wafer surface, and the subsequent deposition after detection is performed to compensate for the uniformity of the deposition thickness.

The present invention also provides a thin film deposition equipment, comprising a PVD deposition chamber, an optical test chamber and a controller; wherein,

The PVD deposition chamber is used to perform multiple step-by-step depositions on the wafer;

The optical test cavity is used for multi-point pre-deposition thickness detection between the step-by-step deposition;

The controller is respectively connected with the PVD deposition chamber and the optical test chamber, and the controller is used to control the step-by-step deposition and perform multi-point pre-step deposition thickness detection between the step-by-step depositions. According to the multi-point pre-step deposition Thickness analysis of the deposition uniformity of the previous step; to judge whether the deposition uniformity of the previous step meets the requirements, if not, adjust the local deposition rate of each point of the detection of the subsequent deposition according to the distribution of uneven points, and continue the subsequent step after the detection The uniformity compensation of the deposition thickness is performed during deposition.

Optionally, the PVD deposition chamber includes a rotating permanent magnet, a metal target, a tray and multiple gas outlets;

the tray is used for carrying wafers;

The metal target is arranged above the tray and is spaced from the tray by a first distance;

The rotating permanent magnet is disposed above the metal target and is spaced from the metal target by a second distance;

The plurality of gas outlets are respectively arranged on the lower part of the tray and the side of the space between the metal target and the tray, and each gas outlet is connected with a different pipeline.

Optionally, the tray is provided with an adjustment base, the adjustment base is connected to the controller, and the adjustment base can change the levelness of the tray under the control of the controller.

Optionally, different pipelines connected to the multiple gas outlets are provided with flow regulating valves, the flow regulating valves are connected to the controller, and the flow regulating valves can change the corresponding gas outlet pipelines under the control of the controller. gas flow.

Optionally, the controller includes a main control chip, the main control chip has a built-in wafer detection point model, and according to the corresponding relationship of the detection points, the thickness data of each point detected in real time is imported into the wafer detection point model; The thickness is drawn to form a topography map of the wafer surface, and then the local deposition rate of each point is determined according to the topography map of the wafer surface, and the subsequent deposition after the detection is performed to compensate for the uniformity of the deposition thickness.

Optionally, the metal target is provided with a height adjuster, the height adjuster is connected to the controller, and the height adjuster can change the first distance between the metal target and the tray under the control of the controller.

The film deposition method and device of the present invention divide the deposition process of the same deposition layer film into a plurality of step-by-step depositions, and between the step-by-step depositions, perform multi-point pre-deposition thickness detection, and if there is uneven thickness according to the detection According to the uneven point distribution, the local deposition rate of each point of the subsequent deposition of the detection is adjusted accordingly, and the subsequent deposition that continues after the detection is performed to compensate for the uniformity of the deposition thickness, so that the thickness of the deposited layer after deposition is uniform. , there is no need to increase the surface repair or compensation process of the wafer in the subsequent process, which simplifies the subsequent production process, improves the production efficiency, and reduces the production cost.

Other features and advantages of the present invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description, claims, and drawings.

The technical solutions of the present invention will be further described in detail below through the accompanying drawings and embodiments.

Description of drawings

The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the specification, and are used to explain the present invention together with the embodiments of the present invention, and do not constitute a limitation to the present invention. In the attached image:

1 is a perspective view of an existing thin film deposition equipment;

2 is a flow chart of a thin film deposition method according to an embodiment of the present invention;

3 is a schematic diagram of a thin film deposition apparatus in an embodiment of the present invention;

4 is a schematic diagram of a PVD deposition chamber used in an embodiment of the thin film deposition apparatus of the present invention;

FIG. 5 is a schematic diagram of the arrangement of the points of the present invention using 9 points to detect the thickness of the previous step;

FIG. 6 is a schematic diagram showing the arrangement of the points of the present invention for detecting the thickness of the previous deposition by using multiple points, and the surface morphology and uniformity of the wafer obtained according to the detection data of each point.

Detailed ways

The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.

As shown in FIG. 2, an embodiment of the present invention provides a thin film deposition method, comprising the following steps:

S100 performs multiple step-by-step depositions on wafers;

S200 performs multi-point pre-deposition thickness detection between the step-by-step deposition, and obtains the multi-point pre-deposition thickness;

S300 analyzes the pre-deposition uniformity according to the multi-point pre-deposition thickness;

S400 judges whether the deposition uniformity of the previous step meets the requirements, and if not, executes step S500;

S500 adjusts the local deposition rate of each point of the detected subsequent deposition according to the uneven point distribution, and performs uniformity compensation of the deposition thickness in the subsequent subsequent deposition after the detection.

The working principle of the above technical solution is as follows: in this solution, the wafer is deposited in multiple steps, and 2-5 step-by-step depositions can be used, for example, 3 or 4 step-by-step depositions; A multi-point inspection of the deposition thickness of the previous step deposition can be performed between the first step deposition and the second step deposition and/or between the second step deposition and the third step deposition, according to the inspection. The uniformity is judged to determine whether the local deposition rate needs to be adjusted; if the local deposition rate is adjusted, the adjustment principle is to increase the local deposition rate in the local area with thin deposition thickness and reduce the local deposition rate in the local area with thick deposition thickness; The step deposition uses an adjusted deposition rate to compensate for the deposition thickness uniformity to control the film thickness uniformity after film formation. Pre-step deposition refers to all step depositions before the current detection, and post-step deposition refers to all step depositions after the current detection; for example, 3 step depositions, for the time between the first step deposition and the second step deposition detection, the previous deposition refers to the first deposition, the latter deposition refers to the second deposition and the third deposition; for the detection between the second deposition and the third deposition, then The previous step deposition refers to the first step deposition and the second step deposition, and the latter step deposition refers to the third step deposition. The total deposition time of all the sub-layers is the total deposition time required for the deposition layer, and the sub-deposition time of each sub-deposition can be the same or different; It can be that each sub-step deposition is 20 seconds long, or the first sub-step deposition is 10 seconds, the second sub-step deposition is 20 seconds, and the third sub-step deposition sub-time is 30 seconds.

The beneficial effects of the above technical solutions are: in this solution, the deposition process of the same deposition layer film is divided into multiple step-by-step depositions, and between the step-by-step depositions, multi-point pre-deposition thickness detection is performed. In the case of uniformity, according to the uneven point distribution, the local deposition rate of each point of the subsequent deposition of the detection is adjusted accordingly, and the subsequent deposition after the detection is performed to compensate for the uniformity of the deposition thickness, so that the thickness of the deposited layer after deposition is It is uniform and does not need to increase the surface repair or compensation process of the wafer in the subsequent process, which simplifies the subsequent production process, improves the production efficiency, and reduces the production cost.

In one embodiment, in step S200, the deposition thickness detection adopts an optical measurement method, irradiates each point with a light beam, and collects the surface reflectivity and refractive index of each point;

In step S300, the previous deposition thickness of each point is calculated according to the surface reflectivity and refractive index of each point, and then the standard deviation of the previous deposition thickness of each point is calculated, and the standard deviation is equal to the maximum value of the previous deposition thickness of each point and The difference between the minimum values is divided by the number of detection points. The smaller the standard deviation, the more uniform the deposition.

The working principle and beneficial effects of the above technical solution are as follows: this solution adopts an optical measurement method to detect the deposition thickness, irradiates each point with a light beam, and collects the surface reflectivity and refractive index of each point, and the reflectivity and refractive index of the same point reflect the deposition. The thickness of the deposit can be set by the formula of the quantitative relationship between the reflectivity and the refractive index and the thickness of the deposition, which can be used to calculate the deposition thickness of each point; this scheme also introduces the standard deviation to evaluate the thickness uniformity of the deposition, and the standard deviation is equal to the thickness of each point. The difference between the maximum value and the minimum value of the deposition thickness in the previous step is divided by the number of detection points. The smaller the standard deviation is, the more uniform the deposition is, and the larger the standard deviation is, the more uneven the deposition is. Numerical quantitative evaluation is more conducive to the determination of thickness uniformity. , improve the objectivity and accuracy of judgment.

In one embodiment, in step S400, if the calculated standard deviation is greater than the set threshold, it means that the deposition uniformity of the previous step does not meet the requirements.

The working principle and beneficial effects of the above technical solutions are as follows: in this solution, on the basis of numerically quantifying the thickness uniformity by introducing the standard deviation, the comparison between the set threshold and the standard deviation is used to judge the thickness uniformity. If the standard deviation is greater than the set threshold, it means that the deposition uniformity of the previous step does not meet the requirements, which improves the objectivity and accuracy of judgment.

In one embodiment, in step S500, the method of adjusting the local deposition rate of each point of the detected subsequent deposition includes gas flow adjustment, level adjustment of the tray, height adjustment of the target material, and adjustment of the number of steps of the stepping motor of the conveying device one or more of;

The gas flow adjustment adopts the method of controlling the gas flow of different pipelines to change the local deposition rate;

The level adjustment of the tray changes the local deposition rate by adjusting the level of the tray;

The height adjustment of the target material changes the local deposition rate by changing the hanging height of the target material;

The number of steps of the stepper motor of the conveying device is adjusted, thereby controlling the position of the wafer on the tray to change the local deposition rate.

The working principle and beneficial effects of the above technical solutions are as follows: this solution provides a method for adjusting the local deposition rate of each point of the subsequent deposition, which can be adjusted by gas flow adjustment, level adjustment of the tray, height adjustment of the target material or step of the conveying device. For the adjustment of the number of motor steps, various of the aforementioned adjustment methods can also be used for combined adjustment, so as to achieve the purpose of changing the local deposition rate, realize process compensation, and improve the uniformity of deposition thickness.

In one embodiment, in step S200, 49 points or 128 points of previous deposition thickness detection are performed, and each point is evenly distributed as the wafer surface.

The working principle and beneficial effects of the above technical solutions are as follows: the number of detection points can be determined according to the needs and in combination with the accuracy requirements. In order to simplify the analysis, the detection points are generally uniformly distributed on the surface of the wafer, as shown in Figure 5. There are 9 detection points 5 on the surface of wafer 4; this scheme limits the number of detection points to 49 or 128 points. The denser the detection points are, the more detailed and accurate the topography of the wafer surface will be. It reflects the distribution of deposition thickness, but there are too many detection points, and the smaller the area of each local area, the increase in the amount of data for detection and processing, which affects the real-time and efficiency of detection. Therefore, it is appropriate to select the range of 49 points to 128 points, or 64 points Point or 96 points and so on.

As shown in FIG. 3, an embodiment of the present invention provides a thin film deposition apparatus, including a PVD deposition chamber 1, an optical test chamber 2 and a controller (not shown in the figure); wherein,

The PVD deposition chamber 1 is used for multiple stepwise deposition of wafers;

The optical test cavity 2 is used for multi-point pre-deposition thickness detection between step-by-step deposition;

The controller is respectively connected with the PVD deposition chamber and the optical test chamber, and the controller is used to control the step-by-step deposition and perform multi-point pre-step deposition thickness detection between the step-by-step depositions. According to the multi-point pre-step deposition Thickness analysis of the deposition uniformity of the previous step; to judge whether the deposition uniformity of the previous step meets the requirements, if not, adjust the local deposition rate of each point of the detection of the subsequent deposition according to the distribution of uneven points, and continue the subsequent step after the detection The uniformity compensation of the deposition thickness is performed during deposition.

The working principle and beneficial effects of the above technical solutions are as follows: in this solution, an optical test cavity is set in the film deposition equipment, and the deposition control is performed by a controller, and the deposition process of the same deposition layer film is divided into multiple layers in the PVD deposition cavity. Step-by-step deposition, between the step-by-step deposition, put the wafer into the optical test chamber for multi-point pre-deposition thickness detection, if there is uneven thickness according to the detection, adjust the detection accordingly according to the uneven point distribution The local deposition rate of each point of the subsequent deposition, after the detection, the subsequent deposition that continues to perform the uniformity compensation of the deposition thickness, so that the thickness of the deposited layer after deposition is uniform, and there is no need to increase the surface repair of the wafer in the subsequent process. Or the compensation process simplifies the subsequent production process, improves the production efficiency, and reduces the production cost.

In one embodiment, as shown in FIG. 4 , the PVD deposition chamber 1 includes a rotating permanent magnet 11, a metal target 12, a tray 13 and a plurality of gas outlets 14;

The tray 13 is used to carry the wafer 4;

The metal target 12 is disposed above the tray 13 and is spaced from the tray 13 by a first distance;

The rotating permanent magnet 11 is disposed above the metal target 12 and is spaced apart from the metal target 12 by a second distance;

The plurality of gas outlets 14 are respectively disposed at the lower part of the tray 13 and the side surface of the space between the metal target 12 and the tray 13 , and each gas outlet 14 is connected to a different pipeline.

The working principle and beneficial effects of the above technical solutions are as follows: this solution provides the structural form adopted by the PVD deposition cavity, wherein the first distance refers to the distance between the metal target and the tray in the height direction, and the second distance refers to the rotating permanent magnet and the tray. The spacing distance of metal targets in the height direction; during production, the wafer is sent to the tray through the conveyor, and the corresponding process gas is supplied to the PVD deposition chamber by connecting the supply gas outlet with the pipeline, and the rotating permanent magnet generates high-speed charged particle magnetism. Controlled sputtering, by bombarding the metal target with high-speed charged particles, realizes the coating on the surface of the wafer.

In one embodiment, the tray is provided with an adjustment base, the adjustment base is connected with the controller, and the adjustment base can change the levelness of the tray under the control of the controller.

The working principle and beneficial effects of the above technical solutions are as follows: in this solution, the tray is provided with an adjustment base to adjust the levelness of the tray, and the distance between each point of the wafer and the metal target is changed, thereby causing various points of the wafer to be separated. The difference in deposition rate results in different deposition rates at each point on the wafer surface, realizing compensation for deposition uniformity.

In one embodiment, different pipelines connected to the multiple gas outlets are provided with flow regulating valves, the flow regulating valves are connected to the controller, and the flow regulating valves can change the corresponding gas outlets under the control of the controller Gas flow in the pipeline.

The working principle and beneficial effects of the above technical solution are as follows: this solution connects different pipelines to the gas outlet, adjusts the flow control valves set in the different pipelines, and changes the gas flow rate of the corresponding gas outlet pipeline, thereby causing the deposition rate of each point of the wafer. Different deposition rates are formed at each point on the wafer surface to achieve compensation for deposition uniformity.

In one embodiment, the metal target is provided with a height adjuster, the height adjuster is connected to the controller, and the height adjuster can change the first distance between the metal target and the tray under the control of the controller , the second distance between the rotating permanent magnet and the metal target also changes.

The working principle and beneficial effects of the above technical solutions are as follows: in this solution, a height adjuster is provided for the metal target to adjust the first distance between the metal target and the tray, and the second distance between the rotating permanent magnet and the metal target also occurs. Changes, thereby affecting the bombardment of high-speed charged particles on the metal target, causing the difference in the deposition rate of each point of the wafer, forming different deposition rates at each point on the wafer surface, and realizing the compensation of deposition uniformity.

In one embodiment, the wafers are delivered to the tray by a conveying device, and the conveying device is driven by a stepping motor, and the stepping motor is connected with the controller.

The working principle and beneficial effects of the above technical solution are as follows: this solution adopts a conveying device to send the wafer to the tray, drives the conveying device with a stepping motor, changes the stepping amount of the stepping motor, and can control the position of the wafer on the tray, The local deposition thickness can be caused to be different, and the compensation for the deposition uniformity can be realized.

In one embodiment, the controller includes a main control chip, and the main control chip has a built-in wafer detection point model. According to the corresponding relationship of the detection points, the thickness data of each point detected in real time is imported into the wafer detection point model. The thickness of each point is drawn to form a topography map of the wafer surface, and then the local deposition rate of each point is determined according to the topography map of the wafer surface, and the subsequent deposition after detection is performed to compensate for the uniformity of the deposition thickness.

The working principle and beneficial effects of the above technical solutions are as follows: In this solution, the real-time detected thickness data of each point is imported into the wafer detection point model, as shown in FIG. The points are marked with the imported inspection thickness data. The denser the inspection points are, the more detailed the topography of the wafer surface will be, and the more accurate the deposition thickness distribution will be. However, if there are too many inspection points, the smaller the area of each local area, the more And the increase in the amount of data processed will affect the real-time performance and efficiency of detection, so it is appropriate to select an appropriate number of detection points for layout; this scheme forms a wafer surface topography map by drawing, for example, using different colors to represent different deposition thicknesses, so that it can be Intuitively understand the flatness of the wafer surface, and even introduce an image method similar to map elevation analysis to evaluate the uniformity of deposition thickness, which broadens the evaluation methods and methods.

In one embodiment, the controller uses the following formula to calculate the adjustment value of the local deposition rate at each point of the subsequent deposition:

In the above formula, V′ _i represents the adjustment value of the local deposition rate at the ith point; D represents the total deposition thickness of the deposited layer, the design value; _{before d i} represents the detected deposition thickness of the previous step at the ith point; _before t represents The time before d _{i of the} previous step deposition, if there are multiple step depositions in the previous step, _{then before} t is the total time of all step depositions in the previous step; _After t is the total time of all the step depositions of the subsequent step; _Vi represents the local deposition rate of the i-th point of the previous step. If there are multiple step depositions in the previous step, and If the local deposition rates are different, V _i takes the time-weighted average of the local deposition rates used for each step deposition;

According to the calculation results, adjust the local deposition rate of each point.

The working principle and beneficial effects of the above technical scheme are as follows: the controller of this scheme uses the above calculation formula to calculate the adjustment value of the local deposition rate of each point deposited in the subsequent step, and realizes the quantitative and accurate calculation and control of the adjustment of the local deposition rate of each point, Relatively independent control of the local deposition rate at each point is created, compensating for deposition uniformity.

At present, there is no optical testing equipment in all semiconductor sputtering equipment. The present invention has (optical) testing equipment in the optical thin film deposition machine. The present invention integrates the optical testing function with the existing semiconductor process.

After a wafer is deposited, during the transfer process, the optical testing equipment is used to integrate with the existing machine (step deposition: for example, the deposition time required for one deposition in the original deposition menu is 60 seconds, and the step deposition can make the deposition menu 60 seconds) The second is divided into several times, such as 3 times of deposition, then the deposition time is 20 seconds each time. The necessity of the step-by-step deposition in the present invention is reflected: because one deposition cannot compensate and correct the surface uniformity of the final film formation , and the step-by-step process enables each deposition to be compensated and corrected for the surface uniformity according to the feedback results of the optical test), and the thickness of the wafer surface is monitored, that is, using optical test equipment, for some thin films (each step post-deposition film) for post-deposition real-time optical measurements, including the acquisition of surface reflectance and refractive index. Moreover, the user can define the distribution of test points (detection points) on the wafer surface. The more detailed (intensive) point distribution method is, the more detailed the measurement effect will be. Through the feedback mechanism to the deposition chamber, the feedback mechanism is described in detail as follows: test the surface morphology of the film, generally a multi-point test (detection), such as a 49-point or 128-point test, the test points (detection points) are evenly distributed throughout the crystal. After the test, the film surface topography and uniformity are formed. After the test, the film surface topography is transmitted to the wafer surface flatness repair machine. The wafer surface flatness repair machine determines the different areas of the film according to the topography. The shape is repaired for flatness.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims (10)

1. A thin film deposition method, comprising the steps of:

s100, carrying out multiple step deposition on the round crystal;

s200, carrying out multipoint previous-step deposition thickness detection between the step-by-step depositions to obtain multipoint previous-step deposition thickness;

s300, analyzing the deposition uniformity of the previous step according to the deposition thickness of the previous step at multiple points;

s400, judging whether the deposition uniformity in the previous step meets the requirement, and if not, executing the step S500;

s500, according to the uneven point distribution condition, adjusting the local deposition rate of each point of the detected post-step deposition, and performing the uniformity compensation of the deposition thickness in the post-step deposition which is continuously performed after the detection.

2. The thin film deposition method according to claim 1, wherein in the step S200, the deposition thickness is detected by optically measuring, irradiating each point with a light beam, and collecting the surface reflectivity and refractive index of each point;

in the step S300, the previous deposition thickness of each point is calculated according to the surface reflectivity and the refractive index of each point, the standard deviation of the previous deposition thickness of each point is calculated, the standard deviation is equal to the difference between the maximum value and the minimum value of the previous deposition thickness of each point divided by the number of detection points, and the smaller the standard deviation is, the more uniform the deposition is.

3. The thin film deposition method of claim 2, wherein in step S400, if the calculated standard deviation is greater than a predetermined threshold, it indicates that the deposition uniformity of the previous step is not satisfactory.

4. The thin film deposition method according to claim 1, wherein the step S500 is performed by adjusting the local deposition rate of each point of the subsequent deposition to be detected by one or more of gas flow rate adjustment, horizontal adjustment of a tray, height adjustment of a target, and step number adjustment of a stepping motor of a conveyor;

the gas flow regulation adopts a gas flow mode of controlling different pipelines to change the local deposition rate;

the horizontal adjustment of the tray changes the local deposition rate by adjusting the levelness of the tray;

the height adjustment of the target changes the local deposition rate by changing the suspension height of the target;

the stepper motor of the transport apparatus is adjusted in steps to control the position of the wafer on the tray to vary the local deposition rate.

5. The thin film deposition method as claimed in claim 1, wherein in step S300, by setting a round-grained detection point model, thickness data of each point detected in real time is imported into the round-grained detection point model according to a correspondence relationship of the detection points;

in the step S500, a wafer surface topography map is formed according to the thickness drawing of each point, then the local deposition rate of each point is determined according to the wafer surface topography map, and the subsequent deposition which is continuously carried out after the detection is carried out carries out the uniformity compensation of the deposition thickness.

6. The thin film deposition equipment is characterized by comprising a PVD deposition chamber, an optical test chamber and a controller; wherein,

the PVD deposition cavity is used for performing multiple step deposition on a wafer;

the optical test cavity is used for carrying out multi-point previous deposition thickness detection between the step depositions;

the controller is respectively connected with the PVD deposition cavity and the optical test cavity, and is used for controlling step deposition and carrying out multipoint previous-step deposition thickness detection among the step deposition and analyzing the previous-step deposition uniformity according to the multipoint previous-step deposition thickness; and judging whether the deposition uniformity of the previous step meets the requirement, if not, adjusting the local deposition rate of each point of the detected subsequent deposition according to the distribution condition of the uneven points, and performing the uniformity compensation of the deposition thickness in the subsequent deposition which is continuously performed after the detection.

7. The thin film deposition apparatus of claim 6, wherein the PVD deposition chamber comprises a rotating permanent magnet, a metal target, a tray, and a plurality of gas outlets;

the tray is used for bearing the round crystal;

the metal target is arranged above the tray and is separated from the tray by a first distance;

the rotating permanent magnet is arranged above the metal target and is spaced from the metal target by a second distance;

the plurality of gas outlets are respectively arranged at the lower part of the tray and the side surface of the space between the metal target and the tray, and each gas outlet is connected with different pipelines.

8. The thin film deposition apparatus according to claim 7, wherein the tray is provided with an adjustment base connected to a controller, the adjustment base being capable of changing a levelness of the tray under the control of the controller.

9. The thin film deposition apparatus according to claim 7, wherein different lines of the plurality of gas outlet connections are provided with flow regulating valves, the flow regulating valves being connected to the controller, the flow regulating valves being capable of changing the gas flow rates of the corresponding gas outlet lines under the control of the controller.

10. The thin film deposition apparatus according to claim 7, wherein the controller includes a main control chip, the main control chip has a wafer detection point model built therein, and thickness data of each point detected in real time is imported into the wafer detection point model according to a correspondence relationship between the detection points; drawing according to the thickness of each point to form a surface topography of the round crystal, then determining the local deposition rate of each point according to the surface topography of the round crystal, and continuing to perform the subsequent deposition after detection to perform the uniformity compensation of the deposition thickness.

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