CN119213540A - Apparatus and method for cleaning a substrate - Google Patents
Apparatus and method for cleaning a substrate Download PDFInfo
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- CN119213540A CN119213540A CN202280096088.4A CN202280096088A CN119213540A CN 119213540 A CN119213540 A CN 119213540A CN 202280096088 A CN202280096088 A CN 202280096088A CN 119213540 A CN119213540 A CN 119213540A
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- Prior art keywords
- substrate
- arm
- center
- comb
- central
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- 239000000758 substrate Substances 0.000 title claims abstract description 181
- 238000004140 cleaning Methods 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims description 84
- 210000001520 comb Anatomy 0.000 claims abstract description 22
- 239000000356 contaminant Substances 0.000 description 9
- 238000004506 ultrasonic cleaning Methods 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/06—Cleaning involving contact with liquid using perforated drums in which the article or material is placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
According to one aspect of the embodiments, there is provided an apparatus for cleaning a substrate, the apparatus including a cleaning tank containing a plurality of substrates and a cleaning solution, a megasonic generator disposed below the cleaning tank and emitting ultrasonic waves toward the substrate during a cleaning time (t), first and second side arms disposed on both sides of an interior of the cleaning tank, a plurality of first and second side combs disposed below the first and second side arms and supporting both sides of a lower portion of the substrate, a center arm disposed at a center of the interior of the cleaning tank, a plurality of center combs disposed below the center arm and supporting a center of the lower portion of the substrate, and a driving unit for swinging the center arm upward/downward with respect to the substrate during the cleaning time (t).
Description
Technical Field
Embodiments relate to an apparatus and method for cleaning a substrate, which can improve substrate cleaning performance by uniformly transmitting ultrasonic waves over the entire substrate without dead zones.
Background
In general, a substrate for manufacturing a semiconductor device is produced through a series of processes including a dicing process, a grinding process, a lapping process, an etching process, and a polishing process.
During the substrate manufacturing process, the surface of the substrate may be contaminated with fine particles, metal contaminants, organic contaminants, etc. These contaminants reduce the quality of the substrate and also lead to physical defects and degradation of the characteristics of the semiconductor device, ultimately reducing the production yield of the semiconductor device. Accordingly, a wet cleaning process using deionized water or an etching solution (such as an acid or alkali solution) is performed to remove contaminants attached to the surface of the substrate.
The wet cleaning process is divided into a single wafer cleaning process for cleaning the substrates one by one and a batch cleaning process for cleaning all the substrates at a time.
The batch type substrate cleaning apparatus may clean the surfaces of the substrates by immersing a plurality of substrates in a cleaning tank filled with a cleaning solution for a certain time and generating ultrasonic waves in the cleaning solution.
Contaminants, such as particulates, organics, and metal contaminants, present on the surface of the substrate may be removed by chemical reaction using a suitable cleaning solution, such as standard cleaning-1 (SC 1), standard cleaning-2 (SC 2), or phosphoric acid.
In addition, contaminants on the surface of the substrate can be removed more effectively by ultrasonic vibration propagated through the cleaning solution, and wet etching can be performed to remove an oxide film or a nitride film formed on the surface of the substrate.
According to the wafer cleaning apparatus disclosed in korean patent publication No. 2012-0127783 (16 th of 2011), the wafer cleaning apparatus includes a gas spraying part that sprays cleaning gas onto a wafer, a gas recovery part facing the gas spraying part with the wafer between the gas spraying part and the gas recovery part, and a rotation driver that rotates the wafer.
The rotary drive is in direct contact with the edge of the wafer and the rotary drive includes a recess into which the edge of the wafer is inserted.
Disclosure of Invention
Technical problem
Embodiments are directed to an apparatus and method for cleaning a substrate, which are capable of rotating a substrate supported on a comb by a set angle during ultrasonic cleaning so that ultrasonic waves can be uniformly emitted over the entire substrate without dead zones even when a simple structure is provided inside a cleaning tank.
Technical proposal
According to one aspect of the embodiments, there is provided an apparatus for cleaning a substrate, the apparatus including a cleaning tank containing a plurality of substrates and a cleaning solution, a megasonic generator (megasonic) disposed below the cleaning tank and emitting ultrasonic waves toward the substrate during a cleaning time (t), first and second side arms disposed on both sides of an inside of the cleaning tank, a plurality of first and second side combs disposed below the first and second side arms and supporting both sides of a lower portion of the substrate, a center arm disposed at a center of the inside of the cleaning tank, a plurality of center combs disposed below the center arm and supporting a center of the lower portion of the substrate, and a driving unit configured to swing the center arm upward or downward with respect to the substrate during the cleaning time (t).
According to one aspect of the embodiment, the first and second side arms may include a pair of vertical portions vertically arranged at positions corresponding to edges of both sides of the substrate, and a pair of inclined portions arranged at lower ends of the vertical portions at an inward and downward angle, wherein the first and second side combs may be arranged on the inclined portions with regular gaps.
According to one aspect of the embodiment, the center arm may be arranged to vertically cross the center of the substrate, and the center arm may be moved upward/downward or swung with respect to a driving point coinciding with the center of the substrate.
According to one aspect of the embodiment, the central comb may be provided with at least three or more central combs, and each of the first side comb and the second side comb may be provided with at least two side combs.
According to an aspect of the embodiment, the drive unit may be configured to swing the central arm within 45 ° with respect to the center of the substrate.
According to an aspect of the embodiment, the drive unit may be configured to move the central arm up/down relative to the center of the substrate by at least the diameter of the central comb or the diameters of the first side comb and the second side comb.
According to an aspect of the embodiment, the driving unit may be configured to repeat a process of moving the center arm upward and rotating in the forward direction and moving the center arm downward and rotating in the reverse direction to rotate the substrate by a set angle.
According to one aspect of the embodiment, when the drive unit moves the central arm upward by a predetermined gap, the central comb will be in contact with the substrate and the first side comb and the second side comb will not be in contact with the substrate.
According to one aspect of the embodiment, the center comb is not in contact with the substrate and the first side comb and the second side comb are in contact with the substrate when the drive unit moves the center arm downward by a predetermined gap.
According to another aspect of the embodiments, there is provided a method for cleaning a substrate, the method including a first operation in which a plurality of substrates are loaded into a cleaning bath containing a cleaning solution and both sides of a lower portion of the substrates are supported by a plurality of first side combs and second side combs disposed under first side arms and second side arms, a second operation in which ultrasonic waves are emitted toward the substrates loaded into the cleaning bath for a cleaning time (t) after the first operation, a third operation in which a center arm disposed between the first side arms and the second side arms is caused to rotate the substrates by a set angle by the plurality of center combs disposed under the center arm when the center arm moves upward/downward with respect to the center of the substrates or swings during the second operation, and a fourth operation in which the substrates are unloaded from the cleaning bath after the second operation.
According to another aspect of the embodiment, in the first operation, the center arm may be arranged to vertically cross the center of the substrate, the center comb may be maintained in a state of not being in contact with the lower portion of the substrate, and the first side comb and the second side comb may be maintained in a state of being in contact with both sides of the lower portion of the substrate.
According to another aspect of the embodiment, the third operation may include a process of moving or swinging the center arm upward/downward with respect to a driving point coinciding with the center of the substrate.
According to another aspect of the embodiment, the third operation may include a process in which an edge of the substrate is supported by at least three center combs or at least two first side combs and a second side comb.
According to another aspect of the embodiment, the third operation may include a process of swinging the center arm within 45 ° with respect to the center of the substrate.
According to another aspect of the embodiment, the third operation may include a process of moving the center arm up/down with respect to the center of the substrate by at least the diameter of the center comb or the diameters of the first side comb and the second side comb.
According to another aspect of the embodiment, the third operation may include a first process of rotating the center arm in the reverse direction by half of the set angle, a second process of moving the center arm upward after the first process, a third process of rotating the center arm in the forward direction by the set angle after the second process, a fourth process of moving the center arm downward after the third process, and a fifth process of rotating the center arm in the reverse direction by the set angle after the fourth process.
According to another aspect of the embodiment, the third operation may include repeating the second process, the third process, the fourth process, the fifth process until the cleaning time (t) is completed.
According to another aspect of the embodiment, in the first, fourth and fifth processes, the center comb is not in contact with the substrate in a state in which the center arm is lowered, and the first and second side combs are in contact with the substrate.
According to another aspect of the embodiment, the center comb may be in contact with the substrate in a state in which the center arm is raised, and the first side comb and the second side comb may not be in contact with the substrate when the second process and the third process are performed.
According to another aspect of the embodiment, the fourth operation may include a process of rotating the center arm in the reverse direction by half of the set angle after the fourth process, and when the process is performed, the center comb may not contact the substrate in a state in which the center arm is lowered, and the first side comb and the second side comb may contact the substrate.
Advantageous effects
According to an embodiment, the substrate is supported by a first side comb and a second side comb provided on the first side arm and the second side arm, and a drive shaft of the center arm coinciding with the center of the substrate moves or swings upward/downward such that the center comb provided on the center arm rotates the substrate by a set angle.
Therefore, even when a simple structure is provided inside the cleaning bath, the substrate supported on the comb can be rotated by a set angle during ultrasonic cleaning. Accordingly, ultrasonic waves can be emitted uniformly over the entire substrate without dead zones, so that the substrate can be cleaned uniformly. Further, since upward/downward movement and swing can be performed at a single driving point, equipment and control can be simplified, and cleaning performance can be improved by minimizing a pollution source inside the cleaning tank.
Drawings
Fig. 1 is a diagram schematically illustrating an apparatus for cleaning a substrate according to an embodiment.
Fig. 2A to 2F are diagrams showing an operation state of an apparatus for cleaning a substrate according to an embodiment.
Fig. 3 is a flowchart illustrating a method for cleaning a substrate according to an embodiment.
Fig. 4 is a flowchart showing operation S3 of fig. 3 in more detail.
Detailed Description
Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings.
Fig. 1 is a diagram schematically illustrating an apparatus for cleaning a substrate according to an embodiment.
In an embodiment, an apparatus for cleaning a substrate includes a cleaning tank (B), a megasonic generator (M) disposed below the cleaning tank (B), first and second side arms (110, 120) disposed inside the cleaning tank (B), a plurality of first and second side combs (130, 140) disposed below the first and second side arms (110, 120), a center arm (150) disposed between the first and second side arms (110, 120), a center comb (160) disposed below the center arm (150), and a driving unit (not shown) that moves or swings the center arm (150) upward/downward with respect to a center of the substrate (W).
The cleaning tank (B) may have a tank shape with an open top surface, and the cleaning tank may contain a cleaning solution for cleaning the substrate. The cleaning solution contained in the cleaning tank (B) may overflow to the upper side of the cleaning tank (B), and contaminants including particles contained in the cleaning solution overflowing from the cleaning tank (B) may be removed from the cleaning solution, and then the cleaning solution may be supplied back to the cleaning tank (B).
The substrate (W) may include all of a Si substrate, a SiC substrate, a GaN substrate, or a sapphire substrate having a disk shape, but the present disclosure is not limited thereto. The cleaning solution may vary depending on the type of substrate. The cleaning solution may be an etching solution such as an acid or alkali solution, deionized water (DeIonized Water, DIW) from which various impurities are removed, or SC1 (diw+h 2O2+NH4 OH), but the present disclosure is not limited thereto. The cleaning tank (B) may be made of a material such as quartz or sapphire, which has corrosion resistance to the cleaning solution, and also transmits ultrasonic waves generated from a megasonic generator (M) described below.
The megasonic generator (M) may be disposed at an outside below the cleaning tank (B), and the megasonic generator may generate ultrasonic waves toward a substrate (W) disposed inside the cleaning tank. The ultrasonic waves generated from the megasonic generator (M) may generate vibrations of the cleaning solution passing through the inside of the cleaning tank (B), and the vibrations of the cleaning solution may remove a contamination source such as particles attached to the surface of the substrate (W).
Of course, the vibrations of the ultrasonic waves generated from the megasonic generator (M) do not propagate to some surfaces of the substrate (W) through the first side comb (130), the second side comb (140), and the center comb (160). However, since the center arm (150) to be described below is moved upward/downward or swung with respect to the center of the substrate by a driving unit (not shown), thereby rotating the substrate (W) by a predetermined angle, the entire surface of the substrate (W) can be uniformly cleaned, which will be described in detail below.
The substrates (W) are arranged in an upright state with a predetermined gap in the front-rear direction. Both sides of the lower portion of the substrate (W) may be supported by the first and second side arms (110, 120) and the first and second side combs (130, 140).
The first and second side arms (110, 120) may be disposed on both sides of the inside of the cleaning tank (B), and the first and second side arms may be disposed at the front and rear of the substrate (W), respectively. The first and second side arms (110 and 120) may include vertical portions (111 and 121) and inclined portions (112 and 122), respectively, which are vertically disposed at positions corresponding to edges of both sides of the substrate (W), and inclined portions (121) which are disposed at lower ends of the vertical portions (111 and 121) to be inclined downward in an inward direction. When the lower portions of the first side arm (110) and the second side arm (120) are configured to be inclined, the area may be minimized, thereby reducing a contamination source.
The first side comb (130) and the second side comb (140) may be disposed on inclined portions (112) and (122) of the first side arm and the second side arm, respectively, with a predetermined gap in a circumferential direction of the substrate (W), and the first side comb and the second side comb may be disposed to cross a front-rear direction of the substrate (W). The first side comb (130) and the second side comb (140) may be provided with a plurality of slits spaced apart in the front-rear direction with a predetermined gap so that both sides of the lower portion of the substrate (W) may be located on the top surface of the substrate. In order to stably support the substrate (W), it is preferable to provide at least two first side combs (130) and second side combs (140) on each of the first side arm (110) and the second side arm (120). In view of the range of movement of the center comb (160) to be described below, it is preferable that the first side comb (130) and the second side comb (140) are disposed to maintain a gap of at least 100 ° or more with respect to the center of the substrate (W).
During ultrasonic cleaning, the substrate (W) is rotated by a set angle. The substrate (W) may be rotated by a center arm (150) and a center comb (160).
The center arm (150) may be disposed at the center inside the cleaning bath (B), i.e., between the first side arm (110) and the second side arm (120), and the center arm may be disposed at the front and rear of the substrate (W). The center arm (150) may be vertically disposed across a center of the substrate (W), and the center arm may have a drive shaft (151) coincident with the center of the substrate (W). The driving shaft (151) of the center arm is a driving point connected to a driving unit (not shown), and the driving shaft of the center arm can move or swing the center arm (150) upward/downward with respect to the driving shaft (151) of the center arm.
The center comb (160) may be disposed below the center arm (150) with a predetermined gap in a circumferential direction of the substrate (W), and the center comb may be disposed to cross a front-rear direction of the substrate (W). Similar to the first side comb (130) and the second side comb (140), the center comb (160) may also be disposed such that a plurality of slits in which the center of the lower portion of the substrate (W) is located are disposed on the top surface of the substrate with a predetermined gap in the front-rear direction. In order to stably support the substrate (W), it is preferable to provide at least three center combs (160) on the center arm (150).
The driving unit (not shown) may be configured to move or swing the center arm (150) upward/downward with respect to the driving shaft (151) of the center arm. Since the driving unit (not shown) may be variously constructed, a detailed description thereof will be omitted.
However, the drive unit (not shown) may rotate the center comb (160) in the forward and reverse directions within 45 ° with respect to the center of the substrate (W) by swinging the center arm (150) within 45 ° with respect to the drive shaft (151) of the center arm.
Furthermore, a driving unit (not shown) moves the center arm (150) upward/downward with respect to a driving shaft (151) of the center arm by at least the diameters of the first side comb (130) and the second side comb (140) or the diameter of the center comb (160) (i.e., 10mm or more) so that the substrate (W) may be selectively brought into contact with or out of contact with the first side comb (130), the second side comb (140) and the center comb (160).
Fig. 2A to 2F are diagrams showing an operation state of an apparatus for cleaning a substrate according to an embodiment.
As shown in fig. 2A, when the substrate (W) is loaded into the washing tank (B) containing the washing solution, both sides of the lower portion of the substrate (W) are supported by the first side comb (130) and the second side comb (140), but the center of the lower portion of the substrate (W) is maintained in a state spaced apart from the center comb (160).
When the megasonic generator (M) operates and emits ultrasonic waves toward the substrate (W), foreign substances adhering to the surface of the substrate (W) are removed by ultrasonic vibration, and the process of rotating the substrate (W) by a set angle (a) is repeated during ultrasonic cleaning.
As shown in fig. 2B, when the driving shaft (151) of the center arm is rotated 15 ° in the reverse direction and then moved up by 10mm or more as shown in fig. 2C, the substrate (W) is not supported by the first side comb (130) and the second side comb (140), but is supported by the center comb (160).
Next, as shown in fig. 2D, when the driving shaft (151) of the center arm is rotated by 30 ° in the forward direction and then moved downward by 10mm or more as shown in fig. 2E, the substrate (W) is supported by the first side comb (130) and the second side comb (140) instead of the center comb (160).
Next, as shown in fig. 2F, when the driving shaft (151) of the center arm is rotated by 30 ° in the reverse direction and then moved upward by 10mm or more as shown in fig. 2C, the substrate (W) is not supported by the first side comb (130) and the second side comb (140), but by the center comb (160).
By repeating the process shown in fig. 2C to 2F during the ultrasonic cleaning, the substrate (W) supported by the first side comb (130) and the second side comb (140) can be rotated 30 ° at a time. Therefore, a dead zone that does not emit ultrasonic waves can be eliminated, and the surface of the substrate (W) can be cleaned uniformly.
When the ultrasonic cleaning is completed, the process proceeds to fig. 2, and then, as shown in fig. 2G, the driving shaft (151) of the center arm is rotated by 15 ° in the reverse direction to return to the initial position, and the substrate (W) is unloaded from the cleaning bath (B).
Fig. 3 is a flowchart illustrating a method for cleaning a substrate according to an embodiment, and fig. 4 is a flowchart illustrating operation S3 of fig. 3 in more detail.
First, a substrate is loaded into a cleaning tank containing a cleaning solution. (see S1)
Both sides of the lower portion of the substrate are supported by the first side comb and the second side comb, but the center of the lower portion of the substrate is maintained in a state of being spaced apart from the center comb. Since the cleaning solution is contained in the cleaning tank, the cleaning solution may etch the surface of the substrate.
Next, the megasonic generator emits ultrasonic waves into the cleaning tank. (see S2)
The ultrasonic wave passes through the cleaning tank, vibrates the cleaning solution, and causes foreign substances attached to the surface of the substrate to be removed. Of course, the ultrasonic waves do not propagate to the portions supported by the first side comb and the second side comb, thereby forming dead zones.
Next, during the cleaning time (t), the substrate is rotated by a set angle (a). (see S3 and S4)
Specifically, the drive shaft of the center arm, which coincides with the center of the substrate, is rotated in the reverse direction by half of the set angle (a). (see S31) the substrate (W) is supported by the first side comb and the second side comb, but not by the center comb. The central comb may be positioned at one side of the lower portion of the substrate before rotating the substrate.
Next, the drive shaft of the center arm is moved upward by a set height (h) or more. (see S32) the substrate (W) is not supported by the first side comb and the second side comb, but by the center comb. To rotate the substrate, a center comb may be supported on one side of the lower portion of the substrate.
Next, the drive shaft of the center arm is rotated in the forward direction by a set angle (a). (see S33) the center comb may move one side of the lower portion of the substrate to the other side and rotate the substrate by a set angle (a).
Next, the driving shaft of the center arm is moved downward by a set height (h) or more, and then rotated in the reverse direction by a set angle (a). (see S34 and S35) the substrate (W) is supported by the first side comb and the second side comb, instead of the center comb. The central comb may be positioned at one side of the lower portion of the substrate before rotating the substrate.
By repeating the processes S32 to S35 while the ultrasonic cleaning is performed, the substrate (W) supported by the first side comb and the second side comb can be rotated by a set angle (a) each time, thereby eliminating a dead zone where ultrasonic waves are not emitted, and uniformly cleaning the surface of the substrate (W).
Next, after the cleaning time (t) elapses, the substrate is unloaded from the cleaning tank. (see S5)
The above description is merely an example of the technical idea of the present disclosure, and it will be understood by those of ordinary skill in the art that various modifications and variations may be made without departing from the essential features of the present disclosure.
Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical ideas of the present disclosure, but are intended to explain the present disclosure, and the scope of the technical ideas of the present disclosure is not limited by these embodiments.
The scope of the present disclosure should be construed by the appended claims, and all technical ideas within the scope equivalent thereto should be construed to be included in the scope of the claims of the present disclosure.
INDUSTRIAL APPLICABILITY
The present embodiment is suitable for cleaning contaminants adhering to a surface during the process of manufacturing a semiconductor substrate.
Claims (20)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220059210A KR20230159179A (en) | 2022-05-13 | 2022-05-13 | Wafer cleaning apparatus and cleaning method thereof |
| KR10-2022-0059210 | 2022-05-13 | ||
| PCT/KR2022/019696 WO2023219219A1 (en) | 2022-05-13 | 2022-12-06 | Apparatus and method for cleaning substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119213540A true CN119213540A (en) | 2024-12-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280096088.4A Pending CN119213540A (en) | 2022-05-13 | 2022-12-06 | Apparatus and method for cleaning a substrate |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20230159179A (en) |
| CN (1) | CN119213540A (en) |
| WO (1) | WO2023219219A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117976583B (en) * | 2024-03-29 | 2024-05-28 | 江苏英思特半导体科技有限公司 | Automatic grabbing and cleaning equipment for silicon wafer flower basket |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100034091A (en) * | 2008-09-23 | 2010-04-01 | 주식회사 실트론 | Wafer cleaning apparatus and method using megasonic |
| JP5309066B2 (en) * | 2010-03-25 | 2013-10-09 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and recording medium on which a computer program for executing the substrate processing method is recorded |
| JP5696491B2 (en) * | 2011-01-20 | 2015-04-08 | 株式会社Sumco | Wafer cleaning apparatus and cleaning method |
| JP5312662B1 (en) * | 2012-11-02 | 2013-10-09 | 倉敷紡績株式会社 | Wafer rotating apparatus and wafer rotating method |
| JP6399372B1 (en) * | 2017-10-30 | 2018-10-03 | 株式会社Ｅｃｐ | Wafer cleaning apparatus and wafer cleaning method |
-
2022
- 2022-05-13 KR KR1020220059210A patent/KR20230159179A/en not_active IP Right Cessation
- 2022-12-06 WO PCT/KR2022/019696 patent/WO2023219219A1/en unknown
- 2022-12-06 CN CN202280096088.4A patent/CN119213540A/en active Pending
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| Publication number | Publication date |
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| KR20230159179A (en) | 2023-11-21 |
| WO2023219219A1 (en) | 2023-11-16 |
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