JP5309066B2 - Substrate processing apparatus, substrate processing method, and recording medium on which a computer program for executing the substrate processing method is recorded - Google Patents

Description

  The present invention relates to a substrate processing apparatus for cleaning a substrate immersed in a cleaning liquid, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded. The present invention relates to a substrate processing apparatus, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded.

  2. Description of the Related Art Conventionally, there has been known a substrate processing apparatus that performs a cleaning process by immersing a substrate such as a semiconductor wafer or a glass substrate for LCD (herein simply referred to as a wafer) in a cleaning liquid such as pure water or chemical stored in a cleaning tank. ing. When cleaning a wafer in such a substrate processing apparatus, a cleaning liquid is supplied into the cleaning tank, and the cleaning liquid overflows from the cleaning tank. In this way, particles or the like adhering to the wafer are removed, and the wafer is cleaned.

  As one type of such a substrate processing apparatus, an ultrasonic cleaning processing apparatus that performs ultrasonic cleaning (including megasonic processing) using ultrasonic waves is known (for example, see Patent Document 1). In this ultrasonic cleaning apparatus, a vibrator capable of ultrasonic vibration is attached to the bottom of the cleaning tank, and an ultrasonic oscillator that generates ultrasonic vibration is connected to the vibrator.

  When a wafer is cleaned in such an ultrasonic cleaning apparatus, ultrasonic vibration is generated by an ultrasonic oscillator on a vibrator attached to the bottom of the cleaning tank while supplying a cleaning liquid into the cleaning tank. As a result, ultrasonic vibration is propagated to the cleaning liquid, and the wafer is irradiated with ultrasonic waves from below, and particles and the like attached to the wafer are removed. In this way, the wafer is cleaned by ultrasonic waves.

JP 2003-209086 A

  However, when performing ultrasonic cleaning processing on a wafer in such an ultrasonic cleaning processing apparatus, the wafer is held by a wafer board. In this case, a wafer board holding rod exists below the wafer. Thereby, the ultrasonic vibration irradiated from below is shielded by the holding rod of the wafer board. That is, the ultrasonic vibration propagated from the vibrator is highly straight. This makes it difficult for ultrasonic vibrations to propagate to the upper region of the wafer board holding rod in the wafer, making it difficult to uniformly ultrasonically clean the entire area of the wafer.

  Similarly, even in a substrate processing apparatus that does not use ultrasonic waves, since the wafer is held by the wafer board during the cleaning process, it becomes difficult to clean the wafer in the region near the holding rod of the wafer board. . For this reason, it has been difficult to uniformly clean the entire area of the wafer.

  The present invention has been made in consideration of the above, and a substrate processing apparatus, a substrate processing method, and a computer program for executing the substrate processing method capable of uniformly cleaning the entire area of the substrate An object of the present invention is to provide a recording medium on which is recorded.

  The present invention includes a cleaning tank for storing a cleaning liquid, and a substrate holding device that is provided so as to be able to be carried into the cleaning tank, and that holds the substrate and immerses it in the cleaning liquid. A first substrate holding portion and a second substrate holding portion, wherein the first substrate holding portion and the second substrate holding portion are a first holding rod and a first holding rod with respect to a vertical axis passing through the center of the substrate; Each has a second holding rod provided on the opposite side, and the second holding rod of the first substrate holding portion is the second holding rod of the second substrate holding portion and the second holding rod of the second substrate holding portion. The substrate processing apparatus is characterized in that the first substrate holding unit and the second substrate holding unit are arranged between the holding rods and each can hold the substrate independently.

  In the present invention, the first substrate holding portion and the second substrate holding portion are provided between the first holding rod and the second holding rod, respectively, and hold the substrate together with the first holding rod and the second holding rod. A substrate processing apparatus having a third holding rod.

  In the present invention, the third holding rod of the first substrate holding portion is disposed between the first holding rod of the first substrate holding portion and the second holding rod of the second substrate holding portion. In the substrate processing apparatus, the third holding rod of the substrate holding unit is disposed between the first holding rod of the second substrate holding unit and the second holding rod of the first substrate holding unit. is there.

  In the present invention, the second holding rod and the third holding rod of the first substrate holding portion and the second substrate holding portion are provided with V-shaped grooves having a V-shaped cross section that can be engaged with the substrate, A substrate processing apparatus, wherein a first holding rod of a first substrate holding part and a second substrate holding part is provided with a Y-shaped groove having a Y-shaped cross section engageable with a substrate. .

The present invention controls a vibrator provided at the bottom of a cleaning tank, an ultrasonic oscillation device that generates ultrasonic vibration in the vibrator, a driving device that drives a substrate holding device, and the driving device and the ultrasonic oscillation device. And a control device that immerses the substrate held by the first substrate holding portion and the second substrate holding portion in the cleaning liquid in the cleaning tank, and then attaches the first substrate holding portion to the substrate. The first holding position is moved to the first side position located to the side of the first holding position, and then returned to the first holding position. Further, the second substrate holding unit holds the substrate. The drive device is controlled to move from the second holding position to a second side position located to the side of the second holding position and then return to the second holding position, and the first substrate holding unit is When the second substrate holding part is located at one side position A region where ultrasonic vibration is generated in the vibrator when the two side positions are located, and the ultrasonic vibration from the vibrator is held by the first substrate holding portion and the second substrate holding portion of the substrate. The substrate processing apparatus is characterized in that the ultrasonic oscillation device is controlled so as to propagate to the substrate.

  In the present invention, when the control device moves the first substrate holding portion between the first holding position and the first lateral position, the control device passes through the first lowered position located below the first holding position, When the second substrate holding unit is moved between the second holding position and the second lateral position, the driving device is controlled so as to pass through a second lowered position located below the second holding position. The substrate processing apparatus.

  In the present invention, the control device moves the first substrate holding part between the first lowered position and the first lateral position, and moves the second substrate holding part to the second lowered position and the second lateral side. The substrate processing apparatus is characterized in that the ultrasonic oscillator is controlled so as to generate ultrasonic vibrations in the vibrator even while being moved between the positions.

  The present invention includes a step of immersing a substrate held by a first substrate holding unit and a second substrate holding unit of a substrate holding device in a cleaning liquid in a cleaning tank, and holding the substrate in a second substrate holding unit, A substrate processing method comprising: a step of moving a substrate holding portion; and a step of supplying a cleaning liquid into a cleaning tank and cleaning the substrate.

  The present invention further includes, after the step of moving the first substrate holding unit, a step of holding the substrate on the first substrate holding unit and moving the second substrate holding unit. It is.

  According to the present invention, in the step of moving the first substrate holding portion, the first substrate holding portion moves from a first holding position holding the substrate to a first side position positioned on the side of the first holding position. Then, in the step of returning to the first holding position and moving the second substrate holding part, the second substrate holding part is located on the side of the second holding position from the second holding position for holding the substrate. The substrate processing method is characterized in that the substrate is moved to the second lateral position and then returned to the second holding position.

  The present invention is a substrate processing method characterized in that, in the step of cleaning a substrate, ultrasonic vibration is generated in a vibrator provided at the bottom of the cleaning tank to ultrasonically clean the substrate.

  According to the present invention, the step of cleaning the substrate is performed when the first substrate holding part is located at the first side position and when the second substrate holding part is located at the second side position. The substrate processing method is characterized in that ultrasonic vibration from a vibrator is propagated to a region of the substrate held by the first substrate holding unit and the second substrate holding unit.

  According to the present invention, in the step of moving the first substrate holding portion, the first lowering position located below the first holding position is passed, and the step of moving the second substrate holding portion is below the second holding position. The substrate processing method is characterized in that it passes through a second lowered position located at the position.

  According to the present invention, in the step of cleaning the substrate, the first substrate holding unit is moved between the first lowered position and the first lateral position, and the second substrate holding unit is moved to the second lowered position. The substrate processing method is also performed while being moved between the second side position and the second side position.

  The present invention is a recording medium on which a computer program for executing a substrate processing method is recorded. The substrate processing method includes a substrate held by a first substrate holding unit and a second substrate holding unit of a substrate holding device. A step of immersing the substrate in the cleaning liquid in the cleaning tank, a step of holding the substrate on the second substrate holding unit and moving the first substrate holding unit, and a step of supplying the cleaning liquid to the cleaning tank and cleaning the substrate And a recording medium.

  According to the present invention, the entire region of the substrate can be uniformly cleaned.

FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a side sectional view of FIG. FIG. 3 is a plan view of FIG. FIG. 4 is a view showing a discharge valve mechanism in the embodiment of the present invention. FIG. 5 is a diagram showing the configuration of the wafer board in the embodiment of the present invention. FIG. 6A is a diagram showing V-shaped grooves provided in the second holding rod and the third holding rod in the embodiment of the present invention, and FIG. 6B is a diagram showing the first holding rod. It is a figure which shows the Y-shaped groove | channel provided. FIG. 7 is a diagram showing a state in which a wafer is carried into a cleaning tank in the substrate processing method according to the embodiment of the present invention. FIG. 8 is a diagram showing a state where the wafer is immersed in the cleaning liquid in the cleaning tank in the substrate processing method according to the embodiment of the present invention. FIG. 9 is a diagram illustrating a state in which the first wafer holding unit has moved to the first lowered position in the substrate processing method according to the embodiment of the present invention. FIG. 10 is a diagram illustrating a state where the first wafer holding unit has moved to the first lateral position in the substrate processing method according to the embodiment of the present invention. FIG. 11 is a diagram illustrating a state in which the first wafer holding unit has moved to the first lowered position in the substrate processing method according to the embodiment of the present invention. FIG. 12 is a diagram showing a state where the wafer is held by the first wafer holding unit and the second wafer holding unit in the substrate processing method according to the embodiment of the present invention.

  Embodiments of the present invention will be described below with reference to the drawings. 1 to 12 are diagrams for explaining an embodiment of a substrate processing apparatus, a substrate processing method, and a recording medium on which a computer program for executing the substrate processing method is recorded in the present embodiment. is there.

  First, the overall configuration of the substrate processing apparatus 1 will be described with reference to FIG.

  As shown in FIG. 1, a substrate processing apparatus (ultrasonic cleaning processing apparatus) 1 is provided with a cleaning tank 10 for storing a cleaning liquid (for example, pure water or a chemical solution) and a cleaning tank 10 that can be carried into the cleaning tank 10. A wafer board (substrate holding device) 20 that holds a semiconductor wafer (hereinafter simply referred to as a wafer W) and immerses it in a cleaning liquid is provided. Among these, the vibrator 40 is provided on the outer surface of the bottom plate (bottom part) 14 of the cleaning tank 10. An ultrasonic oscillating device 42 is connected to the vibrator 40 and is configured to generate ultrasonic vibration in the vibrator 40.

  The cleaning tank 10 is provided with a cleaning liquid supply device 60 that supplies the cleaning liquid into the cleaning tank 10, and the bottom plate 14 of the cleaning tank 10 is provided with a discharge valve mechanism 80 that discharges the cleaning liquid.

  Next, the detailed structure of each part will be described with reference to FIGS.

  As shown in FIG. 1 to FIG. 4, the washing tank 10 is in close contact with the four side walls 11 and the lower end of each side wall 11 through a packing 12 in an air-watertight (airtight / watertight) manner and fixed with fixing bolts 13. And is formed in a substantially rectangular parallelepiped shape. Of these, a notch groove 15 is formed at the upper end of the side wall 11, and the cleaning liquid flows out of the cleaning tank 10 when the level of the cleaning liquid reaches the upper end of the side wall 11.

  The side wall 11 of the cleaning tank 10 is formed of a material having high chemical resistance, such as polytetrafluoroethylene (PTFE) or fluororesin (PFA). The bottom plate 14 is formed of a material having high chemical resistance and sound wave transmission property, for example, a carbon-based material such as amorphous carbon or silicon carbide. As a result, even when ammonia hydrogen peroxide, hydrochloric acid hydrogen peroxide, dilute hydrofluoric acid, or the like, which will be described later, is used as the chemical solution, the side wall 11 and the bottom plate 14 of the cleaning tank 10 can have chemical resistance. For this reason, it can prevent that the side wall 11 and the baseplate 14 melt | dissolve with a washing | cleaning liquid, and can prevent that a metal contamination etc. generate | occur | produce. In addition, since the material of the bottom plate 14 also has sound wave permeability as described above, the ultrasonic vibration generated by the vibrator 40 can be reliably transmitted.

  The cleaning tank 10 is accommodated in a container 16. A pan (not shown) for collecting the cleaning liquid flowing out from the notch groove 15 formed at the upper end of the side wall 11 of the cleaning tank 10 is provided at the bottom of the container 16, and the recovered cleaning liquid is discharged to this pan. A drain (not shown) is provided.

  In addition, it is not restricted to the above structures, The washing tank 10 may have the inner tank which stores a washing | cleaning liquid, and the outer tank which collect | recovers the washing | cleaning liquid which overflows from an inner tank. In this case, the outer tank may be connected to a circulation pipe for supplying the cleaning liquid to the cleaning liquid supply nozzle disposed in the inner tank, or a discharge valve mechanism for discharging the cleaning liquid to the outer tank is provided. Also good.

  As shown in FIGS. 2 and 5, the wafer board 20 is provided symmetrically in the planar shape shown in FIG. 2 with respect to a vertical axis X (see FIGS. 7 to 12) passing through the center of the wafer W. The first wafer holding unit (first substrate holding unit) 20a and the second wafer holding unit (second substrate holding unit) 20b are individually movable.

  The first wafer holding portion 20a and the second wafer holding portion 20b are parallel to the first holding rods 21a and 21b extending in the horizontal direction and the first holding rods 21a and 21b, and are perpendicular to the vertical axis X of the wafer W. On the other hand, it has 2nd holding rod 22a, 22b provided in the opposite side to 1st holding rod 21a, 21b, respectively. Of these, the first holding bars 21a and 21b are located above the second holding bars 22a and 22b (and above the third holding bars 23a and 23b, which will be described later), as shown in FIGS. ).

  The second holding bar 22a of the first wafer holding unit 20a is disposed between the first holding bar 21b and the second holding bar 22b of the second wafer holding unit 20b. In this case, the second holding bar 22b of the second wafer holding unit 20b is disposed between the first holding bar 21a and the second holding bar 22a of the first wafer holding unit 20a, and each of the second holding bars 22a and 22b. Are arranged in a cross manner.

  Further, between the first holding bar 21a and the second holding bar 22a of the first wafer holding unit 20a, specifically, between the first holding bar 21a and the second holding bar 22b of the second wafer holding unit 20b. A third holding rod 23a is provided between them. The third holding bar 23a extends in parallel to the first holding bar 21a and the second holding bar 22a, and holds the wafer W together with the first holding bar 21a and the second holding bar 22a.

  Similarly, between the first holding bar 21b and the second holding bar 22b of the second wafer holding unit 20b, specifically, between the first holding bar 21b and the second holding bar 22a of the first wafer holding unit 20a. A third holding rod 23b is provided between them. The third holding bar 23b extends in parallel to the first holding bar 21b and the second holding bar 22b, and holds the wafer W together with the first holding bar 21b and the second holding bar 22b. As shown in FIG. 5, the first holding bar 21b is located above the second holding bar 22b and the third holding bar 23b.

  A base portion 24a extending in a substantially vertical direction is connected to the base ends of the holding rods 21a, 22a and 23a of the first wafer holding portion 20a, and connecting members are connected to the tip ends of the first holding rod 21a and the third holding rod 23a. 25a is connected. Similarly, base portions 24b extending in a substantially vertical direction are connected to the base ends of the holding rods 21b, 22b, and 23b of the second wafer holding portion 20b, and are connected to the tip ends of the first holding rod 21b and the third holding rod 23b. The connecting member 25b is connected. Among these, the tip side (lower side) of the base 24b of the second wafer holding part 20b has a stepped shape so as to approach the wafer W side. In this way, the second wafer holding rods 22a and 22b are connected to the base portions 24a and 24b without contacting each other. Further, in the base 24a of the first wafer holding unit 20a, a recess 26a is formed between the second holding bar 22a and the third holding bar 23a. Similarly, a recess 26b is formed between the second holding bar 22b and the third holding bar 23b in the base 24b of the second wafer holding part 20b. Among these, the gap between the concave portion 26b and the second holding rod 22b is such that the second wafer holding portion 20b described later is lowered from the second holding position to the second lowered position, and the first wafer holding portion 20a is raised. In this case, the base 24b of the second wafer holding part 20b is prevented from coming into contact with the second holding rod 22a of the first wafer holding part 20a.

  In this way, each of the first wafer holding unit 20a and the second wafer holding unit 20b can hold a plurality of (for example, 50) wafers W independently.

  As shown in FIG. 6A, the second holding rods 22a and 22b and the third holding rods 23a and 23b are provided with a plurality of V-shaped grooves 27 having a V-shaped cross section that can be engaged with the wafer W. It has been. Here, the second holding rods 22a and 22b and the third holding rods 23a and 23b are located below the first holding rods 21a and 21b. As a result, the load of the wafer W can be received by the V-shaped groove 27, and foreign matter such as particles can be prevented from being generated.

  As shown in FIG. 6B, the first holding rods 21 a and 21 b are provided with a plurality of Y-shaped grooves 28 having a Y-shaped cross section that can be engaged with the wafer W. The Y-shaped groove 28 is provided on the opening side taper surface 28a having a large inclination angle with respect to the wafer W to be engaged, and on the back side of the opening side taper surface 28a. Is formed with a rear tapered surface 28b having a relatively small groove width and a Y-shaped cross section. By engaging the wafer W with the Y-shaped groove 28, the wafer W can be engaged with the back side tapered surface 28 b with a narrow groove width, and the wafer W can be reliably engaged. Further, since the Y-shaped groove 28 is located above the V-shaped groove 27 that receives a load, the wafer W can be effectively prevented from falling. Thus, the wafer board 20 can stably hold the wafer W upright in the vertical direction.

  Here, each part of the wafer board 20 is formed using quartz having high chemical resistance, and a Teflon coating or a SiC (silicon carbide) coating is applied to each surface.

  As shown in FIG. 5, a driving device 30 that drives the wafer board 20 to move up and down is connected to the wafer board 20. That is, the driving device 30 is provided between the elevating drive units 31a and 31b that elevate and lower the first wafer holding unit 20a and the second wafer holding unit 20b, and between the elevating drive units 31a and 31b and the bases 24a and 24b, respectively. The lift driving force transmitting portions 32a and 32b are connected to transmit the driving force of the lift driving portions 31a and 31b. Among these, each raising / lowering driving force transmission part 32a, 32b is each connected with the base parts 24a, 24b via the adapters 33a, 33b. In this way, the first wafer holding part 20a and the second wafer holding part 20b are configured to be movable (movable up and down) individually. The positional relationship between the first wafer holding unit 20a and the second wafer holding unit 20b can be adjusted by using the lift drive units 31a and 31b.

  A control device 44 (see FIGS. 1 and 2) is connected to each of the lift drive units 31a and 31b. In this manner, the elevation drive units 31a and 31b lower the first wafer holding unit 20a and the second wafer holding unit 20b in synchronization with each other based on the control signal from the control device 44, thereby cleaning the wafer W in the cleaning tank. The first wafer holder 20a and the second wafer holder 20b are moved up in synchronization and carried out of the cleaning tank 10 by being carried into the cleaning liquid 10 and immersed in the cleaning liquid.

  In addition, the first wafer holding unit 20a has a driving device 30 between a first holding position that holds the wafer W in the cleaning tank 10 and a first lowered position that is slightly below the first holding position. Thus, it is configured to be movable (movable up and down) in a substantially vertical direction. Similarly, the second wafer holding unit 20b has a driving device between a second holding position that holds the wafer W in the cleaning tank 10 and a second lowered position that is slightly below the second holding position. 30 is configured to be movable in a substantially vertical direction. As described above, based on the control signal from the control device 44, the first wafer holding unit 20a is moved between the first holding position and the first lowered position by the elevating drive unit 31a, and the second wafer holding unit 20b. Is moved between the second holding position and the second lowered position by the elevating drive unit 31b.

Furthermore, the first wafer holder 20a has a first lowered position, between the first lateral position located laterally of the first holding position, it is movably configured in a substantially horizontal direction. That is, the first wafer holding part 20a is movable in the right direction shown in FIG. 2 to a position where the second holding bar 22a is close to the second holding bar 22b of the second wafer holding part 20b. Similarly, the second wafer holding unit 20b is configured to be movable in a substantially horizontal direction between a second lowered position and a second side position located to the side of the second holding position. That is, the second wafer holding part 20b is movable in the left direction shown in FIG. 2 to a position where the second holding bar 22b is close to the second holding bar 22a of the first wafer holding part 20a. In this way, the first wafer holding part 20a and the second wafer holding part 20b are configured to be individually movable in the substantially horizontal direction.

  The driving device 30 connected to the wafer board 20 is configured to move the first wafer holding unit 20a and the second wafer holding unit 20b between the lowered positions and the side positions. That is, the drive device 30 includes a lateral movement drive unit 34a that moves the first wafer holding unit 20a between the first lowered position and the first lateral position, and the lateral movement drive unit 34a and the elevation drive force transmission. A side driving force transmitting portion 35a is connected between the portion 32a and transmits the driving force of the lateral movement driving portion 34a. Similarly, the driving device 30 includes a side movement drive unit 34b that moves the second wafer holding unit 20b between the second lowered position and the second side position, and the side movement drive unit 34b and the elevation drive. A side drive force transmission unit 35b is connected between the force transmission unit 32b and transmits the driving force of the lateral movement drive unit 34b.

  A control device 44 is connected to each lateral movement drive unit 34a, 34b. In this manner, the lateral movement drive units 34a and 34b move the first wafer holding unit 20a and the second wafer holding unit 20b to the lowered positions and the side positions based on the control signal from the control device 44. It is comprised so that it may each move between.

  The cleaning liquid supply device 60 has two cleaning liquid supply nozzles 61 provided along the opposite side walls 11 of the cleaning tank 10. Each of the cleaning liquid supply nozzles 61 has a tubular nozzle body 61a extending in a substantially horizontal direction on the side wall 11 of the cleaning tank 10, and a plurality of cleaning liquid supply nozzles 61 formed in the tubular nozzle body 61a and arranged at appropriate intervals along the longitudinal direction. The first nozzle hole 61b and the second nozzle hole 61c are included. Among these, the first nozzle hole 61 b is configured to inject the cleaning liquid toward the center side of the wafer W, and the second nozzle hole 61 c is configured to inject the cleaning liquid toward the bottom plate 14 of the cleaning tank 10. Has been. For example, four cleaning liquid supply nozzles 61 may be provided in the cleaning tank 10.

  A switching valve 63 is connected to the cleaning liquid supply nozzle 61 via a cleaning liquid supply pipe 62. A pure water supply source 65 is connected to the switching valve 63 via a pure water supply pipe 64, and a chemical liquid supply source (chemical liquid tank) 67 is connected via a chemical liquid supply pipe 66. The switching valve 63 is connected to the control device 44, and the control device 44 controls switching of the supply pipe (the pure water supply pipe 64 or the chemical liquid supply pipe 66) that communicates with the cleaning liquid supply pipe 62 via the switching valve 63. It has become.

  The pure water supply pipe 64 is provided with an opening / closing valve 68 that adjusts the flow rate of pure water passing through the pure water supply pipe 64. The on-off valve 68 is connected to the control device 44, and the control device 44 controls the supply of pure water from the pure water supply source 65 to the cleaning tank 10 through the on-off valve 68.

A chemical solution pump 69 for supplying the chemical solution to the cleaning tank 10 is provided in the chemical solution supply pipe 66. The chemical solution pump 69 is connected to the control device 44, and the control device 44 controls supply of the chemical solution from the chemical solution tank 67 to the cleaning tank 10 via the chemical solution pump 69. Here, as the chemical solution, depending on the purpose of cleaning, ammonia perwater (SC1, specifically NH ₄ OH / H ₂ O ₂ / H ₂ O), hydrochloric acid perwater (SC2, specifically HCl / H ₂ O ₂ / H ₂ O) or dilute hydrofluoric acid (DHF) is used.

Without using such a chemical pump 69, nitrogen (N ₂ ) gas or the like is supplied into the chemical tank 67 based on a control signal from the control device 44 to supply the chemical to the chemical supply pipe 66. You may comprise. Further, the number of chemical liquid tanks 67 connected to the switching valve 63 is not limited to one, and a plurality of chemical liquid tanks 67 may be connected. In this case, a plurality of types of chemical solutions can be supplied to the cleaning tank 10.

  As shown in FIGS. 3 and 4, two discharge valve mechanisms 80 for discharging the cleaning liquid are provided on the bottom plate 14 of the cleaning tank 10. Each discharge valve mechanism 80 includes a contacted portion 81 attached to the outer surface of the bottom plate 14, a valve body 82 that can be in contact with the contacted portion 81 in an air-watertight manner, and a piston rod that drives the valve body 82. And a cylinder device 84 including 83. A drainage port 85 is formed through the contacted portion 81 and the bottom plate 14. The control device 44 is connected to the cylinder device 84, and the cylinder device 84 is configured to drive the valve element 82 based on a control signal from the control device 44. The drainage port 85 is disposed at a position directly below the base of the wafer board 20. Accordingly, the discharge valve mechanism 80 is not disposed at a position corresponding to the wafer W on the outer surface of the bottom plate 14 of the cleaning tank 10, the vibrator 40 can be attached, and the wafer W is reliably cleaned. Can do. In addition, in this Embodiment, although the drainage port 85 is formed in the rectangular shape, it can also be made into arbitrary shapes, such as circular. Further, the number of discharge valve mechanisms 80 provided in the cleaning tank 10 is not limited to two, and may be one or three or more.

  As shown in FIG. 1 and FIG. 2, the vibrator 40 of the cleaning tank 10 includes a plurality of vibrator single bodies 41, and the plurality of vibrator single bodies 41 are attached to the outer surface of the bottom plate 14 of the cleaning tank 10. Each transducer unit 41 is connected to form a transducer 40 and is connected to the ultrasonic oscillator 42. The number of the single vibrator 41 attached to the cleaning tank 10 may be one as long as it can occupy a position corresponding to the wafer W held on the wafer board 20 on the outer surface of the bottom plate 14 of the cleaning tank 10. Any number can be used.

  As described above, the vibrator 40 is directly attached to the bottom plate 14 of the cleaning tank 10, but this is not a limitation, and at least the bottom of the cleaning tank 10 is immersed below the cleaning tank 10. Thus, an additional tank (not shown) that stores pure water may be provided, and the vibrator 40 may be attached to the bottom of the additional tank. In this case, the ultrasonic vibration generated from the vibrator 40 is transmitted to the cleaning tank 10 through the pure water of the additional tank, and the wafer W can be reliably ultrasonically cleaned in the cleaning tank 10.

  Further, as described above, in the present embodiment, the bottom plate 14 of the cleaning tank 10 is formed of amorphous carbon or silicon carbide, and the bottom plate 14 is relatively thick (for example, 6.5 mm) to vibrate. The child 40 is directly attached. However, the present invention is not limited to this, and the thickness of the bottom plate 14 is made thinner than this, and the vibrator 40 is attached to the bottom plate 14 with a stainless steel reinforcing plate having good sound wave permeability interposed therebetween. May be. Even in this case, the ultrasonic waves from the transducer 40 can be transmitted efficiently.

  As shown in FIGS. 1 and 2, an ultrasonic oscillator 42 is connected to the transducer 40, and a drive power supply unit 43 that supplies power is connected to the ultrasonic oscillator 42. Further, a control device 44 is connected to the ultrasonic oscillation device 42, and the ultrasonic oscillation device 42 is configured to send high-frequency drive power (drive signal) to the vibrator 40 based on an instruction from the control device 44. Yes.

  The control device 44 holds the wafer W in the first wafer holding unit 20a after the wafer W held by the first wafer holding unit 20a and the second wafer holding unit 20b is immersed in the cleaning liquid in the cleaning tank 10. The drive device 30 is controlled to move from the first holding position to the first lateral position via the first lowering position and then return to the first holding position via the first lowering position. The first wafer holding unit 20a that has returned to the first holding position holds the wafer W together with the second wafer holding unit 20b. Thereafter, the control device 44 moves the second wafer holding unit 20b from the second holding position for holding the wafer W to the second side position via the second lowered position, and then the second lowered position. The drive device 30 is controlled so as to return to the second holding position via.

  The controller 44 controls the first wafer holding unit 20a while the first wafer holding unit 20a is moving between the first lowered position and the first lateral position, and the second wafer holding unit 20b is moved to the second lowered position and the second lateral position. The ultrasonic oscillator 42 is controlled so as to cause the vibrator 40 to generate ultrasonic vibration while moving between the two. In this way, the ultrasonic vibration from the transducer 40 is propagated to the area (shielded area) held by the first wafer holding part 20a and the second wafer holding part 20b in the wafer W. Yes.

  In the present embodiment, the control device 44 includes a computer, and the computer executes a program stored in advance in the recording medium 45 so that the wafer W is cleaned using the substrate processing apparatus 1. It has become.

  Next, the operation of the present embodiment having such a configuration, that is, the substrate processing method according to the present embodiment will be described with reference to FIGS.

  First, the cleaning liquid is stored in the cleaning tank 10 (first step). In this case, first, as shown in FIG. 1, the open / close valve 68 is opened in response to a control signal from the control device 44, and pure water is supplied from the pure water supply source 65 to the cleaning liquid supply nozzle 61 through the switching valve 63. The At this time, the switching valve 63 is controlled by the control device 44, and the pure water supply pipe 64 is communicated with the cleaning liquid supply pipe 62.

  After supplying pure water, the chemical liquid pump 69 is driven in response to a control signal from the controller 44, and the chemical liquid is supplied from the chemical liquid tank 67 to the cleaning liquid supply nozzle 61 via the switching valve 63. At this time, the switching valve 63 is controlled by the control device 44, and the chemical liquid supply pipe 66 is communicated with the cleaning liquid supply pipe 62.

  When the liquid level of the stored cleaning liquid reaches the notch groove 15 provided at the upper end of the side wall 11 of the cleaning tank 10, the cleaning liquid flows out of the cleaning tank 10 through the notch groove 15. The cleaning liquid that has flowed out is collected in a pan (not shown) of the container 16 that houses the cleaning tank 10, and is discharged from a drain (not shown) to the outside of the container 16. Even after this, the supply of the chemical solution from the chemical solution tank 67 is continued.

  Next, the wafer W held by the first wafer holding unit 20a and the second wafer holding unit 20b of the wafer board 20 is immersed in the cleaning liquid in the cleaning tank 10 (second step). In this case, first, a plurality of (for example, 50) wafers W transferred by a transfer mechanism (not shown) are arranged at substantially the same height. First wafer holding unit 20a and second wafer holding unit 20b of wafer board 20 are arranged. Held by. In this case, the wafer W engages with the V-shaped groove 27 formed in the second holding rods 22a and 22b and the third holding rods 23a and 23b, and the Y formed in the first holding rods 21a and 21b. Engages with the groove 28. Next, in response to a control signal from the control device 44, the elevating drive units 31a and 31b are driven in synchronization, and the first wafer holding unit 20a and the second wafer holding unit 20b are lowered and carried into the cleaning tank 10. (See FIG. 7). In this way, the wafer W is immersed in the cleaning liquid (see FIG. 8). At this time, the first wafer holding part 20a and the second wafer holding part 20b are respectively located at the first holding position and the second holding position for holding the wafer W.

  Next, the wafer W is held by the second wafer holding portion 20b of the wafer board 20, and the first wafer holding portion 20a is moved from the first holding position where the wafer W is held via the first lowered position. It moves to one side position, and then returns to the first holding position via the first lowered position.

  In this case, first, as shown in FIG. 9, the first wafer holding unit 20 a of the wafer board 20 is lowered from the position where the wafer W is held, and the second wafer holding unit 20 b holds the wafer W. It rises in the state (3rd process). At this time, the first wafer holding unit 20a is in a first lowered position located below the first holding position where the wafer W was held. As a result, the first wafer holding unit 20a is separated from the wafer W, and the wafer W is held only by the second wafer holding unit 20b. Thereafter, the first wafer holding unit 20a moves between the first lowered position and the first lateral position. It is possible to prevent the wafer holding unit 20a from coming into contact with the wafer W.

  Next, the first wafer holding unit 20a receives the control signal from the control device 44, and the side movement driving unit 34a is driven, so that the first side located at the side of the first lowered position and the first holding position. Continuously between the two positions (fourth step). That is, the first wafer holding unit 20a moves from the first lowered position to the right in FIG. 10 to reach the first lateral position (see FIG. 10), and then moves to the left to move to the first lowered position. Return to (see FIG. 11). During this time, the second wafer holding unit 20b is stopped while holding the wafer W. The number of times the first wafer holding unit 20a reciprocates between the first lowered position and the first side position is not limited to one, and may be a plurality of times.

  While the first wafer holding unit 20a continuously moves between the first lowered position and the first lateral position, the control device 44 causes the vibrator 40 to generate ultrasonic vibration (fifth step). . In this case, high frequency driving power (drive signal) is sent from the ultrasonic oscillator 42 to the vibrator 40 of the cleaning tank 10 to cause ultrasonic vibration in the vibrator 40 and the wafer W is ultrasonically cleaned. . Thus, ultrasonic cleaning can be efficiently performed in a short time by generating ultrasonic vibration while moving the first wafer holding unit 20a.

  Further, while the vibrator 40 is ultrasonically vibrated, the ultrasonic vibration is transmitted through the bottom plate 14 of the cleaning tank 10 to the cleaning liquid. In this way, particles and the like attached to the wafer W are removed. During this time, the chemical solution continues to be supplied into the cleaning tank 10. Thus, particles removed from the wafer W and floating on the surface of the cleaning liquid can flow out of the notch groove 15 of the cleaning tank 10 together with the overflowing cleaning liquid. For this reason, the cleaning liquid can be maintained in a clean state, and the cleaning efficiency of the wafer W can be improved.

  In this way, while the first wafer holding unit 20a is continuously moving between the first lowered position and the first lateral position, the ultrasonic vibration from the vibrator 40 is applied to the first of the wafers W. The ultrasonic vibration can be propagated to the area shielded by the one wafer holding unit 20a.

  Next, as shown in FIG. 12, the first wafer holding unit 20 a moves up from the first lowered position and returns to the first holding position that holds the wafer W, and the second wafer holding unit 20 b holds the wafer W. In the held state, it descends and returns to the second holding position (sixth step). In this case, the first wafer holding unit 20a and the second wafer holding unit 20b have substantially the same height, whereby the wafer W is held by the first wafer holding unit 20a and the second wafer holding unit 20b.

  Next, the wafer W is held by the first wafer holding part 20a of the wafer board 20, and the second wafer holding part 20b is moved from the second holding position where the wafer W is held via the second lowered position. Move to the 2 side position, and then return to the second holding position via the second lowered position.

  In this case, first, the second wafer holding unit 20b is lowered from the position where the wafer W is held, and the first wafer holding unit 20a is raised while holding the wafer W (seventh step). At this time, the second wafer holding unit 20b is in a second lowered position located below the second holding position where the wafer W is held. Thus, the second wafer holding unit 20b is separated from the wafer W, and the wafer W is held only by the first wafer holding unit 20a.

  Next, the second wafer holding unit 20b receives the control signal from the control device 44, the side movement driving unit 34b is driven, and continuously moves between the second lowered position and the second side position. (Eighth step). That is, the second wafer holding unit 20b moves from the second lowered position to the left in FIG. 10 to reach the second lateral position, and then moves to the right and returns to the second lowered position. The number of times the second wafer holding unit 20b reciprocates between the second lowered position and the second side position is not limited to one, and may be a plurality of times.

  While the second wafer holding unit 20b is continuously moving between the second lowered position and the second lateral position, the control device 44 causes the vibrator 40 to generate ultrasonic vibration (9th step). .

  In this way, while the second wafer holding unit 20b is continuously moving between the second lowered position and the second lateral position, the ultrasonic vibration from the vibrator 40 is transmitted to the first of the wafers W. The ultrasonic vibration can be propagated to the area shielded by the two-wafer holding part 20b.

  Next, as shown in FIG. 12, the second wafer holding unit 20 b moves up from the second lowered position and returns to the second holding position that holds the wafer W, and the first wafer holding unit 20 a holds the wafer W. In the held state, it descends and returns to the first holding position (tenth step). In this case, the first wafer holding unit 20a and the second wafer holding unit 20b have substantially the same height, whereby the wafer W is held by the first wafer holding unit 20a and the second wafer holding unit 20b. .

  Thereafter, rinsing processing of the wafer W in the cleaning tank 10 is performed (11th step). In this case, first, the chemical liquid pump 69 is stopped, and the supply of the chemical liquid to the cleaning tank 10 is stopped. Next, the control device 44 opens the on-off valve 68 and operates the switching valve 63 so that pure water is supplied from the pure water supply source 65 to the cleaning tank 10. Thereafter, ultrasonic vibration is propagated to the cleaning liquid while moving the first wafer holding unit 20a or the second wafer holding unit 20b in the same manner as the third to tenth steps.

  Next, the wafer W immersed in the cleaning liquid is unloaded from the cleaning tank 10 (a twelfth step). In this case, in response to a control signal from the control device 44, the lift drive units 31a and 31b are driven in synchronism, and the first wafer holding unit 20a and the second wafer holding unit 20b holding the wafer W are lifted and cleaned. The wafer W is unloaded from the tank 10. Thereafter, the wafer W is delivered from the wafer board 20 to a transfer mechanism (not shown).

  By repeating the steps described above, the wafers W can be sequentially ultrasonically cleaned in the cleaning tank 10.

  Note that the cleaning liquid in the cleaning tank 10 is replaced as necessary. In this case, first, as shown in FIG. 3, the cylinder device 84 of the discharge valve mechanism 80 is driven based on the control signal from the control device 44, and the valve body 82 is pulled away from the contacted portion 81. As a result, the cleaning liquid is discharged through the liquid discharge port 85, and the cleaning liquid in the cleaning tank 10 can be discharged in a short time. After the discharge of the cleaning liquid is completed, the cylinder device 84 is driven to bring the valve body 82 into contact with the contacted portion 81, and the space between the contacted portion 81 and the valve body 82 is kept airtight. Thereafter, the cleaning liquid is stored in the cleaning tank 10 in the same manner as in the first step described above. In this way, the cleaning liquid is replaced.

  As described above, according to the present embodiment, the wafer board 20 holding the wafer W immersed in the cleaning liquid in the cleaning tank 10 can be moved individually by the first wafer holding unit 20a and the second wafer holding unit 20b. The first wafer holding unit 20a and the second wafer holding unit 20b can each hold the wafer W independently. Thus, after the wafer W held by the first wafer holding unit 20a and the second wafer holding unit 20b is immersed in the cleaning liquid in the cleaning tank 10, the wafer W is held only by the second wafer holding unit 20b. The first wafer holding unit 20a can be moved, and the wafer W can be held only by the first wafer holding unit 20a and the second wafer holding unit 20b can be moved. While the first wafer holder 20a is moving between the first lowered position and the first lateral position, and the second wafer holder 20b is moved between the second lowered position and the second lateral position. During this time, ultrasonic vibration is generated in the vibrator 40 provided on the bottom plate 14 of the cleaning tank 10. Thereby, the ultrasonic vibration from the vibrator 40 can be propagated to a region of the wafer W that is shielded by the first wafer holding unit 20a and the second wafer holding unit 20b. For this reason, ultrasonic vibration can be propagated uniformly over the entire area of the wafer W, and as a result, the entire area of the wafer W can be uniformly cleaned with ultrasonic waves.

  In addition, in the embodiment mentioned above, various deformation | transformation are possible within the range of the summary of this invention. Hereinafter, typical modifications will be described.

  That is, in the present embodiment, the example in which the first wafer holding unit 20a and the second wafer holding unit 20b have the third holding rods 23a and 23b has been described. However, the present invention is not limited to this, and the first wafer holding part 20a and the second wafer holding part 20b do not have the third holding bars 23a and 23b, but the first holding bars 21a and 21b and the second holding bars. The wafer W may be configured to be able to be held alone by using only 22a and 22b. Also in this case, since the second holding rods 22a and 22b are provided on the side opposite to the first holding rods 21a and 21b with respect to the vertical axis X passing through the center of the wafer W, the first wafer holding unit Each of the 20a and the second wafer holding unit 20b can hold the wafer W independently.

  In the present embodiment, the third holding bar 23a of the first wafer holding unit 20a includes the first holding bar 21a of the first wafer holding unit 20a and the second holding bar 22b of the second wafer holding unit 20b. The third holding bar 23b of the second wafer holding unit 20b is arranged between the first holding bar 21b of the second wafer holding unit 20b and the second holding bar 22a of the first wafer holding unit 20a. The example arrange | positioned between was demonstrated. However, the present invention is not limited to this, and although not shown, the third holding rod 23a of the first wafer holding unit 20a is replaced with the second holding rod 22a of the first wafer holding unit 20a and the second wafer holding unit 20b. The third holding bar 23b of the second wafer holding unit 20b is disposed between the second holding bar 22a and the third holding bar 23a of the first wafer holding bar 20a. You may make it arrange | position to.

  In the present embodiment, the second holding rods 22a, 22b and the third holding rods 23a, 23b are provided with V-shaped grooves 27, and the first holding rods 21a, 21b are provided with Y-shaped grooves 28. An example in which is provided has been described. However, the present invention is not limited to this, and the cross-sectional shape of the grooves provided in the first holding rods 21a and 21b, the second holding rods 22a and 22b, and the third holding rods 23a and 23b can be any shape. .

  Further, in the present embodiment, the control device 44 controls the vibrator 40 while the first wafer holding unit 20a and the second wafer holding unit 20b are continuously moving between the lowered positions and the side positions. An example of generating ultrasonic vibration has been described. However, the present invention is not limited to this, and the vibrator 40 vibrates ultrasonically only while the first wafer holding unit 20a and the second wafer holding unit 20b are moving from the lowered positions to the side positions. Alternatively, the transducer 40 may generate ultrasonic vibration only while the first wafer holding unit 20a and the second wafer holding unit 20b are moved from the respective side positions to the lowered positions. You may do it. In any case, the ultrasonic vibration from the vibrator 40 can be propagated to a region of the wafer W that is shielded by the first wafer holding unit 20a and the second wafer holding unit 20b.

  In the present embodiment, the example in which the first wafer holding unit 20a and the second wafer holding unit 20b of the wafer board 20 are continuously moved between the lowered positions and the side positions has been described. However, the present invention is not limited to this, and after the first wafer holding unit 20a and the second wafer holding unit 20b reach the respective side positions from the respective lowered positions, the first wafer holding unit 20a and the second wafer holding unit 20b are stopped for a predetermined time and thereafter You may make it move to each descending position from a direction position. Even in this case, the ultrasonic vibration from the vibrator 40 can be propagated to a region of the wafer W that is shielded by the first wafer holding unit 20a and the second wafer holding unit 20b.

  Further, as described above, when the first wafer holding unit 20a and the second wafer holding unit 20b that have reached the respective side positions are stopped for a predetermined time, the first wafer holding unit 20a and the second wafer holding unit 20b are connected to each side. The ultrasonic vibration may be generated in the vibrator 40 only while it is stopped at the one position. That is, the control device 44 immerses the wafer W in the cleaning liquid in the cleaning tank 10, and then moves the first wafer holding unit 20a from the first lowered position to the first lateral position to thereby move the first wafer holding unit 20a. Is in the first lateral position, the ultrasonic vibration is generated in the vibrator 40 and the second wafer holding section 20b is moved from the second lowered position to the second lateral position to hold the second wafer. The ultrasonic vibration may be generated in the vibrator 40 when the portion 20b is in the second lateral position. Also in this case, the ultrasonic vibration from the vibrator 40 is propagated to a region of the wafer W that is shielded by the first wafer holding unit 20a and the second wafer holding unit 20b, and the ultrasonic vibration is spread over the entire area of the wafer W. Can be propagated uniformly.

  In the present embodiment, the first wafer holder 20a of the wafer board 20 moves from the first holding position holding the wafer W to the first lateral position via the first lowered position, The example in which the second wafer holding unit 20b is lifted from the second holding position for holding the wafer W and maintained at this position while the first wafer holding unit 20a is moving has been described. However, the movement of the first wafer holding part 20a and the second wafer holding part 20b is not limited to this.

  Specifically, after the wafer W held by the first wafer holding unit 20a and the second wafer holding unit 20b is immersed in the cleaning liquid in the cleaning tank 10, the second wafer holding unit 20b is not raised and the first wafer holding unit 20b is lifted. The one wafer holding unit 20a may be simply lowered downward from the first holding position for holding the wafer W. That is, if the first wafer holding unit 20a is lowered from the first holding position to the first lowered position so as to avoid interference with the wafer W when moving sideways, the second wafer holding unit 20b The movement is not limited.

  In the present embodiment, the first wafer holding unit 20a and the second wafer holding unit 20b are moved from the holding positions to the side positions via the lowered positions located below the holding positions. An example of moving and returning from each lateral position to each holding position via each lowered position has been described. However, the present invention is not limited to this, and even if the first wafer holding unit 20a and the second wafer holding unit 20b are moved between the holding positions and the side positions without passing through the lowered positions. good. In this case, drive control of the first wafer holding unit 20a and the second wafer holding unit 20b can be simplified.

  Furthermore, in the present embodiment, the example in which the substrate processing apparatus 1 is configured as an ultrasonic cleaning processing apparatus and the wafer W is subjected to ultrasonic cleaning processing has been described. However, the present invention is not limited to this, and the present invention can also be applied to a substrate processing apparatus that cleans the wafer W without using ultrasonic waves. Even in this case, the vicinity of the first wafer holding unit 20a and the second wafer holding unit 20b in the wafer W can be reliably cleaned, and the entire area of the wafer W can be uniformly cleaned.

  Further, in the present embodiment, an example has been described in which the first wafer holding unit 20a and the second wafer holding unit 20b are sequentially moved to uniformly clean the entire area of the wafer W. However, the present invention is not limited to this. By moving at least one of the wafer holders, the region of the wafer W that has been shielded by the moved wafer holder can be reliably cleaned.

  Here, some modified examples of the above-described embodiment have been described, but a plurality of modified examples may be applied in an appropriate combination.

  Incidentally, as described above, the substrate processing apparatus 1 has the control device 44 including a computer. The control device 44 is configured so that each component of the substrate processing apparatus 1 operates and the wafer W is cleaned. A recording medium 45 that records a program executed by the computer of the control device 44 in order to perform the cleaning of the wafer W using the substrate processing apparatus 1 is also a subject of this case. Here, the recording medium 45 may be a memory such as a ROM or a RAM, or may be a disk-shaped recording medium 45 such as a hard disk or a CD-ROM.

  In the above description, the substrate processing apparatus 1 according to the present invention, the substrate processing method, and the recording medium 45 on which the computer program for executing the substrate processing method is recorded is applied to the cleaning process of the semiconductor wafer W. An example is shown. However, the present invention is not limited to this, and the present invention can be applied to cleaning various substrates such as an LCD substrate or a CD substrate.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Cleaning tank 11 Side wall 12 Packing 13 Fixing bolt 14 Bottom plate 15 Notch groove 16 Container 20 Wafer board 20a First wafer holding part 20b Second wafer holding part 21a, 21b First wafer holding rod 22a, 22b Second wafer Holding rods 23a, 23b Third wafer holding rods 24a, 24b Base portions 25a, 25b Connecting members 26a, 26b Recess 27 V-shaped groove 28 Y-shaped groove 28a Opening side taper surface 28b Back side taper surface 30 Driving devices 31a, 31b Drive unit 32a, 32b Elevating drive force transmission unit 33a, 33b Adapter 34a, 34b Side movement drive unit 35a, 35b Side drive force transmission unit 40 Transducer 41 Transducer unit 42 Ultrasonic oscillation device 43 Drive power supply unit 44 Control device 45 Recording medium 60 Cleaning liquid supply device 61 Cleaning liquid supply nozzle 61a Tubular nozzle body 6 b First nozzle hole 61c Second nozzle hole 62 Cleaning liquid supply pipe 63 Switching valve 64 Pure water supply pipe 65 Pure water supply source 66 Chemical liquid supply pipe 67 Chemical liquid tank 68 On-off valve 69 Chemical liquid pump 80 Discharge valve mechanism 81 Contacted portion 82 Valve body 83 Piston rod 84 Cylinder device 85 Drainage port W Wafer

Claims (15)

A cleaning tank for storing the cleaning liquid;
A substrate holding device provided so as to be able to be carried into the cleaning tank, and holding the substrate and immersing it in the cleaning liquid;
A driving device for driving the substrate holding device;
A control device for controlling the drive device ,
The substrate holding device has a first substrate holding portion and a second substrate holding portion that are individually movable,
The first substrate holding unit and the second substrate holding unit hold the substrate from below,
The first substrate holding portion and the second substrate holding portion each have a first holding rod and a second holding rod provided on the opposite side of the first holding rod with respect to a vertical axis passing through the center of the substrate. And
Among these, the second holding bar of the first substrate holding part is disposed between the first holding bar of the second substrate holding part and the second holding bar of the second substrate holding part,
The first substrate holder and the second substrate holder, respectively, Ri can hold der substrate alone,
The control device controls the driving device to move the first substrate holding unit while holding the substrate in the second substrate holding unit while the substrate is immersed in the cleaning liquid in the cleaning tank. Processing equipment.   The first substrate holding portion and the second substrate holding portion are provided between the first holding rod and the second holding rod, respectively, and a third holding for holding the substrate together with the first holding rod and the second holding rod. The substrate processing apparatus according to claim 1, further comprising a bar. The third holding rod of the first substrate holding unit is disposed between the first holding rod of the first substrate holding unit and the second holding rod of the second substrate holding unit,
The third holding bar of the second substrate holding part is arranged between the first holding bar of the second substrate holding part and the second holding bar of the first substrate holding part. 2. The substrate processing apparatus according to 2. A V-shaped groove having a V-shaped cross section engageable with the substrate is provided in the second holding rod and the third holding rod of the first substrate holding portion and the second substrate holding portion,
4. A Y-shaped groove having a Y-shaped cross section that is engageable with a substrate is provided in the first holding rod of the first substrate holding portion and the second substrate holding portion. 2. The substrate processing apparatus according to 1. A vibrator provided at the bottom of the cleaning tank;
An ultrasonic oscillator to generate ultrasonic vibration to the vibrator, further comprising a
Controller, while by immersing the substrate held in the cleaning liquid in the cleaning tank by the first substrate holding portion and the second substrate holder, by holding the substrate to the second substrate holder, a first substrate holder Is moved from the first holding position for holding the substrate to the first side position located on the side of the first holding position, and then returned to the first holding position. Further, the substrate is moved to the first substrate holding portion. To move the second substrate holding portion from the second holding position for holding the substrate to the second side position located to the side of the second holding position, and then return to the second holding position. And controlling the driving device so that when the first substrate holding part is located at the first side position and when the second substrate holding part is located at the second side position, Ultrasonic vibration is generated, and the ultrasonic vibration from the vibrator is applied to the first substrate holding portion of the substrate. Beauty substrate processing apparatus according to any one of claims 1 to 4, wherein the controller controls the ultrasonic oscillator to propagate in the area to be held by the second substrate holder.   When the control device moves the first substrate holding portion between the first holding position and the first lateral position, the control device passes through the first lowered position located below the first holding position and holds the second substrate. The drive device is controlled so as to pass through a second lowered position located below the second holding position when the portion is moved between the second holding position and the second side position. 5. The substrate processing apparatus according to 5.   The control device moves the first substrate holding part between the first lowered position and the first lateral position, and moves the second substrate holding part between the second lowered position and the second lateral position. The substrate processing apparatus according to claim 5, wherein the ultrasonic oscillation device is controlled so as to generate ultrasonic vibration in the vibrator even during the movement of the substrate. A step of immersing the substrate held by the first substrate holding unit and the second substrate holding unit of the substrate holding device holding the substrate from below in a cleaning liquid in the cleaning tank;
A step of holding the substrate immersed in the cleaning liquid in the cleaning tank in the second substrate holding unit and moving the first substrate holding unit;
A step of supplying a cleaning liquid into the cleaning tank and cleaning the substrate,
The first substrate holding portion and the second substrate holding portion each have a first holding rod and a second holding rod provided on the opposite side of the first holding rod with respect to a vertical axis passing through the center of the substrate. And
The substrate processing method, wherein the second holding bar of the first substrate holding part is disposed between the first holding bar of the second substrate holding part and the second holding bar of the second substrate holding part. After the step of moving the first substrate holder, the substrate immersed in the cleaning liquid in the cleaning tank by retained on the first substrate holding portion, further comprising a step of moving the second substrate holder The substrate processing method according to claim 8, wherein: In the step of moving the first substrate holding portion, the first substrate holding portion is moved from the first holding position for holding the substrate to the first side position located on the side of the first holding position, and thereafter Return to the first holding position,
In the step of moving the second substrate holding unit, the second substrate holding unit moves from the second holding position holding the substrate to the second side position located on the side of the second holding position, and thereafter The substrate processing method according to claim 9, wherein the substrate processing method returns to the second holding position.   11. The substrate processing method according to claim 10, wherein in the step of cleaning the substrate, ultrasonic vibration is generated in a vibrator provided at the bottom of the cleaning tank to ultrasonically clean the substrate.   The step of cleaning the substrate is performed when the first substrate holding part is located at the first side position and when the second substrate holding part is located at the second side position. The substrate processing method according to claim 11, wherein the ultrasonic vibration from is propagated to a region of the substrate held by the first substrate holding unit and the second substrate holding unit. In the step of moving the first substrate holding part, the first substrate holding part is passed through a first lowered position located below the first holding position,
The substrate processing method according to claim 12, wherein in the step of moving the second substrate holding unit, the second lowering position located below the second holding position is passed.   The step of cleaning the substrate is performed while the first substrate holding part is moved between the first lowered position and the first lateral position, and the second substrate holding part is moved to the second lowered position and the second lateral side. The substrate processing method according to claim 12, wherein the substrate processing method is also performed while being moved between positions. A recording medium on which a computer program for executing a substrate processing method is recorded,
This substrate processing method
A step of immersing the substrate held by the first substrate holding unit and the second substrate holding unit of the substrate holding device holding the substrate from below in a cleaning liquid in the cleaning tank;
A step of holding the substrate immersed in the cleaning liquid in the cleaning tank in the second substrate holding unit and moving the first substrate holding unit;
A step of supplying a cleaning liquid into the cleaning tank and cleaning the substrate,
The first substrate holding portion and the second substrate holding portion each have a first holding rod and a second holding rod provided on the opposite side of the first holding rod with respect to a vertical axis passing through the center of the substrate. And
The recording medium, wherein the second holding bar of the first substrate holding part is disposed between the first holding bar of the second substrate holding part and the second holding bar of the second substrate holding part.

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