CN119178542A - Method for determining Q-time of SACVD film - Google Patents
Method for determining Q-time of SACVD film Download PDFInfo
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- CN119178542A CN119178542A CN202411698160.8A CN202411698160A CN119178542A CN 119178542 A CN119178542 A CN 119178542A CN 202411698160 A CN202411698160 A CN 202411698160A CN 119178542 A CN119178542 A CN 119178542A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
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Abstract
The invention provides a method for determining a Q-time of a SACVD film, which comprises the steps of preparing the film by using the SACVD, performing a first stress test on the film, placing the film in an inert atmosphere environment after the film is finished, performing a first standing, performing a second stress test on the film after the film is finished, placing the film in the inert atmosphere environment, performing a second standing, performing a third stress test on the film after the film is finished, placing the film in the inert atmosphere environment, performing a third standing, performing an N stress test on the film after the film is finished, wherein N is more than or equal to 2, N is more than or equal to 3, drawing a stress change curve along with time after the N stress test, and determining the Q-time according to the curve. The method can quantify the Q-time of the SACVD film, accurately determine the value of the Q-time, guide the treatment time of the SACVD film, avoid the SACVD film from losing efficacy in the production process, improve the production efficiency and reduce the production cost.
Description
Technical Field
The invention belongs to the field of film testing, and relates to a method for determining a Q-time of a SACVD film.
Background
SA USG/BPSG as a first layer physical medium related sub-layer and inter-metal dielectric layer has wide application in integrated circuit fabrication. The original ordered network structure of the silicon dioxide is loosened due to the addition of boron and phosphorus impurities (B 2O3、P2O5), and the silicon dioxide has the flowing capability like liquid to a certain extent under the high-temperature condition. Therefore, the BPSG film has excellent hole filling capability, and can improve the planarization of the whole silicon wafer surface, thereby providing larger process range application for photoetching and subsequent processes. However, the USG/BPSG film is loose and porous, and is exposed to air for a long time, so that the film performance is greatly deviated due to rapid water absorption, and therefore, the USG/BPSG film is treated in a short time. The current industry has no clear definition of the short time (Q-time), and too long Q-time can lead to film failure, too short Q-time can lead to continuous shipment delay of the machine and increased shutdown cost.
Disclosure of Invention
In order to solve the technical problems, the application provides a method for determining the Q-time of the SACVD film, which can quantify the Q-time of the SACVD film and accurately determine the value of the Q-time, thereby guiding the processing time of the SACVD film, avoiding the failure of the SACVD film in the production process, improving the production efficiency and reducing the production cost.
In order to achieve the technical effects, the invention adopts the following technical scheme.
The invention provides a method for determining a Q-time of a SACVD (sub-atmospheric chemical vapor deposition) film, which comprises the following steps:
(1) After preparing a film by using SACVD, performing a first stress test on the film, and placing the film in an inert atmosphere environment for first standing after the film is finished;
(2) Performing a second stress test after the first standing, and placing the film in an inert atmosphere environment for the second standing after the completion of the second stress test;
(3) Performing a third stress test after the second standing, and placing the film in an inert atmosphere environment for the third standing after the third standing is completed;
And then, after the nth standing, carrying out an nth stress test, wherein N is more than or equal to 2 and N is more than or equal to 3, drawing a stress change curve along with time after the nth stress test, and determining Q-time according to the curve;
The method for determining the Q-time according to the curve comprises the step of determining the time corresponding to the stress fluctuation of +/-20 MPa to be the Q-time according to stress change data under different standing times.
As a preferred embodiment of the present invention, the film prepared using SACVD includes an SA USG (undoped silicate glass) film or an SA BPSG (borophosphosilicate glass) film.
As a preferred technical scheme of the invention, after the film preparation is completed, a first stress test is immediately performed on the film, and the time t 1 =0 corresponding to the first stress test.
As a preferred embodiment of the present invention, the inert atmosphere comprises any one or a combination of at least two of nitrogen, argon or helium.
As a preferred technical solution of the present invention, the first standing time τ 1 and the second stress test corresponding time t 2=τ1 are recorded.
As a preferable technical scheme of the invention, recording the second standing time τ 2, and the corresponding time t 3=τ1+τ2 of the third stress test.
As a preferred technical solution of the present invention, the N-th standing time τ n and the N-th stress test corresponding time t N=τ1+τ2+……+τn are recorded.
As a preferable technical scheme of the invention, the stress test methods used for the first stress test to the Nth stress test are the same.
As a preferable technical scheme of the invention, inert atmosphere environments from the first standing to the nth standing are the same.
Compared with the prior art, the invention has at least the following beneficial effects.
The invention provides a method for determining Q-time of a SACVD film, which can quantify the Q-time of the SACVD film and accurately determine the value of the Q-time, thereby guiding the processing time of the SACVD film, avoiding the failure of the SACVD film in the production process, improving the production efficiency and reducing the production cost.
Drawings
FIG. 1 is a graph showing the stress test results and the stress plotted against time for example 1 of the present invention.
FIG. 2 is a graph showing the stress test results and the stress plotted against time for example 3 of the present invention.
The present invention will be described in further detail below. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
Detailed Description
The technical scheme of the application is further described through the specific embodiments.
The invention provides a method for determining Q-time of a SACVD film, which comprises the following steps:
(1) After preparing a film by using SACVD, performing a first stress test on the film, and placing the film in an inert atmosphere environment for first standing after the film is finished;
(2) Performing a second stress test after the first standing, and placing the film in an inert atmosphere environment for the second standing after the completion of the second stress test;
(3) And (3) carrying out a third stress test after the second standing, and placing the film in an inert atmosphere environment for the third standing after the third standing.
And after the nth stress test, drawing a stress change curve with time, and determining Q-time according to the curve.
The method for determining the Q-time according to the curve comprises the step of determining the time corresponding to the stress fluctuation of +/-20 MPa to be the Q-time according to stress change data under different standing times.
N may be 2,3, 4,5, 6, 7, 8, 9, 10, etc., and N may be 3, 4,5, 6, 7, 8, 9, 10, etc., but is not limited to the above-listed values, and other non-listed values within the above-listed ranges are equally applicable.
According to the invention, the stress of the SACVD film after the preparation is tested along with the time change to obtain a stress change curve along with the time, so that the failure moment of the SACVD film is determined according to the stress change condition, and the specific time of Q-time is further determined. And in the process of each stress test interval, placing the film in an inert atmosphere environment for standing, ensuring that the film does not fail outside the test time, and improving the test accuracy.
In one embodiment of the present invention, the conditions for preparing the SA USG film or the SA BPSG film by SACVD may be adjusted according to the preparation requirements, so that the SA USG film and the SA BPSG film have a loose porous structure, which is not particularly limited herein.
In a specific embodiment of the invention, the times of standing and stress testing can be adjusted according to different testing films, but the SACVD film is ensured to fail in the process according to the stress testing result.
In one specific embodiment of the invention, after the preparation of the SACVD film is finished, the film is immediately sent to a stress testing device for testing, so that the influence of the environment on the SACVD film is avoided, and the stress testing result of the SACVD film at the moment 0 is accurately obtained.
In one embodiment of the invention, the time corresponding to the stress test result corresponds to the total standing time of the film in the inert atmosphere environment, the time required by the stress test is less than 5min and is far less than the standing time, so the stress test time is neglected.
In one embodiment of the present invention, the time of each standing in the inert atmosphere may be the same or different, and the specific time of standing may be adjusted according to the test requirements of different films, which is not particularly limited herein.
In one embodiment of the invention, the first standing time tau 1 and the second stress test corresponding time t 2=τ1 are recorded, the second standing time tau 2 and the third stress test corresponding time t 3=τ1+τ2 are recorded, and the nth standing time tau n and the nth stress test corresponding time t N=τ1+τ2+……+τn are recorded.
In one embodiment of the invention, the stress test methods used in the first to nth stress tests are the same, and the inert atmosphere environments of the first to nth static conditions are the same, so as to avoid test errors caused by differences of the test methods.
In one embodiment of the invention, a longer standing time can be adopted to determine a wider Q-time range of a test sample, and then the standing time is shortened within the wider Q-time range under the same conditions of the sample, the test condition and the standing environment so as to further accurately determine the Q-time of the sample.
In one embodiment of the present invention, when the standing time is shortened to be compared with the stress test time, resulting in a stress test time that is not negligible, the time corresponding to the stress test result can be regarded as the sum of the standing time and the test time.
To facilitate understanding of the present invention, examples are set forth below. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
Example 1
The embodiment provides a method for determining Q-time of a SACVD film, which comprises the following steps:
(1) Preparing an SA USG film by using SACVD, wherein the process temperature is 480 ℃ and the process pressure is 300 torr ℃, obtaining the SA USG film with the thickness of 600 nm, immediately performing a first stress test on the film after the preparation is finished, marking the stress test result as stress #1, and placing the film in a nitrogen cabinet for first standing;
(2) After the first standing is carried out for 30min hours, carrying out a second stress test on the film, marking the stress test result as stress #2, and placing the film in a nitrogen cabinet for carrying out the second standing;
(3) After the second standing is carried out for 30min hours, a third stress test is carried out on the film, the stress test result is recorded as stress #3, and the film is placed in a nitrogen cabinet for third standing.
And so on, after each of the third rest and the fourth rest is 30 min and each of the fifth rest and the sixth rest is 60 to min, sequentially performing a fourth stress test, a fifth stress test, a sixth stress test and a seventh stress test, wherein stress test results are sequentially recorded as stress #4, stress #5, stress #6 and stress #7, each stress test result and corresponding time are shown in table 1, and a stress change curve with time is drawn according to each stress test result and corresponding time, as shown in fig. 1.
The stress testing device used in the stress test in this embodiment is a model number FSM128.
TABLE 1
Example 2
The embodiment provides a method for determining Q-time of a SACVD film, which comprises the following steps:
(1) Preparing an SA USG film by using SACVD, wherein the process temperature is 450 ℃ and the process pressure is 280 torr ℃, obtaining the SA USG film with the thickness of 500 nm, immediately performing a first stress test on the film after the preparation is finished, marking the stress test result as stress #1, and placing the film in a nitrogen cabinet for first standing;
(2) After the first standing is carried out for 20 min hours, carrying out a second stress test on the film, marking a stress #2 as a stress test result, and placing the film in a nitrogen cabinet for carrying out the second standing;
(3) After the second standing is performed by 20 min, a third stress test is performed on the film, the stress test result is recorded as stress #3, and the film is placed in a nitrogen cabinet for the third standing.
And so on, after each of the third rest, fourth rest, fifth rest, sixth rest, seventh rest, eighth rest, ninth rest, tenth rest, eleventh rest and, twelfth rest and thirteenth rest is 20 min, sequentially performing a fourth stress test, a fifth stress test, a sixth stress test, a seventh stress test, an eighth stress test, a ninth stress test, a tenth stress test, an eleventh stress test, a twelfth stress test, a thirteenth stress test and a fourteenth stress test, and sequentially recording stress test results as stress #4, stress #5, stress #6, stress #7, stress #8, stress #9, stress #10, stress #11, stress #12 and stress #13, each stress test result and corresponding time being shown in table 2, and drawing a stress change curve with time according to each stress test result and corresponding time.
The stress testing device used in the stress test in this embodiment is a model number FSM128.
TABLE 2
Example 3
This example provides a method for determining the Q-time of SACVD films, which is the same as example 1 except that SACVD is used to prepare SA BPSG films, and the stress test results and corresponding times are shown in table 3. And drawing a stress time-varying curve according to each stress test result and the corresponding time, as shown in fig. 2.
TABLE 3 Table 3
Example 4
This example provides a method for determining the Q-time of SACVD films, which is identical to that of example 3 in terms of test sample, test conditions and standing environment, except that after the fourth standing of example 3, the standing time is shortened, that is, a-standing is sequentially performed after the fourth standing, the standing time is 15 min, the test result is denoted as stress #a, b-standing, the standing time is 15 min, the test result is denoted as stress #b, c-standing, the standing time is 15 min, the test result is denoted as stress #c, d-standing is 15 min, the test result is denoted as stress #d, and the sixth standing of example 3 is performed to further refine Q-time, and each stress test result and corresponding time are shown in table 4.
TABLE 4 Table 4
The applicant states that the detailed structural features of the present invention are described by the above embodiments, but the present invention is not limited to the above detailed structural features, i.e. it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be apparent to those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope of the present invention and the scope of the disclosure.
The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the scope of the technical concept of the present invention, and all the simple modifications belong to the protection scope of the present invention.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Moreover, any combination of the various embodiments of the invention can be made without departing from the spirit of the invention, which should also be considered as disclosed herein.
Claims (9)
1. A method of determining a SACVD film Q-time, the method comprising:
(1) After preparing a film by using SACVD, performing a first stress test on the film, and after the film is finished, placing the film in an inert atmosphere environment for first standing;
(2) Performing a second stress test after the first standing, and placing the film in an inert atmosphere environment for the second standing after the completion of the second stress test;
(3) Performing a third stress test after the second standing, and placing the film in an inert atmosphere environment for performing the third standing after the completion of the third stress test;
after the nth stress test, drawing a stress change curve with time, and determining Q-time according to the curve;
The method for determining the Q-time according to the curve comprises the step of determining the time corresponding to the stress fluctuation of +/-20 MPa to be the Q-time according to stress change data under different standing times.
2. The method of claim 1, wherein the film prepared using SACVD comprises a SA USG film or a SA BPSG film.
3. The method of claim 1, wherein the film is subjected to a first stress test immediately after the film is prepared, the first stress test corresponding to a time t 1 = 0.
4. The method of claim 1, wherein the inert atmosphere comprises any one or a combination of at least two of nitrogen, argon, or helium.
5. The method of claim 1, wherein the first resting time τ 1 is recorded and the second stress test corresponds to time t 2=τ1.
6. The method of claim 5, wherein the second resting time τ 2 is recorded and the third stress test corresponds to time t 3=τ1+τ2.
7. The method of claim 6, wherein the nth resting time τ n is recorded and the nth stress test corresponds to time t N=τ1+τ2+……+τn.
8. The method of claim 1, wherein the stress test methods used for the first to nth stress tests are the same.
9. The method of claim 1, wherein the inert atmosphere environment is the same from the first rest to the nth rest.
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