CN119148370A - MEMS micro-displacement platform and position detection method thereof - Google Patents
MEMS micro-displacement platform and position detection method thereof Download PDFInfo
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- CN119148370A CN119148370A CN202411290342.1A CN202411290342A CN119148370A CN 119148370 A CN119148370 A CN 119148370A CN 202411290342 A CN202411290342 A CN 202411290342A CN 119148370 A CN119148370 A CN 119148370A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0866—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by thermal means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a MEMS micro-displacement platform and a position detection method thereof, which belong to the field of MEMS device detection, wherein a position sensing element is mainly placed near an MEMS micro-mirror, the sensing element is integrated into the MEMS micro-mirror, when the mirror surface of the MEMS micro-mirror deflects to be close to the sensing element, the sensing element can generate corresponding electric signals, and after the sensing element is placed, the signals are transmitted to a drive control circuit through TSV or TGV and other processes, so that the position of the mirror surface is obtained in real time. The invention combines the device detection with the TSV or TGV technology, greatly improves the integration level of the existing detection device, can realize mass production with low cost in batches, and has higher market prospect.
Description
Technical Field
The invention relates to the field of MEMS device detection, in particular to a MEMS micro-displacement platform and a position detection method thereof.
Background
Microelectromechanical systems (MEMS, micro-Electro-MECHANICAL SYSTEM), also known as microelectromechanical systems, microsystems, micromachines, etc., have internal structures that are typically on the order of micrometers or even nanometers, and are a self-contained intelligent system. Microelectromechanical systems have evolved on the basis of microelectronics (semiconductor fabrication technology) and incorporate high-tech electromechanical devices fabricated by lithography, etching, thin film, LIGA (MEMS processing technology based on X-ray lithography), silicon micromachining, non-silicon micromachining, precision machining, etc. In order to improve the stability of the MEMS micro-displacement platform in the working process, a position detection functional unit is generally integrated on the MEMS micro-displacement platform (on or near a platform supporting structure) to obtain information such as the position and the rotation angle of the platform motion, and then real-time feedback control of the micro-motion platform motion is realized through a driving circuit. Among them, for MEMS devices with mirrors such as static electricity, electrothermal, electromagnetic, and piezoelectric, the position of the mirror is important to know because the mirror deflects and reflects light to perform scanning operation.
The position detection of the MEMS micro-displacement platform is a puzzled problem, and the position detection method of the MEMS micro-displacement platform mainly comprises the following steps:
1. The piezoresistive measuring method is adopted, namely, a pressure-sensitive element is attached to a driving structure or is independently connected with a mirror surface, and is generally applied to structures such as optical scanning, and the like, but the piezoresistive measuring method has better precision at present, but does not have quantitative analysis at present, and has the defects of poor temperature characteristic, complex process and the like. In addition, the piezoresistive measuring method is only suitable for MEMS micro-displacement platforms with driving arms made of monocrystalline silicon, and cannot be suitable for different types of micro-mirror structures.
2. The principle of the detection is that when the micro-mirror module is in use, a beam of light is irradiated onto the surface of the micro-mirror, and the light reflected by the micro-mirror during movement is directly irradiated onto the photosensitive device, or a part of light is reflected to a position sensitive detector (position sensitive detector, PSD) during light-transmitting window glass. The method has the advantages of higher optical judgment precision and wider application range, and the method has the defects of high price of the PSD of the position sensitive detector, difficult integration and increased packaging difficulty and packaging and measuring cost.
3. The scheme of calculating the displacement position through algorithm includes that for example, the voltage supplied to the chip drive is sinusoidal, the torsion track of the mirror surface displacement position is sinusoidal, then 2 high-speed photodiodes are arranged in the scanning light path, the torsion phase and amplitude of the MEMS micro mirror are obtained according to the position relation of the 2 photodiodes and the time of the scanning light beam passing through the 2 photodiodes, and the torsion angle of the MEMS micro mirror at any moment is estimated according to the angle/time track of the sinusoidal. The algorithm requires that the quality of the chip mirror surface is completely symmetrical left and right and is not interfered by external connection, and has a certain probability of calculation errors, so that the accuracy of the test cannot be ensured.
Disclosure of Invention
The invention aims to overcome the technical problems in the prior art, provides a MEMS micro-displacement platform and a position detection method thereof, and mainly aims at judging the position of the MEMS micro-displacement platform with a mirror surface such as static electricity, electric heat, electromagnetic force, piezoelectric force and the like, so that low-cost, easy-integration and high-precision batch use is realized.
The aim of the invention is realized by the following technical scheme:
In a first aspect, a MEMS micro-displacement platform is provided, in which an inductive component for detecting a change in a mirror position is integrated, and the inductive component is connected with a drive control circuit through a conductive structure.
In some embodiments, the MEMS micro-displacement platform is an electrostatic micromirror, an electrothermal micromirror, an electromagnetic micromirror, or a piezoelectric micromirror.
In some embodiments, the sensing element is a capacitor, an inductor, a position sensor, or a photodiode.
In some embodiments, the via structure is a through-silicon via structure or a glass via structure.
In some embodiments, the conductive structure is conductive longitudinally.
In some embodiments, the via structure is stacked in multiple layers.
In some embodiments, the induction component carrier is further included, and the induction component carrier is used for supporting and placing the induction component.
In some embodiments, the inductive component carrier silicon wafer and/or glass sheet.
In some embodiments, the conductive structure is connected to the driving control circuit through an external solder ball.
In a second aspect, a method for detecting a position of a MEMS micro-displacement platform is provided, where the method is used for the MEMS micro-displacement platform and includes:
the position change of the mirror surface is detected through the sensing component to generate a corresponding electric signal, the electric signal is transmitted to the drive control circuit through the conducting structure, and the position information of the mirror surface is read in real time through the drive control circuit.
It should be further noted that the technical features corresponding to the above options may be combined with each other or replaced to form a new technical scheme without collision.
Compared with the prior art, the invention has the beneficial effects that:
According to the invention, the sensing components are integrated near the MEMS micro-mirror, when the mirror surface of the MEMS micro-mirror deflects to be close to the sensing components, the sensing components generate corresponding electric signals, and then the signals are transmitted to the drive control circuit through TSV or TGV and other conducting processes, so that the position of the mirror surface is obtained in real time, the position of the displacement platform can be accurately judged, and real-time feedback is performed. And the structure design is simple, and is suitable for different types of micro-mirror structures. Meanwhile, the invention combines the micro-displacement platform position detection with the TSV or TGV technology, greatly improves the integration level of the existing detection device, can realize mass production with low cost in batches, and has higher market prospect.
Drawings
Fig. 1 is a schematic diagram of a TSV typical structure according to an embodiment of the present invention;
FIG. 2 is a typical structure of a TGV according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a conventional MEMS electrostatic micromirror structure according to an embodiment of the present invention;
FIG. 4 illustrates a MEMS electrostatic micromirror platform structure after integrating sensing components in accordance with an embodiment of the present invention;
FIG. 5 shows a MEMS electrothermal micromirror platform structure after integrating sensing components in accordance with an embodiment of the present invention;
FIG. 6 illustrates a MEMS electromagnetic micromirror platform structure after integrating sensing components in accordance with an embodiment of the present invention;
FIG. 7 illustrates a MEMS piezoelectric micromirror platform structure after integrating sensing components in accordance with an embodiment of the present invention.
In the figure, the anode of a 1-MEMS mirror, the cathode of a 2-MEMS mirror, a 3-mirror, 4-comb teeth, 5-torsion beams, 6-silicon wafers (glass sheets), 7-induction components, wiring of an 8-TGV (TSV) process, 9-solder balls, 10-driving arms and 11-integrated coils.
Detailed Description
The following description of the embodiments of the present application will be made apparent and fully understood from the accompanying drawings, in which some, but not all embodiments of the application are shown. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that the above solutions in the prior art have all the drawbacks that the inventors have obtained after they have practiced and studied carefully, and therefore, the discovery process of the above problems and the solutions that the embodiments of the present application in the following description address the above problems should be considered as contributions of the inventors to the application in the inventive process, and should not be construed as being what is known to those skilled in the art.
Before describing embodiments of the present application, an introduction is made to TSV and TGV processes, specifically as follows:
TSVs, the acronym "Through-SiliconVia," is a vertical electrical interconnect Through a silicon substrate (Wafer or chip). The simple description is through silicon vias. Is an advanced packaging technology that allows for vertical formation of conductive vias on a silicon chip or wafer to enable electrical interconnection between different layers or chips. The TSVs are mainly filled with conductive substances such as copper to complete vertical electrical interconnection of the silicon through holes, signal delay is reduced, capacitance and inductance are reduced, low-power consumption and high-speed communication of the chip are realized, bandwidth is increased, and miniaturization requirements of device integration are met. TSV is a key process in wafer level multi-layer stacking technology that effectively improves system integration and performance. As shown in fig. 1, which is a typical structure of a TSV, through holes are formed in a silicon substrate, and a filling metal such as copper is plated to realize electrical interconnection in a vertical direction inside the silicon wafer. Then, tin ball implanting and other operations are carried out on the bottom of the silicon wafer, so that the conduction between the top electrode and the bottom tin ball is realized.
TGV, the acronym "Through-Glass Via," is a vertical electrical interconnect Through a Glass substrate. A simple description is glass through-hole. The glass through hole technology is manufactured by the technologies of sand blasting, photosensitive glass method, focusing power generation method, plasma etching method, laser ablation method, electrochemical discharge machining method, laser induced etching method and the like. A typical structure of TGV is shown in fig. 2, which is a through hole in a glass substrate, which may be high quality borosilicate glass or quartz glass. And then, the electric interconnection in the vertical direction is realized by electroplating metal filling, so that the distance of signal transmission is reduced, the direction is not limited to the vertical direction, and wiring arrangement in different depths and directions can be realized.
Fig. 3 shows a MEMS electrostatic micromirror platform structure, specifically, reference numeral 1 in the figure is the positive electrode of the MEMS mirror (specifically, the positive electrode of the comb teeth driver in the structure), reference numeral 2 is the negative electrode of the MEMS mirror (specifically, the negative electrode of the comb teeth driver in the structure), a voltage with a certain waveform is applied to the MEMS comb teeth driver, the comb teeth 4 vertically form a capacitance effect, and when the electric field of the two rows of comb teeth structure changes, the electric field between the comb teeth changes to generate an acting force so as to deflect the mirror surface 3. The electrostatic force generated by the electric field drives the comb teeth 4 to vertically move, and the vertical moving force drives the mirror surface 3 at the micro-displacement platform to twist through the torsion beam 5, so that the mirror surface 3 deflects at a certain angle.
Further, as shown in fig. 4, the MEMS electrostatic micromirror is bonded to a silicon wafer 6 (glass sheet), after the mirror surface 3 at the position of the micro-displacement platform deflects, the sensing component 7 located below the mirror surface 3 senses the position change of the mirror surface 3, generates a corresponding electrical signal, and transmits the signal to the external solder ball (Pad) 9 through the wiring 8 of the TGV (TSV) process, so that the communication between the sensing component 7 and the external drive control circuit board is realized, and the position of the mirror surface 3 is obtained in real time. The silicon wafer 6 is used as an induction component carrier, and in other examples, the induction component carrier can also be an electrical interconnection structure of a silicon wafer and a glass sheet through a process, and then is conducted to a PCB board or a ceramic substrate.
In some examples, the via structure may be a via structure on silicon, or a wiring structure on the back side, or by bonding with a silicon wafer (glass sheet), combining device inspection with a TSV (TGV) process. The conduction via may be a longitudinal via or a multi-layer stack.
Fig. 5 shows a MEMS electrothermal micromirror platform structure, where the driving force of the electrothermal driving micromirror is derived from the difference between the thermal conductivity and thermodynamic properties of different materials, and the driving arm generates a driving force by thermal expansion after being electrified and heated. The micromirror uses a dual-layer driving structure, such as bimorph-driven micromirror of Al/SiO 2 material, and the electrothermal bimorph driver is a dual-layer driving structure with different Coefficients of Thermal Expansion (CTE), and the thermal expansion difference generated by electric heating can deform the structure to drive the scanning mirror to deflect.
As shown in fig. 5, reference numeral 1 in the drawing is the positive electrode of the MEMS mirror, reference numeral 2 is the negative electrode of the MEMS mirror, a voltage with a certain waveform is applied to the MEMS mirror, after the driving arm 10 is electrified and heated, thermal expansion is generated to generate driving force to drive the mirror surface 3 of the mirror to deflect, the sensing component 7 positioned below the mirror surface 3 of the mirror senses the position change of the mirror surface 3 to generate a corresponding electric signal, and the signal is transmitted to the external solder ball (Pad) 9 through wiring of a TGV (TSV) process, so that the communication between the sensing component 7 and an external circuit board is realized.
Fig. 6 shows a MEMS electromagnetic micromirror platform structure, in which the lorentz force is generated by current through a magnetic field, the torsion of the micromirror is controlled by controlling the magnitude and direction of the current, and the electromagnetic micromirror is often driven by an externally applied magnetic field, which is typically generated by permalloy or an energized coil. The electromagnetic drive scanning mirror is driven by lorentz force, and the larger the size, the larger the driving force is, since the lorentz force is proportional to the size. The electromagnetic driving is current driving, the driving voltage is low, and a boosting chip is not needed. To build in a strong magnetic field or a strong magnet, a coil is integrated on the MEMS electromagnetic micro mirror, the coil is placed in the magnetic field, and the magnetic field can interact with the coil which is supplied with current to generate Lorentz force so as to drive the MEMS mirror to deflect.
As shown in fig. 6, reference numeral 1 in the figure is the positive electrode of the MEMS mirror, reference numeral 2 is the negative electrode of the MEMS mirror, a certain amplitude of current is applied to the MEMS mirror, the integrated coil 11 generates lorentz force through interaction with a magnetic field after being electrified, the mirror surface 3 of the micro mirror is driven to deflect, the sensing component 7 positioned beside the mirror surface 3 of the micro mirror senses the position change of the mirror surface 3 to generate a corresponding electric signal, and the signal is transmitted to an external circuit board through a TSV structure at the bottom to realize communication connection.
Fig. 7 shows a MEMS piezoelectric micromirror platform structure, in which a MEMS piezoelectric micromirror driver converts an electrical signal into a mechanical force by using the forward and reverse piezoelectric effect of a piezoelectric material, so as to drive the micromirror to deflect. The driver is usually composed of a PZT piezoelectric film, and by applying an additional electric field to both ends of the PZT piezoelectric film, positive and negative charges in the PZT piezoelectric film are caused to relatively displace to form an electric polarization phenomenon, and the length of the PZT piezoelectric film is changed under the influence of the electric polarization phenomenon, so that the force is generated to drive the micromirror to deflect. Four torsion beams containing PZT materials in a multi-layer structure are supported, so that two-dimensional deflection can be realized.
As shown in fig. 7, reference numeral 1 in the figure is the positive pole of the MEMS mirror, reference numeral 2 is the negative pole of the MEMS mirror, an additional electric field is applied to the two ends of the MEMS micro mirror, the positive and negative charges inside the piezoelectric film are displaced relatively, the displacement generates force to drive the micro mirror 3 to deflect, the sensing element 7 below the micro mirror 3 senses the position change of the mirror 3, a corresponding electric signal is generated, the signal is transmitted to an external solder ball (Pad) 9 through a TGV process structure at the bottom, and the communication between the sensing element 7 and an external circuit board is realized through a gold wire bonding mode.
Compared with the prior art, the invention has the advantages of high manufacturing integration level, mass production realized by the process, high precision and accuracy, real-time feedback of the mirror surface position, lower cost and higher efficiency when facing the conditions of cost pressure, time urgency, high precision requirement and the like of devices, mature TSV (TGV) technology in the current market, and long-term test experience shows that the scheme really has higher reliability and wider market.
It should be noted that the above solutions can be combined by themselves, not only in the above categories, but also any deformation structure formed based on the inventive concept and corresponding detection method are within the scope of the present application.
The foregoing detailed description of the invention is provided for illustration, and it is not to be construed that the detailed description of the invention is limited to only those illustration, but that several simple deductions and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and are to be considered as falling within the scope of the invention.
Claims (10)
1. The MEMS micro-displacement platform is characterized in that an induction component for detecting the position change of a mirror surface is integrated in the MEMS micro-displacement platform, and the induction component is connected with a drive control circuit through a conducting structure.
2. The MEMS micro-displacement platform of claim 1, wherein the MEMS micro-displacement platform is an electrostatic micromirror, an electrothermal micromirror, an electromagnetic micromirror, or a piezoelectric micromirror.
3. The MEMS micro-displacement platform of claim 1, wherein the inductive component is a capacitor, an inductor, a position sensor, or a photodiode.
4. The MEMS micro-displacement platform of claim 1, wherein the via structure is a through-silicon via structure or a glass via structure.
5. The MEMS micro-displacement platform of claim 1, wherein the conductive structure is conductive longitudinally.
6. The MEMS micro-displacement platform of claim 1, wherein the via structure is stacked in multiple layers.
7. The MEMS micro-displacement platform of claim 1, further comprising an inductive component carrier for supporting the inductive component.
8. The MEMS micro-displacement platform of claim 7, wherein the sensing element comprises a silicon wafer and/or a glass sheet.
9. The MEMS micro-displacement platform of claim 1, wherein the conductive structure is coupled to the drive control circuit via an external solder ball.
10. A method for detecting the position of a MEMS micro-displacement platform, for a MEMS micro-displacement platform according to any one of claims 1 to 9, comprising:
the position change of the mirror surface is detected through the sensing component to generate a corresponding electric signal, the electric signal is transmitted to the drive control circuit through the conducting structure, and the position information of the mirror surface is read in real time through the drive control circuit.
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| CN202411290342.1A CN119148370A (en) | 2024-09-14 | 2024-09-14 | MEMS micro-displacement platform and position detection method thereof |
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| CN202411290342.1A CN119148370A (en) | 2024-09-14 | 2024-09-14 | MEMS micro-displacement platform and position detection method thereof |
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| US20020135329A1 (en) * | 2001-03-22 | 2002-09-26 | Neufeld Richard David | Method for linearization of an actuator via force gradient modification |
| CN101028702A (en) * | 2007-01-12 | 2007-09-05 | 东华大学 | Microfeeding system for precisive grinding |
| CN104160240A (en) * | 2012-02-15 | 2014-11-19 | 普莱姆森斯有限公司 | Scanning depth engine |
| CN113031249A (en) * | 2019-12-09 | 2021-06-25 | 觉芯电子(无锡)有限公司 | Micro-mirror control device based on photoelectric feedback |
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2024
- 2024-09-14 CN CN202411290342.1A patent/CN119148370A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020135329A1 (en) * | 2001-03-22 | 2002-09-26 | Neufeld Richard David | Method for linearization of an actuator via force gradient modification |
| CN101028702A (en) * | 2007-01-12 | 2007-09-05 | 东华大学 | Microfeeding system for precisive grinding |
| CN104160240A (en) * | 2012-02-15 | 2014-11-19 | 普莱姆森斯有限公司 | Scanning depth engine |
| CN113031249A (en) * | 2019-12-09 | 2021-06-25 | 觉芯电子(无锡)有限公司 | Micro-mirror control device based on photoelectric feedback |
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