CN119125820A - Negative resistance effect control method based on non-uniform distribution of space charge - Google Patents
Negative resistance effect control method based on non-uniform distribution of space charge Download PDFInfo
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- CN119125820A CN119125820A CN202411159927.XA CN202411159927A CN119125820A CN 119125820 A CN119125820 A CN 119125820A CN 202411159927 A CN202411159927 A CN 202411159927A CN 119125820 A CN119125820 A CN 119125820A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a negative resistance effect regulation and control method based on space charge non-uniform distribution. And preparing a plurality of metal electrodes with different pitches on the same surface of the semiconductor material, wherein two electrodes are respectively positioned on two sides of the surface of the material, the positive electrode and the negative electrode of a current source are respectively connected on the electrodes on the two sides, the positive electrode of a voltmeter is connected to the metal electrode connected with the positive electrode of the current source, and the negative electrode of the voltmeter is connected to the rest electrode. And changing the position of an electrode connected with the negative stage of the voltmeter based on the non-uniform distribution of space charges, so that the concentration of effective carriers in a detected area of the voltmeter is changed, and the detected negative resistance effect is regulated and controlled. The regulating and controlling method is continuously adjustable, has simple process and is convenient to be applied to a novel multi-performance negative resistance element integrated circuit.
Description
Technical Field
The invention belongs to the field of performance regulation of semiconductor electronic devices, and particularly relates to a negative resistance effect regulation method based on space charge non-uniform distribution.
Background
The negative resistance effect generally refers to a nonlinear electric transport effect in which the measured current decreases while the applied current increases or during the applied voltage increases. The device based on the negative resistance effect can be applied to the fields of circuit amplifiers, memories, logic circuits, oscillators, pulse generators and the like, and has very important application prospects.
Currently, negative resistance effects have been found in a variety of materials and structures, such as Si, gaAs, graphene, silicon-based p-n, and the like heterojunction structures. However, the regulation and control of the negative resistance effect often needs to adopt a complex structural design process or specific conditions (such as illumination or external magnetic field, etc.), and it is difficult to realize the negative resistance effect with various different intensities in the same device, which is inconvenient for integration application, so that the wider application of the device is limited to a certain extent.
Disclosure of Invention
The invention aims to solve the technical problems that a negative resistance effect regulation and control method based on space charge non-uniform distribution is provided, so that the problem that complex structural design process or specific conditions (such as illumination or external magnetic field) are often required to realize the negative resistance effect, and multiple negative resistance effects with different intensities are difficult to realize in the same device, and the integration application is inconvenient is solved.
In order to solve the technical problems, the technical scheme adopted by the invention is that the negative resistance effect regulation and control method based on the non-uniform distribution of space charges comprises the following steps:
1) Preparing a plurality of metal electrodes with different pitches on the same surface of a semiconductor material, wherein two electrodes are respectively positioned on two sides of the surface of the material;
2) The positive electrode and the negative electrode of the current source are respectively connected to the two metal electrodes, the positive electrode of the voltmeter is connected to the metal electrode connected with the positive electrode of the current source, and the negative stage of the voltmeter is sequentially connected to one of the other metal electrodes;
3) When the current source continuously increases the current, a strong local electric field is induced in the semiconductor, so that local collision ionization occurs, a minority carrier equivalent injection effect is generated, and therefore, the negative resistance effect in the semiconductor material is measured through the voltmeter, space charges in the semiconductor are in a non-uniform distribution state, and the effective carrier concentration of a detected area of the voltmeter is changed by changing the position of a metal electrode connected with the negative stage of the voltmeter, so that the regulation and control of the detected negative resistance effect are realized.
In a preferred embodiment, the semiconductor substrate is one of a low-doped non-magnetic semiconductor material Ge, si, gaAs or GaSb.
In a preferred embodiment, the metal electrode material is one of nonmagnetic metal Au, ag, cu, in and Al.
In a preferred embodiment, ohmic contact is formed between the metal electrode material and the semiconductor material.
The negative resistance effect regulation and control method based on the non-uniform distribution of space charges has the following beneficial effects by adopting the structure:
(1) The method is based on the negative resistance effect caused by local impact ionization, adjusts the effective carrier concentration of the voltage detection area by changing the electrode spacing connected with the voltmeter, realizes the regulation and control of the detected negative resistance effect, has the advantage of continuously adjustable negative resistance effect through the continuous change of the electrode spacing, and is convenient to be applied to a multi-performance negative resistance element integrated circuit;
(2) The method provided by the invention has the advantages of simple process, mature device performance test method and convenience for popularization and application.
Drawings
The invention is further illustrated by the following examples in conjunction with the accompanying drawings:
fig. 1 is a schematic measurement diagram of a negative resistance effect control method based on space charge non-uniform distribution in an embodiment of the invention.
FIG. 2 is a graph showing the results of V-I curves over a smaller current range measured using the electrodes No. 1 and No. 5 in the examples of the present invention.
FIG. 3 is a graph showing the results of V-I curves over a larger current range measured at different electrode spacing in the examples of the present invention.
FIG. 4 is a graph showing the relationship between the maximum value of |dV/dI| corresponding to the negative resistance conduction interval of the V-I curve and the change of the electrode spacing according to the embodiment of the invention.
FIG. 5 is a graph of V H -I after eliminating the effect of magneto-resistive signals in the magnetic field conditions of 300K and 1T according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of the non-uniform distribution of space charges in a semiconductor according to an embodiment of the invention.
Detailed Description
In one embodiment of the present invention, as shown in fig. 1, the semiconductor material is a non-magnetic semiconductor Ge with low doping Ga, denoted p-Ge: ga, and the material of the metal electrode is Au. The specific preparation method of the nonmagnetic semiconductor and the metal electrode, the electrode spacing and other information are as follows:
The non-magnetic p-Ge/Ga semiconductor material is selected, the room temperature resistivity of the material is 10-30 Ω & cm, and the thickness is 0.5 mm. Square flaky p-Ge: ga semiconductor material with the size of 8.00 multiplied by 8.00 mm 2 is cut by an alloy lettering pen, and the carrier concentration and the mobility of the selected semiconductor material under the condition of no minority carrier injection are respectively about 2.61 multiplied by 10 14cm-3 and 2.05 multiplied by 10 3cm2·V-1·s-1, which are measured by a Van der Waals method under the environment of 300K. A rectangular strip sample having an average length of about 3.10 mm and an average width of about 1.26: 1.26 mm was cut with an alloy lettering pen. And sequentially ultrasonically cleaning the cut strip sample with acetone and absolute ethyl alcohol for 10min to ensure that the surface of the matrix material is clean, and finally taking out the cleaned semiconductor strip sample and drying the surface with argon. And 5 metal Au electrodes with different pitches are prepared on the same surface of a semiconductor strip sample by adopting a high-vacuum magnetron sputtering coating combined with a mask method, one metal electrode is positioned on the side edge of the surface of the material, and then a wire is led out through silver paste so as to be connected with a current source and a voltmeter required by a test. For convenience of description, the prepared metal electrodes are numbered 1 to 5 in sequence. Wherein the electrodes No. 1 and No. 5 are respectively positioned on two sides of the surface of the material. The electrode spacing for numbers 1 and X (x=2, 3, 4, or 5) is labeled L 1X, then L 12、L13、L14 and L 15 are about 0.4 mm, 1.1 mm, 1.8 mm, and 2.5 mm, respectively.
As shown in fig. 1, in the embodiment of the present invention, the positive and negative electrodes of the current source are respectively connected to Au electrodes No. 1 and No. 5, and the positive electrode of the voltmeter is connected to Au electrode No. 1, and the negative stage of the voltmeter is sequentially connected to Au electrode No. X (x=2, 3,4, or 5). The device is in a dark environment and the measurement of other electrotransport properties of the device, except for the subsequent hall effect measurement, is in an environment without an external magnetic field. Taking the negative stage of the voltmeter as an example when it is connected to the Au electrode No. 5, the voltage (V) -current (I) curve in a smaller current range is measured, and the result is shown in fig. 2. As can be seen from fig. 2, the resulting V-I curve is a straight line passing through the origin, indicating that ohmic contact properties are formed between the prepared Au electrode and the selected non-magnetic p-Ge: ga semiconductor.
As shown in fig. 3, which shows the V-I curve results when the negative stage of the voltmeter is connected to the Au electrode of X (x=2, 3, 4 or 5), it is known from fig. 3 that a negative resistance effect can be observed under different electrode spacing conditions, because a strong local electric field is induced inside the non-magnetic p-Ge: ga semiconductor when the current is continuously increased by the current source, resulting in local impact ionization, resulting in minority carrier equivalent injection effect. According to the calculation formula r=l/S [ (nqμ n+pqμp) ] of the semiconductor resistance R, μ n、μp is electron mobility and hole mobility in the semiconductor, q is the charge amount, L is the electrode spacing of No. 1 and No. 5, and S is the cross-sectional area of the semiconductor perpendicular to the current direction. Where q, L and S values are unchanged and μ n、μp can also be regarded as constant at constant temperature. After the minority carrier equivalent injection effect occurs, the electron concentration n gradually increases, and the change in the hole concentration p is approximately ignored, so that R gradually starts to decrease, exhibiting a negative resistance effect. I.e. after the measured voltage reaches a certain maximum value, the current continues to increase, and the negative resistance effect in the semiconductor material can be measured by the voltmeter. As can be seen from fig. 4, the electrode spacing of the maximum value of |dv/di| increases significantly, which means that continuous regulation of the negative resistance effect can be achieved by continuous change of the electrode spacing.
The same high vacuum coating process is adopted, two Au electrodes are prepared on the side of the semiconductor surface parallel to the current direction passing through the No. 1 and No. 5 Au electrodes, the two Au electrodes are used for collecting Hall voltage (V H) signals, a 1T magnetic field is applied and is perpendicular to the current direction and the electrode connecting line direction for collecting VH signals, antisymmetric calculation processing is carried out on V H -I curve data obtained through measuring the positive 1T magnetic field direction and the negative 1T magnetic field direction, and possible magnetic resistance signal interference in Hall effect measuring signals is eliminated, and the obtained result is shown in FIG. 5. As can be seen from hall effect measurements, V H is positive over a small current range, indicating that the selected semiconductor material is indeed p-type doped, and V H gradually decreases as the current increases, as the current increases from first to second, and as the current increases above about 20 mA, V H changes from positive to negative and remains in the negative range as the current continues to increase, indicating that significant minority carrier injection effects do occur under larger current conditions. As can be seen by comparing fig. 3 and fig. 5, the magnitude of the current corresponding to the occurrence of the negative resistance effect is almost equal to the magnitude of the current corresponding to the transition of V H from a positive value to a negative value, indicating that the negative resistance effect is indeed mainly derived from the minority carrier equivalent injection effect generated when the local impact ionization occurs.
In the case of minority carrier injection, as shown in fig. 6, space charges in the semiconductor are unevenly distributed, and by changing the positions of Au metal electrodes connected to the negative stage of the voltmeter, that is, the negative stage of the voltmeter is sequentially connected to the Au electrodes No. 2 to No. 5, the effective carrier concentrations of the detected regions of the positive and negative electrodes of the voltmeter are different, so that the detected negative resistance effect is regulated and controlled. For example, the effective carrier concentration between the electrodes 1 and 2 is significantly lower than the effective carrier concentration between the electrodes 1 and 5, so that the negative resistance effect detected when the voltmeter is connected to the electrodes 1 and 2 is weaker than the negative resistance effect detected when the electrodes 1 and 5 are connected (as shown in fig. 3 and 4).
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features described in the embodiments of the present invention may be combined with each other as long as they do not collide with each other.
Claims (4)
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1238557A (en) * | 1968-08-02 | 1971-07-07 | ||
| US20040061512A1 (en) * | 2002-09-26 | 2004-04-01 | Murata Manufacturing Co., Ltd. | Testing method for electronic component and testing device |
| US20040110349A1 (en) * | 2002-12-09 | 2004-06-10 | Tsu-Jae King | Methods of testing/stressing a charge trapping device |
| US20040239346A1 (en) * | 2003-04-04 | 2004-12-02 | Iyer Natarajan Mahadeva | Method of determining current-voltage characteristics of a device |
| US20090027038A1 (en) * | 2002-10-23 | 2009-01-29 | Elsa Garmire | Systems And Methods That Detect Changes In Incident Optical Radiation |
| CN112331769A (en) * | 2020-10-26 | 2021-02-05 | 华中科技大学 | Coexistence of Negative Resistance and Non-saturating Magnetoresistive Effects Based on Local Impact Ionization |
| CN116896979A (en) * | 2023-07-13 | 2023-10-17 | 三峡大学 | Device with room temperature negative magnetoresistance based on surface charge accumulation effect |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1238557A (en) * | 1968-08-02 | 1971-07-07 | ||
| US20040061512A1 (en) * | 2002-09-26 | 2004-04-01 | Murata Manufacturing Co., Ltd. | Testing method for electronic component and testing device |
| US20090027038A1 (en) * | 2002-10-23 | 2009-01-29 | Elsa Garmire | Systems And Methods That Detect Changes In Incident Optical Radiation |
| US20040110349A1 (en) * | 2002-12-09 | 2004-06-10 | Tsu-Jae King | Methods of testing/stressing a charge trapping device |
| US20040239346A1 (en) * | 2003-04-04 | 2004-12-02 | Iyer Natarajan Mahadeva | Method of determining current-voltage characteristics of a device |
| CN112331769A (en) * | 2020-10-26 | 2021-02-05 | 华中科技大学 | Coexistence of Negative Resistance and Non-saturating Magnetoresistive Effects Based on Local Impact Ionization |
| CN116896979A (en) * | 2023-07-13 | 2023-10-17 | 三峡大学 | Device with room temperature negative magnetoresistance based on surface charge accumulation effect |
Non-Patent Citations (3)
| Title |
|---|
| HE XIONG: "Evolution of Electrical Transport Property in Ge-Based Negative Differential Resistance Devices under Pulsed High Magnetic Field", PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, vol. 16, no. 8, 31 August 2022 (2022-08-31) * |
| 于涵 等: "锗基半导体器件的界面磁阻效应和体磁阻效应", 材料导报, vol. 35, no. 2, 31 December 2021 (2021-12-31), pages 02069 - 02073 * |
| 刘淑艳 等: "半导体部件负阻的观测与应用", 半导体技术, no. 2, 30 April 1996 (1996-04-30), pages 61 - 63 * |
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| CN119125820B (en) | 2025-05-16 |
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