CN119121157A - A high mobility co-doped diamond and preparation method thereof - Google Patents
A high mobility co-doped diamond and preparation method thereof Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims abstract description 163
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 163
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 110
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 110
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 108
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004047 hole gas Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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Abstract
The invention relates to a high mobility co-doped diamond and a preparation method thereof, comprising the steps of providing an unintentionally doped diamond; preparing a hydrogen terminal structure on the surface of the diamond which is not intentionally doped to form a hydrogen terminal diamond, preparing an intrinsic film of an element to be doped on the surface of the hydrogen terminal structure of the hydrogen terminal diamond, etching the intrinsic film at a preset temperature to enable the element to be doped of the intrinsic film to be thermally diffused into the hydrogen terminal structure and the diamond which is not intentionally doped to form p-type doping, and obtaining the co-doped diamond layer. The preparation method can effectively repair the damage of magnetron sputtering to the crystal lattice on the diamond surface, reduce the surface roughness, improve the interface quality of the co-doped diamond, and greatly improve the carrier mobility of the hydrogen-terminated diamond under the combined action of p-type doping elements and a hydrogen termination structure which is both p-type conductive, thereby improving the performance of the co-doped diamond layer and further being used for preparing high-performance diamond microwave power devices.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a high-mobility co-doped diamond and a preparation method thereof.
Background
The ultra-wide band gap semiconductor diamond has the advantages of large band gap, high breakdown field intensity, high carrier mobility, high heat conductivity, irradiation resistance and the like, and has great potential in power electronic device application when the hydrogen terminal diamond field effect transistor which uses the surface hydrogen terminal to induce two-dimensional hole gas as a conductive channel becomes the current mainstream device selection at the present time under the condition that the high-efficiency body doping of the diamond has not yet achieved a great breakthrough.
Previous studies have found that one key weakness of hydrogen terminated diamond two-dimensional hole gas (2 DHG) conductance is that mobility is too low. In particular, the hydrogen terminated diamond 2DHG conductance carrier concentration is sufficiently high, but the mobility is typically below 200cm 2/Vs, with corresponding sheet resistances typically of 10kΩ/sq or higher. For the same reason, diamond FETs have limited transconductance, maximum current and power gain due to low channel carrier mobility, and still have difficulty in achieving sufficient output power density even with full current swing. It can be said that the low hole mobility of hydrogen terminated diamond has become a key bottleneck limiting the improvement of the performance of microwave power devices.
In recent years, in the background that single doping performance of single crystal diamond materials is difficult to further improve, novel diamond materials such as silicon termination and boron doping have attracted a great deal of attention. Although the silicon terminal diamond material is helpful for improving the stability of the conductivity of the diamond surface, the silicon terminal diamond material has the problems of complex preparation process, high process precision requirement and the like. For single element doped diamond such as boron doping, the doping difficulty is high, and the contact resistance between the diamond and metal is large, so that the performance of the device is difficult to improve.
Therefore, how to improve the carrier mobility of the diamond material, and further prepare a high-performance diamond microwave power device becomes a current urgent problem to be solved.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-mobility co-doped diamond and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
the embodiment of the invention provides a preparation method of a high-mobility co-doped diamond, which comprises the following steps:
Providing an unintentionally doped diamond;
Preparing a hydrogen terminal structure on the surface of the diamond which is not doped intentionally to form a hydrogen terminal diamond;
preparing an intrinsic thin film of an element to be doped on the surface of a hydrogen terminal structure of the hydrogen terminal diamond;
Etching the intrinsic film at a preset temperature to thermally diffuse elements to be doped of the intrinsic film into the hydrogen terminal structure and the unintentionally doped diamond and form p-type doping, so as to obtain a co-doped diamond layer.
In one embodiment of the present invention, preparing an intrinsic thin film of an element to be doped on a hydrogen termination structure surface of the hydrogen termination diamond, comprising:
and preparing an intrinsic thin film of an element to be doped on the surface of the hydrogen terminal structure by utilizing a magnetron sputtering technology.
In one embodiment of the invention, the element to be doped comprises boron.
In one embodiment of the present invention, the intrinsic thin film has a thickness of 100-500nm.
In one embodiment of the present invention, etching the intrinsic thin film at a preset temperature, so that an element to be doped of the intrinsic thin film is thermally diffused into the hydrogen termination structure and the unintentionally doped diamond to obtain a co-doped diamond layer, including:
and etching the intrinsic thin film at a preset temperature of 800-1200 ℃ by utilizing high-temperature hydrogen plasma in a microwave plasma chemical vapor deposition system, so that elements to be doped of the intrinsic thin film are thermally diffused into the hydrogen terminal structure and the undoped diamond to form p-type doping, and a co-doped diamond layer is obtained.
In one embodiment of the invention, the doping element is 1-3 μm deep into the undoped diamond along the hydrogen termination structure to the direction of the undoped diamond.
In one embodiment of the present invention, before the preparation of the intrinsic thin film of the element to be doped on the hydrogen termination structure surface of the hydrogen termination diamond, the method further comprises the steps of:
And testing the surface density, the sheet resistance and the carrier mobility of the hydrogen terminal diamond, and when judging that the surface density meets the preset surface density, the sheet resistance meets the preset sheet resistance and the carrier mobility meets the preset carrier mobility, performing the step of preparing the intrinsic film of the element to be doped on the surface of the hydrogen terminal structure of the hydrogen terminal diamond.
In one embodiment of the invention, the predetermined areal density is 5X 10 11-1×1013cm-2, the predetermined sheet resistance is 5-10ohm/sq, and the predetermined carrier mobility is 50-100cm 2/(V.s).
Another embodiment of the present invention provides a high mobility co-doped diamond prepared by the method of preparation described in the previous embodiments.
Compared with the prior art, the invention has the beneficial effects that:
According to the preparation method, the intrinsic thin film of the element to be doped is prepared on the surface of the hydrogen terminal structure, and the intrinsic thin film is etched, so that the element to be doped is thermally diffused into the hydrogen terminal structure and is not intentionally doped in the diamond to form p-type doping, thereby effectively repairing damage of magnetron sputtering to crystal lattices on the surface of the diamond, reducing surface roughness, improving interface quality of co-doped diamond, and greatly improving carrier mobility of the hydrogen terminal diamond under the combined action of the p-type doping element and the hydrogen terminal structure which is p-type conductive, so that performance of the co-doped diamond layer is improved, and the preparation method can be used for preparing high-performance diamond microwave power devices.
Drawings
Fig. 1 is a schematic flow chart of a preparation method of a high mobility co-doped diamond according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of another method for preparing high mobility co-doped diamond according to an embodiment of the present invention;
fig. 3a to 3e are schematic process diagrams of a method for preparing a high mobility co-doped diamond according to an embodiment of the present invention;
fig. 4 is a graph of a contact hall test result of co-doped diamond provided by an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, fig. 1 is a schematic flow chart of a preparation method of a high mobility co-doped diamond according to an embodiment of the present invention. The preparation method of the high-mobility co-doped diamond comprises the following steps:
s1, providing the diamond which is not doped intentionally.
Specifically, an unintentional doped diamond epitaxial by chemical vapor deposition (Chemical Vapor Deposition, CVD) is selected as a substrate, cutting and polishing pretreatment is carried out on the diamond, and then ultrasonic cleaning is carried out on the treated diamond in a strong acid mixed solution (H 2SO4:HNO3), acetone, absolute ethyl alcohol and deionized water at 200 ℃ in sequence, so that a clean diamond substrate is obtained. The thickness of diamond is 500-1000 μm.
S2, preparing a hydrogen terminal structure on the surface of the diamond which is not intentionally doped to form the hydrogen terminal diamond.
Specifically, a layer of hydrogen termination structure is prepared on the cleaned substrate by a Microwave Plasma Chemical Vapor Deposition (MPCVD) technology, and the thickness of the hydrogen termination is less than 5nm to form the hydrogen termination diamond.
S3, preparing an intrinsic film of an element to be doped on the surface of the hydrogen terminal structure of the hydrogen terminal diamond.
Specifically, an intrinsic thin film of an element to be doped is prepared on the surface of a hydrogen terminal structure by utilizing a magnetron sputtering technology. Wherein the element to be doped is a p-type doping element including but not limited to boron. The boron element is used as a common element for p-type doping of the diamond, and is combined with a diamond hydrogen terminal with p-type conductivity, so that the preparation difficulty is low, the success rate is high, and the preparation cost is high.
Specifically, the thickness of the intrinsic thin film is 100-500nm. By way of example, a layer of 100nm high-purity intrinsic boron film is deposited on the surface of the hydrogen termination structure of the hydrogen termination diamond by using a magnetron sputtering technology, and a diamond sample with the boron intrinsic film and the hydrogen termination structure on the surface is obtained.
And S4, etching the intrinsic film at a preset temperature to thermally diffuse elements to be doped of the intrinsic film into the hydrogen terminal structure and the diamond which is not intentionally doped, and forming p-type doping, so as to obtain the co-doped diamond layer.
Specifically, in a Microwave Plasma Chemical Vapor Deposition (MPCVD) system, under the condition that the hydrogen flow rate is 300-600sccm, etching the intrinsic film at a preset temperature of 800-1200 ℃ by utilizing high-temperature hydrogen plasma, so that the element to be doped of the intrinsic film is thermally diffused into a hydrogen terminal structure and the diamond which is not intentionally doped to form p-type doping, thereby obtaining the co-doped diamond layer. The diamond sample with the boron film and the hydrogen terminal on the surface is placed in an MPCVD device again, hydrogen is introduced, glow is started under the condition that the hydrogen flow is 600sccm, the temperature is raised to 900 ℃ for surface etching, and the boron-hydrogen co-doped diamond sheet with boron thermal diffusion doping is obtained.
In this embodiment, the intrinsic thin film is etched at a high temperature by using a high temperature hydrogen plasma, and the element to be doped enters the hydrogen termination structure and the diamond from one side of the hydrogen termination structure by thermal diffusion under a high temperature condition, and meanwhile, the hydrogen plasma carries the element to be doped into the hydrogen termination structure and the diamond, so that p-type doping is formed in the hydrogen termination structure and the diamond. Further, the intrinsic film is etched completely by high temperature hydrogen plasma etching, and the hydrogen terminal surface is exposed.
Specifically, the depth of the element to be doped into the diamond is in positive correlation with the thickness of the intrinsic film, and the larger the thickness of the intrinsic film is, the larger the depth of the element to be doped into the diamond is. Specifically, along the hydrogen termination structure to the direction of the unintentionally doped diamond, the depth of the doping element into the unintentionally doped diamond is 1-3 μm.
According to the preparation method, the intrinsic thin film of the element to be doped is prepared on the surface of the hydrogen terminal structure, and the intrinsic thin film is etched, so that the element to be doped is thermally diffused into the hydrogen terminal structure and is not intentionally doped in the diamond to form p-type doping, damage of magnetron sputtering to crystal lattices on the surface of the diamond is effectively repaired, the surface roughness is reduced, the interface quality of the co-doped diamond is improved, meanwhile, under the combined action of the p-type doping element and the hydrogen terminal structure which is p-type conductive, the carrier mobility of the hydrogen terminal diamond is greatly improved, the performance of the co-doped diamond layer is improved, and the method can be used for preparing high-performance diamond microwave power devices.
According to the embodiment, the intrinsic film of the element to be doped is sputtered by magnetron sputtering, the advantage of the hydrogen terminal surface of the diamond is combined, the co-doping of the element to be doped and hydrogen of the diamond is realized by a thermal diffusion method, and the co-doping is realized based on common MPCVD equipment, so that the process difficulty is effectively reduced.
Example two
On the basis of the first embodiment, please refer to fig. 2, fig. 2 is a schematic flow chart of another preparation method of co-doped diamond with high mobility according to the embodiment of the present invention, the preparation method includes the steps of:
S1, providing an unintentionally doped diamond;
S2, preparing a hydrogen terminal structure on the surface of the diamond which is not intentionally doped to form a hydrogen terminal diamond;
S3, testing the surface density, the sheet resistance and the carrier mobility of the hydrogen terminal diamond, and performing step S3 when judging that the surface density meets the preset surface density, the sheet resistance meets the preset sheet resistance and the carrier mobility meets the preset carrier mobility.
Specifically, the surface density, the sheet resistance and the carrier mobility are tested by a contact Hall test method, the screening surface density is within a preset surface density range, the sheet resistance is within a preset sheet resistance range, and the carrier mobility is within a preset carrier mobility range, so that the hydrogen-terminated diamond performs the next step of intrinsic film growth.
Specifically, the preset areal density is 5e 11-1e13cm-2, the preset sheet resistance is 5-10ohm/sq, and the preset carrier mobility is 50-100cm 2/(V.s).
According to the embodiment, through screening of the surface density, the sheet resistance and the carrier mobility, the hydrogen-terminated diamond with good carrier mobility can be obtained, and then the co-doped diamond with high mobility is prepared in the subsequent steps.
S4, preparing an intrinsic film of an element to be doped on the surface of a hydrogen terminal structure of the hydrogen terminal diamond;
And S5, etching the intrinsic film at a preset temperature to thermally diffuse elements to be doped of the intrinsic film into the hydrogen terminal structure and the diamond which is not intentionally doped, and forming p-type doping to obtain the co-doped diamond layer.
The specific implementation and the beneficial effects of steps S1, S2, S4, and S5 are shown in embodiment one, and the description of this embodiment is omitted.
Example III
On the basis of the second embodiment, please refer to fig. 3 a-3 e, and fig. 3 a-3 e are schematic process diagrams of a preparation method of a high mobility co-doped diamond according to an embodiment of the present invention.
S1, providing the diamond which is not doped intentionally, please refer to FIG. 3a.
Specifically, diamond which is not doped intentionally is selected as a substrate, cutting and polishing pretreatment is carried out on the diamond, and then the treated diamond is sequentially subjected to ultrasonic cleaning in a strong acid mixed solution (H 2SO4:HNO3) at 200 ℃, acetone, absolute ethyl alcohol and deionized water, so that a clean diamond substrate is obtained.
S2, preparing a hydrogen termination structure C-H on the surface of the diamond which is not intentionally doped to form a hydrogen termination diamond, see FIG. 3b.
Specifically, a hydrogen termination structure is formed on the cleaned substrate by Microwave Plasma Chemical Vapor Deposition (MPCVD) techniques.
S3, testing the surface density, sheet resistance and carrier mobility of the hydrogen terminal diamond, and screening the hydrogen terminal diamond meeting the conditions.
Specifically, the prepared hydrogen terminal diamond is screened by a contact Hall test method, the control surface density is within 5 multiplied by 10 11-1×1013cm-2, the sheet resistance is within 5-10ohm/sq, and the carrier mobility is within 50-100cm 2/(V.s).
S4, preparing an intrinsic film of an element to be doped on the surface of the hydrogen terminal structure of the hydrogen terminal diamond, and referring to FIG. 3c.
Specifically, a layer of 100nm high-purity intrinsic boron film B is deposited on the surface of the screened hydrogen terminal diamond by a magnetron sputtering process, and a diamond sample with the surface of the boron film and the hydrogen terminal is obtained.
And S5, etching the intrinsic film at a preset temperature to thermally diffuse elements to be doped of the intrinsic film into the hydrogen terminal structure and the diamond which is not intentionally doped, and forming p-type doping to obtain a co-doped diamond layer, see FIG. 3d.
Specifically, the diamond sample with the boron film and the hydrogen terminal on the surface is placed in an MPCVD device again, hydrogen is introduced, glow is started under the condition that the hydrogen flow is 600sccm, the temperature is raised to 1000 ℃ for surface etching, and the boron-hydrogen co-doped diamond sheet with boron thermal diffusion doping is obtained.
S6, preparing an ohmic contact electrode on the surface of the co-doped diamond layer, and referring to FIG. 3e.
Specifically, a Ti/Au layer with the thickness of 20/100nm is deposited on the surface of the doped co-doped diamond layer, and the deposited boron-silicon co-doped diamond is annealed in a rapid thermal annealing device for 5 minutes, so that the preparation of an ohmic electrode is completed, wherein the annealing temperature is 800 ℃. Or depositing a layer of gold with the thickness of 10nm on the surface of the doped co-doped diamond layer to serve as an electrode, and completing the preparation of the ohmic electrode. Further, ohmic contact electrodes are located at both ends of the surface of the co-doped diamond layer.
The co-doped diamond layer of the embodiment can reduce the resistance of the ohmic contact electrode due to higher interface quality.
The contact hall test is performed on the co-doped diamond after the ohmic contact electrode is prepared by using a four-probe method, the test structure is shown in fig. 4, fig. 4 is a graph of the contact hall test result of the co-doped diamond provided by the embodiment of the invention, wherein Rs represents a square resistance, RHs represents a hall coefficient, and Ns represents a carrier area density. As can be seen from fig. 4, the carrier mobility of the co-doped diamond is 733cm 2/(v·s), which shows a higher value, and proves that the carrier mobility of the hydrogen-terminated diamond is greatly improved under the combined action of the p-type doping element and the hydrogen-terminated structure which is p-type conductive.
Example IV
On the basis of the embodiment, the embodiment provides the high-mobility co-doped diamond, which comprises the un-intentionally doped diamond and a hydrogen terminal structure, wherein the hydrogen terminal structure is positioned on the surface of the un-intentionally doped diamond, p-type doping elements are formed in the hydrogen terminal structure and the part, close to the hydrogen terminal structure, of the un-intentionally doped diamond, and the p-type doping elements and the hydrogen terminal structure form co-doping.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (9)
1. The preparation method of the co-doped diamond with high mobility is characterized by comprising the following steps:
Providing an unintentionally doped diamond;
Preparing a hydrogen terminal structure on the surface of the diamond which is not doped intentionally to form a hydrogen terminal diamond;
preparing an intrinsic thin film of an element to be doped on the surface of a hydrogen terminal structure of the hydrogen terminal diamond;
Etching the intrinsic film at a preset temperature to thermally diffuse elements to be doped of the intrinsic film into the hydrogen terminal structure and the unintentionally doped diamond and form p-type doping, so as to obtain a co-doped diamond layer.
2. The method of producing a high mobility co-doped diamond according to claim 1, wherein the step of producing an intrinsic thin film of an element to be doped on the hydrogen termination structure surface of the hydrogen termination diamond comprises:
and preparing an intrinsic thin film of an element to be doped on the surface of the hydrogen terminal structure by utilizing a magnetron sputtering technology.
3. The method of preparing high mobility co-doped diamond of claim 1, wherein the element to be doped comprises boron.
4. The method of preparing high mobility co-doped diamond according to claim 1, wherein the intrinsic thin film has a thickness of 100-500nm.
5. The method of claim 1, wherein etching the intrinsic thin film at a predetermined temperature causes the element to be doped of the intrinsic thin film to thermally diffuse into the hydrogen termination structure and into the undoped diamond to obtain a co-doped diamond layer, comprising:
and etching the intrinsic thin film at a preset temperature of 800-1200 ℃ by utilizing high-temperature hydrogen plasma in a microwave plasma chemical vapor deposition system, so that elements to be doped of the intrinsic thin film are thermally diffused into the hydrogen terminal structure and the undoped diamond to form p-type doping, and a co-doped diamond layer is obtained.
6. The method of producing high mobility co-doped diamond according to claim 1, wherein the doping element is 1-3 μm deep into the undoped diamond along the hydrogen termination structure to the direction of the undoped diamond.
7. The method of producing a high mobility co-doped diamond according to claim 1, further comprising the step of, before the step of producing the intrinsic thin film of the element to be doped on the hydrogen termination structure surface of the hydrogen terminated diamond:
And testing the surface density, the sheet resistance and the carrier mobility of the hydrogen terminal diamond, and when judging that the surface density meets the preset surface density, the sheet resistance meets the preset sheet resistance and the carrier mobility meets the preset carrier mobility, performing the step of preparing the intrinsic film of the element to be doped on the surface of the hydrogen terminal structure of the hydrogen terminal diamond.
8. The method of claim 7, wherein the predetermined areal density is 5x 10 11-1×1013cm-2, the predetermined sheet resistance is 5-10ohm/sq, and the predetermined carrier mobility is 50-100cm 2/(v·s).
9. A high mobility co-doped diamond prepared by the method of any one of claims 1 to 8.
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