CN119108284A - A microwave transceiver module assembly process method based on ceramic substrate stacking assembly - Google Patents
A microwave transceiver module assembly process method based on ceramic substrate stacking assembly Download PDFInfo
- Publication number
- CN119108284A CN119108284A CN202411206370.0A CN202411206370A CN119108284A CN 119108284 A CN119108284 A CN 119108284A CN 202411206370 A CN202411206370 A CN 202411206370A CN 119108284 A CN119108284 A CN 119108284A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- transceiver module
- solder
- solder ball
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
本发明公开了一种基于陶瓷基板堆叠组装的微波收发模块装配工艺方法，包括：焊接壳体；在底部金属热沉上焊接第一电子元件，并通过陶瓷基板焊接负载芯片；将第二电子元件装配到第二层陶瓷基板的上表面；在第二层陶瓷基板背面植入高熔点锡球阵列，使用丝网印刷在高熔点锡球阵列上涂覆焊膏，得到组装后的第二层陶瓷基板；将组装后的第二层陶瓷基板倒扣装配到所述壳体的底部陶瓷基板对应的焊盘上，通过再流焊接实现互连；类似的方法组装第三层陶瓷基板后，和第二层陶瓷基板上对应的焊盘通过再流焊接实现互连；最后封装金属外壳盖板。本发明给出了一种在深体中完成多层陶瓷基板组装的新方案，能够提升生成效率，降低组装成本。
The present invention discloses a microwave transceiver module assembly process method based on ceramic substrate stacking assembly, including: welding a shell; welding a first electronic component on a bottom metal heat sink, and welding a load chip through a ceramic substrate; assembling a second electronic component on the upper surface of a second ceramic substrate; implanting a high melting point solder ball array on the back of the second ceramic substrate, and using screen printing to apply solder paste on the high melting point solder ball array to obtain an assembled second ceramic substrate; assembling the assembled second ceramic substrate upside down on the pad corresponding to the bottom ceramic substrate of the shell, and interconnecting through reflow welding; assembling the third ceramic substrate in a similar manner, and interconnecting with the corresponding pad on the second ceramic substrate through reflow welding; and finally encapsulating a metal shell cover. The present invention provides a new solution for completing the assembly of multi-layer ceramic substrates in a deep body, which can improve the generation efficiency and reduce the assembly cost.
Description
Technical Field
The invention relates to a microwave transceiver module assembly process method, in particular to a microwave transceiver module assembly process method based on ceramic substrate stacking assembly.
Background
The microwave transceiver module is widely applied to communication systems, is an important component of wireless transceiver systems, and is mainly assembled by a transmitting part, a receiving part, a power supply control, a shell and the like. The electronic components in the current transceiver module, including power amplifier chip, radio frequency chip, power chip, etc., are assembled in a plane in a housing, then fence isolation is performed for different parts to prevent internal electromagnetic interference, and finally airtight packaging is performed, thereby realizing the whole process flow.
However, as devices and modules continue to develop toward miniaturization and high-density integration, the overall size of the planar assembly mode is larger, and subsequent requirements are difficult to meet, and the device module design based on the stacking of the multilayer ceramic substrates can be interconnected in a vertical direction, so that the planar size of the devices is reduced, however, the difficulty of the overall assembly process is also increased sharply, and the requirements of the stacking of the multilayer ceramic substrates and high-density packaging are difficult to meet by the traditional micro-assembly process method. In addition, as packaging density increases, internal heat dissipation requirements increase, and requirements for high heat dissipation assembly processes are higher, and due to requirements for electromagnetic isolation of the microwave module, the whole device needs to be assembled and hermetically packaged in a cavity. Therefore, how to realize the stacking of the multi-layered substrates and the multi-temperature gradient soldering of the components in the cavity is a current difficult problem.
Disclosure of Invention
Aiming at the problems, the invention provides a microwave transceiver module assembling process method based on ceramic substrate stacking assembly, which solves the problem that the micro-assembly process technology of the current miniaturized and high-density integrated microwave transceiver module is difficult to assemble in a cavity.
The technical scheme adopted by the invention is a microwave transceiver module assembling process method based on ceramic substrate stacking assembly, which comprises the following steps:
and S1, welding a bottom metal heat sink, a bottom ceramic substrate, external pins and a metal surrounding frame by adopting high-temperature brazing filler metal to prepare a shell with the bottom and the side surrounding frames being metal, wherein the high-temperature brazing filler metal is mainly silver-copper eutectic brazing filler metal, and the welding temperature is 850-950 ℃. In order to ensure high thermal conductivity, the bottom metal heat sink material is molybdenum-copper alloy or diamond-copper composite material with high thermal conductivity and low expansion coefficient.
And S2, assembling a microwave power amplifier chip, a microstrip line, a ceramic matching circuit chip and the like with higher heat dissipation requirements on a bottom metal heat sink by adopting high-temperature-resistant high-heat-conductivity solder to form a microwave emission part as a bottom first layer, wherein the solder is gold tin or nano silver soldering paste for realizing higher heat dissipation, and simultaneously assembling a load chip with higher heat dissipation requirements on a second layer receiving part with the bottom metal heat sink by adopting high-temperature-resistant high-heat-conductivity solder through a ceramic substrate, wherein the ceramic substrate is high-heat-conductivity aluminum nitride ceramic, is made into an L shape, and reduces the occupied area of the ceramic at the bottom. The sintering temperatures of the gold-tin eutectic solder and the nano-silver soldering paste are 300-320 ℃ and 200-250 ℃ respectively, the soldering coating of the corresponding area is nickel/gold, wherein the thickness of the nickel layer is 3-8.9 mu m, and the thickness of the gold is 1.3-4 mu m.
And S3, assembling a second electronic element on the upper surface of the second-layer ceramic substrate to obtain a receiving part of the transceiver module, wherein the second electronic element comprises a radio frequency chip, implanting high-melting-point tin balls into corresponding positions of bonding pads on the back surface of the second-layer ceramic substrate to form a high-melting-point tin ball array, and coating soldering paste on the high-melting-point tin ball array by using screen printing to obtain the assembled second-layer ceramic substrate. The solder paste is coated on the high-melting point tin ball array by screen printing, and is realized by adopting a steel screen printing mode, and reflow soldering is carried out by adopting a vacuum reflow oven. The high-melting point tin ball array is assembled by using Sn96.5Ag3Cu0.5 solder balls, the reflow temperature is 220-250 ℃, the corresponding solder plating layer is nickel/gold, wherein the thickness of the nickel layer is 3-8.9 mu m, and the thickness of the gold is 0.13-0.45 mu m.
And S4, assembling the assembled second-layer ceramic substrate on a bonding pad corresponding to the bottom ceramic substrate of the shell prepared in the step S1, and then realizing interconnection between the substrates through reflow soldering, wherein the temperature of the reflow soldering is 220-250 ℃.
And S5, assembling a third electronic element on the upper surface of the third-layer ceramic substrate to obtain a power control part of the transceiver module, wherein the third electronic element comprises a power control chip and a resistor capacitor, implanting solder balls with lower melting points than those in the step 3 into corresponding positions of bonding pads on the back surface of the third-layer ceramic substrate to form a low-melting-point solder ball array, and coating soldering paste on the low-melting-point solder ball array by using screen printing to obtain the assembled third-layer ceramic substrate. The low-melting point tin ball array is assembled by adopting Sn63Pb37 solder balls, the reflow temperature is 190-210 ℃, the corresponding solder plating layer is nickel/gold, wherein the thickness of the nickel layer is 3-8.9 mu m, and the thickness of the gold is 0.13-0.45 mu m.
And S6, assembling the assembled third-layer ceramic substrate on the upper surface of the shell middle-layer ceramic substrate, and then realizing interconnection of the third-layer substrate and the second-layer substrate through reflow soldering.
And S7, adopting parallel seal welding to package a metal shell cover plate to form airtight package, and obtaining the high-density stacked microwave transceiver module.
The interconnection of the two layers of substrates is realized by printing soldering paste on tin balls on a tin ball array of an upper layer of substrate through a special steel mesh, then reversely buckling to a lower substrate and then entering a reflow oven for welding. The solder paste is coated on the high-melting point tin ball array by screen printing, and the solder paste is printed on the tin balls by adopting a special steel mesh, and as the surface of the tin balls is arc-shaped, the opening parameters of the steel mesh are required to be specially required in order to ensure the uniformity of the thickness of the printed solder paste and the subsequent flip-chip welding quality, wherein the opening diameter D=0.6-0.8D (D is the diameter of a solder ball) of the steel mesh printing, and the thickness H=50μm+0.2-0.4d of the steel mesh. The solder paste was applied to the low melting point solder ball array using screen printing with the same steel mesh parameters. The temperature of the reflow soldering is 220-250 ℃.
In all the steps, the electronic elements such as chips, circuits and the like are interconnected with the ceramic substrate through wire bonding.
Compared with the traditional microwave transceiver module assembly process, the three-layer substrate vertical packaging interconnection is realized through the two tin ball processes with different melting points, and the high-power heat dissipation chip with high heat dissipation requirement is sintered to the bottom heat sink by adopting gold tin or nano silver solder, so that the chip with low heat dissipation requirement is placed on the upper substrate, the packaging integration level is improved while heat dissipation is realized, and the volume of the module is reduced. The invention adopts the mode that the steel mesh is used for printing solder paste on the solder balls of the solder ball array of the upper substrate and then is assembled with the lower substrate for reflow soldering, and compared with the traditional mode that the solder paste is checked by the solder plate in the cavity, the invention has simpler operation and higher efficiency. Compared with the prior mode of layer-by-layer assembly in the cavity, the invention adopts the method that the chip is firstly attached and bonded on the ceramic substrate and then assembled in the cavity of the shell, thereby reducing the use of solder gradient, lowering the assembly difficulty and improving the reliability of the assembled device. The invention provides a microwave transceiver module assembly process method based on three-layer ceramic substrate stacking assembly, and provides a new scheme for completing multi-layer ceramic substrate assembly in a deep body, which can improve the generation efficiency and reduce the assembly cost. The process method has the characteristics of high integration level, simple operation, high reliability and batch production.
Drawings
FIG. 1 is a schematic diagram of a microwave transceiver module in an embodiment;
FIG. 2 is a schematic diagram of step 1 of a method for assembling a microwave transceiver module based on ceramic substrate stacking assembly according to the present invention;
FIG. 3 is a schematic diagram of step2 of the method for assembling a microwave transceiver module based on ceramic substrate stacking assembly according to the present invention;
FIG. 4 is a schematic diagram of step3 of the method for assembling a microwave transceiver module based on ceramic substrate stacking assembly according to the present invention;
FIG. 5 is a schematic diagram of step 4 of the method for assembling a microwave transceiver module based on ceramic substrate stacking assembly according to the present invention;
FIG. 6 is a schematic diagram of step 5 of the method for assembling a microwave transceiver module based on ceramic substrate stacking assembly according to the present invention;
FIG. 7 is a schematic diagram of step 6 of the method for assembling a microwave transceiver module based on ceramic substrate stacking assembly according to the present invention;
Fig. 8 is a schematic diagram of step 7 of the assembling process of the microwave transceiver module based on ceramic substrate stacking assembly according to the present invention.
Wherein ① is a bottom metal heat sink, a ② bottom ceramic substrate, ③ external pins, ④ metal surrounding frames, ⑤ power chips and peripheral matching circuits, ⑥ load chips, ⑦ ceramic heat sinks, ⑧ radio frequency chips and part of passive devices, ⑨ second-layer ceramic substrate and ⑩ high-melting-point tin balls; a power supply control chip and a resistor capacitor; A third layer of ceramic substrate; A low melting point solder ball; And a cover plate.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings and examples.
The invention relates to a process method for assembling a microwave transceiver module based on ceramic substrate stacking assembly, as shown in fig. 1, which is a schematic diagram of a package structure of a transceiver module with three layers of ceramic substrates stacked in this embodiment, and mainly comprises the following steps:
Referring to fig. 2, a metal heat sink ①, a bottom ceramic substrate ②, external pins ③ and a metal surrounding frame ④ are welded in a vacuum welding furnace by adopting silver copper (AgCu) eutectic high-temperature solder, and the welding temperature is 850-950 ℃ to obtain a deep cavity shell.
Referring to fig. 3, sintering the bottom power chip and the peripheral matching circuit ⑤ on the bottom metal heat sink of the deep cavity shell obtained in the first step by adopting high Wen Jinxi (Au 80Sn 20) or high-heat-conductivity nano silver solder, interconnecting with the bottom ceramic substrate ② by Wire Bonding (Wire Bonding), and simultaneously assembling the load chip ⑥ with a second layer receiving part with higher heat dissipation requirement with the bottom metal heat sink by adopting Au80Sn20 high-temperature solder or nano silver solder through the ceramic heat sink ⑦. The sintering temperature of the gold-tin solder is 300-320 ℃, and the sintering temperature of the nano silver solder is 200-250 ℃.
Step three, referring to fig. 4, the radio frequency chip and part of the passive devices ⑧ are soldered on the second layer ceramic substrate ⑨ by using low temperature solder (sn96.5ag3cu0.5) or conductive adhesive, and interconnected by wire bonding. Then, a steel mesh is used to coat solder paste (Sn96.5Ag3Cu0.5) on the back BGA bonding pad of the ceramic substrate ⑨, then a ball-implanting steel mesh is used to implant high-melting-point tin balls ⑩ (Sn96.5AgCu0.5 or Pb90Sn10 solder balls) on the corresponding bonding pad positions, reflow soldering is carried out, and finally, the solder paste is printed on the reflowed solder balls through the steel mesh for standby. The reflow temperature of the Sn96.5Ag3Cu0.5 solder is 220-250 ℃. Wherein the diameter of the adopted tin ball is 500 mu m, the diameter of the opening of the steel mesh is 400 mu m, and the thickness of the steel mesh is 150 mu m.
And step four, referring to fig. 5, the second layer of substrate obtained in the step three is assembled into the cavity obtained in the step two, then the cavity is subjected to reflow soldering in a reflow furnace, the reflow soldering temperature is 220-250 ℃, and then the load chip and the substrate ⑨ are interconnected through metal wire bonding.
Fifth, referring to FIG. 6, the power supply control chip, resistor and capacitor are made of conductive adhesiveAssembled to the third layer ceramic substrateAnd interconnected by wire bonding. Then the steel mesh is adopted on the ceramic substrateIs coated with soldering paste (Sn 63Pb 37) on the back BGA bonding pad, and then a ball-mounting steel mesh is adopted to implant low-melting-point tin balls at the positions corresponding to the bonding pad(Sn 63Pb 37), and carrying out reflow soldering, and finally printing soldering paste on the reflowed solder balls through the specially-manufactured steel mesh in the third step for standby. The reflow temperature of the Sn63Pb37 solder is 190-210 ℃.
And step six, referring to fig. 7, assembling the third layer of substrate obtained in the step five into the cavity obtained in the step four, and then, entering a reflow furnace for reflow soldering, wherein the reflow soldering temperature is 190-210 ℃.
Step seven, referring to FIG. 8, the shell and the metal cover plate obtained in the step six are combinedAnd carrying out parallel sealing welding through a parallel sealing machine to obtain the hermetically packaged microwave transceiver module.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411206370.0A CN119108284A (en) | 2024-08-30 | 2024-08-30 | A microwave transceiver module assembly process method based on ceramic substrate stacking assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411206370.0A CN119108284A (en) | 2024-08-30 | 2024-08-30 | A microwave transceiver module assembly process method based on ceramic substrate stacking assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119108284A true CN119108284A (en) | 2024-12-10 |
Family
ID=93714907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411206370.0A Pending CN119108284A (en) | 2024-08-30 | 2024-08-30 | A microwave transceiver module assembly process method based on ceramic substrate stacking assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119108284A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119297093A (en) * | 2024-12-11 | 2025-01-10 | 西安欣创电子技术有限公司 | High-reliability and high-integration microwave digital integrated module packaging method and module |
| CN119517825A (en) * | 2025-01-22 | 2025-02-25 | 中国电子科技集团公司第十研究所 | An integrated stacking packaging method for millimeter wave SOP components |
-
2024
- 2024-08-30 CN CN202411206370.0A patent/CN119108284A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119297093A (en) * | 2024-12-11 | 2025-01-10 | 西安欣创电子技术有限公司 | High-reliability and high-integration microwave digital integrated module packaging method and module |
| CN119517825A (en) * | 2025-01-22 | 2025-02-25 | 中国电子科技集团公司第十研究所 | An integrated stacking packaging method for millimeter wave SOP components |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113809032B (en) | A power module, power supply circuit and chip | |
| US8962394B2 (en) | Semiconductor device and method of manufacturing the same | |
| US6262477B1 (en) | Ball grid array electronic package | |
| KR101489325B1 (en) | Flip-chip type stacked power module and method of manufacturing the power module | |
| US7411281B2 (en) | Integrated circuit device package having both wire bond and flip-chip interconnections and method of making the same | |
| CN119108284A (en) | A microwave transceiver module assembly process method based on ceramic substrate stacking assembly | |
| TWI245381B (en) | Electrical package and process thereof | |
| JP2013042135A (en) | Power overlay structure with leadframe connections | |
| US7554039B2 (en) | Electronic device | |
| JP5740903B2 (en) | Electronic device, semiconductor device, thermal interposer, and manufacturing method thereof | |
| JP4194408B2 (en) | Substrate with reinforcing material, wiring substrate comprising semiconductor element, reinforcing material and substrate | |
| JP3813540B2 (en) | Semiconductor device manufacturing method, semiconductor device, and semiconductor device unit | |
| CN114050130A (en) | CSOP type ceramic shell, amplifying filter and manufacturing method | |
| CN111698824B (en) | Integrated interconnection structure of self-airtight packaging functional module and implementation method | |
| CN112466864A (en) | Three-dimensional stacked microwave assembly based on high-temperature co-fired ceramic | |
| CN114242661A (en) | A low-warpage double-layer stacked ceramic system and packaging method | |
| JP3450477B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN213583746U (en) | Millimeter wave chip flip-chip BGA package structure based on high temperature co-fired ceramics | |
| CN113745176A (en) | Semiconductor device with a plurality of transistors | |
| JPH10256428A (en) | Semiconductor package | |
| TWI234865B (en) | Electrically insulating heat sink and semiconductor package with the heat sink | |
| US20240006267A1 (en) | Hermetic Package Cooling Using Silver Tubes with Getter Absorption Material | |
| JPH10256413A (en) | Semiconductor package | |
| JP3965867B2 (en) | Semiconductor package | |
| JP2000195996A (en) | Electronic circuit module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |