JP2000195996A - Electronic circuit module - Google Patents
Electronic circuit moduleInfo
- Publication number
- JP2000195996A JP2000195996A JP36697498A JP36697498A JP2000195996A JP 2000195996 A JP2000195996 A JP 2000195996A JP 36697498 A JP36697498 A JP 36697498A JP 36697498 A JP36697498 A JP 36697498A JP 2000195996 A JP2000195996 A JP 2000195996A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- lid
- electronic circuit
- wiring board
- circuit module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】
【課題】 従来の電子回路モジュールの多層配線基板で
は放熱部材にサーマルビアホールを用いていたため、内
部の回路配線の配置に制約があった。
【解決手段】 多層配線基板１の上面に、半導体素子搭
載部２ａおよび蓋体当接部２ｂを有する熱伝導層２が形
成され、半導体素子３が半導体素子搭載部２ａに搭載さ
れるとともに、熱伝導材料から成り、内側に突出部５ａ
を有する蓋体５が突出部５ａを蓋体当接部２ｂに当接さ
せて取着されている電子回路モジュールである。半導体
素子３の発熱を熱伝導層２と突出部５ａを介して蓋体５
に効率よく伝えて放散させることができ、多層配線基板
１内部の回路配線層は特に制約なく配置できるので、高
密度化・小型化を図ることができる。
(57) [Problem] In a conventional multilayer wiring board of an electronic circuit module, a thermal via hole is used as a heat radiating member, so that the arrangement of internal circuit wiring is limited. SOLUTION: A heat conductive layer 2 having a semiconductor element mounting portion 2a and a lid abutting portion 2b is formed on an upper surface of a multilayer wiring board 1, and a semiconductor element 3 is mounted on the semiconductor element mounting portion 2a. It is made of a conductive material and has a protrusion 5a on the inside.
Is an electronic circuit module in which the lid 5 having the protrusion 5a is attached to the lid abutment 2b. The heat generated by the semiconductor element 3 is transferred to the lid 5 via the heat conductive layer 2 and the protrusion 5a.
The circuit wiring layers inside the multilayer wiring board 1 can be arranged without any particular restrictions, so that high density and small size can be achieved.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は各種の電子機器や電
子装置等の重要部に用いられる、基板上に搭載された半
導体素子を金属ケース等の蓋体で覆って成る電子回路モ
ジュールに関し、特に蓋体を半導体素子の放熱構造に利
用した電子回路モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic circuit module which is used for important parts of various electronic devices and electronic devices and which is formed by covering a semiconductor element mounted on a substrate with a cover such as a metal case. The present invention relates to an electronic circuit module using a lid for a heat dissipation structure of a semiconductor element.
【０００２】[0002]
【従来の技術】最近の電子機器や電子装置に対しては小
型化や薄型化・高機能化・低コスト化等の要求が絶える
ことがなく、それらの要求を実現するために、電子機器
や電子装置を構成する半導体装置である電子回路モジュ
ールに対しても同様に小型化・薄型化・高機能化・低コ
スト化の検討が急速に押し進められている。2. Description of the Related Art The demand for smaller, thinner, more functional, and lower cost electronic devices and electronic devices has been constantly increasing. In the same way, studies on miniaturization, thinning, high functionality, and low cost of electronic circuit modules, which are semiconductor devices constituting electronic devices, have been rapidly advanced.
【０００３】このような電子回路モジュールは、一般
に、回路基板を構成する基板上に電子部品や半導体素子
が搭載されて電子回路を構成し、さらに電子回路の保護
や電磁シールドのためにこれら電子部品や半導体素子を
覆うように金属ケースが取着されることにより構成され
ている。[0003] Such electronic circuit modules generally constitute electronic circuits by mounting electronic components and semiconductor elements on a circuit board that constitutes a circuit board, and furthermore, these electronic components are used for protection of the electronic circuits and electromagnetic shielding. And a metal case is attached so as to cover the semiconductor element.
【０００４】この電子回路モジュールを構成する基板に
は、例えば、酸化アルミニウム質焼結体を主成分とする
セラミックス材料や窒化アルミニウム質焼結体を主成分
とする高熱伝導性のセラミックス材料、あるいはガラス
材料と有機材料とから成るガラスエポキシ、またはセラ
ミック材料に比べて低温焼成が可能なガラスセラミック
ス等が用いられている。これらの基板材料について電子
回路モジュールでは、その用途によって以下のように各
基板材料が使い分けられている。The substrate constituting the electronic circuit module includes, for example, a ceramic material mainly composed of an aluminum oxide sintered body, a high thermal conductive ceramic material mainly composed of an aluminum nitride sintered body, or glass. Glass epoxy made of a material and an organic material, glass ceramics that can be fired at a lower temperature than ceramic materials, and the like are used. Regarding these substrate materials, in the electronic circuit module, the respective substrate materials are properly used depending on the application as follows.
【０００５】例えば、酸化アルミニウム質焼結体を主成
分とするセラミックス材料は、安定性や信頼性の高い絶
縁材料であるが、約1400〜1650℃程度の高温で焼成しな
ければならないために配線導体の材料に高融点金属であ
るタングステンやモリブデン等を用いる必要があり、こ
れら高融点金属が高比抵抗金属材料であることから、高
速信号処理を行なう電子回路モジュールには適用が困難
である。For example, a ceramic material containing an aluminum oxide sintered body as a main component is a highly stable and reliable insulating material. However, since it must be fired at a high temperature of about 1400 to 1650 ° C., wiring It is necessary to use a high melting point metal such as tungsten or molybdenum as the material of the conductor, and since such a high melting point metal is a high specific resistance metal material, it is difficult to apply it to an electronic circuit module that performs high-speed signal processing.
【０００６】また、窒化アルミニウム質焼結体を主成分
とする高熱伝導性のセラミックス材料は、良好な放熱性
を有する点では有効であるが、一般的な民生分野の電子
回路モジュールに対しては高価であり、低コスト化を図
ることが困難である。A ceramic material having a high thermal conductivity, which is mainly composed of an aluminum nitride sintered body, is effective in that it has good heat dissipation, but is not suitable for general electronic circuit modules in the consumer field. It is expensive and it is difficult to reduce the cost.
【０００７】また、ガラス材料と有機材料とから成るガ
ラスエポキシは、安価であるが耐熱性が不十分であり、
熱的な安定性も要求される電子回路モジュールには不向
きである。Further, glass epoxy comprising a glass material and an organic material is inexpensive but has insufficient heat resistance.
It is not suitable for electronic circuit modules that also require thermal stability.
【０００８】これに対し、セラミックス材料に比べて低
温でかつ短時間で焼成可能であるガラスセラミックス
は、低コストで作製することができ、さらに配線導体の
材料に低融点金属材料であるＡｕやＡｇ・Ｃｕ等の低比
抵抗金属材料を使用できるため、高速信号処理を行なう
電子回路モジュールに有利である。On the other hand, glass ceramics which can be fired at a lower temperature and in a shorter time than ceramic materials can be manufactured at a low cost, and further, a low melting point metal material such as Au or Ag is used as a wiring conductor material. -Since a low resistivity metal material such as Cu can be used, it is advantageous for an electronic circuit module that performs high-speed signal processing.
【０００９】また、これらの基板材料は用途によって使
い分けられ、近年の電子回路モジュールの高機能化に対
し、半導体素子を直接搭載して小型化を達成するに際し
て、半導体素子の小型化・高密度化・高電力化に伴う半
導体素子の発熱を以下に放熱させるかが重要な課題とな
っている。その放熱対策の手法としては、例えば、高熱
伝導率材料からなる基板に直接に半導体素子を実装する
手法や、半導体素子直下の基板に多数のサーマルビアホ
ールと呼ばれる放熱部材を基板に貫通させて形成する手
法等が挙げられる。In addition, these substrate materials are properly used depending on the application. In order to attain the miniaturization by directly mounting the semiconductor element in response to the recent enhancement of the function of the electronic circuit module, the miniaturization and the high density of the semiconductor element are required. An important issue is how to dissipate the heat generated by the semiconductor element due to the higher power. As a measure for the heat radiation, for example, a method of directly mounting a semiconductor element on a substrate made of a material having a high thermal conductivity or a method of forming a large number of thermal via holes through a heat radiation member called a thermal via hole in a substrate immediately below the semiconductor element is formed. And the like.
【００１０】一方、半導体素子の搭載における電気的接
続手法についても、実装面積の小型化を図るため、従来
のワイヤボンディングに変わり、金属バンプなどを用い
たいわゆるフリップチップ実装等の手法が実用化されて
いる。On the other hand, as for the electrical connection method for mounting a semiconductor element, a method such as so-called flip-chip mounting using metal bumps has been put into practical use instead of conventional wire bonding in order to reduce the mounting area. ing.
【００１１】さらに、基板の小型化の観点から、基板の
表面側に半導体素子を搭載するのではなく、基板の裏面
側にキャビティを設けて半導体素子を埋設して搭載する
ことにより、基板表面のチップ部品実装面積を増加させ
て有効に活用することによって、さらなる小型化が可能
となっている。Further, from the viewpoint of miniaturization of the substrate, instead of mounting the semiconductor element on the front side of the substrate, a cavity is provided on the back side of the substrate and the semiconductor element is buried and mounted. By further increasing the chip component mounting area and utilizing it effectively, further miniaturization is possible.
【００１２】[0012]
【発明が解決しようとする課題】しかしながら、さらに
小型化と低コスト化とを両立させた電子回路モジュ一ル
の要求が強まっており、その中で半導体素子の信頼性を
確保するために、電子回路モジュールに対しては従来以
上の良好な放熱性が必要とされるようになっている。However, there is an increasing demand for an electronic circuit module that achieves both a reduction in size and a reduction in cost. For circuit modules, better heat dissipation than before is required.
【００１３】そのような放熱性の確保は、例えば基板の
裏面側に設けたキャビティの底部から基板の表面に貫通
させてサーマルビアホールと言われる放熱用貫通導体を
設置し、これを基板の表面に形成した金属電極部に接続
して、この金属電極部に金属等から成る放熱部材を半田
付けにより取着することによって達成することができ
る。さらに、その金属放熱部材を放熱性の良い金属等か
ら成る、電子回路モジュールのケース（蓋体）と密着さ
せることにより、さらなる放熱が可能となる。In order to ensure such heat dissipation, for example, a heat dissipation through conductor called a thermal via hole is provided by penetrating from the bottom of a cavity provided on the back surface side of the substrate to the surface of the substrate, and this is provided on the surface of the substrate. This can be achieved by connecting to the formed metal electrode portion and attaching a heat radiating member made of metal or the like to the metal electrode portion by soldering. Further, by bringing the metal heat radiating member into close contact with a case (cover) of an electronic circuit module made of a metal having a good heat radiating property, further heat radiating becomes possible.
【００１４】しかしながら、サーマルビアホールは基板
を貫通して形成されることによって半導体素子からの発
熱を伝達し放熱させているため、サーマルビアホールが
基板を貫通している部分では多層配線基板の内部の回路
配線を任意に配置することが不可能となり、例えば内層
される回路配線はサーマルビアホールを避けて配置せざ
るを得ないため、回路配線の引き回しが長くなって電気
的損失を増加させてしまう等、電子回路モジュールの小
型化の面で大きな制約を受けるという問題点があった。However, since the thermal via hole penetrates through the substrate to transmit and radiate heat generated from the semiconductor element, the thermal via hole penetrates the substrate, so that the circuit inside the multilayer wiring substrate is not provided. It is impossible to arrange the wiring arbitrarily.For example, the circuit wiring in the inner layer has to be arranged avoiding the thermal via hole, so the wiring of the circuit wiring becomes longer and the electric loss increases. There is a problem that the electronic circuit module is greatly restricted in terms of miniaturization.
【００１５】さらに、放熱部材を余分に用意する必要が
あると同時に、ケ一スとの接続においてその放熱部材の
高さがケ一スの高さつまり製品高さを決定してしまい、
また、放熱部材を取着するための半田付けにおいて半田
量の制御や半田厚み制御が困難であることから、製品高
さのばらつきが大きくなってしまうという問題点があっ
た。Further, it is necessary to prepare an extra heat dissipating member, and at the same time, in connection with the case, the height of the heat dissipating member determines the height of the case, that is, the product height.
In addition, since it is difficult to control the amount of solder and control the thickness of solder in soldering for attaching the heat radiating member, there has been a problem that the variation in product height is increased.
【００１６】本発明は上記従来技術の問題点に鑑みて案
出されたものであり、その目的は、安価な多層回路基板
を用いて内部の回路配線を任意に配置することができる
とともに半導体素子からの発熱を効率よく放熱すること
ができ、高密度化・小型化・低コスト化の要求に対応可
能な高信頼性の電子回路モジュールを提供することにあ
る。The present invention has been devised in view of the above-mentioned problems of the prior art. It is an object of the present invention to arbitrarily arrange internal circuit wiring using an inexpensive multilayer circuit board and to provide a semiconductor device. It is an object of the present invention to provide a highly reliable electronic circuit module that can efficiently radiate heat generated from a semiconductor device and that can meet demands for higher density, smaller size, and lower cost.
【００１７】[0017]
【課題を解決するための手段】本発明の電子回路モジュ
ールは、多層配線基板の上面に、半導体素子搭載部およ
び蓋体当接部を有する熱伝導層が形成され、半導体素子
が前記半導体素子搭載部に搭載されるとともに、熱伝導
材料から成り、内側に突出部を有する蓋体が前記突出部
を前記蓋体当接部に当接させて取着されていることを特
徴とするものである。According to the electronic circuit module of the present invention, a heat conductive layer having a semiconductor element mounting portion and a lid abutting portion is formed on an upper surface of a multilayer wiring board. And a lid body made of a heat conductive material and having a protruding portion on the inside is attached by bringing the protruding portion into contact with the lid contact portion. .
【００１８】[0018]
【発明の実施の形態】以下、本発明の電子回路モジュー
ルについて、図面を参照しながら詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an electronic circuit module according to the present invention will be described in detail with reference to the drawings.
【００１９】図１は本発明の電子回路モジュールの実施
の形態の一例を示す、蓋体を除いた状態の上面図であ
り、図２は蓋体を取着した状態を示す図１におけるＡ−
Ａ’線断面図である。FIG. 1 is a top view showing an example of an embodiment of an electronic circuit module according to the present invention, with a cover removed, and FIG.
FIG. 3 is a sectional view taken along line A ′.
【００２０】これらの図において、１は電子回路モジュ
ールの基板本体部となる多層配線基板であり、複数の絶
縁層と回路配線層および貫通導体等により回路基板を構
成している。この多層配線基板１には、セラミック多層
配線基板やガラスセラミック多層配線基板を始めとし
て、ガラスエポキシ基板によるもの等種々の材料から成
る基板をを用いることができる。In these figures, reference numeral 1 denotes a multilayer wiring board serving as a board main body of an electronic circuit module, and the circuit board is constituted by a plurality of insulating layers, circuit wiring layers, through conductors and the like. As the multilayer wiring board 1, substrates made of various materials such as a ceramic epoxy wiring board and a glass-ceramic multilayer wiring board can be used.
【００２１】２は多層配線基板１の上面に形成された熱
伝導層であり、この熱伝導層２は多層配線基板１の上面
における半導体素子搭載部２ａおよび蓋体当接部２ｂを
有している。このような熱伝導層２には、多層配線基板
１の絶縁層間の電気的導通を確保するためのビア導体等
と同様の金属材料を始めとする熱伝導性の良好な伝熱材
料を用いることができる。例えば、ビア導体と同様に導
体ペーストを用いて形成する場合であれば、Ａｇ・Ａｕ
・Ｃｕ等の金属粉末と有機バインダ等により調製したペ
ーストを用いればよく、多層配線基板１の絶縁層を構成
するセラミックグリーンシートに形成した凹部に印刷し
充填して焼成させること等により所望の形状・寸法の熱
伝導層２を形成すればよい。Reference numeral 2 denotes a heat conductive layer formed on the upper surface of the multilayer wiring board 1. The heat conductive layer 2 has a semiconductor element mounting portion 2a and a lid contact portion 2b on the upper surface of the multilayer wiring substrate 1. I have. For such a heat conductive layer 2, a heat conductive material having good heat conductivity such as a metal material similar to a via conductor or the like for ensuring electrical conduction between insulating layers of the multilayer wiring board 1 is used. Can be. For example, in the case of using a conductive paste in the same manner as the via conductor, Ag / Au
A paste prepared by using a metal powder such as Cu and an organic binder may be used, and a desired shape may be obtained by printing, filling, and firing a concave portion formed in a ceramic green sheet constituting an insulating layer of the multilayer wiring board 1. -It is only necessary to form the heat conductive layer 2 having dimensions.
【００２２】なお、熱伝導層２の寸法としては、厚みは
例えば多層配線基板１の絶縁層の最上層の１層分があれ
ばよいが、数層分にわたる厚みとすれば熱伝導性の点で
有利となる。また、面積は半導体素子３を搭載する半導
体素子搭載部２ａと後述する蓋体５の突出部５ａを当接
させる蓋体当接部２ｂとが確保できる面積があればよ
く、半導体素子３からの発熱を十分に逃がせるように考
慮する。The thickness of the heat conductive layer 2 may be, for example, the thickness of one uppermost layer of the insulating layer of the multilayer wiring board 1. Is advantageous. Further, the area only needs to be large enough to secure a semiconductor element mounting portion 2a for mounting the semiconductor element 3 and a lid contact portion 2b for contacting a projecting portion 5a of the lid 5 described later. Consider enough to allow the fever to escape.
【００２３】３は半導体素子であり、半導体素子搭載部
２ａにＡｕＳｎろうやＡｕＳｉろう、あるいは熱硬化型
Ａｇペースト等の熱伝導性の良好な接着材料により接着
されて搭載され、多層配線基板１の回路配線導体とワイ
ヤボンディング等により電気的に接続されるとともに、
その動作に伴う発熱は熱伝導層２に伝えられることとな
る。また、半導体素子３は、搭載後に素子およびボンデ
ィングワイヤ等を保護する目的で、半導体素子封止用エ
ポキシ樹脂やシリコーン樹脂等の封止樹脂により封止さ
れる。Reference numeral 3 denotes a semiconductor element, which is mounted on the semiconductor element mounting portion 2a by bonding it with a heat conductive adhesive material such as AuSn brazing, AuSi brazing or thermosetting Ag paste. While being electrically connected to the circuit wiring conductor by wire bonding, etc.,
Heat generated by the operation is transmitted to the heat conductive layer 2. Further, the semiconductor element 3 is sealed with a sealing resin such as a semiconductor element sealing epoxy resin or a silicone resin for the purpose of protecting the element and the bonding wires after mounting.
【００２４】また、いわゆるフリップチップ実装法等の
手法により金属バンプを介して接続し、半導体素子３の
下面と多層配線基板１（半導体素子搭載部２ａ）との間
に熱伝導の良好な絶縁樹脂、いわゆるアンダーフィルを
注入して、熱伝導層２への半導体素子３の熱の伝導を良
好なものとすることもできる。Further, the connection is made via metal bumps by a method such as a so-called flip chip mounting method, and an insulating resin having good heat conduction is provided between the lower surface of the semiconductor element 3 and the multilayer wiring board 1 (semiconductor element mounting portion 2a). In other words, a so-called underfill can be injected to improve the heat conduction of the semiconductor element 3 to the heat conductive layer 2.
【００２５】４は半導体素子３とともに多層配線基板１
の上面に搭載され実装される各種の電子部品であり、例
えばチップコンデンサやチップ抵抗・チップインダクタ
等である。Reference numeral 4 denotes a multi-layer wiring board 1 together with the semiconductor element 3.
Various electronic components mounted and mounted on the upper surface of the device, such as a chip capacitor, a chip resistor, and a chip inductor.
【００２６】５は蓋体であり、熱伝導材料から成り、多
層配線基板１にその上面を覆って取着され、基板１に搭
載された半導体素子３や電子部品４を容器内部に収容し
て保護するものである。また、蓋体５は内側に突出部５
ａを有しており、この突出部５ａを熱伝導層２の蓋体当
接部２ｂに当接させている。突出部５ａと蓋体当接部２
ｂとは、熱伝導性を高めるために、半田等を用いベルト
式リフロー炉等を用いて接続してもよい。Reference numeral 5 denotes a lid, which is made of a heat conductive material, is attached to the multilayer wiring board 1 so as to cover its upper surface, and houses the semiconductor element 3 and the electronic component 4 mounted on the board 1 in a container. To protect. Also, the lid 5 has a protruding portion 5
a, and the projecting portion 5 a is brought into contact with the lid contact portion 2 b of the heat conductive layer 2. Projecting portion 5a and lid contact portion 2
In order to enhance the thermal conductivity, b may be connected using solder or the like and using a belt-type reflow furnace or the like.
【００２７】このような蓋体５は、半導体素子３や電子
部品４の保護とともに電磁シールドの目的で多層配線基
板１に取着されるものであり、例えば洋白・鉄・ＳＵＳ
等の材料が用いられ、その表面にはＮｉやＳｎ・半田等
のメッキを施すことで半田濡れ性を向上させることがで
きる。また、蓋体５は、例えば金型を用いて所望の寸法
に加工することにより形成される。Such a cover 5 is attached to the multilayer wiring board 1 for the purpose of protecting the semiconductor element 3 and the electronic component 4 and also providing electromagnetic shielding. For example, nickel silver, iron, SUS, etc.
Such a material is used, and the surface thereof is plated with Ni, Sn, solder, or the like, so that the solder wettability can be improved. The lid 5 is formed by processing to a desired size using a mold, for example.
【００２８】なお、蓋体５には多層配線基板１との位置
合わせを行なうためのべろ部５ｂを設けておき、これを
多層配線基板１の側面に設けたべろ部挿入孔やべろ部挿
入溝（図示せず）に挿入することにより、正確に位置合
わせして取着させることができる。The cover 5 is provided with a bellows portion 5b for aligning with the multilayer wiring board 1, and this is provided with a bellows insertion hole or a bellows insertion groove (provided on the side surface of the multilayer wiring board 1). (Not shown), it is possible to accurately align and attach.
【００２９】また、突出部５ａは、熱伝導層２の蓋体当
接部２ｂに当接させて半導体素子３からの熱を十分に伝
導し蓋体５から放散させることができる形状および寸法
とすればよく、また、蓋体当接部２ｂとの当接部を半田
付けすることにより多層配線基板１との接着強度が満足
できるような形状および寸法として形成すればよい。The projecting portion 5a has a shape and size capable of sufficiently conducting heat from the semiconductor element 3 and dissipating the heat from the cover 5 by being brought into contact with the cover contact portion 2b of the heat conductive layer 2. The shape and dimensions may be such that the contact strength with the lid contact portion 2b is soldered so that the adhesive strength with the multilayer wiring board 1 can be satisfied.
【００３０】このような突出部５ａは、例えば蓋体５を
加工するための金型に突出部５ａとなる部分を設けた
り、あるいはパンチ加工等により蓋体５を加工して凹部
として形成することにより所望の形状・位置・寸法に形
成される。The protrusion 5a is formed, for example, by providing a part for forming the protrusion 5a in a mold for processing the lid 5, or by processing the lid 5 by punching or the like to form a recess. Thus, a desired shape, position and dimensions are formed.
【００３１】このように、本発明の電子回路モジュール
によれば、多層配線基板１の上面において半導体素子３
が搭載された熱伝導層２の蓋体当接部２ｂに蓋体５の突
出部５ａを当接させていることから、半導体素子３で発
生した熱は熱伝導層２を経て突出部５ａから蓋体５に効
率よく伝導していき、蓋体５から大気中あるいは蓋体５
に取着された放熱用部材（図示せず）に放散されること
となる。As described above, according to the electronic circuit module of the present invention, the semiconductor element 3
Since the protruding portion 5a of the lid 5 is brought into contact with the lid abutting portion 2b of the heat conductive layer 2 on which is mounted, the heat generated in the semiconductor element 3 passes through the heat conductive layer 2 from the protruding portion 5a. Conduction is efficiently conducted to the lid 5, and the air is transferred from the lid 5 to the air or the lid 5.
The heat is dissipated to the heat-dissipating member (not shown) attached to the base member.
【００３２】また、熱伝導層２は多層の絶縁層の最上層
と一体化するようにして多層配線基板１の上面に形成さ
れ、従来のサーマルビアホールのように多層配線基板１
の内部を貫通していないため、熱伝導層２の下部におい
ても多層配線基板１の内部の回路配線を自由に引き回す
ことができ、内部の回路配線層を特に制約なしに配置し
て多層配線基板１の高密度化・小型化を図ることができ
る。The heat conductive layer 2 is formed on the upper surface of the multilayer wiring board 1 so as to be integrated with the uppermost layer of the multilayer insulating layer.
, The circuit wiring inside the multilayer wiring board 1 can be freely routed even under the heat conductive layer 2, and the internal circuit wiring layers can be arranged without any particular restrictions to make the multilayer wiring board 1 can be made denser and smaller.
【００３３】さらに、熱伝導層２の蓋体当接部２ｂに蓋
体５の突出部５ａを当接させるだけでも半導体素子３か
らの発熱を効果的に伝導させて放散させることができ、
突出部５ａを蓋体当接部２ｂに半田等の良熱伝導性の接
着剤により接着する場合であっても、突出部５ａはそれ
ら接着剤に対する濡れ性が良好なため余分な接着剤は突
出部５ａの側面に吸い上げられることとなり、蓋体５の
自重を利用して突出部５ａを蓋体当接部２ｂに密着させ
て接合することができるので、蓋体５の高さのばらつ
き、つまり製品高さのばらつきを低減することもでき
る。Further, the heat generated from the semiconductor element 3 can be effectively conducted and dissipated simply by contacting the protrusion 5a of the cover 5 with the cover contact portion 2b of the heat conductive layer 2.
Even when the protruding portion 5a is bonded to the lid abutting portion 2b with a good heat conductive adhesive such as solder, the protruding portion 5a has good wettability with respect to the adhesive, so that the extra adhesive protrudes. Since the protrusion 5a is sucked up to the side surface of the portion 5a and the protrusion 5a can be brought into close contact with the cover abutment portion 2b by using the own weight of the cover 5, and joined, the height variation of the cover 5, that is, Variations in product height can also be reduced.
【００３４】また、熱伝導層２は多層配線基板１の製造
工程において一体的に形成することができ、多層配線基
板１に対して別途放熱部材を搭載する必要がないため、
電子回路モジュールの低コスト化を図ることもできる。Further, since the heat conductive layer 2 can be formed integrally in the manufacturing process of the multilayer wiring board 1, there is no need to separately mount a heat radiating member on the multilayer wiring board 1.
The cost of the electronic circuit module can be reduced.
【００３５】なお、本発明は以上の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
で種々の変更・改良を施すことは何ら差し支えない。It should be noted that the present invention is not limited to the above-described embodiments, and various changes and improvements may be made without departing from the spirit of the present invention.
【００３６】[0036]
【発明の効果】本発明の電子回路モジュールによれば、
多層配線基板の上面に半導体素子搭載部および蓋体当接
部を有する熱伝導層を形成し、半導体素子を半導体素子
搭載部に搭載するとともに、熱伝導材料から成る蓋体の
内側に突出部を形成して、この突出部を蓋体当接部に当
接させて蓋体を多層配線基板に取着していることから、
半導体素子の発熱を熱伝導層と突出部とを介して蓋体に
効率よく伝えて放散させることが可能となる。According to the electronic circuit module of the present invention,
A heat conductive layer having a semiconductor element mounting portion and a lid contact portion is formed on the upper surface of the multilayer wiring board, and the semiconductor element is mounted on the semiconductor element mounting portion, and a protrusion is formed inside the lid made of a heat conductive material. Since the lid is attached to the multilayer wiring board by contacting the projecting portion with the lid abutting portion,
The heat generated by the semiconductor element can be efficiently transmitted to the lid via the heat conductive layer and the protruding portion and dissipated.
【００３７】また、多層配線基板における放熱部材であ
る熱伝導層が基板を貫通していないため、熱伝導層の下
部においても多層配線基板の内部における回路配線層を
特に制約無しに配置させることが可能となり、従来のサ
ーマルビアホールを用いたものに比べて高密度で小型の
電子回路モジュールとなる。Further, since the heat conductive layer, which is a heat dissipating member, in the multilayer wiring board does not penetrate the substrate, the circuit wiring layer inside the multilayer wiring board can be arranged without any particular restriction below the heat conductive layer. This makes it possible to provide a high-density and small-sized electronic circuit module as compared with a conventional one using a thermal via hole.
【００３８】以上により、本発明によれば、安価な多層
回路基板を用いて内部の回路配線を任意に配置すること
ができるとともに半導体素子からの発熱を効率よく放熱
することができ、高密度化・小型化・低コスト化の要求
に対応可能な高信頼性の電子回路モジュールを提供する
ことができた。As described above, according to the present invention, the internal circuit wiring can be arbitrarily arranged using an inexpensive multilayer circuit board, and the heat generated from the semiconductor element can be efficiently radiated. -A highly reliable electronic circuit module that can meet the demand for miniaturization and cost reduction can be provided.
【図１】本発明の電子回路モジュールの実施の形態の一
例を示す、蓋体を除いた状態の上面図である。FIG. 1 is a top view showing an example of an electronic circuit module according to an embodiment of the present invention, with a lid removed.
【図２】本発明の電子回路モジュールの実施の形態の一
例を示す、蓋体を取着した状態における図１のＡ−Ａ’
線断面図である。FIG. 2 shows an example of an embodiment of the electronic circuit module of the present invention, and shows AA ′ of FIG. 1 in a state where a lid is attached.
It is a line sectional view.
１・・・・・多層配線基板 ２・・・・・熱伝導層 ２ａ・・・・半導体素子搭載部 ２ｂ・・・・蓋体当接部 ３・・・・・半導体素子 ５・・・・・蓋体 ５ａ・・・・突出部 1 Multilayer wiring board 2 Thermal conductive layer 2a Semiconductor element mounting section 2b Lid contact section 3 Semiconductor element 5 ... .Lid 5a...
Claims (1)
部および蓋体当接部を有する熱伝導層が形成され、半導
体素子が前記半導体素子搭載部に搭載されるとともに、
熱伝導材料から成り、内側に突出部を有する蓋体が前記
突出部を前記蓋体当接部に当接させて取着されているこ
とを特徴とする電子回路モジュール。1. A heat conductive layer having a semiconductor element mounting portion and a lid abutting portion is formed on an upper surface of a multilayer wiring board, and a semiconductor element is mounted on the semiconductor element mounting portion.
An electronic circuit module, wherein a lid made of a heat conductive material and having a protruding portion inside is attached with the protruding portion abutting on the lid abutting portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36697498A JP3660817B2 (en) | 1998-12-24 | 1998-12-24 | Electronic circuit module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36697498A JP3660817B2 (en) | 1998-12-24 | 1998-12-24 | Electronic circuit module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000195996A true JP2000195996A (en) | 2000-07-14 |
| JP3660817B2 JP3660817B2 (en) | 2005-06-15 |
Family
ID=18488162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36697498A Expired - Fee Related JP3660817B2 (en) | 1998-12-24 | 1998-12-24 | Electronic circuit module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3660817B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001008221A1 (en) * | 1999-07-26 | 2001-02-01 | Tdk Corporation | High frequency module |
| JP2004506326A (en) * | 2000-08-04 | 2004-02-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Method for electrically connecting a semiconductor component to an electrical component group |
| JP2006165049A (en) * | 2004-12-02 | 2006-06-22 | Murata Mfg Co Ltd | Electronic component apparatus |
| JP2012049307A (en) * | 2010-08-26 | 2012-03-08 | Hitachi Kokusai Electric Inc | Circuit board device |
-
1998
- 1998-12-24 JP JP36697498A patent/JP3660817B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001008221A1 (en) * | 1999-07-26 | 2001-02-01 | Tdk Corporation | High frequency module |
| JP2004506326A (en) * | 2000-08-04 | 2004-02-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Method for electrically connecting a semiconductor component to an electrical component group |
| JP4800556B2 (en) * | 2000-08-04 | 2011-10-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Method for electrically connecting a semiconductor component with an electrical component group |
| JP2006165049A (en) * | 2004-12-02 | 2006-06-22 | Murata Mfg Co Ltd | Electronic component apparatus |
| JP4720162B2 (en) * | 2004-12-02 | 2011-07-13 | 株式会社村田製作所 | Electronic component equipment |
| JP2012049307A (en) * | 2010-08-26 | 2012-03-08 | Hitachi Kokusai Electric Inc | Circuit board device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3660817B2 (en) | 2005-06-15 |
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