CN119050122A - Infrared detector and system - Google Patents
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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Abstract
本公开涉及一种红外探测器及系统，该红外探测器包括：基底；量子点探测结构，量子点探测结构位于基底的一侧；量子点探测结构包括在基底的一侧依次层叠的至少两个红外感光层，各红外感光层响应的红外波段不同；量子点探测结构用于响应不同波段的红外光信号输出对应的电信号至基底。如此，通过设置量子点探测结构包括至少两个红外感光层，且各红外感光层响应的红外波段不同，使红外探测器能够同时采集多个红外波段信息，进一步实现红外波段宽光谱探测成像。
The present disclosure relates to an infrared detector and system, the infrared detector comprising: a substrate; a quantum dot detection structure, the quantum dot detection structure being located on one side of the substrate; the quantum dot detection structure comprising at least two infrared photosensitive layers stacked in sequence on one side of the substrate, each infrared photosensitive layer responding to a different infrared band; the quantum dot detection structure is used to respond to infrared light signals of different bands and output corresponding electrical signals to the substrate. Thus, by setting the quantum dot detection structure to include at least two infrared photosensitive layers, and each infrared photosensitive layer responding to a different infrared band, the infrared detector can simultaneously collect information of multiple infrared bands, further realizing infrared band wide spectrum detection imaging.
Description
Technical Field
The disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a system.
Background
In the infrared imaging field, the infrared detector is developed from units to multiple units and then from multiple units to a focal plane, so that various types of infrared detectors are formed, for example, the infrared detector can comprise a flexible curved substrate and a traditional flexible sensing functional unit integrated infrared detector, wherein the infrared detector is formed by bending or folding a planar array into a hemispherical structure and combining the hemispherical structure with a single lens, the curvature of the focal plane of the lens is matched to correct spherical aberration, high-resolution imaging of the single lens is realized, and the development potential and development space of the flexible infrared focal plane detector are relatively large.
However, the infrared band detectable by the existing infrared detectors such as the flexible infrared focal plane detector is limited, only single infrared band information can be acquired, and a plurality of infrared band information cannot be acquired at the same time, so that wide spectrum detection imaging of the infrared band is difficult to realize, and development of the infrared detector is limited.
Disclosure of Invention
To solve or at least partially solve the above technical problems, the present disclosure provides an infrared detector and a system.
The present disclosure provides an infrared detector, comprising:
A substrate;
the quantum dot detection structure comprises at least two infrared sensitive layers which are sequentially laminated on one side of the substrate, wherein the infrared sensitive layers respond to different infrared wave bands;
the quantum dot detection structure is used for responding to infrared light signals of different wave bands to output corresponding electric signals to the substrate.
Optionally, each of the infrared photosensitive layers forms a PN junction, and two adjacent infrared photosensitive layers form two opposite PN junctions.
Optionally, the quantum dot detection structure includes:
a plurality of first electrodes disposed at intervals on one side of the substrate;
the first infrared photosensitive layer is positioned on one side of the first electrode, which is away from the substrate;
The second infrared photosensitive layer is positioned at one side of the first infrared photosensitive layer, which is away from the first electrode;
The second electrode is positioned on one side of the second infrared photosensitive layer, which is away from the first infrared photosensitive layer.
Optionally, the first infrared sensing layer includes a first N-type quantum dot layer, a first intrinsic type quantum dot layer, and a first P-type quantum dot layer sequentially stacked along a direction in which the first electrode points to the second electrode;
the second infrared photosensitive layer comprises a second P-type quantum dot layer, a second intrinsic-type quantum dot layer and a second N-type quantum dot layer which are sequentially stacked along the direction that the first electrode points to the second electrode.
Optionally, the first P-type quantum dot layer is multiplexed into the second P-type quantum dot layer.
Optionally, the response band of the first intrinsic type quantum dot layer and the response band of the second intrinsic type quantum dot layer are any two of short wave infrared, medium wave infrared and long wave infrared.
The disclosure also provides an infrared detection system, which comprises a power supply and any one of the infrared detectors;
The power supply is connected with the infrared detector and is used for providing activation voltage for the infrared detector.
Optionally, one end of the power supply is connected with the substrate of the infrared detector, and the other end of the power supply is connected with the second electrode of the infrared detector.
Optionally, the power source includes a first power source and a second power source;
the first power supply is used for providing positive voltage, and the second power supply is used for providing negative voltage.
Optionally, a lens is also included;
The lens is positioned on one side of the light incident surface of the infrared detector.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
The infrared detector provided by the embodiment of the disclosure comprises a substrate, a quantum dot detection structure, wherein the quantum dot detection structure is positioned on one side of the substrate, the quantum dot detection structure comprises at least two infrared photosensitive layers which are sequentially stacked on one side of the substrate, infrared wavebands responded by the infrared photosensitive layers are different, and the quantum dot detection structure is used for responding infrared light signals of different wavebands and outputting corresponding electric signals to the substrate. Therefore, the quantum dot detection structure comprises at least two infrared photosensitive layers, and infrared wave bands responded by the infrared photosensitive layers are different, so that the infrared detector can collect a plurality of infrared wave band information at the same time, and infrared wave band wide spectrum detection imaging is further realized.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of an infrared detector according to an embodiment of the disclosure;
Fig. 2 is a schematic structural diagram of another infrared detector according to an embodiment of the disclosure;
Fig. 3 is a schematic structural diagram of an infrared detector according to an embodiment of the disclosure;
fig. 4 is a schematic structural diagram of another infrared detector according to an embodiment of the disclosure;
fig. 5 is a schematic structural diagram of an infrared detection system according to an embodiment of the disclosure.
The infrared light source comprises a 01-infrared light sensing layer, 110, a substrate, 120, a quantum dot detection structure, 121, a first electrode, 122, a first infrared light sensing layer, 1221, a first N-type quantum dot layer, 1222, a first intrinsic-type quantum dot layer, 1223, a first P-type quantum dot layer, 123, a second infrared light sensing layer, 1231, a second P-type quantum dot layer, 1232, a second intrinsic-type quantum dot layer, 1233, a second N-type quantum dot layer, 124, a second electrode, 320, a first power supply, 220 and a second power supply.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein, and it is apparent that the embodiments in the specification are only some, rather than all, of the embodiments of the present disclosure.
An infrared detector and a system provided by embodiments of the present disclosure are described below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an infrared detector according to an embodiment of the disclosure. Referring to fig. 1, the infrared detector comprises a substrate 110, a quantum dot detection structure 120, wherein the quantum dot detection structure 120 is positioned on one side of the substrate 110, the quantum dot detection structure 120 comprises at least two infrared sensing layers 01 which are sequentially stacked on one side of the substrate 110, infrared wave bands responded by the infrared sensing layers 01 are different, and the quantum dot detection structure 120 is used for responding infrared light signals of different wave bands to output corresponding electric signals to the substrate 110.
Wherein the substrate 110 is a substrate for carrying the quantum dot detection structure 120. Illustratively, the substrate 110 may be a silicon-based readout circuitry substrate or other type of substrate for probe imaging, without limitation.
Wherein the infrared photosensitive layer 01 comprises a colloid quantum dot material. The colloidal quantum dot (quantum dot for short) is a semiconductor nanocrystal, and its properties can be directly controlled by quantum confinement effect, for example, for infrared band, by controlling the reaction conditions in the preparation process, the response band of the quantum dot can reach the fields of short wave infrared, medium wave infrared, long wave infrared and terahertz, where the infrared band for the response of each infrared sensing layer 01 is not limited.
It should be noted that, the existing infrared detector uses infrared bulk materials such as indium gallium arsenide (InGaAs), indium antimonide (InSb), mercury cadmium telluride (HgCdTe), etc., and due to the requirement of lattice structure, these materials need high quality single crystal substrates, and the photoelectric detector based on these bulk materials is difficult to integrate with the relevant silicon-based readout circuit, often needs to use flip-chip bonding technology of molecular beam epitaxy to form the infrared detector, thus improving the manufacturing cost of the infrared detector and limiting the application field of the infrared detector.
And the occurrence of the colloid quantum dots solves the problems faced by the existing infrared block materials. The colloidal quantum dots have the advantages of adjustable optical property, liquid phase treatment, compatibility with silicon base and the like, can be operated by a colloid technology which is low in cost and easy to expand, for example, the liquid phase colloidal quantum dots can be processed on a silicon base readout circuit in a spin coating, spray coating or photoetching mode, an infrared device can be obtained, the operation is simple, the method is suitable for large-scale preparation and batch production, and processes such as expensive flip-chip bonding, molecular beam epitaxy and the like are not needed, so that the material processing cost is greatly reduced.
Specifically, after the external infrared light is incident on the quantum dot detection structure 120, the infrared photosensitive layer 01 in the quantum dot detection structure 120 performs photoelectric response based on the incident infrared light, that is, converts an infrared light signal of a certain wave band into a corresponding electrical signal, and outputs the electrical signal to the substrate 110, so that a subsequent related circuit performs detection imaging through the electrical signal.
Illustratively, the quantum dot detecting structure 120 may include two infrared photosensitive layers 01, three infrared photosensitive layers 01, or other number of infrared photosensitive layers 01, which may be set according to actual detecting requirements, and is not limited herein.
The infrared detector provided by the embodiment of the disclosure comprises a substrate 110, a quantum dot detection structure 120, wherein the quantum dot detection structure 120 is positioned on one side of the substrate 110, the quantum dot detection structure 120 comprises at least two infrared sensing layers 01 which are sequentially stacked on one side of the substrate 110, infrared wave bands responded by the infrared sensing layers 01 are different, and the quantum dot detection structure 120 is used for responding infrared light signals of different wave bands to output corresponding electric signals to the substrate 110. In this way, the quantum dot detection structure 120 comprises at least two infrared photosensitive layers 01, and infrared wave bands responded by the infrared photosensitive layers 01 are different, so that the infrared detector can collect a plurality of infrared wave band information at the same time, and infrared wave band wide spectrum detection imaging is further realized.
In some embodiments, with continued reference to fig. 1, each infrared photosensitive layer 01 forms a PN junction, and two adjacent infrared photosensitive layers 01 form two opposite PN junctions.
The PN junction comprises an N-type semiconductor and a P-type semiconductor, and the boundary or interface between the two semiconductor materials is called as PN junction. It can be understood that free electrons in the N-type semiconductor region (abbreviated as N-region) diffuse into the P-type semiconductor region (abbreviated as P-region), holes in the P-region diffuse into the N-region, and after diffusion, only charge ions that cannot move are present in the region near the PN junction, which is called the intermediate charge region, and a built-in electric field is formed in the space charge region, with the direction of the N-region pointing to the P-region.
When the two opposite PN junctions are arranged on one side of the substrate, the directions of the built-in electric fields of the two opposite PN junctions are opposite to the directions of the same reference direction, although the directions of the built-in electric fields of the two opposite PN junctions are from the N region to the P region. For example, a layer of P-type semiconductor may be disposed on the surface of the substrate 110, and based on this, two layers of N-type semiconductor and a layer of P-type semiconductor are disposed in turn upwards, so that two adjacent PN junctions may be obtained, the built-in electric field direction of the lower PN junction is upwards, and the built-in electric field direction of the upper PN junction is downwards, and the directions of the two directions are opposite, i.e. two opposite PN junctions, or a layer of N-type semiconductor may be disposed on the surface of the substrate 110, and based on this, two layers of P-type semiconductor and a layer of N-type semiconductor are disposed upwards in turn, so that two opposite PN junctions may be obtained, which are not described herein.
In some embodiments, fig. 2 is a schematic structural diagram of another infrared detector provided in the embodiments of the present disclosure, and referring to fig. 2 on the basis of fig. 1, a quantum dot detection structure 120 includes a plurality of first electrodes 121, a first infrared sensing layer 122 disposed at a side of the substrate 110 and facing away from the substrate 110, a second infrared sensing layer 123 disposed at a side of the first infrared sensing layer 122 facing away from the first electrode 121, and a second electrode 124 disposed at a side of the second infrared sensing layer 123 facing away from the first infrared sensing layer 122.
The first electrode 121 is a bottom electrode of the quantum dot detecting structure 120, and is used for collecting electrons or holes generated by the quantum dot detecting structure 120 based on photoelectric response. For example, the first electrode 121 may be one or more of Indium Tin Oxide (ITO), fluorine doped zinc oxide (FTO), gold, silver, and nichrome, and may be coated by Physical Vapor Deposition (PVD) such as thermal evaporation, magnetron sputtering, etc., and then etched into the first electrode 121 arranged in an array by photolithography and etching methods, or may be formed into the first electrode 121 by other conductive materials and preparation processes, which is not limited herein.
It can be understood that by arranging the first electrodes 121 at intervals on one side of the substrate 110, the number of the first electrodes 121 is increased, so that the first electrodes 121 are arranged on the surface of the substrate in an array, and electrons generated by photoelectric response can be received by the first electrodes 121 at each position. Preferably, each electrode 121 may correspond to a pixel region of the substrate 110 one by one, so as to collect information of each pixel region, thereby effectively improving resolution of the infrared detector.
The second electrode 124 is a top electrode of the quantum dot detecting structure 120, and is used for collecting electrons or holes generated by the quantum dot detecting structure 120 based on photoelectric response. The second electrode 124 may be gold or silver, and may be prepared by thermal evaporation or electron beam evaporation, and the materials and processes for preparing the same are not limited.
For example, the thickness of the first electrode 121 may be 90nm to 110nm, and the thickness of the second electrode 124 may be 5nm to 20nm, and it should be noted that, by setting the thickness range of the second electrode 124 as above, the second electrode 124 can be ensured to have a good transmittance for external infrared light, so that the second electrode is prevented from excessively shielding the external infrared light to prevent the infrared detector from absorbing infrared light, and then the performance of the infrared detector is improved.
Fig. 3 is a schematic structural diagram of an infrared detector according to an embodiment of the disclosure, and fig. 4 is a schematic structural diagram of another infrared detector according to an embodiment of the disclosure. Referring to fig. 2 to 4, the substrate 110, the first electrode 121, the first infrared sensing layer 122, and the second electrode 124 correspond to functionally forming an infrared detector for detecting a first wavelength band (see fig. 3), and the substrate 110, the first electrode 121, the second infrared sensing layer 123, and the second electrode 124 correspond to functionally forming an infrared detector for detecting a second wavelength band (see fig. 4), and the first wavelength band and the second wavelength band are different infrared bands.
Specifically, by setting the first infrared photosensitive layer 122 and the second infrared photosensitive layer 123, the infrared detector comprises two opposite PN junctions, when the activation voltage is applied to the infrared detector by the power supply in order to control the operation of the infrared detector, the direction of the external electric field is consistent with the direction of the built-in electric field in the PN junctions, that is, the positive voltage and the negative voltage are provided, so that the operation of the infrared detector with different wavebands can be controlled according to the difference of the direction of the external electric field, the simultaneous output of two infrared wavebands is realized, and the operation of the infrared detector with different wavebands is difficult to realize by using the same external electric field when two (or more) PN junctions are in the same direction, and the control principle of the external electric field on the infrared detector is described in detail later.
In addition, when the power supply is adopted for applying the activation voltage for the infrared detectors, the infrared detectors in different wave bands can be controlled to work together in a simple and convenient mode.
In some embodiments, referring to fig. 2 to 4, the first infrared sensing layer 122 includes a first N-type quantum dot layer 1221, a first intrinsic-type quantum dot layer 1222, and a first P-type quantum dot layer 1223 sequentially stacked in a direction in which the first electrode 121 is directed toward the second electrode 124, and the second infrared sensing layer 123 includes a second P-type quantum dot layer 1231, a second intrinsic-type quantum dot layer 1232, and a second N-type quantum dot layer 1233 sequentially stacked in a direction in which the first electrode 121 is directed toward the second electrode 124.
The first N-type quantum dot layer 1221 and the second N-type quantum dot layer 1233 are both N-type semiconductors, and the first P-type quantum dot layer 1223 and the second P-type quantum dot layer 1231 are both P-type semiconductors.
Illustratively, taking the orientation and structure shown in fig. 2 as an example, the plurality of first electrodes 121 are disposed at intervals in the upper plane of the substrate 110, the first N-type quantum dot layer 1221 fills and covers the gaps between the plurality of first electrodes 121, the first N-type quantum dot layer 1221, the first intrinsic type quantum dot layer 1222 and the first P-type quantum dot layer 1223 constitute the PN junction below, and the second P-type quantum dot layer 1231, the second intrinsic type quantum dot layer 1232 and the second N-type quantum dot layer 1233 constitute the PN junction above. Thus, a photovoltaic infrared detector is obtained, which is capable of detecting two infrared band information.
It is to be understood that the first intrinsic type quantum dot layer 1222 and the second intrinsic type quantum dot layer 1232 adopt infrared colloid quantum dot materials as photoelectric sensitive materials, and each of them absorbs infrared light of different wavelength bands and generates corresponding electric signals based on photoelectric responses. Illustratively, the quantum dots in the first intrinsic quantum dot layer 1222 and the second intrinsic quantum dot layer are one or more of intrinsic quantum dots such as mercury selenide (HgSe), mercury cadmium telluride (HgCdTe), silver sulfide (Ag 2 S), lead sulfide (PbS), lead selenide (PbSe), mercury telluride (HgTe), cadmium selenide (CdSe), silver telluride (Ag 2 Te), silver selenide (Ag 2 Se), and the like, and by controlling the synthesis time and synthesis temperature of the quantum dots, the spectral range of the quantum dot response can be precisely regulated, and the reaction conditions in the preparation process of the relevant quantum dots can be adjusted according to the actual detection requirements. Therefore, detection of infrared different wave bands can be achieved, the advantages of wide detection wave bands are achieved, the sensitivity of the quantum dots is high, and then the optical response of the infrared detector prepared by the quantum dots is high, and good detection performance is achieved.
Illustratively, the first intrinsic quantum dot layer 1222 and the second intrinsic quantum dot layer 1232 can be prepared by spin coating, spray coating, drop coating, etc., and the thickness thereof can be 200nm to 1000nm, which is not limited herein.
Illustratively, the first and second N-type quantum dot layers 1221 and 1233 may include one or more of bismuth selenide (Bi 2Se3), bismuth sulfide (Bi 2S3), bismuth telluride (Bi 2Te3), zinc oxide (ZnO), cadmium selenide (CdSe), or N-type quantum dots of intrinsic type quantum dots, and the first and second P-type quantum dot layers 1223 and 1231 may include one or more of poly (3-hexylthiophene) (P3 HT), poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS), 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (spiro-ome tad), polytriarylamine (PTAA), or P-type quantum dots of intrinsic type quantum dots, which may be prepared by spin coating, spray coating, physical Vapor Deposition (PVD), or Chemical Vapor Deposition (CVD) to have higher uniformity.
According to the infrared detector disclosed by the embodiment of the disclosure, the first infrared photosensitive layer 122 comprises the first N-type quantum dot layer 1221, the first intrinsic type quantum dot layer 1222 and the first P-type quantum dot layer 1223, the second infrared photosensitive layer 123 comprises the second P-type quantum dot layer 1231, the second intrinsic type quantum dot layer 1232 and the second N-type quantum dot layer 1233, and the first intrinsic type quantum dot layer 1222 and the second intrinsic type quantum dot layer 1232 can be separated by utilizing the first P-type quantum dot layer 1223 and the second P-type quantum dot layer 1231 so as to collect carriers of a PN junction below and carriers of a PN junction above respectively, so that the problem that carriers are interfered between the first intrinsic type quantum dot layer 1222 and the second intrinsic type quantum dot layer 1232 due to direct contact is avoided.
In addition, in practical application, compared with the P-type quantum dot, the N-type quantum dot is easy to couple with the substrate, has higher chemical stability and optical stability, can keep the optical and electrical properties thereof in a wider temperature and pH range, and in this regard, the embodiment of the disclosure sets the related N-type quantum dot layer, namely the first N-type quantum dot layer 1221, on one side of the substrate 110, can realize better coupling effect with the substrate 110, and improves the stability of the infrared detector, so that the signal to noise ratio of the device is higher, and the imaging quality is better.
In some embodiments, referring to fig. 2, the first P-type quantum dot layer 1223 is multiplexed into the second P-type quantum dot layer 1231.
Specifically, taking the azimuth and structure of fig. 2 as an example, after external infrared light irradiates the infrared detector, the first infrared sensing layer 122 and the second infrared sensing layer 123 perform photoelectric response to infrared light signals of different wavebands, so as to generate photo-generated carriers, wherein holes generated by the first intrinsic type quantum dot layer 1222 reach the vicinity of the lower edge of the first P type quantum dot layer 1223, and holes generated by the second intrinsic type quantum dot layer 1232 reach the vicinity of the upper edge of the first P type quantum dot layer 1223, so that no carrier interference is generated.
It can be appreciated that the transport directions of the holes and electrons are opposite, i.e., electrons generated by the first intrinsic type quantum dot layer 1222 reach the first N type quantum dot layer 1221, and electrons generated by the second intrinsic type quantum dot layer 1232 reach the second N type quantum dot layer 1233.
In the embodiment of the disclosure, the first P-type quantum dot layer 1223 is multiplexed into the second P-type quantum dot layer 1231, so that the number of film layers in the infrared detector can be reduced, the overall volume of the infrared detector is further reduced, and the preparation flow of the infrared detector is simplified, thereby realizing the miniaturization design of the infrared detector, improving the preparation efficiency and saving the overall application cost.
In some embodiments, referring to fig. 2, the response band of the first intrinsic type quantum dot layer 1222 and the response band of the second intrinsic type quantum dot layer 1232 are any two of short wave infrared, medium wave infrared, and long wave infrared.
Illustratively, the response band of the first intrinsic-type quantum dot layer 1222 may be short-wave infrared, which includes intrinsic-type quantum dots that are short-wave quantum dots, the response band of the second intrinsic-type quantum dot layer 1232 may be medium-wave infrared, which includes intrinsic-type quantum dots that are long-wave quantum dots, or the response band of the first intrinsic-type quantum dot layer 1222 may be medium-wave infrared, and the response band of the second intrinsic-type quantum dot layer 1232 may be long-wave infrared, which may be set according to the actual detection requirements of the embodiments of the present disclosure, without limitation.
On the basis of the above implementation manners, the embodiment of the disclosure further provides an infrared detection system, which includes a power supply and any one of the infrared detectors provided in the above implementation manners.
The power supply is connected with the infrared detector and used for providing activation voltage for the infrared detector.
Specifically, if the infrared detector includes a PN junction, on the basis of the built-in electric field of the PN junction, the built-in electric field can be further enhanced by providing an activation voltage by using a power supply, so that the speed of electrons and holes which are dissociated into free electrons and holes and the transmission efficiency of the electrons and the holes are improved, the current saturation is further increased, the response speed of the infrared detector is improved, and the sensitivity is higher.
In addition, in view of the built-in electric field of PN junction, the power supply can drive the infrared detector to work only by providing smaller activation voltage, so that the power consumption of the infrared detection system is reduced.
In some embodiments, one end of the power supply is connected to the base of the infrared detector and the other end is connected to the second electrode of the infrared detector.
Specifically, the substrate and the second electrode of the infrared detector are respectively connected with a power supply, so that a loop is formed between the infrared detector and the power supply, and electrons generated by the infrared sensing layer can be received by the silicon-based readout circuit of the substrate along the loop, so that infrared band broad spectrum detection imaging is realized.
In some embodiments, fig. 5 is a schematic structural diagram of an infrared detection system according to an embodiment of the disclosure. Referring to fig. 3 to 5, the power supply includes a first power supply 210 and a second power supply 220, the first power supply 210 for providing a positive voltage and the second power supply 220 for providing a negative voltage.
The positive voltage and the negative voltage are used for expressing different connection relations between the positive electrode and the negative electrode of the power supply and the infrared detector. Illustratively, taking the orientation and structure of fig. 5 as an example, the positive electrode of the first power supply 210 is connected to the second electrode 124 of the infrared detector, the negative electrode of the first power supply 210 is connected to the substrate 110 of the infrared detector, the voltage provided by the negative electrode of the first power supply 210 can be represented as a positive voltage, the built-in electric field of the second infrared photosensitive layer 123 is consistent with the direction of the external electric field of the first power supply 210, correspondingly, the positive electrode of the second power supply 220 is connected to the substrate 110 of the infrared detector, the negative electrode of the second power supply 220 is connected to the second electrode 124 of the infrared detector, the voltage provided by the negative electrode of the second power supply 220 can be represented as a negative voltage, and the built-in electric field of the first infrared photosensitive layer 122 is consistent with the direction of the external electric field of the second power supply 220.
Further, referring to fig. 3 and 4, when the direction of the applied electric field is consistent with the direction of the built-in electric field in the first infrared photosensitive layer 122, it is equivalent to driving the infrared detector (see fig. 3) for detecting the first band to operate, thereby collecting the information of the first band, and when the direction of the applied electric field is consistent with the direction of the built-in electric field in the second infrared photosensitive layer 123, it is equivalent to driving the infrared detector (see fig. 4) for detecting the second band to operate, thereby collecting the information of the second band.
So, the infrared detectors of different wave bands are controlled to work together through the external electric fields of different directions, so that the infrared detectors provided by the embodiment of the disclosure can acquire a plurality of infrared wave band information, the detectable infrared wave band is increased, then the infrared wave band wide spectrum detection imaging is realized, and the application range of the infrared detectors is widened.
In some embodiments, with continued reference to fig. 5, the infrared detection system further includes a control module (not shown), a first switch S1, and a second switch S2, where the first switch S1 is connected between the first power source 210 and the infrared detector, the second switch S2 is connected between the second power source 220 and the infrared detector, and the first switch S1 and the second switch S2 are both connected to the control module.
The control module is used for controlling the on-off states of the first switch S1 and the second switch S2. Specifically, when the first switch S1 and the second switch S2 are controlled by the control module to be closed, the loop between the first power supply 210 and the infrared detector and the loop between the second power supply 220 and the infrared detector are turned on so as to provide the required voltage to the infrared detector, whereas when the first switch S1 and the second switch S2 are controlled by the control module to be opened, the loop between the first power supply 210 and the infrared detector and the loop between the second power supply 220 and the infrared detector are turned off, and no external electric field exists on the infrared detector.
By way of example, the control module may be a microcontroller, programmable logic controller, or other element having control functions, not limited herein.
So, through the break-make state that utilizes control module control first switch S1 and second switch S2, can provide required voltage for infrared detector in good time, need not manual operation, promoted the operation convenience.
In some embodiments, the infrared detection system further comprises a lens (not shown in the figure), and the lens is located on one side of the light incident surface of the infrared detector.
Preferably, the substrate of the infrared detector is a flexible curved substrate, and correspondingly, the lens is provided as a single lens, and it is understood that the infrared detector with the flexible curved substrate is commonly referred to as a flexible infrared focal plane detector. The preparation material of the flexible curved surface substrate can be polydimethylsiloxane, polyimide or other flexible materials, and the liquid quantum dot material can be converted into a solid functional film through a low-cost liquid phase processing technology, so that the liquid quantum dot material can be directly coupled with a silicon-based readout circuit of the flexible curved surface substrate, expensive processes such as flip-chip bonding and molecular beam epitaxy are not needed, and the material processing cost is greatly reduced.
It should be noted that when the single lens is used in combination with an infrared detector having a planar rigid substrate, the infrared detector is affected by spherical aberration of the single lens, and the phenomenon that the imaging of the infrared detector at a focal point is clear and the imaging is more blurred as the infrared detector is far away from the focal point occurs.
In this regard, when external infrared light irradiates the infrared detection system provided by the embodiment of the present disclosure, the single lens can converge external infrared light in various incident directions to a plurality of back focuses located on the infrared detector, so that clear images are formed on the plurality of back focuses. The imaging mode provided by the embodiment of the disclosure reduces the number of lenses, so that the size and weight of the infrared detection system are reduced, the preparation cost of the infrared detection system is saved, and the infrared detection system is convenient to assemble and carry.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The foregoing is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
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