CN118969835B - A silicon-based AlGaN/GaN HEMT epitaxial structure and preparation method - Google Patents
A silicon-based AlGaN/GaN HEMT epitaxial structure and preparation method Download PDFInfo
- Publication number
- CN118969835B CN118969835B CN202411426119.5A CN202411426119A CN118969835B CN 118969835 B CN118969835 B CN 118969835B CN 202411426119 A CN202411426119 A CN 202411426119A CN 118969835 B CN118969835 B CN 118969835B
- Authority
- CN
- China
- Prior art keywords
- layer
- algan
- gan
- aln
- reaction cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 230000007423 decrease Effects 0.000 claims abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 84
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 55
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 42
- 229910021529 ammonia Inorganic materials 0.000 claims description 23
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 13
- 239000005977 Ethylene Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 180
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a silicon-based AlGaN/GaN HEMT epitaxial structure and a preparation method thereof, wherein the epitaxial structure comprises a silicon substrate, an AlN buffer layer, a step AlGaN stress release layer, a GaN seed crystal laying coarsening layer, a GaN epitaxial layer, a first AlN inserting layer, a first C-doped GaN layer, a second AlN inserting layer, a second C-doped GaN layer, a third AlN inserting layer, an undoped GaN channel layer, a fourth AlN inserting layer, an AlGaN barrier layer and a GaN capacitor layer which are sequentially laminated from bottom to top, the step AlGaN stress release layer comprises a plurality of AlGaN layers with Al component mole content of 70% -20%, the Al component mole content of each AlGaN layer decreases from bottom to top, and the thickness of each AlGaN layer increases from bottom to top.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a silicon-based AlGaN/GaN HEMT epitaxial structure and a preparation method thereof.
Background
Silicon (Si) materials have a larger proportion in the semiconductor market and play a main role in the development process of semiconductor technology, but because Si materials have lower theoretical limit and cannot meet the current low-energy consumption requirement, people gradually shift the eyes to third-generation wide-bandgap semiconductor materials with high thermal conductivity, high electron saturation velocity and high breakdown field strength.
The GaN-HEMT is taken as a typical third-generation semiconductor power device, and has the advantages of high power density, high breakdown voltage and low on-resistance due to the excellent characteristics of the GaN material such as the special wide band gap, high electron saturation drift rate, high critical breakdown electric field and the like, so that the AlGaN/GaN heterojunction has the two-dimensional electron gas with high concentration and high mobility, and is widely applied to the fields of aerospace, 5G base stations and new energy automobiles.
Compared with a SiC substrate and a GaN self-supporting substrate, si-based GaN has higher cost advantage, but because the Si substrate has larger lattice mismatch and thermal mismatch coefficient between GaN, stress mismatch is gradually generated in epitaxy, a large number of dislocation groups which grow epitaxially are formed, surface anomalies such as cracks of an epitaxial layer are caused, and the electrical performance and reliability of the GaN-HEMT under the high-power density working condition are seriously hindered.
Therefore, how to effectively reduce lattice and stress mismatch through the design of an epitaxial structure, so that the crystal defects of the Si-based GaN epitaxial material are reduced, and the Si-based GaN-HEMT is key to the application in the radio frequency and power fields.
Disclosure of Invention
Aiming at the defects, the invention provides a silicon-based AlGaN/GaN HEMT epitaxial structure and a preparation method thereof, so as to reduce lattice and stress mismatch during epitaxy and reduce crystal defects of Si-based GaN epitaxial materials.
In order to solve the problems, the invention adopts a silicon-based AlGaN/GaN HEMT epitaxial structure, which comprises a silicon substrate, an AlN buffer layer, a step AlGaN stress relief layer, a GaN seed crystal laying coarsening layer, a GaN epitaxial layer, a first AlN inserting layer, a first C-doped GaN layer, a second AlN inserting layer, a second C-doped GaN layer, a third AlN inserting layer, an undoped GaN channel layer, a fourth AlN inserting layer, an AlGaN barrier layer and a GaN capacitance layer which are sequentially laminated from bottom to top;
The step AlGaN stress release layer comprises a plurality of AlGaN layers with 70% -20% of Al component molar content, the Al component molar content of each AlGaN layer gradually decreases from bottom to top, and the thickness of each AlGaN layer gradually increases from bottom to top.
Further, the step AlGaN stress relief layer comprises a high Al component AlGaN epitaxial layer, a medium Al component AlGaN epitaxial layer and a low Al component AlGaN epitaxial layer, wherein the Al component molar content in the high Al component AlGaN epitaxial layer is 50% -70%, the Al component molar content in the medium Al component AlGaN epitaxial layer is 40% -60%, the Al component molar content in the medium Al component AlGaN epitaxial layer is smaller than the Al component molar content in the high Al component AlGaN epitaxial layer, and the Al component molar content in the low Al component AlGaN epitaxial layer is 20% -30%.
Further, the thickness of the AlGaN epitaxial layer with the high Al component is 50-100nm, the thickness of the AlGaN epitaxial layer with the medium Al component is 100-200nm, and the thickness of the AlGaN epitaxial layer with the low Al component is 500-600nm.
Further, the AlN buffer layer comprises a first AlN buffer layer and a second AlN buffer layer, wherein the epitaxial thickness of the first AlN buffer layer is 10-30nm, and the epitaxial thickness of the second AlN buffer layer is 100-200nm.
The invention also provides a preparation method of the silicon-based AlGaN/GaN HEMT epitaxial structure, which comprises the following steps:
s1, placing a silicon substrate into a reaction cavity, and introducing hydrogen to passivate the high-temperature surface of the silicon substrate;
S2, stopping introducing hydrogen, introducing trimethylaluminum into the reaction cavity, and pre-paving an Al source on the surface of the silicon substrate;
S3, introducing ammonia gas into the reaction cavity, and then introducing trimethylaluminum to grow an AlN buffer layer on the silicon substrate;
S4, introducing ammonia, trimethylgallium and trimethylaluminum into the reaction cavity, and growing a step AlGaN stress release layer on the AlN buffer layer by adjusting the amount of the introduced trimethylaluminum;
s5, introducing ammonia gas and trimethylgallium into the reaction cavity, and growing a GaN seed crystal laying coarsening layer on the step AlGaN stress release layer;
s6, continuously introducing ammonia gas and trimethylgallium into the reaction cavity, and growing a GaN epitaxial layer on the GaN seed crystal bedding roughened layer;
s7, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a first AlN insert layer on the GaN epitaxial layer;
S8, introducing ammonia, trimethylgallium and ethylene into the reaction cavity, setting the growth rate to be in step growth, and growing a first C-doped GaN layer on the basis of the first AlN insert layer;
S9, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a second AlN inserting layer on the basis of the first C-doped GaN layer;
s10, introducing ammonia, trimethylgallium and ethylene into the reaction cavity, setting the growth rate to be in step growth, and growing a second C-doped GaN layer on the basis of the second AlN insertion layer;
s11, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a third AlN inserting layer on the second C-doped GaN layer;
s12, introducing ammonia gas and trimethylgallium into the reaction cavity, and growing an undoped GaN channel layer on the third AlN insertion layer;
S13, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a fourth AlN inserting layer on the undoped GaN channel layer;
S14, introducing trimethyl gallium and trimethyl aluminum into the reaction cavity, and growing an AlGaN barrier layer on the fourth AlN insertion layer;
and S15, introducing ammonia gas and trimethylgallium into the reaction cavity, and growing a GaN capacitance layer on the AlGaN barrier layer.
Further, in the step S3, the temperature of the reaction cavity is set to be 600-700 ℃ at the pressure of 100mbar to grow the first AlN buffer layer, and then the temperature of the reaction cavity is set to be 1000-1200 ℃ at the constant pressure to grow the second AlN buffer layer, wherein the growth temperature of the first AlN buffer layer is lower than that of the second AlN buffer layer.
Further, in step S4, the temperature of the reaction chamber is 1200 ℃, the pressure of the reaction chamber is 100mbar, and the amount of trimethylaluminum introduced is gradually reduced to generate a high Al component AlGaN epitaxial layer with an Al component molar content of 50% -70%, a medium Al component AlGaN epitaxial layer with an Al component molar content of 40% -60%, and a low Al component AlGaN epitaxial layer with an Al component molar content of 20% -30%.
Further, in the steps S8 and S10, the growth rate is set in three stages, the growth rate in the first stage is 0.8-1.2 μm/h, the growth rate in the second stage is 2-3 μm/h, the growth rate in the third stage is 3-5 μm/h, and the growth thickness of the first C-doped GaN layer and the second C-doped GaN layer is 0.8-1.2 μm.
Further, in steps S8 and S10, the temperature of the reaction chamber is 1100 ℃, and the pressure of the reaction chamber is 200mbar.
Further, in steps S7, S9, S11, S13, the reaction chamber temperature was 1100℃and the reaction chamber pressure was 100mbar.
Compared with the prior art, the GaN-HEMT epitaxial wafer has the advantages that (1) the design of growing an AlGaN stress release layer with gradient Al components and thickness on a Si substrate is adopted, stress generated by lattice mismatch and different thermal expansion coefficients between the Si substrate and a GaN layer is effectively released, lattice defects caused by different lattice constants of the Si substrate and the GaN layer are reduced, the probability of substrate breakage and splitting of a Si-based GaN epitaxial wafer in a high-temperature growth process is reduced, a foundation is laid for growth of a GaN layer and a two-dimensional electron gas forming layer in a nitride film structure layer, the quality of the Si-based GaN epitaxial material is finally improved, the surface flatness and appearance of the epitaxial wafer are adjusted, the obtained GaN-HEMT epitaxial wafer has a high-quality heterostructure and a high-conduction 2DEG channel, and the stress generated by the fact that the substrate is well released in a temperature rising process is achieved through growing a first AlN buffer layer on the substrate, and a nucleation site can be provided for a second AlN buffer layer at the same time, the growth rate of the second buffer layer is improved, the growth rate of the GaN-based GaN epitaxial wafer is better, and the stress release structure of the second AlN buffer layer and the first AlN layer and the AlGaN layer is better in a temperature rising process is better, and the stress release rate of the GaN layer is better, and the growth rate of the GaN layer is better released, and the growth rate is better than the growth rate doped.
Drawings
FIG. 1 is a schematic diagram of the epitaxial structure of a silicon-based AlGaN/GaN HEMT of the invention;
FIG. 2 is an XRD rocking graph of an epitaxial wafer obtained according to an embodiment of the present invention;
fig. 3 is a graph showing the doping content of epitaxial wafer C according to the embodiment of the present invention.
Detailed Description
The equipment used for epitaxial structure growth is Metal Organic Chemical Vapor Deposition (MOCVD) equipment, carrier gas of an organic metal source is hydrogen and nitrogen, the organic metal source (III group source) comprises a gallium source and an aluminum source, the carbon source is acetylene (C 2H4), the nitrogen source (V group source) is ammonia (NH 3), the gallium source is trimethylgallium (TMGa), and the aluminum source is Trimethylaluminum (TMAL).
Example 1
The silicon-based AlGaN/GaN HEMT epitaxial structure and the preparation method thereof in the embodiment comprise the following steps:
1. placing the lightly doped silicon wafer with the (111) crystal orientation on a graphite tray, then placing the graphite tray into a reaction cavity of an MOCVD system, and raising the temperature of the MOCVD reaction cavity to 1100 ℃, wherein the pressure of the reaction cavity is set to be 100 mbar, and the rotating speed of a large tray is set to be 1000r/h. And (3) introducing hydrogen, and carrying out high-temperature surface purification on the surface of the silicon substrate 1 for 300 seconds to remove oxygen impurities, and opening surface suspension bonds to fully activate the surface.
2. Stopping the hydrogen gas feeding, setting the temperature of the reaction cavity to be 900 ℃, setting the pressure of the reaction cavity to be 50mbar, feeding trimethylaluminum into the reaction cavity, and pre-paving an Al source on the surface of the silicon substrate 1 after the gas feeding time is 10 s.
3. The temperature of the reaction chamber is set to be 600 ℃, the pressure of the reaction chamber is set to be 100 mbar ℃, ammonia gas is introduced to pre-nitridize, then trimethylaluminum is introduced, the first AlN buffer layer 2 grows on the basis of the silicon substrate 1, and the epitaxial thickness is about 10nm.
4. Setting the temperature of the reaction cavity to 1000 ℃, setting the pressure of the reaction cavity to 100 mbar, continuously introducing trimethylaluminum, growing a second AlN buffer layer 3 on the basis of the first AlN buffer layer 2, and enabling the epitaxial thickness to be about 100nm.
5. And (3) raising the temperature of the reaction cavity to 1200 ℃, setting the pressure of the reaction cavity to be 100 mbar, introducing ammonia, trimethylgallium and trimethylaluminum, and growing a high Al component AlGaN stress release layer 4 with the Al molar content of about 70% on the basis of the second AlN buffer layer 3, wherein the thickness is about 50nm.
6. The temperature and the pressure of the reaction cavity are maintained unchanged, the introducing amount of trimethylaluminum is reduced, and a medium Al component AlGaN stress relief layer 5 with the Al molar content of about 60% is grown on the basis of a high Al component AlGaN stress relief layer 4, and the thickness is about 100nm.
7. The temperature and the pressure of the reaction cavity are kept unchanged, the introducing amount of trimethylaluminum is continuously reduced, and a low Al component AlGaN stress relief layer 6 with the Al molar content of about 30% is grown on the basis of a medium Al component AlGaN stress relief layer 5, and the thickness is about 500nm.
8. The temperature of the reaction cavity is reduced to 1100 ℃, the pressure of the reaction cavity is increased to 600 mbar, the rotating speed of the large disc is set to 600r/h, ammonia gas and trimethylgallium are introduced, and a GaN seed crystal laying roughening layer 7 grows on the basis of the low Al component AlGaN stress release layer 6, and the thickness is about 100nm.
9. The temperature of the reaction cavity is kept unchanged, the pressure of the reaction cavity is reduced to 200 mbar, the rotating speed of the large disc is set to 1200r/h, ammonia gas and trimethylgallium are continuously introduced, and a GaN epitaxial layer 8 grows on the basis of the GaN seed crystal laying roughened layer 7, and the thickness is about 1000nm.
10. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia and trimethylaluminum are introduced, and a first AlN insert layer 9 is grown on the basis of the GaN epitaxial layer 8, and the thickness is about 10nm.
11. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is increased to 200 mbar, ammonia, trimethylgallium and ethylene are introduced, the growth rate is divided into three stages, the growth rate of the first stage is 0.8 mu m/h, the growth rate of the second stage is 2 mu m/h, the growth rate of the third stage is 3 mu m/h, and the first C-doped GaN layer 10 is grown on the basis of the first AlN insert layer 9, and the thickness is about 0.8 mu m.
12. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia gas and trimethylaluminum are introduced, and a second AlN insert layer 11 is grown on the basis of the first C-doped GaN layer 10, and the thickness is about 10nm.
13. The reaction chamber temperature was kept unchanged, the reaction chamber pressure was raised to 200 mbar, ammonia gas, trimethylgallium, ethylene were introduced, and the growth rate was set in three stages, the first stage growth rate was 0.8 μm/h, the second stage growth rate was 2 μm/h, the third stage growth rate was 3 μm/h, and the second C-doped GaN layer 12 was grown on the basis of the second AlN-inserted layer 11 to a thickness of about 0.8 μm.
14. And (3) keeping the temperature of the reaction cavity unchanged, reducing the pressure of the reaction cavity to 100 mbar, introducing ammonia and trimethylaluminum, and growing a third AlN insert layer 13 on the second C-doped GaN layer 12 to a thickness of about 10nm.
15. And (3) keeping the temperature of the reaction cavity unchanged, increasing the pressure of the reaction cavity to 200 mbar, stopping introducing ethylene, continuing introducing ammonia gas and trimethylgallium, and growing an undoped GaN channel layer 14 on the third AlN inserting layer 13, wherein the thickness is about 300nm.
16. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia gas and trimethylaluminum are introduced, and a fourth AlN insert layer 15 is grown on the undoped GaN channel layer 14, and the thickness is about 10nm.
17. The temperature of the reaction chamber was reduced to 1000 ℃, the pressure of the reaction chamber was maintained at 100 mbar, trimethylgallium and trimethylaluminum were introduced, and an AlGaN barrier layer 16 having an Al content of about 20% was grown on the fourth AlN interlayer 15, and the thickness was about 20nm.
18. The temperature of the reaction chamber is raised to 1100 ℃, the pressure of the reaction chamber is raised to 150 mbar ℃, ammonia gas and trimethylgallium are introduced, and a GaN capacitance layer 17 is grown on the AlGaN barrier layer 16, and the thickness is about 2nm.
Finally, an epitaxial structure as shown in fig. 1 is produced.
Example 2
The silicon-based AlGaN/GaN HEMT epitaxial structure and the preparation method thereof in the embodiment comprise the following steps:
1. placing the lightly doped silicon wafer with the (111) crystal orientation on a graphite tray, then placing the graphite tray into a reaction cavity of an MOCVD system, and raising the temperature of the MOCVD reaction cavity to 1200 ℃, wherein the pressure of the reaction cavity is set to 150 mbar, and the rotating speed of a large tray is set to 1100r/h. And (3) introducing hydrogen, and carrying out high-temperature surface purification on the surface of the silicon substrate 1 for 400 seconds to remove oxygen impurities, and opening surface suspension bonds to fully activate the surface.
2. Stopping the hydrogen gas feeding, setting the temperature of the reaction cavity to be 950 ℃, setting the pressure of the reaction cavity to be 75mbar, feeding trimethylaluminum into the reaction cavity, and pre-paving an Al source on the surface of the silicon substrate 1 after the gas feeding time is 20 s.
3. The temperature of the reaction chamber is set to 650 ℃, the pressure of the reaction chamber is set to 100 mbar ℃, ammonia gas is introduced to pre-nitridize, then trimethylaluminum is introduced, the first AlN buffer layer 2 grows on the basis of the silicon substrate 1, and the epitaxial thickness is about 20nm.
4. Setting the temperature of the reaction cavity to 1100 ℃, setting the pressure of the reaction cavity to 100 mbar, continuing to introduce trimethylaluminum, growing a second AlN buffer layer 3 on the basis of the first AlN buffer layer 2, and enabling the epitaxial thickness to be about 150nm.
5. And (3) raising the temperature of the reaction cavity to 1200 ℃, setting the pressure of the reaction cavity to be 100 mbar, introducing ammonia, trimethylgallium and trimethylaluminum, and growing a high Al component AlGaN stress release layer 4 with the Al molar content of about 60% on the basis of the second AlN buffer layer 3, wherein the thickness is about 75nm.
6. The temperature and the pressure of the reaction cavity are kept unchanged, the introducing amount of trimethylaluminum is reduced, and a medium Al component AlGaN stress relief layer 5 with the Al molar content of about 50% is grown on the basis of a high Al component AlGaN stress relief layer 4, and the thickness is about 150nm.
7. The temperature and the pressure of the reaction cavity are kept unchanged, the introducing amount of trimethylaluminum is continuously reduced, and a low Al component AlGaN stress relief layer 6 with the Al molar content of about 25% is grown on the basis of a medium Al component AlGaN stress relief layer 5, and the thickness is about 550nm.
8. The temperature of the reaction cavity is reduced to 1100 ℃, the pressure of the reaction cavity is increased to 600 mbar, the rotating speed of the large disc is set to 600r/h, ammonia gas and trimethylgallium are introduced, a GaN seed crystal laying coarsening layer 7 grows on the basis of the AlGaN stress release layer 6 with low Al component, and the thickness is about 150nm.
9. The temperature of the reaction cavity is kept unchanged, the pressure of the reaction cavity is reduced to 200 mbar, the rotating speed of the large disc is set to 1200r/h, ammonia gas and trimethylgallium are continuously introduced, and a GaN epitaxial layer 8 grows on the basis of the GaN seed crystal laying roughened layer 7, and the thickness is about 1300nm.
10. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia and trimethylaluminum are introduced, and a first AlN insert layer 9 is grown on the basis of the GaN epitaxial layer 8, and the thickness is about 10nm.
11. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is increased to 200 mbar, ammonia, trimethylgallium and ethylene are introduced, the growth rate is divided into three stages, the growth rate in the first stage is 1 mu m/h, the growth rate in the second stage is 2.5 mu m/h, the growth rate in the third stage is 4 mu m/h, and the first C-doped GaN layer 10 is grown on the basis of the first AlN insert layer 9, and the thickness is about 1 mu m.
12. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia gas and trimethylaluminum are introduced, and a second AlN insert layer 11 is grown on the basis of the first C-doped GaN layer 10, and the thickness is about 10nm.
13. The reaction chamber temperature was kept unchanged, the reaction chamber pressure was raised to 200 mbar, ammonia, trimethylgallium, ethylene were introduced, and the growth rate was set in three stages, the first stage growth rate was 1 μm/h, the second stage growth rate was 2.5 μm/h, and the third stage growth rate was 4 μm/h, and the second C-doped GaN layer 12 was grown on the basis of the second AlN-inserted layer 11 to a thickness of about 1 μm.
14. And (3) keeping the temperature of the reaction cavity unchanged, reducing the pressure of the reaction cavity to 100 mbar, introducing ammonia and trimethylaluminum, and growing a third AlN insert layer 13 on the second C-doped GaN layer 12 to a thickness of about 15nm.
15. And (3) keeping the temperature of the reaction cavity unchanged, increasing the pressure of the reaction cavity to 200 mbar, stopping introducing ethylene, continuing introducing ammonia and trimethyl gallium, and growing an undoped GaN channel layer 14 on the third AlN inserting layer 13, wherein the thickness is about 350nm.
16. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia gas and trimethylaluminum are introduced, and a fourth AlN insert layer 15 is grown on the undoped GaN channel layer 14, and the thickness is about 15nm.
17. The temperature of the reaction chamber was reduced to 1000 ℃, the pressure of the reaction chamber was maintained at 100 mbar, trimethylgallium and trimethylaluminum were introduced, and an AlGaN barrier layer 16 having an Al content of about 20% was grown on the fourth AlN interlayer 15, and the thickness was about 25nm.
18. The temperature of the reaction chamber is raised to 1100 ℃, the pressure of the reaction chamber is raised to 200 mbar ℃, ammonia gas and trimethylgallium are introduced, and a GaN capacitance layer 17 is grown on the AlGaN barrier layer 16, and the thickness is about 2.5nm.
Example 3
The silicon-based AlGaN/GaN HEMT epitaxial structure and the preparation method thereof in the embodiment comprise the following steps:
1. Placing the lightly doped silicon wafer with the (111) crystal orientation on a graphite tray, then placing the graphite tray into a reaction cavity of an MOCVD system, and raising the temperature of the MOCVD reaction cavity to 1300 ℃, wherein the pressure of the reaction cavity is set to be 200 mbar, and the rotating speed of a large tray is set to be 1200r/h. And (3) introducing hydrogen, and carrying out high-temperature surface purification on the surface of the silicon substrate 1 for 500 seconds to remove oxygen impurities, and opening surface suspension bonds to fully activate the surface.
2. Stopping the hydrogen gas feeding, setting the temperature of the reaction cavity to be 1000 ℃, setting the pressure of the reaction cavity to be 100mbar, feeding trimethylaluminum into the reaction cavity, and pre-paving an Al source on the surface of the silicon substrate 1 after the gas feeding time is 30 s.
3. The temperature of the reaction chamber is set to be 700 ℃, the pressure of the reaction chamber is set to be 100 mbar ℃, ammonia gas is introduced to pre-nitridize, then trimethylaluminum is introduced, the first AlN buffer layer 2 grows on the basis of the silicon substrate 1, and the epitaxial thickness is about 30nm.
4. The temperature of the reaction cavity is set to 1200 ℃, the pressure of the reaction cavity is set to 100 mbar ℃, trimethylaluminum is continuously introduced, the second AlN buffer layer 3 grows on the basis of the first AlN buffer layer 2, and the epitaxial thickness is about 200nm.
5. And (3) raising the temperature of the reaction cavity to 1200 ℃, setting the pressure of the reaction cavity to be 100 mbar, introducing ammonia, trimethylgallium and trimethylaluminum, and growing a high Al component AlGaN stress release layer 4 with the Al molar content of about 50% on the basis of the second AlN buffer layer 3, wherein the thickness is about 100nm.
6. The temperature and the pressure of the reaction cavity are kept unchanged, the introducing amount of trimethylaluminum is reduced, and a medium Al component AlGaN stress relief layer 5 with the Al molar content of about 40% is grown on the basis of a high Al component AlGaN stress relief layer 4, and the thickness is about 200nm.
7. The temperature and the pressure of the reaction cavity are kept unchanged, the introducing amount of trimethylaluminum is continuously reduced, and a low Al component AlGaN stress relief layer 6 with the Al molar content of about 20% is grown on the basis of a medium Al component AlGaN stress relief layer 5, and the thickness is about 600nm.
8. The temperature of the reaction cavity is reduced to 1100 ℃, the pressure of the reaction cavity is increased to 600 mbar, the rotating speed of the large disc is set to 600r/h, ammonia gas and trimethylgallium are introduced, and a GaN seed crystal laying roughening layer 7 grows on the basis of the low Al component AlGaN stress release layer 6, and the thickness is about 200nm.
9. The temperature of the reaction cavity is kept unchanged, the pressure of the reaction cavity is reduced to 200 mbar, the rotating speed of the large disc is set to 1200r/h, ammonia gas and trimethylgallium are continuously introduced, and a GaN epitaxial layer 8 grows on the basis of the GaN seed crystal laying roughened layer 7, and the thickness is about 1500nm.
10. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia and trimethylaluminum are introduced, and a first AlN insert layer 9 is grown on the basis of the GaN epitaxial layer 8, and the thickness is about 10nm.
11. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is increased to 200 mbar, ammonia, trimethylgallium and ethylene are introduced, the growth rate is divided into three stages, the growth rate of the first stage is 1.2 mu m/h, the growth rate of the second stage is 3 mu m/h, the growth rate of the third stage is 5 mu m/h, and the first C-doped GaN layer 10 is grown on the basis of the first AlN insert layer 9, and the thickness is about 1.2 mu m.
12. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia gas and trimethylaluminum are introduced, and a second AlN insert layer 11 is grown on the basis of the first C-doped GaN layer 10, and the thickness is about 10nm.
13. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is increased to 200 mbar, ammonia, trimethylgallium and ethylene are introduced, the growth rate is divided into three stages, the growth rate in the first stage is 1.2 mu m/h, the growth rate in the second stage is 3 mu m/h, the growth rate in the third stage is 5 mu m/h, and a second C-doped GaN layer 12 is grown on the basis of the second AlN insert layer 11, and the thickness is about 1.2 mu m.
14. And (3) keeping the temperature of the reaction cavity unchanged, reducing the pressure of the reaction cavity to 100 mbar, introducing ammonia and trimethylaluminum, and growing a third AlN insert layer 13 on the second C-doped GaN layer 12, wherein the thickness is about 20nm.
15. And (3) keeping the temperature of the reaction cavity unchanged, increasing the pressure of the reaction cavity to 200 mbar, stopping introducing ethylene, continuing introducing ammonia gas and trimethylgallium, and growing an undoped GaN channel layer 14 on the third AlN inserting layer 13, wherein the thickness is about 400nm.
16. The temperature of the reaction chamber is kept unchanged, the pressure of the reaction chamber is reduced to 100 mbar, ammonia gas and trimethylaluminum are introduced, and a fourth AlN insert layer 15 is grown on the undoped GaN channel layer 14, and the thickness is about 20nm.
17. The temperature of the reaction chamber was reduced to 1000 ℃, the pressure of the reaction chamber was maintained at 100 mbar, trimethylgallium and trimethylaluminum were introduced, and an AlGaN barrier layer 16 having an Al content of about 20% was grown on the fourth AlN interlayer 15 to a thickness of about 30nm.
18. The temperature of the reaction chamber is raised to 1100 ℃, the pressure of the reaction chamber is raised to 300 mbar ℃, ammonia gas and trimethylgallium are introduced, and a GaN capacitance layer 17 is grown on the AlGaN barrier layer 16, and the thickness is about 3nm.
Referring to fig. 2, three colors of red, green and blue correspond to XRD rocking curves of the Si-based GaN-HEMT epitaxial wafer obtained in examples 1, 2 and 3, respectively, and the peaks of the obtained XRD patterns GaN and AlGaN are sharp and clear. The test results of the epitaxial structure prepared by the three embodiments have no obvious difference.
Referring to FIG. 3, the C-GaN epitaxial layer has a C doping concentration between 1E18 and 1E19 (at/cm 3).
For the Si-based GaN-HEMT epitaxial wafer obtained in the embodiment 1 of the invention, the electron mobility, the surface density and the square resistance of AlGaN/GaN heterojunction two-dimensional electron gas 2DEG (two-dimensional electron gas) are respectively 2200 cm < 2 >/V.s, 9 multiplied by 10 < -12 >/cm < 2 >, 400 omega/≡s, and the Si-based GaN-HEMT epitaxial wafer has a high-quality heterostructure and a high-conduction 2DEG channel.
In summary, the design of growing the AlGaN stress release layer with gradually changed Al components and thickness steps on the Si substrate is adopted, so that stress generated by lattice mismatch and different thermal expansion coefficients between the Si substrate and the GaN layer is effectively released, lattice defects caused by different lattice constants between the Si substrate and the GaN layer are reduced, the probability of substrate breakage and cracking of the Si-based GaN epitaxial wafer in the high-temperature growth process is reduced, a foundation is laid for growth of the GaN layer and the AlGaN two-dimensional electron gas forming layer in the nitride film structure layer, the purposes of improving the quality of the Si-based GaN epitaxial material and adjusting the surface flatness and appearance of the epitaxial wafer are finally achieved, and the obtained GaN-HEMT epitaxial wafer has a heterostructure with high quality and a high-conduction 2DEG channel.
Claims (9)
1. The silicon-based AlGaN/GaN HEMT epitaxial structure is characterized by comprising a silicon substrate, an AlN buffer layer, a stepped AlGaN stress release layer, a GaN seed crystal laying coarsening layer (7), a GaN epitaxial layer (8), a first AlN inserting layer (9), a first C-doped GaN layer (10), a second AlN inserting layer (11), a second C-doped GaN layer (12), a third AlN inserting layer (13), an undoped GaN channel layer (14), a fourth AlN inserting layer (15), an AlGaN barrier layer (16) and a GaN capacitance layer (17) which are sequentially laminated from bottom to top, wherein the growth thickness of the first C-doped GaN layer (10) and the second C-doped GaN layer (12) is 0.8-1.2 mu m;
The step AlGaN stress relief layer comprises a plurality of AlGaN layers with 70% -20% of Al component molar content, the Al component molar content of each AlGaN layer gradually decreases from bottom to top, the thickness of each AlGaN layer gradually increases from bottom to top, the step AlGaN stress relief layer comprises a high Al component AlGaN epitaxial layer (4), a medium Al component AlGaN epitaxial layer (5) and a low Al component AlGaN epitaxial layer (6), the thickness of the high Al component AlGaN epitaxial layer (4) is 50-100nm, the thickness of the medium Al component AlGaN epitaxial layer (5) is 100-200nm, and the thickness of the low Al component AlGaN epitaxial layer (6) is 500-600nm.
2. The silicon-based AlGaN/GaN HEMT epitaxial structure according to claim 1, wherein the Al composition molar content in said high Al composition AlGaN epitaxial layer (4) is 50% -70%, the Al composition molar content in said medium Al composition AlGaN epitaxial layer (5) is 40% -60%, and the Al composition molar content in said medium Al composition AlGaN epitaxial layer (5) is smaller than the Al composition molar content in said high Al composition AlGaN epitaxial layer (4), and the Al composition molar content in said low Al composition AlGaN epitaxial layer (6) is 20% -30%.
3. The silicon-based AlGaN/GaN HEMT epitaxial structure according to claim 1, wherein said AlN buffer layer comprises a first AlN buffer layer (2) and a second AlN buffer layer (3), said first AlN buffer layer (2) having an epitaxial thickness of 10-30nm and said second AlN buffer layer (3) having an epitaxial thickness of 100-200nm.
4. A method of fabricating a silicon-based AlGaN/GaN HEMT epitaxial structure according to any one of claims 1 to 3, comprising the steps of:
s1, placing a silicon substrate into a reaction cavity, and introducing hydrogen to passivate the high-temperature surface of the silicon substrate;
S2, stopping introducing hydrogen, introducing trimethylaluminum into the reaction cavity, and pre-paving an Al source on the surface of the silicon substrate;
S3, introducing ammonia gas into the reaction cavity, and then introducing trimethylaluminum to grow an AlN buffer layer on the silicon substrate;
S4, introducing ammonia, trimethylgallium and trimethylaluminum into the reaction cavity, and growing a step AlGaN stress release layer on the AlN buffer layer by adjusting the amount of the introduced trimethylaluminum;
s5, introducing ammonia gas and trimethylgallium into the reaction cavity, and growing a GaN seed crystal laying coarsening layer (7) on the step AlGaN stress release layer;
s6, continuously introducing ammonia gas and trimethylgallium into the reaction cavity, and growing a GaN epitaxial layer (8) on the GaN seed crystal bedding roughened layer (7);
S7, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a first AlN inserting layer (9) on the GaN epitaxial layer (8);
S8, introducing ammonia, trimethylgallium and ethylene into the reaction cavity, setting the growth rate to be in step growth, and growing a first C-doped GaN layer (10) on the basis of the first AlN insert layer (9);
S9, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a second AlN inserting layer (11) on the basis of the first C-doped GaN layer (10);
s10, introducing ammonia, trimethylgallium and ethylene into the reaction cavity, setting the growth rate to be in step growth, and growing a second C-doped GaN layer (12) on the basis of the second AlN insert layer (11);
s11, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a third AlN inserting layer (13) on the second C-doped GaN layer (12);
S12, introducing ammonia gas and trimethylgallium into the reaction cavity, and growing an undoped GaN channel layer (14) on the third AlN inserting layer (13);
s13, introducing ammonia gas and trimethylaluminum into the reaction cavity, and growing a fourth AlN inserting layer (15) on the undoped GaN channel layer (14);
S14, introducing trimethyl gallium and trimethyl aluminum into the reaction cavity, and growing an AlGaN barrier layer (16) on the fourth AlN insertion layer (15);
And S15, introducing ammonia and trimethylgallium into the reaction cavity, and growing a GaN capacitance layer (17) on the AlGaN barrier layer (16).
5. The method according to claim 4, wherein in step S3, the temperature of the reaction chamber is set to 600-700 ℃ and the pressure of the reaction chamber is set to 100mbar to grow the first AlN buffer layer (2), the temperature of the reaction chamber is set to 1000-1200 ℃ and the pressure of the reaction chamber is unchanged to grow the second AlN buffer layer (3), and the growth temperature of the first AlN buffer layer (2) is lower than that of the second AlN buffer layer (3).
6. The preparation method according to claim 4, wherein in the step S4, the temperature of the reaction chamber is 1200 ℃, the pressure of the reaction chamber is 100mbar, and the amount of trimethylaluminum introduced is gradually reduced to produce a high Al composition AlGaN epitaxial layer (4) having an Al composition molar content of 50% -70%, a medium Al composition AlGaN epitaxial layer (5) having an Al composition molar content of 40% -60%, and a low Al composition AlGaN epitaxial layer (6) having an Al composition molar content of 20% -30%.
7. The method according to claim 4, wherein in the steps S8 and S10, the growth rate is set in three stages, the first stage growth rate is 0.8 to 1.2 μm/h, the second stage growth rate is 2 to 3 μm/h, and the third stage growth rate is 3 to 5 μm/h.
8. The process according to claim 4, wherein in the steps S8 and S10, the reaction chamber temperature is 1100℃and the reaction chamber pressure is 200mbar.
9. The process according to claim 4, wherein in the steps S7, S9, S11 and S13, the reaction chamber temperature is 1100℃and the reaction chamber pressure is 100mbar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411426119.5A CN118969835B (en) | 2024-10-14 | 2024-10-14 | A silicon-based AlGaN/GaN HEMT epitaxial structure and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411426119.5A CN118969835B (en) | 2024-10-14 | 2024-10-14 | A silicon-based AlGaN/GaN HEMT epitaxial structure and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118969835A CN118969835A (en) | 2024-11-15 |
| CN118969835B true CN118969835B (en) | 2025-03-18 |
Family
ID=93404048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411426119.5A Active CN118969835B (en) | 2024-10-14 | 2024-10-14 | A silicon-based AlGaN/GaN HEMT epitaxial structure and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118969835B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115142126A (en) * | 2022-06-30 | 2022-10-04 | 江苏第三代半导体研究院有限公司 | Preparation method of low background concentration gallium nitride epitaxial structure and epitaxial structure thereof |
| CN117334735A (en) * | 2023-09-28 | 2024-01-02 | 南京国盛电子有限公司 | Si-based GaN-HEMT structure epitaxial wafer and preparation method thereof |
| CN117497562A (en) * | 2023-10-26 | 2024-02-02 | 中山市华南理工大学现代产业技术研究院 | A silicon-based GaN epitaxial structure with a stepped barrier layer and its preparation method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088426A (en) * | 2005-08-25 | 2007-04-05 | Furukawa Electric Co Ltd:The | Semiconductor electronic device |
| US8946775B2 (en) * | 2012-08-22 | 2015-02-03 | Industrial Technology Research Institute | Nitride semiconductor structure |
| TWI546959B (en) * | 2015-01-21 | 2016-08-21 | 國立交通大學 | High speed transistor |
| JP2017163050A (en) * | 2016-03-10 | 2017-09-14 | 株式会社東芝 | Semiconductor device |
| CN114093990B (en) * | 2022-01-18 | 2022-06-03 | 季华实验室 | Ultraviolet LED vertical chip epitaxial structure and preparation method thereof |
| CN115799407A (en) * | 2022-11-30 | 2023-03-14 | 福建兆元光电有限公司 | GaN-based epitaxial layer growth method for reducing working voltage of LED chip |
-
2024
- 2024-10-14 CN CN202411426119.5A patent/CN118969835B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115142126A (en) * | 2022-06-30 | 2022-10-04 | 江苏第三代半导体研究院有限公司 | Preparation method of low background concentration gallium nitride epitaxial structure and epitaxial structure thereof |
| CN117334735A (en) * | 2023-09-28 | 2024-01-02 | 南京国盛电子有限公司 | Si-based GaN-HEMT structure epitaxial wafer and preparation method thereof |
| CN117497562A (en) * | 2023-10-26 | 2024-02-02 | 中山市华南理工大学现代产业技术研究院 | A silicon-based GaN epitaxial structure with a stepped barrier layer and its preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118969835A (en) | 2024-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9691712B2 (en) | Method of controlling stress in group-III nitride films deposited on substrates | |
| KR100690413B1 (en) | Nitride Semiconductor Growth Substrate | |
| EP4207247A1 (en) | Nitride epitaxial structure and semiconductor device | |
| CN108400159B (en) | HEMT epitaxial structure with multi-quantum well high-resistance buffer layer and preparation method | |
| CN218039219U (en) | Epitaxial structure of high-mobility transistor | |
| CN115842042B (en) | Epitaxial layer structure and preparation method and application thereof | |
| CN107068750A (en) | A kind of GaN base high pressure HEMT device epitaxial structure and its manufacture method based on Si substrates | |
| CN118969835B (en) | A silicon-based AlGaN/GaN HEMT epitaxial structure and preparation method | |
| CN116646248B (en) | Epitaxial wafer preparation method, epitaxial wafer thereof and high-electron mobility transistor | |
| CN110797394B (en) | Epitaxial structure and preparation method of high electron mobility transistor | |
| CN116682910B (en) | A gallium nitride epitaxial wafer structure and its preparation method | |
| CN112750691A (en) | Nitrogen polar surface GaN material and homoepitaxial growth method | |
| KR20150000753A (en) | Nitride semiconductor and method thereof | |
| CN114220729B (en) | Preparation method for improving the quality of high electron mobility transistor epitaxial wafer | |
| CN117497562A (en) | A silicon-based GaN epitaxial structure with a stepped barrier layer and its preparation method | |
| CN117334735A (en) | Si-based GaN-HEMT structure epitaxial wafer and preparation method thereof | |
| CN115719758A (en) | High-uniformity gallium nitride heterojunction material structure and epitaxial growth method | |
| JP3987360B2 (en) | Epitaxial substrate, epitaxial substrate for electronic device, and electronic device | |
| CN113539786B (en) | Silicon-based gallium nitride epitaxial structure and preparation method thereof | |
| CN109994545B (en) | HEMT epitaxial structure and preparation method thereof | |
| CN114855273A (en) | Epitaxial wafer preparation method, epitaxial wafer and light emitting diode | |
| CN110957354A (en) | Silicon heavily-doped gallium nitride heteroepitaxy material structure and stress control method | |
| CN116936631B (en) | Epitaxial structure and preparation method of gallium nitride-based transistor | |
| JP2006351870A (en) | Semiconductor epitaxial wafer | |
| CN221239616U (en) | Gallium nitride material epitaxial structure based on silicon substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |