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CN118944646B - A driving circuit and method - Google Patents

A driving circuit and method Download PDF

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Publication number
CN118944646B
CN118944646B CN202411425752.2A CN202411425752A CN118944646B CN 118944646 B CN118944646 B CN 118944646B CN 202411425752 A CN202411425752 A CN 202411425752A CN 118944646 B CN118944646 B CN 118944646B
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voltage
resistor
switch tube
pulse
driving
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CN118944646A (en
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白洪超
严纪志
许可
陈帅先
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Shandong Ainuo Intelligent Instrument Co ltd
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Shandong Ainuo Intelligent Instrument Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

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Abstract

The invention discloses a novel driving circuit and a novel driving method, wherein the novel driving circuit comprises resistors R1, R2 and R3, a capacitor C1, a magnetic bead L1, switching tubes Q1 and Q2, voltage stabilizing diodes T1 and T2 and a power switching tube Q3, VIN is a pulse input end, and VON is a pulse width output end. When VIN inputs positive pulse drive, the power switch tube Q3 is turned on, when the positive pulse drive is turned off, the pulse width is utilized to maintain Q3 drive, when VIN inputs negative pulse, the switch tube is turned off, and when the negative pulse drive is turned off, continuous negative pressure turn-off is realized. The invention can convert pulse driving into pulse width driving, apply the accuracy conversion of pulse triggering to level triggering, improve the control accuracy and have the capability of quick on-off.

Description

Driving circuit and method
Technical Field
The invention relates to the field of switch tube driving, in particular to an online EIS accurate measurement system and method for a lithium ion battery.
Background
With the continuous development of high-power density power supplies, a switching tube is used as an important control device for electric energy conversion, and the failure of the switching tube causes more than 90% of total failures, wherein the direct damage caused by the abnormality of a driving circuit of the switching tube accounts for more than 30% of the failure rate, and a reliable driving circuit is important for the operation of the switching tube in a safe working area.
To the power supply of high power density in the switching tube receive drive circuit work unusual, lead to the switching tube to damage and influence the normal work of power, this patent provides a novel switching tube drive circuit and design method thereof.
Disclosure of Invention
The invention aims to provide a driving circuit which has the capability of quick on-off, can convert pulse driving into pulse width driving, can convert the accuracy of pulse triggering into level triggering, and can improve the control accuracy.
The invention aims to achieve the aim, and the aim is achieved by the following technical scheme:
a driving circuit comprises a driving loop and a pulse loop, wherein the driving loop comprises a power switch tube Q3;
The pulse loop comprises a resistor R1, a resistor R2, a capacitor C1, a switching tube Q1, a body diode D1, a switching tube Q2, a body diode D2, a voltage stabilizing diode T1 and a voltage stabilizing diode T2, wherein one end of the resistor R1 is connected with a negative phase end of a pulse input end VIN, the other end of the resistor R1 is connected with one end of the capacitor C1, the other end of the C1 is connected with a positive phase end of the pulse input end VIN, a source electrode of the switching tube Q1 is connected with a positive phase end of the pulse input end VIN, a grid electrode is connected with an anode of the voltage stabilizing diode T1, a drain electrode is connected with a cathode of the voltage stabilizing diode T2, the diode D1 is a parasitic diode connected in parallel between a drain electrode of the switching tube Q1 and a source electrode, the anode of the D1 is connected with a source electrode of the switching tube Q1, the cathode of the D1 is connected with a drain electrode of the switching tube Q1, the cathode of the switching tube T1 is connected with a negative phase end of the pulse input end VIN, the drain electrode of the switching tube Q2 is connected with a cathode of the voltage stabilizing diode T2, the drain electrode of the parasitic diode is connected with the drain electrode of the parasitic diode T2, and the drain electrode of the parasitic diode is connected with the drain electrode of the parasitic diode T2 is connected with the drain electrode of the parasitic diode Q2, and the drain electrode of the parasitic diode is connected with the drain electrode of the parasitic diode Q2, and the parasitic diode Q2 is connected with the drain electrode of the drain 2.
Further, the driving circuit comprises a resistor R2, a resistor R3, a magnetic bead L1, a power switch tube Q3 and a body diode D3 thereof, wherein the upper end of the resistor R2 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with one end of the magnetic bead L1, the other end of the resistor L1 is connected with the grid electrode of the power switch tube Q3, and the source electrode of the power switch tube Q3 is connected with the lower end of the resistor R2.
Further, the resistor R3 is a driving resistor of the power switch Q3, and the type selection range is as follows:
the value range of the magnetic bead L1 is 10-100 nH, and Cgs is the gate-source capacitance of the power switch tube Q3;
The resistor R2 is a pull-down driving resistor of the power switch tube Q3, and the value range is 10-100 kΩ.
Further, the type selection range of the capacitor C1 is as follows:
where W is the energy of the single pulse driving, U is the driving voltage, ciss is the input capacitance of the power switch Q3.
Further, the resistor R1 is selected from the following types:
Wherein the method comprises the steps of For a single pulse of the drive time,Is the positive pulse width time.
Further, the switching transistors Q1 and Q2 are NMOS transistors, and the regulated voltages of the regulated diodes T1 and T2 are smaller than the input driving voltage VIN.
Further, the types of the zener diodes T1 and T2 are as follows:
wherein VT is the regulated voltage of the zener diode T1 or T2, VQ is the driving voltage of the switching transistor Q1 or Q2, and U is the input driving voltage value of VIN.
In the driving method of the driving circuit, when VIN inputs positive pulse driving, positive pulse charges a capacitor C1 through a resistor R1, a body diode D1 of a switching tube Q1 is positively conducted, the switching tube Q1 is turned off, a voltage stabilizing diode T2 is reversely conducted and stabilized, the switching tube Q2 is positively conducted, and VIN input voltage is applied to two ends of the resistor R2 for positive voltage driving;
When VIN is changed into negative pulse, the negative pulse reversely charges the capacitor C1 through the resistor R1, the voltage stabilizing diode T1 is subjected to negative pressure reverse conduction and voltage stabilization, the positive voltage of the switching tube Q1 is conducted, the cathode of the voltage stabilizing diode T2 is connected with the negative end of the input voltage VIN and subjected to reverse negative pressure, the voltage cannot reach reverse breakdown voltage and is turned off, meanwhile, the driving voltage of the switching tube Q2 disappears, the Q2 is turned off, the body diode D2 of the Q2 is subjected to positive voltage and is conducted, the resistor R2 is connected with the input voltage VIN in parallel, and negative pulse is applied to the power switching tube Q3, so that the switching tube is turned off.
Further, when VIN positive pulse drive is turned off, the switching tube Q1 is kept turned off, the body diode D1 is turned on, the forward voltage on the capacitor C1 is applied to the zener diode T2 through the D1, the gate of the switching tube Q2 is still subjected to positive voltage conduction, the capacitor C1 is discharged through the D1, R2, Q2 and R1, the resistor R1 and the resistor R2 are serially connected to divide the voltage at two ends of the capacitor C1, and when the voltage at two ends of the resistor R2 is higher than the driving voltage of the power switching tube Q3, Q3 is kept on, so that the effect of pulse width drive is achieved, and the conversion from pulse drive to pulse width drive is realized;
When VIN negative pulse drive is disconnected, negative voltage on the capacitor C1 is continuously applied to the voltage stabilizing diode T1 through the resistor R1, T1 is continuously subjected to reverse breakdown voltage stabilization, the grid electrode of the switching tube Q1 is still subjected to positive voltage conduction, the voltage stabilizing diode T2 and the switching tube Q2 are still in an off state, the Q2 body diode D2 is still conducted, the capacitor C1 is discharged through the resistor R1, the resistor D2, the resistor R2 and the capacitor Q1, voltage at two ends of the capacitor C1 is divided in series, and negative voltage at two ends of the resistor R2 is applied to the power switching tube Q3, so that continuous negative voltage is realized and the switching tube is turned off.
The invention has the advantages that:
The working state of the load equipment can be very accurately controlled by adjusting the pulse width, and the duty ratio can be dynamically adjusted to enable the system to be controlled more flexibly and respond to external changes rapidly, so that different application requirements are met;
the circuit is relatively simple, easy to design and implement, helps to reduce system cost, can reduce energy loss, especially in applications requiring frequent output power adjustment,
The driving circuit is in a complete on or complete off state in most of the time, so that the power loss is reduced, and the overall efficiency is improved;
In summary, the driving circuit capable of driving pulse control and pulse width adjustment of duty ratio has the advantages of simple circuit structure, high reliability, pulse control precision and pulse width control of duty ratio adjustment function, and wide popularization and application prospect.
Drawings
FIG. 1 is a driving circuit of an embodiment 1 of the present invention;
FIG. 2 is a schematic diagram of the positive pulse driving operation of embodiment 2 of the present invention;
FIG. 3 is a schematic diagram showing the operation of the positive pulse extinction in example 2 of the present invention;
FIG. 4 is a diagram showing the negative pulse off operation state according to embodiment 2 of the present invention;
Fig. 5 is a schematic diagram of the operation of the present invention after the negative pulse of example 2 is eliminated.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1
Referring to fig. 1, the driving circuit includes a driving circuit and a pulse circuit, the driving circuit includes a resistor R2, a resistor R3, a magnetic bead L1, a power switch Q3 and a body diode D3 thereof, the upper end of the resistor R2 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with one end of the magnetic bead L1, the other end of the resistor L1 is connected with a gate of the power switch Q3, and a source of the power switch Q3 is connected with the lower end of the resistor R2.
The pulse loop comprises a resistor R1, a resistor R2, a capacitor C1, a switching tube Q1, a body diode D1 thereof, a switching tube Q2, a body diode D2 thereof, a voltage stabilizing diode T1 and a voltage stabilizing diode T2, wherein one end of the resistor R1 is connected with the negative phase end of a pulse input end VIN, the other end of the resistor R1 is connected with one end of the capacitor C1, the other end of the C1 is connected with the positive phase end of the pulse input end VIN, the source electrode of the switching tube Q1 is connected with the positive phase end of the pulse input end VIN, the grid electrode is connected with the anode of the voltage stabilizing diode T1, the drain electrode is connected with the cathode of the voltage stabilizing diode T2, the diode D1 is a parasitic diode connected in parallel between the drain electrode and the source electrode of the switching tube Q1, the anode of the diode D1 is connected with the source electrode of the switching tube Q1, the cathode of the diode D1 is connected with the drain electrode of the switching tube Q1, the cathode of the diode T1 is connected with the negative phase end of the pulse input end VIN, the source electrode of the switching tube Q2 is connected with the cathode of the diode T1, the drain electrode is connected with the lower end of the resistor R2, the grid electrode is connected with the anode of the diode T2, the diode D2 is a parasitic diode connected in parallel between the drain electrode and the source electrode of the switching tube Q2, the anode of the diode D2 is connected with the source electrode of the switching tube Q2, the cathode of the diode D2 is connected with the drain electrode of the switching tube Q2, the upper end of the resistor R2 is connected with the cathode of the diode T2, the positive end of the VON pulse is connected with the upper end of the resistor R2, and the negative end of the VON pulse is connected with the lower end of the resistor R2.
The resistor R3 is a driving resistor of the power switch tube Q3, and the type selection range is as follows:
the value range of the magnetic bead L1 is 10-100 nH, and Cgs is the gate-source capacitance of the power switch tube Q3;
The resistor R2 is a pull-down driving resistor of the power switch tube Q3, and the value range is 10-100 kΩ.
The type selection range of the capacitor C1 is as follows:
where W is the energy of the single pulse driving, U is the driving voltage, ciss is the input capacitance of the power switch Q3.
The resistor R1 is selected from the following ranges:
Wherein the method comprises the steps of For a single pulse of the drive time,Is the positive pulse width time.
Further, the switching transistors Q1 and Q2 are NMOS transistors, and the regulated voltages of the regulated diodes T1 and T2 are smaller than the input driving voltage VIN.
Further, the types of the zener diodes T1 and T2 are as follows:
wherein VT is the regulated voltage of the zener diode T1 or T2, VQ is the driving voltage of the switching transistor Q1 or Q2, and U is the input driving voltage value of VIN.
Example 2
In the driving method of the driving circuit, when VIN is input to drive by positive pulse, the working principle is as shown in fig. 2, the positive pulse charges the capacitor C1 through the resistor R1, and meanwhile, the body diode D1 of the switching tube Q1 is turned on by positive voltage, and Q1 is in an off state. The cathode of the zener diode T2 is VIN positive level, the zener diode T2 is conducted reversely to stabilize voltage, the input voltage of the grid electrode of the switching tube Q2 is VIN-VD2 (VD 2 is the regulated voltage of the zener diode T2), the switching tube Q2 is conducted by positive voltage, so that the voltage of the lower end of the resistor R2 is the same as the voltage of the negative end of the VIN input, the voltage of the upper end of the resistor R2 is the same as the voltage of the positive end of the VIN input (the voltage drop of the Q1 body diode D1 is ignored), at the moment, the voltage of the VIN input is applied to the two ends of the resistor R2, the driving voltage drives the power switching tube Q3 by positive voltage through the driving resistor R1 and the magnetic bead L1, and the switching tube is conducted.
When VIN positive pulse drive is turned off, the working principle is as shown in fig. 3, the switching tube Q1 is kept turned off, the body diode D1 is turned on, the forward voltage on the capacitor C1 is applied to the zener diode T2 through D1, and the gate of the switching tube Q2 is still subjected to positive voltage conduction. In the process, the capacitor C1 discharges through D1, R2, Q2 and R1, the conduction voltage of the D1 and the Q2 is ignored, and the resistor R1 and the resistor R2 are connected in series to divide the voltage at two ends of the capacitor C1. In the process of cutting off VIN input pulse, as long as the voltage at two ends of the resistor R2 is higher than the driving voltage of the power switch tube Q3, the Q3 can be kept on, the effect of pulse width driving is achieved, and the conversion from pulse driving to pulse width driving is realized.
When VIN is changed into negative pulse, as shown in fig. 4, the negative pulse charges the capacitor C1 in reverse direction through the resistor R1, the voltage of the capacitor C1 becomes positive and negative, meanwhile, the zener diode T1 is subjected to negative voltage reverse conduction and voltage stabilization, the gate voltage of the switching tube Q1 is VIN-VD1 (VD 1 is the regulated voltage of the zener diode T1), the switching tube Q1 is conducted due to the positive voltage, at this time, the cathode of the zener diode T2 is connected with the negative end of the input voltage VIN, the zener diode T2 is subjected to negative voltage in reverse direction, the reverse breakdown voltage is not reached, the driving voltage of the switching tube Q2 disappears, the Q2 is in the off state, and the Q2 body diode is conducted due to the positive voltage. In the process, the resistor R2 is connected in parallel with the input voltage VIN, and negative pulse is applied to the power switch tube Q3 through the resistor R3 and the magnetic bead L1, so that the switch tube is turned off.
When VIN negative pulse drive is turned off, the working state is as shown in fig. 5, negative voltage on the capacitor C1 is continuously applied to the zener diode T1 through the resistor R1, T1 continuously receives reverse breakdown voltage regulation, and the gate of the switching tube Q1 still receives positive voltage conduction. The zener diode T2 and the switching tube Q2 are still in an off state, and the Q2 body diode D2 is still on. The capacitor C1 discharges through R1, D2, R2 and Q1, the conduction voltage drop of the zener diode and the switching tube Q1 is ignored, at the moment, the resistors R1 and R2 are used for serially connecting voltage dividing voltages at two ends of the capacitor C1, and negative pressure at two ends of the resistor R2 is applied to the power switching tube through the resistor R3 and the magnetic bead L1, so that continuous negative pressure is realized and the power switching tube is turned off.
The switching transistors Q1 and Q2 in this embodiment are selected to be NMOS switching transistors, so as to improve the on/off speed of the driving circuit.
Finally, it should be understood that the foregoing description is merely illustrative of the preferred embodiments of the present invention and is not intended to limit the invention to the particular embodiments disclosed, but on the contrary, the intention is to cover all modifications, equivalents, alternatives, and alternatives falling within the spirit and scope of the invention.

Claims (8)

1.一种驱动电路，包括驱动回路，所述驱动回路包括功率开关管Q3，其特征在于，还包括脉冲回路、电阻R2、电阻R3、磁珠L1、功率开关管Q3及其体二极管D3；1. A driving circuit, comprising a driving circuit, wherein the driving circuit comprises a power switch tube Q3, and further comprising a pulse circuit, a resistor R2, a resistor R3, a magnetic bead L1, a power switch tube Q3 and a body diode D3 thereof; 所述脉冲回路输入为VIN脉冲输入端，输出为VON脉宽输出端；The pulse circuit input is the VIN pulse input terminal, and the output is the VON pulse width output terminal; 脉冲回路包括电阻R1、电阻R2、电容C1、开关管Q1及其体二极管D1、开关管Q2及其体二极管D2、稳压二极管T1、稳压二极管T2，电阻R1的一端和脉冲输入端VIN的负相端相连，R1另一端同电容C1的一端相连，C1另一端和脉冲输入端VIN的正相端相连，开关管Q1源极同脉冲输入端VIN的正相端相连，栅极同稳压二极管T1的阳极相连，漏极同稳压二极管T2的阴极相连，二极管D1为并联在开关管Q1漏极和源极之间的寄生二极管且D1的阳极和开关管Q1源极相连、D1阴极和开关管Q1漏极连接，稳压二极管T1的阴极同脉冲输入端VIN的负相端相连，开关管Q2源极和稳压二极管T1阴极相连，漏极同电阻R2下端相连，栅极同稳压二极管T2的阳极相连，二极管D2为并联在开关管Q2漏极和源极之间的寄生二极管且D2阳极和开关管Q2源极相连、D2阴极和开关管Q2漏极相连，电阻R2上端同T2阴极相连，VON脉冲正端接于电阻R2上端，VON脉冲负端接电阻R2下端；The pulse circuit includes a resistor R1, a resistor R2, a capacitor C1, a switch tube Q1 and its body diode D1, a switch tube Q2 and its body diode D2, a Zener diode T1, and a Zener diode T2. One end of the resistor R1 is connected to the negative phase end of the pulse input terminal VIN, the other end of R1 is connected to one end of the capacitor C1, the other end of C1 is connected to the positive phase end of the pulse input terminal VIN, the source of the switch tube Q1 is connected to the positive phase end of the pulse input terminal VIN, the gate is connected to the anode of the Zener diode T1, the drain is connected to the cathode of the Zener diode T2, and the diode D1 is a parasitic diode connected in parallel between the drain and source of the switch tube Q1. The anode of D1 is connected to the source of the switch tube Q1, the cathode of D1 is connected to the drain of the switch tube Q1, the cathode of the voltage-stabilizing diode T1 is connected to the negative phase end of the pulse input end VIN, the source of the switch tube Q2 is connected to the cathode of the voltage-stabilizing diode T1, the drain is connected to the lower end of the resistor R2, the gate is connected to the anode of the voltage-stabilizing diode T2, the diode D2 is a parasitic diode connected in parallel between the drain and source of the switch tube Q2, and the anode of D2 is connected to the source of the switch tube Q2, the cathode of D2 is connected to the drain of the switch tube Q2, the upper end of the resistor R2 is connected to the cathode of T2, the positive end of the VON pulse is connected to the upper end of the resistor R2, and the negative end of the VON pulse is connected to the lower end of the resistor R2; 电阻R2上端与电阻R3一端相连，R3另一端与磁珠L1一端连接，L1另一端与功率开关管Q3栅极相连，功率开关管Q3源极与电阻R2下端相连。The upper end of the resistor R2 is connected to one end of the resistor R3, the other end of R3 is connected to one end of the magnetic bead L1, the other end of L1 is connected to the gate of the power switch tube Q3, and the source of the power switch tube Q3 is connected to the lower end of the resistor R2. 2.根据权利要求1所述驱动电路，其特征在于，所述电阻R3为功率开关管Q3的驱动电阻，其选型范围为：2. The driving circuit according to claim 1, characterized in that the resistor R3 is a driving resistor of the power switch tube Q3, and its selection range is: 其中，磁珠L1取值范围为10~100nH，Cgs为功率开关管Q3的栅源间电容；Among them, the value range of the magnetic bead L1 is 10~100nH, and Cgs is the gate-source capacitance of the power switch tube Q3; 所述电阻R2为功率开关管Q3的下拉驱动电阻，取值范围为10~100kΩ。The resistor R2 is a pull-down driving resistor of the power switch tube Q3, and its value range is 10-100 kΩ. 3.根据权利要求1所述驱动电路，其特征在于，所述电容C1选型范围为：3. The driving circuit according to claim 1, characterized in that the capacitor C1 is selected in the range of: 其中W为单脉冲驱动的能量，U为VIN的输入驱动电压值，Ciss为功率开关管Q3的输入电容。Where W is the energy of a single pulse drive, U is the input drive voltage value of VIN, and Ciss is the input capacitance of the power switch tube Q3. 4.根据权利要求1所述驱动电路，其特征在于，所述电阻R1选型范围为：4. The driving circuit according to claim 1, characterized in that the resistor R1 has a selection range of: 其中为单脉冲驱动时间，为正脉宽时间。in is the single pulse driving time, It is the positive pulse width time. 5.根据权利要求1所述驱动电路，其特征在于，所述开关管Q1、Q2均为NMOS管，稳压二极管T1、T2的稳压电压小于输入驱动电压VIN。5 . The driving circuit according to claim 1 , wherein the switch tubes Q1 and Q2 are both NMOS tubes, and the regulated voltage of the zener diodes T1 and T2 is less than the input driving voltage VIN. 6.根据权利要求5所述驱动电路，其特征在于，所述稳压二极管T1、T2的选型为：6. The driving circuit according to claim 5, characterized in that the voltage zener diodes T1 and T2 are selected as follows: 其中，VT为稳压二极管T1或T2的稳压电压，VQ为开关管Q1或Q2的驱动电压，U为VIN的输入驱动电压值。Among them, VT is the stabilizing voltage of the Zener diode T1 or T2, VQ is the driving voltage of the switch tube Q1 or Q2, and U is the input driving voltage value of VIN. 7.一种基于权利要求1至6中任一项所述驱动电路的驱动方法，其特征在于，当VIN输入正脉冲驱动时，正脉冲通过电阻R1对电容C1进行充电，开关管Q1的体二极管D1正压导通，开关管Q1关断，稳压二极管T2反向导通稳压，开关管Q2正压导通，VIN输入电压施加在电阻R2两端，进行正压驱动；7. A driving method based on the driving circuit according to any one of claims 1 to 6, characterized in that when VIN inputs a positive pulse driving, the positive pulse charges the capacitor C1 through the resistor R1, the body diode D1 of the switch tube Q1 is turned on by positive voltage, the switch tube Q1 is turned off, the voltage regulator diode T2 is reversely conducted to stabilize the voltage, the switch tube Q2 is turned on by positive voltage, and the VIN input voltage is applied to both ends of the resistor R2 for positive voltage driving; 当VIN变为负脉冲时，负脉冲通过电阻R1对电容C1进行反向充电，稳压二极管T1承受负压反向导通稳压，开关管Q1正压导通，稳压二极管T2的阴极同输入电压VIN的负端相连，承受反向负压，达不到反向击穿电压而关断，同时开关管Q2驱动电压消失，Q2关断，Q2的体二极管D2承受正向电压而导通，电阻R2同输入电压VIN并联，并将负向脉冲施加在功率开关管Q3，实现开关管关断。When VIN becomes a negative pulse, the negative pulse reverse charges the capacitor C1 through the resistor R1, and the Zener diode T1 withstands the negative voltage and conducts reversely to stabilize the voltage. The switch tube Q1 is turned on by the positive voltage, and the cathode of the Zener diode T2 is connected to the negative end of the input voltage VIN and withstands the reverse negative voltage. It cannot reach the reverse breakdown voltage and is turned off. At the same time, the driving voltage of the switch tube Q2 disappears, Q2 is turned off, and the body diode D2 of Q2 withstands the forward voltage and is turned on. The resistor R2 is connected in parallel with the input voltage VIN, and the negative pulse is applied to the power switch tube Q3 to turn off the switch tube. 8.根据权利要求7所述驱动电路的驱动方法，其特征在于，当VIN正脉冲驱动断开时，开关管Q1继续保持关断，体二极管D1继续导通，电容C1上的正向电压继续通过D1施加在稳压二极管T2上，开关管Q2栅极仍然承受正压导通，电容C1经过D1、R2、Q2、R1进行放电，电阻R1和电阻R2串联分压电容C1两端的电压，电阻R2两端电压高于功率开关管Q3的驱动电压时维持Q3导通，达到脉宽驱动的效果，实现脉冲驱动到脉宽驱动的转换；8. The driving method of the driving circuit according to claim 7 is characterized in that when the VIN positive pulse driving is disconnected, the switch tube Q1 continues to remain turned off, the body diode D1 continues to be turned on, the forward voltage on the capacitor C1 continues to be applied to the voltage stabilizing diode T2 through D1, the gate of the switch tube Q2 is still subjected to positive voltage and turned on, the capacitor C1 is discharged through D1, R2, Q2, and R1, the resistor R1 and the resistor R2 are connected in series to divide the voltage across the capacitor C1, and when the voltage across the resistor R2 is higher than the driving voltage of the power switch tube Q3, Q3 is kept turned on, so as to achieve the effect of pulse width driving, and realize the conversion from pulse driving to pulse width driving; 当VIN负脉冲驱动断开时，电容C1上的负电压继续经过电阻R1施加在稳压二极管T1上，T1继续承受反向击穿稳压，开关管Q1栅极仍然承受正压导通，稳压二极管T2和开关管Q2仍然处于关断状态，Q2体二极管D2仍然导通，电容C1经过R1、D2、R2、Q1进行放电，电阻R1和R2进行串联分压电容C1两端电压，电阻R2两端负压施加在功率开关管Q3，实现持续负压而关断。When the negative pulse drive of VIN is disconnected, the negative voltage on capacitor C1 continues to be applied to the Zener diode T1 through resistor R1, T1 continues to withstand reverse breakdown voltage stabilization, the gate of switch tube Q1 still withstands positive voltage and is turned on, Zener diode T2 and switch tube Q2 are still in the off state, Q2 body diode D2 is still turned on, capacitor C1 is discharged through R1, D2, R2, and Q1, resistors R1 and R2 are connected in series to divide the voltage across capacitor C1, and the negative voltage across resistor R2 is applied to the power switch tube Q3, achieving continuous negative pressure and shutdown.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110620573A (en) * 2018-06-19 2019-12-27 台达电子工业股份有限公司 Drive circuit for power semiconductor switch
KR20220140118A (en) * 2021-04-09 2022-10-18 중앙대학교 산학협력단 Pulse power supply and high-speed gate control method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
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CN101944853B (en) * 2010-03-19 2013-06-19 郁百超 Green power inverter
CN109495098B (en) * 2016-08-30 2022-07-19 苏州泰思特电子科技有限公司 Compact electronic switch driving circuit
KR102026929B1 (en) * 2018-05-17 2019-10-01 한국전기연구원 Gate driving circuit for power switch
CN113193735B (en) * 2021-04-26 2023-03-14 广州金升阳科技有限公司 Drive control method and circuit thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110620573A (en) * 2018-06-19 2019-12-27 台达电子工业股份有限公司 Drive circuit for power semiconductor switch
KR20220140118A (en) * 2021-04-09 2022-10-18 중앙대학교 산학협력단 Pulse power supply and high-speed gate control method thereof

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