CN118932296A - Evaporation source assembly, evaporation device and evaporation method - Google Patents
Evaporation source assembly, evaporation device and evaporation method Download PDFInfo
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- CN118932296A CN118932296A CN202411259446.6A CN202411259446A CN118932296A CN 118932296 A CN118932296 A CN 118932296A CN 202411259446 A CN202411259446 A CN 202411259446A CN 118932296 A CN118932296 A CN 118932296A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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Abstract
本申请提供一种蒸镀源组件、蒸镀装置及蒸镀方法，该蒸镀源组件包括：承载板，承载板包括第一表面；多个蒸镀单元，每个蒸镀单元包括多个间隔设置的固定点源，固定点源位于第一表面上，每个蒸镀单元的多个固定点源的连线经过第一表面的中心，至少两个蒸镀单元用于容纳不同的蒸镀材料；旋转点源，旋转点源的中心与第一表面的中心重合，旋转点源包括多个分位，至少两个分位用于容纳不同的蒸镀材料，分位容纳的蒸镀材料与蒸镀单元容纳的蒸镀材料相同。本申请的技术方案可以提高蒸镀材料的蒸镀均匀性。
The present application provides an evaporation source component, an evaporation device and an evaporation method, wherein the evaporation source component comprises: a carrier plate, the carrier plate comprises a first surface; a plurality of evaporation units, each evaporation unit comprises a plurality of fixed point sources arranged at intervals, the fixed point sources are located on the first surface, the connecting line of the plurality of fixed point sources of each evaporation unit passes through the center of the first surface, and at least two evaporation units are used to accommodate different evaporation materials; a rotating point source, the center of the rotating point source coincides with the center of the first surface, the rotating point source comprises a plurality of sub-positions, at least two sub-positions are used to accommodate different evaporation materials, and the evaporation materials accommodated in the sub-positions are the same as the evaporation materials accommodated in the evaporation units. The technical solution of the present application can improve the uniformity of evaporation of evaporation materials.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to an evaporation source assembly, an evaporation device and an evaporation method.
Background
The vapor deposition is a method in which a vapor deposition material is heated to a certain temperature by an evaporation source to evaporate or sublimate, and a thin film material is deposited on the surface of a substrate. In the preparation process of the perovskite battery, the perovskite functional layer can be prepared by evaporation, however, when the perovskite functional layer is evaporated, multi-element evaporation is involved, and the conventional evaporation source has some problems when the multi-element evaporation is performed, so that the prepared perovskite functional layer is poor in uniformity.
Disclosure of Invention
In order to solve the above problems, embodiments of the present application provide a vapor deposition source assembly, a vapor deposition apparatus, and a vapor deposition method.
In a first aspect, an embodiment of the present application provides an evaporation source assembly, including: the bearing plate comprises a first surface; the vapor deposition units comprise a plurality of fixed point sources which are arranged at intervals, the fixed point sources are positioned on the first surface, a connecting line of the fixed point sources of each vapor deposition unit passes through the center of the first surface, and at least two vapor deposition units are used for accommodating different vapor deposition materials; the center of the rotating point source coincides with the center of the first surface, the rotating point source comprises a plurality of sub-positions, at least two sub-positions are used for containing different evaporation materials, and the evaporation materials contained in the sub-positions are identical to the evaporation materials contained in the evaporation units.
In combination with the first aspect, a first pit is arranged on the first surface, and corresponds to the position of the rotating point source; the rotating point source comprises a first crucible which is placed in a first pit; preferably, the first crucible is divided into a plurality of sub-positions; preferably, the area of each split is equal; preferably, the number of bits is less than or equal to 4; preferably, the number of the sub-positions is the same as the number of the evaporation units; preferably, a rotating device is arranged at the bottom of the first pit and used for controlling the first crucible to rotate; preferably, the rotating device comprises a rotating shaft, a supporting plate and a driving piece, one end of the rotating shaft is fixedly connected with the supporting plate, the other end of the rotating shaft is connected with the driving piece, and the supporting plate is used for placing the first crucible; preferably, the carrier plate is provided with first heating means at the bottom and the peripheral side of the first pit for heating the first crucible.
With reference to the first aspect, the plurality of fixed point sources of each evaporation unit are arranged in a straight line; preferably, a plurality of second pits are arranged on the first surface, and the second pits are in one-to-one correspondence with the positions of the fixed point sources; each fixed point source comprises a second crucible which is respectively placed in a corresponding second pit; preferably, the distance between adjacent fixed point sources of each evaporation unit is greater than or equal to 5cm and less than or equal to 8cm; preferably, the bearing plate is provided with a second heating device which is positioned at the bottom and the periphery of the second pit and is used for heating the second crucible; preferably, the second heating means independently controls the heating temperature of each second crucible.
With reference to the first aspect, the evaporation source assembly further includes a shielding window mounted on the first surface, the shielding window being configured to shield a portion of the rotating point source to expose a portion of the rotating point source; preferably, the area of the rotating point source exposed out of the shielding window is larger than or equal to one minute; preferably, the area of the shielding window shielding the rotating point source is adjustable.
In combination with the first aspect, the rotating point source comprises a first crucible divided into a plurality of sub-positions; the evaporation source assembly further comprises a controller, and the controller is used for controlling the first crucible to rotate; preferably, the controller is used for controlling the first crucible to rotate when the evaporation of one evaporation material is completed and the evaporation of the other evaporation material is needed, so that the position of the other evaporation material is exposed out of the shielding window; preferably, the evaporation material comprises a perovskite raw material.
In a second aspect, an embodiment of the present application provides an evaporation device, including: the evaporation source assembly comprises a bearing plate, wherein the bearing plate comprises a first surface and a second surface which are oppositely arranged; and the third heating device is contacted with the second surface so as to heat the bearing plate.
In a third aspect, an embodiment of the present application provides an evaporation method, including: providing the vapor deposition device; placing different vapor deposition materials in at least two vapor deposition units of the vapor deposition device; respectively placing evaporation materials in at least two sub-positions of a rotating point source of the evaporation device; the substrate is moved into the vapor deposition device, and a vapor deposition material is deposited on the surface of the substrate.
In combination with the third aspect, the step of evaporating the evaporation materials on the surface of the substrate includes: heating an evaporation unit for placing an evaporation material and a rotary point source to the evaporation temperature of the evaporation material respectively; vapor deposition material is simultaneously deposited on the surface of the substrate; preferably, the evaporation material comprises a perovskite raw material, preferably the perovskite raw material comprises at least one of lead iodide, methylamine iodide, cesium iodide, formamidine iodide.
In combination with the third aspect, the vapor deposition material includes a first vapor deposition material and a second vapor deposition material, and vapor deposition material is deposited on the surface of the substrate, and includes: shielding part of the rotating point source by using a shielding window, so that the area of the rotating point source exposed out of the shielding window is equal to one minute; rotating the first crucible of the rotary point source so that the branch position containing the first vapor deposition material is exposed out of the shielding window; heating an evaporation unit for placing a first evaporation material and a rotary point source to the evaporation temperature of the first evaporation material respectively; evaporating a first evaporating material on the surface of the substrate; after the first evaporation material is evaporated, rotating the first crucible so that the position of the second evaporation material is exposed out of the shielding window; heating the evaporation unit and the rotary point source which are used for placing the second evaporation material to the evaporation temperature of the second evaporation material respectively; evaporating a second evaporation material on the surface of the substrate; preferably, the vapor deposition material is vapor deposited on the surface of the substrate, and the vapor deposition material includes: sequentially and alternately evaporating a first evaporation material and a second evaporation material on the surface of the substrate; preferably, the first vapor deposition material and/or the second vapor deposition material includes at least one of lead iodide, methylamine iodide, cesium iodide, and formamidine iodide; preferably, the first vapor deposition material comprises lead iodide and the second vapor deposition material comprises methylamine iodide.
With reference to the second aspect, before the step of evaporating the evaporation material on the surface of the substrate, the method further includes: vacuumizing the evaporation device; preferably, the vacuum degree in the evaporation device is 10 -6～10-7 mbar; preferably, before the step of evaporating the evaporation material on the surface of the substrate, the method further comprises: and heating the bearing plate to a specific temperature, and preserving heat, wherein the specific temperature is less than the evaporation temperature of the evaporation material.
Through the technical scheme, the plurality of vapor deposition units are arranged on the same bearing plate, so that the vapor deposition unit is suitable for vapor deposition of various vapor deposition materials, and the vapor deposition uniformity can be improved; in addition, each evaporation unit comprises a plurality of fixed point sources, the number of the fixed point sources can be determined according to requirements, and evaporation of different areas is realized. The scheme is particularly suitable for the evaporation of the perovskite battery, and can improve the evaporation uniformity of the perovskite material when the multi-element evaporation (such as multi-element co-evaporation and multi-element sequential evaporation) of the perovskite material is carried out; in addition, the number of the fixed point sources can be determined according to the requirements, and then the evaporation of the large-area perovskite battery is realized.
Drawings
Fig. 1 is a schematic structural diagram of an evaporation source assembly according to an embodiment of the application.
Fig. 2a is a schematic view of a structure of a crucible placed on a carrier plate according to an embodiment of the present application.
Fig. 2b is a schematic view of a structure of a carrier plate without a crucible according to an embodiment of the present application.
Fig. 3a is a schematic diagram of a structure of a shielding window shielding a rotating point source according to an embodiment of the present application.
Fig. 3b is a schematic view of a structure of a shielding window shielding a rotating point source according to another embodiment of the present application.
Fig. 4 is a schematic view of a rotating device for controlling rotation of a first crucible according to an embodiment of the present application.
Fig. 5 is a schematic structural diagram of an evaporation device according to an embodiment of the application.
Fig. 6 is a schematic flow chart of an evaporation method according to an embodiment of the application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
At present, the evaporation process is widely applied to the production process of a coating film of an electronic device, and evaporation sources of evaporation equipment used in the display and photovoltaic industries mainly comprise a Point Source (Point Source), a line Source (Linear Source) and a Plane Source (Plane Source), and a perovskite functional layer is usually prepared by using the Point Source. When preparing a perovskite battery, the evaporation of a perovskite functional layer relates to multi-element evaporation, and when evaporating a perovskite material, a plurality of independent point sources are generally used for realizing multi-element evaporation, and as the temperatures of the plurality of independent point sources need to be controlled independently, the temperature control requirement is higher, once the control is poor, the uniformity of the formed perovskite functional layer is easily influenced, and the power conversion efficiency of the perovskite battery is further influenced; in addition, when the evaporation plating, the cavity opening and feeding are needed for many times, and the vacuum pumping is needed for many times, so that the evaporation plating efficiency is lower.
In view of the above technical problems, an embodiment of the present application provides an evaporation source assembly, including a carrier plate, where the carrier plate includes a first surface; the vapor deposition units comprise a plurality of fixed point sources which are arranged at intervals, the fixed point sources are positioned on the first surface, a connecting line of the fixed point sources of each vapor deposition unit passes through the center of the first surface, and at least two vapor deposition units are used for accommodating different vapor deposition materials; the center of the rotating point source coincides with the center of the first surface, the rotating point source comprises a plurality of sub-positions, at least two sub-positions are used for containing different evaporation materials, and the evaporation materials contained in the sub-positions are identical to the evaporation materials contained in the evaporation units. In the embodiment of the application, a plurality of evaporation units are arranged on the same bearing plate, so that the evaporation unit is suitable for evaporating a plurality of evaporation materials and can improve the evaporation uniformity; in addition, each evaporation unit comprises a plurality of fixed point sources, and the number of the fixed point sources can be determined according to requirements, so that different evaporation can be realized. The scheme is particularly suitable for the evaporation of the perovskite battery, and can improve the evaporation uniformity of the perovskite material when the multi-element evaporation (such as multi-element co-evaporation and multi-element sequential evaporation) of the perovskite material is carried out; in addition, the number of the fixed point sources can be determined according to the requirements, and then the evaporation of the large-area perovskite battery is realized.
Fig. 1 is a schematic structural diagram of an evaporation source assembly according to an embodiment of the application. As shown in fig. 1, the vapor deposition source assembly includes a carrier plate 10, a plurality of vapor deposition units 20, and a rotation point source 30. The carrier plate 10 includes a first surface 110, and the first surface 110 is used for disposing the evaporation unit 20 and the rotation point source 30.
In the embodiment of the present application, each evaporation unit 20 includes a plurality of fixed point sources 201 disposed at intervals, the fixed point sources 201 are located on the first surface 110, and a line connecting the fixed point sources 201 of each evaporation unit 20 passes through the center of the first surface 110. Alternatively, the plurality of fixed point sources 201 of each vapor deposition unit 20 are arranged in a straight line. That is, the fixed point sources 201 of each evaporation unit 20 are symmetrically disposed along the center of the first surface 110, so that on one hand, the evaporation uniformity of the evaporation material can be improved, and on the other hand, the stability of the carrier plate 10 can be improved. In addition, the size of the carrier plate 10 and the number of the fixed point sources 201 can be designed according to actual requirements, different evaporation areas can be realized, and when the carrier plate is applied to perovskite battery preparation, a large-size perovskite battery can be prepared.
As shown in fig. 1, the evaporation source assembly includes four evaporation units, which are a first evaporation unit 21, a second evaporation unit 22, a third evaporation unit 23, and a fourth evaporation unit 24, respectively. It is understood that the evaporation source assembly may also comprise other numbers of evaporation units, e.g. the evaporation source assembly comprises two evaporation units, three evaporation units, five evaporation units, etc. In order to ensure vapor deposition uniformity of the vapor deposition material, the number of vapor deposition units is preferably 4 or less, that is, four materials may be simultaneously vapor deposited at most. Alternatively, the first vapor deposition unit 21, the second vapor deposition unit 22, the third vapor deposition unit 23, and the fourth vapor deposition unit 24 each include six fixed point sources 201. In the embodiment of the present application, the first vapor deposition unit 21, the second vapor deposition unit 22, the third vapor deposition unit 23, and the fourth vapor deposition unit 24 are only used for distinguishing between being able to accommodate different vapor deposition materials, and when no vapor deposition material is accommodated, the fixed point sources 201 included in the first vapor deposition unit 21, the second vapor deposition unit 22, the third vapor deposition unit 23, and the fourth vapor deposition unit 24 are identical. The distance between adjacent fixed point sources 201 of each vapor deposition unit 20 is greater than or equal to 5cm and less than or equal to 8cm. Alternatively, the distance between adjacent fixed point sources 201 is 5cm, 6cm, 7cm, 8cm. If the distance between the adjacent fixed point sources 201 is smaller than 5cm, the evaporation areas of the adjacent fixed point sources 201 overlap, and uniformity of the formed evaporation material layer is affected; if the distance between adjacent fixed point sources 201 is greater than 8cm, the vapor deposition material cannot be deposited on the partial region on the substrate.
In the embodiment of the present application, at least two vapor deposition units 20 are used to accommodate different vapor deposition materials. Alternatively, as shown in fig. 1, if two vapor deposition materials are required to be deposited, any two vapor deposition units in the evaporation source assembly may be selected to accommodate one vapor deposition material, for example, the first vapor deposition unit 21 and the second vapor deposition unit 22 each accommodate one vapor deposition material. If it is necessary to deposit three vapor deposition materials, any three vapor deposition units in the evaporation source module may be selected to store one vapor deposition material, for example, each of the first vapor deposition unit 21, the second vapor deposition unit 22, and the third vapor deposition unit 23. Alternatively, the evaporation material comprises a perovskite raw material.
With continued reference to FIG. 1, the center of the rotational point source 30 coincides with the center of the first surface 110. The rotation point source 30 includes a plurality of sub-positions 311, at least two sub-positions 311 are used for accommodating different vapor deposition materials, and the vapor deposition materials accommodated by the sub-positions 311 are the same as the vapor deposition materials accommodated by the vapor deposition unit. In the embodiment of the present application, the number of the dividing units 311 is the same as the number of the vapor deposition units 20. That is, the dividing units 311 are in one-to-one correspondence with the vapor deposition units 20, and when one vapor deposition unit 20 accommodates one vapor deposition material, any one of the dividing units 311 is used for accommodating the vapor deposition material, so that the vapor deposition material can be uniformly deposited on the substrate. That is, by providing the selective point source, vapor deposition uniformity can be improved.
Fig. 2a is a schematic view of a structure of a crucible placed on a carrier plate according to an embodiment of the present application. Fig. 2b is a schematic view of a structure of a carrier plate without a crucible according to an embodiment of the present application. In the embodiment of the present application, the material of the carrier plate 10 includes metal. The shape of the first surface 110 includes a circular shape, and the provision of the first surface 110 as a circular shape can ensure force balance. As shown in fig. 2a, a first surface 110 is provided with a first well 111 and a plurality of second wells 112. The first pit 111 corresponds to the position of the point of rotation source 30. Specifically, the rotating point source 30 includes a first crucible 310, the first crucible 310 being placed within the first pit 111, the first crucible 310 being divided into a plurality of sub-stations 311. In the embodiment of the present application, the area of each of the sub-bits 311 is equal, and the number of the sub-bits 311 is less than or equal to 4. In the embodiment of the present application, the second pit 112 corresponds to the position of the fixed point source 201 one by one. Each fixed point source 201 includes a second crucible 2011, the second crucible 2011 being positioned within a corresponding second pit 112, respectively. In the embodiment of the present application, the materials of the first crucible 310 and the second crucible 2011 include at least one of metal and ceramic.
Since the evaporation temperatures of the different evaporation materials are different, the temperatures of the different evaporation units 20 need to be controlled individually. Alternatively, the vaporization temperatures of each of the fixed point source 201 and the rotating point source 30 are individually controlled. As shown in fig. 2b, the carrier plate 10 is provided with a first heating device 121, the first heating device 121 being located at the bottom and the peripheral side of the first pit 111, the first heating device 121 being for heating the first crucible 310. The carrier plate 10 is further provided with a second heating device 122, the second heating device 122 is located at the bottom and the periphery of the second pit 112, and the second heating device 122 is used for heating the second crucible 2011. The second heating device 122 independently controls the heating temperature of each second crucible 2011. In the embodiment of the present application, the first heating device 121 and the second heating device 122 include heating wires. It should be noted that, in order to illustrate the distribution of the first heating device 121 and the second heating device 122, the first heating device 121 and the second heating device 122 are shown in fig. 2b, and those skilled in the art will understand that the first heating device 121 and the second heating device 122 are disposed inside the carrier plate 10, that is, on the inner surface of the first surface 110.
In the embodiment of the present application, in the case of sequential vapor deposition, if the rotation point source 30 includes a plurality of vapor deposition materials, the vapor deposition materials that do not need vapor deposition may be blocked. Fig. 3a is a schematic diagram of a structure of a shielding window shielding a rotating point source according to an embodiment of the present application. Fig. 3b is a schematic view of a structure of a shielding window shielding a rotating point source according to another embodiment of the present application. The evaporation source assembly further comprises a shielding window 40, the shielding window 40 being mounted on the first surface 110, the shielding window 40 being adapted to shield the partially rotated point source 30 to expose the partially rotated point source 30. Optionally, the area of the rotating point source 30 exposed to the shielding window 40 is greater than or equal to one minute 311. For example, in fig. 3a, the area of the rotation point source 30 exposed to the shielding window 40 is one split 311, and only one evaporation material can be evaporated. In fig. 3b, the area of the rotation point source 30 exposed to the shielding window 40 is two divided portions 311, and at this time, two vapor deposition materials can be deposited. In the embodiment of the present application, if the material to be evaporated is blocked by the blocking window 40, the first crucible 310 of the rotating point source 30 may be adjusted to expose the material to be evaporated to the blocking window 40. If 4 kinds of vapor deposition materials are to be simultaneously deposited, the shielding window 40 may be detached from the carrier plate 10.
Optionally, the area of the shutter window 40 that shields the rotating point source 30 is adjustable. Illustratively, one end of the shielding window 40 is fixed to the carrier plate 10, and the other end of the shielding window 40 is adjustable, thereby adjusting the area of the shielding rotating point source 30. Illustratively, the shielding window 40 includes a plurality of shielding sheets connected in sequence, where the shielding area of each shielding sheet is equivalent to one of the sub-positions 311, one of the shielding sheets is fixed, and the other shielding sheets are movable relative to the shielding sheet, and the shielding window 40 can shield one or more of the sub-positions 311 according to actual requirements. For example, the rotating point source 30 includes four sub-positions, and if only one material needs to be evaporated, the shielding window 40 may move the shielding sheet such that the shielding window 40 shields three sub-positions, i.e., only one sub-position is exposed. If the material to be evaporated is not exposed to the shielding window 40, the first crucible 310 may be rotated such that the material to be evaporated is exposed to the shielding window 40. If two materials are required to be evaporated, the shielding window 40 can move the shielding sheet, so that the shielding window 40 shields two sub-positions, i.e. exposes two sub-positions. If the material to be evaporated is not exposed to the shielding window 40, the first crucible 310 may be rotated such that the material to be evaporated is exposed to the shielding window 40.
It should be noted that, the evaporation source assembly in the embodiment of the present application may be used for co-evaporation of multiple evaporation materials, or sequential evaporation of multiple evaporation materials. If only co-evaporation is involved in the primary evaporation process, the shielding window 40 can be detached from the carrier plate without shielding the rotating point source 30. If it is necessary to sequentially vapor-deposit the vapor-deposition materials in the first vapor-deposition process, when one vapor-deposition material is vapor-deposited, the shielding window 40 is used to shield a part of the rotating point sources 30 so that the area of the rotating point sources 30 exposed to the shielding window is one minute 311, and then the minute containing the vapor-deposition material is exposed to the shielding window 40 by rotating the first crucible 310. Evaporation of a plurality of different evaporation materials can be accomplished by rotating the first crucible 310. Alternatively, if both co-evaporation and sequential evaporation are required in one evaporation process, sequential evaporation or co-evaporation of the evaporation materials may be achieved by adjusting the shielding area of the shielding window 40.
In an embodiment of the present application, the rotation of the rotating point source 30 may be controlled by a rotating device. Fig. 4 is a schematic view of a rotating device for controlling rotation of a first crucible according to an embodiment of the present application. As shown in fig. 4, the bottom of the first pit 111 is provided with a rotation device 50, and the rotation device 50 is used for controlling the rotation of the first crucible 310. Alternatively, the rotating device 50 includes a support plate 501, a rotating shaft 502, and a driving member 503, one end of the rotating shaft 502 is connected to the support plate 501, the other end of the rotating shaft 502 is connected to the driving member 503, and the support plate 501 is used for placing the first crucible 310. The driving member 503 includes a motor. Alternatively, the support plate 501 is the bottom wall of the first well 111. Optionally, the evaporation source assembly further comprises a controller 60, the controller 60 being configured to control the rotation of the first crucible 310, in particular, the controller 60 being configured to control the driving member 503, thereby controlling the rotation of the first crucible 310. When the evaporation of one evaporation material is completed and another evaporation material is required to be evaporated, the first crucible 310 is controlled to rotate so that the division 311 containing the other evaporation material is exposed to the shielding window 40. Therefore, when different evaporation materials are evaporated in sequence, the crucible can be prevented from being adjusted by opening a cavity, and the uniformity of the evaporation functional layer is improved; and the vacuum pumping is not needed for many times, so that the production efficiency is improved.
In a second aspect, an embodiment of the present application provides an evaporation device, including the evaporation source assembly described above.
Fig. 5 is a schematic structural diagram of an evaporation device according to an embodiment of the application. The vapor deposition device includes a vapor deposition assembly and a third heating device 70. The evaporation source assembly includes a carrier plate 10, the carrier plate 10 includes a first surface 110 and a second surface 120 that are disposed opposite to each other, and the first surface 110 is the first surface 110 in the evaporation source assembly, and further description will refer to fig. 1 to 4, which are not repeated here. The third heating device 70 contacts the second surface 120 to heat the carrier plate 10. Optionally, the third heating device 70 comprises a heating wire. Before vapor deposition, the carrier plate 10 is heated by the third heating device 70 to a specific temperature and then kept warm, thereby preheating and keeping warm the first crucible 310 and the second crucible 2011. The third heating device 70 can uniformly heat the bearing plate, which is beneficial to improving the thermal stability of evaporation; in addition, when vapor deposition is performed, the first crucible 310 and the second crucible 2011 are heated to the evaporation temperature by the first heating device 121 and the second heating device 122, respectively, at the preheating temperature, so that the heating time can be saved and the heating efficiency can be improved.
In a second aspect, an embodiment of the present application provides a vapor deposition method, where vapor deposition is performed using the vapor deposition apparatus described above.
Fig. 6 is a schematic flow chart of an evaporation method according to an embodiment of the application. As shown in fig. 6, the method includes the following steps.
In step S610, a vapor deposition apparatus is provided.
In the embodiment of the application, the vapor deposition device is the vapor deposition device.
In step S620, different vapor deposition materials are placed in at least two vapor deposition units of the vapor deposition device.
In the embodiment of the application, the vapor deposition device can be suitable for vapor deposition of various vapor deposition materials. In the one-time vapor deposition process, if two vapor deposition materials are required to be deposited, the two vapor deposition materials are placed in two vapor deposition units of the vapor deposition device, respectively. If three vapor deposition materials are required to be deposited, the three vapor deposition materials are placed in three vapor deposition units of the vapor deposition device. If four vapor deposition materials are required to be deposited, the four vapor deposition materials are placed in each of the four vapor deposition units of the vapor deposition device. Alternatively, the evaporation material includes a perovskite raw material, and illustratively, the perovskite raw material includes at least one of lead iodide, methylamine iodide, cesium iodide, and formamidine iodide. Preferably, the perovskite material comprises lead iodide and methylamine iodide.
In step S630, at least two vapor deposition materials are placed in at least two partial positions of the rotation point source of the vapor deposition device.
The vapor deposition material placed in the rotation point source corresponds to the vapor deposition material placed in the vapor deposition unit. Alternatively, if two vapor deposition materials are required to be deposited, the two vapor deposition materials are placed in any two positions of the rotating point source. If three vapor deposition materials are required to be vapor deposited, the three vapor deposition materials are placed in any three positions of the rotating point source. If four vapor deposition materials are required to be vapor deposited, the four vapor deposition materials are placed in four minutes of the rotating point source.
In step S640, the substrate is moved into the vapor deposition apparatus, and a vapor deposition material is deposited on the surface of the substrate.
In the embodiment of the present application, the plurality of vapor deposition materials may be co-deposited, or may be sequentially deposited (i.e., sequential vapor deposition).
Because different dividing positions of the rotary point source are controlled by the same heating device, when multiple vapor deposition materials are subjected to co-vapor deposition, the vapor deposition temperatures of the multiple vapor deposition materials need to be ensured to be similar. Specifically, a plurality of evaporation units and a rotary point source for placing evaporation materials are respectively heated to the evaporation temperature of the evaporation materials; then vapor deposition material is simultaneously deposited on the surface of the substrate. The "evaporation temperature of the vapor deposition material" herein is based on the evaporation temperature of the vapor deposition material having a higher evaporation temperature.
Optionally, when multiple evaporation materials are needed in sequence, a shielding window is utilized to shield part of the rotating point sources, so that the area of the rotating point sources exposed out of the shielding window is equal to one minute; rotating the first crucible to expose the current position containing the evaporation material to the shielding window; after the evaporation of the current evaporation material is completed, rotating the first crucible to enable the position of the evaporation material to be evaporated to be exposed out of the shielding window; this process is repeated until evaporation is completed. Specifically, two vapor deposition materials to be sequentially vapor deposited will be described as an example. The first vapor deposition material includes lead iodide, and the second vapor deposition material includes potassium iodide amine. Shielding part of the rotating point source by using a shielding window, so that the area of the rotating point source exposed out of the shielding window is equal to one minute; rotating the first crucible so that the partition containing the first vapor deposition material is exposed to the shielding window; heating an evaporation unit for placing a first evaporation material and a rotary point source to the evaporation temperature of the first evaporation material respectively; evaporating a first evaporating material on the surface of the substrate; after the first evaporation material is evaporated, rotating the first crucible so that the position of the second evaporation material is exposed out of the shielding window; heating the evaporation unit and the rotary point source which are used for placing the second evaporation material to the evaporation temperature of the second evaporation material respectively; and evaporating a second evaporating material on the surface of the substrate. In some embodiments, the first vapor deposition material and the second vapor deposition material need to be deposited in multiple times, alternatively, the first vapor deposition material and the second vapor deposition material are deposited on the surface of the substrate alternately in turn, so that the first vapor deposition material and the second vapor deposition material can be uniformly mixed.
Optionally, before performing step S640, the method further includes: vacuum is drawn on the evaporation device. Alternatively, the vacuum in the evaporation device is 10 -6～10-7 mbar. Illustratively, the vacuum within the evaporation device may be any one of 10 -7mbar、2*10-7mbar、5*10-7mbar、8*10-7 mbar and 10 -6 mbar. Optionally, the method further comprises heating the bearing plate to a specific temperature and preserving heat, wherein the specific temperature is less than the evaporation temperature of the evaporation material. Before evaporation, the bearing plate is heated and insulated, so that the time required for heating to the evaporation temperature can be reduced, and the evaporation efficiency is improved.
The basic principles of the present application have been described above in connection with specific embodiments, but it should be noted that the advantages, benefits, effects, etc. mentioned in the present application are merely examples and not intended to be limiting, and these advantages, benefits, effects, etc. are not to be construed as necessarily possessed by the various embodiments of the application. Furthermore, the specific details disclosed herein are for purposes of illustration and understanding only, and are not intended to be limiting, as the application is not necessarily limited to practice with the above described specific details.
The block diagrams of the devices, apparatuses, devices, systems referred to in the present application are only illustrative examples and are not intended to require or imply that the connections, arrangements, configurations must be made in the manner shown in the block diagrams. As will be appreciated by one of skill in the art, the devices, apparatuses, devices, systems may be connected, arranged, configured in any manner. Words such as "including," "comprising," "having," and the like are words of openness and mean "including but not limited to," and are used interchangeably therewith. The terms "or" and "as used herein refer to and are used interchangeably with the term" and/or "unless the context clearly indicates otherwise. The term "such as" as used herein refers to, and is used interchangeably with, the phrase "such as, but not limited to.
It is also noted that in the apparatus, devices and methods of the present application, the components or steps may be disassembled and/or assembled. Such decomposition and/or recombination should be considered as equivalent aspects of the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit embodiments of the application to the form disclosed herein. Although a number of example aspects and embodiments have been discussed above, a person of ordinary skill in the art will recognize certain variations, modifications, alterations, additions, and subcombinations thereof.
Claims (10)
1. An evaporation source assembly, comprising:
a carrier plate comprising a first surface;
The vapor deposition units comprise a plurality of fixed point sources which are arranged at intervals, the fixed point sources are positioned on the first surface, a connecting line of the fixed point sources of each vapor deposition unit passes through the center of the first surface, and at least two vapor deposition units are used for accommodating different vapor deposition materials;
the center of the rotating point source coincides with the center of the first surface, the rotating point source comprises a plurality of sub-positions, at least two sub-positions are used for accommodating different vapor deposition materials, and the vapor deposition materials accommodated by the sub-positions are identical to the vapor deposition materials accommodated by the vapor deposition unit.
2. The vapor deposition source assembly of claim 1, wherein a first pit is provided on the first surface, the first pit corresponding to a position of the rotational point source;
The rotary point source comprises a first crucible, and the first crucible is placed in the first pit;
preferably, the first crucible is divided into a plurality of the divided positions;
preferably, the area of each of the sub-bits is equal;
preferably, the number of bits is less than or equal to 4;
Preferably, the number of the dividing positions is the same as the number of the evaporation units;
preferably, a rotating device is arranged at the bottom of the first pit and used for controlling the first crucible to rotate;
preferably, the rotating device comprises a rotating shaft, a supporting plate and a driving piece, one end of the rotating shaft is fixedly connected with the supporting plate, the other end of the rotating shaft is connected with the driving piece, and the supporting plate is used for placing the first crucible;
Preferably, the bearing plate is provided with a first heating device which is positioned at the bottom and the periphery of the first pit and is used for heating the first crucible.
3. The vapor deposition source assembly of claim 1 wherein a plurality of the fixed point sources of each vapor deposition unit are arranged in a straight line;
preferably, a plurality of second pits are arranged on the first surface, and the second pits are in one-to-one correspondence with the positions of the fixed point sources;
Each fixed point source comprises a second crucible which is respectively placed in the corresponding second pit;
Preferably, a distance between adjacent fixed point sources of each evaporation unit is greater than or equal to 5cm and less than or equal to 8cm;
preferably, the bearing plate is provided with a second heating device which is positioned at the bottom and the periphery of the second pit and is used for heating the second crucible;
preferably, the second heating means independently controls the heating temperature of each second crucible.
4. The vapor deposition source assembly of claim 1 further comprising a shutter window mounted on the first surface, the shutter window for shielding a portion of the rotational point source to expose a portion of the rotational point source;
preferably, the area of the rotating point source exposed out of the shielding window is larger than or equal to one of the sub-positions;
preferably, the area of the shielding window for shielding the rotating point source is adjustable.
5. The vapor deposition source assembly of claim 4 wherein the rotational point source comprises a first crucible divided into the plurality of sub-positions;
the evaporation source assembly further comprises a controller, wherein the controller is used for controlling the first crucible to rotate;
Preferably, the controller is configured to control the first crucible to rotate when evaporation of one evaporation material is completed and evaporation of another evaporation material is required, so that the split position containing the other evaporation material is exposed out of the shielding window;
Preferably, the evaporation material comprises a perovskite raw material.
6. An evaporation device, comprising:
the vapor deposition source assembly of any one of claims 1 to 5 comprising a carrier plate comprising oppositely disposed first and second surfaces;
And the third heating device is contacted with the second surface so as to heat the bearing plate.
7.A vapor deposition method, comprising:
Providing the vapor deposition device according to claim 6;
Different evaporation materials are placed in at least two evaporation units of the evaporation device;
The evaporation material is respectively placed in at least two sub-positions of a rotating point source of the evaporation device;
and moving the substrate into the vapor deposition device, and vapor-depositing the vapor deposition material on the surface of the substrate.
8. The method according to claim 7, wherein the evaporation temperatures of at least two of the evaporation materials are close to each other, and the step of evaporating the evaporation materials on the surface of the substrate comprises:
Heating the evaporation unit and the rotary point source which are used for placing the evaporation material to the evaporation temperature of the evaporation material respectively;
simultaneously evaporating the evaporation material on the surface of the substrate;
preferably, the evaporation material comprises a perovskite raw material;
Preferably, the perovskite raw material comprises at least one of lead iodide, methylamine iodide, cesium iodide, formamidine iodide.
9. The method according to claim 7, wherein the vapor deposition material includes a first vapor deposition material and a second vapor deposition material, and the vapor deposition material is vapor deposited on the surface of the substrate, comprising:
shielding part of the rotating point source by using a shielding window, so that the area of the rotating point source exposed out of the shielding window is equal to one of the sub-positions;
rotating the first crucible of the rotating point source so that the split position containing the first vapor deposition material is exposed out of the shielding window;
heating the evaporation unit and the rotary point source which are used for placing the first evaporation material to the evaporation temperature of the first evaporation material respectively;
evaporating the first evaporation material on the surface of the substrate;
after the first evaporation material is evaporated, rotating the first crucible so that the separated position containing the second evaporation material is exposed out of the shielding window;
Heating the evaporation unit and the rotary point source which are used for placing the second evaporation material to the evaporation temperature of the second evaporation material respectively;
Evaporating the second evaporation material on the surface of the substrate;
Preferably, the evaporating material on the surface of the substrate includes: sequentially and alternately evaporating the first evaporation material and the second evaporation material on the surface of the substrate;
preferably, the first vapor deposition material and/or the second vapor deposition material includes at least one of lead iodide, methylamine iodide, cesium iodide, and formamidine iodide;
preferably, the first vapor deposition material includes lead iodide, and the second vapor deposition material includes methylamine iodide.
10. The method of claim 7, wherein prior to the step of evaporating the evaporation material on the surface of the substrate, the method further comprises: vacuumizing the evaporation device;
preferably, the vacuum degree in the evaporation device is 10 -6～10-7 mbar;
Preferably, before the step of evaporating the evaporation material on the surface of the substrate, the method further includes: and heating the bearing plate to a specific temperature, and preserving heat, wherein the specific temperature is less than the evaporation temperature of the evaporation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411259446.6A CN118932296A (en) | 2024-09-09 | 2024-09-09 | Evaporation source assembly, evaporation device and evaporation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411259446.6A CN118932296A (en) | 2024-09-09 | 2024-09-09 | Evaporation source assembly, evaporation device and evaporation method |
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| Publication Number | Publication Date |
|---|---|
| CN118932296A true CN118932296A (en) | 2024-11-12 |
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| CN202411259446.6A Pending CN118932296A (en) | 2024-09-09 | 2024-09-09 | Evaporation source assembly, evaporation device and evaporation method |
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| Country | Link |
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| CN (1) | CN118932296A (en) |
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- 2024-09-09 CN CN202411259446.6A patent/CN118932296A/en active Pending
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