CN118900614A - Semiconductor refrigeration module and preparation method, refrigeration equipment - Google Patents

Abstract

The present invention provides a semiconductor refrigeration module and a preparation method and a refrigeration device, the method comprising: S1, providing a base; S2, preparing an insulating layer on the upper surface of the base; S3, preparing a first circuit layer on the upper surface of the insulating layer according to the thermal finite element analysis results of an external heat dissipation device; S4, connecting the cold end of the thermocouple pair on the first circuit layer through a stacked coupling eutectic process; S5, connecting the second circuit layer on the hot end of the thermocouple pair through a stacked coupling eutectic process; wherein, according to the thermal finite element analysis results of the external heat dissipation device, a grid is established, and according to the position of the thermocouple pair in the grid, a corresponding positive proportional relationship is established between the temperature gradient and the internal resistance of the thermocouple pair. The present invention maximizes the performance of each thermocouple pair, improves the refrigeration efficiency of the overall semiconductor refrigeration module, effectively solves the problem of hot spots of the heat carrier, and improves the heat removal effect of the hot end.

Description

Semiconductor refrigeration module and preparation method, refrigeration equipment

Technical Field

The present invention relates to the field of semiconductor refrigeration technology, and in particular to a semiconductor refrigeration module and a preparation method, and electronic equipment.

Background Art

The operation of semiconductor refrigeration chip is to use direct current, which can be used for both cooling and heating. By changing the polarity of direct current, cooling or heating can be achieved on the same refrigeration chip. This effect is produced by the principle of thermoelectricity. A refrigeration chip is composed of two ceramic chips, with N-type and P-type semiconductor materials (bismuth telluride) in between. The semiconductor elements are connected in series in the circuit. The working principle of semiconductor refrigeration chip is: when a piece of N-type semiconductor material and a piece of P-type semiconductor material are connected to form an electric couple, after the direct current is connected in this circuit, energy transfer can be generated. The current flows from the N-type element to the joint of the P-type element to absorb heat and become the cold end. The current flows from the P-type element to the joint of the N-type element to release heat and become the hot end. The amount of heat absorption and heat release is determined by the size of the current and the number of element pairs of semiconductor materials N and P. The inside of the refrigeration chip is a thermopile formed by several electric couplings to achieve the effect of enhancing cooling (heating).

However, for heat sources that need to dissipate heat, the temperature distribution on their surfaces is uneven, and the heat dissipation requirements of different parts are therefore different. This makes the design and manufacturing of semiconductor refrigeration modules more difficult. At the same time, heat sources with uneven temperatures will also cause uneven temperature distribution on the surface of semiconductor refrigeration modules, which is not conducive to further cooling and heat dissipation. Existing heat dissipation processing technologies also have the problems of high cost and complex structure, such as the use of VC and 3DVC.

Summary of the invention

In view of the defects in the prior art, the purpose of the present invention is to provide a semiconductor refrigeration module and a preparation method and refrigeration equipment.

A method for preparing a semiconductor refrigeration module according to the present invention comprises the following steps:

S1, providing a base 101;

S2, preparing an insulating layer 102 on the upper surface of the base 101;

S3. According to the thermal finite element analysis result of the external heat sink, a first circuit layer 104 is prepared on the upper surface of the insulating layer 102;

S4, connecting the cold end of the thermocouple pair 105 on the first circuit layer 104 through a stacked coupling eutectic process;

S5, connecting the second circuit layer 106 to the hot end of the thermocouple pair 105 through a stacked coupling eutectic process;

According to the thermal finite element analysis results of the external heat sink, a corresponding positive proportional relationship between the temperature gradient and the internal resistance of the thermocouple pair is established, and the resistance value of the thermocouple pair 105 corresponding to the higher the temperature area is, the higher the resistance value of the thermocouple pair 105 is.

Preferably, in the step S2, the insulating layer 102 is formed by a hard oxidation process.

Preferably, in step S3, the method of preparing the first circuit layer 104 includes:

A thermally conductive insulating adhesive is applied on the upper surface of the insulating layer 102 to form an insulating reinforced composite layer 103, and the circuit of the first circuit layer 104 is prepared on the motherboard through a molding process. Under a hot pressing composite process, the circuit on the motherboard is fixed to the insulating layer 102 through the insulating reinforced composite layer 103.

Preferably, in step S4, the circuit of the second circuit layer 106 is prepared on the motherboard through a molding process, and connected to the cold end of the thermocouple pair 105 through a stacked coupling eutectic process.

Preferably, the outer surface of the thermocouple pair 105 is coated with a nano-waterproof coating layer by vapor deposition of acrylic resin material.

Preferably, plasma cleaning and nitrogen cleaning are performed before step S4 and step S5, and steps S4 and S5 are performed in a vacuum environment.

Preferably, in step S4 and step S5, a eutectic layer 107 is formed between the first circuit layer 104 and the cold end of the thermocouple pair 105 and between the second circuit layer 106 and the hot end of the thermocouple pair 105 by a stacked coupled eutectic process.

Preferably, the thermocouple pairs 105 have the same height, and the thermocouple pairs 105 with different resistance values have different cross-sectional areas.

A semiconductor refrigeration module provided by the present invention is obtained by adopting the preparation method of the semiconductor refrigeration module.

A refrigeration device provided according to the present invention includes the semiconductor refrigeration module.

Compared with the prior art, the present invention has the following beneficial effects:

1. The present invention adopts a low-resistance thermocouple pair at a location with good external heat dissipation effect, and adopts a high-resistance thermocouple pair at a location with poor heat dissipation effect, so that the performance of each thermocouple pair can be brought into play to the extreme, the cooling efficiency of the overall semiconductor refrigeration module is improved, the hot spot problem of the heat carrier is effectively solved, and the heat removal effect of the hot end is improved.

2. The present invention can realize zero-defect eutectic of semiconductor refrigeration module, improve its service life and reduce its thermal resistance.

3. The semiconductor refrigeration module of the present invention can achieve waterproof, anti-corrosion and anti-electron migration effects, which is convenient for further improvement of design.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

FIG1 is a perspective view of a semiconductor refrigeration module;

FIG2 is a side view of a semiconductor refrigeration module;

FIG3 is a perspective view of a semiconductor refrigeration system;

FIG4 is a perspective view of a semiconductor refrigeration module;

FIG5 is a perspective view of a vacuum insulation housing;

FIG6 is a perspective view of a liquid cooling module;

FIG7 is a perspective view of a jet heat exchange module;

FIG. 8 is a perspective view of a stepped heat dissipation module.

DETAILED DESCRIPTION

The present invention is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several changes and improvements can also be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

Example 1

As shown in FIG. 1 and FIG. 2 , a method for preparing a semiconductor refrigeration module 11 includes the following steps:

S1. Provide a base 101. The base 101 may be an aluminum base, which is synthesized by aluminum extrusion and mechanical processing.

S2. Prepare an insulating layer 102 on the upper surface of the base 101 by a hard oxidation process.

S3. According to the thermal finite element analysis results of the external heat sink, a first circuit layer 104 is prepared on the upper surface of the insulating layer 102. The method of preparing the first circuit layer 104 includes: applying a thermally conductive insulating adhesive on the upper surface of the insulating layer 102 to form an insulating reinforced composite layer 103, preparing the circuit of the first circuit layer 104 on a motherboard through a molding process, and fixing the circuit on the motherboard to the insulating layer 102 through the insulating reinforced composite layer 103 under a hot pressing composite process.

Among them, a grid is established according to the results of the thermal finite element analysis of the external heat sink, and according to the position of the thermocouple pair in the grid, the higher the temperature area, the higher the resistance of the corresponding thermocouple pair 105 is set, and a corresponding positive proportional relationship is established between the temperature gradient and the internal resistance of the thermocouple pair, and the cross-sectional areas of thermocouple pairs 105 with different resistance values (internal resistance) are different. In other words, the space required for the connection position of the thermocouple pair 105 with a larger resistance value on the first circuit is smaller, and the space required for the connection position of the thermocouple pair 105 with a smaller resistance value is larger.

S4. Connect the cold end of the thermocouple pair 105 on the first circuit layer 104 through a stacked coupling eutectic process. The thermocouple pairs 105 have the same height. The outer surface of the thermocouple pair 105 is vapor-deposited with acrylic resin material to form a nano-waterproof coating layer, which plays a role in waterproofing, corrosion resistance, and electron migration resistance.

S5. Connect the second circuit layer 106 to the hot end of the thermocouple pair 105 through a stacked coupling eutectic process. The circuit of the second circuit layer 106 is also prepared on the motherboard through a molding process, and then connected to the cold end of the thermocouple pair 105 through a stacked coupling eutectic process.

Similarly, on the second circuit, the space required for the connection position of the thermocouple pair 105 with a larger resistance value is smaller, and the space required for the connection position of the thermocouple pair 105 with a smaller resistance value is larger.

Plasma cleaning and nitrogen cleaning are performed before step S4 and step S5, and steps S4 and S5 are performed in a vacuum environment. In step S4 and step S5, a eutectic layer 107 is formed between the first circuit layer 104 and the cold end of the thermocouple pair 105 and between the second circuit layer 106 and the hot end of the thermocouple pair 105 through a stacked coupled eutectic process.

Example 2

As shown in FIG. 1 and FIG. 2 , a semiconductor refrigeration module 11 is prepared by the method of Example 1, and specifically comprises: a base 101 , an insulating layer 102 , a first circuit layer 104 , a plurality of thermocouple pairs 105 and a second circuit layer 106 .

The insulating layer 102 is connected to the upper surface of the base 101 , the first circuit layer 104 is connected to the upper surface of the insulating layer 102 , the cold ends of the plurality of thermocouple pairs 105 are electrically connected to the first circuit layer 104 , and the second circuit layer 106 is electrically connected to the cold ends and hot ends of the thermocouple pairs 105 .

Since one end of the thermocouple pair 105 is a cold end, used to cool the object to be cooled, and the other end is a hot end, which will generate heat, other heat dissipation devices are usually required to dissipate heat from the hot end. For example, when a liquid cooling device is used to cool the end surface of a semiconductor heat dissipation module where the cold end is located, since the liquid flows from one side to the other, one side will have a good cooling effect due to sufficient heat exchange, while the other side will have a poor cooling effect due to the liquid having been heated up by heat exchange.

In response to this problem, in the present application, the resistance values of the thermocouple pairs 105 at different positions are arranged according to the thermal finite element analysis results of the external heat sink. The higher the temperature, the greater the resistance value of the corresponding thermocouple pair 105. The thermocouple pairs 105 with different resistance values are reflected in different cross-sectional sizes. The greater the resistance value, the smaller the cross-sectional area. The resistance value of the thermocouple pair 105 is gradually distributed from high to low, so that the performance of the thermocouple pair 105 can be brought into play to the extreme. The surface of the thermocouple pair 105 is formed by vapor deposition of acrylic resin material to form a nano-waterproof coating layer, which plays a role in waterproofing, corrosion resistance, and electron migration resistance.

In other embodiments, an insulation-reinforced composite layer 103 is further disposed on the upper surface of the insulation layer 102 , and the first circuit layer 104 is connected to the upper surface of the insulation layer 102 through the insulation-reinforced composite layer 103 .

The two ends of the thermocouple pair 105 are connected to the first circuit layer 104 and the second circuit layer 106 respectively through the eutectic process, so that eutectic layers 107 are formed between the two ends of the thermocouple pair 105 and the first circuit layer 104 and the second circuit layer 106 respectively. The thickness of the first circuit layer 104 is more than twice the thickness of the second circuit layer 106.

A temperature sensor may be provided in the base 101 to monitor the temperature in the semiconductor refrigeration module 11 .

Example 3

As shown in FIG3 , a semiconductor refrigeration system includes a semiconductor refrigeration module 1 and a liquid cooling module 2. The semiconductor refrigeration module 1 includes a semiconductor refrigeration module 11 and a vacuum insulation shell 12, and the liquid cooling module 2 includes a jet heat exchange structure 21 and a stepped heat dissipation structure 22.

As shown in FIG. 4 , the semiconductor refrigeration module 1 includes a semiconductor refrigeration module 11 and a vacuum insulation shell 12 .

As shown in FIG. 1 and FIG. 2 , the semiconductor refrigeration module 11 includes: a base 101 , an insulating layer 102 , a first circuit layer 104 , a plurality of thermocouple pairs 105 , and a second circuit layer 106 .

The insulating layer 102 is connected to the upper surface of the base 101 , the first circuit layer 104 is connected to the upper surface of the insulating layer 102 , the cold ends of the plurality of thermocouple pairs 105 are electrically connected to the first circuit layer 104 , and the second circuit layer 106 is electrically connected to the cold ends and hot ends of the thermocouple pairs 105 .

Since one end of the thermocouple pair 105 is a cold end, used to cool the object to be cooled, and the other end is a hot end, which will generate heat, other heat dissipation devices are usually required to dissipate heat from the hot end. For example, when a liquid cooling device is used to cool the end surface of a semiconductor heat dissipation module where the cold end is located, since the liquid flows from one side to the other, one side will have a good cooling effect due to sufficient heat exchange, while the other side will have a poor cooling effect due to the liquid having been heated up by heat exchange.

In response to this problem, in the present application, the resistance values of the thermocouple pairs 105 at different positions are arranged according to the thermal finite element analysis results of the external heat sink. The higher the temperature, the greater the resistance value of the corresponding thermocouple pair 105. The thermocouple pairs 105 with different resistance values are reflected in different cross-sectional sizes. The greater the resistance value, the smaller the cross-sectional area. The resistance value of the thermocouple pair 105 is gradually distributed from high to low, so that the performance of the thermocouple pair 105 can be brought into play to the extreme. The surface of the thermocouple pair 105 is formed by vapor deposition of acrylic resin material to form a nano-waterproof coating layer, which plays a role in waterproofing, corrosion resistance, and electron migration resistance.

In other embodiments, an insulation-reinforced composite layer 103 is further disposed on the upper surface of the insulation layer 102 , and the first circuit layer 104 is connected to the upper surface of the insulation layer 102 through the insulation-reinforced composite layer 103 .

The two ends of the thermocouple pair 105 are connected to the first circuit layer 104 and the second circuit layer 106 respectively through the eutectic process, so that eutectic layers 107 are formed between the two ends of the thermocouple pair 105 and the first circuit layer 104 and the second circuit layer 106 respectively. The thickness of the first circuit layer 104 is more than twice the thickness of the second circuit layer 106.

A temperature sensor 114 may be provided in the base 101 to monitor the temperature in the semiconductor refrigeration module 11 .

As shown in FIG5 , the vacuum insulation shell 12 has a storage space inside, and the thermoelectric module 11 is arranged in the storage space. Before the storage space is closed, it is first filled with microcapsule phase change material. The height of the microcapsule phase change material is below the top surface of the first circuit layer 104. Since the thickness of the first circuit layer 104 is large, more microcapsule phase change material can be filled, and then the microcapsule phase change material is covered by the cover plate 110. The microcapsule phase change material can quickly cool down the target to be cooled with a large amount of heat, thereby improving the cooling efficiency of the thermoelectric module 11. At the same time, since the resistance of the thermocouple pair 105 is different, the cooling effect of each thermocouple pair 105 is also different. The temperature at the bottom plate 108 can be made uniform by the microcapsule phase change material, so the cooling effect on the target to be cooled is also more uniform.

The vacuum insulation shell 12 includes: a bottom plate 108, a dam 109, a cover plate 110 and a nano-waterproof coating layer. The bottom plate 108 is used to connect the target to be refrigerated. A window 111 is provided on the bottom plate 108. The dam 109 is integrally formed with the bottom plate, and is arranged around the periphery of the window 111 and extends in the height direction of the bottom plate 108. The cover plate 110 is connected to the inner wall of the dam 109 to seal the microcapsule phase change material layer in the accommodation space below the cover plate 110. The nano-waterproof coating layer is filled in the accommodation space above the cover plate 110. Among them, the bottom plate 108 and the dam 109 have a vacuum layer inside for achieving thermal insulation. It prevents the thermoelectric module 11 from leaking cold and heat, and achieves rapid assembly.

A rivet post 112 is provided on the bottom plate 108 between the window 111 and the dam 109 , and a corresponding rivet post hole 113 is opened on the base 101 . The rivet post 112 and the rivet post hole 113 are connected by ultrasonic welding to achieve fixation between the semiconductor refrigeration module 11 and the vacuum insulation shell 12 .

As shown in FIG. 6 , the liquid cooling module 2 includes a jet heat exchange structure 21 and a stepped heat dissipation structure 22 .

As shown in FIG7 , a jet heat exchange structure 21 includes: a micro pump 201, a pipeline 202 and a heat exchange cavity 212. The heat exchange cavity 212 has a fluid passage inside, the input end of the heat exchange cavity 212 is connected to the output end of the micro pump 201, and the output end of the heat exchange cavity 212 is connected to the pipeline 202 in a one-to-one correspondence.

Specifically, the fluid passage includes: an inlet cavity 203, a boosting cavity 205, a Tesla valve group 204 and a second Tesla valve 206. The inlet cavity 203 is connected to the input end of the heat exchange cavity 212. The multiple boosting cavities 205 are connected to the output end of the heat exchange cavity 212 one by one through a forward-connected second Tesla valve 206. The Tesla valve group 204 includes multiple first Tesla valves connected in series, and each Tesla valve group 204 is reversely connected between the inlet cavity 203 and a boosting cavity 205.

The fluid entering the Tesla valve group 204 undergoes multiple oscillations and mixing under the action of the reversely connected first Tesla valve, so that the fluid can be evenly heated, and at the same time is gathered in the boosting chamber 205 for boosting. The forwardly connected second Tesla valve 206 has a certain acceleration effect. The cooperation between the second Tesla valve 206 and the output end of the small-diameter heat exchange chamber 212 forms a jet, which is then quickly discharged upward through the pipeline 202.

In order to allow the heat exchange cavity 212 to fully exchange heat with the target to be cooled, the jet heat exchange structure 21 also includes a coupling layer 211, which is connected to one side of the heat exchange cavity 212. The coupling layer 211 uses a PA target material to be physically deposited on the bottom surface of the heat exchange cavity 212 in the gas phase to form an ultra-thin flexible insulating film. Then, the boron nitride flaky microcrystalline solution is subjected to an ultrasonic spraying process to form a boron nitride film layer on the surface of the ultra-thin flexible insulating film. The boron nitride coating is pressed into the ultra-thin flexible insulating film through a vacuum hot pressing process. The hot pressing temperature is the Tg temperature of the PA material. The obtained coupling layer 211 has ultra-thin, high insulation, and high thermal conductivity, which can effectively relieve thermal stress and material expansion coefficient.

Generally, the input end of the heat exchange cavity 212 is not necessarily at the central axis position, therefore, the present invention designs the cross-sectional area of the inlet cavity 203 to be larger as it is closer to the input end of the heat exchange cavity 212. For example, the inlet cavity 203 is trapezoidal, and the input end of the heat exchange cavity 212 is connected to the bottom area of the trapezoid. This overcomes the problem of uneven fluid pressure entering each Tesla valve group 204.

Each boosting cavity 205 is connected to at least one Tesla valve group 204, which is used to gather the fluid output by the Tesla valve group 204 and play a certain pressurizing role. There are multiple boosting cavities 205, which are arranged in the width direction in the heat exchange cavity 212. The number of boosting cavities 205 is 3, and the more Tesla valve groups 204 are connected to the boosting cavity 205 in the middle, the larger the volume of the boosting cavity 205 in the middle is than the boosting cavities 205 on both sides.

As shown in FIG. 8 , a stepped heat dissipation structure includes: a stepped flow channel 207 , an upper fin 208 , a lower fin 209 and a manifold cavity 210 .

The upper surface of the stepped flow channel 207 is connected to a plurality of upper fins 208, and the lower surface of the stepped flow channel 207 is connected to a plurality of lower fins 209. The upper fins 208 have an extension extending into the stepped flow channel 207, and the extension has a preset distance from the inner lower surface of the stepped flow channel 207, and the preset distance may be 1-3 mm. Specifically, the upper fins 208 are connected to the upper surface of each step, and at least two upper fins 208 are connected to the upper surface of each step. The height of the end of the extension of each upper fin 208 is gradually reduced from the uppermost step to the lowermost step.

The manifold 210 is connected to the lowest step of the stepped flow channel 207 and is connected to the micro pump 201 as an output end of the stepped heat dissipation structure. The highest step of the stepped flow channel 207 is connected to the pipeline 202 as an input end.

The stepped flow channel 207 includes transverse flow channels and longitudinal flow channels connected in sequence. The fluid entering from the outside enters the stepped flow channel 207 from the uppermost step. Each transverse flow channel includes at least two extensions. The fluid can collide with the extension of the upper fin 208 on the uppermost step, and then flow to the next step through the longitudinal flow channel under the action of the liquid level difference, and continue to collide with the corresponding upper fin 208 in the transverse flow channel of the next step.

In other embodiments, each longitudinal flow channel includes at least two extension portions, and the fluid will come into contact with the corresponding extension portions when passing through the longitudinal flow channel.

In order to facilitate installation or packaging, the outer ends of the upper fins 208 are flush, and the outer ends of the lower fins 209 are flush.

In the description of the present application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various changes or modifications within the scope of the claims, which does not affect the essence of the present invention. In the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other arbitrarily.

Claims (10)

1. A method for preparing a semiconductor refrigeration module, characterized in that it comprises the steps of: S1. Provide a base (101); S2, preparing an insulating layer (102) on the upper surface of the base (101); S3. According to the thermal finite element analysis result of the external heat sink, a first circuit layer (104) is prepared on the upper surface of the insulating layer (102); S4, connecting the cold end of the thermocouple pair (105) on the first circuit layer (104) through a stacked coupling eutectic process; S5, connecting the second circuit layer (106) to the hot end of the thermocouple pair (105) through a stacked coupling eutectic process; According to the thermal finite element analysis results of the external heat sink, a corresponding positive proportional relationship between the temperature gradient and the internal resistance of the thermocouple is established. 2. The method for preparing a semiconductor refrigeration module according to claim 1, characterized in that in the step S2, the insulating layer (102) is formed by a hard oxidation process. 3. The method for preparing a semiconductor refrigeration module according to claim 1, characterized in that in step S3, the method for preparing the first circuit layer (104) comprises: A heat-conductive insulating adhesive is coated on the upper surface of the insulating layer (102) to form an insulating reinforced composite layer (103), the circuit of the first circuit layer (104) is prepared on a motherboard through a molding process, and the circuit on the motherboard is fixed to the insulating layer (102) through the insulating reinforced composite layer (103) under a hot pressing composite process. 4. The method for preparing a semiconductor refrigeration module according to claim 1, characterized in that in the step S5, the circuit of the second circuit layer (106) is prepared on the motherboard through a molding process, and the cold end of the thermocouple pair (105) is connected through a stacked coupling eutectic process. 5. The method for preparing a semiconductor refrigeration module according to claim 1, characterized in that the outer surface of the thermocouple pair (105) is formed with a nano-waterproof coating layer by vapor deposition of acrylic resin material. 6. The method for preparing a semiconductor refrigeration module according to claim 1, characterized in that plasma cleaning and nitrogen cleaning are performed before step S4 and step S5, and steps S4 and S5 are performed under a vacuum environment. 7. The method for preparing a semiconductor refrigeration module according to claim 1 is characterized in that, in the steps S4 and S5, a eutectic layer (107) is formed between the first circuit layer (104) and the cold end of the thermocouple pair (105), and between the second circuit layer (106) and the hot end of the thermocouple pair (105), respectively, through a stacked coupled eutectic process. 8. The method for preparing a semiconductor refrigeration module according to claim 1, characterized in that the thermocouple pairs (105) have the same height, and the thermocouple pairs (105) with different resistance values have different cross-sectional areas. 9. A semiconductor refrigeration module, characterized in that it is obtained by using the preparation method of the semiconductor refrigeration module according to any one of claims 1 to 8. 10. A refrigeration device, characterized by comprising the semiconductor refrigeration module according to claim 9.