CN118899291B - A power module suitable for parallel connection - Google Patents
A power module suitable for parallel connection Download PDFInfo
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- CN118899291B CN118899291B CN202411131435.XA CN202411131435A CN118899291B CN 118899291 B CN118899291 B CN 118899291B CN 202411131435 A CN202411131435 A CN 202411131435A CN 118899291 B CN118899291 B CN 118899291B
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- pole
- parallel
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- 239000004033 plastic Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本发明提供一种适于并联的功率模块。该功率模块包括：基板，基板的第一层为布线层，第二层为绝缘层；上桥臂，设置在布线层上，上桥臂包括至少一个功率芯片，且具有第一极和第二极；下桥臂，设置在布线层上，下桥臂包括至少一个功率芯片，且具有第三极和第四极；塑封体，罩设在布线层上，以将上桥臂和下桥臂包覆其中；相对于塑封体呈露出状态的DC+端子、DC‑端子、功率AC端子和并联AC端子，DC+端子与第一极相连，DC‑端子与第四极相连，功率AC端子同时与第二极和第三极相连，并联AC端子同时与第二极和第三极相连；上桥臂与并联AC端子之间的电流路径的长度小于上桥臂与功率AC端子之间的电流路径的长度。根据本发明，能够解决现有功率模块在并联使用时存在门极电压振荡现象的问题。
The present invention provides a power module suitable for parallel connection. The power module comprises: a substrate, the first layer of the substrate is a wiring layer, and the second layer is an insulating layer; an upper bridge arm, arranged on the wiring layer, the upper bridge arm comprises at least one power chip, and has a first pole and a second pole; a lower bridge arm, arranged on the wiring layer, the lower bridge arm comprises at least one power chip, and has a third pole and a fourth pole; a plastic package, a cover is arranged on the wiring layer to cover the upper bridge arm and the lower bridge arm therein; a DC+ terminal, a DC-terminal, a power AC terminal and a parallel AC terminal which are exposed relative to the plastic package, the DC+ terminal is connected to the first pole, the DC-terminal is connected to the fourth pole, the power AC terminal is connected to the second pole and the third pole at the same time, and the parallel AC terminal is connected to the second pole and the third pole at the same time; the length of the current path between the upper bridge arm and the parallel AC terminal is less than the length of the current path between the upper bridge arm and the power AC terminal. According to the present invention, the problem of gate voltage oscillation when the existing power module is used in parallel can be solved.
Description
Technical Field
The invention belongs to the technical field of power modules, and particularly relates to a power module suitable for parallel connection.
Background
At present, the power module is widely applied to various fields such as new energy automobiles, new energy power generation, smart grids, traffic electrification and the like. In some fields, such as controllers of new energy automobiles, there is a high requirement for the power of the power module. In order to meet the high power requirements of the corresponding application fields for the power modules, the parallel use of multiple power modules is a common solution. However, since the existing power module is not specifically designed for the AC side output, if the multi-power module is used in parallel, a gate voltage oscillation phenomenon occurs due to the inconsistency of the body diode of the power chip in the on-state characteristic and the reverse recovery characteristic, which seriously affects the reliability of the power module.
Disclosure of Invention
The invention aims to solve the problem that the gate voltage oscillation phenomenon exists when the existing power module is used in parallel.
In order to achieve the above object, the present invention provides a power module adapted for parallel connection, the power module comprising:
the substrate comprises a first layer, a second layer and a third layer, wherein the first layer of the substrate is a wiring layer, and the second layer is an insulating layer;
the upper bridge arm is arranged on the wiring layer, comprises at least one power chip and is provided with a first pole and a second pole;
The lower bridge arm is arranged on the wiring layer, comprises at least one power chip and is provided with a third pole and a fourth pole;
The plastic package body is covered on the wiring layer to cover the upper bridge arm and the lower bridge arm;
The DC+ terminal is connected with the first pole, the DC-terminal is connected with the fourth pole, the power AC terminal is simultaneously connected with the second pole and the third pole, and the parallel AC terminal is simultaneously connected with the second pole and the third pole;
The length of the current path between the upper leg and the parallel AC terminals is less than the length of the current path between the upper leg and the power AC terminals.
Alternatively, the plastic package body has a first end face and a second end face opposite in a first direction;
The DC-terminal extends out of the first end face from the inside of the plastic package body;
the power AC terminal extends out of the second end face from the inside of the plastic package body.
Alternatively, the upper bridge arm and the lower bridge arm are disposed opposite to each other in the first direction;
The upper bridge arm is close to the power AC terminal relative to the lower bridge arm;
The lower leg is proximate to the DC-terminal relative to the upper leg.
Optionally, the parallel AC terminals are exposed with respect to the upper surface of the plastic package body;
In the first direction, the parallel AC terminals are located between the power AC terminals and the upper leg.
Optionally, the parallel AC terminals are exposed with respect to the upper surface of the plastic package body;
In the first direction, the parallel AC terminals are located between the upper leg and the lower leg.
Optionally, the parallel AC terminals are exposed with respect to the upper surface of the plastic package body;
In the first direction, the parallel AC terminals are arranged in parallel with the upper bridge arm.
Optionally, the parallel AC terminals are conductive blocks beyond the upper surface of the plastic package body;
or the parallel AC terminals are formed on the wiring layer, and windows corresponding to the positions of the parallel AC terminals are arranged on the upper surface of the plastic package body.
Optionally, the upper bridge arm and the lower bridge arm each include N power chips;
when N is 1, the first pole is a first power electrode of the power chip in the upper bridge arm, the second pole is a second power electrode of the power chip in the upper bridge arm, the third pole is a first power electrode of the power chip in the lower bridge arm, and the fourth pole is a second power electrode in the lower bridge arm;
When N is greater than 1, the first pole is a common lead-out end of the first power electrodes of the N power chips in the upper bridge arm, the second pole is a common lead-out end of the second power electrodes of the N power chips in the upper bridge arm, the third pole is a common lead-out end of the first power electrodes of the N power chips in the lower bridge arm, and the fourth pole is a common lead-out end of the second power electrodes of the N power chips in the lower bridge arm.
Alternatively, the power chip is connected with the wiring layer through a first solder layer;
The second pole of the upper bridge arm is connected with the wiring layer through a metal sheet and a second welding material layer in sequence, or the second pole of the upper bridge arm is connected with the wiring layer through a metal sheet and a second welding material layer in sequence, the metal sheet is a part of a power AC terminal, or the second pole of the upper bridge arm is connected with the wiring layer through a binding line.
Optionally, the power module further includes:
And the signal terminal is exposed relative to the plastic package body.
Alternatively, a metal heat dissipation layer is provided on a side of the insulating layer remote from the wiring layer.
The invention has the beneficial effects that:
the power module suitable for parallel connection is designed with independent parallel connection AC terminals, and the through-flow distance from an upper bridge arm to the parallel connection AC terminals is shorter than that from the upper bridge arm to the power AC terminals. When a plurality of power modules are used in parallel, each parallel AC terminal is connected by a copper bar, thereby forming a parallel path of low inductance. The parallel path with low inductance is formed, so that the amplitude of the induced voltage on the parasitic inductance of the power chip can be greatly reduced, and further the gate voltage oscillation risk caused by parallel use of multiple power modules can be effectively reduced. Therefore, the power module suitable for parallel connection can effectively solve the problem that the gate voltage oscillation phenomenon exists when the existing power module is used in parallel connection.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The invention may be better understood by referring to the following description in conjunction with the accompanying drawings in which the same or similar reference numerals are used throughout the several drawings to designate the same or similar components.
Fig. 1 shows a cross-sectional view of a power module adapted for parallel connection according to an embodiment of the invention;
FIG. 2 illustrates a top perspective view of a power module adapted for parallel connection in accordance with an embodiment of the present invention;
Fig. 3 shows a schematic structural diagram of a power module suitable for parallel connection according to an embodiment of the present invention, wherein the plastic package is not shown;
fig. 4 shows a schematic structural diagram of another power module suitable for parallel connection according to an embodiment of the present invention, wherein the plastic package is not shown;
FIG. 5 illustrates a top perspective view of yet another power module suitable for parallel connection in accordance with embodiments of the invention;
fig. 6 shows a schematic circuit diagram of a power module adapted for parallel connection according to an embodiment of the invention.
Detailed Description
In order that those skilled in the art will more fully understand the technical solutions of the present invention, exemplary embodiments of the present invention will be described more fully and in detail below with reference to the accompanying drawings. It should be apparent that the following description of one or more embodiments of the invention is merely one or more of the specific ways in which the technical solutions of the invention may be implemented and is not intended to be exhaustive. It should be understood that the technical solution of the present invention may be implemented in other ways belonging to one general inventive concept, and should not be limited by the exemplary described embodiments. All other embodiments, which may be made by one or more embodiments of the invention without inventive faculty, are intended to be within the scope of the invention.
Embodiment fig. 1 shows a cross-sectional view of a power module suitable for parallel connection according to an embodiment of the present invention, fig. 2 shows a top perspective view of a power module suitable for parallel connection according to an embodiment of the present invention, fig. 3 shows a schematic structure of a power module suitable for parallel connection according to an embodiment of the present invention, wherein a plastic package is not shown, and fig. 6 shows a schematic circuit diagram of a power module suitable for parallel connection according to an embodiment of the present invention.
Referring to fig. 1,2, 3 and 6, a power module suitable for parallel connection according to an embodiment of the present invention includes:
A substrate 100, wherein a first layer of the substrate 100 is a wiring layer 110, and a second layer is an insulating layer 120;
an upper bridge arm 200 disposed on the wiring layer 110, the upper bridge arm 200 including two power chips 210 and having a first pole 220 and a second pole 230;
The lower bridge arm 300 is arranged on the wiring layer 110, and the lower bridge arm 300 comprises two power chips 310 and is provided with a third pole 320 and a fourth pole 330;
The plastic package body 400 is covered on the wiring layer 110 to cover the upper bridge arm 200 and the lower bridge arm 300;
The dc+ terminal 510 is connected to the first pole 220, the DC-terminal 520 is connected to the fourth pole 330, the power AC terminal 530 is connected to the second pole 230 and the third pole 320 at the same time, and the parallel AC terminal 540 is connected to the second pole 230 and the third pole 320 at the same time;
the length of the current path between upper leg 200 and parallel AC terminal 540 is less than the length of the current path between upper leg 200 and power AC terminal 530.
Further, in the embodiment of the present invention, the plastic package body 400 has a first end face 410 and a second end face 420 opposite to each other in the first direction;
The DC-terminals 520 protrude from the inside of the plastic package 400 toward the first end surface 410;
the power AC terminal 530 protrudes from the interior of the plastic package 400 beyond the second end face 420.
Still further, in the embodiment of the present invention, the upper bridge arm 200 and the lower bridge arm 300 are oppositely disposed in the first direction;
Upper leg 200 is adjacent to power AC terminal 530 relative to lower leg 300;
lower leg 300 is adjacent DC-terminal 520 relative to upper leg 200.
Still further, in the embodiment of the present invention, the parallel AC terminals 540 are exposed with respect to the upper surface 430 of the plastic package 400;
In a first direction, parallel AC terminal 540 is located between power AC terminal 530 and upper leg 200.
Specifically, fig. 4 shows a top perspective view of another power module suitable for parallel connection in accordance with an embodiment of the present invention. Referring to fig. 4, in an alternative embodiment of the present invention, the parallel AC terminals 540 are exposed with respect to the upper surface 430 of the plastic package 400;
in a first direction, parallel AC terminals 540 are located between upper leg 200 and lower leg 300.
Specifically, as an alternative implementation, in the embodiment of the present invention, the parallel AC terminals 540 are exposed with respect to the upper surface 430 of the plastic package body 400;
In a first direction, parallel AC terminals 540 are arranged in parallel with upper leg 200, i.e., in this arrangement, parallel AC terminals 540 are disposed opposite and spaced from a first side of upper leg 200, or parallel AC terminals 540 are disposed opposite and spaced from a second side of upper leg 200, wherein the first side of upper leg 200 is opposite to the second side of upper leg 200 in a second direction that is perpendicular to the first direction.
Still further, in an embodiment of the present invention, the parallel AC terminals 540 are conductive blocks that extend beyond the upper surface 430 of the plastic package 400;
or the parallel AC terminals 540 are formed on the wiring layer 110, and windows corresponding to the positions of the parallel AC terminals 540 are provided on the upper surface 430 of the plastic package 400.
Specifically, in the embodiment of the present invention, if the parallel connection AC terminal 540 is implemented by a conductive block that exceeds the upper surface 430 of the plastic package 400, the conductive block is made of a conductive material such as copper, aluminum, copper-molybdenum alloy, or aluminum silicon carbide.
Specifically, referring to fig. 3 and 6, in the embodiment of the present invention, upper bridge arm 200 includes two power chips 210, and lower bridge arm 300 includes two power chips 310;
the first pole 220 is a common lead-out terminal of the first power electrodes of the two power chips 210 in the upper bridge arm 200, and the second pole 230 is a common lead-out terminal of the second power electrodes of the two power chips 210 in the upper bridge arm 200;
The third pole 320 is a common lead-out of the first power electrodes of the two power chips 310 in the lower bridge arm 300, and the fourth pole 330 is a common lead-out of the second power electrodes of the two power chips 310 in the lower bridge arm 300.
Specifically, the power chip adopted by the power module suitable for parallel connection in the embodiment of the invention may be one or more of a Diode chip (Diode chip), a metal oxide semiconductor field effect transistor chip (MOSFET chip), an insulated gate bipolar transistor chip (IGBT chip), a high electron mobility transistor chip (HEMT chip), a junction field effect transistor chip (JFET chip), a bipolar junction transistor chip (BJT chip) or a thyristor chip (SCR chip).
Specifically, in the embodiment of the present invention, if the power chips 210 and 310 are both MOSFET chips, the first pole 220 is a common lead-out terminal of the drains of the two power chips 210 in the upper bridge arm, the second pole 230 is a common lead-out terminal of the sources of the two power chips 210 in the upper bridge arm, the third pole 320 is a common lead-out terminal of the drains of the two power chips 310 in the lower bridge arm, and the fourth pole 330 is a common lead-out terminal of the sources of the two power chips 310 in the lower bridge arm.
Still further, referring to fig. 1 and 3, in the embodiment of the present invention, a power chip 310 in a lower bridge arm 300 is connected to a wiring layer 110 through a first solder layer 610;
The second pole 230 of the upper bridge arm 200 is connected to the wiring layer 110 sequentially through the metal sheet 531 and the second solder layer 630, the metal sheet 531 being a part of the power AC terminal 530;
the power chip 210 in the upper bridge arm 200 is connected to the wiring layer 110 through the third solder layer 620.
Specifically, as an alternative embodiment, in the embodiment of the present invention, the second pole 230 of the upper bridge arm 200 may be connected to the wiring layer 110 sequentially through the separate metal sheet and the second solder layer 630;
second pole 230 of upper bridge arm 200 may also be connected to wiring layer 110 by a bond wire, which is a wire-like conductive structure such as an aluminum wire, an aluminum ribbon, a copper wire, or a copper ribbon.
Specifically, in the embodiment of the present invention, the first solder layer 610 is a conductive connection material such as sintered silver, solder or conductive silver paste, the second solder layer 630 is a conductive connection material such as sintered silver, solder or conductive silver paste, and the third solder layer 620 is a conductive connection material such as sintered silver, solder or conductive silver paste.
Still further, referring to fig. 1, the power module according to the embodiment of the present invention further includes:
the signal terminal 550 is a solder terminal or a crimp terminal led out from the first end surface 410 or the second end surface 420 of the plastic package 400, with respect to the signal terminal 550 in the exposed state of the plastic package 400.
Specifically, in the embodiment of the present invention, the signal terminal 550 may be a welding terminal or a press-connection terminal that exceeds the upper surface 430 of the plastic package body 400, may be a conductive block that exceeds the upper surface 430 of the plastic package body 400, may be formed on the wiring layer 110, and is provided with a window corresponding to the signal terminal 550 at a corresponding position on the upper surface 430 of the plastic package body 400.
Specifically, in the embodiment of the present invention, the number of the parallel AC terminals 540 may be one or more than two, and when the number of the parallel AC terminals 540 is two, the arrangement manner of the parallel AC terminals 540 is shown in fig. 5.
Still further, in the embodiment of the present invention, the substrate 100 further includes a third layer, which is a metal heat dissipation layer, and the metal heat dissipation layer is disposed on a side of the insulating layer 120 away from the wiring layer 110.
Specifically, in the embodiment of the invention, the insulating layer is made of insulating materials such as aluminum oxide, aluminum nitride, zirconium oxide, silicon nitride, epoxy resin or organic silicon.
Although one or more embodiments of the present invention have been described above, it will be appreciated by those of ordinary skill in the art that the invention can be embodied in any other form without departing from the spirit or scope thereof. The above-described embodiments are therefore intended to be illustrative rather than limiting, and many modifications and substitutions will now be apparent to those of ordinary skill in the art without departing from the spirit and scope of the present invention as defined in the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411131435.XA CN118899291B (en) | 2024-08-18 | 2024-08-18 | A power module suitable for parallel connection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411131435.XA CN118899291B (en) | 2024-08-18 | 2024-08-18 | A power module suitable for parallel connection |
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| Publication Number | Publication Date |
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| CN118899291A CN118899291A (en) | 2024-11-05 |
| CN118899291B true CN118899291B (en) | 2025-02-25 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206059378U (en) * | 2016-06-17 | 2017-03-29 | 扬州国扬电子有限公司 | A kind of compact type full bridge power module |
| CN217590625U (en) * | 2022-04-12 | 2022-10-14 | 致瞻科技(上海)有限公司 | Power semiconductor module with parallel structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101263547A (en) * | 2005-06-24 | 2008-09-10 | 国际整流器公司 | Semiconductor half-bridge module with low inductance |
| EP4089907A1 (en) * | 2021-05-10 | 2022-11-16 | Hitachi Energy Switzerland AG | Three-phase inverter power module and three-phase inverter power device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206059378U (en) * | 2016-06-17 | 2017-03-29 | 扬州国扬电子有限公司 | A kind of compact type full bridge power module |
| CN217590625U (en) * | 2022-04-12 | 2022-10-14 | 致瞻科技(上海)有限公司 | Power semiconductor module with parallel structure |
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| CN118899291A (en) | 2024-11-05 |
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