CN118868888B - A driving circuit, a driving device and a driving method - Google Patents
A driving circuit, a driving device and a driving method Download PDFInfo
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- CN118868888B CN118868888B CN202411321124.XA CN202411321124A CN118868888B CN 118868888 B CN118868888 B CN 118868888B CN 202411321124 A CN202411321124 A CN 202411321124A CN 118868888 B CN118868888 B CN 118868888B
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 146
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 129
- 238000001514 detection method Methods 0.000 claims abstract description 64
- 230000005669 field effect Effects 0.000 claims abstract description 50
- 238000002955 isolation Methods 0.000 claims description 37
- 238000004891 communication Methods 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AIXMJTYHQHQJLU-UHFFFAOYSA-N chembl210858 Chemical compound O1C(CC(=O)OC)CC(C=2C=CC(O)=CC=2)=N1 AIXMJTYHQHQJLU-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Junction Field-Effect Transistors (AREA)
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Abstract
本申请公开了一种驱动电路、驱动装置及驱动方法，涉及电源系统管理技术领域，该驱动电路包括：第一耗尽型氮化镓器件的漏极与高压输入电源连接，第一耗尽型氮化镓器件的源极与场效应晶体管的漏极连接，第一耗尽型氮化镓器件的栅极通过第一二极管与场效应晶体管的源极连接；检测触发模块的输入端与场效应晶体管的漏极连接，检测触发模块的输出端与逻辑驱动模块连接，检测触发模块连接隔离供电电源；逻辑驱动模块的输入端与控制器连接，逻辑驱动模块的输出端与第一耗尽型氮化镓器件的栅极连接，逻辑驱动模块连接供电电源以及隔离供电电源。本申请可充分发挥耗尽型氮化镓器件的通流能力。
The present application discloses a driving circuit, a driving device and a driving method, which relate to the technical field of power system management. The driving circuit comprises: the drain of a first depletion-type gallium nitride device is connected to a high-voltage input power supply, the source of the first depletion-type gallium nitride device is connected to the drain of a field effect transistor, and the gate of the first depletion-type gallium nitride device is connected to the source of the field effect transistor through a first diode; the input end of a detection trigger module is connected to the drain of the field effect transistor, the output end of the detection trigger module is connected to a logic driving module, and the detection trigger module is connected to an isolated power supply; the input end of the logic driving module is connected to a controller, the output end of the logic driving module is connected to the gate of the first depletion-type gallium nitride device, and the logic driving module is connected to the power supply and the isolated power supply. The present application can give full play to the flow capacity of depletion-type gallium nitride devices.
Description
Technical Field
The present application relates to the field of power system management technologies, and in particular, to a driving circuit, a driving device, and a driving method.
Background
In the power electronic system, the driving circuit is located between the power main circuit (i.e. the high-power transmission and conversion part) and the digital control core (such as a microcontroller, a DSP, etc. responsible for generating control signals), and is essentially used for amplifying the power of the PWM signal (Pulse Width Modulation, pulse width modulation signal) generated by the digital control core so as to drive the power switching device (such as an IGBT, a MOSFET, etc.) to turn on or off, thereby realizing accurate control of the current and the voltage in the power main circuit. The traditional depletion type gallium nitride is of a cascade structure, the driving circuit indirectly drives the depletion type gallium nitride to work through driving the power switch device, and the depletion type gallium nitride cannot be directly driven to work, so that the current passing capacity of the depletion type gallium nitride is limited.
Therefore, in order to fully exert the current passing capability of depletion gallium nitride, a driving circuit capable of directly driving a power switching device is demanded.
Disclosure of Invention
In view of the above-mentioned drawbacks or shortcomings of the related art, an object of the present application is to provide a driving circuit, a driving apparatus and a driving method, which can fully exert the current passing capability of a depletion type gallium nitride device.
In order to achieve the above object, the present application provides the following solutions:
In a first aspect, the application provides a driving circuit, which comprises a first depletion type gallium nitride device, a first diode, a field effect transistor, a detection trigger module and a logic driving module;
The drain electrode of the first depletion type gallium nitride device is connected with a high-voltage input power supply, the source electrode of the first depletion type gallium nitride device is connected with the drain electrode of the field effect transistor, the grid electrode of the first depletion type gallium nitride device is connected with the source electrode of the field effect transistor through the first diode, the input end of the detection trigger module is connected with the drain electrode of the field effect transistor, the output end of the detection trigger module is connected with the logic driving module, the detection trigger module is connected with an isolation power supply, the input end of the logic driving module is connected with a controller, the output end of the logic driving module is connected with the grid electrode of the first depletion type gallium nitride device, the logic driving module is connected with the power supply and the isolation power supply,
The detection triggering module is used for monitoring the voltage of the isolation power supply after the first depletion gallium nitride device is IN an off state and the detection triggering module is electrified, and sending a DRV signal to the logic driving module if the voltage value of the isolation power supply is greater than a second threshold value, wherein the logic driving module is used for responding to the DRV signal to be conducted with the power supply, processing a PWM IN signal sent by the received controller to obtain a PWM signal, and driving the first depletion gallium nitride device to be IN an on state or an off state by utilizing the PWM signal.
Optionally, the detection triggering module comprises a detection triggering functional unit and a switching tube, wherein the input end of the switching tube is connected with the detection triggering functional unit, the first output end of the switching tube is connected with the source electrode of the first depletion type gallium nitride device, the second output end of the switching tube is connected with the isolation power supply, and the switching tube is used for being in a conducting state when the voltage value of the isolation power supply is larger than the second threshold value, so that the detection triggering functional unit sends the DRV signal to the logic driving module.
The logic driving module comprises a first AND gate unit, a second AND gate unit, a first gate driver and a second gate driver, wherein a first input end of the first AND gate unit is connected with the detection triggering function unit, a second input end of the first AND gate unit is connected with the power supply, an output end of the first AND gate unit is connected with an input end of the first gate driver, an output end of the first gate driver is respectively connected with a gate of the field effect transistor and a first input end of the second AND gate unit, a second input end of the second AND gate unit is connected with the controller, an output end of the second AND gate unit is connected with an input end of the second gate driver, an output end of the second AND gate unit is connected with a gate of the first depletion gallium nitride device, the first AND gate unit is used for responding to the DRV signal to output a high-level signal, so that the output end of the first gate driver outputs a PWM signal, the second AND gate unit is IN a PWM (pulse width modulation) state, the second AND gate unit is IN a PWM state, and the PWM state is IN response to the PWM state, and the PWM state is IN which the second gate driver is IN a PWM state.
Optionally, the driving circuit further comprises a first isolation communication module and a second isolation communication module, wherein the first input end of the first and gate unit is connected with the detection triggering function unit through the first isolation communication module, and the output end of the second and gate unit is connected with the input end of the second gate driver through the second isolation communication module.
Optionally, the driving circuit further comprises a second diode and a second depletion gallium nitride device connected in parallel with the first depletion gallium nitride device, wherein a drain electrode of the second depletion gallium nitride device is connected with the high-voltage input power supply, a source electrode of the second depletion gallium nitride device is connected with a drain electrode of the field effect transistor, and a grid electrode of the second depletion gallium nitride device is connected with a source electrode of the field effect transistor through the second diode.
Optionally, the first depletion gallium nitride device and the second depletion gallium nitride device are both zero voltage when in an on state and negative voltage when in an off state.
Optionally, the field effect transistor is an NMOS transistor, and the switch transistor is an NMOS transistor or a PMOS transistor.
In a second aspect the application provides a drive device comprising a drive circuit as claimed in any one of the first aspects, the drive device being for use in a power electronics system.
The application provides a driving method which is applied to the driving circuit IN any one of the first aspect, and comprises the steps that after the first depletion type gallium nitride device is electrified, a drain voltage of the field effect transistor is larger than a first threshold value, the first depletion type gallium nitride device is IN an off state, the detection triggering module monitors the voltage of the isolation power supply after the first depletion type gallium nitride device is IN the off state and the detection triggering module is electrified, if the voltage value of the isolation power supply is larger than a second threshold value, a DRV signal is sent to the logic driving module, the logic driving module responds to the conduction of the DRV signal and the power supply, processes a PWM IN signal sent by the received controller to obtain a PWM signal, and drives the first depletion type gallium nitride device to be IN the on state or the off state by using the PWM signal.
Optionally, the logic driving module is IN conduction with the power supply IN response to the DRV signal, processes the received PWM IN signal sent by the controller to obtain a PWM signal, and drives the first depletion gallium nitride device to be IN a conduction state or a disconnection state by using the PWM signal, and the logic driving module comprises a first and gate unit IN response to the DRV signal, so that an output end of the first gate driver outputs a PWM EN signal to drive the field effect transistor to be IN a conduction state, and a second and gate unit IN response to the PWM EN signal, converts the PWM IN signal input by the controller to a PWM signal, and enables an output end of the second gate driver to output the PWM signal to directly drive the first depletion gallium nitride device to be IN a conduction state or a disconnection state.
According to the specific embodiment provided by the application, the application discloses the following technical effects:
The application provides a driving circuit, a driving device and a driving method, wherein the voltage of an isolated power supply is monitored through a detection trigger module, if the voltage value of the isolated power supply is larger than a second threshold value, a DRV signal is sent to a logic driving module, the logic driving module responds to the conduction of the DRV signal and the power supply, a PWM IN signal sent by a received controller is processed to obtain a PWM signal, and the PWM signal is utilized to directly drive a first depletion type gallium nitride device to be IN a conducting state or a switching-off state, namely, the direct driving of the first depletion type gallium nitride device is realized through the combination of the detection trigger module and the logic driving module, and the functions of zero voltage on and negative voltage off are realized under the condition that the control logic of the first depletion type gallium nitride device is not changed, so that the strong current capacity of the first depletion type gallium nitride device is fully exerted.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a driving circuit according to an embodiment of the application;
FIG. 2 is a schematic diagram of a driving circuit according to an embodiment of the present application;
FIG. 3 is a timing logic diagram of a driving circuit according to an embodiment of the application;
Fig. 4 is a schematic diagram of a specific structure of a driving circuit according to another embodiment of the present application;
fig. 5 is a schematic structural diagram of a driving device according to an embodiment of the present application;
fig. 6 is a flow chart of a driving method according to an embodiment of the application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The foregoing objects, features, and advantages of the application will be more readily apparent from the following detailed description of the application when taken in conjunction with the accompanying drawings and detailed description.
In the power electronic system, the driving circuit is located between the power main circuit (i.e. the high-power transmission and conversion part) and the digital control core (such as a microcontroller, a DSP, etc. responsible for generating control signals), and is essentially used for amplifying the power of the PWM signal (Pulse Width Modulation, pulse width modulation signal) generated by the digital control core so as to drive the power switching device (such as an IGBT, a MOSFET, etc.) to turn on or off, thereby realizing accurate control of the current and the voltage in the power main circuit. Conventional depletion gallium nitride is a cascading architecture under which the drive signals in the existing power supply main circuit and digital control core are usually positive voltages when on and zero voltages when off. The depletion type device is turned on when the grid voltage is zero, and turned off when the grid voltage is negative, namely, the depletion type device is opposite to the driving signal control mode, so that the driving circuit needs to indirectly drive the depletion type gallium nitride to work through driving the power switch device, and the depletion type gallium nitride cannot be directly driven to work, so that the depletion type gallium nitride cannot fully exert the self current capacity.
In order to solve the technical defects, the embodiment of the application provides a driving circuit which comprises a first depletion type gallium nitride device, a first diode, a field effect transistor, a detection trigger module and a logic driving module.
Specifically, referring to fig. 1, a drain D of a first depletion gallium nitride device D-GaN is connected to a high-voltage input power supply VDain, a source S of the first depletion gallium nitride device D-GaN is connected to a drain D of a field-effect transistor NMOS, and a gate G of the first depletion gallium nitride device D-GaN is connected to a source S of the field-effect transistor NMOS through a first diode Dsk. The input end of the detection trigger module 110 is connected with the drain electrode D of the field effect transistor NMOS, the output end of the detection trigger module 110 is connected with the logic driving module 120, and the detection trigger module 110 is connected with an isolation power supply ISO_VCC. The input end of the logic driving module 120 is connected with the controller, the output end of the logic driving module 120 is connected with the grid G of the first depletion type gallium nitride device D-GaN, and the logic driving module 120 is connected with a power supply VDD and an isolation power supply ISO_VCC.
The detection triggering module 110 is used for monitoring the voltage of the isolation power supply ISO_VCC after the first depletion gallium nitride device D-GaN is IN an off state and the detection triggering module 120 is powered on, if the voltage value of the isolation power supply ISO_VCC is larger than a second threshold value, a DRV signal, namely a DRV EN signal IN FIG. 1, is sent to the logic driving module 120, the logic driving module 120 is used for responding the DRV signal to be conducted with the power supply, the received PWM IN signal sent by the controller is processed to obtain a PWM signal, and the PWM signal is used for driving the first depletion gallium nitride device D-GaN to be IN the on state or the off state.
Further, referring to fig. 2, the detection triggering module 110 includes a detection triggering function unit and a switching tube K, wherein an input end of the switching tube K1 is connected with the detection triggering function unit, a first output end of the switching tube K is connected with a source electrode S of the first depletion gallium nitride device D-GaN, and a second output end of the switching tube K is connected with an isolation power supply iso_vcc. The switch tube K is used for being in a conducting state when the voltage value of the isolation power supply is larger than a second threshold value, so that the detection triggering functional unit sends a DRV signal to the logic driving module.
Specifically, the logic driving module includes a first and gate unit U1, a second and gate unit U2, a first gate driver U3, and a second gate driver U4. The first input end of the first AND gate unit U1 is connected with the detection trigger functional unit, the second input end of the first AND gate unit U1 is connected with the power supply VDD, the output end of the first AND gate unit U1 is connected with the input end of the first gate driver U3, the output end of the first gate driver U3 is respectively connected with the grid electrode of the field effect transistor NMOS and the first input end of the second AND gate unit U2, the second input end of the second AND gate unit U2 is connected with the controller, the output end of the second AND gate unit is connected with the input end of the second gate driver U4, and the output end of the second gate driver U4 is connected with the grid electrode G of the first depletion gallium nitride device D-GaN.
It is understood that the second gate driver U4 of the logic driving module 120 is connected to the power supply VDD and the isolated power supply iso_vcc, and the first gate driver U3, the first and gate unit U1, and the second and gate unit U2 of the logic driving module 120 are connected to the power supply VDD. The first AND gate unit U1 is used for responding to the DRV signal to output a high-level signal, so that the output end of the first gate driver U3 outputs a PWM EN signal to drive the field effect transistor NMOS to be IN a conducting state, and the second AND gate unit U2 is used for responding to the PWM EN signal to convert a PWM IN signal input by the controller into a PWM signal, so that the output end of the second gate driver U4 outputs the PWM signal to directly drive the first depletion type gallium nitride device D-GaN to be IN a conducting state or a switching-off state.
When the first gate driver U3 and the second gate driver U4 each output a high level signal, the high level voltage at this time is equal to the power supply voltage of the power supply VDD. The isolation power supply iso_vcc is connected to the source S of the first depletion gallium nitride device D-GaN, and when the output voltage of the second gate driver U4 is at a high level, the voltage at the high level is equal to the power supply voltage of the isolation power supply iso_vc, and at this time, the voltage between the gate G and the source S of the first depletion gallium nitride device D-GaN is equivalent to zero voltage.
Further, the driving circuit further includes a first isolated communication module 130 and a second isolated communication module 140. The first input end of the first and gate unit U1 is connected to the detection trigger function unit through the first isolation communication module 130, and the output end of the second and gate unit U2 is connected to the input end of the second gate driver U4 through the second isolation communication module 140.
In connection with fig. 3 and the above embodiments, it can be understood that when the high voltage input power supply VDain is powered on, the first depletion gallium nitride device D-GaN is in an on state, the field effect transistor NMOS is in an off state, the switch tube K is in an off state, when the drain voltage D of the field effect transistor NMOS rises to the gate threshold (first threshold) of the first depletion gallium nitride device D-GaN, the first depletion gallium nitride device D-GaN is in an off state, when the voltage VDD of the power supply is established and the voltage iso_vcc of the isolated power supply reaches the second threshold, the DRV signal is turned over, the switch tube K is turned on, and at the same time, the DRV signal is returned through the first isolation communication module (ISO 1) 130, so that the MOS EN signal is in a high level, the MOS EN signal and the voltage VDD of the power supply are output in a high level after passing through the two input and gate (first and gate unit U1), and then the first gate driver U3 makes the MOS EN signal in a high level. At this time, the field effect transistor N MOS is turned on, and at the same time, the PWM EN signal and the PWM IN signal are output as PWM signals through a two-input and gate (first and gate unit U1), and the PWM signals pass through the second gate driver U4 to directly drive the first depletion gallium nitride device D-GaN device.
When the high-voltage input power supply VDain is powered down, the voltage VDD of the power supply loses or the voltage iso_vcc of the isolated power supply is lower than the second threshold, the field effect transistor NMOS and the switching tube K are in an off state, the first depletion gallium nitride device D-GaN is also in an off state, and when the high-voltage input power supply VDain is smaller than Vth (e.g., 15V), the first depletion gallium nitride device D-GaN is restored to an on state.
It should be noted that, the field effect transistor may be an NMOS transistor, and the switch transistor K may be an NMOS transistor or a PMOS transistor. The first threshold value and the second threshold value may be the same or different, and if the first threshold value and the second threshold value are the same, the value range of the first threshold value and the second threshold value is-15 to 25V.
In another exemplary embodiment of the present application, the driving circuit further includes a second diode and a second depletion gallium nitride device connected in parallel with the first depletion gallium nitride device, based on the above-described embodiment.
Specifically, referring to fig. 4, the first depletion gallium nitride device D-GaN1 of the above embodiment is connected in parallel with the second depletion gallium nitride device D-GaN2, the drain D of the second depletion gallium nitride device D-GaN2 is connected to the high-voltage input power supply VDain, the source S of the second depletion gallium nitride device D-GaN2 is connected to the drain D of the field-effect transistor NMOS, and the gate G of the second depletion gallium nitride device D-GaN2 is connected to the source S of the field-effect transistor NMOS through the second diode Dsk 2.
It can be understood that the first depletion gallium nitride device D-GaN1 and the second depletion gallium nitride device D-GaN2 share a field effect transistor nmos, share an iso_vcc detection trigger function unit and a switching tube K, and drive the first depletion gallium nitride device D-GaN1 and the second depletion gallium nitride device D-GaN2 simultaneously after the PWM signal passes through the second gate driver U4.
It should be noted that, in the embodiments of the present application, only two parallel applications of depletion gallium nitride devices are shown, and only the parallel applications in a high-power system are illustrated. In other embodiments, a plurality of the same thing may be connected in parallel, and the embodiments of the present application will not be described again. And the first depletion type gallium nitride device and the second depletion type gallium nitride device are both zero voltage when in an on state and are negative voltage when in an off state.
The logic driving module responds to the conduction of the DRV signal and the power supply, processes the PWM IN signal sent by the received controller to obtain a PWM signal, and directly drives the first depletion type gallium nitride device to be IN a conducting state or a switching-off state by utilizing the PWM signal, namely, the direct driving of the first depletion type gallium nitride device is realized by combining the detection triggering module and the logic driving module, and the functions of zero voltage on and negative voltage off are realized under the condition of not changing the control logic of the first depletion type gallium nitride device, so that the strong current capacity of the first depletion type gallium nitride device can be fully exerted.
Based on the same inventive concept, the embodiment of the application also provides a driving device for realizing the driving circuit. The implementation of the solution provided by the device is similar to that described in the driving circuit, so the specific limitation of one or more driving device embodiments provided below may be referred to the limitation of the driving circuit hereinabove, and will not be repeated here.
In an exemplary embodiment, as shown in fig. 5, a schematic structural diagram of a driving apparatus is provided. The driving device is applied to a power electronic system and comprises a driving circuit, wherein the driving circuit comprises a first depletion type gallium nitride device, a first diode, a field effect transistor, a detection trigger module and a logic driving module.
Specifically, the drain electrode of the first depletion type gallium nitride device is connected with a high-voltage input power supply, the source electrode of the first depletion type gallium nitride device is connected with the drain electrode of the field effect transistor, the grid electrode of the first depletion type gallium nitride device is connected with the source electrode of the field effect transistor through the first diode, the input end of the detection trigger module is connected with the drain electrode of the field effect transistor, the output end of the detection trigger module is connected with the logic driving module, the detection trigger module is connected with an isolation power supply, the input end of the logic driving module is connected with the controller, the output end of the logic driving module is connected with the grid electrode of the first depletion type gallium nitride device, and the logic driving module is connected with the power supply and the isolation power supply.
The detection triggering module is used for monitoring the voltage of the isolation power supply after the first depletion gallium nitride device is IN an off state and the detection triggering module is electrified, if the voltage value of the isolation power supply is greater than a second threshold value, a DRV signal is sent to the logic driving module, the logic driving module is used for responding to the DRV signal and the power supply to be conducted, the received PWM IN signal sent by the controller is processed to obtain a PWM signal, and the PWM signal is used for driving the first depletion gallium nitride device to be IN an on state or an off state.
The detection triggering module comprises a detection triggering function unit and a switching tube, wherein the input end of the switching tube is connected with the detection triggering function unit, the first output end of the switching tube is connected with the source electrode of the first depletion type gallium nitride device, the second output end of the switching tube is connected with an isolation power supply, and the switching tube is used for being in a conducting state when the voltage value of the isolation power supply is larger than a second threshold value so that the detection triggering function unit can send a DRV signal to the logic driving module.
The logic driving module comprises a first AND gate unit, a second AND gate unit, a first gate driver and a second gate driver, wherein a first input end of the first AND gate unit is connected with a detection triggering function unit, a second input end of the first AND gate unit is connected with a power supply, an output end of the first AND gate unit is connected with an input end of the first gate driver, an output end of the first gate driver is respectively connected with a gate electrode of a field effect transistor and a first input end of the second AND gate unit, a second input end of the second AND gate unit is connected with a controller, an output end of the second AND gate unit is connected with an input end of the second gate driver, an output end of the second gate driver is connected with a gate electrode of a first depletion type gallium nitride device, the first AND gate unit is used for responding to a DRV signal to output a high-level signal, an output end of the first gate driver is used for outputting a PWM EN signal to drive the field effect transistor to be IN an on state, and the second AND gate unit is used for responding to the EN signal to convert the PWM IN signal input by the controller into the PWM IN signal to enable the second gate electrode to be IN an off state or the PWM driving state.
As an optional implementation mode, the driving circuit further comprises a first isolation communication module and a second isolation communication module, wherein the first input end of the first AND gate unit is connected with the detection trigger function unit through the first isolation communication module, and the output end of the second AND gate unit is connected with the input end of the second gate driver through the second isolation communication module.
The driving circuit further comprises a second diode and a second depletion type gallium nitride device connected with the first depletion type gallium nitride device in parallel, wherein the drain electrode of the second depletion type gallium nitride device is connected with a high-voltage input power supply, the source electrode of the second depletion type gallium nitride device is connected with the drain electrode of the field effect transistor, and the grid electrode of the second depletion type gallium nitride device is connected with the source electrode of the field effect transistor through the second diode.
As an alternative embodiment, the first depletion type gallium nitride device and the second depletion type gallium nitride device are both zero voltage when in on state and negative voltage when in off state.
As an optional implementation manner, the field effect transistor is an NMOS transistor, and the switching transistor is an NMOS transistor or a PMOS transistor.
By adopting the driving device, the direct driving of the first depletion type gallium nitride device can be realized through the combination of the detection triggering module and the logic driving module, and the functions of zero-voltage on and negative-voltage off are realized under the condition of not changing the control logic of the first depletion type gallium nitride device, so that the strong current capacity of the first depletion type gallium nitride device is fully exerted.
Based on the same inventive concept, the embodiment of the application also provides a driving method for realizing the driving circuit. The implementation of the solution to the problem provided by the method is similar to that described in the above driving, so the specific limitation in one or more driving method embodiments provided below may be referred to the limitation of the driving circuit hereinabove, and will not be repeated here.
In an exemplary embodiment, as shown in fig. 6, a flow diagram of a driving method is provided. The driving method may include steps S610 to S630, specifically:
Step S610, after the first depletion type gallium nitride device is powered on, the drain voltage of the field effect transistor is larger than a first threshold value, so that the first depletion type gallium nitride device is in an off state;
Step S620, after the detection triggering module is in an off state and the detection triggering module is electrified, monitoring the voltage of the isolation power supply, and if the voltage value of the isolation power supply is greater than a second threshold value, sending a DRV signal to the logic driving module;
IN step S630, the logic driving module responds to the DRV signal and the power supply to conduct, processes the PWM IN signal sent by the received controller to obtain a PWM signal, and drives the first depletion gallium nitride device to be IN the on state or the off state by using the PWM signal.
The step S630 may specifically further include the first and gate unit outputting a high level signal IN response to the DRV signal, so that the output end of the first gate driver outputs a PWM EN signal to drive the field effect transistor to be IN a conducting state, and the second and gate unit converting the PWM IN signal input by the controller into a PWM signal IN response to the PWM EN signal, so that the output end of the second gate driver outputs the PWM signal to directly drive the first depletion gallium nitride device to be IN a conducting state or a shutdown state.
The logic driving module responds to the conduction of the DRV signal and the power supply, processes the PWM IN signal sent by the received controller to obtain a PWM signal, and directly drives the first depletion type gallium nitride device to be IN a conducting state or a switching-off state by utilizing the PWM signal, namely, the direct driving of the first depletion type gallium nitride device is realized by combining the detection triggering module and the logic driving module, and the functions of zero voltage on and negative voltage off are realized under the condition of not changing the control logic of the first depletion type gallium nitride device, so that the strong current capacity of the first depletion type gallium nitride device can be fully exerted.
The above description is only illustrative of the preferred embodiments of the present application and of the principles of the technology employed. It will be appreciated by persons skilled in the art that the scope of the application referred to in the present application is not limited to the specific combinations of the technical features described above, but also covers other technical features formed by any combination of the technical features described above or their equivalents without departing from the inventive concept. Such as the above-mentioned features and the technical features disclosed in the present application (but not limited to) having similar functions are replaced with each other.
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| CN115996050A (en) * | 2023-03-23 | 2023-04-21 | 江苏能华微电子科技发展有限公司 | Depletion type GaN device direct-drive circuit |
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