CN118809433A - Semiconductor polishing equipment - Google Patents

Abstract

The present invention relates to the field of semiconductor technology, and provides a semiconductor polishing device, comprising: a shell, and a polishing module and an edge washing module located in the shell; the polishing module is used to flatten the surface of a wafer; the edge washing module is used to process the edge position of the wafer surface to remove the metal layer at the edge position of the wafer surface. The above-mentioned semiconductor polishing device integrates a polishing module and an edge washing module, and the setting of the edge washing module can improve the condition of the wafer edge. Therefore, before the polishing module is polished, an edge washing process can be added through the edge washing module to remove the metal layer at the edge of the wafer, which can prevent the metal layer at the edge of the wafer from falling off during the polishing process and scratching the wafer surface, which helps to improve the comprehensive performance of the polishing device.

Description

Semiconductor polishing equipment

Technical Field

The present invention relates to the field of semiconductor technology, and in particular to a semiconductor polishing device.

Background Art

In the metal gate last (High-KLast) process, metal gate chemical mechanical planarization (MGCMP) is required to accurately control the gate height and surface flatness of the wafer.

The existing planarization method is to directly use the grinding pad in the grinding table with chemical liquid. During the grinding process, scratches usually appear on the surface of the wafer, which is caused by metal peeling during the grinding process. When grinding to the interface at the top of the gate, the metal layer (such as the aluminum deposition layer) peels off from the oxide layer and the silicon nitride layer, causing the byproducts of metal peeling to rotate at high speed during the grinding process as the grinding disk and the wafer rotate, thereby scratching the surface of the wafer. Through the microscope magnification image and energy dispersive spectrometer (EDS) analysis, it can be seen that the metal layer at the edge of the existing wafer is intermittent. Therefore, the position where metal peeling is most likely to occur is the edge of the wafer. Due to factors such as the manufacturing process, the wafer edge has a more complicated wafer layer and a rougher surface, which makes it more likely for metal peeling to occur.

In order to improve the phenomenon of scratches generated during the above-mentioned wafer grinding process, the present invention provides a semiconductor grinding device.

Summary of the invention

The invention provides a semiconductor polishing device, which is integrated with an edge cleaning module. The metal layer at the edge of the wafer surface can be removed by the edge cleaning module, thereby improving the scratch phenomenon caused by the shedding of the metal layer during the wafer flattening process.

The semiconductor polishing equipment comprises: a housing, and a polishing module and an edge washing module located in the housing;

The grinding module is used to flatten the surface of the wafer;

The edge cleaning module is used to process the edge position of the wafer surface to remove the metal layer at the edge position of the wafer surface.

Optionally, the edge washing module includes an edge washing table and an edge washing member;

The edge cleaning table is used to carry and fix the wafer to be edge cleaned;

The edge cleaning member is used to remove the metal layer at the edge position of the wafer on the edge cleaning table.

Optionally, the edge washing module further comprises a cleaning member, and the cleaning member is used to pass a cleaning liquid into the surface of the wafer to clean the wafer after edge washing.

Optionally, the edge washing module further comprises a cleaning piece, which is arranged to move relative to the edge washing table, and is used to contact and move relatively with the surface of the wafer on the edge washing table to clean particles on the surface of the wafer after edge washing.

Optionally, the edge cleaning member is used to provide a chemical liquid to the edge of the wafer to corrode and remove the metal layer at the edge of the wafer.

Optionally, the edge washing table has a bearing surface, which is used to bear and fix the wafers to be washed. The edge washing table is rotatable, and the rotation axis of the edge washing table is perpendicular to the bearing surface. The radial distance between the liquid outlet of the edge washing component and the rotation axis of the edge washing table is a set distance.

Optionally, the edge washing member is movably arranged along a direction perpendicular to the bearing surface.

Optionally, when the edge washing module includes a cleaning piece, the cleaning piece is arranged to move in a direction perpendicular to the bearing surface, and the radial distance between the cleaning piece and the rotation center axis of the edge washing table is equal to the radial distance between the liquid outlet of the edge washing piece and the rotation center axis of the edge washing table.

Optionally, the semiconductor polishing equipment further comprises a cleaning module, wherein the cleaning module is located in the housing and is used for cleaning the wafer after planarization.

Optionally, the edge washing module is located between the grinding module and the cleaning module;

And/or, the edge washing module and the cleaning module are arranged adjacent to the grinding module.

With such configuration, the above-mentioned semiconductor polishing equipment integrates a polishing module and an edge cleaning module. The setting of the edge cleaning module can improve the wafer edge condition. Therefore, before the polishing module is polished, an edge cleaning process can be added through the edge cleaning module to remove the metal layer at the edge of the wafer, which can prevent the metal layer at the edge of the wafer from falling off during the polishing process and scratching the wafer surface.

Moreover, the setting of the above-mentioned edge cleaning module can completely remove the metal peeling source at the edge of the wafer. There is no metal element residue before and after grinding, and the consistency of wafer edge performance is improved. Since the metal peeling source is completely removed, the scratch condition of the wafer can be improved by more than 95%, and the peeling metal particles that affect the yield are reduced to 0, which also helps to improve product yield and reliability. In addition, this method improves the edge condition of the wafer, which can not only improve the defects of the wafer during the grinding process, but also improve the defects of the wafer in the subsequent process.

The edge washing module is set up, on the one hand, to optimize the process steps, and on the other hand, the edge washing module is integrated into the grinding equipment to improve the comprehensive performance of the grinding equipment, making it more controllable, and helping to reduce the production cost of wafers, improve the yield and thus increase production capacity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic top view of a semiconductor polishing device according to some embodiments of the present invention;

FIG. 2 is a schematic diagram of the structure of an edge washing module according to some embodiments of the present invention.

Among them, in the attached drawings:

10- housing;

20-grinding module; 21-grinding table; 22-grinding pad; 23-grinding head; 24-grinding frame; 25-grinding pad regulator; 26-grinding liquid supply unit;

30-edge washing module; 31-edge washing table; 311-bearing surface; 312-rotating shaft; 32-edge washing part; 33-cleaning part; 34-sweeping part;

40-cleaning module;

50-wafer;

a-Rotation center axis.

DETAILED DESCRIPTION

As used in the invention, the singular forms "one", "a", and "the" include plural objects, the term "or" is usually used to include the meaning of "and/or", the term "several" is usually used to include the meaning of "at least one", and the term "at least two" is usually used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", and "third" can explicitly or implicitly include one or at least two of the features. In addition, as used in the invention, "installed", "connected", "connected", and one element "set" to another element should be understood in a broad sense, usually only indicating that there is a connection, coupling, matching or transmission relationship between the two elements, and the connection, coupling, matching or transmission between the two elements can be direct or indirect through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below or on one side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the figures, with the upward or upper direction toward the top of the corresponding figure, and the downward or lower direction toward the bottom of the corresponding figure.

The present invention provides a semiconductor polishing device, comprising: a housing 10 , and a polishing module 20 , an edge cleaning module 30 , and a cleaning module 40 located in the housing 10 .

The grinding module 20 is used to flatten the surface of the wafer;

The edge cleaning module 30 is used to process the edge position of the wafer surface to remove the metal layer at the edge position of the wafer surface;

The cleaning module 40 is used to clean the wafer after planarization.

Based on different usage requirements, the edge washing operation of the edge washing module 30 can be performed before, during, or after the grinding process of the grinding module 20 .

Please refer to Figure 1, the shell 10 is approximately a rectangular structure, the grinding module 20, the edge washing module 30 and the cleaning module 40 are arranged along the length direction of the shell 10, and the edge washing module 30 is located between the grinding module 20 and the cleaning module 40. Preferably, isolation parts are set between the grinding module 20 and the edge washing module 30 and between the edge washing module 30 and the cleaning module 40, so that the working spaces of the three are relatively independent and do not interfere with each other.

In other alternative embodiments, only the grinding module 20 and the edge washing module 30 may be disposed in the housing 10 .

Please continue to refer to FIG. 1 , the grinding module 20 includes a grinding table 21 , a grinding pad 22 , a grinding head 23 , a grinding frame 24 , a grinding pad regulator 25 and a grinding liquid supply unit 26 . The grinding pad 22 is disposed on the grinding table 21 , and the grinding head 23 is disposed on the grinding frame 24 .

The grinding frame 24 is a cross, and a grinding head 23 is installed at each of the four ends of the grinding frame 24. The grinding head 23 generally includes a carrier head and a driving member. The carrier head is used to hold the wafer, and the driving member is used to drive the carrier head to rotate, thereby driving the wafer to rotate.

The middle part of the grinding frame 24 is rotatably mounted in the housing 10, and the rotation center axis of the grinding frame 24 extends vertically, and the rotation center axis of the grinding frame 24 passes through the cross point of the grinding frame 24. When the grinding frame 24 is driven to rotate, the corresponding four grinding heads 23 will rotate adaptively to switch the working position.

The polishing pad 22 is fixedly arranged on the upper surface of the polishing table 21. In addition, the polishing table 21 is rotatably installed in the housing 10 via a rotating shaft. Therefore, the polishing pad 22 can rotate along with the polishing table 21. The surface of the polishing pad 22 has countless foamed micropores for carrying a mixed polishing liquid containing abrasives and chemicals. The polishing liquid supply unit 26 is arranged above the polishing table 21, and the polishing liquid supply unit 26 is used to supply the polishing liquid to the polishing pad 22.

The polishing pad adjuster 25 is rotatably disposed in the housing 10, and the polishing pad adjuster 25 can be rotated to the top of the polishing pad 22 or rotated to the outside of the polishing pad adjuster 25. The polishing pad adjuster 25 is used to perform fine cutting on the surface of the polishing pad 22 to adjust the roughness of the polishing pad 22 and ensure a better polishing effect. When the polishing pad adjuster 25 is rotated to the top of the polishing pad 22, a predetermined pressure can be applied to the surface of the polishing pad 22 for fine cutting.

Please continue to refer to FIG. 1 , the grinding pad 22 and the grinding table 21 constitute a grinding assembly.

In this embodiment, three groups of grinding components are provided. The three groups of grinding components are circumferentially arranged around the rotation center axis of the grinding frame 24 , and the three groups of grinding components correspond to three grinding heads 23 , respectively. The grinding heads 23 are located above the grinding pad 22 .

The grinding head 23 is movably mounted on the grinding frame 24 or the grinding frame 24 is movably mounted in the housing 10. During the grinding process of the above-mentioned grinding equipment, the grinding head 23 first grasps the wafer and rotates to the top of the grinding pad 22 of a grinding assembly, and the grinding head 23 rotates and moves downward, so that the wafer contacts the grinding pad 22, and the wafer rotates with the grinding head 23. At the same time, the grinding table 21 drives the grinding pad 22 to rotate, and the rotation direction of the grinding head 23 is opposite to that of the grinding table 21. The grinding of the wafer is achieved through the relative movement of the wafer and the grinding pad 22.

For some wafers, the grinding accuracy requirements are relatively high. During the grinding process, rough grinding, semi-finishing and fine grinding are involved. Therefore, in this embodiment, four grinding heads 23 are matched with three grinding components (a grinding pad 22 and a grinding table 21 constitute a grinding component) to realize the above-mentioned grinding processes. As shown in Figure 1, one of the grinding heads 23 is located outside the three grinding components, and the grinding head 23 is used for unloading after grinding and loading before grinding. The other three grinding heads 23 correspond to three grinding components respectively. Taking the counterclockwise circumference as an example, the three grinding components correspond to rough grinding, semi-finishing and fine grinding respectively. After each grinding process is completed, the grinding frame 24 is driven to rotate 90° counterclockwise, so that each grinding head 23 rotates to the next station. When the grinding frame 24 rotates, loading and unloading, rough grinding, semi-finishing and fine grinding can be realized in sequence. The four grinding heads 23 cooperate with the three grinding components, and each grinding head 23 can correspond to loading and unloading, rough grinding, semi-finishing and fine grinding processes at the same time. Each process can be carried out synchronously, which is conducive to improving the grinding efficiency.

The grinding equipment in this embodiment adopts a structure of a cross grinding frame 24 with four grinding heads 23 and three grinding assemblies. In other alternative embodiments, the grinding frame 24 can also adopt a multi-degree-of-freedom mechanical arm structure, and the number of grinding heads 23 and grinding assemblies can be adaptively adjusted based on grinding requirements.

The components of the grinding device, such as the grinding table 21, the grinding pad 22, the grinding head 23, the grinding frame 24, the grinding pad regulator 25 and the grinding liquid supply part 26, are all used in existing grinding devices and will not be described in detail here.

In this embodiment, the edge washing module 30 is independently provided from the grinding module 20. In other alternative embodiments, the edge washing module 30 may be integrated into the grinding module 20, for example, one of the grinding components is replaced with the edge washing module 30, and during the rotation of the grinding frame 24, the wafer may be switched between the grinding component and the edge washing module 30.

In this embodiment, the edge washing module 30 is located between the grinding module 20 and the cleaning module 40. In other alternative implementations, the edge washing module 30 and the cleaning module 40 may be disposed adjacent to the grinding module 20. That is, the edge washing module 30 and the cleaning module 40 may be disposed around the grinding module 20, with the grinding module 20 as the center, so as to facilitate the transfer of wafers between the grinding module 20 and the cleaning module 40, and also facilitate the transfer of wafers between the grinding module 20 and the edge washing module 30.

In this embodiment, the cleaning module 40 may use multiple water spray heads to spray water upward to flush the wafers being transported. The cleaning module 40 is a prior art, and the cleaning module 40 may be consistent with the existing structure, which will not be described in detail here.

Please continue to refer to FIG. 1 , the edge washing module 30 includes an edge washing table 31 and an edge washing member 32 ;

The edge cleaning table 31 is used to carry and fix the wafers to be edge cleaned. As shown in FIG1 , the cleaning table 31 is disc-shaped, and the axial direction of the cleaning table 31 extends vertically. The upper end surface of the cleaning table 31 serves as a carrying surface 311, and the lower end surface of the cleaning table 31 is connected to a rotating shaft 312, and the rotating shaft 312 can be connected to an external driving structure, such as an external motor for driving the cleaning table 31 to rotate. The central axis of the rotating shaft 312 is colinear with the central axis of the cleaning table 31, so the central axis of the rotating shaft 312 is the rotation central axis a of the edge cleaning table 31, and the rotation central axis is perpendicular to the carrying surface 311.

The carrying surface 311 of the cleaning table 31 is used to carry and fix the wafer 50 to be cleaned, and the outer diameter of the cleaning table 31 is slightly larger than the outer diameter of the wafer 50. A plurality of vacuum adsorption grooves are provided on the carrying surface 311 of the cleaning table 31, and the vacuum adsorption grooves are connected to a vacuum device to suck the air in the vacuum adsorption grooves, so that a negative pressure environment is formed in the vacuum adsorption grooves, and then the wafer 50 carried on the carrying surface 311 is adsorbed. When the wafer 50 is placed on the carrying surface 311, the central axis of the wafer 50 should be ensured to be collinear with the central axis of the cleaning table 31.

The edge cleaning member 32 is used to remove the metal layer at the edge of the wafer on the edge cleaning station 31 .

The edge washing component 32 can remove the metal layer by physical removal or chemical removal. In the present embodiment, the edge washing component 32 chooses to adopt the chemical removal method. The edge washing component 32 is a tubular structure arranged parallel to the bearing surface 311, one end of which is an external chemical liquid supply device, and the other end is a liquid outlet. The liquid supply device is, for example, a liquid supply pump. The liquid outlet of the edge washing component 32 is located above the edge washing table 31, and the edge washing component 32 is used to provide chemical liquid to the edge position of the wafer 50 on the edge washing table 31 to corrode and remove the metal layer at the edge position of the wafer. The chemical liquid can be selected based on the type of metal to be removed. Taking the removal of the aluminum deposited layer as an example, the chemical liquid can be selected from HF or SC1 solution (SC1 solution is a mixture of ammonia, hydrogen peroxide and water, and the components of the solution belong to the prior art).

Please refer to FIG. 2 . In this embodiment, the liquid outlet of the edge washing member 32 is located near the edge of the bearing surface 311 . The radial distance between the liquid outlet of the edge washing member 32 and the rotation center axis of the edge washing table 31 is a set distance.

As shown in Figure 2, after the supporting surface 311 adsorbs and fixes the wafer 50, the liquid outlet of the edge washing component 32 is located directly above the edge position of the wafer 50, and the radial distance between the liquid outlet of the edge washing component 32 and the rotation center axis a of the edge washing table 31 is a set distance L. The set distance L is based on the size of the wafer. For a wafer with a radius of 150mm, the edge position where the metal is to be removed is approximately R145mm-R149mm, so the set distance L is approximately 147mm. Therefore, the liquid dripping from the liquid outlet of the edge washing component 32 falls at the specified position on the edge of the wafer 50.

Due to the rotating setting of the edge cleaning station 31 , when the liquid outlet position of the edge cleaning member 32 is determined, the edge cleaning station 31 rotates and drives the wafer 50 to rotate, and the edge cleaning member 32 can provide chemical liquid to the circumference of the edge position of the wafer 50 .

Preferably, the edge washing member 32 is movable in a direction perpendicular to the bearing surface 311. For example, the edge washing member 32 is a flexible tube. The edge washing member 32 is arranged on a lifting structure near the liquid outlet. For example, the edge washing member 32 is arranged on a lifting block near the liquid outlet. The liquid outlet of the edge washing member 32 extends out of the lifting block. The lifting block can be driven to lift linearly by a linear drive structure such as a cylinder or a linear motor. The lifting and lowering setting of the edge washing member 32 helps to adjust the distance between its liquid outlet and the bearing surface 311, thereby ensuring a suitable distance between the liquid outlet and the wafer 50, thereby ensuring that the dripping chemical liquid is in good contact with the edge of the wafer 50, and improving the edge washing efficiency.

In other alternative embodiments, the edge washing member 32 may be set to move in the radial direction to adjust the set distance L, thereby adjusting the edge washing position to adapt to wafers of different specifications.

In other alternative embodiments, the liquid outlet of the edge washing member 32 may be vertically directed toward the bearing surface 311 to ensure that the chemical liquid dripping from the liquid outlet of the edge washing member 32 falls precisely at a designated position.

The above-mentioned semiconductor polishing equipment integrates a polishing module and an edge cleaning module. The setting of the edge cleaning module can improve the condition of the wafer edge. Therefore, before the polishing module is polished, an edge cleaning process can be added through the edge cleaning module to remove the metal layer at the edge of the wafer, which can prevent the metal layer at the edge of the wafer from falling off during the polishing process and scratching the wafer surface.

Moreover, the setting of the above-mentioned edge cleaning module can completely remove the metal peeling source at the edge of the wafer. There is no metal element residue before and after grinding, and the consistency of wafer edge performance is improved. Since the metal peeling source is completely removed, the scratch condition of the wafer can be improved by more than 95%, and the peeling metal particles that affect the yield are reduced to 0, which also helps to improve product yield and reliability. In addition, this method improves the edge condition of the wafer, which can not only improve the defects of the wafer during the grinding process, but also improve the defects of the wafer in the subsequent process.

The edge washing module is set up, on the one hand, to optimize the process steps, and on the other hand, the edge washing module is integrated into the grinding equipment to improve the comprehensive performance of the grinding equipment, making it more controllable, and helping to reduce the production cost of wafers, improve the yield and thus increase production capacity.

Furthermore, the edge washing module 30 also includes a cleaning component 33 and a cleaning component 34;

The cleaning part 33 is used to pass cleaning liquid into the surface of the wafer to clean the wafer after edge washing. The cleaning liquid can be clean pure water, and the cleaning part 33 can also be a tubular structure, one end of which is connected to a liquid supply device, such as a pure water liquid supply pump, and the other end is used as a liquid outlet to inject cleaning liquid into the surface of the wafer 50 to achieve the effect of cleaning the surface of the wafer. In addition, the liquid outlet of the cleaning part 30 can also be connected to an external liquid spray head so that the cleaning liquid is sprayed out at high pressure to improve the cleaning effect. Similarly, the cleaning part 33 can also be set to move radially, so that during the cleaning process, the cleaning part 33 is driven to reciprocate radially, and the wafer 50 rotates with the cleaning table 31 to achieve the effect of fully cleaning the wafer.

The cleaning member 34 is, for example, a sponge or a brush. The cleaning member 34 is arranged to move relative to the edge cleaning station 31, for example, the cleaning member 34 is arranged to move in a direction perpendicular to the carrying surface 311. When cleaning is required, the cleaning member 34 is driven to move in a direction close to the carrying surface 311 to contact the wafer; when cleaning is completed, the cleaning member 34 is driven to move in a direction away from the carrying surface 311 to separate from the wafer.

When the cleaning member 34 contacts the wafer surface on the edge washing table 31 and the wafer 50 rotates with the edge washing table 31, the wafer 50 moves relative to the cleaning member 34 to clean the particles on the surface of the wafer 50 after edge washing. On the one hand, it can be used to remove particles, and on the other hand, it is also beneficial to separate the particles attached to the wafer surface from the wafer surface.

The radial distance between the cleaning member 34 and the rotation center axis a of the edge washing table 31 is equal to the radial distance between the liquid outlet of the edge washing member 32 and the rotation center axis a of the edge washing table 31, so as to ensure that the position of the wafer cleaned by the cleaning member 34 is the area corroded by the chemical liquid.

In addition, the cleaning member 34 can also be driven to rotate. For example, the cleaning member 34 includes a disc and a sponge mounted on the disc. The disc is driven to rotate to drive the sponge to rotate, and the sponge contacts the wafer to achieve cleaning. At this time, the cleaning member 34 rotates and the wafer rotates with the edge cleaning table 31, which can ensure a better cleaning effect.

The additional setting of the cleaning piece 34 can optimize the edge of the wafer, for example, reduce the roughness of the wafer edge, reduce the particles or by-products that fall off the wafer edge, and thereby reduce the negative impact caused by particles or by-products being brought into the wafer surface due to the rotational mechanical friction during the grinding process, thereby helping to improve the grinding performance of semiconductor grinding equipment.

The linear motion of the cleaning member 34 can be driven by a linear motor, the rotation of the cleaning member 34 can be directly driven by a rotary motor, the radial motion and lifting motion of the cleaning member 33 can be driven by a linear motor, and the driving mode of the cleaning member 33 and the cleaning member 34 can be flexibly selected based on their motion mode. The driving mode is existing technology and will not be repeated here.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

The above description is only a description of the preferred embodiments of the invention, and is not intended to limit the scope of the invention. Any changes or modifications made by a person of ordinary skill in the art based on the above disclosure shall fall within the scope of protection of the claims.

Claims (10)

1. A semiconductor polishing device, comprising: a housing, and a polishing module and an edge washing module located in the housing; The grinding module is used to flatten the surface of the wafer; The edge cleaning module is used to remove the metal layer at the edge of the wafer surface. 2. The semiconductor polishing equipment according to claim 1, characterized in that the edge washing module comprises an edge washing table and an edge washing member; The edge cleaning table is used to carry and fix the wafer to be edge cleaned; The edge cleaning member is used to remove the metal layer at the edge position of the wafer on the edge cleaning table. 3. The semiconductor polishing equipment as described in claim 2 is characterized in that the edge washing module also includes a cleaning component, and the cleaning component is used to pass a cleaning liquid into the surface of the wafer to clean the wafer after edge washing. 4. The semiconductor polishing equipment as described in claim 2 is characterized in that the edge washing module also includes a cleaning piece, and the cleaning piece is arranged to move relative to the edge washing table. The cleaning piece is used to contact and move relative to the wafer surface on the edge washing table to clean particles on the wafer surface after edge washing. 5. The semiconductor polishing equipment according to any one of claims 2 to 4, characterized in that the edge cleaning member is used to provide chemical liquid to the edge of the wafer to corrode and remove the metal layer at the edge of the wafer. 6. The semiconductor polishing equipment as described in claim 5 is characterized in that the edge washing table has a bearing surface, the bearing surface is used to bear and fix the wafer to be washed, the edge washing table is rotatable, the rotation axis of the edge washing table is perpendicular to the bearing surface, and the radial distance between the liquid outlet of the edge washing component and the rotation axis of the edge washing table is a set distance. 7 . The semiconductor polishing equipment according to claim 6 , wherein the edge cleaning member is movably arranged in a direction perpendicular to the bearing surface. 8. The semiconductor polishing equipment as described in claim 6 is characterized in that when the edge washing module includes a cleaning piece, the cleaning piece is arranged to move in a direction perpendicular to the bearing surface, and the radial distance between the cleaning piece and the rotation center axis of the edge washing table is equal to the radial distance between the liquid outlet of the edge washing piece and the rotation center axis of the edge washing table. 9. The semiconductor polishing equipment as described in claim 1 is characterized in that the semiconductor polishing equipment also includes a cleaning module, the cleaning module is located in the shell, and the cleaning module is used to clean the flattened wafer. 10. The semiconductor polishing equipment according to claim 9, wherein the edge cleaning module is located between the polishing module and the cleaning module; And/or, the edge washing module and the cleaning module are arranged adjacent to the grinding module.