CN118795737B - Interference super-resolution lithography system and method based on electro-optical high-speed phase shifting - Google Patents
Interference super-resolution lithography system and method based on electro-optical high-speed phase shifting Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本发明公开了一种基于电光高速移相的干涉超分辨光刻系统和方法，该干涉超分辨光刻系统通过分别对两束相位调控后的激光进行偏振方向调控，使得两束激光的偏振方向相同，以保证最高对比度的干涉条纹，减少干涉条纹图案中的伪影，并通过对偏振方向相同的两束激光束的径向相对位置进行调控，从而能够实现对干涉条纹周期方向的灵活调控；本发明还通过对分束的两束激光的相位差进行调控，从而实现对干涉条纹的位置进行灵活调控；基于对干涉条纹的周期方向和位置的灵活调控，从而能够灵活实现各类微结构表面形貌和排列。
The present invention discloses an interference super-resolution lithography system and method based on electro-optical high-speed phase shifting. The interference super-resolution lithography system controls the polarization directions of two phase-controlled laser beams respectively so that the polarization directions of the two laser beams are the same, thereby ensuring interference fringes with the highest contrast and reducing artifacts in the interference fringes pattern. The radial relative positions of the two laser beams with the same polarization directions are controlled, thereby realizing flexible control of the periodic direction of the interference fringes. The present invention also controls the phase difference of the two split laser beams to realize flexible control of the position of the interference fringes. Based on the flexible control of the periodic direction and position of the interference fringes, various types of microstructure surface morphology and arrangement can be flexibly realized.
Description
Technical Field
The invention belongs to the technical field of laser direct writing, and particularly relates to an interference super-resolution lithography system and method based on electro-optical high-speed phase shifting.
Background
At present, the preparation of the large-area complex micro-nano structure has wide practical application prospect in the major national strategy level and the industry demand level, such as bionic drag reduction of an aircraft, large-size flexible touch control, space film lenses and the like. However, many problems are faced in the preparation of the micro-structure, such as how to flexibly realize the surface morphology and arrangement of various micro-structures on the meter-scale area, and devices such as masks are not required to be frequently replaced.
The invention patent application with publication number of CN109541893A discloses an immersion type surface plasmon interference lithography method with adjustable resolution. The method comprises the steps of (1) manufacturing an aluminum mask plate on the surface of a glass flat plate, (2) spin-coating a layer of polymethyl methacrylate (PMMA) on the aluminum mask plate, (3) standing the PMMA in the step (2) until the PMMA is completely solidified, (4) plating an additional dielectric film on the surface of the PMMA, (5) plating an additional aluminum film on the surface of the additional dielectric film, (6) plating an aluminum film on a photoresist substrate, (7) spin-coating a photoresist on the surface of the aluminum film of the photoresist substrate, (8) dripping immersion liquid on the surface of the photoresist, (9) placing the aluminum mask plate with the additional film above the surface of the photoresist, connecting the additional aluminum film of the aluminum mask plate with the photoresist together by the immersion liquid, (10) vertically irradiating the mask plate by using monochromatic parallel light to complete exposure, and (11) developing the photoresist to obtain a photoresist pattern. The invention uses the mask plate to design and process, the microstructure can not be flexibly regulated and controlled, and the regulating cost is higher.
The invention patent application with the publication number of CN102236267A discloses a laser interference lithography system, which comprises at least two lens groups, wherein each lens group comprises a spectroscope, a first total reflection lens and a second total reflection lens, the spectroscopes of the lens groups are all positioned on a main optical axis of incident light, different lens groups are positioned at different positions of the main optical axis, reflected light and transmitted light are generated after the incident light passes through the spectroscopes of the lens groups, the reflected light irradiates an interference point of a sample to be subjected to lithography after being reflected by the first total reflection lens and the second total reflection lens of the lens group, and the transmitted light becomes incident light of the lens group adjacent to the lens group. The lithography system disclosed in the patent application cannot realize the regulation and control of the position of the interference fringes and the period direction of the interference fringes at the same time.
The traditional projection exposure lithography technology cannot prepare complex three-dimensional nano structures, a corresponding mask plate is required to be designed and processed before each manufacturing, the cost is high, the efficiency is low, the electron beam lithography method has higher photoetching resolution but is limited by lower writing speed, large-area micro-nano structure preparation cannot be completed, and laser direct writing has the advantages of low cost, high writing freedom, low working environment requirement and the like, but is limited by single-point writing, and the micro-nano structure is still difficult to flexibly prepare.
Disclosure of Invention
The invention provides an interference super-resolution lithography system based on electro-optical high-speed phase shifting, which can flexibly realize the surface morphology and arrangement of various microstructures.
The invention provides an interference super-resolution lithography system based on electro-optical high-speed phase shifting, which comprises:
The laser output module is used for generating and calibrating laser;
The polarization beam splitting and phase regulating module comprises a polarization beam splitting module and a phase regulating module, wherein the polarization beam splitting module is used for obtaining two laser beams in different directions by modulating the polarization direction of the laser after calibration, and the phase regulating module is used for regulating the phase difference of the two laser beams;
The direction and vector polarization laser modulation module is used for respectively carrying out polarization regulation and control on the two laser beams with regulated and controlled phases, so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams with the same polarization directions are regulated and controlled;
the laser beam combining direct writing module is used for combining the two laser beams with the regulated radial relative positions and irradiating the two laser beams onto the photoresist on the displacement table to form an interference fringe pattern;
The illumination monitoring module is used for irradiating the interference fringe pattern to obtain scattered light and focusing the scattered light to obtain an image of the interference fringe pattern;
The acquisition control module is used for receiving the image of the interference fringe pattern, and synchronously controlling the phase regulation module, the direction and vector polarization laser modulation module and the illumination monitoring module to adjust the interference fringe pattern.
Preferably, the direction and vector polarization laser modulation module comprises two symmetrical branches, each branch comprises a beam expander, a movable half-wave plate and a deflection converging mirror;
Each beam expander is used for expanding two laser beams with regulated phases respectively;
Each split movable half-wave plate is used for respectively regulating and controlling the polarization directions of the corresponding beam expansion laser beams, so that the polarization directions of the two beam expansion laser beams are the same;
the deflection converging mirrors of each branch are used for respectively regulating and controlling the radial directions of the corresponding laser beams so as to regulate and control the radial relative positions of the two laser beams with the same polarization direction.
Preferably, the deflection convergence mirror comprises:
the rapid deflection table is connected with the acquisition control module and is used for rotating based on the instruction of the acquisition control module;
The concave mirror is positioned on the rapid deflection table and used for changing the propagation direction of the laser beam and focusing the laser beam with the changed propagation direction on the laser beam combination direct writing module.
Preferably, the deflection convergence mirror comprises:
the vibrating mirror is connected with the acquisition control module and used for deflecting based on an instruction of the acquisition control module;
and the lens is positioned behind the vibrating mirror and is used for focusing the laser beam with changed propagation direction onto the laser combined beam direct writing module.
Preferably, the polarization beam splitting module comprises a first half-wave plate and a polarization beam splitter, and the phase regulating module is positioned between the first half-wave plate and the polarization beam splitter;
the first half-wave plate is used for modulating the polarization direction of the calibrated laser to obtain polarized light;
The phase regulating module is used for regulating and controlling the phase difference of polarized light to obtain o light and e light, and enabling the directions of the o light and the e light and s light and p light of the polarization beam splitter to coincide so as to obtain the position of an interference fringe;
The polarization beam splitter is used for overlapping the o light and the e light after phase regulation with the corresponding s light and p light, so that the two laser beams after phase regulation are split.
Preferably, the laser output module comprises a laser and a beam collimator;
The laser is used for generating laser;
the beam collimator is used for collimating and calibrating the generated laser.
Preferably, the laser combined beam direct writing module comprises a beam splitter and a photoetching objective lens;
the beam splitter is used for combining the two laser beams with the regulated phases;
the photoetching objective lens is used for converging the laser after beam combination on the photoresist on the displacement table to form interference fringe patterns, so that excitation photoetching is completed.
Preferably, the illumination monitoring module comprises an illumination LED, a dichroic mirror, a tube mirror and a camera;
the illumination LEDs are used for illuminating the interference fringe patterns to obtain scattered light;
The scattered light is focused on a camera through the dichroic mirror and the tube mirror, and an image of the interference fringe pattern is captured by the camera.
Preferably, the acquisition control module comprises a computer and an acquisition card;
The computer is connected with the camera through communication and is used for receiving the image of the interference fringe pattern and sending an instruction to the acquisition card;
The acquisition card is used for synchronously controlling the phase regulation module, the direction and vector polarization laser modulation module and the illumination monitoring module based on the instruction so as to obtain or adjust the interference fringe pattern.
On the other hand, the invention also provides an interference super-resolution photoetching method based on the electro-optical high-speed phase shift, which utilizes the interference super-resolution photoetching system based on the electro-optical high-speed phase shift to carry out interference super-resolution photoetching and comprises the following steps:
generating laser through the laser output module, and calibrating the generated laser;
modulating the polarization direction of the laser beams by the polarization beam splitting module to form two laser beams, and regulating and controlling the phase difference of the two laser beams by utilizing the phase regulating and controlling module;
The two laser beams are respectively subjected to polarization direction regulation and control again through the direction and vector polarization laser modulation module, so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams are regulated and controlled;
Combining the two laser beams with the regulated radial relative positions and then irradiating the combined laser beams onto photoresist on a displacement table to obtain an interference fringe pattern;
The illumination monitoring module irradiates the interference fringe pattern to obtain scattered light, and focuses the scattered light to obtain an image of the interference fringe pattern;
The method comprises the steps that an acquisition control module receives an image of an interference fringe pattern, and synchronously controls a phase regulation module and a direction and vector polarization laser modulation module, so that the phase difference of two laser beams and the radial relative position of the two laser beams are regulated and controlled, and the interference fringe pattern is obtained or regulated;
And/or by moving the displacement stage.
Compared with the prior art, the invention has the beneficial effects that:
The method and the device have the advantages that the polarization directions of the two laser beams are respectively regulated and controlled by the two laser beams, so that the polarization directions of the two laser beams are the same, interference fringes with the highest contrast are ensured, artifacts in interference fringe patterns are reduced, the radial relative positions of the two laser beams with the same polarization directions are regulated and controlled, the periodic directions of the interference fringes are flexibly regulated and controlled, the phase difference of the two laser beams is regulated and controlled, the positions of the interference fringes are flexibly regulated and controlled, and the surface morphology and arrangement of various microstructures can be flexibly realized based on the flexible regulation and control of the periodic directions and the positions of the interference fringes.
Drawings
Fig. 1 is a schematic diagram of an interference super-resolution lithography system based on electro-optical high-speed phase shifting according to the present embodiment.
Fig. 2 is a schematic diagram of an interference fringe pattern obtained by step-scan lithography of an interference super-resolution lithography system based on electro-optical high-speed phase shifting according to the present embodiment.
Fig. 3 is a schematic diagram of an interference fringe pattern obtained by continuous scanning lithography of an interference super-resolution lithography system based on electro-optical high-speed phase shifting according to the present embodiment.
Detailed Description
The present application will be described and illustrated with reference to the accompanying drawings and examples for a clearer understanding of the objects, technical solutions and advantages of the present application.
The method and the device have the advantages that the problem that the surface morphology and arrangement of various microstructures cannot be flexibly realized on the meter-scale area is faced in the prior art, and the position and the period direction of interference fringes are flexibly regulated and controlled by synchronously controlling the phase regulating and controlling module and the direction and the vector polarization laser regulating module according to the specific embodiment of the invention, so that the purpose of flexibly realizing the surface morphology and arrangement of various microstructures on the meter-scale area is achieved.
The specific embodiment of the invention provides an interference super-resolution lithography system based on electro-optical high-speed phase shifting, which is shown in fig. 1, and sequentially comprises a high-power laser 1, a beam collimator 2, a first half-wave plate 3, an electro-optical modulator 4, a polarization beam splitter 5, a first beam expander 6, a second half-wave plate 7, a first rapid deflection converging mirror 8, a second beam expander 9, a third half-wave plate 10, a second rapid deflection converging mirror 11, a beam splitter 12, a dichroic mirror 13, a lithography objective lens 14, a displacement table 15, an illumination LED16, a tube mirror 17, a camera 18, a computer 19 and an acquisition card 20 according to the light path arrangement.
The laser output module provided by the embodiment of the invention comprises a high-power laser 1 and a beam collimator 2, wherein the high-power laser 1 is used for generating high-power coherent laser, and the beam collimator 2 is used for expanding beams and completing beam collimation calibration.
The polarization beam splitting module provided by the embodiment of the invention comprises the first half-wave plate 3 and the polarization beam splitter 5, wherein the first half-wave plate 3 modulates laser into a proper polarization direction, so that the light beam is split into two laser beams with mutually perpendicular polarization and equal light intensity after passing through the polarization beam splitter 5, and the two laser beams are respectively and independently modulated later.
The phase modulation module provided by the embodiment of the invention comprises an electro-optical modulator 4, wherein the electro-optical modulator 4 regulates and controls the phase difference between o light and e light by utilizing an electro-optical effect, and the o light and e light directions of the electro-optical modulator 4 are respectively overlapped with the s light and p light directions of the polarization beam splitter 5, so that the phase difference of the two light beams can be accurately regulated and controlled, the fringe position after the combined beams are interfered is controllably displaced, and the flexible photoetching requirement is met.
The direction and vector polarization laser modulation module provided by the embodiment of the invention comprises a first beam expander 6, a second half-wave plate 7, a first rapid deflection converging mirror 8, a second beam expander 9, a third half-wave plate 10 and a second rapid deflection converging mirror 11. Wherein the first beam expander 6 and the second beam expander 9 expand the two beams respectively, so that the two beams match the clear aperture of the subsequent optical element. The second half-wave plate 7 and the third half-wave plate 10 respectively regulate and control the polarization directions of the two beams of light in real time, so that the two beams of light have the same polarization direction no matter where the two beams of light are positioned, interference fringes with the highest contrast ratio are ensured, the excitation threshold of photoetching is met, and the second half-wave plate 7 and the third half-wave plate 10 are half-wave plates capable of being controlled by electric rotation. The first rapid deflection converging mirror 8 and the second rapid deflection converging mirror 11 are used for changing the radial relative positions of the two beams of light, so as to control the period direction of the interference fringes after beam combination.
In a specific embodiment, the first rapid deflection converging mirror 8 and the second rapid deflection converging mirror 11 provided in this embodiment adopt a rapid deflection table as a deflection control device, and a flexible hinge is arranged in the rapid deflection converging mirror, so that the rapid deflection converging mirror has a short stabilizing time and a high dynamic linearization deflection angle, and the rapid deflection state 1, the refresh rate is faster, the response is higher, and the phase difference is smaller, namely, the response is 3. The long-focus high-plane-precision concave mirror is placed on the rapid deflection table, and laser is focused on the back focal plane of the subsequent photoetching objective lens, so that two beams of light can be ensured to generate wide-field interference in the photoresist after passing through the photoetching objective lens.
In a specific embodiment, the first rapid deflection converging mirror 8 and the second rapid deflection converging mirror 11 provided in this embodiment adopt galvanometers as deflection control devices, and are composed of a driving plate, a high-speed swing motor, a position sensor, a negative feedback loop and the like, so as to form a high-precision and high-speed servo control system, which has higher scanning speed and repeated positioning precision. And a convex lens with long focus and high plane precision is placed behind the galvanometer, and laser is focused on the back focal plane of the subsequent photoetching objective lens, so that two beams of light can be ensured to generate wide field interference in the photoresist after passing through the photoetching objective lens.
The laser beam combining direct writing module provided by the embodiment of the invention comprises a beam splitter 12, a photoetching objective lens 14 and a displacement table 15, wherein the beam splitter 12 is used for combining two laser beams, the photoetching objective lens 14 is used for combining two laser beams on a back focal plane, interference is generated in photoresist on the displacement table 15 behind the objective lens by the two laser beams to form an interference fringe pattern, and excitation photoetching is completed.
The illumination monitoring module provided by the embodiment of the invention comprises an illumination LED16, a dichroic mirror 13, a tube mirror 17 and a camera 18. The illumination LED16 causes light scattered by the inscription structure to be reflected by the dichroic mirror 13 and then focused by the tube mirror 17 on the camera 18, and an image of the interference fringe pattern is captured by the camera 18.
The acquisition control module provided by the embodiment of the invention comprises a computer 19 and an acquisition card 20. The image captured by the camera 18 is transmitted to the computer 19 through network card communication. The acquisition card 20 realizes synchronous control of the first rapid deflection focusing lens 8, the second rapid deflection focusing lens 11, the electro-optical modulator 4, the second half-wave plate 7, the third half-wave plate 10 and the camera 18.
In some embodiments, an incident beam emitted by the laser is expanded and collimated by the beam collimator, then the polarization direction of the incident beam is adjusted by the half-wave plate, and the incident beam enters the polarization beam splitter and is divided into two beams of light with equal intensity, wherein the two beams of light are interference light of interference super-resolution lithography. Then, the two beams of light are respectively expanded by a beam expander and respectively reflected by a concave mirror on the rapid deflection table, the propagation direction is adjusted so as to change the direction of interference fringes, and the beams of light are converged on the back focal plane of the rear microscope objective. Before the fast deflection stage, one path of light is used to adjust the optical path difference through the electro-optical modulator to change the phase difference. Meanwhile, the other path of light compensates the optical path difference caused by the existence of the electro-optical modulator through the optical rod. And then, the light beams respectively pass through two half-wave plates which can be electrically and rotationally controlled, the polarization directions are adjusted to be the same, the light beams are ensured to generate interference on the surface of the sample in the same polarization direction mode, the contrast ratio of interference fringes is improved, and artifacts in the image are reduced. The two laser beams are combined by a beam splitter and then enter a microscope frame by a dichroic mirror. After realignment by the objective lens, interference fringes are formed in the photoresist on the displacement table to initiate the polymerization of the photoresist.
As shown in fig. 2, two beams of laser interfere on a displacement table to form equidistant interference fringes, after the interference fringes are exposed at a certain position for a period of time, the displacement table steps the distance of one view field to the next view field, a computer 19 gives an instruction to a data acquisition card 20, and the phase modulation module and the direction and the vector polarization laser modulation module are controlled to finish accurate regulation and control of the direction and the position of any interference fringes, and exposure is performed again, so that circulation is performed until writing exposure of all structures is completed. It should be noted that, only four interference patterns are listed in the figure, the direction and period of the interference fringes can be regulated and controlled at will during actual writing, and the interference patterns can be arranged in any direction of the two-dimensional plane for step writing, and the method is not limited to the schematic diagram.
FIG. 3 is a schematic diagram of a continuous scanning lithography embodiment of the electro-optic high-speed phase-shifting based interferometric super-resolution lithography system of the present preferred embodiment. As shown in fig. 3, two laser beams interfere on the displacement table 15 to form equidistant interference fringes, and at the same time, the displacement table 15 moves at a constant speed along the direction of the interference fringes, so as to expose a row of line arrays with arbitrary lengths in the field of view. The position of the platform and the morphology of the inscribed fringes can be detected in real time by the illumination monitoring module during the movement of the displacement platform 15, and if deviation in a certain direction exists, the phase modulation module and the direction and vector polarization laser modulation module can be controlled to carry out real-time fine regulation and control on the interference fringes, so that the exposed fringes are uniform and straight.
On the other hand, the specific embodiment of the invention also provides an interference super-resolution photoetching method based on electro-optical high-speed phase shifting, which comprises the following steps:
and generating laser through the laser output module, and calibrating the generated laser.
Modulating the polarization direction of the laser beams by the polarization beam splitting module to form two laser beams, and regulating and controlling the phase difference of the two laser beams by the phase regulating and controlling module.
And respectively carrying out polarization direction regulation and control on the two laser beams again through the direction and vector polarization laser modulation module, so that the polarization directions of the two laser beams are the same, and then regulating and controlling the radial relative positions of the two laser beams.
And combining the two laser beams with the regulated radial relative positions, and then irradiating the combined laser beams onto the photoresist on the displacement table to obtain an interference fringe pattern.
And irradiating the interference fringe pattern by the illumination monitoring module to obtain scattered light, and focusing the scattered light to obtain an image of the interference fringe pattern.
The acquisition control module is used for receiving the image of the interference fringe pattern and synchronously controlling the phase regulation module and the direction and vector polarization laser modulation module, so that the phase difference of the two laser beams and the radial relative position of the two laser beams are regulated and controlled, and the interference fringe pattern is obtained or regulated.
And/or by moving the displacement stage.
Claims (10)
1. An electro-optical high-speed phase shift-based interference super-resolution lithography system, comprising:
The laser output module is used for generating and calibrating laser;
The polarization beam splitting and phase regulating module comprises a polarization beam splitting module and a phase regulating module, wherein the polarization beam splitting module is used for obtaining two laser beams in different directions by modulating the polarization direction of the laser after calibration, and the phase regulating module is used for regulating the phase difference of the two laser beams;
The direction and vector polarization laser modulation module is used for respectively carrying out polarization regulation and control on the two laser beams with regulated and controlled phases, so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams with the same polarization directions are regulated and controlled;
the laser beam combining direct writing module is used for combining the two laser beams with the regulated radial relative positions and irradiating the two laser beams onto the photoresist on the displacement table to form an interference fringe pattern;
The illumination monitoring module is used for irradiating the interference fringe pattern to obtain scattered light and focusing the scattered light to obtain an image of the interference fringe pattern;
The acquisition control module is used for receiving the image of the interference fringe pattern, and synchronously controlling the phase regulation module, the direction and vector polarization laser modulation module and the illumination monitoring module to adjust the interference fringe pattern.
2. The electro-optic high-speed phase-shifting based interference super-resolution lithography system of claim 1, wherein said direction and vector polarization laser modulation module comprises two symmetrical branches, each branch comprising a beam expander, a movable half-wave plate, and a deflection converging mirror;
Each beam expander is used for expanding two laser beams with regulated phases respectively;
Each split movable half-wave plate is used for respectively regulating and controlling the polarization directions of the corresponding beam expansion laser beams, so that the polarization directions of the two beam expansion laser beams are the same;
the deflection converging mirrors of each branch are used for respectively regulating and controlling the radial directions of the corresponding laser beams so as to regulate and control the radial relative positions of the two laser beams with the same polarization direction.
3. The electro-optic high-speed phase-shifting based interferometric super-resolution lithography system of claim 2, wherein said deflection converging mirror comprises:
the rapid deflection table is connected with the acquisition control module and is used for rotating based on the instruction of the acquisition control module;
The concave mirror is positioned on the rapid deflection table and used for changing the propagation direction of the laser beam and focusing the laser beam with the changed propagation direction on the laser beam combination direct writing module.
4. The electro-optic high-speed phase-shifting based interferometric super-resolution lithography system of claim 2, wherein said deflection converging mirror comprises:
the vibrating mirror is connected with the acquisition control module and used for deflecting based on an instruction of the acquisition control module;
and the lens is positioned behind the vibrating mirror and is used for focusing the laser beam with changed propagation direction onto the laser combined beam direct writing module.
5. The electro-optic high-speed phase shift-based interference super-resolution lithography system according to claim 1, wherein said polarization beam splitting module comprises a first half-wave plate and a polarization beam splitter, said phase modulation module being located between the first half-wave plate and the polarization beam splitter;
the first half-wave plate is used for modulating the polarization direction of the calibrated laser to obtain polarized light;
The phase regulating module is used for regulating and controlling the phase difference of polarized light to obtain o light and e light, and enabling the directions of the o light and the e light and s light and p light of the polarization beam splitter to coincide so as to obtain the position of an interference fringe;
The polarization beam splitter is used for overlapping the o light and the e light after phase regulation with the corresponding s light and p light, so that the two laser beams after phase regulation are split.
6. The electro-optical high-speed phase-shifting based interference super-resolution lithography system of claim 1, wherein said laser output module comprises a laser and a beam collimator;
The laser is used for generating laser;
the beam collimator is used for collimating and calibrating the generated laser.
7. The electro-optical high-speed phase-shifting based interference super-resolution lithography system according to claim 1, wherein the laser beam combining direct writing module comprises a beam splitter and a lithography objective lens;
the beam splitter is used for combining the two laser beams with the regulated phases;
the photoetching objective lens is used for converging the laser after beam combination on the photoresist on the displacement table to form interference fringe patterns, so that excitation photoetching is completed.
8. The electro-optic high-speed phase-shifting based interferometric super-resolution lithography system according to claim 1, wherein the illumination monitoring module comprises an illumination LED, a dichroic mirror, a tube mirror, and a camera;
the illumination LEDs are used for illuminating the interference fringe patterns to obtain scattered light;
The scattered light is focused on a camera through the dichroic mirror and the tube mirror, and an image of the interference fringe pattern is captured by the camera.
9. The electro-optical high-speed phase shift-based interference super-resolution lithography system according to claim 1, wherein said acquisition control module comprises a computer and an acquisition card;
The computer is connected with the camera through communication and is used for receiving the image of the interference fringe pattern and sending an instruction to the acquisition card;
The acquisition card is used for synchronously controlling the phase regulation module, the direction and vector polarization laser modulation module and the illumination monitoring module based on the instruction so as to obtain or adjust the interference fringe pattern.
10. An electro-optical high-speed phase shift-based interference super-resolution lithography method, characterized in that the electro-optical high-speed phase shift-based interference super-resolution lithography system is used for interference super-resolution lithography, and the method comprises the following steps:
generating laser through the laser output module, and calibrating the generated laser;
modulating the polarization direction of the laser beams by the polarization beam splitting module to form two laser beams, and regulating and controlling the phase difference of the two laser beams by utilizing the phase regulating and controlling module;
The two laser beams are respectively subjected to polarization direction regulation and control again through the direction and vector polarization laser modulation module, so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams are regulated and controlled;
Combining the two laser beams with the regulated radial relative positions and then irradiating the combined laser beams onto photoresist on a displacement table to obtain an interference fringe pattern;
The illumination monitoring module irradiates the interference fringe pattern to obtain scattered light, and focuses the scattered light to obtain an image of the interference fringe pattern;
The method comprises the steps that an acquisition control module receives an image of an interference fringe pattern, and synchronously controls a phase regulation module and a direction and vector polarization laser modulation module, so that the phase difference of two laser beams and the radial relative position of the two laser beams are regulated and controlled, and the interference fringe pattern is obtained or regulated;
And/or by moving the displacement stage.
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| CN108983560A (en) * | 2018-08-29 | 2018-12-11 | 中国科学院光电技术研究所 | Interference photoetching system with controllable period and direction |
| CN110837214A (en) * | 2019-10-31 | 2020-02-25 | 清华大学 | Scanning interference photoetching system |
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| JP4065468B2 (en) * | 1998-06-30 | 2008-03-26 | キヤノン株式会社 | Exposure apparatus and device manufacturing method using the same |
| WO2001035168A1 (en) * | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| JP4389791B2 (en) * | 2004-08-25 | 2009-12-24 | セイコーエプソン株式会社 | Fine structure manufacturing method and exposure apparatus |
| KR101065195B1 (en) * | 2006-12-19 | 2011-09-19 | 주식회사 엘지화학 | Laser Interference Lithography Apparatus and NanoGrating Forming Method Using the Same |
| CN112731776B (en) * | 2021-01-14 | 2023-06-20 | 之江实验室 | A double-mask high-throughput laser super-resolution laser direct writing method and device |
| CN116448728A (en) * | 2023-03-31 | 2023-07-18 | 浙江大学 | A dual-beam field interference light sheet microscopic imaging method and device based on galvanometer scanning |
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| CN108983560A (en) * | 2018-08-29 | 2018-12-11 | 中国科学院光电技术研究所 | Interference photoetching system with controllable period and direction |
| CN110837214A (en) * | 2019-10-31 | 2020-02-25 | 清华大学 | Scanning interference photoetching system |
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