CN118759641B - A photon lead and its preparation method and application - Google Patents

Abstract

The application provides a photon lead, a preparation method and application thereof. The preparation method of the photon lead comprises the steps of conducting subdivision processing on a photon lead virtual prototype to obtain a plurality of subdivision parts, designing the central line of a virtual supporting table in the subdivision parts into a straight line, and designing the central line of a virtual supporting bridge into a parabola or a catenary. And establishing a space rectangular coordinate system in a patterning software, drawing central lines of all subdivision parts, carrying out three-dimensional equidistant stretching on all central lines to form a three-dimensional model of the photon lead, outputting a photon lead file, guiding the photon lead file into a photoetching device, aligning the three-dimensional space coordinate system built in the photoetching device with the space rectangular coordinate system, designing technological parameters of the photoetching device, photoetching photoresist formed on a substrate, and carrying out development and drying treatment to obtain the photon lead. The preparation method provided by the application can prepare the photon lead with stable and reliable structure.

Description

A photon lead and its preparation method and application

Technical Field

The present application relates to the field of photon integration technology, and in particular to a photon lead and a preparation method and application thereof.

Background Art

Photonic Wire Bonding (PWB) technology uses high-energy pulsed lasers to cause multi-photon polymerization at specific locations of photoresist. After development and drying, photonic wires are formed. Through photonic wires, connections between multiple photonic chips can be achieved.

In the process of preparing photon leads, existing research directions mostly focus on the simulation of the effect of the size and position of the photon leads on the coupling efficiency between photon chips, while ignoring the research on the stability, appearance and process alignment of the photon lead structure itself. If the prepared photon lead process is not feasible, the integration of photon chips will not be achieved. Therefore, how to develop a photon lead with reliable process is an urgent problem to be solved in the field of photon integration technology.

Summary of the invention

The present application provides a photon lead and a preparation method and application thereof, which can prepare a photon lead with a stable and reliable structure.

Specifically, the present application is implemented through the following technical solutions:

On the one hand, the present application provides a method for preparing a photon lead, comprising:

A virtual prototype of a photon lead is constructed in a drawing software, and the virtual prototype is subdivided to obtain a plurality of subdivided parts, wherein the plurality of subdivided parts include two virtual support platforms and a virtual support span beam disposed between the two virtual support platforms; the center line of the virtual support platform is designed to be a straight line, and the center line of the virtual support span beam is designed to be a parabola or a catenary;

Establishing a spatial rectangular coordinate system in the mapping software, drawing the center lines of each of the subdivided parts in the spatial rectangular coordinate system, performing three-dimensional equidistant stretching on each of the center lines to form a three-dimensional model of the photon lead, and outputting a photon lead file containing information of the three-dimensional model of the photon lead;

The photon lead file is imported into the lithography equipment, the three-dimensional space coordinate system built into the lithography equipment is aligned with the space rectangular coordinate system, and the process parameters of the lithography equipment are designed, and the photoresist formed on the substrate is photolithographically processed, and then developed and dried to prepare the photon lead.

Optionally, drawing the center line of each of the subdivided parts in the spatial rectangular coordinate system includes:

The height of the highest point of the center line of the virtual support beam is drawn to be less than the horizontal span of the center line of the virtual support beam; and/or, the horizontal span of the center line of the virtual support beam is drawn to be 2.5 to 12 times the length of the center line of the virtual support platform.

Optionally, the multiple subdivided parts further include a virtual transfer part arranged between the virtual support platform and the virtual support span beam, and the center line of the virtual transfer part is designed to be an arc line;

Drawing the center line of each of the subdivided parts in the spatial rectangular coordinate system also includes drawing a radius of the center line of the virtual transfer part that is smaller than the length of the center line of the virtual support platform.

Optionally, the radius of the center line of the virtual transfer portion is less than or equal to 10 μm; the height of the highest point of the center line of the virtual support span is 20-60 μm; the horizontal span of the center line of the virtual support span is 80-120 μm; the length of the center line of the virtual support platform is 10-30 μm;

And/or, the radius of the center line of the virtual transfer part is 5μm; the height of the highest point of the center line of the virtual support beam is 40μm; the horizontal span of the center line of the virtual support beam is 100μm; the length of the center line of the virtual support platform is 15μm.

Optionally, after the photon lead file is imported into the photolithography equipment, the method further includes:

The three-dimensional model of the photon lead is cut into a plurality of two-dimensional planes along the horizontal direction, and the absolute value of the slope of the section of the virtual support span beam is set to be proportional to the distance between two adjacent two-dimensional planes;

Each of the two-dimensional planes is divided into a plurality of travel routes, and the travel routes of two adjacent two-dimensional planes are parallel or intersecting with each other. The photolithography equipment scans according to the travel routes in each of the two-dimensional planes to perform photolithography on the photoresist formed on the substrate.

Optionally, the spacing between two adjacent two-dimensional planes is 0.008-0.3 μm; and/or the spacing between two adjacent two-dimensional planes is 0.02 μm.

Optionally, the lithography equipment includes a two-photon lithography equipment, and the process parameters of the two-photon lithography equipment include:

The objective lens magnification is 50x-70x, the average laser power is 6-38 mW, the laser scanning speed is 700~10000μm/s, and the laser scanning mode is splicing or non-splicing.

Optionally, establishing a spatial rectangular coordinate system in a mapping software includes:

The intersection of the symmetry axis between the two virtual support platforms and the horizontal line between the two virtual support platforms is constructed as the coordinate origin O of the spatial rectangular coordinate system;

A first coordinate point is defined along the length direction of a certain virtual support platform and at a preset distance from the coordinate origin O, and a direction vector of a first coordinate axis is calculated according to the first coordinate point and the coordinate origin O;

Starting from the coordinate origin O, a second coordinate point is defined along a direction perpendicular to the first coordinate axis and at a preset distance from the coordinate origin O, and a direction vector of the second coordinate axis is calculated based on the second coordinate point and the coordinate origin O;

Starting from the coordinate origin O, a third coordinate point is defined along a direction perpendicular to both the first coordinate axis and the second coordinate axis and at a preset distance from the coordinate origin O, and a direction vector of the third coordinate axis is calculated based on the third coordinate point and the coordinate origin O.

Optionally, aligning the three-dimensional spatial coordinate system built into the two-photon lithography device with the spatial rectangular coordinate system comprises:

Analyze the profile of the laser beam on the imaging module in the lithography equipment, determine the origin coordinates of the laser light source, and use a physical mark to mark the origin position of the laser light source in a certain area of the imaging module in the lithography equipment as an auxiliary marking point;

Controlling the movement of the three-dimensional positioning stage in the lithography equipment so that the auxiliary marking points are aligned with the coordinate origin O of the spatial coordinate system and the coordinate points of each coordinate axis in the sample to be processed in sequence, and sequentially collecting the coordinate position of the three-dimensional positioning stage corresponding to each alignment moment;

Calculating the direction vector of each coordinate axis in the three-dimensional positioning stage according to the coordinate position of the three-dimensional positioning stage, and establishing a one-to-one mapping relationship between the direction vector of each coordinate axis in the spatial rectangular coordinate system and the direction vector of each coordinate axis in the three-dimensional positioning stage, and sending the mapping relationship to a controller in the lithography device for controlling the movement of a driving laser;

Based on the mapping relationship, the controller for controlling the movement of the driving laser is controlled to move so that the three-dimensional space coordinate system built into the lithography equipment is quickly aligned with the space rectangular coordinate system.

On the other hand, the present application also provides a photon lead, which is prepared by any of the photon lead preparation methods described above;

The cross section of the photon lead is a square; and/or, the cross section of the photon lead is a square with a side length of 1.5 to 2.5 μm; and/or, the cross section of the photon lead is a square with a side length of 2 μm.

In another aspect, the present application further provides an application of the photon lead as described above in the field of photon integration technology.

The technical solution provided by this application can achieve the following beneficial effects:

The present application provides a photon lead and its preparation method and application. The photon lead virtual prototype is subdivided into a virtual support platform and a virtual support beam, and the center line of the virtual support platform is designed to be a straight line, and the center line of the virtual support beam is designed to be a parabola or a catenary. The photon lead can be prepared through three-dimensional modeling and photolithography. As a result, the support beam in the photon lead can produce a relatively uniform stress distribution under the action of its own weight, so that the top of the support beam and the support platform can achieve force balance, and the vertical load on the top of the support beam can be effectively converted into a horizontal thrust to be dispersed to the support platforms on both sides, avoiding the top of the support beam and the support platform from having a large stress concentration, which can easily cause the photon lead to deform or collapse, thereby improving the structural stability and reliability of the photon lead.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic flow chart of a method for preparing a photon lead according to an exemplary embodiment of the present application.

FIG. 2 is a schematic structural diagram of a virtual prototype of a photonic lead shown in an exemplary embodiment of the present application.

FIG. 3 is a schematic structural diagram of the center lines of various subdivided parts in a virtual prototype of a photon lead shown in an exemplary embodiment of the present application.

Figure 4 is a scanning electron microscope image of the electronic lead prepared in Example 26 of the present application.

Figure 5 is a scanning electron microscope image of the electronic lead prepared in Example 27 of the present application.

FIG. 6 is a scanning electron microscope image of a photonic lead connected to two photonic chips provided by the present application.

Figure numerals: 11, virtual support platform; 111, center line of the virtual support platform; 12, virtual support beam; 121, center line of the virtual support beam; 13, virtual transfer part; 131, center line of the virtual transfer part; 10, photon lead; 20, first photon chip; 21, second photon chip.

DETAILED DESCRIPTION

The technical solution of the present application will be described in detail below in conjunction with the accompanying drawings.

Please refer to FIG1 . The present application provides a method for preparing a photon lead, comprising the following steps:

S1. Construct a virtual prototype of the photon lead in a mapping software, and subdivide the virtual prototype to obtain a plurality of subdivided parts, wherein the plurality of subdivided parts include two virtual support platforms and a virtual support span beam disposed between the two virtual support platforms; the center line of the virtual support platform is designed to be a straight line, and the center line of the virtual support span beam is designed to be a parabola or a catenary;

S2. Establishing a spatial rectangular coordinate system in a mapping software, drawing the center lines of each of the subdivided parts in the spatial rectangular coordinate system, performing three-dimensional equidistant stretching on each of the center lines to form a three-dimensional model of the photon lead, and outputting a photon lead file containing information of the three-dimensional model of the photon lead;

S3. Import the photon lead file into the lithography equipment, align the built-in three-dimensional space coordinate system of the lithography equipment with the space rectangular coordinate system, design the process parameters of the lithography equipment, perform photolithography on the photoresist formed on the substrate, and then perform development and drying to prepare the photon lead.

"The virtual prototype of the photon lead" refers to the preliminary design concept model of the photon lead that is pre-created in the digital environment of the mapping software before starting the three-dimensional modeling and lithography processing, so as to facilitate the subsequent abstract structural subdivision of the model and reasonably design the center line shape of each subdivided part. In this application, the virtual prototype of the photon lead is subdivided into a virtual support platform 11 and a virtual support beam 12 (as shown in FIG. 2), and the center line 111 of the virtual support platform is designed as a straight line, and the center line 121 of the virtual support beam is designed as a parabola or a catenary (as shown in FIG. 3). After three-dimensional modeling and lithography processing, the photon lead can be prepared. In the prepared physical photon lead, the support beam can produce a relatively uniform stress distribution under the action of its own weight, so that the top of the support beam and the support platform can achieve force balance, and the vertical load can be effectively converted into a horizontal thrust to be dispersed to the support platforms on both sides, avoiding the top of the support beam and the support platform from having a large stress concentration, which is easy to cause the photon lead to deform or collapse, thereby improving the structural stability and reliability of the photon lead.

It should be noted that "three-dimensional equidistant stretching" means stretching outward along the line diameter direction of the center line of each subdivided part to form a three-dimensional model with thickness in the Z direction of the established spatial rectangular coordinate system. In addition, the drawing software includes but is not limited to SolidWorks or Autodesk Fusion 360.

Please refer to FIG3 , in one embodiment, drawing the center line of each of the subdivided parts in the spatial rectangular coordinate system includes: drawing a height of the highest point G of the center line 121 of the virtual support span beam that is less than the horizontal span d of the center line 121 of the virtual support span beam. In one embodiment, the horizontal span d of the center line 121 of the virtual support span beam is 2.5 to 12 times the length L of the center line 111 of the virtual support platform.

By designing the height of the highest point G of the center line 121 of the virtual support span to be smaller than the horizontal span d of the center line 121 of the virtual support span, the dual purpose of low height and large span of the photon lead actually prepared can be taken into account, and effective load transfer can be achieved within a shorter distance, and the large span can be used to better disperse the vertical load of the support span, reduce the pressure on the support platform, and improve the structural stability and reliability of the photon lead. In addition, since the two ends of the virtual support span 12 in the form of a parabola or a catenary can bear part of the horizontal thrust to a certain extent, by designing the horizontal span d of the center line 121 of the virtual support span to be 2.5 to 12 times the length L of the center line 111 of the virtual support platform, it can be ensured that the support platform actually prepared has sufficient support surface to disperse the horizontal thrust, which can ensure the stability of the photon lead structure and take into account the transmission loss of the optical signal in the photon lead.

Please continue to refer to Figures 2 and 3. In one embodiment, the multiple subdivided parts also include a virtual transfer part 13 arranged between the virtual support platform 11 and the virtual supporting beam 12, and the center line 131 of the virtual transfer part is designed to be an arc line.

Drawing the center lines of each of the subdivided parts in the spatial rectangular coordinate system also includes drawing a radius R of the center line 131 of the virtual transfer portion that is smaller than the length L of the center line 111 of the virtual support platform.

In the preliminary design of the virtual prototype of the photon lead, a virtual transfer part 13 is constructed between the virtual support platform 11 and the virtual support beam 12 (as shown in FIG2 ), and the center line 131 of the virtual transfer part is designed to be an arc shape. The radius R of the virtual transfer part 13 is designed to be smaller than the length L of the virtual support platform 11. In the actual photon lead prepared, on the one hand, the effective bonding area between the support platform and the substrate can be taken into account, and on the other hand, the optical signal can be efficiently and smoothly transmitted.

In one embodiment, the radius of the center line 131 of the virtual transfer portion is less than or equal to 10 μm; the height of the highest point G of the center line 121 of the virtual support beam is 20~60 μm; the horizontal span of the center line 121 of the virtual support beam is 80~120 μm; and the length of the center line 111 of the virtual support platform is 10~30 μm.

In one embodiment, the radius of the center line 131 of the virtual transfer portion is 5 μm; the height of the highest point G of the center line 121 of the virtual support beam is 40 μm; the horizontal span of the center line 121 of the virtual support beam is 100 μm; and the length of the center line 111 of the virtual support platform is 15 μm.

In one embodiment, after the photon lead file is imported into the photolithography equipment in step S3, the process further includes:

The three-dimensional model of the photon lead is cut into a plurality of two-dimensional planes along the horizontal direction, and the absolute value of the slope of the section of the virtual support span beam is set to be proportional to the distance between two adjacent two-dimensional planes;

Each of the two-dimensional planes is divided into a plurality of travel routes, and the travel routes of two adjacent two-dimensional planes are parallel or intersecting with each other. The photolithography equipment scans according to the travel routes in each of the two-dimensional planes to perform photolithography on the photoresist formed on the substrate.

Since the section slope of the virtual support span 12 changes with the different structural positions of the virtual support span 12, the absolute value of the section slope of the virtual support span 12 is set to be proportional to the distance between two adjacent two-dimensional planes. As shown in FIG2, let the section slope of the virtual support span be a, then let the distance between two adjacent two-dimensional planes at this position be b (not shown in FIG2, but it can be understood that the two adjacent two-dimensional planes extend along the length direction of the virtual support platform 11, and are stacked in sequence upward along the length direction perpendicular to the virtual support platform 11). When the absolute value of the section slope a of the virtual support span 12 is designed to be larger, the distance b between the two adjacent two-dimensional planes is designed to be larger, and when the absolute value of the section slope a of the virtual support span 12 is designed to be smaller, the distance b between the two adjacent two-dimensional planes is designed to be smaller, thereby balancing the problem of photolithography processing accuracy and processing efficiency.

In one embodiment, the spacing between two adjacent two-dimensional planes is 0.008-0.3 μm; preferably, the spacing between two adjacent two-dimensional planes is 0.02 μm. In one embodiment, the travel paths of two adjacent two-dimensional planes are perpendicular to each other, thereby solving the problem of large errors in laser processing caused by scanning along a single-direction travel path of the lithography equipment.

In one embodiment, the lithography equipment includes a two-photon lithography equipment, and the process parameters of the two-photon lithography equipment include: an objective lens magnification of 50x-70x, an average laser power of 6-38 mW, a laser scanning speed of 700-10000 μm/s, and a laser scanning mode of splicing or non-splicing. Preferably, the objective lens magnification is 63x, the average laser power is 9-11 mW, the laser scanning speed is 1000 μm/s, and the laser scanning mode is non-splicing.

Two-photon lithography is a high-precision 3D micro-nano manufacturing technology that irradiates a focused laser beam into a photoresist to induce two-photon absorption, and forms a three-dimensional structure of a photon lead after development and drying and curing. Exemplarily, a two-photon lithography device includes a laser emitter, a laser beam imaging module, an objective lens, a controller, and a three-dimensional positioning stage. The laser beam emitted by the laser emitter reaches the objective lens through the laser beam imaging module for focusing, and then the controller controls the three-dimensional positioning stage to move in the three directions of XYZ to ensure that the focus formed by focusing the objective lens can perform two-photon lithography on the substrate coated with photoresist carried on the three-dimensional positioning stage.

Since the alignment error of the prepared photonic lead is a key variable affecting the coupling efficiency of the photonic chip, and the alignment error range required by the processing is at the nanometer level, the "alignment error" refers to the deviation between the actual position of the laser beam scanning and the target position in the three-dimensional model during the preparation of the photonic lead. The larger the alignment error, the lower the coupling efficiency.

Therefore, before lithography, how to ensure the alignment of the three-dimensional spatial coordinate system in the two-photon lithography equipment and the spatial rectangular coordinate system in the photon lead file is an important challenge and has certain technical difficulties. The difficulties mainly lie in: First, the three-dimensional positioning stage is a mechanical gear transmission device. Since mechanical gears will inevitably have tolerances in the actual process, return errors will be generated when controlling the three-dimensional positioning stage to move forward and backward. The return errors generated are at the micron level and do not meet the nanometer-level alignment errors required for processing. Second, when the two-photon lithography equipment performs in-situ processing on the photon lead, it is necessary to meet the cross-sectional processing requirements of the photon lead at the level of several microns, and also meet the processing requirements of the horizontal span of the photon lead support beam at the level of nearly 100 microns. Therefore, considering the compromise, the appropriate resolution of the objective lens that can take into account the above two processing requirements is only about 1~2 microns. At such a small resolution, the field of view of the objective lens is also relatively small, so it is difficult to achieve precise positioning at the nanometer level. Third, when the photonic chip is fixed on the three-dimensional positioning stage, there is a randomness in the layout, and a certain horizontal axis inclination angle is inevitable. Moreover, during the movement of the three-dimensional positioning stage, the fixing methods such as the fixing clamps used to fix the photonic chip will inevitably shake, causing the photonic chip to further "drift" at the micro-nano level, increasing the technical difficulty of alignment.

In one embodiment, in step S2, establishing a spatial rectangular coordinate system in the mapping software includes:

S21, constructing the intersection of the symmetry axis between the two virtual support platforms and the horizontal line between the two virtual support platforms as the coordinate origin O of the spatial rectangular coordinate system;

S22, defining a first coordinate point along the length direction of a virtual support platform and at a preset distance from the coordinate origin O, and calculating a direction vector of the first coordinate axis according to the first coordinate point and the coordinate origin O;

S23, starting from the coordinate origin O, defining a second coordinate point along a direction perpendicular to the first coordinate axis and at a preset distance from the coordinate origin O, and calculating a direction vector of the second coordinate axis according to the second coordinate point and the coordinate origin O;

S24. Starting from the coordinate origin O, a third coordinate point is defined along a direction perpendicular to both the first coordinate axis and the second coordinate axis and at a preset distance from the coordinate origin O, and a direction vector of the third coordinate axis is calculated based on the third coordinate point and the coordinate origin O.

The spatial rectangular coordinate system established according to the above scheme is not only used for alignment with the built-in three-dimensional spatial coordinate system of the lithography equipment, but also helps to determine the displacement of each virtual support table relative to the coordinate origin O in the subsequent lithography process. After aligning the origin of the built-in three-dimensional spatial coordinate system of the lithography equipment with the coordinate origin O of the spatial rectangular coordinate system, the processing position of the virtual support table can be reached by controlling the three-dimensional positioning stage to move in only one direction (the direction of the first coordinate axis or the direction opposite to the first coordinate axis), avoiding the unreasonable establishment of the spatial rectangular coordinate system, which causes the three-dimensional positioning stage to move in multiple directions after alignment before it can move to the processing position of the virtual support table. This scheme not only greatly reduces the return error generated by the three-dimensional positioning stage, but also can largely avoid the large-area position "drift" of the photonic chip.

In one embodiment, the first coordinate axis is the X axis, the second coordinate axis is the Y axis, and the third coordinate axis is the Z axis. The preset distance can be set to be greater than or equal to 15 μm, but is not limited thereto. In one embodiment, different physical marks are used to mark the coordinate origin O, the first coordinate point, the second coordinate point, and the third coordinate point in the spatial rectangular coordinate system, so that the above points can be more easily observed in the objective lens later, and the problem of fixing the photonic chip can also be weakened.

In one embodiment, in step S3, aligning the three-dimensional space coordinate system built into the lithography equipment with the space rectangular coordinate system comprises:

S31, automatically analyzing the profile of the laser beam on the imaging module in the lithography device, determining the origin coordinates of the laser light source, and using a physical mark to mark the origin position of the laser light source in a certain area of the imaging module in the lithography device as an auxiliary marking point;

S32, controlling the movement of the three-dimensional positioning stage in the lithography equipment, so that the auxiliary marking points are aligned with the coordinate origin O of the space coordinate system and the coordinate points of each coordinate axis in the sample to be processed in sequence, and the coordinate position of the three-dimensional positioning stage corresponding to each alignment moment is collected in sequence;

S33, calculating the direction vector of each coordinate axis in the three-dimensional positioning stage according to the coordinate position of the three-dimensional positioning stage, and establishing a one-to-one mapping relationship between the direction vector of each coordinate axis in the spatial rectangular coordinate system and the direction vector of each coordinate axis in the three-dimensional positioning stage, and sending the mapping relationship to the controller in the lithography device;

S34. Based on the mapping relationship, control the controller for controlling the driving laser movement to move so that the three-dimensional space coordinate system built into the lithography equipment is quickly aligned with the space rectangular coordinate system.

In the above scheme, by establishing a one-to-one mapping relationship between the direction vectors of each coordinate axis in the spatial rectangular coordinate system and the direction vectors of each coordinate axis in the three-dimensional positioning stage, the three-dimensional positioning stage can be quickly moved according to the established mapping relationship so that the three-dimensional spatial coordinate system built into the lithography equipment can be quickly aligned with the spatial coordinate system, which provides theoretical guidance for the alignment operation in the actual processing process and improves the alignment efficiency.

It should be noted that the imaging module includes but is not limited to CCD or CMOS or EMCCD. The profile analysis and marking of the laser beam can be achieved through software control. The physical mark mentioned in this article can be any mark such as a crosshair, an arrow or a cross.

In one embodiment, the drying method includes at least one of a natural air drying method and a critical point drying method. Preferably, the drying method is a critical point drying method, which can make the surface tension of the developer to be zero when it dries, and can better preserve the fine structure of the photon lead.

On the other hand, the present application also provides a photon lead, which is prepared by any of the photon lead preparation methods described above; the cross-section of the photon lead is a square. Preferably, the cross-section of the photon lead is a square with a side length of 1.5~2.5μm. More preferably, the cross-section of the photon lead is a square with a side length of 2μm, thereby, on the one hand, it can ensure that the photon lead and the substrate have a larger effective bonding area, improving the structural stability of the photon lead, and on the other hand, it can also take into account the photon lead with a smaller cross-sectional area, which helps to improve the coupling quality of the optical signal.

In another aspect, the present application further provides an application of the photon lead as described above in the field of photon integration technology.

Exemplarily, as shown in FIG6 , in the field of photonic integration technology, two photonic chips, namely a first photonic chip 20 and a second photonic chip 21, can be placed on the same substrate so that the first photonic chip 20 and the second photonic chip 21 are close to each other, and photoresist is applied to the area where the two need to be interconnected. The photoresist is photolithographically processed using a two-photon lithography device to prepare a photonic lead 10. In this process, the coupling connection between the first photonic chip 20 and the second photonic chip 21 can be easily achieved, thereby saving the need for additional coupling elements to perform complex alignment technology in the traditional photonic integration field, and greatly improving the preparation efficiency of the photonic leads.

The preparation method provided in this application can prepare a photon lead with a stable and reliable structure, as shown in the following embodiments:

Example 1

(1) A virtual prototype of the photon lead was constructed in Solidworks software. The virtual prototype was subdivided to obtain two virtual support platforms and a virtual support beam disposed between the two virtual support platforms. The center line of the virtual support platform was designed to be a straight line, and the center line of the virtual support beam was designed to be a parabola: .

(2) An XOY plane rectangular coordinate system is established in Solidworks software, and the center line of the virtual support platform and the center line of the virtual support beam are drawn in the XOY plane rectangular coordinate system, where the length of the center line of the virtual support platform is 15 μm, the horizontal span of the center line of the virtual support beam is 100 μm, and the height of the highest point of the center line of the virtual support beam is 60 μm. Each center line is stretched three-dimensionally at equal distances to form a three-dimensional model of a square photon lead with a cross section of 2 μm, and a photon lead file containing the three-dimensional model information of the photon lead is output.

(3) Import the photon lead file into the two-photon lithography equipment, align the built-in three-dimensional space coordinate system of the two-photon lithography equipment with the plane rectangular coordinate system in the photon lead file, so that the x and y coordinates of the origin of the two coordinates are consistent, and the two coordinate systems are in a proportional scaling relationship. Design the process parameters of the two-photon lithography equipment, perform two-photon lithography on the photoresist formed on the substrate, and then develop and dry it naturally at 25°C to prepare a square photon lead with a cross section of 2μm.

In the process of two-photon lithography, the spacing between two adjacent two-dimensional planes is set to 0.2 μm, the objective lens magnification is 63x, the average laser power is 35 mW, the laser scanning speed is 10000 μm/s, and the scanning is performed in a non-stitching manner.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 2

The difference from Example 1 is that the height of the highest point of the center line of the virtual supporting beam is 40 μm, the average laser power is 30 mW, and the other experimental conditions are the same as those in Example 1.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 3

The difference from Example 1 is that the highest point height of the center line of the virtual supporting beam is 40 μm, the average laser power is 35 mW, and the other experimental conditions are the same as those in Example 1.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 4

The difference from Example 1 is that the highest point height of the center line of the virtual supporting beam is 40 μm, the average laser power is 40 mW, and the other experimental conditions are the same as those in Example 1.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 5

The difference from Example 1 is that the average laser power is 30 mW, and the other experimental conditions are the same as those in Example 1.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Example 6

The difference from Example 1 is that the average laser power is 40 mW, and the other experimental conditions are the same as those in Example 1.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Example 7

The difference from Example 1 is that the height of the highest point of the center line of the virtual supporting beam is 80 μm, the average laser power is 30 mW, and the other experimental conditions are the same as those in Example 1.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Example 8

The difference from Example 1 is that the highest point height of the center line of the virtual supporting beam is 80 μm, and other experimental conditions are the same as those in Example 1.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Example 9

The difference from Example 1 is that the highest point height of the center line of the virtual supporting beam is 80 μm, the average laser power is 40 mW, and the other experimental conditions are the same as those in Example 1.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Example 10

The difference from Example 2 is that the multiple subdivided parts also include a virtual transfer part arranged between the virtual support platform and the virtual support beam, the center line of the virtual transfer part is designed to be an arc line, the radius of the center line of the virtual transfer part is 5μm, and other experimental conditions are the same as those in Example 2.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Embodiment 11

The difference from Example 10 is that the radius of the center line of the virtual transfer part is 7 μm, and the other experimental conditions are the same as those of Example 10.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 12

The difference from Example 10 is that the radius of the center line of the virtual transfer part is 10 μm, and the other experimental conditions are the same as those of Example 10.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 13

The difference from Example 10 is that the radius of the center line of the virtual transfer part is 20 μm, and the other experimental conditions are the same as those of Example 10.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Embodiment 14

The difference from Example 1 is that the height of the highest point of the center line of the virtual support beam is 20 μm, the average laser power is 30 mW, the drying method is to fully dry at the chemical critical point temperature of carbon dioxide, and each center line is three-dimensionally equidistantly stretched to form a three-dimensional model of a square photon lead with a cross-section of 1.5 μm. Other experimental conditions are the same as in Example 1.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Embodiment 15

The difference from Example 14 is that the average laser power is 35 mW, and the other experimental conditions are the same as Example 14.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Example 16

The difference from Example 14 is that the average laser power is 40 mW, and the other experimental conditions are the same as those of Example 14.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Embodiment 17

The difference from Example 14 is that the height of the highest point of the center line of the virtual supporting beam is 40 μm, and the other experimental conditions are the same as those of Example 14.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Embodiment 18

The difference from Example 14 is that the height of the highest point of the center line of the virtual support beam is 40 μm, the average laser power is 35 mW, and the other experimental conditions are the same as those of Example 14.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Embodiment 19

The difference from Example 14 is that the height of the highest point of the center line of the virtual supporting beam is 40 μm, the average laser power is 40 mW, and the other experimental conditions are the same as those of Example 14.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Embodiment 20

The difference from Example 1 is that the height of the highest point of the center line of the virtual support beam is 20 μm, the average laser power is 30 mW, and each center line is stretched three-dimensionally and equidistantly to form a three-dimensional model of a square photonic lead with a cross-section of 1.5 μm. Other experimental conditions are the same as those in Example 1.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Embodiment 21

The difference from Example 20 is that the average laser power is 35 mW, and the other experimental conditions are the same as those of Example 20.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Embodiment 22

The difference from Example 20 is that the average laser power is 40 mW, and the other experimental conditions are the same as those of Example 20.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Embodiment 23

The difference from Example 20 is that the height of the highest point of the center line of the virtual supporting beam is 40 μm, and the other experimental conditions are the same as those in Example 20.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Embodiment 24

The difference from Example 20 is that the height of the highest point of the center line of the virtual support beam is 40 μm, the average laser power is 35 mW, and the other experimental conditions are the same as those in Example 20.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

Embodiment 25

The difference from Example 20 is that the height of the highest point of the center line of the virtual support beam is 40 μm, the average laser power is 40 mW, and the other experimental conditions are the same as those in Example 20.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and was damaged relative to the substrate.

Embodiment 26

The difference from Example 1 is that the multiple subdivided parts also include a virtual transfer part arranged between the virtual support platform and the virtual support beam, the center line of the virtual transfer part is designed to be an arc line, the radius of the center line of the virtual transfer part is 5μm, the height of the highest point of the center line of the virtual support beam is 40μm, and other experimental conditions are the same as those in Example 1.

Scanning electron microscope observation shows that the photon lead has been successfully prepared and has not fallen off or collapsed relative to the substrate. As can be seen from the scanning electron microscope image shown in Figure 4, the surface of the prepared nanoscale photon lead is relatively rough.

Embodiment 27

The difference from Example 26 is that the spacing between two adjacent two-dimensional planes is set to 0.02 μm, the average laser power is 10 mW, the laser scanning speed is 1000 μm/s, and the other experimental conditions are the same as those in Example 26.

Scanning electron microscope observations showed that the photon lead had been successfully prepared and had not fallen off or collapsed relative to the substrate. As can be seen from the scanning electron microscope image shown in Figure 5, the surface of the prepared nanoscale photon lead is relatively smooth, accurately restoring the pre-designed three-dimensional model of the photon lead.

Embodiment 28

The difference from Example 1 is that the center line of the supporting span beam is designed to be a catenary, and the equation is: y=-60cosh(0.0263x)+120. Other experimental conditions are the same as those in Example 1.

Scanning electron microscope observation showed that the photon lead had been successfully prepared and did not fall off or collapse relative to the substrate.

Comparative Example 1

The difference from Example 1 is that the center line of the supporting span beam is designed to be a circle, and the equation is: , other experimental conditions are the same as those in Example 1.

Observation under a scanning electron microscope showed that the photon lead was not successfully prepared and fell off relative to the substrate.

Comparative Example 2

The difference from Example 1 is that the center line of the supporting span beam is designed to be an ellipse, and the equation is: x ² /2500+y ² /3600=1. Other experimental conditions are the same as those in Example 1.

Scanning electron microscopy observations showed that the photon lead was not successfully prepared and collapsed relative to the substrate.

It can be seen from the above-mentioned Example 1 and Comparative Examples 1-2 that the support beam arranged in a parabolic shape can reduce the normal stress at the top of the support beam and the surrounding area, compared with the support beam arranged in a circular or elliptical shape, because the support beam arranged in a parabolic shape produces a more uniform stress distribution under the action of its own weight. Therefore, the prepared photonic lead structure is more stable and reliable.

It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without causing conflicts. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the drawings; all modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application should be included in the scope of protection of this application.

Claims (10)

1. A method of making a photonic lead comprising:

constructing a virtual prototype of a photon lead in drawing software, and carrying out subdivision processing on the virtual prototype to obtain a plurality of subdivision parts, wherein the subdivision parts comprise two virtual supporting tables and a virtual supporting bridge arranged between the two virtual supporting tables; the center line of the virtual supporting table is designed to be a straight line, and the center line of the virtual supporting bridge is designed to be a parabola or a catenary;

establishing a space rectangular coordinate system in the drawing software, drawing the central lines of the subdivision parts in the space rectangular coordinate system, carrying out three-dimensional equidistant drawing on the central lines to form a three-dimensional model of a photon lead, and outputting a photon lead file containing the three-dimensional model information of the photon lead;

And (3) introducing the photon lead file into a photoetching device, aligning a three-dimensional space coordinate system arranged in the photoetching device with the space rectangular coordinate system, designing technological parameters of the photoetching device, photoetching a photoresist formed on a substrate, and then developing and drying to obtain the photon lead.

2. The method of manufacturing a photonic lead according to claim 1, characterized in that: drawing the centerline of each of the subdivided portions within the space rectangular coordinate system includes:

Drawing a horizontal span of which the height of the highest point of the central line of the virtual support bridge is smaller than that of the central line of the virtual support bridge; and/or drawing the horizontal span of the central line of the virtual support bridge to be 2.5-12 times of the length of the central line of the virtual support table.

3. The method of manufacturing a photonic lead according to claim 2, characterized in that: the plurality of subdivision parts further comprise virtual spandrel parts arranged between the virtual supporting table and the virtual supporting bridge, and the center line of each virtual spandrel part is designed into an arc line;

Drawing the center line of each subdivision part in the space rectangular coordinate system further comprises drawing the center line of the virtual bearing part to have a radius smaller than the length of the center line of the virtual supporting table.

4. A method of making a photonic lead according to claim 3, characterized in that: the radius of the center line of the virtual rotation bearing part is less than or equal to 10 mu m; the height of the highest point of the central line of the virtual support bridge is 20-60 mu m; the horizontal span of the central line of the virtual support bridge is 80-120 mu m; the length of the center line of the virtual supporting table is 10-30 mu m;

And/or the radius of the center line of the virtual rotation bearing part is 5 μm; the height of the highest point of the center line of the virtual support bridge is 40 mu m; the horizontal span of the central line of the virtual support bridge is 100 mu m; the length of the center line of the virtual support table is 15 mu m.

5. The method of manufacturing a photonic lead according to claim 1, characterized in that: after the photon lead file is imported into the lithography apparatus, the method further comprises:

dividing the three-dimensional model of the photon lead into a plurality of two-dimensional planes along the horizontal direction, and setting the absolute value of the slope of the tangent plane of the virtual support bridge and the interval between two adjacent two-dimensional planes as a proportional relation;

Dividing each two-dimensional plane into a plurality of travel routes, wherein the travel routes of two adjacent two-dimensional planes are parallel or intersected, and the photoetching equipment scans according to the travel routes in each two-dimensional plane so as to carry out photoetching on photoresist formed on a substrate.

6. The method for manufacturing a photonic lead according to claim 5, wherein: the distance between two adjacent two-dimensional planes is 0.008-0.3 mu m; and/or the spacing between two adjacent two-dimensional planes is 0.02 μm;

And/or, the lithographic apparatus comprises a two-photon lithographic apparatus, the process parameters of which comprise:

the multiplying power of the objective lens is 50x-70x, the average laser power is 6-38 mW, the laser scanning speed is 700-10000 mu m/s, and the laser scanning mode is splicing or not splicing.

7. The method of manufacturing a photonic lead according to claim 1, characterized in that: the establishing of the space rectangular coordinate system in the drawing software comprises the following steps:

Constructing an intersection point of a symmetrical axis between the two virtual supporting tables and a horizontal connecting line between the two virtual supporting tables as a coordinate origin O of the space rectangular coordinate system;

defining a first coordinate point along the length direction of a certain virtual supporting table and outside a certain preset distance from the coordinate origin O, and calculating to obtain a direction vector of a first coordinate axis according to the first coordinate point and the coordinate origin O;

Starting from the coordinate origin O, defining a second coordinate point along the direction perpendicular to the first coordinate axis and outside a certain preset distance from the coordinate origin O, and calculating to obtain a direction vector of the second coordinate axis according to the second coordinate point and the coordinate origin O;

and starting from the coordinate origin O, defining a third coordinate point along the direction perpendicular to the first coordinate axis and the second coordinate axis and at a certain preset distance from the coordinate origin O, and calculating to obtain a direction vector of the third coordinate axis according to the third coordinate point and the coordinate origin O.

8. The method of claim 7, wherein aligning the three-dimensional space coordinate system built into the lithographic apparatus with the space rectangular coordinate system comprises:

Analyzing the outline of a laser beam on an imaging module in the photoetching equipment, determining the origin coordinate of the laser source, and marking the origin position of the laser source in a certain area of the imaging module in the photoetching equipment by adopting physical marking to serve as an auxiliary marking point;

Controlling the three-dimensional positioning object table in the photoetching equipment to move, enabling the auxiliary marking points to be aligned with the coordinate origin O corresponding to the space coordinate system and coordinate points of all coordinate axes in the sample to be processed in sequence, and collecting the coordinate positions of the corresponding three-dimensional positioning object table at each alignment moment in sequence;

calculating according to the coordinate position of the three-dimensional positioning object stage to obtain direction vectors of all coordinate axes in the three-dimensional positioning object stage, establishing a one-to-one mapping relation between the direction vectors of all coordinate axes in the space rectangular coordinate system and the direction vectors of all coordinate axes in the three-dimensional positioning object stage, and sending the mapping relation to a controller in the lithography equipment for controlling and driving laser to move;

And controlling the movement of the controller for controlling the movement of the driving laser based on the mapping relation, so that the built-in three-dimensional space coordinate system of the lithography equipment is aligned with the space rectangular coordinate system rapidly.

9. A photonic lead prepared by the method of any one of claims 1 to 8;

the cross section of the photon lead is square; and/or the cross section of the photon lead is square with the side length of 1.5-2.5 mu m; and/or the cross section of the photon lead is square with the side length of 2 μm.

10. Use of the photonic lead according to claim 9 in the field of photonic integrated technology.