CN118486627A - Wafer pre-positioning method and device, and electronic equipment - Google Patents
Wafer pre-positioning method and device, and electronic equipment Download PDFInfo
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Abstract
The invention discloses a wafer pre-positioning method and device and electronic equipment, wherein the method comprises the following steps: acquiring a space voltage signal output by a preset sensor assembly of a wafer; the pre-positioning sensor assembly is arranged at the edge of the wafer; the edge of the wafer is provided with a positioning edge; converting the space voltage signal into a time duty ratio signal according to a triangular equal ratio relationship; and executing center pre-positioning and positioning edge pre-positioning on the wafer according to the time duty ratio signal. The technical scheme provided by the invention can realize positioning identification of the transparent wafer.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a wafer positioning method and apparatus, and an electronic device.
Background
The semiconductor production and test equipment has an automatic transmission function so as to realize accurate identification, feeding, processing and management of materials. Among them, wafers (wafer) need to be pre-positioned (positioning identification) during measurement or transmission, so that corresponding measurement and processing can be performed after the pre-positioning. Location identification includes center (identified with xy coordinates) pre-positioning and angle (FLAT edge (FLAT) or NOTCH (NOTCH)) pre-positioning, a process called pre-positioning (PREALIGNER, PA).
In the prior art, the silicon-based wafer is opaque, so the original PA equipment does not support transparent identification. The emerging compound semiconductors such as SiC and GaN cannot be positioned and identified due to transparency.
Disclosure of Invention
The embodiment of the invention provides a wafer positioning method and device and electronic equipment, which are used for realizing positioning identification of a transparent wafer.
In a first aspect, an embodiment of the present invention provides a wafer pre-positioning method, including:
acquiring a space voltage signal output by a preset sensor assembly of a wafer; the pre-positioning sensor assembly is arranged at the edge of the wafer; the edge of the wafer is provided with a positioning edge;
Converting the space voltage signal into a time duty ratio signal according to a triangular equal ratio relationship;
and executing center pre-positioning and positioning edge pre-positioning on the wafer according to the time duty ratio signal.
In a second aspect, an embodiment of the present invention provides a wafer pre-positioning device, which is applicable to the wafer pre-positioning method provided in any embodiment of the present invention, including:
The signal acquisition module is used for acquiring a space voltage signal output by the preset sensor assembly of the wafer;
the signal conversion module is used for converting the space voltage signal into a time duty ratio signal according to the triangular equal ratio relation;
and the pre-positioning module is used for executing center positioning and edge positioning on the wafer according to the time duty ratio signal.
In a third aspect, an embodiment of the present invention provides an electronic device, which includes a prepositioning control processor, where, for any wafer, the prepositioning control processor performs wafer prepositioning by using the prepositioning method according to any embodiment of the present invention.
In the invention, the output of the prepositioning sensor group is a space voltage signal, the space voltage signal can be converted into a time duty ratio signal according to the triangular equal ratio relation, and the wafer is prepositioned according to the time duty ratio signal. Therefore, the problem that the transparent wafer cannot be positioned in advance in the prior art is avoided, a specific time duty ratio type sensor is not required to be used for data acquisition, the space voltage type sensor is used for data acquisition, for example, a Kidney IG028 sensor, signals output by the space voltage type sensor are converted into time variables from space variables through the processing of a controller, and the application range is expanded to wafers with various transparencies; the device can realize effective positioning in different practical machine models, and has the advantages of convenient application, low replacement cost, compatibility of multiple machine models and unified standard.
Drawings
FIG. 1 is a waveform diagram of a pre-position sensor output of a prior art non-transparent wafer;
FIG. 2 is a waveform diagram of the output of a pre-alignment sensor of a transparent wafer according to the prior art;
FIG. 3 is a flow chart of a wafer alignment method according to an embodiment of the present invention;
FIG. 4 is a schematic plan view of a wafer according to an embodiment of the present invention;
FIG. 5 is a schematic plan view of another wafer according to an embodiment of the present invention;
fig. 6 is a high-speed output waveform of a time duty cycle PA of a wafer according to an embodiment of the present invention;
fig. 7 is a spatial voltage PA output waveform of a wafer according to an embodiment of the present invention;
fig. 8 is an output waveform of an opaque wafer of a space voltage type PA of the wafer according to an embodiment of the present invention;
fig. 9 is an output waveform of a transparent wafer of a space voltage type PA of the wafer according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a pre-positioning device according to an embodiment of the present invention;
FIG. 11 is a waveform diagram of a wafer pre-positioning method according to an embodiment of the present invention;
FIG. 12 is a waveform diagram of a wafer pre-positioning method according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of a small signal noise suppression processing circuit according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a wafer positioning apparatus according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
In the past, silicon-based wafers were opaque and the original PA equipment did not support transparent identification. The original PA equipment cannot work normally and needs to be modified for wafers formed by compound semiconductors such as SiC and GaN which are commonly used nowadays. Specifically, a pre-positioning sensor is required to be used in the measurement process. Fig. 1 is a waveform diagram of the output of a pre-alignment sensor of a non-transparent wafer according to the prior art. Fig. 2 is a waveform diagram of the output of a pre-alignment sensor of a transparent wafer in the prior art. Fig. 1 and 2 are waveforms of several nodes of a charge coupled device (charge coupled device, CCD) PA signal process. A certain period T' of the waveform corresponds to one CCD photographing imaging, the light distribution represents the wafer space position, and an exemplary low level is the condition that the whole light is not blocked (the wafer does not block the preset position sensor), a high level is an inherent black high level region (the wafer blocks the preset position sensor), the waveform high level in fig. 2 is slowly reduced to be the light distribution caused by the translucency of the wafer, and the middle small peak A1 is the black edge effect of the edge of the transparent wafer. Since for a transparent or semitransparent wafer the edge of the wafer is instead degraded by total reflection of light, a black line, i.e. a small peak A1 shown in fig. 2, is formed. As shown in fig. 1, the native silicon wafer is fully high to the wafer edge because of the full mask. It should be noted that, as shown in fig. 2, the signal change caused by the transparency of the wafer will cause the PA signal to have a larger fluctuation, so that the subsequent circuit will be difficult and inaccurate to extract the position of the edge of the wafer, and the positioning of the wafer cannot be realized.
In order to solve the above-mentioned problems, an embodiment of the present invention provides a wafer pre-positioning method, and fig. 3 is a schematic flow chart of the wafer pre-positioning method provided in the embodiment of the present invention. As shown in fig. 3, the method of the present embodiment includes the steps of:
Step S110, acquiring a space voltage signal output by a preset sensor assembly of a wafer; the pre-positioning sensor assembly is arranged at the edge of the wafer; the edge of the wafer is provided with a positioning edge.
As shown in fig. 4 and fig. 5, fig. 4 is a schematic plan view of a wafer according to an embodiment of the present invention. Fig. 5 is a schematic plan view of another wafer according to an embodiment of the present invention. The locating edge 211 of the wafer 21 is shown in both fig. 4 and 5, but the locating edge 211 shown in fig. 4 is a NOTCH 212 and the locating edge 211 shown in fig. 5 is a FLAT flag edge 213. The pre-position sensor assembly may include a plurality of pre-position sensors 26. The pre-positioned sensor assembly may be disposed at an edge of the wafer 21. When the wafer 21 rotates in a set direction, for example, in the L1 direction, the pre-positioning sensor 26 can output different signals when the wafer 21 covers the pre-positioning sensor 26 and when the pre-positioning sensor 26 is not covered, so that the wafer 21 is pre-positioned by the positioning edge 211.
The PA output signal shown in fig. 1 and 2 is an output signal based on a plurality of consecutive recordings of light distribution information, i.e., a time duty cycle signal, and may be referred to as a time duty cycle signal. Fig. 6 is a high-speed output waveform of a time duty cycle PA of a wafer according to an embodiment of the present invention. That is, on the basis of fig. 1, the time axis is compressed to obtain the situation of the spatial position change of the wafer positioning edge at the illumination and the CCD sensor, which is shown in fig. 6, by microscopically continuous high-speed photographing, and the eccentric value and the position of the Flat/Notch mark of the wafer are macroscopically obtained by algorithm analysis. As shown in fig. 6, in the macro envelope, the slowly varying envelope A2 corresponds to wafer decentration, and the abruptly varying envelope A3 corresponds to wafer Flat/Notch mark position. The PA output signal, as shown in fig. 7-9, characterizes the wafer spatial position, also referred to as the spatial voltage signal, based on recording real-time, continuous voltage values generated at the edge of the wafer at the pre-position sensor assembly. Fig. 7 is a spatial voltage PA output waveform of a wafer according to an embodiment of the present invention, fig. 8 is an output waveform of an opaque wafer of a spatial voltage PA of a wafer according to an embodiment of the present invention, and fig. 9 is an output waveform of a transparent wafer of a spatial voltage PA of a wafer according to an embodiment of the present invention. As shown in fig. 7, the sinusoidal curve of the voltage at A4 corresponds to wafer eccentricity and the peak at A5 corresponds to wafer Flat/Notch mark location. That is, the sinusoidal response is off-center, with the sharp peak corresponding to the locating edge (notch mark or flat mark). Similarly, the silicon wafer in fig. 8 and the transparent wafer in fig. 9 are eccentric through sinusoidal reaction, and the peak corresponds to the notch mark.
Step S120, converting the space voltage signal into a time duty ratio signal according to the triangular equal ratio relation.
In general, in the transparency modification of PA, the direct idea is to change the sensor so as to support the transparent sheet. The space voltage type PA is a commercial product supporting a transparent sheet, for example, a ken IG028, and may be provided by directly replacing the predetermined position sensor module with the ken IG 028. But for a time duty cycle PA, no direct reliability sensor is available. Therefore, this embodiment proposes an IG 028U 2P (U to P) scheme, i.e. the IG028 supporting GLS transparent sheets can be applied to a duty-cycle PA scheme. The core idea is as follows: and converting the sampled space voltage signal into a time duty ratio signal required by the time duty ratio type PA in real time, and completing the conversion from the space voltage U to the time duty ratio P, wherein the conversion is realized at a high speed by the MCU singlechip. Because the periods of signals output by the space voltage type PA and the duty cycle type PA are the same, and the mark changes of the positioning edge are synchronous, the space voltage type PA has a certain equal proportion relation, the space voltage signals are converted into time duty cycle signals through the triangular equal proportion relation, the conversion from the space voltage U to the time duty cycle P is completed in the singlechip at a high speed, and the final preset speed and precision are effectively improved. The method effectively realizes the transformation of the transparency scheme of the duty ratio type PA scheme, can realize the transformation of universality for a plurality of prepositioning equipment manufacturers, and improves the practicability and reliability of the scheme.
Optionally, the MCU singlechip can realize sampling based on the MA89G564 singlechip. The ADC adopts an MCU built-in maximum 250ksps and 12-bit successive approximation ADC analog-to-digital converter, works in a single node mode, has the measuring range of [0V,5V ], is 4096 equal parts, and has the minimum resolution of 1.22mV. The sampling rate of the MCU is 32M/6/2/24=111 Ksps, namely the sampling period is 9us. The sampling trigger may be set with a T3OF overflow and taken once every 15us (or other value greater than 9 us), or may be triggered immediately upon ADCS initiation (continuous uninterrupted multiple sampling averaging).
And step S130, performing center pre-positioning and positioning edge pre-positioning on the wafer according to the time duty ratio signal.
Fig. 10 is a schematic structural diagram of a positioning device according to an embodiment of the present invention. Optionally, before acquiring the spatial voltage signal output by the predetermined sensor assembly of the wafer 21, the method may include: the wafer 21 is controlled to be adsorbed on the rotation shaft 24, and the rotation shaft 24 is controlled to rotate at a constant speed. In this embodiment, the wafer 21 may be adsorbed on the rotation shaft 24 through the vacuum tube, and the rotation shaft 24 is controlled to rotate at a constant speed, so that the wafer is subjected to the spatial voltage signal output by the sensor assembly.
After converting the space voltage signal into the accurate time duty cycle signal, the pre-positioning device of the duty cycle PA may perform a pre-positioning operation directly through the time duty cycle signal, which may sequentially include a center pre-positioning and a positioning edge pre-positioning.
In the embodiment of the invention, the space voltage signal is output by the prepositioning sensor group, the space voltage signal can be converted into the time duty ratio signal according to the triangular equal ratio relation, and the wafer is prepositioned according to the time duty ratio signal. Therefore, the problem that the transparent wafer cannot be positioned in advance in the prior art is avoided, a specific time duty ratio type sensor is not required to be used for data acquisition, the space voltage type sensor is used for data acquisition, for example, a Kidney IG028 sensor, signals output by the space voltage type sensor are converted into time variables from space variables through the processing of a controller, and the application range is expanded to wafers with various transparencies; the device can realize effective positioning in different practical machine models, and has the advantages of convenient application, low replacement cost, compatibility of multiple machine models and unified standard.
The foregoing is the core idea of the present invention, and the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without making any inventive effort are intended to fall within the scope of the present invention.
In addition to the above embodiments, as shown in fig. 10, the pre-positioning sensor assembly may include at least one pre-positioning sensor; the pre-positioning sensor comprises a light emitter 22 and a receiver 23; the light emitter 22 and the receiver 23 are respectively disposed on both sides of the wafer 21. When the light emitter 22 emits light, if there is a shielding of the wafer 21 between the light emitter 22 and the receiver 23, the receiver 23 cannot receive the light signal and output the first voltage; if there is no shielding of the wafer 21 between the light emitter 22 and the receiver 23, the receiver 23 receives the light signal and outputs a second voltage. The present embodiment recognizes the positioning edge of the wafer 21 by the level signal output from the receiver 23. Alternatively, the width d1 of the light emitter 22 may be slightly smaller than the width d2 of the receiver 23. The receiver 23 of being convenient for can fully receive the light that the luminophor 22 sent, further promotes the accuracy of pre-positioning sensor group output voltage value to promote the degree of accuracy of space voltage signal, finally realize the accuracy of pre-positioning of transparent wafer.
Fig. 11 is a waveform diagram of a wafer pre-positioning method according to an embodiment of the present invention. Fig. 12 is a waveform diagram of a wafer pre-positioning method according to an embodiment of the present invention. Optionally, acquiring the spatial voltage signal output by the pre-positioning sensor assembly of the wafer may include: acquiring a voltage-time curve output by a preset sensor assembly of a wafer; the voltage-time curve comprises a plurality of first pulses M1; the first voltage of the first pulse corresponds to a state in which the predetermined sensor assembly is completely shielded by the wafer; the second voltage between two adjacent first pulses M1 corresponds to the state that all the preset positioning sensor components are exposed across the positioning edge; the first pulse M1 further includes a first rising edge s1 and a first falling edge s2; the voltage in the voltage-time curve is taken as the spatial voltage signal. In this embodiment, the pre-positioning sensor assembly generates a voltage-time curve during rotation of the wafer 21. For the voltage-time curve, when the pre-positioning sensor assembly is completely blocked by the wafer, a fixed first voltage is directly formed, when the pre-positioning sensor assembly is completely exposed across the positioning edge, a fixed second voltage is directly formed, and a first rising edge s1 and a first falling edge s2 between the first voltage and the second voltage form a variable voltage. In the process of converting the voltage-time curve into the time duty cycle curve (potential-time curve), it is known that the voltage-time curve and the time duty cycle curve have a certain equal ratio relationship, and in this embodiment, the voltage in the voltage-time curve is used as the space voltage signal u, and the space voltage signal u is transformed into the equal ratio relationship to obtain the time duty cycle signal.
It should be noted that the variable voltage needs to perform the conversion between the space amount and the time amount, and the present embodiment needs to focus on the space voltage signal u in the first rising edge s1 or the first falling edge s2, so as to convert the voltage-time curve into the potential-time curve, so as to implement the pre-positioning process of the transparent wafer, and implement the transparency modification of the duty cycle PA scheme.
Optionally, if the pre-positioning sensor assembly is installed in a positive sequence, outputting a space voltage signal on a first falling edge s2 of the first pulse M1, and then outputting a space voltage signal on a first rising edge s1 of the first pulse M1; if the pre-positioning sensor assembly is installed in the reverse order, the space voltage signal on the first rising edge s1 of the first pulse M1 is output first, and then the space voltage signal on the first falling edge s2 of the first pulse M1 is output. With continued reference to fig. 4, this embodiment may include a plurality of linear receiving arrays sequentially arranged along the X direction, and illustratively, the 1 st to 1024 th linear receiving arrays are sequentially arranged along the X direction. In this embodiment, the positive-sequence installation and the negative-sequence installation are directions flipped in the X direction. Optionally, in this embodiment, the mounting manner in which the 1 st to 1024 th linear receiving arrays are sequentially arranged along the X direction may be selected to be a positive sequence mounting of the predetermined sensor assembly; along the X direction, the 1024 th to 1 st linear receiving arrays are sequentially arranged in a reverse order of the pre-positioning sensor assembly. For example, as shown in FIG. 11, CCDout1 may be an odd column linear receive array output waveform (voltage-time curve) and CCDout2 may be an even column linear receive array output waveform (voltage-time curve). CCDout may refer to any column linear receive array output waveform (voltage-time curve). With continued reference to fig. 11, when the pre-positioning sensor assembly is installed in a positive sequence, the space voltage signal on the first falling edge s2 of the first pulse M1 is output first, and then the space voltage signal on the first rising edge s1 is output, at this time, the first falling edge s2 of the first pulse M1 coincides with the time point of the second rising edge s3 of the second pulse M2 of the potential-time curve that needs to be finally generated; with continued reference to 12, when the pre-positioning sensor assembly is installed in reverse order, the voltage-time curve first outputs a space voltage signal on a first rising edge s1 of the first pulse M1, and then outputs a space voltage signal on a first falling edge s2 of the first pulse M1, where the first rising edge s1 of the first pulse M1 coincides with a time point of a second falling edge s4 of a second pulse M2 of the potential-time curve that is to be finally generated. In this embodiment, the conversion between the space amount and the time amount can be performed by collecting the space voltage signals on the first falling edge s2 and the first rising edge s1 of the first pulse M1, so as to effectively improve the conversion efficiency and the reliability of the pre-positioning of the transparent wafer.
With continued reference to fig. 11, optionally, converting the space voltage signal into a time duty cycle signal according to a trigonometric relationship may include:
If the pre-positioning sensor assembly is mounted in positive sequence, the space voltage signal u is converted into a time duty cycle signal y according to the following formula:
Wherein U is the standard voltage of the wafer at the standard position; t is the fixed exposure period of the wafer; y is a standard time duty cycle signal of a standard position of the wafer; y is the same as U in time.
The voltage-time curves CCDout1 and CCDout2 output a light distribution photographing signal with a frame period T, and the second rising edge s3 of the second pulse M2 of the potential-time curve PW corresponds to the current wafer positioning edge position, and the exposure synchronizing signal PX has a negative pulse in each period T. Along with the shaking of the wafer positioning edge, the second rising edge s3 of the second pulse M2 of PW forms a different time duty cycle signal y (a certain position); let the standard non-eccentric standard time duty cycle signal be Y. If the pre-positioning sensor assembly is mounted in positive sequence, the wafer stuffing action is from left to right, the corresponding shielding increases (first voltage), and the duty ratio of the second pulse M2 of PW decreases. For example, in this embodiment, with the IG028CCD sensor, ccdout=5v (first voltage) when no wafer is fully exposed to the far left, ccdout=0v (second voltage) when fully exposed to the far right; and the standard non-eccentric position voltage ccdout=u (same as the duty cycle Y time point), and the other space voltage signal ccdout=u (corresponding to the duty cycle Y) at the certain position Y. The signal model is based on the trigonometric relationship (initial 0V vertex on right side of the figure) with:
Thereby obtaining the following steps:
Knowing T, Y and U, the space voltage signal U can be measured from the current arbitrary position, and calculated and quantized in real time to the time duty ratio y. As shown in fig. 8 and 9, the space point corresponding voltage is output by the g028 sensor, so in this embodiment, the MCU single chip microcomputer samples the voltage at high speed AD, and then the PCA outputs the PW signal at high speed to the wafer pre-positioning device, thereby improving the transformation efficiency.
Optionally, the programmable logic array PCA is used for programming, and may be set to perform timing calculation in a 16-bit timing manner, so as to control timing between the PX exposure signal and the PW periodic signal to start edge output, i.e. the PCA is responsible for strict frame synchronization. The capture of the exposure signal PX is effected by an INT0 interrupt, in INT0, the initial synchronization of the ADC and PCA resources is also effected.
With continued reference to fig. 12, optionally, converting the spatial voltage signal into a time duty cycle signal according to a trigonometric relationship may include:
If the pre-positioning sensor assembly is mounted in reverse order, the space voltage signal u is converted into a time duty cycle signal y according to the following formula:
wherein U is the standard voltage of the wafer at the standard position; y is the standard duty cycle of the standard position of the wafer; y is the same as U in time.
Similarly, the voltage-time curve CCDout outputs a light distribution photographing signal with a frame period T, and the exposure synchronizing signal PX has a negative pulse in each period T. The original CCD of the PA is output in reverse order, the wafer stuffing operation is from the right to the left of the time axis, the corresponding shielding is increased, and the duty ratio of the second pulse M2 of PW is reduced. Illustratively, after the transparent modification scheme of the duty-cycle PA of the present embodiment is replaced by the IG028CCD sensor, ccdout=5v (first voltage) when no wafer is fully exposed, ccdout=0v (second voltage) when full shielding is performed. Then from the graph signal model, according to the trigonometric relationship (initial 0V vertex on the left of the graph), there are:
Thereby obtaining the following steps:
That is, given Y and U, the voltage U can be measured from any current position, and calculated and quantized in real time as the time duty ratio Y.
Optionally, performing center pre-positioning and positioning edge pre-positioning on the wafer according to the time duty cycle signal may include: generating a potential-time curve according to the time duty cycle signal; the potential-time curve includes a second pulse M2; the first potential (for example, high level) of the second pulse M2 corresponds to a state in which the predetermined sensor assembly is exposed across the positioning edge; a second potential (e.g., low level) of the adjacent second pulse M2 corresponds to a state in which the predetermined sensor assembly is completely blocked by the wafer; the second pulse M2 further includes a second rising edge s3 and a second falling edge s4; the time duty ratio signal y is used for controlling the duty ratio of the second pulse M2, so that the first rising edge s1 and the second falling edge s4 are located at the same time point, and the first falling edge s2 and the second rising edge s3 are located at the same time point; and controlling the wafer to execute center pre-positioning and positioning edge pre-positioning according to the change speed rule of the potential-time curve. Specifically, for a high-speed potential-time curve, central pre-positioning data of the wafer are obtained through a slowly-changing envelope, and positioning edge pre-positioning data of the wafer are obtained through a rapidly-changing envelope. According to the embodiment, the potential-time curve is rapidly obtained according to the voltage-time curve, the completion signal is converted from the space quantity to the time quantity, and the pre-positioning recognition accuracy of the transparent wafer is improved.
Optionally, controlling the wafer execution center pre-positioning and the positioning edge pre-positioning according to the change speed rule of the potential-time curve may include: determining the center of the wafer according to the change speed rule of the potential-time curve, controlling the wafer to rotate around the center, and continuously acquiring the updated potential-time curve; and positioning the positioning edge according to the updated potential-time curve.
Specifically, the machine 25 controls the mechanical arm to grasp the wafer and place the wafer between the light emitter 22 and the receiver 23, the machine 25 can determine the center of the wafer according to the detection data of the plurality of groups of predetermined position sensors, and then controls the wafer to move along the X axis and/or the Y axis to determine the center of the wafer. The machine 25 is provided with a rotating shaft 24, the vacuum pump is controlled to adsorb the wafer on the rotating shaft 24 through the vacuum pipeline, the machine 25 controls the rotating motor to drive the rotating shaft to rotate so as to drive the wafer to rotate, and then the machine 25 rotates the positioning edge of the wafer to a designated position according to the detection data of a plurality of groups of pre-positioning sensors, so that the positioning of the wafer is completed.
On the basis of the embodiment, the voltage sampling precision and the time output minimum scale support in the wafer pre-positioning method are high in precision; bit width support voltage range and time length: support [0,5v ] voltage, [0,100]% duty cycle; sampling rate design, accurate synchronization of time sequence and high-speed operation: to the us level.
On the basis of the above embodiments, fig. 13 is a schematic structural diagram of a small signal noise suppression processing circuit according to an embodiment of the present invention. The spatial voltage signal CCDout can be firstly subjected to noise reduction processing, so that after a more accurate waveform is obtained, the spatial voltage signal is converted into a time duty ratio signal, and the accuracy of the preset position is further improved. Specifically, as shown in fig. 13, the small-signal noise suppression processing circuit includes a bias following module 31, a differential amplifying module 32, and a homodromous amplifying module 33. The first input end of the small signal noise suppression processing circuit inputs the signal shielding ground sin_gnd=v2, and the second input end inputs the space voltage signal sin=v1 sampled by the predetermined sensor. When the variable resistor RP1 is zero, the resistance values of the resistor R1 and the resistor R2 are the same, and the resistance values of the resistor R3 and the resistor R4 are the same, the first output voltage vout=vref+ (V2-V1) R3/r1=v2=sin, and the common mode noise is suppressed. Finally, the second output voltage sout= (1+rp2/R6) Vout, when the variable resistor RP2 is zero, sout=sin, but at this time, the common mode noise has been removed.
Based on the same conception, the embodiment of the invention also provides a wafer pre-positioning device which is suitable for the wafer pre-positioning method provided by any embodiment of the invention. As shown in fig. 14, fig. 14 is a schematic structural diagram of a wafer positioning device according to an embodiment of the invention. The wafer positioning apparatus may include:
The signal acquisition module 101 is used for acquiring a space voltage signal output by a predetermined sensor assembly of a wafer;
The signal conversion module 102 is configured to convert the space voltage signal into a time duty cycle signal according to the trigonometric equal ratio relationship;
A pre-positioning module 103, configured to perform center positioning and edge positioning on the wafer according to the time duty cycle signal.
In the embodiment of the invention, the space voltage signal is output by the prepositioning sensor group, the space voltage signal can be converted into the time duty ratio signal according to the triangular equal ratio relation, and the wafer is prepositioned according to the time duty ratio signal. Therefore, the problem that the transparent wafer cannot be positioned in advance in the prior art is avoided, a specific time duty ratio type sensor is not required to be used for data acquisition, the space voltage type sensor is used for data acquisition, for example, a Kidney IG028 sensor, signals output by the space voltage type sensor are converted into time variables from space variables through the processing of a controller, and the application range is expanded to wafers with various transparencies; the device can realize effective positioning in different practical machine models, and has the advantages of convenient application, low replacement cost, compatibility of multiple machine models and unified standard.
The embodiment of the invention also provides electronic equipment. Fig. 15 is a schematic structural diagram of an electronic device according to an embodiment of the present invention, where the electronic device includes a pre-positioning control processor 11, and the pre-positioning control processor 11 performs wafer pre-positioning on any wafer by using the pre-positioning method according to any embodiment of the present invention.
Electronic devices are intended to represent various forms of digital computers, such as laptops, desktops, workstations, personal digital assistants, servers, blade servers, mainframes, and other appropriate computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, a single-chip microcomputer, a wearable device (e.g., a helmet, glasses, a watch, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions, are meant to be exemplary only, and are not meant to limit implementations of the inventions described and/or claimed herein.
The pre-positioning control processor 11 may be various general and/or special purpose processing components with processing and computing capabilities. Some examples of the pre-positioning control processor 11 include, but are not limited to, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), various dedicated Artificial Intelligence (AI) computing chips, various processors running machine learning model algorithms, digital Signal Processors (DSPs), and any suitable processor, controller, microcontroller, etc. The prepositioning control processor 11 performs the various methods and processes described above, for example, a wafer prepositioning method.
In some embodiments, the wafer pre-positioning method may be implemented as a computer program tangibly embodied on a computer-readable storage medium, such as a memory unit. In some embodiments, part or all of the computer program may be loaded and/or installed onto the electronic device 10 via the ROM and/or the communication unit. When the computer program is loaded into RAM and executed by the wafer pre-positioning control processor 11, one or more of the steps of the wafer pre-positioning method described above may be performed. Alternatively, in other embodiments, the wafer-alignment control processor 11 may be configured to perform the wafer-alignment method in any other suitable manner (e.g., by means of firmware).
A computer program for carrying out methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus, such that the computer programs, when executed by the processor, cause the functions/acts specified in the flowchart and/or block diagram block or blocks to be implemented. The computer program may execute entirely on the machine, partly on the machine, as a stand-alone software package, partly on the machine and partly on a remote machine or entirely on the remote machine or server.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (11)
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