CN118475213A

CN118475213A - Composite substrate, radio frequency integrated device, preparation method and device

Info

Publication number: CN118475213A
Application number: CN202310133929.0A
Authority: CN
Inventors: 侯帅; 黄春奎; 徐文浩
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2023-02-08
Filing date: 2023-02-08
Publication date: 2024-08-09
Also published as: WO2024164767A1

Abstract

The embodiment of the application discloses a composite substrate, a radio frequency integrated device, a preparation method and a device, wherein the composite substrate comprises a support substrate and a trap layer which are sequentially stacked. Since the insulating polycrystalline compound material has a high density of defect states, the trap layer can be made to provide carrier traps. After the composite substrate is applied to the radio frequency integrated device, a functional device for transmitting radio frequency signals is formed on the composite substrate, an oxide layer is arranged between the functional device and the trap layer, and the movement of carriers at an interface can be limited through carrier traps in the trap layer, so that parasitic conductivity effects are restrained, and radio frequency loss is reduced.

Description

Composite substrate, radio frequency integrated device, preparation method and device

Technical Field

The application relates to the technical field of radio frequency, in particular to a composite substrate, a radio frequency integrated device, a preparation method and a preparation device.

Background

Typically, radio Frequency (RF) integrated devices are fabricated on a substrate. During operation of the rf integrated device, rf signals are propagated. The substrate is in interfacial contact with the oxide layer on the upper layer, and because the oxide layer material (exemplified by silicon oxide) has fixed charges, and movable ions (Na ⁺、K⁺ plasma), interface states, ionization trap charges and the like, static induction exists, so that a large amount of negative charges are accumulated on the surface of the substrate, parasitic conductance induction is generated, the carrier concentration on the surface of the substrate is high, the resistivity is reduced, the parasitic effect of the substrate is aggravated, larger radio frequency loss is caused, and the radio frequency performance is degraded.

Disclosure of Invention

The embodiment of the application provides a composite substrate, a radio frequency integrated device, a preparation method and a device, which are used for solving the problem of larger radio frequency loss caused by parasitic conductance effect in the substrate.

In a first aspect, an embodiment of the present application provides a radio frequency integrated device, including: a composite substrate and a functional device for transmitting radio frequency signals. Wherein, the compound substrate includes: the support substrate and the trap layer are sequentially stacked, and the trap layer is made of an insulating polycrystalline compound material. The functional device is arranged on one side of the trap layer, which is away from the supporting substrate, and an oxide layer is arranged between the functional device and the trap layer.

Based on the above embodiment, since the insulating polycrystalline compound material has a high density defect state, the trap layer can provide carrier traps, so that the carrier movement at the interface is limited by the carrier traps in the trap layer, the problem of the reduction of the resistivity of the support substrate in the application of the radio frequency integrated device can be solved, the radio frequency loss can be reduced, and the performance of the radio frequency integrated device can be improved.

In some examples, the material of the support substrate may be a high resistance silicon material. The material of the oxide layer may include, but is not limited to, siO ₂, such that by providing a trap layer of an insulating polycrystalline compound material between the high-resistance silicon support substrate and the oxide layer, carrier movement at the interface may be limited by carrier traps in the trap layer, which may improve the problem of greater radio frequency loss due to parasitic conductance effects in the high-resistance silicon support substrate in radio frequency integrated device applications, thereby improving the performance of the radio frequency integrated device.

In some possible embodiments, the polycrystalline compound material comprises a polycrystalline nitride material.

In some possible embodiments, the polycrystalline compound material includes, but is not limited to, at least one of AlN and AlScN.

In the embodiment of the application, when the polycrystalline AlN and/or the polycrystalline AlScN are adopted as the trap layer, the heat conductivity of the polycrystalline AlN and/or the polycrystalline AlScN is higher than that of the polycrystalline silicon, and the heat dissipation performance of the radio frequency integrated device can be improved after the composite substrate in the embodiment of the application is applied to the radio frequency integrated device.

In the embodiment of the application, when polycrystalline AlN and/or polycrystalline AlScN are used as the trap layer, the trap layer can be prepared by adopting a magnetron sputtering process, and the grinding and polishing process of CMP is not required to be additionally added. Further, the radio frequency loss can be further reduced by removing the oxide layer on the surface of the support substrate in situ before preparing the trap layer.

In the embodiment of the application, the trap layer is prepared by adopting a magnetron sputtering process, the process temperature is lower than that of polysilicon, the problem that a support substrate generates heat donor electrons can be solved, and the performance of the radio frequency integrated device is further improved.

Illustratively, in an embodiment of the present application, the functional device may include: one or more acoustic wave resonators. This allows the rf integrated device to be formed as a filter. According to the radio frequency integrated device provided by the embodiment of the application, as the insulating polycrystalline compound material has a high-density defect state, the trap layer can provide carrier traps, so that carrier movement at an interface is limited by the carrier traps in the trap layer, the problem of resistivity reduction of a supporting substrate during operation of the acoustic wave resonator can be solved, radio frequency loss is reduced, and the Q value of the acoustic wave resonator is improved.

Illustratively, and without limitation, the functional device may include the same type of acoustic wave resonator, or may include a plurality of different types of acoustic wave resonators.

In some possible embodiments, the acoustic wave resonator includes: a first piezoelectric thin film structure; the first piezoelectric film includes: and a first electrode, a piezoelectric material thin film layer, and a second electrode which are laminated on the oxide layer. This allows the acoustic wave resonator to be configured as a film bulk acoustic wave resonator (Film bulk acoustic resonator, FBAR).

Illustratively, in the embodiment of the present application, the oxide layer and the composite substrate may be independent of each other, i.e., the process of preparing the composite substrate is completed first. Thereafter, an oxide layer is formed during the FBAR process for fabricating the radio frequency integrated device. Or the oxide layer can be arranged in the composite substrate, namely the support substrate, the trap layer and the oxide layer are of a structure in the composite substrate, so that the oxide layer is formed in the process of preparing the composite substrate. Thereafter, an FBAR process for fabricating a radio frequency integrated device is performed.

In some possible embodiments, to further improve the performance of the FBAR, the acoustic wave resonator further includes: and a Bragg reflection layer disposed between the oxide layer and the first piezoelectric thin film structure. This optimizes the reflection efficiency of the FBAR by providing a bragg reflection layer.

In some possible embodiments, the acoustic wave resonator may also include: a second piezoelectric thin film structure; the second piezoelectric film structure may include: the piezoelectric material thin film layer is arranged on the oxide layer in a laminated mode, and the electrode layer is arranged on one side, away from the composite substrate, of the piezoelectric material thin film layer. The electrode layer includes a plurality of first electrodes and a plurality of second electrodes, which are alternately and alternately arranged at intervals. This makes it possible to set the acoustic wave resonator as a Surface-acoustic-wave resonator (SAW). Optionally, the plurality of first electrodes and the plurality of second electrodes are arranged in an interdigitated electrode manner.

Illustratively, in the embodiment of the present application, the oxide layer and the composite substrate may be independent of each other, i.e., the process of preparing the composite substrate is completed first. Thereafter, during a SAW process for fabricating a radio frequency integrated device, an oxide layer is formed. Or the oxide layer can be arranged in the composite substrate, namely the support substrate, the trap layer and the oxide layer are of a structure in the composite substrate, so that the oxide layer is formed in the process of preparing the composite substrate. Thereafter, a SAW process is performed to produce a radio frequency integrated device.

In the embodiment of the application, the piezoelectric material film layer and the composite substrate can be mutually independent, namely, the process for preparing the composite substrate is finished first. Then, in the SAW process of manufacturing the radio frequency integrated device, a piezoelectric material film layer is formed. Or the piezoelectric material film layer can be arranged in the composite substrate, namely the support substrate, the trap layer, the oxide layer and the piezoelectric material film layer are of a structure in the composite substrate, so that the oxide layer and the piezoelectric material film layer are formed in the process of preparing the composite substrate. Thereafter, a SAW process is performed to produce a radio frequency integrated device.

In some possible embodiments, to further improve the performance of the SAW, the reflection efficiency is improved, and the acoustic wave resonator further includes: and a Bragg reflection layer disposed between the oxide layer and the second piezoelectric thin film structure. This optimizes the reflection efficiency of the SAW by providing a bragg reflective layer.

In some examples, the material of the piezoelectric material thin film layer may be polycrystalline AlN. When the trap layer in the application also adopts polycrystalline AlN, the material of the trap layer is the same as that of the piezoelectric material film layer, so that the trap layer and the piezoelectric material film layer can be prepared from the same material, and the selection difficulty of the material is reduced. And the trap layer can be prepared by adopting a process for preparing the piezoelectric material film layer, so that the preparation difficulty of the process is reduced.

In some examples, the first electrode and the second electrode may be metallic materials.

In some possible embodiments, the bragg reflective layer includes: a plurality of first acoustic impedance layers and a plurality of second acoustic impedance layers; the acoustic impedance of the first acoustic impedance layer is greater than the acoustic impedance of the adjacent second acoustic impedance layer. The plurality of first acoustic impedance layers and the plurality of second acoustic impedance layers are alternately arranged, and the Bragg reflection layer is in contact with the oxide layer through the first acoustic impedance layers.

Illustratively, the acoustic impedance of each of the plurality of first acoustic impedance layers is the same. Therefore, the first acoustic impedance layer can be uniformly arranged, and the process preparation difficulty is reduced.

The material of the first acoustic impedance layer is not limited in the present application. For example, the material of the first acoustic impedance layer may include, but is not limited to: a metallic material (e.g., W, mo) or a dielectric material (e.g., alN, ta ₂O₅).

Illustratively, the acoustic impedance of each of the plurality of second acoustic impedance layers is the same. Therefore, the second sound impedance layer can be uniformly arranged, and the process preparation difficulty is reduced.

The application does not limit the material of the second sound impedance layer. For example, the material of the second acoustic impedance layer may include, but is not limited to: dielectric materials (e.g., siO ₂, siN).

Illustratively, the functional device may also be an integrated passive device (e.g., resistor, capacitor, inductor), such that the integrated passive device may be formed on a composite substrate with the rf integrated device configured as a filter.

In some possible embodiments, the radio frequency integrated device further comprises: a layer of semiconductor material disposed between the oxide layer facing away from the functional devices; the functional device includes: and the channel layer of the field effect transistor is formed by adopting the semiconductor material layer. This allows the rf integrated device to be configured as an rf switch.

Illustratively, in the embodiment of the present application, the oxide layer and the composite substrate may be independent of each other, i.e., the process of preparing the composite substrate is completed first. Then, in the field effect transistor process of preparing the radio frequency integrated device, an oxide layer is formed. Or the oxide layer can be arranged in the composite substrate, namely the support substrate, the trap layer and the oxide layer are of a structure in the composite substrate, so that the oxide layer is formed in the process of preparing the composite substrate. Thereafter, a field effect transistor process is performed for fabricating the radio frequency integrated device.

In an exemplary embodiment of the present application, the semiconductor material layer and the composite substrate may be independent of each other, that is, the process of preparing the composite substrate may be completed first. Then, in the process of manufacturing the field effect transistor of the radio frequency integrated device, a semiconductor material layer is formed. Or the semiconductor material layer can be arranged in the composite substrate, namely the support substrate, the trap layer, the oxide layer and the semiconductor material layer are of a structure in the composite substrate, so that the oxide layer and the semiconductor material layer are formed in the process of preparing the composite substrate. Thereafter, a field effect transistor process is performed for fabricating the radio frequency integrated device.

In a second aspect, embodiments of the present application further provide a radio frequency front end module, including the radio frequency integrated device in each embodiment of the first aspect and the first aspect. The performance of the radio frequency integrated device is better, so that the performance of the radio frequency front-end module comprising the radio frequency integrated device is also better. And the principle of the solution of the radio frequency front end module is similar to that of the radio frequency integrated device, so that the implementation of the radio frequency front end module can refer to the implementation of the radio frequency integrated device, and the repetition is omitted.

In a third aspect, an embodiment of the present application further provides an electronic device, including the second aspect and the radio frequency front end module in each embodiment of the second aspect. The performance of the radio frequency front end module is better, so that the performance of the electronic equipment comprising the radio frequency front end module is also better. And the principle of the electronic device for solving the problem is similar to that of the radio frequency front end module, so that the implementation of the electronic device can refer to the implementation of the radio frequency front end module, and the repetition is omitted.

By way of example, the electronic device may be a cellular telephone, a wireless fidelity (WIRELESS FIDELITY, wi-Fi) device, a bluetooth device, or the like. The electronic device may be various electronic devices such as a smart phone and a notebook computer. It should be noted that the rf-integrated device proposed by the embodiments of the present application is intended to include, but not be limited to, application in these and any other suitable types of electronic devices with rf functionality.

In a fourth aspect, embodiments of the present application provide a composite substrate for use in a radio frequency integrated device. Wherein, the compound substrate includes: a support substrate and a trap layer which are sequentially laminated; the trap layer is made of an insulating polycrystalline compound material.

In the composite substrate provided by the embodiment of the application, the insulating polycrystalline compound material has a high-density defect state, so that the trap layer can provide carrier traps. After the composite substrate is applied to the radio frequency integrated device, the parasitic conductivity effect can be restrained by limiting the carrier movement at the interface through the carrier trap in the trap layer, and the radio frequency loss is reduced.

And compared with the polycrystalline silicon material and the amorphous silicon material, the polycrystalline compound material can have higher heat conductivity, and after the composite substrate in the embodiment of the application is applied to the radio frequency integrated device, the heat dissipation performance of the radio frequency integrated device can be improved.

In some examples, the material of the support substrate may be a high resistance silicon material. The material of the oxide layer on the trap layer includes, but is not limited to, siO ₂. By arranging the trap layer of the insulating polycrystalline compound material between the high-resistance silicon support substrate and the oxide layer, carrier movement at the interface can be limited by carrier traps in the trap layer, and the problem of high radio frequency loss caused by parasitic conductivity effect in the high-resistance silicon support substrate in radio frequency integrated device application can be solved, so that the performance of the radio frequency integrated device is improved.

In some examples, the polycrystalline compound material comprises a polycrystalline nitride material. Embodiments of the polycrystalline nitride material are not limited by the present application, for example, polycrystalline compound materials include, but are not limited to, at least one of AlN and AlScN.

In some possible embodiments, the composite substrate further comprises an oxide layer disposed on a side of the trap layer facing away from the support substrate. The material of the oxide layer on the trap layer includes, but is not limited to, siO ₂. By arranging the trap layer of the insulating polycrystalline compound material between the high-resistance silicon support substrate and the oxide layer, carrier movement at the interface can be limited by carrier traps in the trap layer, and the problem of high radio frequency loss caused by parasitic conductivity effect in the high-resistance silicon support substrate in radio frequency integrated device application can be solved, so that the performance of the radio frequency integrated device is improved.

In some possible embodiments, the composite substrate further comprises: and the semiconductor material layer is arranged on one side of the oxide layer, which is away from the supporting substrate. The semiconductor material layer may be a low-resistance silicon material, for example. Thus, the radio frequency switch can be formed based on the composite substrate, and radio frequency loss is reduced.

In some possible embodiments, the composite substrate further comprises: and the piezoelectric material layer is arranged on one side of the oxide layer, which is away from the supporting substrate. Thus, a Surface acoustic wave resonator (SAW) can be formed based on the composite substrate, and radio frequency loss is reduced.

In a fifth aspect, an embodiment of the present application further provides a method for manufacturing a radio frequency integrated device, including: forming a composite substrate; and forming a functional device and an oxide layer arranged between the functional device and the trap layer on one side of the trap layer away from the supporting substrate. Wherein the composite substrate comprises: a support substrate and a trap layer which are sequentially laminated; the trap layer is made of an insulating polycrystalline compound material. According to the radio frequency integrated device provided by the embodiment of the application, as the insulating polycrystalline compound material has a high-density defect state, the trap layer can provide carrier traps, so that carrier movement at an interface is limited by the carrier traps in the trap layer, the problem of resistivity reduction of a support substrate can be solved, and radio frequency loss is reduced.

In a sixth aspect, an embodiment of the present application further provides a method for preparing a composite substrate, including: forming a supporting substrate; and depositing a trap layer on the supporting substrate, wherein the trap layer is made of an insulating polycrystalline compound material.

Based on the above embodiments, since the insulating polycrystalline compound material has a high density of defect states, the trap layer can be enabled to provide carrier traps. After the composite substrate is applied to the radio frequency integrated device, carrier movement at an interface can be limited by carrier traps in the trap layer, so that the problem of resistivity reduction of the support substrate in the application of the radio frequency integrated device can be solved, and radio frequency loss is reduced.

In some possible embodiments, the polycrystalline compound material comprises at least one of AlN and AlScN.

In some possible embodiments, the method further comprises: an oxide layer is deposited on a side of the trap layer facing away from the support substrate. Optionally, the material of the oxide layer includes, but is not limited to, siO ₂.

In some possible embodiments, the method further comprises: and forming a piezoelectric material layer on one side of the oxide layer, which is away from the supporting substrate. This allows the composite substrate to integrate the piezoelectric material layers.

In some possible embodiments, the method further comprises: and forming a semiconductor material layer on one side of the oxide layer, which is away from the supporting substrate.

Drawings

In order to more clearly describe the embodiments of the present application or the technical solutions in the background art, the following description will describe the drawings that are required to be used in the embodiments of the present application or the background art.

Fig. 1 is a schematic diagram of a partial structure of an electronic device according to an embodiment of the present application;

FIG. 2a is a schematic structural diagram of a composite substrate according to an embodiment of the present application;

FIG. 2b is a schematic structural view of yet another composite substrate according to an embodiment of the present application;

FIG. 3 is a schematic structural view of yet another composite substrate according to an embodiment of the present application;

FIG. 4 is a schematic structural view of yet another composite substrate according to an embodiment of the present application;

FIG. 5a is a flowchart of a method for preparing a composite substrate according to an embodiment of the present application;

FIG. 5b is a flowchart of another method for fabricating a composite substrate according to an embodiment of the present application;

FIG. 6a is a flowchart of another method for preparing a composite substrate according to an embodiment of the present application;

FIG. 6b is a flowchart of another method for fabricating a composite substrate according to an embodiment of the present application;

fig. 7a and fig. 7b are schematic structural diagrams during the process of preparing a composite substrate according to an embodiment of the present application;

Fig. 8a is a schematic structural diagram of an rf integrated device according to an embodiment of the present application;

fig. 8b is a schematic structural diagram of yet another rf integrated device according to an embodiment of the present application;

fig. 9a is a schematic structural diagram of yet another rf integrated device according to an embodiment of the present application;

fig. 9b is a schematic structural diagram of yet another rf integrated device according to an embodiment of the present application;

FIG. 10 is a schematic diagram of a simulation of an embodiment of the present application;

fig. 11 is a schematic structural diagram of yet another rf integrated device according to an embodiment of the present application;

Fig. 12 is a schematic structural diagram of yet another rf integrated device according to an embodiment of the present application;

fig. 13 is a flowchart of a method for manufacturing a radio frequency integrated device according to an embodiment of the present application;

Fig. 14 is a flowchart of a method for manufacturing a radio frequency integrated device according to another embodiment of the present application;

fig. 15 is a flowchart of a method for manufacturing a radio frequency integrated device according to another embodiment of the present application;

Fig. 16a to 16c are schematic structural diagrams of a process for manufacturing a radio frequency integrated device according to an embodiment of the present application.

Reference numerals:

A 100-baseband chip; 200-a radio frequency transceiver unit; 300-a radio frequency front end module; 310-a transmit chain; 320-a receive link; 400-antenna system; 410-a main set antenna; 420-diversity antennas; 10-a composite substrate; 11-a support substrate; 12-a trap layer; a 13-oxide layer; 14-a layer of semiconductor material; 15-a layer of piezoelectric material; 15' -piezoelectric wafer; 16-bonding the wafer; 20_1-a first piezoelectric thin film structure; 20_2-a second piezoelectric thin film structure; 21-a first electrode; 22-a thin film layer of piezoelectric material; 23-a second electrode; a 30-Bragg reflection layer; 31-a first acoustic impedance layer; 32-a second acoustic impedance layer; 40-function device; a G-gate; s-source electrode; d-drain.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings.

The terminology used in the following examples is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the specification of the present application and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include, for example, "one or more" such forms of expression, unless the context clearly indicates to the contrary.

Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.

Also, in the description of the present application, "at least one" means one or more, wherein a plurality means two or more. In view of this, the term "plurality" may also be understood as "at least two" in embodiments of the present application. "and/or", describes an association relationship of an association object, and indicates that there may be three relationships, for example, a and/or B, and may indicate: a exists alone, A and B exist together, and B exists alone. The character "/", unless otherwise specified, generally indicates that the associated object is an "or" relationship. In addition, it should be understood that in the description of the present application, the words "first," "second," and the like are used merely for distinguishing between the descriptions and not for indicating or implying any relative importance or order.

Also, "connected" in embodiments of the present application refers to an electrical connection, and two electrical components may be connected directly or indirectly between the two electrical components. For example, a may be directly connected to B, or indirectly connected to B through one or more other electrical components, for example, a may be directly connected to B, or directly connected to C, and C may be directly connected to B, where a and B are connected through C.

In addition, the same reference numerals in the drawings denote the same or similar structures, and thus a repetitive description thereof will be omitted. The words expressing the positions and directions described in the present application are described by taking the drawings as an example, but can be changed according to the needs, and all the changes are included in the protection scope of the present application. The drawings of the present application are merely schematic representations of relative positional relationships and are not intended to represent true proportions.

The composite substrate, the radio frequency integrated device, the preparation method and the device provided by the embodiment of the application are used for solving the problem of larger radio frequency loss caused by parasitic conductance effect in the substrate. The composite substrate provided by the embodiment of the application can be applied to various types of radio frequency integrated devices (such as filters and radio frequency switches). The radio frequency integrated device provided by the embodiment of the application can be applied to a radio frequency front-end module. Further, the radio frequency integrated device provided by the embodiment of the application can be applied to electronic equipment with a radio frequency front end module. For example, the electronic device may be a cellular telephone, a wireless fidelity (WIRELESS FIDELITY, wi-Fi) device, a bluetooth device, or the like. The electronic device may be various electronic devices such as a smart phone and a notebook computer. It should be noted that the rf-integrated device proposed by the embodiments of the present application is intended to include, but not be limited to, application in these and any other suitable types of electronic devices with rf functionality.

For example, an electronic device such as a mobile phone may include a display screen, a circuit board, etc., on which electronic devices such as a processor module, various controller modules, a memory module, a communication module, a radio frequency front end module, a power management module, etc., are typically carried. A circuit board is understood to be the main circuit board of an electronic device.

Fig. 1 schematically illustrates a partial structure of an electronic device according to an embodiment of the present application. Referring to fig. 1, the electronic device may further include: the base band chip 100 and the radio frequency system, the radio frequency system is connected with the base band chip 100. The rf system includes an rf transceiver 200, an rf front-end module 300, and an antenna system 400, where the antenna system 400 includes multiple (e.g., 4) antennas configured to transmit rf signals in different frequency bands. The rf transceiver 200 is connected to a side of the rf front-end module 300 facing away from the antenna, and the rf front-end module 300 is connected to the antenna through an external interface. The rf front-end module 300 has an rf channel that includes a transmit chain 310 and a receive chain 320. The number of the transmitting links 310 and the receiving links 320 may be one or more, and the transmitting links 310 may be used for transmitting radio frequency signals in a plurality of different frequency bands. The receiving link 320 may receive radio frequency signals in a variety of different frequency bands. The transmit chain 310 and the receive chain 320 form a radio frequency channel in the radio frequency front end module 300.

The baseband chip 100 may be disposed on a main circuit board of an electronic device, such as a mobile phone 100, and is configured to perform digital baseband signal processing, and encode and decode digital baseband signals. The rf transceiver 200 and the rf front-end module 300 are disposed on a main circuit board of an electronic device, such as the mobile phone 100. The rf transceiver 200 is configured to perform conversion between a digital baseband signal and an analog rf signal, process the digital baseband signal sent by the baseband chip 100 into an rf analog signal, and then transmit the rf analog signal to the transmitting link 310 of the rf front-end module 300, or receive the rf analog signal transmitted by the receiving link 320, and convert the rf analog signal into the digital baseband signal to send to the baseband chip 100.

Wherein the multiple antennas in the antenna system 400 may be divided into a main set antenna 410 and a diversity antenna 420. The rf front-end module 300 is configured to send rf analog signals to the main set antenna 410, or receive rf analog signals from the main set antenna 410 and the diversity antenna 420, so as to implement processes such as amplifying and filtering the rf analog signals.

The baseband chip 100 and the radio frequency system may form the wireless communication system conductive end of the electronic device. When the antenna system 400 receives the rf signal and enters the rf front-end module 300, the rf front-end module 300 may switch the received rf signal (i.e., the received signal) to the corresponding receiving link 320, amplify, filter, mix, etc. the received signal by the rf device in the receiving link 320, and then input to the baseband chip 100 for demodulation.

Correspondingly, when the radio frequency transceiver unit 200 receives the radio frequency signal (i.e. the transmitting signal) output by the baseband chip 100, the transmitting signal is subjected to mixing, amplifying, filtering and other processes, and is output to the corresponding transmitting link 310 in the radio frequency front end module 300 through the frequency band where the transmitting signal is located, and then the transmitting signal is switched to the corresponding main set antenna 410 through the radio frequency front end module 300 for radiation. The rf transceiver 200 is further configured to control switching between different transmitting links 310 and receiving links 320 in the rf front-end module 300. Illustratively, the radio frequency transceiver unit may include, but is not limited to, a radio frequency transceiver.

Thus, the electronic equipment can perform wireless communication with the network equipment or other electronic equipment through the wireless network by the wireless communication system conduction end so as to complete information receiving and transmitting with the network equipment or other electronic equipment. The network device may include a server or a base station, among others.

Illustratively, the transmit chain 310 may include, but is not limited to, being formed of a sequential connection of a power amplifier, a filter, and a radio frequency switch, etc., and the receive chain 320 may include, but is not limited to, being formed of a sequential connection of a low noise amplifier, a filter, and a radio frequency switch, etc. Or in some embodiments transmit chain 310 and receive chain 320 may take other different forms. In this embodiment, the components in the transmission link 310 and the reception link 320 are not further limited, and specific reference may be made to the description in the related art.

The rf integrated devices in embodiments of the present application may include, but are not limited to, filters and rf switches in the transmit chain 310 and the receive chain 320. That is, the rf integrated devices in embodiments of the present application may include, but are not limited to, filters and/or rf switches.

Typically, the rf integrated device uses a high-resistance silicon material as the substrate. During operation of the rf integrated device, rf signals are propagated. When the silicon oxide layer contacts with the interface of the high-resistance silicon substrate, the silicon oxide layer has fixed charges, movable ions (Na ⁺、K⁺ plasma), interface states, ionization trap charges and the like, so that the charges in the silicon oxide layer induce a layer of high-conductivity inversion channel on the surface of the high-resistance silicon substrate, the surface resistivity of the high-resistance silicon substrate is reduced, the parasitic effect of the substrate is aggravated, and the radio frequency performance is degraded, so that larger radio frequency loss is caused.

Currently, by providing a trap layer made of polysilicon or polysilicon between a substrate and an oxide layer thereabove, carrier traps are enriched in the trap layer due to a certain number of grain boundary defects in the amorphous silicon layer or the polysilicon layer. Therefore, carrier movement at the interface is limited by utilizing the carrier trap in the trap layer, so that parasitic conductance effect is restrained, and radio frequency loss is reduced.

However, amorphous silicon or polysilicon has a low thermal conductivity, which affects the heat dissipation performance of the rf integrated device. In addition, the temperature of the preparation process of the polysilicon is high, usually 400-600 ℃, and the high-resistance silicon substrate is easy to generate heat donor electrons, so that the performance of the radio frequency integrated device is reduced. And, the preparation process of polysilicon generally uses a low pressure Chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) process or an atmospheric pressure Chemical vapor deposition (Atmospheric Pressure Chemical Vapor Deposition, APCVD) process, resulting in poor interface roughness and flatness, and generally requires an additional lapping and polishing process of Chemical-mechanical polishing (Chemical-MECHANICAL POLISHING, CMP).

Therefore, preparing a composite substrate with high thermal conductivity, low loss and high electrical resistance is a challenge in the art.

The embodiment of the application provides a composite substrate applied to a radio frequency integrated device, which is used for solving the problem of larger radio frequency loss caused by parasitic conductance effect in the substrate. And, the performance of high thermal conductivity and high resistance can also be achieved.

Fig. 2a schematically illustrates a structure of a composite substrate according to an embodiment of the present application. Fig. 2b schematically illustrates a structure of a further composite substrate according to an embodiment of the present application. Fig. 3 schematically illustrates a structure of yet another composite substrate according to an embodiment of the present application. Fig. 4 schematically illustrates a structure of yet another composite substrate according to an embodiment of the present application.

Referring to fig. 2a to 4, a composite substrate 10 for an rf integrated device according to an embodiment of the present application includes: a support substrate 11 and a trap layer 12 which are stacked in this order; the trap layer 12 is made of an insulating polycrystalline compound material.

Referring to fig. 2b, in some examples, the composite substrate 10 further comprises an oxide layer 13 disposed on a side of the trap layer 12 facing away from the support substrate 11. Wherein the material of the oxide layer on the trap layer includes, but is not limited to, siO ₂. By arranging the trap layer of the insulating polycrystalline compound material between the high-resistance silicon support substrate and the oxide layer, carrier movement at the interface can be limited by carrier traps in the trap layer, and the problem of high radio frequency loss caused by parasitic conductivity effect in the high-resistance silicon support substrate in radio frequency integrated device application can be solved, so that the performance of the radio frequency integrated device is improved.

Illustratively, the radio frequency integrated device may be a filter, the filter comprising one or more resonators. Referring to fig. 2a and 2b, in some examples, a resonator may be formed based on the structure of the composite substrate 10 shown in fig. 2a and 2b, so that the rf integrated device may be a filter, which may reduce rf loss when the filter is operated.

Referring to fig. 3, in some examples, the composite substrate 10 further includes: a layer 14 of semiconductor material arranged on the side of the oxide layer 13 facing away from the support substrate 11. Illustratively, the semiconductor material layer 14 may be a low resistance silicon material. This may form a field effect transistor based on the composite substrate 10, so that the formed rf integrated device may be an rf switch. When the radio frequency switch works, radio frequency loss can be reduced.

Referring to fig. 4, in some examples, the composite substrate 10 further includes: a layer of piezoelectric material 15 arranged on the side of the oxide layer 13 facing away from the support substrate 11. This allows a Surface acoustic wave resonator (SAW) to be formed based on the composite substrate 10, reducing radio frequency loss.

Fig. 5a schematically illustrates a flowchart of a method for manufacturing a composite substrate according to an embodiment of the present application.

Referring to fig. 5a, a method for preparing a composite substrate according to an embodiment of the present application may include the following steps:

s10, forming a supporting substrate.

In some examples, taking the composite substrate shown in fig. 2a as an example, the support substrate 11 is deposited using a high resistance silicon material.

S20, depositing a trap layer on the supporting substrate, wherein the trap layer is made of an insulating polycrystalline compound material.

In some examples, taking the composite substrate shown in fig. 2a as an example, a polycrystalline nitride material (including, for example, but not limited to, at least one of AlN and AlScN) is used to deposit the trap layer 12 on the support substrate 11.

Fig. 5b schematically shows a flowchart of a method for preparing a further composite substrate according to an embodiment of the present application.

Referring to fig. 5b, a method for preparing a composite substrate according to an embodiment of the present application may include the following steps:

s10, forming a supporting substrate.

In some examples, taking the composite substrate shown in fig. 2b as an example, the support substrate 11 is deposited using a high resistance silicon material.

In some examples, taking the composite substrate shown in fig. 2b as an example, a layer of traps 12 is deposited on the support substrate 11 using a polycrystalline nitride material (including, for example, but not limited to, at least one of AlN and AlScN).

S30, depositing an oxide layer on one side of the trap layer, which is away from the supporting substrate.

In some examples, using the composite substrate shown in fig. 2b as an example, siO ₂ is used to deposit an oxide layer 13 on the trap layer 12.

Fig. 6a schematically illustrates a flowchart of a method for preparing a further composite substrate according to an embodiment of the present application.

Referring to fig. 6a, a method for preparing a composite substrate according to an embodiment of the present application may include the following steps:

s10, forming a supporting substrate.

In some examples, the support substrate 11 is formed by deposition using a high resistance silicon material, taking the composite substrate shown in fig. 3 as an example.

In some examples, taking the composite substrate shown in fig. 3 as an example, a layer of traps 12 is deposited on a support substrate 11 using a polycrystalline nitride material (including, for example, at least one of AlN and AlScN).

In some examples, using the composite substrate shown in fig. 3 as an example, siO ₂ is used to deposit oxide layer 13 on trap layer 12.

And S40, forming a semiconductor material layer on one side of the oxide layer, which is away from the supporting substrate.

In some examples, using the composite substrate shown in fig. 3 as an example, a layer 14 of semiconductor material is deposited on the oxide layer 13 using a low resistance silicon material.

Fig. 6b schematically shows a flowchart of a method for preparing a further composite substrate according to an embodiment of the application.

Referring to fig. 6b, a method for preparing a composite substrate according to an embodiment of the present application may include the following steps:

s10, forming a supporting substrate.

In some examples, the support substrate 11 is formed by deposition using a high resistance silicon material, taking the composite substrate shown in fig. 4 as an example. For example, first: a silicon wafer is prepared as a support substrate. Wherein the resistivity of the silicon wafer is greater than 5000ohm cm.

In some examples, taking the composite substrate shown in fig. 4 as an example, a layer of traps 12 is deposited on a support substrate 11 using a polycrystalline nitride material (including, for example, at least one of AlN and AlScN). For example, referring to fig. 7a, a trap layer 12 is prepared on a silicon wafer surface using a deposition method, including, but not limited to, low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD), the trap layer thickness being 1nm to 10um.

In some examples, using the composite substrate shown in fig. 4 as an example, siO ₂ is deposited on the trap layer 12 to form an oxide layer 13. For example, referring to fig. 7a, a deposition method, such as including but not limited to low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD), is used to deposit SiO ₂ oxide layer 13 on trap layer 12. Alternatively, the thickness of the SiO ₂ oxide layer 13 is 400nm to 600nm. In practical applications, the thickness of the SiO ₂ oxide layer 13 may be selected from 400nm to 600nm, which is not limited herein.

For example, the thickness of the SiO ₂ oxide layer 13 is 400nm, 500nm, 600nm.

And S40, forming a piezoelectric material layer on one side of the oxide layer, which is away from the supporting substrate.

In some examples, taking the composite substrate shown in fig. 4 as an example, step S40 may include the steps of: referring to fig. 7a, first, a piezoelectric wafer (the material of which includes, for example, but not limited to, lithium tantalate) 15' of the same size as a silicon wafer is prepared as a functional substrate. Then, ion implantation and element implantation are performed on the surface of the piezoelectric wafer 15', so that chemical bond breakage is realized, and the implanted piezoelectric wafer 15' (implantation depth of about 1 um) is obtained. Then, a plasma activation treatment process is adopted to respectively perform activation treatment on the surface of the SiO ₂ oxide layer 13 and the surface of the implanted piezoelectric wafer 15', and then the surface of the SiO ₂ oxide layer 13 is bonded with the piezoelectric wafer 15', so as to obtain a bonding wafer 16. Thereafter, referring to fig. 7b, the bonded wafer 16 is subjected to a temperature annealing process and a Chemical Mechanical Polishing (CMP) process, so that the piezoelectric wafer 15 'is dissociated and thinned at the entire implantation interface, thereby forming a thinned piezoelectric wafer 15', and obtaining the composite substrate 10.

Optionally, the thickness of the thinned piezoelectric wafer 15' is 50nm to 1um. In practical applications, the thickness of the thinned piezoelectric wafer 15' may be selected from 50nm to 1um, which is not limited herein.

Fig. 8a schematically illustrates a structure of a radio frequency integrated device according to an embodiment of the present application. Fig. 8b schematically illustrates a structure of yet another rf integrated device according to an embodiment of the present application. Fig. 9a schematically illustrates a structure of yet another rf integrated device according to an embodiment of the present application. Fig. 9b schematically illustrates a structure of yet another rf integrated device according to an embodiment of the present application.

Referring to fig. 8a to 9b, an rf integrated device according to an embodiment of the present application includes: a composite substrate 10 and a functional device 40 for transmitting radio frequency signals. Wherein the composite substrate 10 comprises: the support substrate 11 and the trap layer 12 are stacked in this order, and the trap layer 12 is made of an insulating polycrystalline compound material. The functional device 40 is arranged on the side of the trap layer 12 facing away from the support substrate 11, with the oxide layer 13 between the functional device 40 and the trap layer 12. Also, the embodiment of the composite substrate 10 may refer to the above description, and will not be described herein.

According to the radio frequency integrated device provided by the embodiment of the application, as the insulating polycrystalline compound material has a high-density defect state, the trap layer can provide carrier traps, so that the carrier movement at the interface is limited by the carrier traps in the trap layer, the parasitic conductivity effect is inhibited, the radio frequency loss is reduced, and the performance of the radio frequency integrated device is improved.

Illustratively, in the embodiment of the present application, the oxide layer and the composite substrate may be independent of each other, i.e., the process of preparing the composite substrate is completed first. Thereafter, an oxide layer is formed during the process of fabricating the radio frequency integrated device. Or the oxide layer can be arranged in the composite substrate, namely the support substrate, the trap layer and the oxide layer are of a structure in the composite substrate, so that the oxide layer is formed in the process of preparing the composite substrate. Thereafter, a process for preparing the radio frequency integrated device is performed.

Illustratively, referring to fig. 8a, the acoustic wave resonator may comprise: the first piezoelectric film structure 20_1. Wherein the first piezoelectric film 20_1 may include: the first electrode 21, the piezoelectric material thin film layer 22, and the second electrode 23 provided on the oxide layer 13 are stacked. This allows the acoustic wave resonator to be configured as a film bulk acoustic wave resonator (Film bulk acoustic resonator, FBAR).

Illustratively, referring to FIG. 8b, the acoustic wave resonator may also include: a second piezoelectric thin film structure 20_2; the second piezoelectric film structure 20_2 may include: a piezoelectric material thin film layer 22 provided on the oxide layer 13, and an electrode layer provided on a side of the piezoelectric material thin film layer 22 facing away from the composite substrate 10 are laminated. The electrode layer includes a plurality of first electrodes 21 and a plurality of second electrodes 23, and the plurality of first electrodes 21 and the plurality of second electrodes 23 are alternately and alternately arranged at intervals. This makes it possible to set the acoustic wave resonator as a Surface-acoustic-wave resonator (SAW). Alternatively, the plurality of first electrodes 21 and the plurality of second electrodes 23 are provided in the form of interdigital electrodes.

To further improve the performance of the acoustic wave resonator and increase the reflection efficiency, referring to fig. 9a, the acoustic wave resonator may further include: and a Bragg reflection layer 30 disposed between the oxide layer 13 and the first piezoelectric thin film structure 20_1. Thus, by providing the bragg reflection layer 30 between the oxide layer 13 and the first piezoelectric thin film structure 20_1, the reflection efficiency of the FBAR can be optimized, and the performance of the FBAR can be improved.

To further improve the performance of the acoustic wave resonator and increase the reflection efficiency, referring to fig. 9b, the acoustic wave resonator may further include: and a Bragg reflection layer 30 disposed between the oxide layer 13 and the second piezoelectric thin film structure 20_2. Thus, by providing the Bragg reflection layer 30 between the oxide layer 13 and the second piezoelectric thin film structure 20_2, the reflection efficiency of the SAW can be optimized, and the SAW performance can be improved.

In some examples, referring to fig. 9a and 9b, the bragg reflective layer 30 may include: a plurality of first acoustic impedance layers 31 and a plurality of second acoustic impedance layers 32. The acoustic impedance of the first acoustic impedance layer 31 is greater than the acoustic impedance of the adjacent second acoustic impedance layer 32. The plurality of first acoustic impedance layers 31 and the plurality of second acoustic impedance layers 32 are alternately arranged, and the bragg reflection layer 30 is in contact with the oxide layer 13 through the first acoustic impedance layers 31.

Illustratively, the number of first acoustic impedance layers is the same as the number of second acoustic impedance layers.

Illustratively, to achieve temperature compensation, the material of the oxide layer may also include a material capable of achieving temperature compensation.

The application also takes the radio frequency integrated device shown in fig. 3 and the trap layer material is polycrystalline AlN as an example, and the radio frequency integrated device is subjected to simulation, and the result is shown as a curve L1 in fig. 10. In addition, the present application also performs simulation on the conventional rf integrated device using polysilicon as the trap layer (i.e., the rf integrated device when the trap layer material in the rf integrated device shown in fig. 3 of the present application is replaced by polysilicon), and the result is shown by a curve L2 in fig. 10. And, the present application also performs simulation on the existing rf integrated device without the trap layer (i.e., the rf integrated device when the trap layer is removed in the rf integrated device shown in fig. 3 of the present application), and the result thereof is referred to a curve L3 in fig. 10. As can be seen from fig. 10, the present application adopts polycrystalline AlN as the trap layer, and has a significantly improved Q-value compared with the conventional rf integrated device without the trap layer. In addition, the application adopts the polycrystalline AlN as the trap layer, and compared with the radio frequency integrated device adopting the polycrystalline silicon as the trap layer in the prior art, the Q value is similar. I.e., polycrystalline AlN does not reduce the Q of the rf integrated device compared to polycrystalline silicon. In addition, compared with polysilicon, the polycrystalline AlN has low process temperature and low thermal conductivity, so that the heat radiation performance of the radio frequency integrated device can be improved, and the process integration can be simpler. Therefore, the radio frequency integrated device using polycrystalline AlN as the trap layer can have greater application advantages than the radio frequency integrated device using polycrystalline silicon as the trap layer. In fig. 10, the abscissa indicates frequency and the ordinate indicates Q value.

Fig. 11 schematically illustrates a structure of yet another rf integrated device according to an embodiment of the present application.

Referring to fig. 11, in the present embodiment, the radio frequency integrated device includes: a composite substrate 10 and an electrode layer. Wherein the composite substrate 10 comprises: the support substrate 11, the trap layer 12, the oxide layer 13, and the piezoelectric material layer 15 are stacked in this order. Only the differences between the present embodiment and the above-described embodiments are described below, and their details are not repeated here. Also, the embodiment of the composite substrate 10 may refer to the above description, and will not be described herein.

Illustratively, referring to fig. 11, an electrode layer is formed on the piezoelectric material layer 15. The electrode layer includes a plurality of first electrodes 21 and a plurality of second electrodes 23, and the plurality of first electrodes 21 and the plurality of second electrodes 23 are alternately and alternately arranged at intervals. This makes it possible to set the acoustic wave resonator as a Surface-acoustic-wave resonator (SAW). Alternatively, the plurality of first electrodes 21 and the plurality of second electrodes 23 are provided in the form of interdigital electrodes.

Fig. 12 schematically illustrates a structure of yet another rf integrated device according to an embodiment of the present application.

Referring to fig. 12, in the present embodiment, the radio frequency integrated device includes: a composite substrate 10 and a field effect transistor. I.e. the functional device comprises a field effect transistor. Wherein the composite substrate 10 comprises: the support substrate 11, the trap layer 12, the oxide layer 13, and the semiconductor material layer 14 are sequentially stacked, and both the oxide layer and the semiconductor material layer are provided in the composite substrate. Only the differences between the present embodiment and the above-described embodiments are described below, and their details are not repeated here. Also, the embodiment of the composite substrate 10 may refer to the above description, and will not be described herein.

Illustratively, the channel layer of the field effect transistor may be formed using a layer of semiconductor material.

Optionally, the material of the semiconductor material layer 14 includes, but is not limited to, a low resistance silicon material.

In an exemplary embodiment of the present application, referring to fig. 12, the field effect transistor is disposed on a side of the oxide layer 13 facing away from the supporting substrate 11, so that the rf integrated device may be an rf switch. Wherein G represents the gate of the field effect transistor, S represents the source of the field effect transistor, and D represents the drain of the field effect transistor. After the radio frequency switch is applied to the radio frequency integrated device, the insulating polycrystalline compound material has high-density defect state, so that the trap layer 12 can provide carrier traps, and carrier movement at an interface is limited by the carrier traps in the trap layer 12, and radio frequency loss can be reduced.

Alternatively, the specific structure of the field effect transistor is not limited in the present application. Illustratively, the field effect transistor may be, but is not limited to being: one or more of planar Field effect transistors (PLANAR FIELD-Effect Transistor, PLANAR FET), fin Field effect transistors (Fin Field-Effect Transistor, fin FET), surrounding gate Field effect transistors (Gate All Around Field-Effect Transistor, GAAFET), and Silicon-On-Insulator FIELD EFFECT Transistor (soi FET).

Fig. 13 is a flowchart illustrating a method for manufacturing a radio frequency integrated device according to an embodiment of the present application.

Referring to fig. 13, a method for manufacturing a radio frequency integrated device according to an embodiment of the present application may include the following steps:

S100, forming a composite substrate. The composite substrate includes: a support substrate and a trap layer which are sequentially laminated; the trap layer is made of insulating polycrystalline compound material.

In some examples, the implementation of step S100 may refer to the embodiment shown in fig. 5a and will not be described herein.

And S200, forming a functional device on one side of the trap layer, which is away from the support substrate, and forming an oxide layer between the functional device and the trap layer.

In some examples, step S200 includes: referring to fig. 16a, a SiO ₂ oxide layer 13 is formed on the trap layer 12 using a deposition process using a SiO ₂ material. Alternatively, the step of forming the SiO ₂ oxide layer 13 on the trap layer 12 using a deposition process may be combined with step S100, thereby making the oxide layer as a film structure in the composite substrate.

In some examples, taking the structure of the rf integrated device shown in fig. 9a as an example, forming the functional device includes: a bragg reflector layer is formed on the composite substrate prior to forming the first piezoelectric film structure. Illustratively, first, referring to fig. 16b, a first acoustic impedance layer 31 is grown on an oxide layer 13 using a W material, and the first acoustic impedance layer 31 is patterned to form a desired pattern for the first acoustic impedance layer 31. Thereafter, referring to fig. 16c, a second acoustic impedance layer 32 is grown on the first acoustic impedance layer 31 using SiO ₂ material, and the second acoustic impedance layer 32 is patterned to form a desired pattern on the second acoustic impedance layer 32. Thereafter, referring to fig. 16c, the process of preparing the first acoustic impedance layer 31 and the second acoustic impedance layer 32 is repeated to form the first acoustic impedance layer 31 and the second acoustic impedance layer 32 which are sequentially repeated to form the bragg reflection layer 30.

Thereafter, a first piezoelectric thin film structure is formed. Illustratively, forming the first piezoelectric film structure may include: referring to fig. 9a, first, a first electrode 21 is formed on a bragg reflection layer 30 using a metal material. Thereafter, a piezoelectric material thin film layer 22 is grown on the first electrode 21 using a polycrystalline AlN material. Thereafter, a second electrode 23 is deposited on the piezoelectric material thin film layer 22, and the second electrode 23 and the piezoelectric material thin film layer 22 are subjected to patterning processing so as to form a desired pattern.

In other examples, taking the structure of the rf integrated device shown in fig. 9b as an example, forming the functional device includes: a bragg reflective layer is formed on the composite substrate prior to forming the second piezoelectric film structure. Illustratively, first, referring to fig. 16b, a first acoustic impedance layer 31 is grown on an oxide layer 13 using a W material, and the first acoustic impedance layer 31 is patterned to form a desired pattern for the first acoustic impedance layer 31. Thereafter, referring to fig. 16c, a second acoustic impedance layer 32 is grown on the first acoustic impedance layer 31 using SiO ₂ material, and the second acoustic impedance layer 32 is patterned to form a desired pattern on the second acoustic impedance layer 32. Thereafter, referring to fig. 16c, the process of preparing the first acoustic impedance layer 31 and the second acoustic impedance layer 32 is repeated to form the first acoustic impedance layer 31 and the second acoustic impedance layer 32 which are sequentially repeated to form the bragg reflection layer 30.

Thereafter, a second piezoelectric thin film structure is formed. Illustratively, forming the second piezoelectric thin film structure may refer to fig. 9b, where first, a thin film layer 22 of piezoelectric material is grown on the bragg reflector layer 30 using a polycrystalline AlN material. Thereafter, an electrode layer is formed on the bragg reflection layer 30 using a metal material. The electrode layer is patterned to form the desired pattern of the first electrode 21 and the second electrode 23.

Fig. 14 is a flowchart schematically illustrating a method for manufacturing a radio frequency integrated device according to another embodiment of the present application.

Referring to fig. 14, a method for manufacturing a radio frequency integrated device according to an embodiment of the present application may include the following steps:

S100, forming a composite substrate. The composite substrate includes: the piezoelectric device comprises a support substrate, a trap layer, an oxide layer and a piezoelectric material layer which are sequentially stacked; the trap layer is made of insulating polycrystalline compound material.

In some examples, the implementation of step S100 may refer to the embodiment shown in fig. 6b and will not be described herein.

And S200, forming an electrode layer on one side of the piezoelectric material layer, which is away from the supporting substrate.

In some examples, taking the structure of the rf integrated device shown in fig. 11 as an example, step S200 includes: referring to fig. 11, an electrode layer is formed on the bragg reflection layer 30 using a metal material. The electrode layer is patterned to form the desired pattern of the first electrode 21 and the second electrode 23.

Fig. 15 is a flowchart schematically illustrating a method for manufacturing a radio frequency integrated device according to another embodiment of the present application.

Referring to fig. 15, a method for manufacturing a radio frequency integrated device according to an embodiment of the present application may include the following steps:

S100, forming a composite substrate. The composite substrate includes: a support substrate, a trap layer, an oxide layer and a semiconductor material layer which are sequentially stacked; the trap layer is made of insulating polycrystalline compound material.

In some examples, the implementation of step S100 may refer to the embodiment shown in fig. 6a and will not be described herein.

S200, forming a field effect transistor on one side of the oxide layer, which is away from the supporting substrate.

In some examples, the field effect transistor in the embodiments of the present application may be manufactured by a manufacturing method of a field effect transistor in the prior art, which is not described herein.

The embodiment of the application also provides a radio frequency front end module, which comprises one or more radio frequency integrated devices. The performance of the radio frequency integrated device is better, so that the performance of the radio frequency front-end module comprising the radio frequency integrated device is also better. And the principle of the solution of the radio frequency front end module is similar to that of the radio frequency integrated device, so that the implementation of the radio frequency front end module can refer to the implementation of the radio frequency integrated device, and the repetition is omitted.

The embodiment of the application also provides electronic equipment, which comprises the radio frequency front end module. The performance of the radio frequency front end module is better, so that the performance of the electronic equipment comprising the radio frequency front end module is also better. And the principle of the electronic device for solving the problem is similar to that of the radio frequency front end module, so that the implementation of the electronic device can refer to the implementation of the radio frequency front end module, and the repetition is omitted.

It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims

1. A radio frequency integrated device, comprising:

A composite substrate, the composite substrate comprising: a support substrate and a trap layer which are sequentially laminated; the trap layer is made of an insulating polycrystalline compound material;

The functional device is arranged on one side of the trap layer, which is away from the supporting substrate, and an oxide layer is arranged between the functional device and the trap layer;

wherein the functional device is used for transmitting radio frequency signals.

2. The radio frequency integrated device of claim 1, wherein the polycrystalline compound material comprises a polycrystalline nitride material.

3. The radio frequency integrated device of claim 2, wherein the polycrystalline nitride material comprises at least one of AlN and AlScN.

4. A radio frequency integrated device as claimed in any one of claims 1-3, wherein said functional device comprises: at least one acoustic wave resonator.

5. The radio frequency integrated device of claim 4, wherein the acoustic wave resonator comprises: a first piezoelectric thin film structure;

The first piezoelectric film includes: and a first electrode, a piezoelectric material thin film layer, and a second electrode which are laminated on the oxide layer.

6. The radio frequency integrated device of claim 5, wherein the acoustic wave resonator further comprises: and the Bragg reflection layer is arranged between the oxide layer and the first piezoelectric film structure.

7. The radio frequency integrated device according to claim 5 or 6, wherein the oxide layer is disposed in the composite substrate.

8. The radio frequency integrated device of claim 4, wherein the acoustic wave resonator comprises: a second piezoelectric thin film structure;

The second piezoelectric film structure includes: laminating a piezoelectric material thin film layer and an electrode layer provided on the oxide layer;

The electrode layer includes: a plurality of first electrodes and a plurality of second electrodes, the plurality of first electrodes and the plurality of second electrodes are alternately and alternately arranged at intervals.

9. The radio frequency integrated device of claim 8, wherein the acoustic wave resonator further comprises: and a Bragg reflection layer disposed between the oxide layer and the second piezoelectric thin film structure.

10. The radio frequency integrated device according to claim 8 or 9, wherein the oxide layer is disposed in the composite substrate;

or the oxide layer and the piezoelectric material film layer are both arranged in the composite substrate.

11. The radio frequency integrated device of claim 1, wherein the radio frequency integrated device further comprises: a layer of semiconductor material disposed between the oxide layer facing away from the functional devices;

the functional device includes: and the channel layer of the field effect transistor is formed by adopting the semiconductor material layer.

12. The radio frequency integrated device of claim 11, wherein the oxide layer is disposed in the composite substrate;

Or the oxide layer and the semiconductor material layer are both disposed in the composite substrate.

13. A radio frequency front end module, comprising: a radio frequency integrated device comprising any of claims 1-12.

14. An electronic device comprising the radio frequency front end module of claim 13.

15. A composite substrate, wherein the composite substrate is applied to a radio frequency integrated device;

The composite substrate includes: a support substrate and a trap layer which are sequentially laminated; the trap layer is made of an insulating polycrystalline compound material.

16. The composite substrate of claim 15, wherein the polycrystalline compound material comprises a polycrystalline nitride material.

17. The composite substrate of claim 16, wherein the polycrystalline nitride material comprises at least one of AlN and AlScN.

18. The composite substrate of any one of claims 15-17, wherein the composite substrate further comprises: and the oxide layer is arranged on one side of the trap layer, which is away from the supporting substrate.

19. The composite substrate of claim 18, wherein the composite substrate further comprises: the piezoelectric material layer is arranged on one side of the oxide layer, which is away from the supporting substrate;

or the composite substrate further comprises: and the semiconductor material layer is arranged on one side of the oxide layer, which is away from the supporting substrate.

20. A method of fabricating a radio frequency integrated device, comprising:

Forming a composite substrate; the composite substrate includes: a support substrate and a trap layer which are sequentially laminated; the trap layer is made of an insulating polycrystalline compound material;

And forming a functional device and an oxide layer arranged between the functional device and the trap layer on one side of the trap layer away from the supporting substrate.

21. A method of preparing a composite substrate, comprising:

Forming a supporting substrate;

And depositing a trap layer on the supporting substrate, wherein the trap layer is made of an insulating polycrystalline compound material.