CN110676287A - Monolithic integrated radio frequency device, preparation method and integrated circuit system - Google Patents

Abstract

The invention provides a monolithic integrated radio frequency device, a preparation method and an integrated circuit system. The preparation method includes: generating an epitaxial layer on a first substrate; processing the epitaxial layer into at least one electronic device, and placing the electronic device away from the first base layer A passivation layer with at least one through hole is formed on one side of the substrate; a piezoelectric film, a metal electrode and a Bragg reflection layer are formed in sequence on the second substrate, and an electrode interconnection hole passing through the Bragg reflection layer is formed; the Bragg reflection layer and the passivation layer are formed. The chemical layer is bonded and connected, the second substrate is removed, and a top electrode and an electrode contact point are formed on the piezoelectric film, and the top electrode and the electrode contact point are connected to the electronic device through the electrode interconnection hole. The invention can integrate multiple electronic devices of different types on the radio frequency front-end module into the same chip, avoids the problem of requiring additional circuit design, reduces electrical connection loss, reduces assembly complexity, and reduces the size of the radio frequency front-end module and cost.

Description

Monolithic integrated radio frequency device, preparation method and integrated circuit system

technical field

The present invention relates to the technical field of electronic communication devices, in particular to a monolithic integrated radio frequency device, a preparation method and an integrated circuit system.

Background technique

Wireless communication terminals have been successfully and widely deployed around the world. The world produces more than 1 billion wireless communication terminal equipment including mobile phones and smart phones every year, and the number is increasing year by year. With the popularity of 4G/LTE applications and the surge in mobile data traffic, the era of big data is also driving the growth of the wireless communication mobile phone market, which is expected to reach 2 billion units per year in the next few years. Therefore, in order to respond to this huge market and the ever-increasing demands of users, the functions of wireless communication terminals have become more and more multifunctional.

Correspondingly, the multi-functional development of wireless communication terminals puts forward high technical requirements such as miniaturization, high frequency, high performance, low power consumption, and low cost for the radio frequency front-end modules of wireless communication terminals.

In order to meet these technical requirements, the existing RF front-end module adopts the method of assembling multiple discrete chips on a single laminate or PC board, but this method has the disadvantage of requiring additional design of circuits to interconnect different chips on the Together, wiring different chips through wires results in electrical connection losses as well as increased assembly complexity, size and cost of RF front-end modules.

SUMMARY OF THE INVENTION

In order to overcome the deficiencies of the prior art, the present invention proposes a monolithic integrated radio frequency device, a preparation method and an integrated circuit, which can integrate multiple electronic devices of different types on the radio frequency front-end module into the same chip, avoiding the need for additional Design wiring issues, reduce electrical connection losses, reduce assembly complexity, and reduce the size and cost of RF front-end modules.

In order to solve the above problem, a technical solution adopted in the present invention is: a method for preparing a monolithic integrated radio frequency device, the radio frequency device is used for a radio frequency front-end module, and the preparation method includes: S1: generating an epitaxy on a first substrate layer, the epitaxial layer includes a first buffer layer, a second single crystal layer and a third single crystal layer stacked in sequence; S2: Process the epitaxial layer into at least one electronic device, and place the electronic device away from all the electronic devices. A passivation layer with at least one through hole is formed on one side of the first base layer, and the electronic device includes at least one of a power amplifier, a noise amplifier and a switch; S3: sequentially forming a piezoelectric film, a metal electrodes and a Bragg reflection layer, and forming electrode interconnection holes through the Bragg reflection layer; S4: bonding the Bragg reflection layer and the passivation layer to connect the electrode interconnection holes and the through holes Electrically connected, and the second substrate is removed, and a top electrode and an electrode contact point are sequentially formed on the side of the piezoelectric film away from the metal electrode, and the top electrode and the electrode contact point are connected to each other through the electrode interconnection hole. The electronics are connected.

Further, the number of the through holes is three, and the through holes are respectively connected with the source electrode, the drain electrode and the gate electrode of the electronic device.

Further, the number of the electrode interconnection holes is three, the objects penetrated by each electrode interconnection hole are not completely the same, and the through holes are opposite and electrically connected to each other.

Further, the top electrode partially covers the side of the piezoelectric film away from the metal electrode, and is connected to the gate through one of the electrode interconnection holes.

Further, the electrode contact point is disposed in the area where the top electrode is not disposed on the side of the piezoelectric film away from the metal electrode, including a first electrode contact point, a second electrode contact point, and a third electrode contact point, The first electrode contact point and the third electrode contact point are respectively connected to the gate electrode and the drain electrode through the electrode interconnection hole, and the second electrode contact point is connected to the top electrode.

Further, the metal electrode partially covers the piezoelectric film, the Bragg reflection layer covers the metal electrode and the part of the piezoelectric film on the side where the metal electrode is not covered by the metal electrode.

Further, the Bragg reflection layer includes alternately stacked first material layers and second material layers, the number of the first material layers and the second material layers are equal to at least two layers, and the first material layers are at least two layers. Different from the acoustic impedance of the second material layer.

Further, a first passivation layer is further provided on the side of the Bragg reflection layer away from the piezoelectric thin film layer, and the first passivation layer is arranged in the concave area of the Bragg reflection layer. The passivation layer flattens the Bragg reflection layer.

Based on the same inventive concept, the present invention also proposes a monolithically integrated radio frequency device, wherein the radio frequency device is obtained by the above-mentioned preparation method of a monolithically integrated radio frequency device.

Based on the same inventive concept, the present invention further proposes an integrated circuit system, the integrated circuit system includes an amplifier, a duplexer, a filter, and a transceiver switch, and the duplexer and filter are coupled to the amplifier and the transceiver switch. connected, the amplifier includes at least one of a power amplifier and a low noise amplifier, and at least two of the amplifier, a duplexer, a filter and a transceiver switch are provided in the monolithically integrated radio frequency device as described above.

Compared with the prior art, the beneficial effects of the present invention are: the present invention prepares electronic devices such as power amplifiers, noise amplifiers and switches on the first substrate, prepares corresponding filters on the second substrate, and flips the second substrate It is bonded on the first substrate, and the electronic device on the first substrate is bonded and connected with the filter on the second substrate, which can integrate multiple electronic devices of different types on the RF front-end module into the same chip, avoiding It eliminates the problem of requiring additional design lines, reduces electrical connection losses, reduces assembly complexity, and reduces the size and cost of RF front-end modules.

Description of drawings

1 is a flowchart of an embodiment of a method for manufacturing a monolithically integrated radio frequency device of the present invention;

2a is a cross-sectional view of an embodiment of a monolithically integrated radio frequency device in a method for preparing a monolithically integrated radio frequency device of the present invention;

2b is a top view of an embodiment of a monolithically integrated radio frequency device in the method for preparing a monolithically integrated radio frequency device of the present invention;

3 is a structural diagram of an embodiment of generating an epitaxial layer on a first substrate in a method for manufacturing a monolithically integrated radio frequency device according to the present invention;

4 is a structural diagram of an embodiment of an electronic device formed by epitaxial layer processing in the method for preparing a monolithically integrated radio frequency device according to the present invention;

5 is a structural diagram of an embodiment of forming a passivation layer on an electronic device in a method for preparing a monolithically integrated radio frequency device of the present invention;

6 is a structural diagram of an embodiment of forming a through hole on a passivation layer in a method for preparing a monolithically integrated radio frequency device according to the present invention;

7 is a structural diagram of an embodiment of forming a piezoelectric thin film on a second substrate in a method for manufacturing a monolithically integrated radio frequency device according to the present invention;

8 is a structural diagram of an embodiment of forming a metal electrode on a piezoelectric film in a method for preparing a monolithically integrated radio frequency device according to the present invention;

9 is a structural diagram of an embodiment of forming electrode interconnection holes in a method for manufacturing a monolithically integrated radio frequency device according to the present invention;

10 is a structural diagram of an embodiment of bonding a Bragg reflection layer and a passivation layer in a method for preparing a monolithically integrated radio frequency device of the present invention;

11 is a structural diagram of an embodiment of removing the second substrate in the method for manufacturing a monolithically integrated radio frequency device according to the present invention;

12 is a structural diagram of an embodiment of forming a top electrode in a method for manufacturing a monolithically integrated radio frequency device according to the present invention;

13 is a structural diagram of an embodiment of forming an electrode contact point in a method for manufacturing a monolithically integrated radio frequency device of the present invention;

14 is a structural diagram of an embodiment of a radio frequency device formed in a method for manufacturing a monolithically integrated radio frequency device of the present invention;

FIG. 15 is a structural diagram of an embodiment of an integrated circuit system of the present invention.

In the figure: 120, electronic device; 110, filter; 119, electrode contact point; 135, top electrode; 112, piezoelectric film; 113, metal electrode; 114, first material layer; 116, second material layer; 115 117, the second electrode interconnection hole; 118, the first passivation layer; 129, the passivation layer; 124, the third single crystal layer; 123, the second single crystal layer; 122, the first a buffer layer; 130, a through hole; 121, a first substrate; 111, a second substrate; 128, a first chip dicing line; 131, a first metal layer; 125, a source electrode; 126, a gate electrode; 127, a drain electrode ; 140, the second chip cutting line; 141, LNA; 142, PA; 143, duplexer, filter; 144, TX/RX switch.

Detailed ways

The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be noted that, on the premise of no conflict, the embodiments or technical features described below can be combined arbitrarily to form new embodiments. .

Please refer to FIGS. 1-14 , wherein FIG. 1 is a flowchart of an embodiment of a method for manufacturing a monolithically integrated radio frequency device according to the present invention; FIG. 2a is a monolithic integrated radio frequency device one in the method for manufacturing a monolithically integrated radio frequency device of the present invention. A cross-sectional view of an embodiment; Figure 2b is a top view of an embodiment of a monolithically integrated radio frequency device in a method for preparing a monolithically integrated radio frequency device of the present invention; Figure 3 is a first substrate in the method for preparing a monolithically integrated radio frequency device of the present invention A structural diagram of an embodiment of generating an epitaxial layer; FIG. 4 is a structural diagram of an embodiment of an electronic device formed by processing an epitaxial layer in a method for preparing a monolithically integrated radio frequency device of the present invention; FIG. 5 is a monolithic integrated radio frequency device of the present invention. A structural diagram of an embodiment of forming a passivation layer on an electronic device in the preparation method; FIG. 6 is a structural diagram of an embodiment of forming a through hole on the passivation layer in the preparation method of a monolithic integrated radio frequency device of the present invention; FIG. 7 is a A structural diagram of an embodiment of forming a piezoelectric thin film on the second substrate in the method for preparing a monolithically integrated radio frequency device of the present invention; FIG. 8 is a diagram illustrating the formation of a metal electrode on the piezoelectric thin film in the method for preparing a monolithic integrated radio frequency device of the present invention. A structural diagram of an embodiment; FIG. 9 is a structural diagram of an embodiment of forming electrode interconnection holes in a method for preparing a monolithically integrated radio frequency device of the present invention; FIG. A structural diagram of an embodiment of bonding with a passivation layer; FIG. 11 is a structural diagram of an embodiment of removing the second substrate in the method for preparing a monolithically integrated radio frequency device of the present invention; FIG. 12 is a monolithic integrated radio frequency device preparation of the present invention. A structural diagram of an embodiment of forming a top electrode in the method; FIG. 13 is a structural diagram of an embodiment of forming an electrode contact point in a monolithic integrated radio frequency device manufacturing method of the present invention; FIG. 14 is a monolithic integrated radio frequency device manufacturing method of the present invention. A structural diagram of an embodiment of a radio frequency device formed in .

In the drawings of the present invention, for the convenience of drawing, only one FBAR resonator is drawn in the filter part, and only one transistor is drawn for the amplifier and switch. Multiple transistors to form devices such as amplifiers and switches are within the protection scope of the patent of the present invention, and the dotted lines in the accompanying drawings are structures that are blocked. The method for fabricating the monolithically integrated radio frequency device of the present invention will be described in detail with reference to FIGS. 1-14 .

In this embodiment, the monolithic integration of the electronic device 120 for the RF front-end module includes at least one filter 110 and at least one electronic device 120 . The electronic device 120 includes at least one of a power amplifier, a noise amplifier, and a switch. The filter 110 includes a piezoelectric film 112 , a metal electrode 113 , a Bragg reflector, a top electrode 135 , and an electrode contact point 119 . The electrode contact point 119 and the top electrode 135 are arranged on one side of the filter 110 . The electronic device 120 is bonded to the side of the filter 110 where the top electrode 135 is not provided. The metal electrode 113 is arranged on the side of the piezoelectric film 112 close to the electronic device 120 , and the Bragg reflection layer is arranged on the side of the metal electrode 113 away from the piezoelectric film 112 . Electrode interconnection holes penetrating the Bragg reflection layer are provided on the piezoelectric thin film 112 . The filter 110 and the electronic device 120 are electrically connected through electrode interconnection holes. The electronic device 120 includes a third single crystal layer 124 , a second single crystal layer 123 , and a first buffer layer 122 stacked in sequence in a direction away from the filter 110 . A passivation layer 129 is provided on the side, and the passivation layer 129 is bonded and connected to the Bragg reflection layer. The single crystal layer 124 , the second single crystal layer 123 , and the first buffer layer 122 are formed by processing.

In this embodiment, the filter 110 includes at least one of a single crystal or polycrystalline SMR resonator device, and a single crystal or polycrystalline filter device.

In this embodiment, the electronic device 120 includes a power amplifier, a low noise amplifier, a switch, and other devices having similar structures.

In this embodiment, the method for preparing a monolithically integrated radio frequency device of the present invention includes the following steps:

S1: An epitaxial layer is formed on the first substrate, and the epitaxial layer includes a first buffer layer, a second single crystal layer and a third single crystal layer stacked in sequence.

In this embodiment, the first substrate 121 is used as a growth substrate for the epitaxial layer, and the first substrate 121 can be a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, or an AlxGa1-xN buffer layer At least one of the substrates, in other embodiments, may also be other substrates that can be used as epitaxial layer substrates, which are not limited herein.

The first buffer layer 122 covering the first substrate 121 may be made of aluminum nitride, and its thickness is optimal according to time and cost, which is not limited, and any thickness is within the protection scope of the present invention.

In this embodiment, when the formed electronic device 120 has a single crystal structure, the first buffer layer 122 may be a superlattice buffer structure made of single crystal AlN, SiC, AlxGa1-xN and other single crystal semiconductor materials.

The second single crystal layer 123 and the third single crystal layer 124 are composed of two or three materials of GaN, AlN, and AlxGa1-xN to form a multi-layer single crystal structure, wherein 0<x<1 in AlxGa1-xN, the second The thickness of the single crystal layer 123 and the thickness of the third single crystal layer 124 are both between 1 nm and 1500 nm.

In a specific embodiment, the sum of the thicknesses of the second single crystal layer 123 and the third single crystal layer 124 is between 100 nanometers and 2000 nanometers.

S2: Process the epitaxial layer into at least one electronic device, and form a passivation layer with at least one through hole on the side of the electronic device away from the first base layer, where the electronic device includes at least one of a power amplifier, a noise amplifier and a switch.

At least one electronic device 120 is formed by chip-level processing on the first buffer layer 122 , the second single crystal layer 123 and the third single crystal layer 124 forming the epitaxial layers. The drawings are described by taking the processed electronic device 120 as a transistor as an example, wherein the source electrode 125 , the gate electrode 126 , and the drain electrode 127 of the transistor are sequentially arranged on the third single crystal layer 124 .

In this embodiment, a plurality of electronic devices 120 can be formed on the first substrate 121, and a first chip dicing lane 128 is provided between each electronic device 120, and the electronic devices 120 are separated by the first chip dicing lane 128. The electronic device 120 formed on the first substrate 121 can work alone, or can be cascaded to form a power amplifier, a low-noise amplifier, a switch, and other devices required for a radio frequency front-end module.

The passivation layer 129 is formed by deposition on the side away from the first substrate 121 from the electronic device 120. The passivation layer 129 can be made of high dielectric constant materials such as AlN, GaN, SiO2, and the thickness can be 2 nanometers to 3 micrometers. between.

The through holes 130 on the passivation layer 129 are formed by dry or wet etching, and the pore size of the through holes 130 is in the range of tens of nanometers to tens of micrometers, which can be adjusted according to actual needs, which is not limited herein.

In this embodiment, the through hole 130 is provided with a first metal layer 131, the first metal layer 131 is formed by electroplating or evaporation, and the metal forming the first metal layer 131 may be gold, silver, aluminum, etc. with good conductivity Metal, through the first metal layer 131 to electrically connect the through hole 130 to the electronic device 120 to form a lead through hole on the electrode.

In a specific embodiment, the formed electronic device 120 is a transistor, the number of through holes 130 is three, and the source electrode 125 , the gate electrode 126 and the drain electrode 127 of the transistor are electrically connected to one through hole 130 respectively.

S3: forming a piezoelectric thin film, a metal electrode, and a Bragg reflection layer in sequence on the second substrate, and forming an electrode interconnection hole penetrating the Bragg reflection layer.

In this embodiment, the second substrate 111 is at least one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, and an AlxGa1-xN buffer layer substrate. It can be other substrates that can be used as substrates for epitaxial growth of the piezoelectric thin film 112 , which is not limited here.

The piezoelectric thin film 112 includes any one of single crystal AlN, polycrystalline AlN obtained by sputtering, ZnO, and PZT, and its thickness is 0.01 micrometers to 10 micrometers.

The metal electrode 113 is formed on the side of the piezoelectric film 112 away from the second substrate 111 by an electron beam lift-off method or a magnetron sputtering method, partially covering the piezoelectric film 112, wherein the thickness of the metal electrode 113 is between 0.1 nm and 500 nm , the material for forming the metal electrode 113 may be molybdenum, aluminum, ruthenium, tungsten or titanium materials and combinations thereof.

After the metal electrode 113 is formed on the piezoelectric film 112, a Bragg reflection layer is formed on the metal electrode 113 and the piezoelectric film 112. The Bragg reflection layer covers the metal electrode 113 and the side of the piezoelectric film 112 where the metal electrode 113 is provided is not covered by the metal electrode. The part of the Bragg reflection layer covered by 113 includes alternately stacked first material layers 114 and second material layers 116 . The number of the first material layers 114 and the second material layers 116 is the same and both are at least two layers, and the first material layers 114 Different from the acoustic impedance 116 of the second material layer. The difference in acoustic impedance between the first material layer 114 and the second material layer 116 is large, and the specific difference in acoustic impedance between the two can be set according to actual needs, which is not limited herein.

A first passivation layer 118 is also provided on the side of the Bragg reflection layer away from the piezoelectric film 112. The first passivation layer 118 is arranged in the recessed area of the Bragg reflection layer, and the Bragg reflection layer is flattened by the first passivation layer 118 and away from the piezoelectric One side of the film 112 is used for bonding connection with the filter 110 and the electronic device 120 .

In a specific embodiment, the number of electrode interconnection holes is three, the objects penetrating each electrode interconnection hole are not completely the same, and different through holes 130 are opposed to each other and electrically connected. The electrode interconnection holes include two first electrode interconnection holes 115 and one second electrode interconnection hole 117 , and the first electrode interconnection holes 115 and the second electrode interconnection holes 117 are spaced apart from each other. The second electrode interconnection hole 117 is electrically connected to the metal electrode 113 through the Bragg reflection layer, and the first electrode interconnection hole 115 close to the second electrode interconnection hole 117 penetrates the Bragg reflection layer, the metal electrode 113, the piezoelectric film 112, and the other The first electrode interconnection hole 115 penetrates the Bragg reflection layer, the first passivation layer 118 and the piezoelectric thin film 112 .

The filters 110 on the second substrate 111 can work alone, or multiple filters 110 can be cascaded to form filters 110 in any currently applied and unapplied frequency bands.

S4: Bonding and connecting the Bragg reflection layer and the passivation layer, so that the filter and the electronic device are electrically connected through the electrode interconnection holes and through holes, and the second substrate is removed, and a top is formed on the side of the piezoelectric film away from the metal electrode in turn. The electrode and the electrode contact point, the top electrode and the electrode contact point are connected with the electronic device through the electrode interconnection hole.

The passivation layer 129 is bonded to the Bragg reflection layer and the first passivation layer 118 . The bonding method between the passivation layer 129 and the Bragg reflection layer may be any bonding method available in the art, which is not limited herein.

In this embodiment, the method of removing the second substrate 111 may be any one of laser lift-off method, mechanical thinning combined with dry etching and wet etching.

In this embodiment, the top electrode 135 partially covers the side of the piezoelectric film 112 away from the first substrate 121 , and the method for preparing the top electrode 135 includes electron beam evaporation lift-off method, magnetron sputtering metal electrode layer combined with dry etching and wet etching. In any of the etching methods, the thickness of the top electrode 135 is between 10 nanometers and 500 nanometers, and the electrode contact point 119 is provided in the area of the piezoelectric film 112 where the top electrode 135 is not provided.

In this embodiment, the material type of the top electrode 135 may be molybdenum, aluminum, ruthenium, tungsten, or titanium metal materials and combinations thereof, and may also be conductive materials such as graphene.

In a specific embodiment, the electrode contact points 119 include a first electrode contact point, a second electrode contact point, and a third electrode contact point, wherein the first electrode contact point and the third electrode contact point pass through the first electrode contact point. The interconnection holes 115 are respectively connected with the gate electrode 126 and the drain electrode 127 , and the second electrode contact point is connected with the top electrode 135 .

The piezoelectric film 112 , the Bragg reflection layer, the first passivation layer 118 , the metal electrode 113 , the top electrode 135 and the electrode contact point 119 constitute the filter 110 . The filter 110 is connected with the electronic device 120 through the through hole 130 to form a monolithic integrated radio frequency device.

In this embodiment, the formed radio frequency device is a thin film bulk acoustic resonator (FBAR). The thin film bulk acoustic resonator technology is a kind of technology that has emerged in recent years with the improvement of the processing technology level and the rapid development of modern wireless communication technology. RF devices with better performance. It has a very high quality factor Q value (above 1000) and the advantages of being integrated on an IC chip, and is compatible with the Complementary Metal Oxide Semiconductor (CMOS) process, effectively avoiding SAW resonance. The disadvantage of the incompatibility of the CMOS process with the dielectric resonator and the dielectric resonator.

In this embodiment, the monolithic integrated devices on the same first substrate 121 are separated by the second chip dicing lanes 140 .

In a specific embodiment, the Bragg reflection layer on the second substrate 111 and the passivation layer 129 on the first substrate 121 are bonded together. After the second substrate 111 is removed, the source electrodes of the transistors on the first substrate 121 125 is connected to the metal electrode 113 on the piezoelectric film 112 , and the drain 127 of the transistor is connected to an electrode contact point 119 on the piezoelectric film 112 .

Beneficial effects: the present invention prepares electronic devices such as power amplifiers, noise amplifiers and switches on the first substrate, prepares corresponding filters on the second substrate, flip-chips the second substrate to bond the first substrate, and combines The electronic devices on the first substrate are bonded and connected to the filters on the second substrate, which can integrate multiple electronic devices of different types on the RF front-end module into the same chip, avoiding the problem of requiring additional circuit design and reducing the Electrical connection losses, reducing assembly complexity, reducing RF front-end module size and cost.

Based on the same inventive concept, the present invention also proposes a monolithically integrated radio frequency device, wherein the monolithically integrated radio frequency device is obtained by the method for fabricating the monolithic integrated radio frequency device as described in the above-mentioned embodiments. Do repeat.

Based on the same inventive concept, the present invention also proposes an integrated circuit system. Please refer to FIG. 15. FIG. 15 is a schematic structural diagram of an embodiment of the integrated circuit system of the present invention. The integrated circuit system includes an amplifier, a duplexer, and a filter. and a transceiver switch, wherein, in the drawings, the duplexer is placed in the same block and denoted by reference numeral 143, the transceiver switch is denoted by TX/RX switch 144, and the amplifier includes at least one of a power amplifier and a low-noise amplifier. One, the power amplifier is represented by PA142, and the low noise amplifier is represented by LNA141.

In this embodiment, the duplexer and the filter are coupled and connected to the amplifier and the transceiver switch, and at least two of the amplifier, the duplexer, the filter and the transceiver switch are arranged on the monolithically integrated radio frequency device as described above, It will not be described in detail here.

In this embodiment, one end of the power amplifier is connected to the transceiver, the other end is connected to the duplexer and the filter, and the other end of the transceiver switch that is not connected to the duplexer and the filter is connected to the antenna.

In this embodiment, one end of the power amplifier is also connected to the power management system.

In the several embodiments provided by the present invention, it should be understood that the disclosed system, apparatus and method may be implemented in other manners. For example, the device implementations described above are only illustrative. For example, the division of modules or components is only a logical function division. In actual implementation, there may be other divisions. For example, multiple or components may be combined or Can be integrated into another system, or some features can be ignored, or not implemented. On the other hand, the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, devices or indirect coupling or communication connection, which may be in electrical, mechanical or other forms.

The components described as separate components may or may not be physically separated, and components shown as components may or may not be physical, that is, they may be located in one place, or may be distributed on multiple networks. Some or all of them can be selected according to actual needs to achieve the purpose of the solution in this implementation manner.

The above-mentioned embodiments are only preferred embodiments of the present invention, and cannot be used to limit the scope of protection of the present invention. Any insubstantial changes and substitutions made by those skilled in the art on the basis of the present invention belong to the scope of the present invention. Scope of protection claimed.

Claims (10)

1. A method for preparing a monolithically integrated radio frequency device, wherein the radio frequency device is used for a radio frequency front end module, the method comprising:

s1: generating an epitaxial layer on a first substrate, wherein the epitaxial layer comprises a first buffer layer, a second single crystal layer and a third single crystal layer which are sequentially stacked;

s2: processing the epitaxial layer into at least one electronic device, and forming a passivation layer with at least one through hole on one side of the electronic device far away from the first base layer, wherein the electronic device comprises at least one of a power amplifier, a noise amplifier and a switch;

s3: sequentially forming a piezoelectric film, a metal electrode and a Bragg reflection layer on a second substrate, and forming an electrode interconnection hole penetrating through the Bragg reflection layer;

s4: and bonding and connecting the Bragg reflection layer with the passivation layer to electrically connect the electrode interconnection hole and the through hole, removing the second substrate, sequentially forming a top electrode and an electrode contact point on one side of the piezoelectric film, which is far away from the metal electrode, and connecting the top electrode and the electrode contact point with the electronic device through the electrode interconnection hole.

2. The method of claim 1, wherein the number of the through holes is three, and the through holes are respectively connected to a source, a drain, and a gate of the electronic device.

3. The method of claim 2, wherein the number of the electrode interconnection holes is three, and the objects through which each electrode interconnection hole passes are not identical, and are respectively opposite to and electrically connected to different ones of the through holes.

4. The method of claim 3 wherein said top electrode partially covers a side of said piezoelectric film remote from said metal electrodes and is connected to said gate electrode through one of said electrode interconnect holes.

5. The method for manufacturing a monolithically integrated radio frequency device according to claim 3, wherein the electrode contact is disposed in a region of the piezoelectric film away from the metal electrode where the top electrode is not disposed, and includes a first electrode contact, a second electrode contact, and a third electrode contact, wherein the first electrode contact and the third electrode contact are connected to the gate electrode and the drain electrode through the electrode interconnection hole, respectively, and the second electrode contact is connected to the top electrode.

6. The method of claim 1, wherein the metal electrode partially covers the piezoelectric film, the bragg reflector covers the metal electrode, and a portion of the piezoelectric film on a side where the metal electrode is disposed is not covered by the metal electrode.

7. The method of claim 1, wherein the bragg reflector layer comprises a first material layer and a second material layer stacked alternately, the first material layer and the second material layer are at least two layers in the same number, and the acoustic impedance of the first material layer is different from that of the second material layer.

8. The method for fabricating a monolithically integrated rf device as claimed in claim 1, wherein a first passivation layer is further disposed on a side of the bragg reflector layer away from the piezoelectric film, the first passivation layer is disposed in a recessed region of the bragg reflector layer, and the bragg reflector layer is planarized by the first passivation layer.

9. A monolithically integrated radio frequency device, characterized in that said monolithic integration is obtained by a monolithically integrated radio frequency device manufacturing method according to any of claims 1-8.

10. An integrated circuit system, comprising an amplifier, a duplexer, a filter, and a transmit/receive switch, the duplexer, the filter, and the amplifier and the transmit/receive switch coupled together, the amplifier comprising at least one of a power amplifier and a low noise amplifier, at least two of the amplifier, the duplexer, the filter, and the transmit/receive switch being disposed in the monolithically integrated rf device of claim 9.

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