CN118431892B - A semiconductor laser Q-switching circuit and Q-switching method - Google Patents
A semiconductor laser Q-switching circuit and Q-switching method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
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Abstract
The application discloses a Q-switching circuit and a Q-switching method of a semiconductor laser, and belongs to the related technical field of semiconductor lasers. The application provides a Q-switching circuit and a Q-switching method of a semiconductor laser, which adopt key technologies such as a power supply module, a radio frequency field effect transistor, a coupling booster and the like, and realize high-voltage narrow pulse output in the laser Q-switching process by precisely controlling circuit parameters and application of specific devices, thereby improving the adjustment range and adjustment speed of laser performance parameters and enhancing the stability and adjustability of output power. In addition, in order to meet the requirements of different Q-switched crystals, the technology also realizes the variable amplitude of high voltage and the variable rising edge of the high voltage, and can meet the requirements in different application scenes. Meanwhile, the Q-switching plate is smaller in size and higher in stability by means of miniaturization design, electromagnetic symmetry layout and the like, so that the application range and performance of the Q-switching technology of the semiconductor laser are further improved.
Description
Technical Field
The embodiment of the application relates to the related technical field of semiconductor lasers, in particular to a Q-switching circuit and a Q-switching method of a semiconductor laser.
Background
A semiconductor laser is an optoelectronic device that generates laser light based on stimulated radiation of a semiconductor material, which generates laser light by a Q-switched switch by current injection into the semiconductor material. Compared with the traditional gas laser, the semiconductor laser has the advantages of small volume, compact structure, high power density, high conversion efficiency, long service life and the like, and has wide application prospect in the fields of communication, medical treatment, material processing and the like.
However, although semiconductor lasers are excellent in many respects, there are still some limitations to the Q-switching technology. The Q-switching is one of key technologies for controlling the output pulse characteristics of laser, but the Q-switching technology of the traditional semiconductor laser generally has the problems of narrow adjustment range, low adjustment speed, unstable output power and the like. These problems limit the applications of semiconductor lasers in fields where output stability and pulse characteristics are required, such as high-precision laser processing, laser radar, and the like. Therefore, the improvement and innovation of the Q-switching technology of the semiconductor laser has important significance for improving the application performance of the semiconductor laser in the fields.
Disclosure of Invention
The embodiment of the application provides a Q-switching circuit and a Q-switching method of a semiconductor laser, wherein the technical scheme is as follows:
in one aspect, a semiconductor laser Q-switching circuit is provided, the circuit comprising:
the power supply device comprises a power supply module GS1, a driving circuit U1, a radio frequency field effect transistor Q1, a first charging current-limiting power non-inductive resistor R1, a second power non-inductive resistor R2, a third power non-inductive resistor R3, a first high-frequency capacitor C1, a second high-frequency capacitor C2, a coupling booster T1 and a clamping diode D1;
The input end of the power source module GS1 is connected with a direct current input power source end DC, and the output end of the power source module GS1 is connected with one end of the first charging current-limiting power non-inductive resistor R1;
The first high-frequency capacitor C1 and the second high-frequency capacitor C2 are connected in parallel, and a first node and a second node are formed at two parallel ends; the second power non-inductive resistor R2 and the third power non-inductive resistor R3 are connected in parallel, and a third node and a fourth node are formed at two parallel ends;
The first node is connected with the other end of the first charging current-limiting power noninductive resistor R1; the second node is connected with the third node; the fourth node is connected with one side of the coupling booster T1;
the clamping diode D1 and the Q-switching crystal Y1 are respectively connected in parallel to the other side of the coupling booster T1, and the Q-switching crystal Y1 is a device externally connected through a wire;
the first end of the radio frequency field effect tube Q1 is connected with the first node, the second end of the radio frequency field effect tube Q1 is grounded, and the control end of the radio frequency field effect tube Q1 is connected with the signal output end of the driving circuit U1;
The signal input end of the driving circuit U1 is input with a Q-switched pulse signal.
Optionally, the source module GS1 is provided with a ground GND.
Optionally, the coupling booster T1 includes a primary side and a secondary side;
the first end of the primary side is connected with the fourth node, and the second end of the primary side is grounded;
the first end of the secondary side is connected with the negative electrode of the clamping diode D1, and the second end of the secondary side is connected with the positive electrode of the clamping diode D1 and grounded.
Optionally, the rf fet Q1 is an N-type fet;
The source electrode of the rf fet Q1 is used as the second end, the drain electrode of the rf fet Q1 is used as the first end, and the gate electrode of the rf fet Q1 is used as the control end.
Optionally, the on time of the rf fet Q1 is 2NS.
In another aspect, a method for tuning Q of a semiconductor laser is provided, which is applicable to the above-mentioned tuning Q circuit of a semiconductor laser, and includes:
Electrifying the DC input power supply end DC, setting the resistance value of the first charging current-limiting power noninductive resistor, and starting the power supply module in the electrifying state of the DC input power supply end DC;
The power supply module is started to precharge the first high-frequency capacitor and the second high-frequency capacitor;
The Q-switched pulse signal is input to a signal input end of the driving circuit, the radio frequency field effect transistor is rapidly conducted, charges of the first high-frequency capacitor and the second high-frequency capacitor which are precharged are released through the radio frequency field effect transistor, and a primary stage of the coupling booster generates high-voltage narrow pulses;
Amplifying the high-voltage narrow pulse through the secondary side of the coupling booster, generating the amplified high-voltage narrow pulse, applying the amplified high-voltage narrow pulse to the Q-switching crystal, switching Q on, and forming a narrow pulse with huge peak value by laser energy through a Q switch, wherein the Q-switching process is completed.
Optionally, the Q-switched pulse signal is input to a signal input end of the driving circuit, and the rf fet is turned on rapidly, including:
under the action of the Q-switched pulse signal, a signal output end of the driving circuit generates a Q-switched signal with driving capability;
And adding the Q-switching signal to the gate end of the radio frequency field effect tube, wherein the gate end is rapidly conducted under the action of inputting the Q-switching signal.
The application provides a Q-switching circuit and a Q-switching method of a semiconductor laser. The method adopts key technologies such as a power supply module, a radio frequency field effect transistor, a coupling booster and the like, and realizes high-voltage narrow pulse output in the laser Q-switching process by precisely controlling circuit parameters and application of specific devices, thereby improving the adjusting range and adjusting speed of the performance parameters of the laser and enhancing the stability and adjustability of the output power of the laser. In addition, in order to meet the requirements of different Q-switched crystals, the technology also realizes the variable amplitude of high voltage and the variable rising edge of the high voltage, and can meet the requirements in different application scenes. Meanwhile, the Q-switching plate is smaller in size and higher in stability by means of miniaturization design, electromagnetic symmetry layout and the like, so that the application range and performance of the Q-switching technology of the semiconductor laser are further improved.
In summary, the Q-switching technology of the miniaturized wide-range semiconductor laser with high voltage has the advantages of wide adjustment range, high adjustment speed, stable output power and the like, and has important significance for improving the application effect of the semiconductor laser in the fields of communication, laser radar, medical treatment and the like.
Drawings
Fig. 1 is a schematic diagram showing a structure of a Q-switching circuit of a semiconductor laser according to an exemplary embodiment of the present application;
Fig. 2 is a flow chart illustrating a method for tuning Q of a semiconductor laser according to an exemplary embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail with reference to the accompanying drawings.
References herein to "a plurality" means two or more. "and/or", describes an association relationship of an association object, and indicates that there may be three relationships, for example, a and/or B, and may indicate: a exists alone, A and B exist together, and B exists alone. The character "/" generally indicates that the context-dependent object is an "or" relationship.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a Q-switching circuit of a semiconductor laser according to an exemplary embodiment of the present application.
The circuit shown in fig. 1 includes the following structure.
The power supply device comprises a power supply module GS1, a driving circuit U1, a radio frequency field effect transistor Q1, a first charging current-limiting power non-inductive resistor R1, a second power non-inductive resistor R2, a third power non-inductive resistor R3, a first high-frequency capacitor C1, a second high-frequency capacitor C2, a coupling booster T1 and a clamping diode D1.
The connection relationship between the respective structures in the circuit shown in fig. 1 is as follows.
The input end of the source module GS1 is connected to the DC input source end DC, and the output end of the source module GS1 is connected to one end of the first charging current-limiting power non-inductive resistor R1. The power module technology is used for realizing high-voltage output, so that the device has the characteristics of miniaturization and low power consumption.
The first high-frequency capacitor C1 and the second high-frequency capacitor C2 are connected in parallel, and a first node and a second node are formed at two parallel ends; the second power non-inductive resistor R2 and the third power non-inductive resistor R3 are connected in parallel, and the two ends of the parallel connection form a third node and a fourth node.
The first node is connected with the other end of the first charging current-limiting power non-inductive resistor R1; the second node is connected with the third node; the fourth node is connected with one side of the coupling booster T1; the clamping diode D1 and the Q-switching crystal Y1 are respectively connected in parallel to the other side of the coupling booster T1, and it should be noted that the Q-switching crystal Y1 is a device connected externally through a wire and is not a component of the Q-switching circuit of the semiconductor laser.
The first end of the radio frequency field effect tube Q1 is connected with the first node, the second end of the radio frequency field effect tube Q1 is grounded, and the control end of the radio frequency field effect tube Q1 is connected with the signal output end of the driving circuit U1. The RF FET is used to ensure the quick response of the Q-switching process. And the frequency is increased by utilizing the radio frequency magnetic ring so as to ensure the stability of the Q-switching process.
The signal input end of the driving circuit U1 is input with a Q-switched pulse signal, wherein the Q-switched pulse signal is sent out through external equipment.
Further, the source module GS1 is provided with a ground GND.
Further, the coupling booster T1 includes a primary side and a secondary side; the first end of the primary side is connected with a fourth node, and the second end of the primary side is grounded; the first end of the secondary side is connected with the cathode of the clamping diode D1, and the second end of the secondary side is connected with the anode of the clamping diode D1 and grounded.
Further, the rf fet Q1 is an N-type fet. The source electrode of the radio frequency field effect tube Q1 is used as a second end, the drain electrode of the radio frequency field effect tube Q1 is used as a first end, and the grid electrode of the radio frequency field effect tube Q1 is used as a control end.
For the circuit shown in fig. 1, the working mode of the circuit is to precharge the first high-frequency capacitor and the second high-frequency capacitor by adjusting flyback high-voltage output, a Q-switched pulse signal is input to the signal input end of the driving circuit, the radio frequency field effect transistor is rapidly conducted, charges of the first high-frequency capacitor and the second high-frequency capacitor which are precharged are released through the radio frequency field effect transistor, the primary stage of the coupling booster generates high-voltage narrow pulses, the primary stage pulse amplitude of the coupling booster is changed and then is coupled to the secondary stage pulse high-voltage change, the secondary stage pulse high-voltage wide-range change is from 1 kilovolt to 7.5 kilovolts, the pulse width rising edge reaches nanosecond level, the pulse rising edge is variable, and the change range is 25 ns-100 ns, so that the circuit is widely applicable to the full-range high-voltage Q-switching of different crystals of the semiconductor laser. Without limitation, the Q-switched crystals include, but are not limited to, the following, crystal types, BB0, KTP, RTP, KDP, LINBO, etc.
In addition, in order to adapt to the output energy of semiconductor lasers with different Q-switching crystals, the requirements on uniformity and stability of light spots are met, the rising edge range of the high voltage of the pulse of the Q-switching crystals is large, and the amplitude of the high voltage of the Q-switching crystals is wide. To achieve this, the design method parameters of the present circuit are as follows.
In a possible implementation manner, the embodiment of the application adopts a radio frequency field effect transistor, and the conduction time is 2NS, and adopts a radio frequency magnetic ring, and the frequency is up to 400MHz; the primary side power supply high voltage adopts a single-ended flyback switching power supply technology, the size is small, the power consumption is low, the control is convenient, the integration level is high, and the single-ended flyback switching power supply circuit is skillfully integrated on a printed board as a small integrated high-voltage power supply. In addition, the rising edge of the wide range of the Q-switched high voltage is changed by changing the secondary turns, namely the inductance, and the rising edge is changed by improving the amplitude method of the primary single-ended flyback output high voltage, so that the laser output light spots are uniform, and the energy is high and the voltage is stabilized. Furthermore, in order to adapt to the high voltage inequality required by different Q-switched crystals, the flyback regulation type high voltage output is adopted, the discharge pulse high voltage is found to be increased or decreased and then is coupled to the secondary stage through the coupling booster, the secondary stage pulse high voltage amplitude is also changed along with the change, the output Q-switched pulse high voltage can be widely changed, the change range is 1 kilovolt to 7.5 kilovolts, the miniature integrated printed board layout is adopted, the radio frequency field effect transistor and the plurality of noninductive resistors are adopted, the plurality of high frequency capacitors are arranged in an electromagnetic symmetry mode, the parasitic capacitance and inductance of the circuit are greatly reduced, the change of the Q-switched high voltage rising edge is facilitated, and further, the novel Q-switched plate and strip high voltage of the laser is concentrated to 60 x 34.
On the other hand, as shown in fig. 2, fig. 2 shows a flow chart of a method for tuning Q of a semiconductor laser according to an exemplary embodiment of the present application, where the method is applicable to the above-mentioned circuit for tuning Q of a semiconductor laser, and the method includes:
Step 201, the DC input power terminal DC is powered on and the resistance value of the first charging current-limiting power non-inductive resistor is set, and the power module is started in the state that the DC input power terminal DC is powered on.
Step 202, under the start of the power module, the first high-frequency capacitor and the second high-frequency capacitor are precharged.
And 203, inputting a Q-switched pulse signal to a signal input end of the driving circuit, and rapidly conducting the radio frequency field effect transistor, wherein charges of the first high-frequency capacitor and the second high-frequency capacitor which are precharged are released through the radio frequency field effect transistor, and the primary stage of the coupling booster generates high-voltage narrow pulses.
In one possible implementation, step 203 includes the following.
Under the action of the Q-switched pulse signal, the signal output end of the driving circuit generates a Q-switched signal with driving capability;
And secondly, adding the Q-switching signal to the gate end of the radio frequency field effect transistor, and rapidly conducting the radio frequency field effect transistor by the gate end under the action of the input Q-switching signal.
And 204, amplifying the high-voltage narrow pulse through the secondary side of the coupling booster, generating the amplified high-voltage narrow pulse, applying the amplified high-voltage narrow pulse to a Q-switching crystal, switching Q on, and forming a narrow pulse with huge peak value by laser energy through a Q switch, thereby completing the Q-switching process.
In an embodiment, a single-ended flyback switching power supply outputs high voltage to precharge a first high-frequency capacitor and a second high-frequency capacitor in a circuit when a power supply module is started, and a Q-switched pulse signal is input at a signal input end of a driving circuit.
Then, when the radio frequency field effect tube is opened rapidly, charges of the first high-frequency capacitor and the second high-frequency capacitor which are precharged are released through the radio frequency field effect tube, high-voltage narrow pulses generated by the primary stage of the coupling booster are output to the secondary stage through the coupling booster to form amplified high-voltage narrow pulses and are applied to the Q-switching crystal, a laser light path is opened rapidly, laser energy is transmitted out from the output end of the resonant cavity in a single pulse mode, and the Q-switching process is completed.
The application provides a Q-switching circuit and a Q-switching method of a semiconductor laser, which adopt key technologies such as a power supply module, a radio frequency field effect transistor, a coupling booster and the like, and realize high-voltage narrow pulse output in the laser Q-switching process by precisely controlling circuit parameters and application of specific devices, thereby improving the adjustment range and adjustment speed of laser performance parameters and enhancing the stability and adjustability of output power. In addition, in order to meet the requirements of different Q-switched crystals, the technology also realizes the variable amplitude of high voltage and the variable rising edge of the high voltage, and can meet the requirements in different application scenes. Meanwhile, the Q-switching plate is smaller in size and higher in stability by means of miniaturization design, electromagnetic symmetry layout and the like, so that the application range and performance of the Q-switching technology of the semiconductor laser are further improved. Furthermore, the secondary turns are adjusted, the inductance is changed, and the rising edge of the Q-switched high voltage is changed in a wide range; the flyback regulation type high-voltage output is adopted to realize the variable high-voltage amplitude so as to adapt to the requirements of different Q-switched crystals; in the layout design, the electromagnetic symmetry of the circuit is considered so as to reduce parasitic capacitance and inductance and ensure the stability of high-voltage output; the novel Q board is transferred to design laser instrument, and the size is small and exquisite, need not outside high voltage input, adopts the metal box shielding, reduces the interference to other equipment.
In conclusion, the semiconductor laser Q-switching method has the advantages of wide adjusting range, high adjusting speed, stable output power and the like, and has important significance for improving the application effect of the semiconductor laser in the fields of communication, laser radar, medical treatment and the like.
In addition, the application also provides an application scene of the Q-switching circuit and the Q-switching method of the semiconductor laser.
Laser medical device: semiconductor lasers are very widely used in the medical field, for example for skin treatment. By improving the Q-switching technique, the stability and accuracy of the laser in the medical device can be improved, thereby enabling the doctor to operate more accurately and reducing the pain and recovery time of the patient.
Laser radar technology: the laser radar has important application in the fields of aerospace, military and the like. By improving the Q-switching technology of the semiconductor laser, high-energy and narrow-pulse laser can be realized, the ranging precision is improved, and the detection capability is improved.
Scientific research field: semiconductor lasers are also very widely used in the field of scientific research, for example in spectroscopy, biomedical research, and materials science. By improving the Q-switching technology, the performance and the application range of the laser can be improved, so that the requirements of scientific research are better met.
Through the technical scheme, the Q-switching function of the miniaturized wide-range semiconductor laser with high voltage is realized, and the stability and adjustability of laser output are ensured.
Those of ordinary skill in the art will appreciate that all or a portion of the steps for accomplishing the above embodiments may be accomplished by hardware or by designing software program instruction output assist hardware. The foregoing description of the preferred embodiments of the present application is not intended to limit the application, but rather, the application is to be construed as limited to the appended claims.
Claims (7)
1. A semiconductor laser Q-switching circuit, the circuit comprising:
The power supply comprises a power supply module (GS 1), a driving circuit (U1), a radio frequency field effect transistor (Q1), a first charging current-limiting power non-inductive resistor (R1), a second power non-inductive resistor (R2), a third power non-inductive resistor (R3), a first high-frequency capacitor (C1), a second high-frequency capacitor (C2), a coupling booster (T1) and a clamping diode (D1);
The input end of the power supply module (GS 1) is connected with a direct current input power supply end (DC), and the output end of the power supply module (GS 1) is connected with one end of the first charging current-limiting power non-inductive resistor (R1);
The first high-frequency capacitor (C1) and the second high-frequency capacitor (C2) are connected in parallel, and a first node and a second node are formed at two parallel ends; the second power non-inductive resistor (R2) and the third power non-inductive resistor (R3) are connected in parallel, and a third node and a fourth node are formed at two parallel ends;
The first node is connected with the other end of the first charging current-limiting power non-inductive resistor (R1); the second node is connected with the third node; the fourth node is connected with one side of the coupling booster (T1);
the clamping diode (D1) and the Q-switching crystal (Y1) are respectively connected in parallel to the other side of the coupling booster (T1), and the Q-switching crystal (Y1) is a device externally connected through a wire;
The first end of the radio frequency field effect tube (Q1) is connected with the first node, the second end of the radio frequency field effect tube (Q1) is grounded, and the control end of the radio frequency field effect tube (Q1) is connected with the signal output end of the driving circuit (U1);
a Q-switched pulse signal is input to a signal input end of the driving circuit (U1).
2. The semiconductor laser Q-switching circuit according to claim 1, characterized in that the source module (GS 1) is provided with a Ground (GND).
3. The semiconductor laser Q-switching circuit according to claim 1, wherein the coupling booster (T1) comprises a primary side and a secondary side;
the first end of the primary side is connected with the fourth node, and the second end of the primary side is grounded;
The first end of the secondary side is connected with the negative electrode of the clamping diode (D1), and the second end of the secondary side is connected with the positive electrode of the clamping diode (D1) and grounded.
4. The semiconductor laser Q-switching circuit according to claim 1, wherein the radio frequency field effect transistor (Q1) is an N-type field effect transistor;
The source electrode of the radio frequency field effect tube (Q1) is used as the second end, the drain electrode of the radio frequency field effect tube (Q1) is used as the first end, and the grid electrode of the radio frequency field effect tube (Q1) is used as the control end.
5. The semiconductor laser Q-switching circuit according to claim 1, wherein the on-time of the rf fet (Q1) is 2NS.
6. A method of tuning Q of a semiconductor laser, the method being applicable to the semiconductor laser Q tuning circuit of any one of claims 1 to 5, the method comprising:
Electrifying the direct current input power supply end (DC) and setting the resistance value of the first charging current-limiting power noninductive resistor, and starting the power supply module in the electrifying state of the direct current input power supply end (DC);
The power supply module is started to precharge the first high-frequency capacitor and the second high-frequency capacitor;
The Q-switched pulse signal is input to a signal input end of the driving circuit, the radio frequency field effect transistor is rapidly conducted, charges of the first high-frequency capacitor and the second high-frequency capacitor which are precharged are released through the radio frequency field effect transistor, and a primary stage of the coupling booster generates high-voltage narrow pulses;
Amplifying the high-voltage narrow pulse through the secondary side of the coupling booster, generating the amplified high-voltage narrow pulse, applying the amplified high-voltage narrow pulse to the Q-switching crystal, switching Q on, and forming a narrow pulse with huge peak value by laser energy through a Q switch, wherein the Q-switching process is completed.
7. The method of claim 6, wherein the Q-switching pulse signal is input to the signal input terminal of the driving circuit, and the rf fet is turned on rapidly, comprising:
under the action of the Q-switched pulse signal, a signal output end of the driving circuit generates a Q-switched signal with driving capability;
And adding the Q-switching signal to the gate end of the radio frequency field effect tube, wherein the gate end is rapidly conducted under the action of inputting the Q-switching signal.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602865A (en) * | 2016-12-26 | 2017-04-26 | 中国电子科技集团公司第十研究所 | Energy storage capacitor charging circuit and pulse laser power supply |
| CN107959334A (en) * | 2017-12-15 | 2018-04-24 | 重庆唐古拉科技有限公司 | Novel radio charging system |
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| CN1263381A (en) * | 1999-02-11 | 2000-08-16 | 中国科学院化学研究所 | Avalanche electroimpulse generator |
| US20140241387A1 (en) * | 2013-02-22 | 2014-08-28 | Raytheon Company | Multiple-current-source laser diode driver system |
| CN203840066U (en) * | 2014-04-01 | 2014-09-17 | 上海汽车集团股份有限公司 | Energy emitter, receiver and magnetic resonance wireless charging device employing energy emitter and receiver |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106602865A (en) * | 2016-12-26 | 2017-04-26 | 中国电子科技集团公司第十研究所 | Energy storage capacitor charging circuit and pulse laser power supply |
| CN107959334A (en) * | 2017-12-15 | 2018-04-24 | 重庆唐古拉科技有限公司 | Novel radio charging system |
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