CN118398568B - High-durability silicon carbide power device - Google Patents
High-durability silicon carbide power device Download PDFInfo
- Publication number
- CN118398568B CN118398568B CN202410844620.7A CN202410844620A CN118398568B CN 118398568 B CN118398568 B CN 118398568B CN 202410844620 A CN202410844620 A CN 202410844620A CN 118398568 B CN118398568 B CN 118398568B
- Authority
- CN
- China
- Prior art keywords
- aluminum sheet
- power device
- silicon carbide
- shell
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
技术领域Technical Field
本发明涉及功率器件技术领域，具体而言，涉及一种高耐用性碳化硅功率器件。The present invention relates to the technical field of power devices, and in particular to a high-durability silicon carbide power device.
背景技术Background Art
功率芯片通过封装实现与外部电路的连接，其性能的发挥则依赖着封装的支持，在大功率场合下通常功率芯片会被封装为功率模块进行使用。Power chips are connected to external circuits through packaging, and their performance depends on the support of the packaging. In high-power situations, power chips are usually packaged as power modules for use.
在封装过程中，芯片电极端子与绝缘衬板间一般通过引线键合技术进行电气连接，通过键合线使芯片间构成互连，形成回路。During the packaging process, the chip electrode terminals and the insulating liner are generally electrically connected through wire bonding technology, and the chips are interconnected through bonding wires to form a loop.
目前常用的键合线通常采用铝线或者铜线，但在长时间的功率循环过程中，会积累热量并产生热应力。很容易使键合引线断裂或键合接触表面脱落，降低了功率器件的耐用和可靠性，为此目前的解决方式多采用铝带或者铜带，铝带和铜带横截面积大，不仅提高了整体的通流能力，而且也提高了散热效果，但在封装过程中，键合线会弯曲一定角度，而铝带和铜带弯曲角度过大时，容易产生裂纹影响可靠性，因此铝线和铜线或者是铝带或铜带均存在一定的缺陷，Currently, commonly used bonding wires are usually made of aluminum wire or copper wire, but during long-term power cycles, heat will accumulate and thermal stress will be generated. It is easy to cause the bonding wire to break or the bonding contact surface to fall off, reducing the durability and reliability of the power device. For this reason, the current solution is to use aluminum strips or copper strips. Aluminum strips and copper strips have large cross-sectional areas, which not only improve the overall flow capacity, but also improve the heat dissipation effect. However, during the packaging process, the bonding wire will bend at a certain angle. When the bending angle of aluminum strips and copper strips is too large, cracks are likely to occur, affecting reliability. Therefore, aluminum wires and copper wires or aluminum strips or copper strips have certain defects.
同时由于功率器件上的引脚具有一定长度，且暴露在外，在安装和运输时，容易出现折断，影响整体的耐用性，为此现有技术（CN117727708A）公开了一种碳化硅功率器件及其加工方法，通过设置的引脚、收纳座、保护罩、转杆、扭簧、固定槽、第一磁铁、拉杆、磁块和限位板，扭簧的扭转力能够使保护罩旋转套设至引脚的外部，能够对引脚起到保护的作用，At the same time, since the pins on the power device have a certain length and are exposed to the outside, they are prone to breakage during installation and transportation, affecting the overall durability. For this reason, the prior art (CN117727708A) discloses a silicon carbide power device and a processing method thereof. Through the provided pins, storage seat, protective cover, rotating rod, torsion spring, fixing groove, first magnet, pull rod, magnetic block and limit plate, the torsional force of the torsion spring can make the protective cover rotate and sleeve to the outside of the pin, which can protect the pin.
上述现有技术通过保护罩对引脚进行保护，但引脚依然处于外部，当外界作用力较小时，保护罩可以起到保护作用，当外力较大时，引脚依然存在弯折的可能性，从而没有在根本上解决问题，The above-mentioned prior art protects the pins by means of a protective cover, but the pins are still outside. When the external force is small, the protective cover can play a protective role. When the external force is large, the pins are still likely to bend, thus failing to fundamentally solve the problem.
综上所述，目前的现有技术还存在缺陷，需要对其进行改进。In summary, the current prior art still has defects and needs to be improved.
发明内容Summary of the invention
本发明旨在至少解决现有技术或相关技术中存在的技术问题之一。The present invention aims to solve at least one of the technical problems existing in the prior art or related art.
因此，本发明的目的在于提供了一种高耐用性碳化硅功率器件，包括衬板，和位于衬板表层金属片上的SIC功率芯片，以及用于封装衬板的上壳体和下壳体，所述SIC功率芯片通过焊料连接有第一铝片，所述衬板表层金属片通过焊料连接有第二铝片和金属立柱，Therefore, the object of the present invention is to provide a high-durability silicon carbide power device, comprising a liner, and a SIC power chip located on a metal sheet on the surface of the liner, and an upper shell and a lower shell for packaging the liner, wherein the SIC power chip is connected to a first aluminum sheet by solder, and the metal sheet on the surface of the liner is connected to a second aluminum sheet and a metal column by solder.
所述上壳体内壁上一体成型有上隔板和密封板，所述上壳体内壁、上隔板和密封板之间围合形成有上冷却腔，An upper partition plate and a sealing plate are integrally formed on the inner wall of the upper shell, and an upper cooling cavity is formed between the inner wall of the upper shell, the upper partition plate and the sealing plate.
所述下壳体内壁上一体成型有下隔板，所述下隔板将下壳体内部分隔为下冷却腔和散热腔，A lower partition is integrally formed on the inner wall of the lower shell, and the lower partition divides the interior of the lower shell into a lower cooling chamber and a heat dissipation chamber.
所述上壳体和下壳体合并后，所述上冷却腔和下冷却腔相连通，所述上冷却腔和下冷却腔注入有冷却介质，After the upper shell and the lower shell are combined, the upper cooling cavity and the lower cooling cavity are connected, and the upper cooling cavity and the lower cooling cavity are injected with cooling medium.
所述上隔板开设有多个用于放置连接条的通槽，所述连接条用于连接第一铝片和第二铝片，所述连接条表面焊接有第一散热片，所述第一散热片位于上冷却腔内；The upper partition plate is provided with a plurality of through slots for placing connecting strips, the connecting strips are used to connect the first aluminum sheet and the second aluminum sheet, a first heat sink is welded on the surface of the connecting strip, and the first heat sink is located in the upper cooling cavity;
所述下壳体顶面开设有用于放置导热板的通槽，所述导热板与衬板底层金属片通过焊料固定，所述导热板底面焊接有第二散热片，所述第二散热片位于下冷却腔内；The top surface of the lower shell is provided with a through groove for placing a heat conducting plate, the heat conducting plate is fixed to the bottom metal sheet of the lining plate by solder, a second heat sink is welded to the bottom surface of the heat conducting plate, and the second heat sink is located in the lower cooling cavity;
所述上隔板上活动连接有与金属立柱对接的引脚，The upper partition is movably connected with a pin that docks with the metal column.
所述下隔板上设置有半导体制冷片。The lower partition is provided with a semiconductor refrigeration sheet.
作为优选的技术方案：As the preferred technical solution:
如上所述的一种高耐用性碳化硅功率器件，所述下壳体表面一体成型有多个连通管，所述连通管和下壳体相连通，所述上隔板上开设有与连通管相适配的第一通孔，According to the high-durability silicon carbide power device described above, a plurality of connecting tubes are integrally formed on the surface of the lower shell, the connecting tubes are connected to the lower shell, and a first through hole adapted to the connecting tube is opened on the upper partition.
所述连通管外壁向外凸出形成有密封凸缘，所述密封凸缘表面通过密封圈与上隔板密封贴合。The outer wall of the connecting pipe protrudes outward to form a sealing flange, and the surface of the sealing flange is sealed and fitted with the upper partition through a sealing ring.
通过上述技术方案，当上壳体和下壳体固定后，连通管顶端刚好可以伸入至第一通孔，这样上冷却腔和下冷却腔通过连通管可以连通为一体，从而使得冷却介质可以布满上冷却腔和下冷却腔，同时为了避免冷却介质从第一通孔内泄漏，密封凸缘通过与上隔板密封贴合，可以实现密封。Through the above technical solution, when the upper shell and the lower shell are fixed, the top end of the connecting tube can just extend into the first through hole, so that the upper cooling chamber and the lower cooling chamber can be connected as a whole through the connecting tube, so that the cooling medium can fill the upper cooling chamber and the lower cooling chamber. At the same time, in order to avoid leakage of the cooling medium from the first through hole, the sealing flange can achieve sealing by sealingly fitting with the upper partition.
如上所述的一种高耐用性碳化硅功率器件，所述连接条为铝材质，所述连接条与上隔板上的通槽通过密封胶固定粘接，所述连接条表面凸出于上隔板表面。In the high-durability silicon carbide power device as described above, the connecting strip is made of aluminum, the connecting strip is fixedly bonded to the through groove on the upper partition by a sealant, and the surface of the connecting strip protrudes from the surface of the upper partition.
通过上述技术方案，连接条的材质设计，使得连接条、第一铝片和第二铝片可以形成铝带键合，不仅提高了整体的通流能力，而且表面积大，散热效果好。Through the above technical solution, the material design of the connecting strip allows the connecting strip, the first aluminum sheet and the second aluminum sheet to form an aluminum ribbon bond, which not only improves the overall flow capacity but also has a large surface area and good heat dissipation effect.
如上所述的一种高耐用性碳化硅功率器件，所述连接条两端一体成型有“Z”型的弹性连接片，所述连接条两端的弹性连接片分别与第一铝片和第二铝片相抵合，所述第一铝片和第二铝片为水平状布置。In the high-durability silicon carbide power device as described above, a "Z"-shaped elastic connecting piece is integrally formed at both ends of the connecting strip, and the elastic connecting pieces at both ends of the connecting strip are respectively abutted against the first aluminum sheet and the second aluminum sheet, and the first aluminum sheet and the second aluminum sheet are arranged horizontally.
通过上述技术方案，弹性连接片的形状设计，使其具有一定的弹性，进而当上壳体和下壳体固定后，连接条通过弹性连接片可以与第一铝片和第二铝片贴合，并且弹性连接片可以处于压缩状，弹性连接片通过自身的弹性势能可以与第一铝片或第二铝片紧密贴合，从而可以保证了设备整体的可靠和稳定性。Through the above technical solution, the shape design of the elastic connecting piece makes it have a certain elasticity. When the upper shell and the lower shell are fixed, the connecting strip can fit with the first aluminum sheet and the second aluminum sheet through the elastic connecting piece, and the elastic connecting piece can be in a compressed state. The elastic connecting piece can fit tightly with the first aluminum sheet or the second aluminum sheet through its own elastic potential energy, thereby ensuring the overall reliability and stability of the equipment.
如上所述的一种高耐用性碳化硅功率器件，所述下隔板上开设有矩形装配槽，所述半导体制冷片位于装配槽内并通过密封胶固定，所述半导体制冷片的冷端位于下冷却腔内，所述半导体制冷片的热端位于散热腔内。As described above, a high-durability silicon carbide power device is provided with a rectangular assembly groove on the lower partition plate, the semiconductor cooling plate is located in the assembly groove and fixed by a sealant, the cold end of the semiconductor cooling plate is located in the lower cooling cavity, and the hot end of the semiconductor cooling plate is located in the heat dissipation cavity.
通过上述技术方案，上冷却腔和下冷却腔内的冷却介质可以吸收第一散热片和第二散热片上的热量，这样冷却介质自身温度会上升，为了保证了冷却介质的散热效果，通过半导体制冷片的冷端来对冷却介质进行制冷，并且通过半导体制冷片的设置，就无需设置泵体来带动冷却介质循环流动及冷却，从而可以简化设备。Through the above technical scheme, the cooling medium in the upper cooling chamber and the lower cooling chamber can absorb the heat from the first heat sink and the second heat sink, so that the temperature of the cooling medium itself will rise. In order to ensure the heat dissipation effect of the cooling medium, the cooling medium is cooled by the cold end of the semiconductor refrigeration plate. Moreover, through the setting of the semiconductor refrigeration plate, there is no need to set up a pump body to drive the circulation and cooling of the cooling medium, thereby simplifying the equipment.
如上所述的一种高耐用性碳化硅功率器件，所述上隔板上开设有与金属立柱相对应的第二通孔，所述第二通孔内设置有导电柱，所述导电柱底端外壁向外凸出形成有限位凸缘，所述导电柱底端与金属立柱顶端相贴合。In a high-durability silicon carbide power device as described above, a second through hole corresponding to the metal column is opened on the upper partition, a conductive column is arranged in the second through hole, the outer wall of the bottom end of the conductive column protrudes outward to form a limited position flange, and the bottom end of the conductive column is in contact with the top end of the metal column.
所述导电柱的顶端与引脚一端焊接固定，所述引脚与上隔板表面贴合，所述限位凸缘与上隔板底面贴合。The top end of the conductive column is welded and fixed to one end of the pin, the pin is fitted to the surface of the upper partition, and the limiting flange is fitted to the bottom surface of the upper partition.
通过上述技术方案，引脚通过导电柱与金属立柱间接的接触，并且导电柱在第二通孔内可自由旋转，进而使得引脚同样可以自由转动，通过将引脚旋入至上壳体内，这样无需设置其他部件就可以对引脚进行保护。Through the above technical solution, the pin is indirectly in contact with the metal column through the conductive column, and the conductive column can rotate freely in the second through hole, so that the pin can also rotate freely. By screwing the pin into the upper shell, the pin can be protected without setting up other components.
如上所述的一种高耐用性碳化硅功率器件，所述上隔板上第二通孔与密封板的距离各不相同，两个所述引脚长度各不相同。In the high-durability silicon carbide power device as described above, the distances between the second through holes on the upper partition and the sealing plate are different, and the lengths of the two pins are different.
通过上述技术方案，第二通孔的位置分布，使得当将引脚旋入至上壳体内时，可以避免两个引脚发生碰撞和挤压，确保引脚可以正常地旋入和旋出，结构合理。Through the above technical solution, the position distribution of the second through holes can avoid collision and squeezing of the two pins when the pins are screwed into the upper shell, ensuring that the pins can be screwed in and out normally, and the structure is reasonable.
如上所述的一种高耐用性碳化硅功率器件，所述上壳体一侧开设有用于引脚旋出的开口槽，所述上壳体顶部壁体贯穿有与其螺纹连接的限位柱，As described above, a high-durability silicon carbide power device, one side of the upper shell is provided with an opening groove for screwing out the pin, and the top wall of the upper shell is penetrated by a limiting column threadedly connected thereto.
所述限位柱与第二通孔个数相同并一一对齐，所述限位柱底端与引脚表面相抵合。The number of the limiting posts is the same as that of the second through holes and they are aligned one by one, and the bottom end of the limiting post is in contact with the surface of the pin.
通过上述技术方案，当引脚旋出后并与外界设备对接后，可以通过拧动限位柱与引脚抵合，可以使得引脚保持住固定状态，以此来保证了设备运行可靠和稳定性。Through the above technical solution, when the pin is screwed out and docked with the external device, the pin can be kept in a fixed state by twisting the limit column to engage with the pin, thereby ensuring the reliable and stable operation of the equipment.
如上所述的一种高耐用性碳化硅功率器件，所述下冷却腔一侧的下壳体壁体开设有注液孔，所述散热腔两侧的下壳体壁体开设有散热孔。In the high-durability silicon carbide power device as described above, a liquid injection hole is provided on the lower shell wall on one side of the lower cooling cavity, and heat dissipation holes are provided on the lower shell wall on both sides of the heat dissipation cavity.
通过上述技术方案，当上冷却腔和下冷却腔连通后，可以通过注液孔注入冷却介质，进而冷却介质可以布满上冷却腔和下冷却腔，当注入完成后，可以通过塞子将注液孔密封住即可。Through the above technical solution, when the upper cooling cavity and the lower cooling cavity are connected, the cooling medium can be injected through the injection hole, and then the cooling medium can fill the upper cooling cavity and the lower cooling cavity. After the injection is completed, the injection hole can be sealed by a plug.
相对于现有技术，本发明至少具有以下有益效果：Compared with the prior art, the present invention has at least the following beneficial effects:
（1）本发明通过设置有第一铝片、第二铝片和连接条，三者共同组成铝带键合，并且连接条通过第一散热片可以将热量传导至冷却介质中，进而可以避免因温度升高而积累热应力，从而防止第一铝片和第二铝片发生脱落，提高了整体的可靠性和耐用性。(1) The present invention is provided with a first aluminum sheet, a second aluminum sheet and a connecting strip, which together form an aluminum strip bonding, and the connecting strip can conduct heat to the cooling medium through the first heat sink, thereby avoiding the accumulation of thermal stress due to temperature increase, thereby preventing the first aluminum sheet and the second aluminum sheet from falling off, and improving the overall reliability and durability.
（2）本发明由于组成铝带键合，这样即提高了整体的通流能力，而且第一铝片、第二铝片与连接条为分体式结构，在封装过程中，无需进行弯折，简化了安装流程，也保证了铝带键合的可靠性。(2) The present invention improves the overall flow capacity by forming an aluminum ribbon bond. In addition, the first aluminum sheet, the second aluminum sheet and the connecting strip are split structures. During the packaging process, no bending is required, which simplifies the installation process and ensures the reliability of the aluminum ribbon bonding.
（3）本发明通过设置有金属立柱和导电柱，引脚通过导电柱与金属立柱间接接触，这样使得引脚通过导电柱可以进行角度的旋转，从而可以将引脚旋入至壳体内，避免在外力作用下发生断裂，提高了整体的使用寿命。(3) The present invention is provided with a metal column and a conductive column, and the pin is indirectly in contact with the metal column through the conductive column, so that the pin can be rotated at an angle through the conductive column, so that the pin can be screwed into the shell, avoiding breakage under the action of external force, thereby improving the overall service life.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中The above and/or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which
图1为本发明的正视纵剖图；Fig. 1 is a front longitudinal sectional view of the present invention;
图2为本发明的侧视图；Fig. 2 is a side view of the present invention;
图3为本发明的上隔板俯视图；FIG3 is a top view of an upper partition of the present invention;
图4为本发明的下壳体俯视图；FIG4 is a top view of the lower housing of the present invention;
图5为本发明的图1中A点放大图；FIG5 is an enlarged view of point A in FIG1 of the present invention;
图6为本发明的引脚和导电柱立体图。FIG. 6 is a three-dimensional diagram of the pins and conductive posts of the present invention.
图中：1、上壳体；2、下壳体；3、上隔板；4、下隔板；5、上冷却腔；6、下冷却腔；7、散热腔；8、衬板；9、SIC功率芯片；10、第一铝片；11、第二铝片；12、连接条；13、弹性连接片；14、连通管；15、第一通孔；16、密封凸缘；17、第一散热片；18、导热板；19、第二散热片；20、半导体制冷片；21、金属立柱；22、第二通孔；23、引脚；24、导电柱；25、限位凸缘；26、限位柱；27、开口槽；28、密封板。In the figure: 1. upper shell; 2. lower shell; 3. upper partition; 4. lower partition; 5. upper cooling cavity; 6. lower cooling cavity; 7. heat dissipation cavity; 8. lining plate; 9. SIC power chip; 10. first aluminum sheet; 11. second aluminum sheet; 12. connecting strip; 13. elastic connecting sheet; 14. connecting pipe; 15. first through hole; 16. sealing flange; 17. first heat sink; 18. heat conducting plate; 19. second heat sink; 20. semiconductor refrigeration sheet; 21. metal column; 22. second through hole; 23. pin; 24. conductive column; 25. limiting flange; 26. limiting column; 27. opening groove; 28. sealing plate.
具体实施方式DETAILED DESCRIPTION
为了能够更清楚的理解本发明的上述目的、特征和优点，下面结合附图和具体实施方式对本发明进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是，本发明还可以采用其他不同于在此描述的其他方式来实施，因此，本发明的保护范围并不受下面公开的具体实施例的限制。In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.
请参阅图1-6，本发明提供一种技术方案：一种高耐用性碳化硅功率器件，包括衬板8，和位于衬板8表层金属片上的SIC功率芯片9，以及用于封装衬板8的上壳体1和下壳体2。Please refer to Figures 1-6. The present invention provides a technical solution: a high-durability silicon carbide power device, including a liner 8, a SIC power chip 9 located on a surface metal sheet of the liner 8, and an upper shell 1 and a lower shell 2 for encapsulating the liner 8.
如图1和图3所示，SIC功率芯片9通过焊料连接有第一铝片10，衬板8表层金属片通过焊料连接有第二铝片11。As shown in FIG. 1 and FIG. 3 , the SIC power chip 9 is connected to the first aluminum sheet 10 through solder, and the surface metal sheet of the liner 8 is connected to the second aluminum sheet 11 through solder.
上壳体1内壁上一体成型有上隔板3和密封板28，上壳体1内壁、上隔板3和密封板28之间围合形成有上冷却腔5。An upper partition plate 3 and a sealing plate 28 are integrally formed on the inner wall of the upper shell 1 , and an upper cooling chamber 5 is enclosed between the inner wall of the upper shell 1 , the upper partition plate 3 and the sealing plate 28 .
上隔板3开设有多个用于放置连接条12的通槽，连接条12用于连接第一铝片10和第二铝片11，连接条12表面焊接有第一散热片17，第一散热片17位于上冷却腔5内。The upper partition plate 3 is provided with a plurality of through grooves for placing connecting strips 12 . The connecting strips 12 are used to connect the first aluminum sheet 10 and the second aluminum sheet 11 . A first heat sink 17 is welded on the surface of the connecting strip 12 . The first heat sink 17 is located in the upper cooling cavity 5 .
连接条12为铝材质，连接条12与上隔板3上的通槽通过密封胶固定粘接，连接条12表面凸出于上隔板3表面。The connecting strip 12 is made of aluminum. The connecting strip 12 is fixedly bonded to the through groove on the upper partition plate 3 by means of a sealant. The surface of the connecting strip 12 protrudes from the surface of the upper partition plate 3 .
当通过上壳体1和下壳体2对衬板8和SIC功率芯片9进行封装后，连接条12会将第一铝片10和第二铝片11连通，连接条12、第一铝片10和第二铝片11形成铝带键合，SIC功率芯片9在运行时产生的热量，部分会传递给第一铝片10和第二铝片11，由于上冷却腔5内注入有冷却介质，进而第一铝片10和第二铝片11上的热量通过连接条12和第一散热片17可以传递给冷却介质，这样冷却介质配合第一散热片17可以对第一铝片10和第二铝片11进行散热，避免第一铝片10和第二铝片11因热应力而发生脱落，提高了整体的使用可靠性和耐用性。After the liner 8 and the SIC power chip 9 are packaged by the upper shell 1 and the lower shell 2, the connecting strip 12 will connect the first aluminum sheet 10 and the second aluminum sheet 11, and the connecting strip 12, the first aluminum sheet 10 and the second aluminum sheet 11 form an aluminum ribbon bond. The heat generated by the SIC power chip 9 during operation will be partially transferred to the first aluminum sheet 10 and the second aluminum sheet 11. Since the upper cooling cavity 5 is injected with a cooling medium, the heat on the first aluminum sheet 10 and the second aluminum sheet 11 can be transferred to the cooling medium through the connecting strip 12 and the first heat sink 17. In this way, the cooling medium can cooperate with the first heat sink 17 to dissipate the heat of the first aluminum sheet 10 and the second aluminum sheet 11, so as to prevent the first aluminum sheet 10 and the second aluminum sheet 11 from falling off due to thermal stress, thereby improving the overall reliability and durability.
连接条12表面凸出设计，可以确保连接条12可以与第一散热片17充分接触，提高了热传导效果，有利于整体的散热性能。The protruding design of the surface of the connecting strip 12 can ensure that the connecting strip 12 can fully contact with the first heat sink 17, thereby improving the heat conduction effect and being beneficial to the overall heat dissipation performance.
如图1和图4所示，下壳体2内壁上一体成型有下隔板4，下隔板4将下壳体2内部分隔为下冷却腔6和散热腔7，下壳体2顶面开设有用于放置导热板18的通槽，导热板18与衬板8底层金属片通过焊料固定，导热板18底面焊接有第二散热片19，第二散热片19位于下冷却腔6内。As shown in Figures 1 and 4, a lower partition 4 is integrally formed on the inner wall of the lower shell 2, and the lower partition 4 divides the interior of the lower shell 2 into a lower cooling chamber 6 and a heat dissipation chamber 7. A through groove for placing a heat conducting plate 18 is opened on the top surface of the lower shell 2. The heat conducting plate 18 and the bottom metal sheet of the lining plate 8 are fixed by solder. A second heat sink 19 is welded to the bottom surface of the heat conducting plate 18, and the second heat sink 19 is located in the lower cooling chamber 6.
SIC功率芯片9在运行时产生的热量，部分会通过衬板8传递给导热板18，导热板18在将热量传导至第二散热片19上，由于下冷却腔6注入有冷却介质，从而第二散热片19上的热量可以传导至冷却介质中，这样冷却介质配合第二散热片19可以对SIC功率芯片9进行散热降温。Part of the heat generated by the SIC power chip 9 during operation will be transferred to the heat conducting plate 18 through the lining plate 8. The heat conducting plate 18 conducts the heat to the second heat sink 19. Since the lower cooling cavity 6 is injected with cooling medium, the heat on the second heat sink 19 can be conducted to the cooling medium. In this way, the cooling medium and the second heat sink 19 can dissipate heat and cool the SIC power chip 9.
如图1、图3和图4所示，下壳体2表面一体成型有多个连通管14，连通管14和下壳体2相连通，上隔板3上开设有与连通管14相适配的第一通孔15，连通管14外壁向外凸出形成有密封凸缘16，密封凸缘16表面通过密封圈与上隔板3密封贴合。As shown in Figures 1, 3 and 4, a plurality of connecting tubes 14 are integrally formed on the surface of the lower shell 2, the connecting tubes 14 are connected to the lower shell 2, a first through hole 15 adapted to the connecting tube 14 is opened on the upper partition 3, and a sealing flange 16 is formed on the outer wall of the connecting tube 14 protruding outward, and the surface of the sealing flange 16 is sealed to the upper partition 3 through a sealing ring.
下冷却腔6一侧的下壳体2壁体开设有注液孔，上壳体1和下壳体2合并后，上冷却腔5和下冷却腔6相连通，上冷却腔5和下冷却腔6注入有冷却介质。A liquid injection hole is provided in the wall of the lower shell 2 on one side of the lower cooling chamber 6. After the upper shell 1 and the lower shell 2 are combined, the upper cooling chamber 5 and the lower cooling chamber 6 are connected, and the upper cooling chamber 5 and the lower cooling chamber 6 are injected with cooling medium.
当通过上壳体1和下壳体2对衬板8和SIC功率芯片9进行封装后，此时下壳体2上的连通管14会伸入至第一通孔15内，上冷却腔5和下冷却腔6通过连通管14和第一通孔15相连通，通过注液孔向下冷却腔6注入冷却介质时，可以同样为上冷却腔5内注入冷却介质，这样使得上冷却腔5和下冷却腔6内均被注入有冷却介质。After the liner 8 and the SIC power chip 9 are packaged by the upper shell 1 and the lower shell 2, the connecting tube 14 on the lower shell 2 will extend into the first through hole 15, and the upper cooling chamber 5 and the lower cooling chamber 6 are connected through the connecting tube 14 and the first through hole 15. When the cooling medium is injected into the lower cooling chamber 6 through the injection hole, the cooling medium can also be injected into the upper cooling chamber 5, so that the upper cooling chamber 5 and the lower cooling chamber 6 are both injected with cooling medium.
如图1所示，下隔板4上设置有半导体制冷片20，下隔板4上开设有矩形装配槽，半导体制冷片20位于装配槽内并通过密封胶固定，半导体制冷片20的冷端位于下冷却腔6内，半导体制冷片20的热端位于散热腔7内，散热腔7两侧的下壳体2壁体开设有散热孔。As shown in Figure 1, a semiconductor refrigeration sheet 20 is arranged on the lower partition 4, and a rectangular assembly groove is opened on the lower partition 4. The semiconductor refrigeration sheet 20 is located in the assembly groove and fixed by a sealant. The cold end of the semiconductor refrigeration sheet 20 is located in the lower cooling cavity 6, and the hot end of the semiconductor refrigeration sheet 20 is located in the heat dissipation cavity 7. The wall of the lower shell 2 on both sides of the heat dissipation cavity 7 is provided with heat dissipation holes.
冷却介质配合第一散热片17和第二散热片19对SIC功率芯片9散热降温的同时，冷却介质自身温度同样会上升，为了保证冷却介质的散热效果，设置有半导体制冷片20，半导体制冷片20通过冷端可以吸热并对冷却介质进行降温，从而使得冷却介质可以保持良好的散热效果。While the cooling medium cooperates with the first heat sink 17 and the second heat sink 19 to dissipate heat and cool down the SIC power chip 9, the temperature of the cooling medium itself will also rise. In order to ensure the heat dissipation effect of the cooling medium, a semiconductor refrigeration sheet 20 is provided. The semiconductor refrigeration sheet 20 can absorb heat through the cold end and cool the cooling medium, so that the cooling medium can maintain a good heat dissipation effect.
半导体制冷片20冷端吸收的热量会通过热端散发掉，当热端热量聚积过多时，将降低半导体制冷片20的制冷效果，为了在半导体制冷片20的热端贴合有散热器，并在散热器上加装风扇，由于散热腔7两端均有散热孔，这样风扇可以在散热腔7形成气流，通过空气流动来带走散热器上的热量，以此来对半导体制冷片20的热端散热。The heat absorbed by the cold end of the semiconductor refrigeration plate 20 will be dissipated through the hot end. When too much heat accumulates at the hot end, the cooling effect of the semiconductor refrigeration plate 20 will be reduced. In order to attach a radiator to the hot end of the semiconductor refrigeration plate 20 and install a fan on the radiator, since there are heat dissipation holes at both ends of the heat dissipation cavity 7, the fan can form an airflow in the heat dissipation cavity 7, and take away the heat on the radiator through the air flow, so as to dissipate the heat from the hot end of the semiconductor refrigeration plate 20.
如图1和图5所示，连接条12两端一体成型有“Z”型的弹性连接片13，连接条12两端的弹性连接片13分别与第一铝片10和第二铝片11相抵合，第一铝片10和第二铝片11为水平状布置。As shown in FIG. 1 and FIG. 5 , a “Z”-shaped elastic connecting piece 13 is integrally formed at both ends of the connecting strip 12 . The elastic connecting pieces 13 at both ends of the connecting strip 12 are respectively in contact with the first aluminum sheet 10 and the second aluminum sheet 11 . The first aluminum sheet 10 and the second aluminum sheet 11 are arranged horizontally.
由于连接条12与第一铝片10、第二铝片11为接触式导通，为了保证导通稳定性，设置有弹性连接片13，弹性连接片13自身形状设计，使其自身具有一定的弹性，当连接条12通过弹性连接片13与第一铝片10、第二铝片11贴合后，弹性连接片13处于压缩状，进而产生的弹性势能确保弹性连接片13可以与第一铝片10、第二铝片11抵紧。Since the connecting strip 12 is in contact conduction with the first aluminum sheet 10 and the second aluminum sheet 11, an elastic connecting sheet 13 is provided to ensure conduction stability. The shape of the elastic connecting sheet 13 is designed to have a certain elasticity. When the connecting strip 12 is bonded with the first aluminum sheet 10 and the second aluminum sheet 11 through the elastic connecting sheet 13, the elastic connecting sheet 13 is in a compressed state, and the elastic potential energy generated ensures that the elastic connecting sheet 13 can be tightly pressed against the first aluminum sheet 10 and the second aluminum sheet 11.
如图1和图6所示，衬板8表层金属片通过焊料连接有金属立柱21，上隔板3上活动连接有与金属立柱21对接的引脚23，上隔板3上开设有与金属立柱21相对应的第二通孔22，第二通孔22内设置有导电柱24，导电柱24底端外壁向外凸出形成有限位凸缘25，导电柱24底端与金属立柱21顶端相贴合，导电柱24的顶端与引脚23一端焊接固定，引脚23与上隔板3表面贴合，限位凸缘25与上隔板3底面贴合。As shown in Figures 1 and 6, the surface metal sheet of the lining plate 8 is connected to the metal column 21 by solder, and the upper partition plate 3 is movably connected with a pin 23 that docks with the metal column 21. The upper partition plate 3 is provided with a second through hole 22 corresponding to the metal column 21, and a conductive column 24 is arranged in the second through hole 22. The outer wall of the bottom end of the conductive column 24 protrudes outward to form a limiting flange 25. The bottom end of the conductive column 24 is in contact with the top end of the metal column 21, and the top end of the conductive column 24 is welded and fixed to one end of the pin 23. The pin 23 is in contact with the surface of the upper partition plate 3, and the limiting flange 25 is in contact with the bottom surface of the upper partition plate 3.
上隔板3上第二通孔22与密封板28的距离各不相同，两个引脚23长度各不相同。The distances between the second through hole 22 on the upper partition plate 3 and the sealing plate 28 are different, and the lengths of the two pins 23 are different.
金属立柱21通过导电柱24与引脚23间接的接触，并且导电柱24为圆柱体，导电柱24可以在第二通孔22内旋转，进而使得引脚23同样可以旋转。The metal pillar 21 is in indirect contact with the pin 23 through the conductive pillar 24 , and the conductive pillar 24 is a cylinder. The conductive pillar 24 can rotate in the second through hole 22 , thereby allowing the pin 23 to rotate as well.
由于两个引脚23的分布位置各不相同，这样在旋入至上壳体1内，两个引脚23不会发生碰撞和挤压，确保两个引脚23可以顺畅旋入和旋出。Since the two pins 23 are distributed at different positions, the two pins 23 will not collide or be squeezed when being screwed into the upper housing 1 , thereby ensuring that the two pins 23 can be screwed in and out smoothly.
限位凸缘25配合引脚23可以避免导电柱24从第二通孔22内脱落，进而使得引脚23在上隔板3上旋转时，不会脱落，结构合理。The limiting flange 25 cooperates with the pin 23 to prevent the conductive column 24 from falling out of the second through hole 22, so that the pin 23 will not fall out when rotating on the upper partition 3, and the structure is reasonable.
如图1和图2所示，上壳体1一侧开设有用于引脚23旋出的开口槽27，上壳体1顶部壁体贯穿有与其螺纹连接的限位柱26，限位柱26与第二通孔22个数相同并一一对齐，限位柱26底端与引脚23表面相抵合。As shown in Figures 1 and 2, an open groove 27 for screwing out the pin 23 is opened on one side of the upper shell 1, and a limiting column 26 threadedly connected to the top wall of the upper shell 1 passes through it. The limiting columns 26 are the same in number as the second through holes 22 and are aligned one by one, and the bottom end of the limiting column 26 is in contact with the surface of the pin 23.
开口槽27处的上壳体1内壁与密封板28围合形成一个凹槽，当引脚23旋入至该凹槽内时，这样可以对引脚23进行保护，避免引脚23因外力而发生断裂，当需要装配时，将引脚23从凹槽内旋出即可。The inner wall of the upper shell 1 at the opening groove 27 and the sealing plate 28 are combined to form a groove. When the pin 23 is screwed into the groove, the pin 23 can be protected to prevent the pin 23 from breaking due to external force. When assembly is required, the pin 23 can be screwed out of the groove.
当旋出后，由于引脚23处于自由旋转状态，为了保证了设备稳定和可靠性，设置有限位柱26，限位柱26顶端开设有十字槽或者内六角槽，这样可以通过工具拧动限位柱26，限位柱26可以旋转下行并与引脚23抵紧，这样确保引脚23可以保持住固定状态，限位柱26为绝缘塑料材质，以此保证了整体的安全性。After being screwed out, since the pin 23 is in a free rotation state, in order to ensure the stability and reliability of the equipment, a limit column 26 is provided. A cross slot or a hexagonal slot is provided at the top of the limit column 26, so that the limit column 26 can be screwed by a tool, and the limit column 26 can be rotated downward and pressed against the pin 23, thereby ensuring that the pin 23 can remain in a fixed state. The limit column 26 is made of insulating plastic material to ensure the overall safety.
在本说明书的描述中，属于“连接”、“安装”、“固定”等均应做广义理解，例如，“连接”可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接连接，也可以是通过中间媒介间接相连。对于本领域的普通技术人员而言，可以根据具体情况理解上述属于在本发明中的具体含义。In the description of this specification, "connection", "installation", "fixation" and the like should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
在本说明书的描述中，术语“一个实施例”、“一些实施例”、“具体实施例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或实例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或实例中以合适的方式结合。In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
以上仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410844620.7A CN118398568B (en) | 2024-06-27 | 2024-06-27 | High-durability silicon carbide power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410844620.7A CN118398568B (en) | 2024-06-27 | 2024-06-27 | High-durability silicon carbide power device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118398568A CN118398568A (en) | 2024-07-26 |
| CN118398568B true CN118398568B (en) | 2024-10-25 |
Family
ID=92001617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410844620.7A Active CN118398568B (en) | 2024-06-27 | 2024-06-27 | High-durability silicon carbide power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118398568B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113437037A (en) * | 2021-06-29 | 2021-09-24 | 中创杜菲(北京)汽车科技有限公司 | Package cooling device for power semiconductor |
| CN116995048A (en) * | 2023-09-26 | 2023-11-03 | 苏州中瑞宏芯半导体有限公司 | Copper strip bonding power module for vehicle |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5046378B2 (en) * | 2007-03-30 | 2012-10-10 | ニチコン株式会社 | Power semiconductor module and power semiconductor device equipped with the module |
| WO2011083737A1 (en) * | 2010-01-05 | 2011-07-14 | 富士電機システムズ株式会社 | Unit for semiconductor device, and semiconductor device |
| CN218333769U (en) * | 2022-08-23 | 2023-01-17 | 河北博威集成电路有限公司 | Silicon carbide power semiconductor high-voltage device packaging structure |
-
2024
- 2024-06-27 CN CN202410844620.7A patent/CN118398568B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113437037A (en) * | 2021-06-29 | 2021-09-24 | 中创杜菲(北京)汽车科技有限公司 | Package cooling device for power semiconductor |
| CN116995048A (en) * | 2023-09-26 | 2023-11-03 | 苏州中瑞宏芯半导体有限公司 | Copper strip bonding power module for vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118398568A (en) | 2024-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102201449B (en) | Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device | |
| CN109979896B (en) | Brand-new IGBT module | |
| CN216054669U (en) | Gallium nitride power device convenient to heat dissipation | |
| CN118398568B (en) | High-durability silicon carbide power device | |
| CN107507811A (en) | The chip cooling cooling device that a kind of flat-plate heat pipe cluster couples with semiconductor refrigerating | |
| CN211788977U (en) | Packaging structure of semiconductor device | |
| CN113707624A (en) | Gallium nitride power device and packaging method thereof | |
| JP2003289124A (en) | Semiconductor module | |
| CN117524647A (en) | Power transformer with high heat dissipation efficiency | |
| CN210805741U (en) | Semiconductor packaging structure | |
| CN100447989C (en) | Integrated circuit packaging and manufacturing method | |
| JPS6020538A (en) | semiconductor equipment | |
| CN115279015A (en) | A kind of semiconductor silicon carbide power module high temperature package and packaging method thereof | |
| CN209981203U (en) | Chip packaging structure convenient and rapid to radiate | |
| TW200416983A (en) | Package structure with a cooling system | |
| CN209183538U (en) | Highly integrated power modules and appliances | |
| CN221805513U (en) | High-power device | |
| CN220358073U (en) | Novel IGBT module with heat dissipation function | |
| CN221861642U (en) | Semiconductor device and electronic device with heat dissipation structure | |
| CN219108061U (en) | Synchronous heat radiation structure of printed circuit board and chip package | |
| CN115132907B (en) | Chip packaging device for integrated circuits | |
| CN212934591U (en) | Integrated circuit with overheat limiting | |
| CN222190717U (en) | A discrete device based on aluminum ribbon bonding | |
| CN219286390U (en) | Semiconductor structure | |
| CN220774347U (en) | Integrated circuit chip packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |