CN118381474A - Radio frequency power matching circuit - Google Patents
Radio frequency power matching circuit Download PDFInfo
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- CN118381474A CN118381474A CN202410832544.8A CN202410832544A CN118381474A CN 118381474 A CN118381474 A CN 118381474A CN 202410832544 A CN202410832544 A CN 202410832544A CN 118381474 A CN118381474 A CN 118381474A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The embodiment of the application provides a radio frequency power matching circuit, and relates to the technical field of radio frequency. The radio frequency power matching circuit at least comprises: a substrate; the front-stage device and the rear-stage device are arranged on the surface of the substrate; the passive matching circuit is arranged on the surface of the substrate, and at least comprises: a plurality of first inductance devices and first capacitance devices formed on the surface of the substrate; wherein the first inductive device comprises a plurality of series-connected inductors; at least one inductor is connected with at least one first capacitor device in parallel, a first end of the first inductor device is electrically connected with the front-stage device, a second end of the first inductor device is electrically connected with the rear-stage device, and the passive matching circuit is used for regulating and controlling the output impedance of the front-stage device to the target impedance range of the rear-stage device. A radio frequency power matching circuit is provided which can realize low cost, small area and high performance at the same time.
Description
Technical Field
The application relates to the technical field of radio frequency, in particular to a radio frequency power matching circuit.
Background
Referring to fig. 1, the radio frequency circuit generally includes a front-stage device and a rear-stage device, but the impedances of the front-stage device and the rear-stage device are not completely the same, once the impedances of the front-stage device and the rear-stage device are different, the indexes such as final output power and efficiency are easy to be caused to be unsatisfied with the system requirement, so that in order to realize the functions of power transmission, filtering and the like of the front-stage device and the rear-stage device, a matching circuit is generally added between the front-stage device and the rear-stage device, and the output impedance of the front-stage device and the input impedance of the rear-stage device are mutually matched through the matching circuit, so that the stability of the output power of the system is ensured.
Common matching circuits include two types: first, as shown in fig. 2, the whole circuit area is too large by using the wiring and the surface-mounted capacitor on the printed circuit board, which is not beneficial to the integration and miniaturization of the device; the second, as shown in fig. 3, is realized by wiring, surface-mounted capacitance or inductance on the substrate, the area is smaller than that of the printed circuit board, but the substrate cost is increased, meanwhile, the matching circuit and the active transistor in the power amplifier flow together, the inductance Q value (the quality factor of inductance, which is used for measuring the performance of the inductance device, represents the ratio of inductance resistance and equivalent loss resistance of the inductor when the inductor works under the alternating current voltage of a certain frequency) of the device is reduced, and the whole output power and the working efficiency of the matched power amplifier device are greatly reduced.
Therefore, the current matching circuit cannot realize low cost, small area and high performance at the same time.
Disclosure of Invention
In order to solve the above technical problems, an embodiment of the present application provides a radio frequency power matching circuit, which at least includes:
A substrate;
the front-stage device and the rear-stage device are arranged on the surface of the substrate;
the passive matching circuit is arranged on the surface of the substrate, and at least comprises:
A first inductance device and a first capacitance device formed on the surface of the substrate; the first inductance device comprises a plurality of inductors connected in series, at least one first capacitance device is connected in parallel with at least one inductor, a first end of the first inductance device is electrically connected with the front-stage device, a second end of the first inductance device is electrically connected with the rear-stage device, and the passive matching circuit is used for regulating and controlling the output impedance of the front-stage device to the target impedance range of the rear-stage device.
In an optional embodiment of the present application, the radio frequency power matching circuit further includes:
The resonant circuit is arranged on the surface of the substrate, the input end of the resonant circuit is electrically connected with the connection point of the first inductance device and the preceding-stage device, and the output end of the resonant circuit is grounded.
In an alternative embodiment of the application, the resonant circuit comprises at least:
a second inductance device, a first end of which is electrically connected with a connection point of the first inductance device and the preceding device;
and the second capacitor device is connected with the second inductor device in parallel, and one end of the second capacitor device is grounded.
In an optional embodiment of the present application, the radio frequency power matching circuit further includes:
and the multipath bias circuits are respectively connected with the preceding stage devices in parallel and are used for reducing the equivalent inductance value of the preceding stage devices.
In an alternative embodiment of the present application, the bias circuit includes:
And a third inductive device and a third capacitive component electrically connected to each other, wherein the third inductive device is electrically connected to the preceding device.
In an optional embodiment of the present application, the number of the preceding stage devices and the number of the passive matching circuits are all plural, and the passive matching circuits form a pi-type structure matching network, and the passive matching circuits are in one-to-one correspondence with the preceding stage devices, and each passive matching circuit is respectively used for adjusting and controlling the output impedance of each preceding stage device to the target impedance range corresponding to the subsequent stage device.
In an alternative embodiment of the application, at least one of said first inductive devices is constituted by a passive inductance; and/or at least one of the first capacitive devices is constituted by a passive capacitance.
In an alternative embodiment of the application, the passive inductor is formed by winding a trace on a substrate in a spiral manner.
In an alternative embodiment of the application, the pre-stage device comprises at least one power amplifier.
In an alternative embodiment of the present application, the first inductor device is connected to the preceding device and the following device by a wire bond.
In an alternative embodiment of the present application, the substrate is a glass substrate.
The embodiment of the application integrates the passive matching circuit, the front-stage device and the rear-stage device on a substrate and is connected with each other through metal wires and the like. In the integrated passive matching circuit, a plurality of inductors are connected in series to form a first inductance device, and then the first capacitance device is connected in parallel to form the passive matching circuit, and experiments prove that the output impedance of a preceding device (for example, a power amplifier) can be matched to 50 ohms.
In a first aspect, the radio frequency power matching circuit provided by the embodiment of the application integrates the passive matching circuit, the front-stage device and the rear-stage device on a substrate and is connected with each other through metal wires and the like, so that compared with a traditional printed circuit board scheme, the radio frequency power matching circuit reduces the use area of the substrate, and compared with a mode of adopting a surface-mounted capacitor and a surface-mounted inductor on the substrate, the radio frequency power matching circuit greatly reduces the cost. Referring to fig. 5, taking a glass substrate as an example, the passive matching circuit of the glass substrate has a use area of 2.44.5Mm, and the use area of the matching circuit on the printed circuit board is 5.613mm。
In a second aspect, the radio frequency power matching circuit provided by the embodiment of the application integrates the passive matching circuit, the front-stage device and the rear-stage device on a substrate, and is connected with each other through metal wires and the like, so that compared with a matching circuit which is traditionally manufactured on the substrate by using wiring and surface-mounted components, the radio frequency power matching circuit is lower in cost, easier to integrate and further promotes miniaturization of the semiconductor device.
In the third aspect, the conventional method for forming the wiring and placing the surface mount component pad on the substrate requires an additional complicated process, and has high cost; according to the embodiment of the application, the passive matching circuit is formed on the substrate, the substrate for placing the circuit does not need to be subjected to additional treatment, and the overall cost is greatly reduced.
In the fourth aspect, the conventional matching circuit needs to flow with an active transistor in the power amplifier, the inductance Q value of the device is smaller, but the radio frequency power matching circuit provided by the embodiment of the application integrates the passive matching circuit, the front-stage device and the rear-stage device on a substrate, and the passive matching circuit, the front-stage device and the rear-stage device are connected with each other through metal wires and the like, so that the current flow with the front-stage device or the rear-stage device is not needed, the inductance Q value of the formed first inductance device is higher, the loss is smaller, and the integral output power and the working efficiency of the rear-stage device can be greatly provided.
The radio frequency power matching circuit provided by the embodiment of the application integrates the passive matching circuit, the front-stage device and the rear-stage device on the same substrate, and the passive matching circuit formed by the first inductance device and the first capacitance device which are separated is integrated on the substrate through the interconnection of metal wires and the like, so that the substrate use area of the radio frequency power matching circuit is reduced, compared with the matching circuit realized on the substrate, the cost can be reduced, the passive capacitance of the substrate has higher capacitance density on the basis of ensuring withstand voltage, the passive first inductance device has higher inductance Q value, the front-stage device framework of the power amplifier and the like can be integrated in the passive matching circuit without the realization of external surface-mounted components, the integration level is higher, and the cost is lower. In summary, the embodiment of the application provides a radio frequency power matching circuit which can realize low cost, small area and high performance at the same time.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
Fig. 1 is a schematic diagram of an application scenario of a conventional rf power matching circuit;
FIG. 2 is a schematic diagram of a conventional RF power matching circuit formed by a printed circuit board;
FIG. 3 is a schematic diagram of a conventional RF power matching circuit formed on a substrate by means of wiring, surface mount capacitors or inductors;
fig. 4 is a schematic diagram of a radio frequency power matching circuit according to an embodiment of the present application;
Fig. 5 is a schematic diagram of a layout of a radio frequency power matching circuit structure on a substrate according to an embodiment of the present application;
fig. 6 is a graph of comparing Q value of a first inductor device in a radio frequency power matching circuit with Q value of an inductor in a conventional matching circuit according to an embodiment of the present application;
fig. 7 is a schematic diagram of a radio frequency power matching circuit according to an embodiment of the present application;
Fig. 8 is a schematic diagram of a radio frequency power matching circuit according to an embodiment of the present application;
fig. 9 is a schematic diagram of a radio frequency power matching circuit according to an embodiment of the present application.
Wherein:
10. a radio frequency power matching circuit; 100. a substrate; 200. a pre-stage device; 300. a passive matching circuit; 310. a first inductive device; 320. a first capacitive device; 330. a substrate; 340. a resonant circuit; 350. a bias circuit; 400. a metal wire.
Detailed Description
In the course of implementing the present application, applicants have found that current matching circuits cannot achieve low cost, small area and high performance at the same time.
In view of the above problems, an embodiment of the present application provides a radio frequency power matching circuit. In order to make the objects, technical solutions and advantages of the present application more apparent, the following embodiments are used to further describe a radio frequency power matching circuit of the present application in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The term "coupled" as used herein includes both direct and indirect coupling (coupling), unless otherwise indicated. In the description of the present application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Referring to fig. 1, the radio frequency circuit generally includes a front-stage device and a rear-stage device, but the impedances of the front-stage device and the rear-stage device are not completely the same, once the impedances of the front-stage device and the rear-stage device are different, the indexes such as final output power and efficiency are easy to be caused to be unsatisfied with the system requirement, so that in order to realize the functions of power transmission, filtering and the like of the front-stage device and the rear-stage device, a matching circuit is generally added between the front-stage device and the rear-stage device, and the output impedance of the front-stage device and the input impedance of the rear-stage device are mutually matched through the matching circuit, so that the stability of the output power of the system is ensured.
Common matching circuits include two types: first, as shown in fig. 2, the whole circuit area is too large by using the wiring and the surface-mounted capacitor on the printed circuit board, which is not beneficial to the integration and miniaturization of the device; the second, as shown in fig. 3, is realized by wiring, surface-mount capacitance or inductance on the substrate, and the area is smaller than that of the printed circuit board, but the cost of the substrate is increased; in addition, if the matching circuit and the active transistor in the power amplifier are connected together, the inductance Q value (the quality factor of the inductance, which is used for measuring the performance of the inductance device, represents the ratio of the inductance resistance and the equivalent loss resistance of the inductor when the inductor works under the alternating current voltage of a certain frequency) of the device is reduced, so that the overall output power and the working efficiency of the matched power amplifier device are greatly reduced.
Therefore, the current matching circuit cannot realize low cost, small area and high performance at the same time.
Referring to fig. 4, an embodiment of the present application provides a radio frequency power matching circuit 10, at least including: a substrate 100, a front-stage device 200, a back-stage device (not shown in the figure), and a passive matching circuit 300, wherein:
A substrate 100; the substrate 100 refers to a packaging substrate 100 of a chip, which is different from a conventional PCB (printed circuit board) circuit substrate, in this embodiment of the present application, the substrate 100 is made of a metal material, for example, copper metal Cu, cu in other areas except pin pins and islands on the surface of the substrate 100 is etched completely, and then a resin material (an insulating material) is used for filling and connecting to form a whole as a matrix for forming the rf power matching circuit 10, that is, in this substrate 100, the material for placing the chip, the rf matching circuit 10 and the pin area is copper, and the material for the remaining areas is resin.
A front-stage device 200 and a rear-stage device disposed on the surface of the substrate 100; the front-stage device 200 refers to an electronic device located in front of the passive rf power matching circuit 10, and the front-stage device 200 may be any device such as a power amplifier, an rf generator, etc.; correspondingly, the post-stage device refers to an electronic device located behind the passive matching circuit 300, and the post-stage device may be a radio frequency signal noise canceller, an antenna, etc., and the specific types of the pre-stage device 200 and the post-stage device are not limited in the embodiment of the present application, and may be flexibly set according to practical situations.
The passive matching circuit 300 is disposed on the surface of the substrate 100, and the passive matching circuit 300 includes at least: a first inductance device 310 and a first capacitance device 320 formed on a surface of the substrate 330; the first inductor device 310 includes a plurality of series-connected inductors, at least one of the inductors is connected in parallel with at least one first capacitor device 320, a first end of the first inductor device 310 is electrically connected with the preceding device 200, a second end of the first inductor device 310 is electrically connected with the following device, and if a first inductor and a last inductor of the first inductor device 310 are respectively electrically connected with the preceding device 200 and the following device; the passive matching circuit 300 is configured to regulate the output impedance of the preceding device 200 to a target impedance range of the following device.
The active device is an electronic device capable of actively amplifying, adjusting or controlling signals, and can actively participate in the circuit work and change the properties of the signals by providing energy through an external power supply; correspondingly, passive devices refer to electronic devices that cannot actively amplify, regulate or control signals, which cannot be powered by an external power source, and which rely on the signal energy on the transmission line to perform their function. The passive matching circuit 300 in the embodiment of the present application refers to a matching circuit that does not need to be powered by an external power source, and may be formed by the first inductor device 310, the first capacitor device 320, and the like. At least one of the first inductor device 310 and the first capacitor device 320 in the embodiment of the present application is a passive device, so as to form the passive matching circuit 300.
The "at least one inductor is connected in parallel with at least one first capacitive device 320" in the embodiment of the present application includes at least the following three cases:
In the first case, there is and only one inductor in parallel with one or more first capacitive devices 320;
in the second case, several (meaning the total number of more than 1 and less than the inductors) of the plurality of inductors are respectively connected in parallel with one or more first capacitive devices 320;
In a third case, each of the plurality of inductors has one or more first capacitive devices 320 connected in parallel.
With continued reference to fig. 4, the passive matching circuit 300, the front-stage device 200, and the back-stage device are integrated on a single substrate 100 and are connected to each other by metal lines 400 or the like. In the integrated passive matching circuit 300, the first inductance device 310 is formed by connecting a plurality of inductors in series, and then the passive matching circuit 300 is formed by connecting the first capacitance device 320 in parallel, and experiments prove that the output impedance of the front-stage device 200 (for example, a power amplifier) can be matched to 50 ohms.
In the first aspect, the rf power matching circuit 10 provided in the embodiment of the present application integrates the passive matching circuit 300, the front-stage device 200, and the rear-stage device on a substrate 100, and is connected to each other by the metal wire 400, which reduces the area of the substrate 100 compared with the conventional printed circuit board scheme, and greatly reduces the cost compared with the method of adopting the surface-mounted capacitor and the surface-mounted inductor on the substrate 100. Referring to fig. 5, taking the substrate 330 as the glass substrate 330 as an example, the passive matching circuit 300 of the glass substrate 330 has a use area of 2.44.5Mm, and the use area of the matching circuit on the printed circuit board is 5.613mm。
In a second aspect, the rf power matching circuit 10 provided in the embodiment of the present application integrates the passive matching circuit 300, the front-stage device 200, and the back-stage device on a substrate 100, and is connected to each other by the metal wire 400, which is lower in cost than a matching circuit conventionally fabricated on the substrate 100 by using wiring and surface-mounted devices, and is easier to integrate, thereby further promoting miniaturization of the semiconductor device.
In the third aspect, the conventional method for forming the trace and placing the surface mount component pad on the substrate 100 requires an additional complicated process for the substrate 100, which is costly; in the embodiment of the application, the passive matching circuit 300 is formed on the substrate 330, and the substrate 100 for placing the circuit does not need to be subjected to additional processing, so that the overall cost is greatly reduced.
In the fourth aspect, the conventional matching circuit needs to be formed together with an active transistor in the power amplifier, and the inductance Q value of the device is smaller, while the rf power matching circuit 10 provided in the embodiment of the present application integrates the passive matching circuit 300, the front-stage device 200 and the rear-stage device on a substrate 100, and is connected to each other through a metal wire 400, so that the active transistor does not need to be formed together with the front-stage device 200 or the rear-stage device, and the formed first inductance device 310 has a higher inductance Q value and a smaller loss, so that the overall output power and the working efficiency of the rear-stage device can be greatly provided.
For example, referring to fig. 6, the red line in fig. 6 is the Q value of the inductor of the first inductor device 310 (taking 8nH as an example) in the embodiment of the present application, the blue line is the same inductance value and uses the Q value of the inductor generated together with the active transistor, and as can be clearly seen from fig. 6, the Q value of the inductor of the first inductor device 310 in the embodiment of the present application is 20 higher than that of the inductor of the first inductor device 310 in the conventional mode at the frequency point of 0.9 GHz; the loss of signal energy due to the inductance of the large inductance Q is small, so that the rf matching circuit formed by the first inductive device 310 is more efficient than the matching circuit integrated with the active transistor.
The radio frequency power matching circuit 10 provided by the embodiment of the application integrates the passive matching circuit 300, the front-stage device 200 and the rear-stage device on the substrate 100, connects the passive matching circuit 300 formed by the first inductance device 310 and the first capacitance device 320 which are separated with each other through the metal wire 400 and the like, and integrates the passive matching circuit 300 on the substrate 330, thereby reducing the use area of the substrate 100 of the radio frequency power matching circuit 10, and compared with the matching circuit realized on the substrate 100, the cost can be reduced, the passive capacitance of the substrate 330 has higher capacitance density on the basis of ensuring voltage resistance, the passive first inductance device 310 has higher inductance Q value, and the front-stage device 200 architecture of the power amplifier and the like can be integrated in the passive matching circuit 300 without the realization of external surface-mounted components, and has higher integration level and lower cost. In summary, embodiments of the present application provide a radio frequency power matching circuit 10 that can achieve low cost, small area, and high performance at the same time.
Referring to fig. 7, in an alternative embodiment of the present application, the rf power matching circuit 10 further includes: a resonant circuit 340, wherein:
The resonant circuit 340 is disposed on the surface of the substrate 330, an input end of the resonant circuit 340 is electrically connected to a connection point between the first inductor device 310 and the pre-stage device 200, and an output end of the resonant circuit 340 is grounded.
It should be noted that, the first inductor device 310 in the embodiment of the present application includes a plurality of serially connected inductors, where a front-end inductor of the plurality of inductors is electrically connected to the front-stage device 200, and a rear-end inductor of the plurality of inductors is electrically connected to the rear-stage device, and a connection point between the input end of the resonant circuit 340 and the first inductor device 310 and the front-stage device 200 in the embodiment of the present application refers to a connection point between the front-end inductor of the plurality of inductors and the front-stage device 200.
In this embodiment, on the basis of fig. 4, at least one resonant circuit 340 is added to the connection point between the passive matching circuit 300 and the front-stage device 200, and in an alternative embodiment of the present application, the resonant circuit 340 includes at least: a second inductive device and a second capacitive device, wherein:
A first end of the second inductance device is electrically connected to a connection point of the first inductance device 310 and the pre-stage device 200; the second capacitor device is connected with the second inductor device in parallel, and one end of the second capacitor device is grounded.
I.e., by adding a series inductance first and adding and coupling a ground capacitance after the inductance, the resonant circuit 340 is formed to prevent radio frequency signals from leaking therefrom to the feed source and to feed direct current power directly into the pre-stage device 200. The embodiment of the application can continuously reduce the area required by the external printed circuit board by increasing the resonant circuit 340, adds the external decoupling capacitor and a section of equivalent inductance wiring into the circuit, reduces the integrated volume of the circuit and reduces the cost of the device.
Referring to fig. 8, in an alternative embodiment of the present application, the number of the pre-stage devices 200 and the number of the passive matching circuits 300 are all plural, and the passive matching circuits 300 form a pi-type matching network (abbreviated as CLC network), and the passive matching circuits 300 are in one-to-one correspondence with the pre-stage devices 200, and the passive matching circuits 300 are respectively configured to regulate the output impedance of each of the pre-stage devices 200 to the target impedance range corresponding to the post-stage devices.
In the foregoing embodiments, as shown in fig. 4 and fig. 7, the matching may be performed by a single AB-type transistor, in this embodiment, the number of the front-stage device 200 and the number of the passive matching circuits 300 are all plural, for example, the passive matching circuits 300 of the first path realize a broadband characteristic by two-stage integration CLC networks (i.e., parallel capacitors, serial inductors, parallel capacitors) on the substrate 330, the passive matching circuits 300 of the first path also realize another broadband characteristic by two-stage integration CLC, and an additional stage CLC realizes a high-resistance state when low power, and finally connect to the output pins of the substrate 100 through the metal wire 400 to complete the matching. Matching of different broadband characteristics can be achieved through the multipath passive matching circuit 300, and the application range of the radio frequency power matching circuit 10 provided by the embodiment of the application is improved.
Referring to fig. 9, in an alternative embodiment of the present application, the rf power matching circuit 10 further includes: and a multi-path bias circuit 350, wherein the multi-path bias circuits 350 are respectively connected with the preceding devices 200 in parallel for reducing the equivalent inductance value of the preceding devices 200. The bias circuit 350 includes:
A third inductive device and a third capacitive component electrically connected to each other, wherein the third inductive device is electrically connected to the pre-stage device 200. The passive matching circuit 300 of the embodiment of the application integrates a plurality of bias circuits 350 passive matching circuits 300 on the substrate 330, which can greatly reduce the equivalent inductance of the output end of the preceding device 200 and greatly improve the video bandwidth index of the whole preceding device 200.
In the embodiment of the application, taking the pre-stage device 200 as a power amplifier as an example, in order to amplify the signal voltage without distortion, the forward bias of the emission junction and the reverse bias of the collection junction of the transistor must be ensured. I.e. the operating point of the transistor should be set. The operating point is that the base, emitter and collector of the transistor are set at the required potential (which can be obtained by calculation) by the arrangement of an external circuit, which is called a bias circuit 350. Video Bandwidth (VBW) is an important indicator of current base station broadband power amplifier products, and its formation mainly depends on the resonance point formed at low frequency by the sum of the equivalent capacitances and the sum of the equivalent inductances from the drain of the transistor of the power amplifier. The current method for improving video bandwidth is to reduce the size of equivalent inductance by the number of parallel inductors, and is usually realized by adding a bias branch (equivalent to a section of inductor connected in series with a grounded radio frequency decoupling capacitor) on a PCB, but the routing length of the equivalent inductance is close to the routing length of a feed circuit, so that the method can further increase the area of the PCB;
The passive inductance in embodiments of the present application may be formed by routing wires on the substrate 330 in a spiral fashion. The area required by the equivalent inductance with the same value is greatly reduced by the spiral winding mode; meanwhile, in the embodiment of the application, the inductance Q value of the first inductance device 310 formed on the substrate 330 is high, so that the loss of the matching circuit can be reduced; in addition, the first capacitor device 320 formed on the substrate 330 according to the embodiment of the present application has a higher capacitance density on the basis of ensuring withstand voltage, so that the area of the rf decoupling capacitor for achieving the required equivalent capacitance is also smaller; therefore, the embodiment of the application can also connect the multi-section bias circuit 350 in parallel to reduce the equivalent inductance of the output end of the transistor in the front-stage device 200 on the basis of meeting the area of the matching circuit. As shown in fig. 9, in the matching circuit of the substrate 330, a plurality of (> =1) bias circuits 350 are integrated, which has a good effect in reducing the equivalent inductance of the transistors in the front-stage device 200, and can improve the overall video bandwidth of the front-stage device 200.
In an alternative embodiment of the present application, the first inductance device 310 is formed by at least one passive inductance; and/or, the first capacitive device 320 is formed by at least one passive capacitor.
The radio frequency power matching circuit 10 provided by the embodiment of the application integrates the first inductance device 310 formed by the passive inductance and the first capacitance device 320 formed by the passive capacitance on the substrate 330, and the first inductance device and the first capacitance device are connected with each other through the metal wire 400 and the like, so that the use area of the substrate 100 of the radio frequency power matching circuit 10 is reduced, and compared with a matching circuit realized on the substrate 100, the radio frequency power matching circuit can also reduce the cost.
In an alternative embodiment of the present application, the pre-stage device 200 includes at least one power amplifier, which is formed of active transistors.
That is, the embodiment of the application does not need to flow the active transistor and other devices in the power amplifier together based on the traditional process to cause the inductance Q value of the devices, the inductance Q value of the formed first inductance device 310 is higher, the loss is smaller, and the integral output power and the working efficiency of the rear-stage devices can be greatly provided.
With continued reference to fig. 5, in an alternative embodiment of the present application, the first inductor device 310 is bonded to the front-stage device 200 and the back-stage device by a metal wire 400.
In this embodiment, an output matching circuit applied to a power amplifier of 0.73-0.96 GHz chip is formed by integrally connecting a bonding pad required for the outside, a first inductance device 310 formed by internal winding, and a first capacitance device 320 formed by multi-layer plate shape on a substrate 330, input pads of a passive matching circuit 300 are respectively connected to drains of main and auxiliary power amplifiers through metal bonding wires, and output pads of the passive matching circuit 300 are connected to output pads of the integrated substrate 100 through metal bonding wires.
In an alternative embodiment of the present application, the substrate 330 is a glass substrate 330.
That is, in the integrated circuit formed on the glass substrate 330 in the embodiment of the present application, the substrate 100 on which the circuit is placed does not need to be subjected to additional processing, and the substrate 100 needs to be subjected to additional complicated procedures in the conventional positions of forming the wiring on the substrate 100 and placing the surface mount component pads, so that the cost is high; in the embodiment of the application, the passive matching circuit 300 is formed on the glass substrate 330, and the substrate 100 for placing the circuit does not need to be subjected to additional processing, so that the overall cost is greatly reduced.
One embodiment of the present application provides a radio frequency circuit comprising:
the radio frequency power matching circuit 10 as claimed in any one of the preceding claims.
The beneficial effects of the rf power matching circuit 10 are described in detail in the above embodiments, and are not described herein.
One embodiment of the present application provides a radio frequency device comprising:
a radio frequency circuit as described above.
The beneficial effects of the rf circuit are described in detail in the above embodiments, and are not described herein.
It should be understood that, although the steps in the flowchart are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the figures may include multiple sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, nor does the order in which the sub-steps or stages are performed necessarily performed in sequence, but may be performed alternately or alternately with at least a portion of other steps or other steps.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (11)
1. A radio frequency power matching circuit comprising at least:
A substrate;
the front-stage device and the rear-stage device are arranged on the surface of the substrate;
the passive matching circuit is arranged on the surface of the substrate, and at least comprises:
A first inductance device and a first capacitance device formed on the surface of the substrate; the first inductance device comprises a plurality of inductors connected in series, at least one first capacitance device is connected in parallel with at least one inductor, a first end of the first inductance device is electrically connected with the front-stage device, a second end of the first inductance device is electrically connected with the rear-stage device, and the passive matching circuit is used for regulating and controlling the output impedance of the front-stage device to the target impedance range of the rear-stage device.
2. The radio frequency power matching circuit of claim 1, further comprising:
The resonant circuit is arranged on the surface of the substrate, the input end of the resonant circuit is electrically connected with the connection point of the first inductance device and the preceding-stage device, and the output end of the resonant circuit is grounded.
3. The radio frequency power matching circuit of claim 2, wherein said resonant circuit comprises at least:
a second inductance device, a first end of which is electrically connected with a connection point of the first inductance device and the preceding device;
and the second capacitor device is connected with the second inductor device in parallel, and one end of the second capacitor device is grounded.
4. The radio frequency power matching circuit of claim 1, further comprising:
and the multipath bias circuits are respectively connected with the preceding stage devices in parallel and are used for reducing the equivalent inductance value of the preceding stage devices.
5. The radio frequency power matching circuit of claim 4, wherein said biasing circuit comprises:
a third inductive device and a third capacitive component electrically connected to each other; wherein the third inductance device is electrically connected with the preceding device.
6. The rf power matching circuit of claim 1, wherein the number of the preceding devices and the number of the passive matching circuits are all plural, the plurality of the passive matching circuits form a pi-structure matching network, the passive matching circuits are in one-to-one correspondence with the preceding devices, and each passive matching circuit is respectively used for adjusting and controlling the output impedance of each preceding device to the target impedance range corresponding to the succeeding device.
7. The radio frequency power matching circuit according to any of claims 1-6, wherein said first inductive device is comprised of at least one passive inductor; and/or the first capacitive device is constituted by at least one passive capacitance.
8. The rf power matching circuit of claim 7, wherein said passive inductor is formed by routing on said substrate in a spiral fashion.
9. The radio frequency power matching circuit of any of claims 1-6, wherein said pre-stage device comprises at least one power amplifier.
10. The radio frequency power matching circuit of any of claims 1-6, wherein said first inductive device is connected to said front-end device and said back-end device by wire bonding.
11. The radio frequency power matching circuit of any of claims 1-6, wherein said substrate is a glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410832544.8A CN118381474A (en) | 2024-06-26 | 2024-06-26 | Radio frequency power matching circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410832544.8A CN118381474A (en) | 2024-06-26 | 2024-06-26 | Radio frequency power matching circuit |
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| CN118381474A true CN118381474A (en) | 2024-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202410832544.8A Pending CN118381474A (en) | 2024-06-26 | 2024-06-26 | Radio frequency power matching circuit |
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| CN218827106U (en) * | 2022-11-30 | 2023-04-07 | 深圳飞骧科技股份有限公司 | Heterogeneous packaging substrate and heterogeneous packaging module |
| CN117678156A (en) * | 2021-06-24 | 2024-03-08 | 安普林荷兰有限公司 | Doherty power amplifier |
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2024
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| JP2001007601A (en) * | 1999-06-18 | 2001-01-12 | Teratec:Kk | Power supply circuit |
| CN105322912A (en) * | 2014-08-02 | 2016-02-10 | 软控股份有限公司 | Distributed surface acoustic wave resonator and surface acoustic wave sensing system |
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