Detailed Description
Reference now will be made in detail to embodiments of the invention, one or more examples of which are described below. Each example is provided by way of explanation, not limitation, of the invention. Indeed, it will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the scope or spirit of the invention. For example, features illustrated or described as part of one embodiment can be used on another embodiment to yield still a further embodiment.
Accordingly, it is intended that the present invention cover such modifications and variations as fall within the scope of the appended claims and their equivalents. Other objects, features and aspects of the present invention will be disclosed in or be apparent from the following detailed description. It is to be understood by one of ordinary skill in the art that the present discussion is a description of exemplary embodiments only, and is not intended as limiting the broader aspects of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. The indefinite articles "a" and "an" preceding an element or component of the invention are not limited to the requirement (i.e. the number of occurrences) of the element or component. Thus, the use of "a" or "an" should be interpreted as including one or at least one, and the singular reference of an element or component includes the plural reference unless the amount clearly dictates otherwise. The meaning of "a plurality of" means at least two, e.g., two, three, etc., unless explicitly defined otherwise.
The weights of the relevant components mentioned in the description of the embodiments of the present invention may refer not only to the specific contents of the components, but also to the proportional relationship between the weights of the components, so long as the contents of the relevant components in the description of the embodiments of the present invention are scaled up or down within the scope of the disclosure of the embodiments of the present invention. Specifically, the weight described in the specification of the embodiment of the invention can be mass units known in the chemical industry field such as mu g, mg, g, kg.
Except where shown or otherwise indicated in the operating examples, all numbers expressing quantities of ingredients, physical and chemical properties, and so forth, used in the specification and claims are to be understood as being modified in all instances by the term "about". For example, therefore, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can be varied appropriately by those skilled in the art utilizing the teachings disclosed herein seeking to obtain the desired properties. The use of numerical ranges by endpoints includes all numbers subsumed within that range and any range within that range, e.g., 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4, 5, and the like.
The perovskite precursor solution comprises perovskite precursor salt, glycerol and a second organic solvent, wherein the concentration of the glycerol is 0.05 mg/mL-0.65 mg/mL.
According to the perovskite precursor solution, the organic solvent is improved without adopting an additive containing inorganic ions or metal ions, specifically, the first organic solvent glycerol of a specific type is added into the perovskite precursor solution, the specific concentration of the glycerol in the perovskite precursor solution is controlled, the viscosity of the perovskite precursor solution can be increased, the volatilization speed of the solvent in the perovskite precursor solution is reduced, the solvent can not react with the perovskite precursor salt, the film forming speed of the perovskite film is effectively delayed, new defects are avoided, and the inorganic ions or the metal ions can not be additionally introduced into the perovskite film, so that the photoelectric conversion efficiency of the perovskite film is effectively improved.
It is understood that the concentration of glycerol refers to the mass of glycerol/(the total volume of the first organic solvent after mixing with the second organic solvent); it is further understood that the concentration of glycerol, including but not limited to 0.05 mg/mL、0.08 mg/mL、0.1 mg/mL、0.15 mg/mL、0.2 mg/mL、0.25 mg/mL、0.3 mg/mL、0.35 mg/mL、0.4 mg/mL、0.45 mg/mL、0.5 mg/mL、0.55 mg/mL、0.6 mg/mL、0.65 mg/mL;, may be within the range that any two of these points constitute as endpoints in some examples, as follows.
In some examples, the concentration of glycerol in the perovskite precursor solution is 0.2 mg/mL to 0.6 mg/mL.
In some examples, the concentration of glycerol in the perovskite precursor solution is 0.2 mg/mL to 0.4 mg/mL.
In some of these examples, the perovskite precursor solution includes a monovalent cation halide and a divalent cation halide.
In some examples, the monovalent cation halide comprises at least one of a monovalent organic cation halide and an alkali metal halide in the perovskite precursor solution.
In some examples, the monovalent organic cations in the monovalent organic cation halide in the perovskite precursor solution include at least one of an organic amine ion and a formamidine ion.
In some examples, the monovalent organic cations in the monovalent organic cation halide in the perovskite precursor solution include at least one of CH3NH3 +(MA+)、CH3(CH2)nNH3 +、HC(NH2)2 +(FA+) and C 6H5(CH2)n·NH3 +; wherein n is an integer of 1 to 3.
It is understood that CH 3(CH2)nNH3 + includes CH3CH2NH3 +、CH3(CH2)2NH3 +、CH3(CH2)3NH3 +,C6H5(CH2)n·NH3 + includes C6H5CH2NH3 +、C6H5(CH2)2NH3 +、C6H5(CH2)3NH3 +.
In some of these examples, the halide ion in the monovalent organic cationic halide in the perovskite precursor solution includes at least one of F -、Cl-、Br- and I -.
In some examples, the monovalent cation halide in the perovskite precursor solution includes at least one of formamidine iodide (FAI), formamidine bromide (FABr), formamidine chloride (FACl), methylamine iodide (MAI), methylamine bromide (MABr), and methylamine chloride (MACl).
In some of these examples, the alkali metal ions in the metal halide in the perovskite precursor solution include at least one of Li +、Na+、K+、Rb+ and Cs +.
In some of these examples, the halide ions in the alkali metal halide in the perovskite precursor solution include at least one of F -、Cl-、Br- and I -.
In some of these examples, the metal halide includes at least one of cesium bromide (CsBr) and cesium iodide (CsI) in the perovskite precursor solution.
In some of these examples, the divalent cation in the divalent cation halide comprises at least one of Pb 2+ and Sn 2+ in the perovskite precursor solution.
In some of these examples, the halide ions in the divalent cation halide comprise at least one of F -、Cl-、Br- and I - in the perovskite precursor solution.
In some of these examples, the divalent cation halide includes at least one of lead iodide (PbI 2), tin iodide, lead bromide, and tin bromide in the perovskite precursor solution.
In some examples, the concentration of monovalent cation halides and divalent cation halides in the perovskite precursor solution are each independently 0.5 mol/L to 5 mol/L.
It is understood that the concentrations of monovalent and divalent cationic halides independently include, but are not limited to, 0.5 mol/L, 1 mol/L, 1.5 mol/L, 1.8 mol/L, 2 mol/L, 3 mol/L, 4 mol/L, 5 mol/L, respectively.
In some examples, the perovskite precursor solution, the second organic solvent comprises at least one of N, N-dimethylformamide, dimethylsulfoxide, N-methylpyrrolidone, and γ -butyrolactone.
In some examples, the perovskite precursor solution, the second organic solvent includes N, N-dimethylformamide and dimethylsulfoxide.
In some examples, the volume ratio of dimethyl sulfoxide to N, N-dimethylformamide in the perovskite precursor solution is 1 (2-10).
It is understood that the volume ratio of dimethyl sulfoxide to N, N-dimethylformamide includes, but is not limited to, 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10.
An embodiment of the present application provides a method for preparing a perovskite precursor solution, including the steps of:
Mixing a perovskite precursor salt, a first organic solvent and a second organic solvent to obtain a perovskite precursor solution; the first organic solvent is glycerol, the second organic solvent is different from the first organic solvent, and the concentration of the glycerol is 0.05 mg/mL-0.7 mg/mL.
According to the preparation method of the perovskite precursor solution, the specific type of first organic solvent glycerol is added into the perovskite precursor salt, and the specific concentration of the glycerol in the perovskite precursor solution is controlled, so that the film forming rate of the perovskite film can be effectively delayed, new defects are avoided, inorganic ions or metal ions are not additionally introduced into the perovskite film, and the photoelectric conversion efficiency of the perovskite film can be effectively improved.
It is understood that the perovskite precursor solution provided by the application can be prepared by the perovskite precursor solution preparation method provided by the application.
In some examples, the perovskite precursor solution is prepared by mixing a first organic solvent and a second organic solvent and then adding a perovskite precursor salt.
In some examples, the perovskite precursor solution is prepared by mixing glycerol and N, N-dimethylformamide, then adding dimethyl sulfoxide, and then adding the perovskite precursor salt.
An embodiment of the application provides a perovskite thin film, which is prepared from the perovskite precursor solution.
The perovskite thin film provided by the application has higher photoelectric conversion efficiency.
In some of these examples, the perovskite thin film has a thickness of 400 nm to 600: 600 nm.
It is understood that the thickness of the perovskite thin film includes, but is not limited to, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm.
An embodiment of the application provides a preparation method of a perovskite thin film, which comprises the following steps:
preparing a wet film from the perovskite precursor solution;
and (5) annealing the wet film to obtain the perovskite film.
The perovskite film preparation method provided by the application is prepared by adopting the perovskite precursor solution, the film forming rate is relatively slow, and the photoelectric conversion efficiency of the perovskite film can be effectively improved.
In some examples, in the preparation method of the perovskite thin film, the annealing treatment temperature is 120-180 ℃ and the annealing treatment time is 10-20 min.
It is understood that the annealing temperatures include, but are not limited to, 120 ℃, 130 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃, 180 ℃ for times including, but not limited to, 10 min, 12 min, 15min, 18 min, 20 min.
It is to be understood that the present application is not limited to the manner in which the wet film is formed, including, but not limited to, spin coating, spray coating, knife coating, or the like.
In some examples, the perovskite thin film is prepared by spin coating to form a wet film.
In some examples, the perovskite thin film is prepared at a spin coating rate of 1200 r/min to 4000 r/min.
It is understood that the rate of spin coating includes, but is not limited to 1200 r/min、1500 r/min、1800 r/min、2000 r/min、2500 r/min、2800 r/min、3000 r/min、3200 r/min、3500 r/min、3800 r/min、4000 r/min.
In some examples, the method for preparing the perovskite thin film comprises sequentially performing first spin coating and second spin coating, wherein the first spin coating is performed at a speed of 1200 r/min-1500 r/min, and the second spin coating is performed at a speed of 3500 r/min-4000 r/min.
In some examples, in the preparation method of the perovskite thin film, the time of the first spin coating is 15 s-20 s, and the time of the second spin coating is 30 s-40 s.
It is understood that the first spin-coating times include, but are not limited to, 15 s, 16 s, 17 s, 18 s, 19 s, 20 s, and the second spin-coating times include, but are not limited to, 30 s, 31 s, 32 s, 33 s, 34 s, 35 s, 36 s, 37 s, 38 s, 39 s, 40 s.
In some examples, the method for preparing a perovskite thin film further includes a step of dropping an antisolvent in the second spin coating step.
In some examples, the anti-solvent includes at least one of diethyl ether, chlorobenzene, anisole, and ethyl acetate.
An embodiment of the present application provides a perovskite battery including a first electrode, a second electrode, and the perovskite thin film.
In some of these examples, the perovskite battery further includes a hole transport layer and an electron transport layer, one of the hole transport layer and the electron transport layer being disposed between the first electrode and the perovskite thin film, and the other of the hole transport layer and the electron transport layer being disposed between the perovskite thin film and the second electrode.
It is understood that when the hole transport layer is disposed between the first electrode and the perovskite thin film, the electron transport layer is disposed between the perovskite thin film and the second electrode; when the electron transport layer is arranged between the first electrode and the perovskite thin film, the hole transport layer is arranged between the perovskite thin film and the second electrode. That is, in some examples, in a perovskite battery, the perovskite battery includes a first electrode, a hole transport layer, a perovskite thin film, an electron transport layer, and a second electrode that are stacked in this order; in other examples, the perovskite battery includes a first electrode, an electron transport layer, a perovskite thin film, a hole transport layer, and a second electrode that are stacked in this order.
In some of these examples, the electron transport layer comprises at least one of C60, PCBM, tiO 2, and SnO 2 in a perovskite cell.
In some of these examples, the electron transport layer comprises a dense electron transport layer comprising an organic titanium source and a mesoporous electron transport layer comprising an inorganic titanium source, arranged in a stack.
By arranging the compact electron transport layer and the mesoporous electron transport layer, the perovskite thin film is formed, and the electric leakage phenomenon is effectively avoided.
In some examples, the perovskite battery comprises a first electrode, a dense electron transport layer, a mesoporous electron transport layer, a perovskite thin film, a hole transport layer and a second electrode which are sequentially stacked.
In some of these examples, the organic titanium source comprises titanium diisopropoxide bis acetylacetonate in the perovskite cell.
In some of these examples, the inorganic titanium source comprises at least one of titanium dioxide and titanium tetrachloride in the perovskite cell.
In some examples, the thickness of the dense electron transport layer is 10 nm to 20 nm and the thickness of the mesoporous electron transport layer is 100 nm to 200 nm in the perovskite cell.
In some of these examples, the hole transport layer comprises a Spiro-ome tad in a perovskite cell.
In some of these examples, the hole transport layer has a thickness of 150 nm to 300 nm in the perovskite cell.
In some of these examples, in the perovskite cell, one of the first electrode and the second electrode is a transparent conductive electrode, and the other is one of a transparent conductive electrode and a metal electrode;
In some of these examples, the perovskite cell has at least one of the first electrode and the second electrode being a transparent conductive electrode.
In some of these examples, the perovskite cell has one of the first electrode and the second electrode being a transparent conductive electrode and the other being one of a transparent conductive electrode and a metal electrode.
It will be appreciated that in a perovskite cell, the first electrode and the second electrode may be transparent conductive electrodes at the same time; the first electrode may be a transparent conductive electrode, and the second electrode may be a metal electrode; the first electrode may be a metal electrode, and the second electrode may be a transparent conductive electrode.
In some of these examples, the perovskite cell, the metal electrode comprises at least one of gold (Au), silver (Ag), and copper (Cu).
In some of these examples, the transparent conductive electrode includes at least one of Indium Tin Oxide (ITO), fluorine doped indium tin oxide (FTO), indium Zinc Oxide (IZO), tungsten doped indium oxide (IWO), and aluminum doped zinc oxide (AZO) in the perovskite cell.
In some examples, the thickness of the first electrode and the second electrode are each independently 20 nm to 200 nm in the perovskite battery.
It is understood that the thicknesses of the first and second electrodes independently include, but are not limited to, 20 nm, 50nm, 80 nm, 100 nm, 120 nm, 150 nm, 180 nm, 200nm, respectively.
The perovskite battery provided by the application comprises the perovskite thin film, so that the perovskite battery has at least the same advantages as the perovskite thin film.
An embodiment of the present application provides a method for manufacturing a perovskite battery, including the steps of:
Setting perovskite precursor solution on a first electrode, and forming a perovskite film on the first electrode after annealing treatment; the perovskite precursor solution comprises perovskite precursor salt, a first organic solvent and a second organic solvent which are mixed with each other, wherein the first organic solvent is glycerol, the second organic solvent is different from the first organic solvent in kind, and the concentration of the glycerol is 0.05 mg/mL-0.7 mg/mL;
a second electrode is formed on a surface of the perovskite thin film remote from the first electrode.
It is understood that the features of the above-described method for producing a perovskite thin film are applicable to the steps for producing a perovskite thin film in the method for producing a perovskite battery provided by the present application.
It is further understood that the perovskite precursor solution is provided on the conductive side surface of the first electrode.
In some examples, the method for preparing a perovskite battery further comprises:
One of the hole transport layer and the electron transport layer is provided between the first electrode and the perovskite thin film, and the other of the hole transport layer and the electron transport layer is provided between the perovskite thin film and the second electrode.
It is understood that the electron transport layer may be disposed between the first electrode and the perovskite thin film or may be disposed between the perovskite thin film and the second electrode.
That is, in some examples, the step of disposing the electron transport layer includes:
the first mixed solution is arranged on the first electrode, and a compact electron transport layer is formed after first annealing treatment; the first mixed solution comprises an organic titanium source and a third organic solvent;
The second mixed solution is arranged on the surface of the compact electron transport layer far away from the first electrode, and a mesoporous electron transport layer is formed after the second annealing treatment; the second mixed solution comprises an inorganic titanium source and a fourth organic solvent.
In some examples, the third organic solvent comprises n-butanol.
In some examples, in the preparation method of the perovskite battery, the volume ratio of the organic titanium source to the third organic solvent is 1 (14-18).
In some of these examples, the fourth organic solvent comprises ethanol.
In some examples, in the preparation method of the perovskite battery, the mass ratio of the inorganic titanium source to the fourth organic solvent is 1 (6-8).
In some examples, in the preparation method of the perovskite battery, the temperature of the first annealing treatment is 100-130 ℃ and the time is 10-12 min.
In some examples, in the preparation method of the perovskite battery, the temperature of the second annealing treatment is 400-500 ℃ and the time is 120-150 min.
It can be understood that the third annealing treatment is the annealing treatment in the preparation method of the perovskite thin film, and the temperature of the third annealing treatment is 120-180 ℃ and the time is 10-20 min.
In some examples, the perovskite battery is prepared by a method that a first mixed solution is arranged on the surface of the conductive side of the first electrode by a dynamic spin coating method, and a second mixed solution is arranged on the surface of the dense electron transport layer away from the first electrode by a static spin coating method.
In some examples, in the preparation method of the perovskite battery, the spin coating rate of the dynamic spin coating method is 1800 rpm/min-2200 rpm/min, and the time is 30 s-50 s.
In some examples, in the preparation method of the perovskite battery, the spin coating rate of the static spin coating method is 4500 rpm/min-5500 rpm/min, and the time is 5 s-15 s.
It is understood that the formation modes of the hole transport layer, the second electrode layer, and the like are not limited, and the formation modes commonly used in the art may include, but are not limited to, one of a magnetron sputtering method, a spin coating method, a slit coating method, and an evaporation method.
In some examples, the method for preparing a perovskite battery further comprises a step of preprocessing the transparent conductive electrode before forming the film layer on the surface of the transparent conductive electrode.
In some examples, the step of preprocessing includes:
and cleaning, drying and ultraviolet ozone treatment are sequentially carried out on the transparent conductive electrode.
It is understood that the cleaning agent used for the cleaning includes, but is not limited to, at least one of water, acetone, isopropyl alcohol, ethanol, glass cleaning agent, and the like.
It can be appreciated that the perovskite battery can be prepared by the preparation method of the perovskite battery provided by the application, and the perovskite battery can also be prepared by the preparation method of the perovskite battery provided by the application.
An embodiment of the application provides a photovoltaic device comprising the perovskite battery or the perovskite battery prepared by the preparation method.
The photovoltaic module comprises the perovskite battery provided by the application, and therefore has at least the same advantages as the perovskite battery.
The present application will be described in further detail with reference to the following specific embodiments, but the embodiments of the present application are not limited thereto.
The transparent conductive layers used in the following examples and comparative examples were pretreated, including: sequentially carrying out ultrasonic cleaning by deionized water, glass cleaning agent, isopropanol, ethanol and deionized water, wherein the cleaning time is 20 min each time, then drying in an oven to remove impurities and moisture on the surface of the FTO, and finally carrying out ultraviolet ozone treatment on the FTO glass.
Example 1
(1) And dynamically spin-coating (2000 rpm/min,40 s) a first mixed solution containing titanium diisopropoxy diacetylacetonate and n-butanol in a volume ratio of 1:16 onto the transparent conductive layer, placing the transparent conductive layer in a drying oven at 120 ℃ after spin-coating, and drying 10 min to form a compact electron transport layer, wherein the thickness of the compact electron transport layer is about 10-20 nm.
(2) And (3) carrying out static spin coating (5000 rpm/min,10 s) on a second solution containing titanium dioxide and ethanol in a mass ratio of 1:8 on the compact electron transport layer, and then placing the compact electron transport layer on a flat heating table and heating at 500 ℃ for 1h to form a mesoporous titanium dioxide electron transport layer, wherein the thickness of the mesoporous titanium dioxide electron transport layer is about 100-200 nm.
(3) Dissolving glycerol into DMF solvent, adding DMSO and stirring uniformly to obtain mixed solvent; in the mixed solvent, the concentration of glycerol is 0.08 mg/mL, and the volume ratio of DMSO to DMF is 1:4; FAI, pbI 2 and MACl are added into a mixed solvent according to the mol ratio of 1:1:0.4 to obtain perovskite precursor solutions, wherein the concentration of FAI and PbI 2 in the perovskite precursor solutions is 1.8 mol/L respectively.
(4) Spin-coating the perovskite precursor solution prepared in the step (3) onto the surface of the mesoporous titanium dioxide electron transport layer formed in the step (2) far away from the compact electron transport layer in two steps, wherein the two steps of spin-coating comprise: the spin coating rate in the first step is 1500 r/min, 18s; the spin coating rate in the second step is 3500 r/min,35s; after the second spin-coating step 15 s, 1 mL of the antisolvent diethyl ether was added dropwise. After spin coating, the perovskite film is formed by heating 15 min at 150 ℃ and the thickness is about 550 a nm a.
(5) And (3) carrying out static spin coating (4000 rpm/min,30 s) on the surface of the perovskite film, oxidizing 12: 12 h in dry air to form a hole transport layer, wherein the thickness is about 180: 180 nm, and scraping out the conductive area by using a knife.
(6) The Au electrode was evaporated by vacuum evaporation to a thickness of about 80 nm a.
Example 2
Substantially the same as in example 1, except that in step (3) of example 2, the concentration of glycerol in the mixed solvent was 0.2 mg/mL.
Example 3
Substantially the same as in example 1, except that in step (3) of example 3, the concentration of glycerol in the mixed solvent was 0.4 mg/mL.
Example 4
Substantially the same as in example 1, except that in step (3) of example 4, the concentration of glycerol in the mixed solvent was 0.6 mg/mL.
Comparative example 1
Substantially the same as in example 1, except that no glycerol was added to the mixed solvent in step (3) of comparative example 1.
Comparative example 2
Substantially the same as in example 1, except that in step (3) of comparative example 2, the concentration of glycerin in the mixed solvent was 0.8 mg/mL.
Comparative example 3
Substantially the same as in example 1, except that in step (3) of comparative example 3, the concentration of glycerin in the mixed solvent was 0.7 mg/mL.
Comparative example 4
Substantially the same as in example 1, except that in step (3) of comparative example 4, the concentration of glycerol in the mixed solvent was 0.01 mg/mL.
Comparative example 5
Substantially the same as in example 1, except that in step (3) of comparative example 5, glycerol in the mixed solvent was replaced with glycerol p-aminobenzoate at an equal concentration.
Comparative example 6
Substantially the same as in example 1, except that in step (3) of comparative example 6, glycerol in the mixed solvent was replaced with isopropyl alcohol at an equal concentration.
Comparative example 7
Substantially the same as in example 1, except that in step (3) of comparative example 7, glycerol in the mixed solvent was replaced with ethylene glycol of equal concentration.
The perovskite batteries prepared in each example and comparative example were tested for performance in terms of open circuit voltage, short circuit current density, fill factor, and energy conversion efficiency using an I-V curve under the following test conditions: AM 1.5G standard solar spectrum, irradiance is 1000W/m 2.
The experimental test results are shown in Table 1. Wherein PCE represents photoelectric conversion efficiency in%, voc represents open circuit voltage in V, jsc represents short circuit current density in mA/cm 2, and FF represents fill factor in%.
TABLE 1
Wherein, the glycerol concentration in table 1 refers to the concentration of glycerol in the mixed solution of step (3).
As can be seen from table 1, the perovskite batteries prepared in examples have better overall performance in terms of open circuit voltage, short circuit current density, fill factor, and energy conversion efficiency than the comparative examples. Wherein, the glycerol concentration in the comparative examples 2 and 3 is too high, which plays a role in inhibiting the performance of the battery, so that the PCE is not as good as that of the comparative example 1 without glycerol; the comparative example 4 has too low concentration of the glycerol and has little effect of improving the performance of the battery; comparative examples 5 to 7, glycerol in the mixed solvent was replaced with glycerol paraaminobenzoate, isopropanol and ethylene glycol in equal concentrations, respectively, and the test results showed that glycerol paraaminobenzoate, isopropanol and ethylene glycol had limited improvement effect on battery performance.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which facilitate a specific and detailed understanding of the technical solutions of the present application, but are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. It should be understood that, based on the technical solutions provided by the present application, those skilled in the art may obtain technical solutions through logical analysis, reasoning or limited experiments, which are all within the scope of protection of the appended claims. The scope of the patent of the application should therefore be determined with reference to the appended claims, which are to be construed as in accordance with the doctrines of claim interpretation.