CN115843205B - A kind of preparation method of perovskite film layer and perovskite solar cell - Google Patents
A kind of preparation method of perovskite film layer and perovskite solar cell Download PDFInfo
- Publication number
- CN115843205B CN115843205B CN202310139148.2A CN202310139148A CN115843205B CN 115843205 B CN115843205 B CN 115843205B CN 202310139148 A CN202310139148 A CN 202310139148A CN 115843205 B CN115843205 B CN 115843205B
- Authority
- CN
- China
- Prior art keywords
- perovskite
- guanidine
- layer
- film
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
本申请属于钙钛矿太阳能电池技术领域，本申请提供了一种钙钛矿膜层的制备方法及钙钛矿太阳能电池，所述的钙钛矿膜层的制备方法包括以下步骤：将钙钛矿前驱体溶液施加在传输层薄膜表面，形成第一涂层；提供含胍盐的有机盐溶液，涂布于形成的第一涂层表面，经退火处理，得到胍盐修饰的钙钛矿膜层；所述胍盐选自碘化胍、甲胍、盐酸胍、N‑Boc‑胍、乙酸胍、二苯胍和硫酸胍中的一种或多种。本发明实现梯度可控胍盐修饰，钙钛矿表面的修饰官能团最多；相较于单独制备钝化层可以避免额外界面的产生；梯度掺杂钙钛矿层有助于调整钙钛矿层功函数分布，有益于电荷传输。
The application belongs to the technical field of perovskite solar cells. The application provides a method for preparing a perovskite film layer and a perovskite solar cell. The preparation method of the perovskite film layer includes the following steps: The ore precursor solution is applied on the surface of the transport layer film to form the first coating; an organic salt solution containing guanidinium salt is provided, coated on the surface of the formed first coating, and annealed to obtain a perovskite film modified by guanidinium salt layer; the guanidine salt is selected from one or more of guanidine iodide, methylguanidine, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenylguanidine and guanidine sulfate. The invention realizes gradient controllable guanidinium salt modification, and the modified functional groups on the surface of the perovskite are the most; compared with preparing the passivation layer alone, the generation of additional interfaces can be avoided; the gradient doping of the perovskite layer helps to adjust the work function distribution of the perovskite layer , which is beneficial for charge transport.
Description
Technical Field
The application belongs to the technical field of perovskite solar cells, and particularly relates to a preparation method of a perovskite film layer and a perovskite solar cell.
Background
At present, the perovskite solar cell has the characteristics of high conversion efficiency, easiness in preparation, low cost and the like, so that the perovskite solar cell has the potential of becoming a new generation of photovoltaic. Perovskite solar cells can be structurally divided into: a metal electrode, a transport layer material (transport electron or hole), a perovskite light absorption layer, a transport layer material (transport hole or electron), and a bottom transparent electrode. When the hole transport layer material is on the upper layer, the hole transport layer material is called a formal perovskite solar cell, whereas the electron transport material is in a trans form when on the upper layer. In the battery with the two structures, the preparation of the perovskite light absorption layer comprises the steps of forming a perovskite film in a wet method and a dry method. Perovskite crystal is ABX 3 The A-position is usually an organic cation, the B is a metal cation, and the metal cation mainly comprises lead and cesium, and the X-position is I, br and other halogen anions.
However, the open circuit voltage of perovskite solar cells is limited by the non-radiative recombination of carriers at the perovskite/charge transport layer interface, and therefore, seeking a solution to overcome the recombination of carriers is an effective way to improve the performance of perovskite solar cells.
Optimizing the interface by an interface passivation strategy or using additives is an effective way to address interfacial carrier recombination, but both strategies often suffer from certain technical drawbacks. For example, interface passivation often requires a separate passivation step to be formed before or after the perovskite layer is prepared, but the passivation layer is thin and requires high uniformity, although it is formed between the perovskite layer and the charge transport layer, so passivation film formation technology is a technical difficulty, and the passivation layer introduces a new interface to the device to some extent. Additive engineering is generally directed to perovskite layers that, while optimizing the interface, will also cause a performance change for non-interfacial perovskite, thereby adversely affecting cell performance.
Disclosure of Invention
Aiming at the defects in the prior art, the perovskite film layer preparation method and the perovskite solar cell are provided, and the perovskite layer with controllable interface passivation gradient is prepared, so that the perovskite film layer is beneficial to charge transmission and is beneficial to improving the performance of the cell.
The invention provides a preparation method of a perovskite film layer, which comprises the following steps:
applying a perovskite precursor solution to the surface of the transmission layer film to form a first coating;
providing organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and carrying out annealing treatment to obtain a guanidine salt modified perovskite film layer; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenylguanidine and guanidine sulfate.
Preferably, the concentration of guanidine salt in the organic salt solution containing guanidine salt is less than 20mg/L, wherein the solvent is isopropanol or chlorobenzene.
Preferably, the organic salt solution containing a guanidine salt further comprises a perovskite organic active ingredient.
Preferably, the perovskite precursor solution is a lead-containing precursor solution and/or a cesium-containing precursor solution.
Preferably, the transport layer film is an electron transport layer film or a hole transport layer film.
Preferably, the thickness of the guanidine salt modified perovskite film layer is 400-500 nm.
Preferably, the annealing treatment temperature is 100-200 ℃.
The invention provides a perovskite solar cell, wherein a perovskite absorption layer is a perovskite film layer obtained by the preparation method.
Guanidine salt is an organic compound with good solubility and rich NH 2 The group is a good modification method for improving the interface performance between the perovskite layer and the charge transport layer. It can form a strong interaction with the substrate and form a passivation layer at the perovskite interface.
Compared with the prior art, the preparation of the perovskite film layer provided by the application is a novel method suitable for guanidine salt passivation, is suitable for preparing the perovskite layer by a two-step method, and comprises the following steps: firstly, adopting perovskite precursor solution to form a coating in the first step; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenyl guanidine and guanidine sulfate, and is dissolved in an antisolvent or a second-step solution to prepare the perovskite layer. The doping of the existing additive is uniform doping of the perovskite layer, and the gradient controllable guanidine salt modification is realized, and the modification functional groups on the surface of the perovskite are the most; the generation of an additional interface can be avoided compared with the preparation of the passivation layer alone; the gradient doped perovskite layer is beneficial to adjusting the work function distribution of the perovskite layer and is beneficial to charge transmission.
Drawings
FIG. 1 is a schematic illustration of a preparation flow of some embodiments of the present invention;
FIG. 2 is an SEM of a perovskite film layer of example 1;
fig. 3 is an SEM of the perovskite film layer of comparative example 1.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully, and it is apparent that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The application provides a preparation method of a perovskite film layer, which comprises the following steps:
applying a perovskite precursor solution to the surface of the transmission layer film to form a first coating;
providing organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and carrying out annealing treatment to obtain a guanidine salt modified perovskite film layer; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenylguanidine and guanidine sulfate.
The perovskite layer with controllable interface passivation gradient is beneficial to charge transmission and is beneficial to improving the battery performance.
Referring to fig. 1, fig. 1 is a schematic illustration of a two-step process according to some embodiments of the present invention. The embodiment of the invention can spin-coat the lead-containing precursor liquid on the first charge transmission layer film, and heat the film by a heat table to form PbI 2 Film (first coating); and spin-coating the second-step solution containing guanidine salt on the first coating, and annealing to complete two-step film forming steps to obtain the perovskite film.
At present, the common transparent electrode materials of the solar cell are Indium Tin Oxide (ITO) and fluorine doped SnO 2 (FTO). According to the embodiment of the invention, indium tin oxide glass is mainly used as a transparent electrode substrate, and perovskite solar cells are prepared. The ITO conductive glass is mainly formed by plating a layer of transparent Indium Tin Oxide (ITO) film on glass by using a magnetron sputtering method, and mainly uses soda lime glass as a substrate. The ITO film layers have different thicknesses, and the ITO glass has different conductive performance and light transmittance. The embodiment of the invention adopts the conventional transparent electrode material, for example, the glass thickness is 1-2mm, and the film thickness is 100-200nm. In the embodiment of the invention, the commercially available ITO conductive glass is preferably cleaned by ethanol, isopropanol (IPA) and acetone respectively, and can be dried by a nitrogen gun.
In some embodiments of the present invention, an electron transport layer film is first laminated to the surface of a transparent substrate. The embodiment of the invention prepares an electron transfer precursor solution: and dissolving the electron transport layer material in water or alcohol solvent, and fully stirring to obtain electron transport precursor solution. The electron transporting precursor solution may be a precursor solution of a metal oxide electron transporting material, including tin dioxide (SnO 2 ) ZnO (zinc oxide), titanium dioxide (TiO) 2 ) A nano-dispersion solution of the electron transport layer material, or a sol solution for preparing an electron transport layer, etc.
Taking tin dioxide film as an example, the method specifically comprises the following steps of: tin dioxide (SnO) 2 ) Diluting the stock solution with water (laboratory ultrapure water), and stirring thoroughly to obtain SnO 2 Precursor solution. The SnO 2 In the precursor solution, the volume ratio of the tin dioxide to the water can be 1:5-6, and SnO is taken 2 The precursor solution is uniformly spread on the surface of the ITO conductive glass, and parameters of a spin coater are preferably set as follows: spin 4000rpm/s for 30s; then placing the mixture on a heat table at 100-150 ℃ for annealing to obtain SnO 2 The thickness of the film can be 30-50nm. SnO formed as described above 2 The film is placed in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
In other embodiments of the present invention, a hole transport layer is first formed on a transparent substrate. Illustratively, niO disposed on the surface of the substrate x Thin film (thickness 20 nm) obtained by conventional magnetron sputtering; the NiO is treated by x The film is treated with oxygen plasma. The hole transport layer material can be spiro-OMeTAD or CuO x And the thickness is in the range of 10nm to 100nm.
Then, the perovskite precursor solution is spin-coated on the surface of the transmission layer film to form a first coating. Wherein the perovskite precursor solution is typically a lead (Pb) containing precursor solution and/or a cesium (Cs) containing precursor solution.
The perovskite precursor liquid is prepared firstly and a coating is formed, and the method specifically comprises the following steps: pbI 2 Dissolving in DMF (N, N-dimethylformamide) or DMSO (dimethyl sulfoxide), heating and stirring to obtain PbI 2 The precursor solution (which may be referred to as the first solution). Uniformly spreading the first solution on the surface of the annealed transmission layer film, wherein the parameters of a spin coater are preferably set as follows: speed 2200-2400rpm/s, time 30-50s; then heating the mixture in a heat table at 70-80 ℃ to remove the solvent to obtain PbI 2 The film is the first coating.
The embodiment of the invention prepares the organic salt solution containing guanidine salt, wherein the guanidine salt comprises guanidine iodide and guanidine (C) 2 H 7 N 3 ) Guanidine hydrochloride, (CH) 5 N 3 HCl), N-Boc-guanidine (C 6 H 13 N 3 O 2 ) Second stepGuanidine acid (C) 3 H 7 N 3 O 2 ) Diphenylguanidine (C) 13 H 13 N 3 ) And guanidine sulfate (C) 2 H 10 N 6 ·H 2 SO 4 ) Further, one or more of guanidine, guanidine hydrochloride and N-Boc-guanidine, and the commercial products can be obtained. Preferably, the concentration of guanidine salt in the organic salt solution containing guanidine salt is less than 20mg/L, which is beneficial to crystallization. Wherein the guanidine salt can be added to an antisolvent such as chlorobenzene, or a second step solution containing a perovskite active ingredient.
For example, FAI (formamidine iodide) and MAI (methyl ammonium iodide) are dissolved in a solvent such as isopropyl alcohol (IPA), stirred to be sufficiently dissolved, and guanidine salt is added to the above solution to obtain an organic salt solution (which is a second solution) containing guanidine salt. Uniformly spreading the second solution on the surface of the formed first coating, wherein parameters of a spin coater can be set as follows: speed 3000rpm/min, time 30-40s; and then placing the perovskite thin film on a heat table at 100-200 ℃ for annealing for 10-20min to obtain the guanidine salt modified perovskite thin film with the thickness of 400-500 nm.
Correspondingly, the invention provides a perovskite solar cell, wherein the perovskite absorption layer is the perovskite film layer obtained by the preparation method.
Some embodiments of the invention provide steps for preparing the perovskite solar cell comprising:
1. cleaning transparent electrode glass;
2. preparing a first charge transport layer;
3. a perovskite layer first step;
4. in the process of preparing the perovskite film layer by a two-step method, adding guanidine salt into the solution of the second step to perform perovskite film formation;
5. preparing a second charge transport layer;
6. and preparing a metal counter electrode.
In the embodiment of the invention, the preparation of the charge transport layer and the metal counter electrode is conventional; such as gold electrodes (Au) prepared by thermal evaporation.
The performance of the prepared perovskite solar cell is detected, and the result shows that the performance of the prepared perovskite solar cell is improved based on the perovskite layer formed by the two-step method, and the perovskite solar cell is beneficial to application.
In order to better understand the technical content of the present invention, specific examples are provided below to further describe the preparation method of the perovskite film layer and the perovskite solar cell thereof. Wherein, the examples of the invention use commercial raw materials.
Example 1
1.5cm of Indium Tin Oxide (ITO) glass was cleaned with ethanol, isopropyl alcohol (IPA) and acetone, respectively, for 30 minutes, and dried with a nitrogen gun. The glass thickness was 2mm and the ITO film thickness was 100nm.
Tin dioxide (SnO) 2 ) Diluting the stock solution and ultrapure water according to the volume ratio of 1:5, and fully stirring to obtain SnO 2 A precursor solution; 50 mu L SnO was taken 2 The precursor solution is evenly spread on the surface of the ITO conductive glass, and parameters of a spin coater are set as follows: spin 4000rpm/s for 30s; then annealing for 30min on a heat table at 150 ℃ to obtain SnO 2 Thin film (30 nm). SnO prepared as described above 2 The film is placed in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
Weigh 0.6g PbI 2 Dissolving in a mixed solution of 900 μl DMF and 100 μl DMSO, heating and stirring at 70deg.C to dissolve thoroughly to obtain PbI 2 Precursor solution (first solution). 50mg of FAI and 10mg of MAI were weighed, dissolved in 1mL of IPA solution, stirred to be sufficiently dissolved, and 0.5mg of N-Boc-guanidine was weighed and added to the above solution to obtain an organic salt solution (second solution) containing guanidine salt.
Uniformly spreading 60 mu L of the first solution on the annealed SnO 2 Film surface, spin coater parameter sets as: speed 2300rpm/s, time 30s; then the mixture was placed on a 75℃hot plate for 1min to form a first coating. Uniformly spreading 80 mu L of the second solution on the surface of the formed first coating, and setting parameters of a spin coater to be: speed 3000rpm/min, time 30s; and then annealing for 15min at 150 ℃ to obtain the guanidine salt modified perovskite thin film (450 nm).
260mg of lithium bistrifluoro-methanesulfonimide salt (Li-TFSI) was weighed and dissolved in 1mL of acetonitrile (CAN), and the mixture was sufficiently stirred to obtain a Li-TFSI solution. 80mg of 2, 7-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9, 9-spirobifluorene (Spiro-MeOTAD) is then weighed and dissolved in 1mL of chlorobenzene, and stirred thoroughly until dissolved; then, 30. Mu.L of 4-t-butylpyridine (TBP) solution and 35. Mu.L of Li-TFSI solution were added thereto, and the mixture was sufficiently stirred to obtain a hole transporting layer solution.
Uniformly spreading 50 mu L of hole transport layer solution on the surface of the perovskite film, wherein parameters of a spin coater are set as follows: the hole transport layer (50 nm) was obtained at a speed of 3000rpm/min for 30 s.
Transferring the whole body containing the hole transport layer into a thermal evaporation equipment, and vacuum degree reaches 1×10 -5 Starting evaporating an electrode (Au) under the condition of Pa, wherein the thickness is 100nm; then, the mixture was placed in an oxygen glove box and oxidized overnight to obtain a battery.
Comparative example 1
Comparative example 1 was prepared without addition of guanidine salt in the second step.
The morphology testing method comprises the following steps: microtopography testing was performed on the perovskite thin film using a Hitachi S-4800 high resolution field emission Scanning Electron Microscope (SEM). Fig. 2 is a Scanning Electron Microscope (SEM) photograph of the perovskite film layer of example 1, and fig. 3 is a SEM photograph of comparative example 1. It can be seen that the perovskite grain size of the examples of the present invention is significantly larger than that of the comparative examples.
Photoelectric conversion performance test: the PCE employed tests the current density-voltage (JV) curve of the battery. The test was completed at the kethley 2400 system test. Test conditions: the simulated light intensity is 100 mW cm -2 (AM 1.5G) scanning Rate of 0.1 V.s -1 (step size 0.02V, time delay 200 ms), scan interval 1.2V to-0.2V, power output of xenon lamp calibrated 2 by KG5 standard Si battery of NERL (National Renewable Energy Laboratory) standard. The results are as follows.
Example 2
1.5cm of Indium Tin Oxide (ITO) glass was cleaned with ethanol, isopropyl alcohol (IPA) and acetone, respectively, for 30 minutes, and dried with a nitrogen gun. The glass thickness was 2mm and the ITO film thickness was 100nm.
Tin dioxide (SnO) 2 ) Diluting the stock solution and ultrapure water according to the volume ratio of 1:5, and fully stirring to obtain SnO 2 A precursor solution; 50 mu L SnO was taken 2 The precursor solution is evenly spread on the surface of the ITO conductive glass, and parameters of a spin coater are set as follows: spin 4000rpm/s for 30s; then annealing for 30min on a heat table at 150 ℃ to obtain SnO 2 Thin film (30 nm). SnO prepared as described above 2 The film is placed in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
Weigh 0.6g PbI 2 Dissolving in a mixed solution of 900 μl DMF and 100 μl DMSO, heating and stirring at 70deg.C to dissolve thoroughly to obtain PbI 2 Precursor solution (first solution). 50mg of FAI and 10mg of MAI were weighed, dissolved in 1mL of IPA solution, stirred to be sufficiently dissolved, and 0.4mg of N-Boc-guanidine and 0.4mg of guanidine were weighed and added to the above solutions to obtain an organic salt solution (second solution) containing guanidine salt.
Uniformly spreading 60 mu L of the first solution on the annealed SnO 2 Film surface, spin coater parameter sets as: speed 2300rpm/s, time 30s; then the mixture was placed on a 75℃hot plate for 1min to form a first coating. Uniformly spreading 80 mu L of the second solution on the surface of the formed first coating, and setting parameters of a spin coater to be: speed 3000rpm/min, time 30s; and then annealing for 15min at 150 ℃ to obtain the guanidine salt modified perovskite thin film (450 nm).
260mg of lithium bistrifluoro-methanesulfonimide salt (Li-TFSI) was weighed and dissolved in 1mL of acetonitrile (CAN), and the mixture was sufficiently stirred to obtain a Li-TFSI solution. 80mg of 2, 7-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9, 9-spirobifluorene (Spiro-MeOTAD) is then weighed and dissolved in 1mL of chlorobenzene, and stirred thoroughly until dissolved; then, 30. Mu.L of 4-t-butylpyridine (TBP) solution and 35. Mu.L of Li-TFSI solution were added thereto, and the mixture was sufficiently stirred to obtain a hole transporting layer solution.
Uniformly spreading 50 mu L of hole transport layer solution on the surface of the perovskite film, wherein parameters of a spin coater are set as follows: the hole transport layer (50 nm) was obtained at a speed of 3000rpm/min for 30 s.
Transferring the whole body containing the hole transport layer into a thermal evaporation equipment, and vacuum degree reaches 1×10 -5 Starting evaporating an electrode (Au) under the condition of Pa, wherein the thickness is 100nm; then, the mixture was placed in an oxygen glove box and oxidized overnight to obtain a battery.
Comparative example 2
Comparative example 2 was prepared without addition of guanidine salt in the second step. Comparative example 2 is different from comparative example 1 in that the battery structure employed in the two examples is different.
The test was conducted in accordance with the method of example 1, and the results were as follows.
Example 3
A substrate: 1.5 cm. 1.5cm FTO film (glass thickness 1mm, FTO film thickness 200 nm); FTO glass was purged with ethanol, isopropyl alcohol (IPA) and acetone, respectively, for 30 minutes each, and blow dried with a nitrogen gun.
NiO arranged on the surface of the substrate x Thin film (thickness 20 nm), magnetron sputtering; the NiO is treated by x The film was treated with oxygen plasma for 10min at a power of 2kW.
Preparing 20% calcium titanium mineral layer precursor liquid (CsBr: 0.15mol/L, pbI) 2 :1mol/L, FAI:0.85 mol/L) and DMF+DMSO (volume ratio 8: 2) Uniformly stirring to obtain a perovskite precursor solution, adding 3mg of guanidine hydrochloride into 6mL of chlorobenzene, and uniformly stirring to obtain a reverse solution (second solution) with a modification effect; and preparing a perovskite active layer on the surface of the substrate by adopting a spin coating method at the speed of 3500 rpm for 40s by taking 50 mu L of perovskite precursor solution. Taking 800 mu L of second solution to rapidly drip onto a spin-coating slice when the spin-coating time reaches 10s, and annealing at 150 ℃ for 15min after spin-coating is finished to obtain a perovskite film (400 nm);
and evaporating a C60 electron transport layer (40 nm) on the surface of the prepared perovskite film to obtain the battery.
Transferring the whole body containing the electron transport layer into a thermal evaporation equipment, and vacuum degree reaches 1×10 -5 Starting evaporating copper electrode (Cu) under Pa condition, wherein the thickness is 100nm; a battery was obtained.
Comparative example 3
Comparative example 3 was prepared without addition of guanidine salt in the second step. The test was conducted in accordance with the method of example 1, and the results were as follows.
From the above examples, the present invention first uses perovskite precursor solution to form the first step coating; the perovskite layer preparation is carried out by dissolving a specific guanidine salt in an anti-solvent or a second step solution. The method has simple and convenient process steps, can realize controllable guanidine salt modification gradient, has the most modified functional groups on the surface of the perovskite, avoids generating additional interfaces, is beneficial to adjusting the work function distribution of the perovskite layer and is beneficial to charge transmission, thereby improving the performance of the perovskite solar cell.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (4)
1. The preparation method of the perovskite film layer is characterized by comprising the following steps of:
applying a perovskite precursor solution to the surface of the transmission layer film to form a first coating; the perovskite precursor solution is lead-containing precursor solution and/or cesium-containing precursor solution, and does not contain perovskite organic active components, wherein the solvent is DMF and DMSO;
providing organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and carrying out annealing treatment to obtain a guanidine salt modified perovskite film layer; the guanidine salt is selected from one or more of guanidine, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenylguanidine and guanidine sulfate; the thickness of the perovskite film layer modified by guanidine salt is 400-500 nm, and a perovskite layer with controllable interface passivation gradient is obtained;
the concentration of guanidine salt in the organic salt solution containing guanidine salt is less than 20mg/L, wherein the solvent is isopropanol, and the organic salt solution containing guanidine salt also contains perovskite organic active ingredient.
2. The method for producing a perovskite film layer according to claim 1, wherein the transport layer film is an electron transport layer film or a hole transport layer film.
3. The method for preparing a perovskite film layer according to claim 2, wherein the annealing treatment temperature is 100-200 ℃.
4. A perovskite solar cell, wherein the perovskite absorption layer is a perovskite film layer obtained by the preparation method according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310139148.2A CN115843205B (en) | 2023-02-20 | 2023-02-20 | A kind of preparation method of perovskite film layer and perovskite solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310139148.2A CN115843205B (en) | 2023-02-20 | 2023-02-20 | A kind of preparation method of perovskite film layer and perovskite solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115843205A CN115843205A (en) | 2023-03-24 |
| CN115843205B true CN115843205B (en) | 2023-05-23 |
Family
ID=85579944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310139148.2A Active CN115843205B (en) | 2023-02-20 | 2023-02-20 | A kind of preparation method of perovskite film layer and perovskite solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115843205B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020206873A1 (en) * | 2019-04-11 | 2020-10-15 | 浙江大学 | Film thickness-insensitive inverted-type thick-film two-dimensional hybrid perovskite solar cell and preparation method thereof |
| CN111933801A (en) * | 2020-08-12 | 2020-11-13 | 南昌大学 | Reverse planar perovskite solar cell device with guanidine hexafluorophosphate interface modification layer and preparation method thereof |
| CN113241409A (en) * | 2021-04-19 | 2021-08-10 | 陕西师范大学 | Perovskite solar cell and preparation method |
| CN114156414A (en) * | 2021-11-30 | 2022-03-08 | 合肥工业大学 | A kind of preparation method of efficient and stable CsPbI3 inorganic perovskite battery |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR112018000181B1 (en) * | 2015-07-10 | 2022-12-27 | Hunt Perovskite Technologies, L.L.C. | PHOTOVOLTAIC DEVICE COMPRISING PEROVSKITE MATERIAL |
| CN109065723A (en) * | 2018-07-13 | 2018-12-21 | 华中科技大学 | A method of solar battery open-circuit voltage is promoted based on additive |
| US12243740B2 (en) * | 2018-11-21 | 2025-03-04 | Cubicpv Inc. | Enhanced perovskite materials for photovoltaic devices |
| CN111599923A (en) * | 2020-05-15 | 2020-08-28 | 成都新柯力化工科技有限公司 | Method for improving efficiency of perovskite solar cell |
| CN114267789A (en) * | 2021-11-29 | 2022-04-01 | 南昌大学 | A method to simultaneously improve the open circuit voltage and stability of full-textured perovskite/crystalline silicon tandem solar cells |
| CN115188893A (en) * | 2022-06-30 | 2022-10-14 | 泉州师范学院 | Perovskite solar cell and preparation method |
| CN115568263A (en) * | 2022-09-28 | 2023-01-03 | 南开大学 | A kind of preparation method of perovskite active layer in solar cell |
-
2023
- 2023-02-20 CN CN202310139148.2A patent/CN115843205B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020206873A1 (en) * | 2019-04-11 | 2020-10-15 | 浙江大学 | Film thickness-insensitive inverted-type thick-film two-dimensional hybrid perovskite solar cell and preparation method thereof |
| CN111933801A (en) * | 2020-08-12 | 2020-11-13 | 南昌大学 | Reverse planar perovskite solar cell device with guanidine hexafluorophosphate interface modification layer and preparation method thereof |
| CN113241409A (en) * | 2021-04-19 | 2021-08-10 | 陕西师范大学 | Perovskite solar cell and preparation method |
| CN114156414A (en) * | 2021-11-30 | 2022-03-08 | 合肥工业大学 | A kind of preparation method of efficient and stable CsPbI3 inorganic perovskite battery |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115843205A (en) | 2023-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113437226B (en) | Preparation method of 4-pyridine methylamine bromine optimized tin-lead mixed perovskite solar cell | |
| WO2023155562A1 (en) | Halide perovskite solar cell and bottom interface self-growth modification method therefor | |
| CN110854271B (en) | A kind of highly stable perovskite solar cell and its preparation method | |
| CN110729403A (en) | Preparation method and application of high-quality organic-inorganic hybrid perovskite film | |
| CN114597311A (en) | Perovskite thin film, perovskite solar cell and preparation method thereof | |
| CN118019419A (en) | Perovskite solar cell and preparation method thereof and photovoltaic device | |
| CN110112301A (en) | It is a kind of regulate and control calcium titanium ore bed crystal growth method and its application in solar cells | |
| CN115161012A (en) | A kind of perovskite material, thin film and solar cell device and preparation method thereof | |
| CN115020241A (en) | A reducing solvent for preparing tin-containing perovskite and its application | |
| CN106252517A (en) | A perovskite photovoltaic cell with CuyCrzO2 thin film as hole transport layer and preparation method thereof | |
| WO2025031218A1 (en) | Perovskite ink, preparation method for perovskite cell, and perovskite cell | |
| CN118414002A (en) | Solar cell and preparation method thereof, photovoltaic module and photovoltaic system | |
| CN115843205B (en) | A kind of preparation method of perovskite film layer and perovskite solar cell | |
| CN114447234B (en) | Organic-inorganic hybrid perovskite surface interface treatment method, material and application | |
| CN115768148A (en) | A highly stable perovskite solar cell based on co-modification of organic and inorganic salts of trifluoroacetic acid | |
| CN114944457A (en) | A kind of perovskite solar cell and preparation method thereof | |
| CN114944456A (en) | A kind of perovskite solar cell and preparation method thereof | |
| CN109802045B (en) | Preparation of perovskite solar cells using NaTaO3 and PCBM as double electron transport layers | |
| CN116507185B (en) | Formamidine perovskite solar cell and preparation method thereof | |
| CN116284783B (en) | Perovskite solar cell based on multifunctional copolymer/metal composite electrode and preparation method thereof | |
| CN111599925B (en) | Solar cell with dimethyl tin bis (formate) N-type semiconductor film as electron transport layer and preparation method thereof | |
| CN117042559A (en) | Efficient pure-phase formamidino perovskite solar cell and preparation method thereof | |
| CN117015285A (en) | Perovskite thin film, preparation method thereof and perovskite battery | |
| CN118591193A (en) | A perovskite solar cell and preparation method thereof | |
| CN117580377A (en) | Perovskite active layer, perovskite solar cell and preparation method of perovskite solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230724 Address after: 100036, Fuxing Road 23, Beijing, Haidian District Patentee after: HUANENG RENEWABLES Corp.,Ltd. Patentee after: HUANENG CLEAN ENERGY Research Institute Patentee after: Huaneng Group R&D Center Co., Ltd. Address before: 102209 building a, Huaneng talent innovation and entrepreneurship base, Beiqijia future science and Technology City, Changping District, Beijing Patentee before: HUANENG CLEAN ENERGY Research Institute Patentee before: HUANENG RENEWABLES Corp.,Ltd. |
|
| TR01 | Transfer of patent right |