CN118073239A - Multi-nozzle progressive silicon wafer cleaning device and cleaning method thereof - Google Patents

Abstract

The invention discloses a multi-nozzle progressive silicon wafer cleaning device and a cleaning method thereof, wherein the cleaning device comprises the following components: the device comprises a progressive multi-nozzle component, a cushion block, a positioning component, a fixing component and a rotary table component, wherein the fixing component is arranged at the center of the top of the rotary table component, the cushion block and the positioning component are sequentially arranged at the top of the rotary table component in an outward extending mode by taking the fixing component as the center, and the progressive multi-nozzle component is arranged above the rotary table component in a height-adjustable mode. The invention has the advantages of reasonable structure, adaptability to the use of silicon wafers with various specifications, capability of fully cleaning the surfaces of the wafers and improvement of the cleaning effect.

Description

Multi-nozzle progressive silicon wafer cleaning device and cleaning method thereof

Technical Field

The present invention relates to the technical field of semiconductor wafer cleaning equipment, and more specifically to a multi-nozzle progressive silicon wafer cleaning device and a cleaning method thereof.

Background technique

Wafer refers to the silicon wafer used to make silicon semiconductor circuits. Its raw material is silicon. After grinding, polishing and cutting, the silicon crystal rod is formed into silicon wafers, commonly known as silicon slices. The diameters of wafers are mainly: 4 inches (100mm), 6 inches (150mm), 8 inches (200mm), 12 inches (300mm), and now it has developed to 18 inches (450mm) specifications, but large-size wafers are mainly 12 inches.

Chemical mechanical polishing is the use of chemical corrosion and mechanical force to planarize silicon wafers or other substrate materials during processing.

After chemical mechanical polishing, nanoparticles, organic compounds, metal ions, etc. remain on the surface of the silicon wafer, so the surface of the silicon wafer needs to be cleaned.

At present, wafers are generally placed on a turntable, and the impurities on the upper and lower surfaces of the wafers are cleaned by an ultrasonic cleaning component. The ultrasonic cleaning component moves along the radial direction of the wafer to clean the rotating wafer. However, since the circumferences of the wafers at different radii are different, and the ultrasonic cleaning component and the wafer are running at a constant speed, the cleaning of the wafer surface is uneven and the cleaning effect is poor. Therefore, when the wafer specifications are larger, the cleaning effect of the wafer edge is worse.

Summary of the invention

In order to solve the above problems, the purpose of the present invention is to provide a multi-nozzle progressive silicon wafer cleaning device and a cleaning method thereof with a reasonable structure, adaptable to the use of silicon wafers of various specifications, ensuring sufficient cleaning of the surface of the wafer and improving the cleaning effect.

According to one aspect of the present invention, a multi-nozzle progressive silicon wafer cleaning device is provided, which includes: a progressive multi-nozzle component, a pad, a positioning component, a fixing component and a turntable component, the fixing component is arranged at the top center of the turntable component, the top of the turntable component is extended outward with the fixing component as the center, and the pad and the positioning component are arranged in sequence, and the progressive multi-nozzle component is arranged above the turntable component with adjustable height. The positioning component is used to ensure that the silicon wafer is coaxial with the turntable component, the fixing component is used to absorb the silicon wafer, and the progressive multi-nozzle component is used to clean the silicon wafer, and multiple nozzles ensure that the cleaning liquid and the pure water flow are diffused more toward the outer diameter of the wafer, so as to achieve a better cleaning effect.

In some embodiments, the progressive multi-nozzle component includes: a connection block and a rotating nozzle detachably mounted at the bottom of the connection block, wherein a plurality of rotating nozzles are provided, and the plurality of rotating nozzles are arranged in one row or multiple rows. By using a plurality of rotating nozzles and by making the rotating nozzles have a certain inclination angle toward the outer diameter of the wafer, it is possible to ensure that the cleaning liquid flow is more diffused toward the outer diameter of the wafer, thereby achieving a better cleaning effect.

In some embodiments, the rotating nozzle includes: a mounting portion, a rotating portion, and a sleeve nut, the top of the mounting portion is fixedly connected to the connection block, the top of the mounting portion is provided with a liquid inlet, the bottom of the mounting portion is provided with a spherical groove, the top of the rotating portion is provided with a spherical connection block and a nozzle, the liquid outlet passes through the spherical connection block and the nozzle, the spherical connection block is arranged in the spherical groove, and the sleeve nut confines the spherical connection block in the spherical groove. The rotating portion rotates in the mounting portion to adjust the angle of the liquid outlet, and the rotating portion is fixed by the sleeve nut.

In some embodiments, the connection block is provided with a plurality of mounting holes, the mounting holes are arranged in one or more rows, the top of the mounting portion is threadedly connected and fixed to the mounting holes, 2-6 rotating nozzles are provided, and the spacing between the central axes of two adjacent nozzles is 25mm-55mm. The nozzles are arranged at a fixed spacing to ensure that the surface of the silicon wafer is cleaned by the cleaning liquid or pure water sprayed out in multiple streams.

In some embodiments, the turntable component includes: a central turntable and a turntable arm, a fixed component is installed at the top center of the central turntable and the central turntable drives the fixed component to rotate together, a plurality of turntable arms are arranged on the side wall of the central turntable, and the turntable arms are arranged in a circular array with the central axis of the central turntable as the center. The silicon wafer, the pad and the positioning component are driven to rotate together through the central turntable.

In some embodiments, a positioning component is installed at one end of the turntable arm away from the center turntable, the positioning component includes: a positioning block and a moving part, the moving part drives the positioning block to approach or move away from the center turntable, and at least three groups of positioning components are provided. Only by using at least three groups of positioning components can the circular silicon wafer be positioned, thereby ensuring that the center of the silicon wafer is consistent with the center of the center turntable.

In some embodiments, the positioning block is installed on one side of the cushion block close to the central turntable, the top height of the cushion block is lower than the top height of the positioning block, and the inner side of the positioning block has a concave arc surface. The cushion block is used to assist in supporting the silicon wafer, and the positioning block with the concave arc surface is easy to contact the edge of the silicon wafer.

In some embodiments, the fixing member is a vacuum suction cup, and the positioning block and the cushion block are both made of nylon material. The nylon positioning block and the cushion block ensure that the part in contact with the silicon wafer is made of a relatively soft material to prevent scratches on the silicon wafer.

In some embodiments, the end of the liquid outlet away from the liquid inlet has an inward taper of 60°, the diameter of the liquid inlet is 12-15 mm, and the diameter of the end of the liquid outlet is 8-10 mm.

According to one aspect of the present invention, a cleaning method of a multi-nozzle progressive silicon wafer cleaning device is provided, comprising the following steps:

S1: Confirm the specifications of the silicon wafer to be cleaned;

S2: adjusting the angle of the rotating nozzle and the height relative to the silicon wafer;

S3: adjust and set the flow rate of the rotating nozzle;

S4: adjusting and setting the rotation speed of the central turntable;

S5: placing the silicon wafer to be cleaned on the central turntable;

S6: At least three groups of positioning components are retracted, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable;

S7: The fixing component absorbs the silicon wafer;

S8: At least three groups of positioning components move outward, and the cushion block drives the positioning block away from the center turntable;

S9: The central turntable rotates while the nozzle sprays the cleaning fluid;

S10: The nozzle sprays the cleaning liquid for 80-120 seconds and then switches to pure water cleaning;

S11: After the nozzle sprays pure water for 25-60 seconds, the central turntable stops rotating;

S12: removing the cleaned silicon wafer;

S13: placing the silicon wafer to be cleaned on the central turntable;

S14: Repeat the above steps S6-S13.

In some embodiments, the silicon wafer is 12 inches, the number of the rotating nozzles is 5, the height of the liquid outlet of the rotating nozzle from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

In some embodiments, the silicon wafer is 8 inches, the number of the rotating nozzles is 4, the height of the rotating nozzle from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

In some embodiments, the silicon wafer is 6 inches, the number of the rotating nozzles is 3, the height of the rotating nozzles from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

In some embodiments, the flow rate of the nozzle is 0.3-0.5 L/min, and the flow rate of the nozzle near the center of the silicon wafer is greater than the flow rate of the nozzle at the edge of the silicon wafer.

In some embodiments, adjusting the nozzle angle comprises the following steps:

S1: Loosen the outer sleeve nut.

S2: Move the nozzle to make the rotating spherical connecting block rotate in the spherical groove;

S3: setting the liquid outlet angle of the nozzle located at the edge of the silicon wafer to 80°-85°, and performing detection;

S4: making the liquid outlet angle of the nozzle located at the center of the silicon wafer 60°-65°, and testing;

S5: adjusting the position of the liquid outlet so that the points where the liquid lands on the silicon wafer are located in the same straight line or staggered into multiple straight lines;

S6: Tighten the outer shell nuts on all rotating nozzles.

In some embodiments, multiple groups of rotating nozzles may operate independently or together.

The present invention has the following advantages: reasonable structure, adaptability to the use of silicon wafers of various specifications, and can fully clean the surface of the wafer and improve the cleaning effect. The present invention ensures that the silicon wafer is coaxial with the turntable component through a positioning component, absorbs the silicon wafer through a fixing component, and cleans the silicon wafer using a progressive multi-nozzle component. Multiple nozzles ensure that the cleaning liquid and pure water flow are more diffused toward the outer diameter of the wafer, thereby achieving a better cleaning effect; the rotating part rotates in the mounting part to adjust the angle of the liquid outlet, and the rotating part is fixed by a sleeve nut; the nozzles are set at a fixed interval to ensure that the surface of the silicon wafer is cleaned by multiple sprays of cleaning liquid or pure water; the silicon wafer, the pad and the positioning component are driven to rotate together by the central turntable; the circular silicon wafer can be positioned by at least three groups of positioning components, thereby ensuring that the center of the silicon wafer is consistent with the center of the central turntable; the pad is used to facilitate auxiliary support of the silicon wafer, and the positioning block with an inner concave arc surface is used to facilitate contact with the edge of the silicon wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic structural diagram of a multi-nozzle progressive silicon wafer cleaning device according to the present invention;

FIG2 is a schematic structural diagram of a progressive multi-nozzle component of a multi-nozzle progressive silicon wafer cleaning device according to the present invention;

3 is a cross-sectional view of a progressive multi-nozzle component of a multi-nozzle progressive silicon wafer cleaning device according to the present invention;

4 is a schematic diagram of the installation of the pad, positioning component, fixing component and turntable component of the multi-nozzle progressive silicon wafer cleaning device of the present invention.

Detailed ways

The present invention is described in detail below in conjunction with the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present invention, and equivalent changes or substitutions in functions, methods or structures made by ordinary technicians in the field based on these embodiments are all within the scope of protection of the present invention.

In the description of the present invention, it should be noted that, unless otherwise specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal connection of two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meaning of the terms can be understood according to the specific circumstances.

As shown in FIG1 , the multi-nozzle progressive silicon wafer cleaning device of the present invention comprises: a progressive multi-nozzle component 1, a cushion block 2, a positioning component 3, a fixing component 4 and a turntable component 5. The fixing component 4 is arranged at the top center of the turntable component 5. The cushion block 2 and the positioning component 3 are arranged in sequence on the top of the turntable component 5 extending outward from the fixing component 4. The progressive multi-nozzle component 1 is arranged above the turntable component 5 with an adjustable height. The silicon wafer is ensured to be coaxial with the turntable component 5 by the positioning component 3, the silicon wafer is adsorbed by the fixing component 4, and the silicon wafer is cleaned by the progressive multi-nozzle component 1. The multiple nozzles 126 ensure that the cleaning liquid and the pure water flow are diffused more toward the outer diameter of the wafer, thereby achieving a better cleaning effect.

By installing the progressive multi-nozzle component 1 on a lifting bracket, the distance between the multiple nozzles 126 and the silicon wafer can be controlled and adjusted.

As shown in Figures 2 and 3, the progressive multi-nozzle component 1 includes: a connection block 11 and a rotating nozzle 12 detachably mounted at the bottom of the connection block 11. A plurality of rotating nozzles 12 are provided, and the plurality of rotating nozzles 12 are arranged in one row or multiple rows. By using a plurality of rotating nozzles 12 and by making the rotating nozzles 12 have a certain inclination angle toward the outer diameter of the wafer, it is possible to ensure that the cleaning liquid flow is more diffused toward the outer diameter of the wafer, thereby achieving a better cleaning effect.

The rotating nozzle 12 comprises: a mounting portion 121, a rotating portion 122 and a sleeve nut 123. The top of the mounting portion 121 is fixedly connected to the connecting block 11. The top of the mounting portion 121 is provided with a liquid inlet 124. The bottom of the mounting portion 121 is provided with a spherical groove 125. The top of the rotating portion 122 is provided with a spherical connecting block 127 and a nozzle 126. The liquid outlet 128 penetrates the spherical connecting block 127 and the nozzle 126. The spherical connecting block 127 is arranged in the spherical groove 125. The sleeve nut 123 confines the spherical connecting block 127 in the spherical groove 125. The rotating portion 122 rotates in the mounting portion 121 to adjust the angle of the liquid outlet 128. The rotating portion 122 is fixed by the sleeve nut 123.

The liquid inlet 124 at the top of the mounting portion 121 is connected to the cleaning liquid storage tank and/or the pure water storage tank through a pipeline. Under the action of the liquid circuit control system, the silicon wafer is ultrasonically cleaned. When the liquid flows into the liquid inlet 124 under pressure, it will flow into the spherical groove 125 along the liquid inlet 124, and then flow into the pipeline of the liquid outlet 128 from the top of the liquid outlet 128, until it is sprayed onto the silicon wafer from the end of the liquid outlet 128. The spherical connection block 127 is a line seal before the outer sleeve nut 123 is tightened. After the tightening torque is applied, the spherical connection block 127 undergoes elastic-plastic deformation at the contact point, so that an annular sealing surface is formed between the spherical connection block 127 and the contact line. The spherical sealing structure can be pre-tightened through a threaded connection to achieve a sealing effect.

In the specific implementation process, multiple rotating nozzles 12 are arranged in a row, because the rotating part 122 will drive the end of the liquid outlet 128 to rotate at multiple angles, so the landing point of the cleaning liquid or pure water on the silicon wafer can be adjusted by the angle of the end of the liquid outlet 128, because when the landing point needs to form a straight line or two straight lines, it can be achieved by rotating the rotating part 122. Of course, in some extreme environments, such as when there are installation space limitations, multiple rotating nozzles 12 are arranged in two or more rows.

The connection block 11 is provided with a plurality of mounting holes 111, which are arranged in one or more rows, the top of the mounting portion 121 is threadedly connected and fixed to the mounting holes 111, and the rotating nozzle 12 is provided with 2-6 and the spacing between the central axes of two adjacent nozzles 126 is 25mm-55mm. The nozzles 126 are arranged at a fixed spacing to ensure that the surface of the silicon wafer is progressively cleaned by the cleaning liquid or pure water sprayed out by multiple streams.

During the implementation process, it was tested that the flushing distance of the progressive multi-nozzle component 1 needs to be greater than the radius of the silicon wafer. The nozzle 126 closest to the center of the silicon wafer starts spraying liquid first, and then sprays liquid progressively from the center to the outer end of the wafer. In this way, the water flow can spread from the center of the wafer to the outer end of the wafer, and the cleaning is more comprehensive. Residues such as metal ions remaining on the surface can be removed to the maximum extent.

As shown in FIG4 , the turntable component 5 includes: a central turntable 51 and a turntable arm 52. The fixing component 4 is installed at the top center of the central turntable 51 and the central turntable 51 drives the fixing component 4 to rotate together. A plurality of turntable arms 52 are arranged on the side wall of the central turntable 51. The turntable arms 52 are arranged in a circular array with the central axis of the central turntable 51 as the center. The central turntable 51 drives the silicon wafer, the pad 2 and the positioning component 3 to rotate together.

The end of the turntable arm 52 away from the center turntable 51 is equipped with a positioning component 3, which includes a positioning block 31 and a moving part 32. The moving part 32 drives the pad 2 to approach or move away from the center turntable 51. There are at least three groups of positioning components 3. Only by using at least three groups of positioning components 3 can the circular silicon wafer be positioned, thereby ensuring that the center of the silicon wafer is consistent with the center of the center turntable 51. When installing the wafer, the positioning block 31 is electrically moved toward the center of the turntable to assist in positioning the wafer. After positioning, the positioning is again electrically moved away from the center of the turntable so as not to affect the rotation and cleaning of the wafer.

The pad 2 is installed on the turntable arm 52 on one side close to the center turntable 51. The top height of the pad 2 is lower than the top height of the positioning block 31. The inner side of the positioning block 31 has a concave arc surface. The pad 2 is used to support the silicon wafer, and the positioning block 31 with the concave arc surface is convenient for contacting the edge of the silicon wafer. The pad 2 can mainly play an auxiliary supporting role, which can reduce the slight shaking of large-sized wafers under high-speed rotation. There is a positioning block 31 above the pad 2, which can play an auxiliary positioning role, so that the center of the wafer and the center of the turntable coincide more accurately.

The fixing part 4 is a vacuum suction cup, and the positioning block 31 and the cushion block 2 are both made of nylon. The positioning block 31 and the cushion block 2 made of nylon ensure that the part in contact with the silicon wafer is a relatively soft material, and the silicon wafer is scratched when placed.

One end of the liquid outlet 128 away from the liquid inlet 124 has an inward taper of 60°. The diameter of the liquid inlet 124 is 12-15 mm, and the diameter of the end of the liquid outlet 128 is 8-10 mm.

According to one aspect of the present invention, a cleaning method of a multi-nozzle 126 progressive silicon wafer cleaning device is provided, comprising the following steps:

S1: Confirm the specifications of the silicon wafer to be cleaned;

S2: Adjust the angle of the rotating nozzle 12 and its height relative to the silicon wafer;

S3: adjusting and setting the flow rate of the rotating nozzle 12;

S4: adjusting and setting the rotation speed of the central turntable 51;

S5: placing the silicon wafer to be cleaned on the central turntable 51;

S6: At least three groups of positioning components 3 are contracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

S7: the fixing component 4 absorbs the silicon wafer;

S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

S10: The nozzle 126 sprays the cleaning liquid for 80-120 seconds and then switches to pure water cleaning;

S11: After the nozzle 126 sprays pure water for 25-60 seconds, the central turntable 51 stops rotating;

S12: removing the cleaned silicon wafer;

S13: placing the silicon wafer to be cleaned on the central turntable 51;

S14: Repeat the above steps S6-S13.

The silicon wafer is 12 inches, the number of the rotating nozzles 12 is 5, the height of the liquid outlet 128 of the rotating nozzle 12 is 60-80 mm from the silicon wafer, the rotation speed of the central turntable 51 is 600-800 RPM, the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer is 60°-65°, the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer is 80°-85°, and the angle of the liquid outlet 128 of the nozzle 126 located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

The silicon wafer is 8 inches, the number of the rotating nozzles 12 is 4, the height of the rotating nozzle 12 from the silicon wafer is 60-80 mm, the rotation speed of the central turntable 51 is 600-800 RPM, the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer is 60°-65°, the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer is 80°-85°, and the angle of the liquid outlet 128 of the nozzle 126 located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

The silicon wafer is 6 inches, the number of the rotating nozzles 12 is 3, the height of the rotating nozzle 12 from the silicon wafer is 60-80 mm, the rotation speed of the central turntable 51 is 600-800 RPM, the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer is 60°-65°, the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer is 80°-85°, and the angle of the liquid outlet 128 of the nozzle 126 located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

The flow rate of the nozzle 126 is 0.3-0.5 L/min, and the flow rate of the nozzle 126 close to the center of the silicon wafer is greater than the flow rate of the nozzle 126 at the edge of the silicon wafer.

Adjustment of the angle of the nozzle 126 includes the following steps:

S1: Loosen the outer sleeve nut 123,

S2: Move the nozzle to make the rotating spherical connecting block 127 rotate in the spherical groove 125;

S3: Make the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer at an angle of 80°-85°, and perform detection;

S4: Make the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer at an angle of 60°-65°, and perform detection;

S5: adjusting the position of the liquid outlet 128 so that the points where the liquid lands on the silicon wafer are located in the same straight line or staggered into multiple straight lines;

S6: Tighten the outer sleeve nuts 123 on all rotating nozzles.

The plurality of groups of rotating nozzles 12 may operate independently or together.

In the specific implementation process, the nozzle 126 closest to the center of the silicon wafer starts spraying liquid first, and then starts spraying liquid progressively from the center to the outer end of the silicon wafer, so that the water flow can spread from the center of the wafer to the outer end of the wafer, the cleaning is more comprehensive, and the metal ions and other residues remaining on the surface can be removed to the maximum extent. The time interval for opening the nozzles 126 in sequence is 3-5s.

Embodiment 1

For cleaning of 12-inch silicon wafers, 125 rotating nozzles are arranged on the connection block 11, and the spacing between each rotating nozzle is 30 mm. When cleaning, the following steps are performed:

S1: Confirm 12-inch silicon wafer;

S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 80 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the three liquid outlets 128 in the middle are: 66°, 72° and 77° respectively; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is in the same straight line; lock the outer sleeve nuts 123 on all rotating nozzles;

S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L/min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L/min, and the flow rates of the three nozzles 126 in the middle are: 0.45 L/min, 0.4 L/min and 0.35 L/min;

S4: adjusting and setting the rotation speed of the central turntable 51 to 600 RPM;

S5: placing the silicon wafer to be cleaned on the central turntable 51;

S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

S7: the fixing component 4 absorbs the silicon wafer;

S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

S10: The nozzle 126 sprays the cleaning liquid for 120 seconds and then switches to pure water cleaning;

S11: After the nozzle 126 sprays pure water for 60 seconds, the central turntable 51 stops rotating;

S12: removing the cleaned silicon wafer;

S13: Place the silicon wafer to be cleaned on the central turntable 51

S14: Repeat the above steps S6-S13.

Embodiment 2

For cleaning of 12-inch silicon wafers, 10 rotating nozzles 12 are arranged on the connection block 11, and the spacing between each rotating nozzle is 15 mm. Five rotating nozzles 12 form a group, one group is connected to the cleaning liquid, and the other group is connected to pure water. When cleaning, follow the following steps:

S1: Confirm 12-inch silicon wafer;

S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 80 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the two nozzles 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the two nozzles 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the six liquid outlets 128 in the middle are set to 66°, 72° and 77° in pairs; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is located in two straight lines; lock the outer sleeve nuts 123 on all rotating nozzles;

S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L/min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L/min, and the flow rates of the three nozzles 126 in the middle are: 0.45 L/min, 0.4 L/min and 0.35 L/min;

S4: adjusting and setting the rotation speed of the central turntable 51 to 600 RPM;

S5: placing the silicon wafer to be cleaned on the central turntable 51;

S6: At least three groups of positioning components 3 are contracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

S7: the fixing component 4 absorbs the silicon wafer;

S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

S10: The nozzle 126 sprays the cleaning liquid for 120 seconds and then switches to pure water cleaning;

S11: After the nozzle 126 sprays pure water for 60 seconds, the central turntable 51 stops rotating;

S12: removing the cleaned silicon wafer;

S13: placing the silicon wafer to be cleaned on the central turntable 51;

S14: Repeat the above steps S6-S13.

Embodiment 3

For cleaning of 8-inch silicon wafers, four rotating nozzles 12 are arranged on the connection block 11, and the spacing between each rotating nozzle is 25 mm. When cleaning, the following steps are performed:

S1: Confirm 8-inch silicon wafer;

S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 70 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the two middle liquid outlets 128 are: 68.5° and 77° respectively; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is in the same straight line; lock the outer sleeve nuts 123 on all rotating nozzles;

S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L/min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L/min, and the flow rates of the two nozzles 126 in the middle are: 0.43 L/min and 0.37 L/min;

S4: adjusting and setting the rotation speed of the central turntable 51 to 700 RPM;

S5: placing the silicon wafer to be cleaned on the central turntable 51;

S6: At least three groups of positioning components 3 are contracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

S7: the fixing component 4 absorbs the silicon wafer;

S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

S10: The nozzle 126 sprays the cleaning liquid for 100 seconds and then switches to pure water cleaning;

S11: After the nozzle 126 sprays pure water for 50 seconds, the central turntable 51 stops rotating;

S12: removing the cleaned silicon wafer;

S13: placing the silicon wafer to be cleaned on the central turntable 51;

S14: Repeat the above steps S6-S13.

Embodiment 4

For cleaning of a 6-inch silicon wafer, six rotating nozzles 12 are arranged on the connection block 11, and the spacing between each rotating nozzle is 30 mm. When cleaning, the following steps are performed:

S1: Confirm 6-inch silicon wafer;

S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 60 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the four liquid outlets 128 in the middle are: 65°, 70°, 75° and 77° respectively; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is in the same straight line; lock the outer sleeve nuts 123 on all rotating nozzles;

S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L/min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L/min, and the flow rates of the four nozzles 126 in the middle are: 0.46 L/min, 0.42 L/min, 0.38 L/min and 0.34 L/min;

S4: adjusting and setting the rotation speed of the central turntable 51 to 800 RPM;

S5: placing the silicon wafer to be cleaned on the central turntable 51;

S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

S7: the fixing component 4 absorbs the silicon wafer;

S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

S9: The central turntable 51 rotates while the nozzles 126 spray cleaning liquid, and the center, edge and middle nozzles 126 are turned on and operated;

S10: The nozzle 126 sprays the cleaning liquid for 90 seconds and then switches to pure water cleaning;

S11: After the nozzle 126 sprays pure water for 40 seconds, the central turntable 51 stops rotating;

S12: removing the cleaned silicon wafer;

S13: placing the silicon wafer to be cleaned on the central turntable 51;

S14: Repeat the above steps S6-S13.

It can be seen from this that after the number of rotating nozzles 12 provided on the connecting block 11 is increased, various types of silicon wafers can be taken into account, and it is only necessary to control different rotating nozzles 12 to work.

The above are only some embodiments of the present invention. It should be pointed out that for ordinary technicians in this field, other modifications and improvements can be made without departing from the creative concept of the present invention, which all belong to the protection scope of the present invention.

Claims (16)

1. Multi-nozzle progressive silicon wafer cleaning device, its characterized in that includes: the automatic rotary table comprises a progressive multi-nozzle component, a cushion block, a positioning component, a fixing component and a rotary table component, wherein the fixing component is arranged at the center of the top of the rotary table component, the cushion block and the positioning component are sequentially arranged at the top of the rotary table component in an outward extending mode by taking the fixing component as the center, and the progressive multi-nozzle component is arranged above the rotary table component in a height-adjustable mode.

2. The multi-nozzle progressive silicon wafer cleaning apparatus of claim 1, wherein the progressive multi-nozzle assembly comprises: the rotary nozzles are arranged at the bottom of the connecting block, and a plurality of rotary nozzles are arranged in one row or a plurality of rows.

3. The multi-nozzle progressive silicon wafer cleaning apparatus of claim 2, wherein the rotating nozzle comprises: the device comprises a mounting part, a rotating part and a sleeve nut, wherein the top end of the mounting part is fixedly connected with a connecting block, the top end of the mounting part is provided with a liquid inlet, the bottom of the mounting part is provided with a spherical groove, the top of the rotating part is provided with a spherical connecting block and a nozzle, the liquid outlet penetrates through the spherical connecting block and the nozzle, the spherical connecting block is arranged in the spherical groove, and the sleeve nut limits the spherical connecting block in the spherical groove.

4. A multi-nozzle progressive silicon wafer cleaning device according to claim 3, wherein a plurality of mounting holes are formed in the connecting block, the mounting holes are arranged in one or more rows, the top of the mounting part is fixedly connected with the mounting holes in a threaded manner, 2-6 rotating nozzles are arranged, and the distance between two adjacent central axes of the nozzles is 25-55 mm.

5. A multi-nozzle progressive silicon wafer cleaning apparatus as recited in any one of claims 1-4, wherein the turntable assembly comprises: the turntable comprises a central turntable and turntable arms, wherein a fixing part is arranged at the center of the top of the central turntable and drives the fixing part to rotate together, a plurality of turntable arms are arranged on the side wall of the central turntable, and a plurality of turntable arms are distributed in an annular array with the center shaft of the central turntable as the center.

6. The multi-nozzle progressive silicon wafer cleaning apparatus of claim 5, wherein the turntable arm has a positioning member mounted at an end thereof remote from the central turntable, the positioning member comprising: the positioning device comprises a positioning block and a moving part, wherein the moving part drives the positioning block to be close to or far away from a central turntable, and at least three groups of positioning parts are arranged.

7. The multi-nozzle progressive silicon wafer cleaning device according to claim 6, wherein the positioning block is mounted on one side of the cushion block close to the central turntable, the top of the cushion block is lower than the top of the positioning block, and the inner side of the positioning block is provided with an inward concave arc surface.

8. The multi-nozzle progressive silicon wafer cleaning device of claim 7, wherein the fixing component is a vacuum chuck, and the positioning block and the cushion block are made of nylon materials.

9. The multi-nozzle progressive silicon wafer cleaning device according to claim 4, wherein one end of the liquid outlet far away from the liquid inlet is provided with an inward shrinking taper, the taper is a conical pipe with 60 degrees, the pipe diameter of the liquid inlet is 12-15mm, and the pipe diameter of the tail end of the liquid outlet is 8-10mm.

10. A method of cleaning a silicon wafer using the apparatus of claim 8, comprising the steps of:

s1: confirming the specification of the silicon wafer to be cleaned;

S2: adjusting the angle of the rotary nozzle and the height of the rotary nozzle and the silicon wafer;

S3: adjusting the flow rate of the rotating nozzle;

s4: adjusting and setting the rotating speed of the central turntable;

s5: placing a silicon wafer to be cleaned to a central turntable;

S6: at least three groups of positioning parts shrink, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable;

S7: the fixing component adsorbs the silicon wafer;

s8, at least three groups of positioning parts move outwards, and the cushion blocks drive the positioning blocks to be far away from the central turntable;

S9: the central turntable rotates and the nozzle sprays cleaning liquid;

s10: after the nozzle sprays cleaning liquid for 80-120s, pure water is switched for cleaning;

s11: after spraying pure water for 25-60s, stopping the rotation of the central turntable;

S12: removing the silicon wafer after the cleaning is completed;

s13: placing a silicon wafer to be cleaned to a central turntable;

s14: repeating the steps S6-S13.

11. The method of claim 10 wherein the wafer is 12 inches, the number of rotating nozzles is 5, the height of the outlet of the rotating nozzles from the wafer is 60-80mm, the rotational speed of the central turntable is 600-800RPM, the outlet angle of the nozzles at the center of the wafer is 60 ° -65 °, the outlet angle of the nozzles at the edge of the wafer is 80 ° -85 °, the outlet angle of the nozzles at the middle of the wafer increases in an arithmetic progression from 60 ° -65 ° to 80 ° -85 °.

12. The method of claim 10 wherein the wafer is 8 inches, the number of rotating nozzles is 4, the height of the rotating nozzles from the wafer is 60-80mm, the rotational speed of the central turntable is 600-800RPM, the exit angle of the nozzle at the center of the wafer is 60 ° -65 °, the exit angle of the nozzle at the edge of the wafer is 80 ° -85 °, the exit angle of the nozzle at the middle of the wafer increases in an arithmetic progression from 60 ° -65 ° to 80 ° -85 °.

13. The method of claim 10 wherein the wafer is 6 inches, the number of rotating nozzles is 3, the height of the rotating nozzles from the wafer is 60-80mm, the rotational speed of the central turntable is 600-800RPM, the exit angle of the nozzle at the center of the wafer is 60 ° -65 °, the exit angle of the nozzle at the edge of the wafer is 80 ° -85 °, the exit angle of the nozzle at the middle of the wafer increases in an arithmetic progression from 60 ° -65 ° to 80 ° -85 °.

14. The method of any of claims 11-13 wherein the flow rate of the nozzles is 0.3-0.5L/min and the flow rate of the nozzles near the center of the wafer is greater than the flow rate of the nozzles at the edge of the wafer.

15. The method of claim 10, wherein the adjustment of the nozzle angle comprises the steps of:

S1: the outer sleeve nut is loosened so that the outer sleeve nut is not in contact with the outer sleeve nut,

S2: the spray head is broken off, so that the rotary spherical connecting block rotates in the spherical groove;

S3: enabling the liquid outlet angle of a nozzle positioned at the edge of the silicon wafer to be 80-85 degrees, and detecting;

S4: enabling the liquid outlet angle of a nozzle positioned in the center of the silicon wafer to be 60-65 degrees, and detecting;

S5: adjusting the position of the liquid outlet to enable the falling points of the liquid on the silicon wafer to be positioned on the same straight line or staggered into a plurality of straight lines;

s6: and locking the outer nuts on all the rotary spray heads.

16. A method according to any one of claims 10-13, wherein a plurality of said rotating nozzles may be operated individually or together.