CN118280884B - Semiconductor wafer cleaning device and cleaning method thereof - Google Patents
Semiconductor wafer cleaning device and cleaning method thereof Download PDFInfo
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- CN118280884B CN118280884B CN202410400392.4A CN202410400392A CN118280884B CN 118280884 B CN118280884 B CN 118280884B CN 202410400392 A CN202410400392 A CN 202410400392A CN 118280884 B CN118280884 B CN 118280884B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a semiconductor wafer cleaning device, which comprises: the rotary nozzle component, the cushion block, the positioning component, the fixing component, the rotary table component, the upper cover and the lower cover are correspondingly arranged, the rotary table component is arranged at the bottom of the upper cover, the fixing component is arranged at the center of the bottom of the rotary table component, the cushion block and the positioning component are sequentially arranged at the bottom of the rotary table component in an outward extending manner by taking the fixing component as the center, the invention provides a semiconductor wafer cleaning device and a cleaning method thereof, wherein a rotary nozzle component is arranged below a turntable component and is arranged in a lower cover.
Description
Technical Field
The invention relates to the technical field of semiconductor wafer cleaning equipment, in particular to a semiconductor wafer cleaning device and a cleaning method thereof.
Background
The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor circuit, the original material of the wafer is silicon, and a silicon crystal bar is ground, polished and cut to form the silicon wafer, which is commonly called a silicon wafer. Wafers are the most critical materials in the fabrication of semiconductor integrated circuits and in the case of precision devices, an ultra high surface quality is required. Chemical mechanical polishing is a process of planarizing a surface of a wafer during processing using chemical etching and mechanical forces. After chemical mechanical polishing, nanoparticles, organic compounds, metal ions, etc. remain on the surface of the wafer, and therefore the surface of the wafer needs to be cleaned.
At present, a wafer is generally placed on a turntable, impurities on the upper surface and the lower surface of the wafer are cleaned through an ultrasonic cleaning assembly, the ultrasonic cleaning assembly moves along the radial direction of the wafer to clean the rotating wafer, so that more cleaning liquid is consumed in cleaning, the cost is high, and the cleaning effect is not ideal.
Meanwhile, the inspection of the wafer finished product after cleaning finds that: some wafers develop scratches on the surface after cleaning. The cause of the scratch on the surface of the wafer is verified and analyzed, and the wafer is considered to be: because the cleaning nozzle is arranged above the wafer, the wear debris caused by long-time use of the spray head falls off to cause surface damage to the wafer.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a semiconductor wafer cleaning apparatus and a cleaning method thereof, which can sufficiently clean the surface of a wafer by optimizing a cleaning solution spray path and a flow rate, and can achieve the highest utilization of the cleaning solution, thereby realizing clean, environment-friendly and low-cost cleaning technology in the cleaning process.
According to an aspect of the present invention, there is provided a semiconductor wafer cleaning apparatus comprising: the rotary nozzle comprises a rotary nozzle component, a cushion block, a positioning component, a fixing component, a rotary table component, an upper cover and a lower cover, wherein the upper cover and the lower cover are correspondingly arranged, the rotary table component is arranged at the bottom of the upper cover, the fixing component is arranged at the center of the bottom of the rotary table component, the cushion block and the positioning component are sequentially arranged at the bottom of the rotary table component in an outward extending mode by taking the fixing component as the center, the rotary nozzle component is arranged below the rotary table component, and the rotary nozzle component is arranged in the lower cover. The wafer is cleaned from bottom to top by clamping the wafer from the bottom using the rotating nozzle assembly.
In some embodiments, the rotary nozzle component comprises: the adjustable rotary type spray head comprises an adjustable rotary type spray head, a liquid inlet component and an air inlet component, wherein the liquid inlet component and the air inlet component are both arranged at the bottom of the adjustable rotary type spray head, one end of the liquid inlet component is connected with the adjustable rotary type spray head, the other end of the liquid inlet component is connected with a liquid storage device, and one end of the air inlet component is connected with the adjustable rotary type spray head, and the other end of the air inlet component is connected with an air pump device. The liquid inlet component is used for providing cleaning liquid or pure water for the adjustable rotary spray head, and the air inlet component is used for rotationally driving the adjustable rotary spray head.
In some embodiments, an adjustable rotary spray head includes: the device comprises a base, a shell, a rotating arm and a nozzle, wherein a spacer is vertically arranged at the center of the top of the base and divides a communicating pipe into a liquid inlet cavity and a gas inlet cavity, the base is provided with a liquid inlet communicated with the liquid inlet cavity, and the base is provided with a gas inlet communicated with the gas inlet cavity;
the liquid inlet is communicated with the liquid inlet component;
The air inlet is communicated with the air inlet component. The shell is driven by the air inlet, so that the rotating arm and the nozzle arranged on the rotating arm are driven to rotate, an annular cleaning path is realized, and cleaning liquid is input to the nozzle through the liquid inlet, so that the wafer is conveniently cleaned.
In some embodiments, the shell is connected with the outer wall of the communicating pipe through a bearing, at least one exhaust hole is arranged on the shell, a first communicating hole is arranged at the top of the air inlet cavity, the first communicating hole is communicated with the spacer ring, and an annular air passage is arranged in the spacer ring and is communicated with the exhaust hole and the first communicating hole. The annular air passage in the space ring is communicated with the air inlet cavity, so that the shell is driven to rotate on the outer wall of the connecting pipe by compressed gas.
In some embodiments, the outer wall of the exhaust hole is provided with an air tap communicated with the exhaust hole, and the axial direction of the air tap is perpendicular to the axial direction of the exhaust hole. Through the axial of air cock and the axial perpendicular setting of exhaust hole, the moment of couple direct drive casing that is convenient for make gas formation rotates, and is more simple reliable.
In some embodiments, at least two outward extending rotating arms are arranged at the top of the shell, a transfusion tube is arranged in the rotating arms, the transfusion tube is communicated with the liquid inlet cavity, the axial direction of the transfusion tube is vertical to the axial direction of the liquid inlet cavity, a plug is arranged at the top of the liquid inlet cavity, and the plug seals the top of the liquid inlet cavity. The liquid inlet cavity is communicated with the infusion tube, so that the wafer is conveniently cleaned by cleaning liquid or pure water from bottom to top.
In some embodiments, the end of the infusion tube is provided with a second communication hole, the nozzle is arranged in the second communication hole, the axial direction of the nozzle is parallel to the liquid inlet cavity, and the nozzle is perpendicular to the fixing part.
In some embodiments, two nozzles are provided, and the nozzles are symmetrically arranged with the central axis of the communicating pipe as a center.
In some embodiments, the nozzles are provided in at least two, the nozzles being at the same distance from the central axis of the communicating tube.
In some embodiments, the liquid inlet assembly comprises: the first connector is communicated with the liquid inlet and the first connecting pipe, and the first regulating valve is connected with the first connecting pipe and the liquid inlet;
The air inlet assembly includes: the second joint, second connecting pipe, second governing valve and intake pipe, second joint intercommunication air inlet and second connecting pipe, second governing valve connect second connecting pipe and intake pipe. The first regulating valve and the second regulating valve are utilized to facilitate the adjustment of the rotating speed of the shell and the flow rate of the nozzle liquid.
In some embodiments, the center of the lower housing is provided with a drain. The liquid discharge port is utilized to collect the cleaning liquid conveniently, and then the cleaning liquid is treated for recycling.
According to an aspect of the present invention, there is provided a cleaning method of a semiconductor wafer cleaning apparatus, comprising the steps of:
s1: confirming the specification of the silicon wafer to be cleaned;
S2: adjusting the flow speed and the rotating speed of the rotating nozzle component;
S3: adjusting the rotating speed of the central turntable;
s4: placing a silicon wafer to be cleaned to a central turntable;
S5: at least three groups of positioning parts shrink, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable;
s6: the fixing component adsorbs the silicon wafer;
s7: the central turntable is moved to a cleaning position;
s8, at least three groups of positioning parts move outwards, and the cushion blocks drive the positioning blocks to be far away from the central turntable;
S9: starting the cleaning device, driving the spray rotation by the air nozzle, and spraying cleaning liquid by the nozzle; simultaneously, the central turntable starts to rotate;
s10: after the nozzle sprays cleaning liquid for 80-120s, pure water is switched for cleaning;
s11: after spraying pure water for 25-60s, the central turntable stops rotating, and the air tap and the nozzle stop running;
s12: resetting the central turntable, stopping adsorbing the wafer, and removing the cleaned silicon wafer;
S13: placing a silicon wafer to be cleaned to a central turntable;
S14: repeating the steps S5-S12.
Compared with the prior art, the invention has the beneficial effects of cleanness, environmental protection and low cost in the cleaning process; the wafer is clamped from the bottom, and the wafer is cleaned from bottom to top by utilizing a rotary nozzle component; the liquid inlet component is used for providing cleaning liquid or pure water for the adjustable rotary spray head, and the air inlet component is used for rotationally driving the adjustable rotary spray head; the shell is driven by the air inlet, so that the rotating arm and the nozzle arranged on the rotating arm are driven to rotate, an annular cleaning path is realized, and cleaning liquid is input into the nozzle through the liquid inlet, so that the wafer is conveniently cleaned; the annular air passage in the space ring is communicated with the air inlet cavity, so that the compressed air is used for driving the shell to rotate on the outer wall of the connecting pipe, and the axial direction of the air tap is perpendicular to the axial direction of the air outlet hole, so that the moment of couple formed by the air is convenient for directly driving the shell to rotate, and the device is simpler and more reliable; the liquid inlet cavity is communicated with the infusion tube, so that the wafer is conveniently cleaned by cleaning liquid or pure water from bottom to top; the first regulating valve and the second regulating valve are utilized to facilitate the adjustment of the rotating speed of the shell and the flow speed of the nozzle liquid; the liquid discharge port is utilized to collect the cleaning liquid conveniently, and then the cleaning liquid is treated for recycling.
Drawings
FIG. 1 is a schematic view of a semiconductor wafer cleaning apparatus according to the present invention;
FIG. 2 is a cross-sectional view of a semiconductor wafer cleaning apparatus of the present invention;
FIG. 3 is a schematic view of the structure of a rotary nozzle member of the semiconductor wafer cleaning apparatus of the present invention;
FIG. 4 is a cross-sectional view of an adjustable spin head of the semiconductor wafer cleaning apparatus of the present invention;
FIG. 5 is a schematic view of a liquid inlet assembly of the semiconductor wafer cleaning apparatus of the present invention;
FIG. 6 is a schematic view of a cleaning path of a rotating nozzle member of the semiconductor wafer cleaning apparatus of the present invention;
FIG. 7 is a schematic view of one embodiment of a rotating nozzle assembly of the semiconductor wafer cleaning apparatus of the present invention;
FIG. 8 is a schematic view of one embodiment of a rotating nozzle assembly of the semiconductor wafer cleaning apparatus of the present invention;
fig. 9 is a schematic view of an embodiment of a rotating nozzle assembly of the semiconductor wafer cleaning apparatus of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the embodiments shown in the drawings, but it should be understood that the embodiments are not limited to the invention, and equivalent changes or substitutions of functions, methods or structures according to the embodiments by those skilled in the art are included in the scope of the present invention.
In the description of the present invention, it should be noted that, unless otherwise specified and defined, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, mechanically or electrically connected, may be in communication with each other between two elements, may be directly connected, or may be indirectly connected through an intermediate medium, and the specific meaning of the terms may be understood by those skilled in the art according to circumstances.
As shown in fig. 1 and 2, the semiconductor wafer cleaning apparatus according to the present invention includes: the rotary nozzle comprises a rotary nozzle component 1, a cushion block 2, a positioning component 3, a fixing component 4, a rotary table component 5, an upper cover 6 and a lower cover 7, wherein the upper cover 6 and the lower cover 7 are correspondingly arranged, the rotary table component 5 is arranged at the bottom of the upper cover 6, the fixing component 4 is arranged at the center of the bottom of the rotary table component 5, the cushion block 2 and the positioning component 3 are sequentially arranged at the bottom of the rotary table component 5 in an outward extending mode by taking the fixing component 4 as the center, the rotary nozzle component 1 is arranged below the rotary table component 5, and the rotary nozzle component 1 is arranged in the lower cover 7. By clamping the wafer from the bottom, the wafer is cleaned from the bottom up by the rotary nozzle member 1. The rotary nozzle component 1 is arranged below the wafer, and is driven to rotate by compressed air, so that the phenomenon that the abrasion micro-dust caused by long-time use of the spray head falls down to cause surface damage to the wafer can be avoided, and the wafer cleaning is further improved by normal abrasion under consideration of the service life of mechanical parts.
As shown in fig. 3, the rotary nozzle member 1 includes: the adjustable rotary sprayer comprises an adjustable rotary sprayer 11, a liquid inlet component 12 and an air inlet component 13, wherein the liquid inlet component 12 and the air inlet component 13 are both arranged at the bottom of the adjustable rotary sprayer 11, one end of the liquid inlet component 12 is connected with the adjustable rotary sprayer 11, the other end of the liquid inlet component is connected with a liquid storage device, and one end of the air inlet component 13 is connected with the adjustable rotary sprayer 11, and the other end of the air inlet component is connected with an air pump device. The liquid inlet component 12 supplies cleaning liquid or pure water to the adjustable rotary sprayer 11, and the air inlet component 13 is utilized to rotationally drive the adjustable rotary sprayer 11.
As shown in fig. 4, the adjustable rotary sprayer 11 includes: the base 1101, the shell 1102, the rotating arm 1103 and the nozzle 1104 are vertically arranged at the top center of the base 1101, the spacer 1106 divides the communicating pipe 1105 into a liquid inlet cavity 1107 and an air inlet cavity 1108, the base 1101 is provided with a liquid inlet 1109 communicated with the liquid inlet cavity 1107, and the base 1101 is provided with an air inlet 1110 communicated with the air inlet cavity 1108;
The liquid inlet 1109 is communicated with the liquid inlet assembly 12;
The intake 1110 communicates with the intake assembly 13. The shell 1102 is driven by the air inlet 1110, so that the rotating arm 1103 and the nozzle 1104 arranged on the rotating arm 1103 are driven to rotate, an annular cleaning path is realized, and cleaning liquid is input into the nozzle 1104 through the liquid inlet 1109, so that the wafer is cleaned conveniently.
The casing 1102 is connected with the outer wall of the communicating pipe 1105 through the bearing 1111, at least one exhaust hole 1112 is arranged on the casing 1102, a first communicating hole 1113 is arranged at the top of the air inlet cavity 1108, the first communicating hole 1113 is communicated with the spacer 1114, an annular air passage 1115 is arranged in the spacer 1114, and the annular air passage 1115 is communicated with the exhaust hole 1112 and the first communicating hole 1113. The annular air passage 1115 in the spacer 1114 is communicated with the air inlet cavity 1108, so that the shell 1102 is driven to rotate on the outer wall of the communicating pipe 1105 by compressed gas. Of course, the bearings 1111 are provided with 2 groups, and are arranged in parallel up and down, and the upper bearings 1111 are provided with check rings, which mainly play a role in fixing the bearings 1111. The spacer 1114 mainly serves to connect the first communication hole 1113 with the exhaust hole 1112 and to seal the same, thereby preventing damage to the bearing 1111 by liquid.
The outer wall of the exhaust hole 1112 is provided with an air tap 1116 communicated with the exhaust hole 1112, and the axial direction of the air tap 1116 is perpendicular to the axial direction of the exhaust hole 1112. Through the axial of air cock 1116 and the axial perpendicular setting of exhaust hole 1112, the couple moment that is convenient for make gas formation directly drives casing 1102 rotation, and is more simple reliable.
The top of casing 1102 is equipped with two at least outward extension's rocking arm 1103, is equipped with transfer line 1117 in the rocking arm 1103, transfer line 1117 and feed liquor chamber 1107 intercommunication, and the axial of transfer line 1117 is perpendicular with the axial of feed liquor chamber 1107, and the top of feed liquor chamber 1108 is equipped with the end cap 1118, and the end cap 1118 seals the top of feed liquor chamber 1108. The use of the fluid inlet chamber 1107 in communication with the fluid tube 1117 facilitates the bottom-up cleaning of the wafer with cleaning fluid or pure water.
The end of the transfer tube 1117 is provided with a second communication hole 1119, the nozzle 1104 is installed in the second communication hole 1119, the axial direction of the nozzle 1104 is parallel to the liquid inlet cavity 1107, and the nozzle 1104 is perpendicular to the fixing part 4.
The number of the nozzles 1104 is two, and the nozzles 1104 are symmetrically arranged with the central axis of the communicating pipe 1105 as the center.
The nozzles 1104 are provided in at least two, and the distances from the nozzles 1104 to the central axis of the communicating pipe 1105 are the same or different.
As shown in fig. 5, the intake assembly 12 includes: the first connector 121, the first connecting pipe 122, the first regulating valve 123 and the liquid inlet pipe 124, wherein the first connector 121 is communicated with the liquid inlet 1109 and the first connecting pipe 122, and the first regulating valve 123 is connected with the first connecting pipe 122 and the liquid inlet pipe 124;
The intake assembly 13 includes: the second joint 131, the second connection pipe 132, the second regulating valve 133 and the air intake pipe 134, the second joint 131 communicates the air intake 1110 and the second connection pipe 132, and the second regulating valve 133 connects the second connection pipe 132 and the air intake pipe 134. The use of the first and second regulator valves 123, 133 facilitates the adjustment of the rotational speed of the housing 1102 and the flow rate of the liquid from the nozzle 1104.
The center of the lower cover 7 is provided with a liquid outlet 8. The cleaning liquid is conveniently collected by the liquid outlet 8, and is further processed for recycling.
According to an aspect of the present invention, there is provided a cleaning method of a semiconductor wafer cleaning apparatus, comprising the steps of:
s1: confirming the specification of the silicon wafer to be cleaned;
S2: adjusting the flow speed and the rotating speed of the rotating nozzle component;
S3: adjusting the rotating speed of the central turntable;
s4: placing a silicon wafer to be cleaned to a central turntable;
S5: at least three groups of positioning parts shrink, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable;
s6: the fixing component adsorbs the silicon wafer;
s7: the central turntable is moved to a cleaning position;
s8, at least three groups of positioning parts move outwards, and the cushion blocks drive the positioning blocks to be far away from the central turntable;
S9: starting the cleaning device, driving the spray rotation by the air nozzle, and spraying cleaning liquid by the nozzle; simultaneously, the central turntable starts to rotate;
s10: after the nozzle sprays cleaning liquid for 80-120s, pure water is switched for cleaning;
s11: after spraying pure water for 25-60s, the central turntable stops rotating, and the air tap and the nozzle stop running;
s12: resetting the central turntable, stopping adsorbing the wafer, and removing the cleaned silicon wafer;
S13: placing a silicon wafer to be cleaned to a central turntable;
S14: repeating the steps S5-S12.
In the implementation process, the number of the rotating arms 1103 and the nozzles 1104 can be increased according to the wafer size so as to achieve better cleaning efficiency and cleaning effect.
Example 1
As shown in fig. 6 and 7, the nozzles 1104 are symmetrically arranged about the central axis of the communicating pipe 1105. a is the cleaning path of the rotating nozzle 1104, which covers the center of the wafer and extends beyond the outer diameter of the wafer. b is the wafer path. When the rotating nozzle 1104 rotates at ω1 and the wafer rotates at ω2, the cleaning path covers the entire wafer surface. In the cleaning process of the cleaning path, the cleaning fluid has an axial flow velocity and a tangential velocity of the rotary nozzle 1104, so that the cleaning fluid is overlapped with two velocities, the cleaning force is higher, and meanwhile, a better cleaning effect is achieved by using less cleaning fluid.
The comprehensive optimization of the flow rate of the cleaning liquid, the cleaning effect and the like is combined, the distance between the nozzle 1104 and the rotation center is about the radius of the wafer, the diameter of the cleaning liquid sprayed by the nozzle 1104 is D, the rotating speed of the rotating nozzle 1104 is omega 1, the rotating speed of the wafer is omega 2, the diameter of the wafer is D, when omega 1/omega 2=pi D/nd, the cleaning liquid can cover the whole wafer under the condition, and when omega 1/omega 2> pi D/nd, the excellent cleaning effect can be achieved. When n=2, the cleaning is insufficient due to the fact that the flow rate of the cleaning liquid is too low, the corrosion and stripping of the wafer due to the fact that the flow rate of the cleaning liquid is too high can be guaranteed, the cleaning liquid is greatly saved under the condition that the wafer is sufficiently cleaned, and the cleaning effect with low cost and high cleanliness can be achieved.
Example two
As shown in fig. 8, when three nozzles 1104 are provided, the distances from the three nozzles 1104 to the center axis of the communicating pipe 1105 are the same. a is the cleaning path of the rotating nozzle 1104, which covers the center of the wafer and extends beyond the outer diameter of the wafer. b is the wafer path. When the rotating nozzle 1104 rotates at ω1 and the wafer rotates at ω2, the cleaning path covers the entire wafer surface. In the cleaning process of the cleaning path, the cleaning fluid has an axial flow velocity and a tangential velocity of the rotary nozzle 1104, so that the cleaning fluid is overlapped with two velocities, the cleaning force is higher, and meanwhile, a better cleaning effect is achieved by using less cleaning fluid.
The comprehensive optimization of the flow rate of the cleaning liquid, the cleaning effect and the like is combined, the distance between the nozzle 1104 and the rotation center is about the radius of the wafer, the diameter of the cleaning liquid sprayed by the nozzle 1104 is D, the rotating speed of the rotating nozzle 1104 is omega 1, the rotating speed of the wafer is omega 2, the diameter of the wafer is D, when omega 1/omega 2=pi D/nd, the cleaning liquid can cover the whole wafer under the condition, and when omega 1/omega 2> pi D/nd, the excellent cleaning effect can be achieved. When n=3, the cleaning is insufficient due to the fact that the flow rate of the cleaning liquid is too low, the corrosion and stripping of the wafer due to the fact that the flow rate of the cleaning liquid is too high can be guaranteed, the cleaning liquid is greatly saved under the condition that the wafer is sufficiently cleaned, and the cleaning effect with low cost and high cleanliness can be achieved.
Example III
As shown in fig. 9, when four nozzles 1104 are provided, the distances from the four nozzles 1104 to the center axis of the communicating pipe 1105 are the same. a is the cleaning path of the rotating nozzle 1104, which covers the center of the wafer and extends beyond the outer diameter of the wafer. b is the wafer path. When the rotating nozzle 1104 rotates at ω1 and the wafer rotates at ω2, the cleaning path covers the entire wafer surface. In the cleaning process of the cleaning path, the cleaning fluid has an axial flow velocity and a tangential velocity of the rotary nozzle 1104, so that the cleaning fluid is overlapped with two velocities, the cleaning force is higher, and meanwhile, a better cleaning effect is achieved by using less cleaning fluid.
The comprehensive optimization of the flow rate of the cleaning liquid, the cleaning effect and the like is combined, the distance between the nozzle 1104 and the rotation center is about the radius of the wafer, the diameter of the cleaning liquid sprayed by the nozzle 1104 is D, the rotating speed of the rotating nozzle 1104 is omega 1, the rotating speed of the wafer is omega 2, the diameter of the wafer is D, when omega 1/omega 2=pi D/nd, the cleaning liquid can cover the whole wafer under the condition, and when omega 1/omega 2> pi D/nd, the excellent cleaning effect can be achieved. When n=4, the cleaning is insufficient due to the fact that the flow rate of the cleaning liquid is too low, the corrosion and stripping of the wafer due to the fact that the flow rate of the cleaning liquid is too high can be guaranteed, the cleaning liquid is greatly saved under the condition that the wafer is sufficiently cleaned, and the cleaning effect with low cost and high cleanliness can be achieved.
The flow rate of the nozzle 1104 during the setup is: 0.5-0.8m/s, the rotating speed is: 300-500rpm. From the above, it is understood that the rotational speed of the nozzle 1104 is reduced when the number of nozzles 1104 is increased, and thus the rotational speed needs to be appropriately reduced after the number of nozzles 1104 is increased. Further, in order to ensure that the rotation speed of the cleaning effect is not too low, 2-4 nozzles 1104 are arranged to achieve the optimal effect.
In a further test procedure, when two nozzles 1104 are provided, but the distances from the two nozzles 1104 to the center axis of the communicating pipe 1105 are different, because the wafer rotation center and the shower head rotation center are always fixed, two cleaning paths will appear if the two nozzles 1104 are asymmetric, wherein the cleaning path of the nozzle closer to the rotation center will always be within the cleaning path of the nozzle farther from the rotation center, that is, two concentric circles with the cleaning path being one larger and one smaller are formed, in this case, if the cleaning path with the smaller cleaning liquid radius is slightly larger than the wafer radius, a part of the cleaning liquid will be wasted in the cleaning procedure, and if the cleaning efficiency will be reduced and the usage amount of the cleaning liquid will be increased if the cleaning liquid with the larger cleaning liquid path radius is slightly larger than the wafer radius. The cleaning solution is optimal in that the distance from the at least two nozzles 1104 to the central axis of the communicating tube 1105 is the same and the cleaning paths coincide.
While only certain embodiments of the present invention have been described, it will be apparent to those skilled in the art that other modifications and improvements can be made without departing from the inventive concept of the present invention.
Claims (7)
1. Semiconductor wafer belt cleaning device, characterized by includes: the rotary nozzle component, the cushion block, the positioning component, the fixing component, the rotary table component, the upper cover and the lower cover are correspondingly arranged, the rotary table component is arranged at the bottom of the upper cover, the fixing component is arranged at the center of the bottom of the rotary table component, the cushion block and the positioning component are sequentially arranged at the bottom of the rotary table component in an outward extending mode by taking the fixing component as the center, the rotary nozzle component is arranged below the rotary table component, and the rotary nozzle component is arranged in the lower cover; the rotary nozzle member includes: the liquid inlet component and the air inlet component are both arranged at the bottom of the adjustable rotary spray head, one end of the liquid inlet component is connected with the adjustable rotary spray head, the other end of the liquid inlet component is connected with the liquid storage device, and one end of the air inlet component is connected with the adjustable rotary spray head, and the other end of the air inlet component is connected with the air pump device; the adjustable rotary sprayer includes: the device comprises a base, a shell, a rotating arm and a nozzle, wherein a spacer is vertically arranged at the center of the top of the base, the spacer divides a communicating pipe into a liquid inlet cavity and a gas inlet cavity, the base is provided with a liquid inlet communicated with the liquid inlet cavity, and the base is provided with a gas inlet communicated with the gas inlet cavity;
the liquid inlet is communicated with the liquid inlet component;
The air inlet is communicated with the air inlet component; the shell is connected with the outer wall of the communicating pipe through a bearing, at least one exhaust hole is formed in the shell, a first communicating hole is formed in the top of the air inlet cavity, the first communicating hole is communicated with the spacer ring, an annular air passage is formed in the spacer ring, and the annular air passage is communicated with the exhaust hole and the first communicating hole;
The two nozzles are symmetrically arranged by taking the central axis of the communicating pipe as the center;
the nozzle is provided with at least two nozzles, and the distances between the nozzles and the central axis of the communicating pipe are the same.
2. The semiconductor wafer cleaning device according to claim 1, wherein the outer wall of the exhaust hole is provided with an air tap communicated with the exhaust hole, and the axial direction of the air tap is perpendicular to the axial direction of the exhaust hole.
3. The semiconductor wafer cleaning device according to claim 2, wherein at least two outward extending rotating arms are arranged at the top of the shell, an infusion tube is arranged in each rotating arm, the infusion tube is communicated with the liquid inlet cavity, the axial direction of the infusion tube is perpendicular to the axial direction of the liquid inlet cavity, a plug is arranged at the top of the liquid inlet cavity, and the plug seals the top of the liquid inlet cavity.
4. The semiconductor wafer cleaning apparatus according to claim 3, wherein the end portion of the liquid supply pipe is provided with a second communication hole, the nozzle is installed in the second communication hole, the axial direction of the nozzle is parallel to the liquid supply chamber, and the nozzle is perpendicular to the fixing member.
5. The semiconductor wafer cleaning apparatus of claim 1, wherein the liquid feed assembly comprises: the device comprises a first connector, a first connecting pipe, a first regulating valve and a liquid inlet pipe, wherein the first connector is communicated with the liquid inlet and the first connecting pipe, and the first regulating valve is connected with the first connecting pipe and the liquid inlet pipe;
the air intake assembly includes: the second joint, second connecting pipe, second governing valve and intake pipe, second joint intercommunication air inlet and second connecting pipe, second governing valve connects second connecting pipe and intake pipe.
6. The semiconductor wafer cleaning apparatus according to any one of claims 1 to 5, wherein a liquid discharge port is provided in a center of the lower cover.
7. The cleaning method of a semiconductor wafer cleaning apparatus according to claim 6, comprising the steps of:
s1: confirming the specification of the silicon wafer to be cleaned;
S2: adjusting the flow speed and the rotating speed of the rotating nozzle component;
S3: adjusting the rotating speed of the central turntable;
s4: placing a silicon wafer to be cleaned to a central turntable;
S5: at least three groups of positioning parts shrink, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable;
s6: the fixing component adsorbs the silicon wafer;
s7: the central turntable is moved to a cleaning position;
s8, at least three groups of positioning parts move outwards, and the cushion blocks drive the positioning blocks to be far away from the central turntable;
S9: starting the cleaning device, driving the spray rotation by the air nozzle, and spraying cleaning liquid by the nozzle; simultaneously, the central turntable starts to rotate;
s10: after the nozzle sprays cleaning liquid for 80-120s, pure water is switched for cleaning;
s11: after spraying pure water for 25-60s, the central turntable stops rotating, and the air tap and the nozzle stop running;
s12: resetting the central turntable, stopping adsorbing the wafer, and removing the cleaned silicon wafer;
S13: placing a silicon wafer to be cleaned to a central turntable;
S14: repeating the steps S5-S12.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103182392A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN103506339A (en) * | 2012-06-28 | 2014-01-15 | 盛美半导体设备（上海）有限公司 | Device and method for cleaning reverse side of wafer |
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| JP7556328B2 (en) * | 2021-05-21 | 2024-09-26 | 株式会社Sumco | Semiconductor wafer cleaning device, semiconductor wafer cleaning method, and silicon wafer manufacturing method |
| CN218101191U (en) * | 2022-08-22 | 2022-12-20 | 重庆康佳光电技术研究院有限公司 | Wafer cleaning device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103182392A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN103506339A (en) * | 2012-06-28 | 2014-01-15 | 盛美半导体设备（上海）有限公司 | Device and method for cleaning reverse side of wafer |
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